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Thinox
Polysilicon
Metal1
Contact cut
Implant
Buried contact
Stick Encoding Layer Mask Layout Encoding
P-Diffusion
Metl2
VIA
Vdd or GND
CONTACT
For reference : an nMOS Inverter coloured stick
diagram
Vdd = 5V
Vout
Vin
CMOS Inverter coloured stick diagram
Stick diagram -> CMOS transistor circuit
Vdd = 5V Vdd = 5V
pMOS
Vin Vout Vin Vout
nMOS
Lambda (λ)-based design rules
Metal 1
n- p-
diffusion diffusion 3λ
2λ
3λ3λ
Minimum distance rules between device layers,
2λ 3λ
e.g.,
• polysilicon metal Metal 2
2λ • metal metal
4λ
• diffusion diffusion 2and
λ
2λ • minimum layer overlaps 4λ
arePolysilicon
used during layout
4λ
nMOS transistor mask representation
gate polysilicon
source
drain
metal
Contact holes
diffusion (active
region)
Contact Cuts
Three possible approaches –
1. Poly to Metal
2. Metal to Diffusion
3. Buried contact (poly to diff) or butting contact
(poly to diff using metal)
Layout Design rules & Lambda ()
2
3
6
6
2
2
All device mask dimensions are based on multiples of , e.g., polysilicon
minimum width = 2. Minimum metal to metal spacing = 3
Layout Design rules & Lambda ()
CMOS Layout
N Well
P diff
Contacts
Poly Metal
N diff
P Substrate
Layout Design rules & Lambda
()
Width of pMOS
should be twice the
width of nMOS
Vout
Vin
Two-way selector with enable
X
off
on
A off
on
E
Y off
on
A’
E=0
A=0|1
Static CMOS NAND gate
Static CMOS NOR gate
Static CMOS Design Example Layout
Layout 2 (Different layout style to previous but same function being
implemented)
Complex logic gates layout
Ex—F=AB+E+CD
Eulerpaths
Circuit to graph (convert)
1) Vertices are source/Drain connections
2) Edges are transistors
Metal Layer
Contacts
Poly
N Diffusion