TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x-MOSIII) 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm © Low Drain-Source ON Resistance: Rpg (ON)=1.19 (Typ.) . ch Forward Transfer Admittance : |Yg.|=7.08 (Typ.) ¥ “3 f © Low Leakage Current : Ipgg: 3| sal | © Enhancement-Mode —: Vin=2.0~4.0V (Vpg=10V, Ip=1mA) 20 i MAXIMUM RATINGS (Ta = 25°C) 102822 3 CHARACTERISTIC sympot | Rarinc | UNIT Drain-Source Voliage Voss 300, Vv Drain-Gate Voltage (RGg=20k) | VaR 300) Vv Gate-Source Voltage Voss £30 Vv ; Be 1D 3 a Drain Current Pulse | _Ipp 24 A Drain Power Dissipation (Te=25°0) | Pp 35 | Ww ‘Single Pulse Avalanche Energy** | Bas. 799 | md Avalanche Current TAR 3 A Repetitive Avalanche Bneray* EAR 35 | md (Channel Temperature Teh 150 | -C [TOSHIBA _2-16F1B Storage Temperature Range Te | —55~150 [°C _| Weieht : 5.8¢ (Typ) THERMAL CHARACTERISTICS CHARACTERISTIC syMBoL |MAX.] UNIT [Thermal Resistance, Channel t ase Tinie) | 147 [OW [Thermal Resistance, Channel to Ambient | Rth (ch-a)| 41.6 ['C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=90V, Starting Teh=25°C, L=22.9mH, Rg=250, I4p=8A This transistor is an electrostatic sensitive device. Please handle with caution. sc1003 OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species persia ranger a et fon the Rap acre pods spechestons Ass, Pane Keep mind the prec and canon: ft oh he S8SRURsenondocor Relay Handbook © CBee HA RN Toray nkinperent of etalecual bapery Sarat ght of te a Baie ach hay ses ors 1 te Ro Neaeew Saned i subject to change without nonce oe © He'intormaton conttved he 1998-11-12 15TOSHIBA 2SK2847 ELECTRICAL CHARACTERISTICS (Ta= 25°C) CHARACTERISTIC ‘SYMBOL ‘rest conprrion — | aan. | ryp. wax.) unrr] (Gate Leakage Current Tass _|[Vag==a0V, Vpg=0v = [= [ei ek Gate-Source Breaklown Voltage Vopr)ass |Ie=+10A, Vps=0V t%0| —| —| v Drain Cut-off Current Tpss__|Vos=720V, Vqg=0V = [=o [a Drain-Source Breakdown Voltage Vee) pss |1D=10mA, Vas=0V so} -|- 1% Gate Threshold Voliage Vin [Vos=i0V, 7 20, — | ao| Vv Drain-Source ON Resistance | RDS (ON) _|Vas=10V, 1 = aap ao Forward Transfer Admittance | |¥gl | Vpg=15V, Ip=4A 30] 70] — | 8 Taput Capacitance Ciss ly, «= 95V, Voguov = [2040 — [Reverse Transfer Capacitance Crss paced > Vas=0v, = 45[ — | pF (Output Capacitance Coss | = [90 — Ip=4A — | 2a] — Rise Time ty tov Vos ov Your ‘Turn-on Time | — ton Roa | — | 6] — stching Ts 4.10 = ns Switching Time lpau1 Time tt — | 2%] — VDD - Vin : te, e<5ns, 54000 Turn-off Time | — torr Duty =1%, ty =10j8 — | | - [Total Gate Charge Q — | ss] — (Gate-Source Plus Gate-Drain) s Vpp#400V, Vgg=10V, Gate-Source Charge Gs |Ip=8a =| #[ =] *° Gate-Drain (“Miller”) Charge Qa — | 26] — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL TEST CONDITION Continuous Drain Reverse _ —{_T sla Pulse Drain Reverse Ourrent | IDRP. = = [=| sya Diode Forward Voltage Vpsr _|IpR=8A, Vas=0V = |= ts] v Reverse Recovery Time tr |IpR=8A, Voi = [i650 | — [as [Reverse Recovery Charge Qe [lpr /dt=100A / ys =| af — | MARKING. [TosHiBA 2% Lot Number K2847~}—-TYPE fe [Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) T998-11-12_2/5TOSHIBA DRAIN CURRENT Ip Ne "PonWARD TRAGER ADMITTANCE a “COMMON enawe t DRAINSOURCE VOLTAGE Vpg (V) 1p - Vos se . 1p = Vos Baye = Sosttor 16 8 i to 1 Mh Hy GATR-SOURCE VOLTAGE Vos W) ‘counron SOURCE ox 05 ic sl — 1 T 7g DRAIN CURRENT Ip «) DRADNSOURCE VOLTAGE Vp DRAIN CURRENT Ip «> DRAIN SOURCE OW RESISTANCE 2SK2847 1p - Vos ‘COMMON esac aia) Tap 00 DRAIN-SOURCE VOLTAGE Vps (W) Vos ~ Vas Conran ease a. a GATE-SOURCE VOLTAGE Ves () Rps(on) ~ Ip ‘COMHON source ol “Sr ae 1 3 70 DRAIN CURRENT Ip (A) 1998-11-12 3/5TOSHIBA 2SK2847 ps ox) ~ Te Ipr - Vos coos TTI ; GauagN 5 2 use & - . 2. 5 ges 2 5 BCH i 5 g a t i o Afas=0. =a 0 a ‘CASE TEMPERATURE. Te ¢) DRAINSOURCE VOLTAGE. Vos CAPACITANCE ~ Vos Vth — Te 10109 > g comnron a s Noseiow = 1009 5 3 5 soo Eo i =f comion cre soo] SOURCE e | sol fhe on g eae 3 i ‘hr —oaos 18 6 10 a0 60 100 “om o BOO DRAINSOURCE VOLTAGE. Vos «) CASE TEMPERATURE Te C0) pp ot DYNAMIC INPUT/ OUTPUT > re CHARACTERISTICS z = € & g 8 : 4 vpp=100v s i : fi i 3 40 : z i q i a 5 oa Ta Fo a a a (CASE TEMPERATURE. Te) TOTAL GATE CHARGE. Qy (50) 1998-11-12 4/5TOSHIBA sol) MAX (PULSE) rt oy 8 t NORMALIZED TRANSIENT THERMAL TMPEDANCE nunca Rants, “oz 1007 SAFE OPERATING AREA ip MAX. conTINUOUS) Te=25¢ SINGLE NONREPETITIVE PULSE Ten 25% curves must be dated 7% esa 1000 DRAINSOURCE VOLTAGE Vps W) wa PULSE WIDTH ty) Ti00 rth — 10m 2SK2847 tw. onl] Me os 000 Eas - Tech 5 a on “enh RB conan umenen ta svoss "A resrcmcur wave TOR Peak IAR=8A, RG=250 bors. 1998-11-12 5/5