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MJL21193 D PDF
MJL21193 D PDF
MJL21194(NPN)
PNP NPN
MAXIMUM RATINGS COLLECTOR 2, 4 COLLECTOR 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc
1 1
Collector−Base Voltage VCBO 400 Vdc BASE BASE
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc EMITTER 3 EMITTER 3
Collector Current − Continuous IC 16 Adc
Collector Current − Peak (Note 1) ICM 30 Adc MARKING DIAGRAM
Base Current − Continuous IB 5 Adc
Total Power Dissipation @ TC = 25_C PD 200 W
Derate above 25_C 1.43 W/_C
Operating and Storage Junction TJ, Tstg −65 to _C MJL2119x
Temperature Range + 150 AYYWWG
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum 3
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the TO−264 1 3
Recommended Operating Conditions may affect device reliability. CASE 340G BASE EMITTER
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% STYLE 2 2 COLLECTOR
THERMAL CHARACTERISTICS x = 3 or 4
Characteristic Symbol Max Unit A = Assembly Location
YY = Year
Thermal Resistance, Junction−to−Case RqJC 0.7 _C/W
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please †For information on tape and reel specifications,
download the ON Semiconductor Soldering and Mounting Techniques including part orientation and tape sizes, please
Reference Manual, SOLDERRM/D. refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive) 4.0 − −
(VCE = 80 Vdc, t = 1 s (non−repetitive) 2.25 − −
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 8 Adc, VCE = 5 Vdc) 25 − 75
(IC = 16 Adc, IB = 5 Adc) 8 − −
Base−Emitter On Voltage VBE(on) − − 2.2 Vdc
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.8 Adc) − − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − − 4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD %
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched − 0.8 −
(Matched pair hFE = 50 @ 5 A/5 V) hFE
matched − 0.08 −
Current Gain Bandwidth Product fT 4 − − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance Cob − − 500 pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
6.5 8.0
VCE = 10 V
6.0 7.0
10 V
5.5 6.0
5V
5.0
5.0 VCE = 5 V
4.0
4.5
3.0
4.0 2.0
3.5 TJ = 25°C TJ = 25°C
1.0
ftest = 1 MHz ftest = 1 MHz
3.0 0
f,
f,
Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product
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MJL21193 (PNP), MJL21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21193 NPN MJL21194
1000 1000
TJ = 100°C
hFE , DC CURRENT GAIN
25°C 25°C
100 100
-25°C
-25°C
VCE = 20 V VCE = 20 V
10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)
TJ = 100°C
hFE , DC CURRENT GAIN
TJ = 100°C
25°C 25°C
100 100
-25°C -25°C
VCE = 5 V VCE = 20 V
10 10
0.1 1.0 10 100 0.1 1.0 10 100
IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)
1.5 A IB = 2 A
IB = 2 A 30
25
I C, COLLECTOR CURRENT (A)
1.5 A
25
20 1A 1A
20
15
0.5 A 15 0.5 A
10
10
5.0 5.0
TJ = 25°C TJ = 25°C
0 0
0 5.0 10 15 20 25 0 5.0 10 15 20 25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
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MJL21193 (PNP), MJL21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21193 NPN MJL21194
3.0 1.4
1.2 TJ = 25°C
TJ = 25°C
SATURATION VOLTAGE (VOLTS)
1.5 0.6
0.5 0.2
VCE(sat) VCE(sat)
0 0
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C TJ = 25°C
VCE = 20 V (SOLID)
1.0 1.0 VCE = 5 V (DASHED)
VCE = 20 V (SOLID) VCE = 5 V (DASHED)
0.1 0.1
0.1 1.0 10 100 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage
100
1 SEC
a transistor; average junction temperature and secondary
10 breakdown. Safe operating area curves indicate IC − VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
1.0 The data of Figure 13 is based on TJ(pk) = 150°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
0.1 down.
1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
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MJL21193 (PNP), MJL21194 (NPN)
10000 10000
TC = 25°C
Cib TC = 25°C
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000 1000
Cob
Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
DISTORTION (%)
1.0
0.9
0.8
HD
0.7
0.6
10 100 1000 10000 100000
FREQUENCY (Hz)
+50 V
AUDIO PRECISION
MODEL ONE PLUS SOURCE 50 W
TOTAL HARMONIC AMPLIFIER DUT
DISTORTION
ANALYZER
0.5 W
0.5 W 8.0 W
DUT
-50 V
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MJL21193 (PNP), MJL21194 (NPN)
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q −T− NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.25 (0.010) M T B M ANSI Y14.5M, 1982.
−B− C 2. CONTROLLING DIMENSION: MILLIMETER.
E MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U A 28.0 29.0 1.102 1.142
N B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
A E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
L G 5.45 BSC 0.215 BSC
R 1 2 3
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
P L 11.2 REF 0.411 REF
K N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
W U 6.3 REF 0.248 REF
F 2 PL J W 2.8 3.2 0.110 0.125
G H STYLE 2:
D 3 PL PIN 1. BASE
2. COLLECTOR
0.25 (0.010) M T B S 3. EMITTER
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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