VIDYA MANDIR

PUBLIC SCHOOL

TOPIC : DEFECTS
SUBMITTED TO: Mrs. YOGITA
SUBMITTED BY: VIPLAY
CHAUDHARY
CLASS : XII – S5
ROLL NO. :
 INTRODUCTION
Any departure from perfectly ordered arrangement of
constituent particles in crystal is called imperfection or
defect.
Crystalline solids possess long range order, in the
arrangement of their constituent particles, yet crystals are
not perfect. This is because solid contains large no. of
crystals and some of these may not have a regular
arrangement. Defects may also arise due to heat
absorbed by crystals in surrounding and the presence of
impurities.
Broadly there are two types of defects, namely line defect
and point defect.
Line defect exists when there is a deviation from ideal
arrangement exists in the entire row.
Point defect exists when there is a deviation from ideal
arrangement around a point or an atom.
Point defect may be classified in the following types:
1. Stoichiometric Defects
2. Non-stoichiometric Defects
3. Impurity defect
 Stoichiometric
Defect
The compounds in which the number of +ve and -ve ions is
exactly in the ratios indicated by their chemical formulae are
called stoichiometric compounds. The defects are such that
they do not disturb stoichiometry (the ratio of number of
positive and negative ions) of the compounds. They are
called stoichiometric defects. They are known as
thermodynamics defects also.

They are of four types

1) Schottky defects.
2) Frenkel defects.
3) Vacancy defects.
4) Interstitial defects.
Types of Stoichiometric Defects
Schottky Defects
A Schottky defects a type of point defect in crystal
lattice named after Walter H Shcottky. In non-
ionic crystals it means a lattice vacancy defect.
In ionic crystal, the defect forms when oppositely
charged ions leave their lattice sites so that
electrical neutrality as well as stoichiometry is
maintained this is called a schottky defect.

It is vacancy defect (due to missing ions) and also

a stoichiometric defect, as the ratio of the number
of cations and anions. This is produced as the
result of the thermal incorporation of unoccupied
lattice sites from the exterior of the crystal. The
lattice undergoes thermal vibration and thermal
expansion when the temperature is raised above
OK. When it happens, the pair of vacancy is
incorporated in the crystal. A Schottky defect is
when two oppositely charged ions leave their
normal lattice positions forming 2 vacancies in the
lattice structure.
This type of defect is shown in compounds with:
 Highly ionic comp
 High co-ordination number
 Small difference in sizes of cations and anions
Examples NaCI, KCl, CsCI, KBr, AgCI, Etc.

Frankel Defects
The frenkel defect is shown by ionic solids. The
smaller ion(usually the cation) is displaced from
its lattice position to an interstitial site. It creates
a vacancy when defect at its original sites and an
interstitial defect as its new location.
A Frenkel defect is a point defect in a crystal
lattice. The defect forms when an atom or cation
leaves its place in the lattice, creating a vacancy,
and becomes interstitial by lodging in a nearby
location not usually occupied by an atom. Frenkel
defects occur due to thermal vibration and is
theorized that there will be no defects in a crystal
at 0 K. The phenomenon is named after the
physicist Yokov Frenkel.

It is shown in ionic solids with large size difference

between the anion and cation (with cation usually
smaller due to increased effective nuclear
charge). Some solid which display this defect are
ZnS, AgCI, AgBr, Agl (due to comparatively smaller
size of Zn2+ and Ag2+ ions).

Interstitial defect
This type of defect is caused due to the presence
of ions in the normally vacant interstitial sites in
the crystal.
When some constituent particles (atoms or molecules)
occupy an interstitial site, the crystal is set to have interstitial
defect. This defect increases the density of the substance.

It is a point defect produced-when an atom is placed into the

crystal at a site that is normally not a lattice point. It is also
called an "alien" atom in one of the interstitial in a structure.

Vacancy defect
Crystal inherently possesses imperfections, sometimes
referred to as crystalline defects. A defect in which an atom,
such as silicon, is missing from one of the lattice sites is
known as a vacancy defect. When some of the lattice sites
are vacant, the crystal is said to have vacancy defect. This
generally arises due to absorption of heat from the
surroundings.
This results in decrease of den & the substance. This defect
can also be moped when a substance is heated.

Non-stoichiometric Defects
Non-stoichiometric compounds are chemical compounds
with an elemental composition that cannot be represented
by a ratio of well-defined natural numbers, and therefore
violate the law of definite proportions. Often they are solids
that contain crystallographic point defect, such as interstitial
atoms and vacancies, which result in excess or deficiency of
an element, respectively. Since a solids are overall electrically
neutral, the defect in an ionic compound is compensated by a
change in the charge other atoms in the solid, either by
changing their oxidation state, or by replacing them with the
atoms of different element with a different charge.
1. Metal excess defects due to anion vacancies: A
compound may have excess metal ion if a negative ion is
absent from its lattice site leaving a whole which is
occupied by electron to maintain neutrality.

The holes that are occupied by electrons are called F

centers (or color centers) and are responsible for the
color of the compound in many interesting properties.

2. Metal excess defects due to interstitial cations:

Metal excess may also be caused by an extra cations
(positive ion) present in an interstitial site. Electrical
neutrality is maintained by presence of an electron in
another interstitial site.
The non-stoichiometric compounds ay have metal deficiency
due to the absence of a metal from its lattice site. The charge
is balanced by adjacent ion having higher positive charge.
These types of defects are generally shown by compounds of
transition elements.

Impurity defects
These defects arise when foreign atoms are present at the
lattice site (in place of host atoms) or at the vacant interstitial
sites. In the former case, we get substitutional solid solution
Ile in the latter case, we get interstitial solid solution. The
formation of the former depends upon the electronic
structure of the impurity while that of the latter on the size
of impurity.
The process of adding impurities to a crystalline substance so
as to change its properties is called doping.
 1. Introducing impurity defect in ionic solids:
In case of ionic solid the impurities are introduced by
adding impurities of ions. If the impurity ions are in a
different valance state from that of the host ion,
vacancies are created for e.g. doping of NaCl with Si2+
ions.

2. Introducing impurity defect in co vale solid :

The impurities added may be electron rich or electron
deficient. The defect does introduce is called electronic
defect.
Each of them describe below:

a) Electron rich impurities:

Silicon and germanium belong to group 14 of the
periodic table and have 4 valance electrons each. In
their crystals each atom forms 4 covalent bonds with its
neighbor atoms. When doped with group 15 elements
like P or As, which contains 5 valance electrons, they occupy
some of the lattice sites in silicon or germanium crystal.
These delocalized electrons increase the conductivity of
doped silicon (or germanium). Here the increase in
conductivity is due to negatively charge electron hence
silicon doped with electron rich impurity is called n-type
semi-conductor.

b) Electron deficient impurities.

Silicon or germanium can also be doped with a group 13
element like B, Al or Ga which contains only three
valance electrons. The place ere 4th valance electron is
missing is cane electron hole or electron vacancy. An
electron from a neighboring atom and fill the electron
hole, but in doing so it would leave an electron hole at
its original position. If it happens, it would appear as if
the electron hole has moved in the opposite to that of
the electron that filled it. Under the influence of the
electric field, electron would move towards the
positively charged plate through electronic holes, but it
would appear as if electron holes are positively charged
and are moving towards negatively charged plate. These
types of semi-conductors are called p-type semi-
conductor.
 Bibliography
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