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Introduction
Voltage reference is a pivotal building block in mixed-
signal and radio-frequency systems. For example, a
generic mixed-signal system, as shown in Fig. 1, has more Fig. 2: Concept of bandgap voltage reference.
than one voltage reference due to different voltage
reference requirements and also to avoid crosstalk through The above-mentioned concept can be implemented as
a single reference circuit. In such a system, a voltage shown in Fig. 3 [ 5 ] by using parasitic vertical BJTs.
reference is needed for the power-management block, Current mirrors formed by M1, M2 and M3 enforce
which includes many on-chip DC-DC power converters to branch currents equal to a proportional-to-absolute-
provide regulated power. Some other voltage references temperature (PTAT) I, which is generated by Q1, 4 2 and
are utilized in ADCs and DACs, which need high-accuracy RI when V, = V, is enforced by a voltage-clamping circuit
reference voltages to provide high-resolution high-speed composed of M4 and M5. Thus, V , Fis given by
data conversions even in low supply-voltage conditions. VREF = VEB3 + (R2 /RI )In(@ VT (1)
The achieved VMFis around 1.205V, which is the value of
energy bandgap of silicon. A VMF with low temperature
coefficient (tempco) can be easily obtained by optimizing
temperature-independent circuit parameters R21RIand N.
T I current-
mirrors
VR~~F
-0
Voltage -
Fig. 1: A generic mixed-signal system. clamping
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error. However, there are many sources of error in the In the figure, N = 8 is chosen and all BJTs are placed
voltage reference such as error current from the current closely. N, in fact, can be 24, 48 or even 80 as these
mirrors, error voltage from the clamping circuit, as well as integers can be used to obtain common-centroid structures.
device mismatches of 41-42 and R I - R ~ Undoubtedly,
. However, a large value of N is not preferred as the
there are many well-developed circuits and layout separation of devices increases, and this will introduce
techniques to minimize the errors. However, low supply more errors. Moreover, as shown in (l), there is no
voltages limit the available methodologies and cause significant increase on the ln(w fimction when N increases.
severe design problems.
For the resistor layout, common-centroid layout should be
Moreover, typical bandgap references have non-zero also used to obtain better matching. Fig. 4(b) shows two
tempco of typically around 25-50ppmPC [l]. This is, no resistors with equal values in two layout arrangements.
doubt, an error of VmF. This error is not significant in the The resistor layout should be arranged in a square-like
past 5-V and 10-V systems, but is a fatal error in current structure instead of a thin and long structure. Although the
1.8-V or even future sub-1-V systems. Solutions have been structure in Fig. 4(b) provides a very stable resistor ratio
proposed but are less useful in low-voltage conditions. including the effect of contact resistances, each resistor
must be sufficiently long such that the contact resistances
In regards to the above-mentioned low-voltage design are negligible and cause less influence. Moreover,
trends and problems, many novel structures of bandgap polysilicon is a better material than diffision to implement
reference have been proposed and well-proven by resistors since the minimum separation is shorter and that
experimental results. Thereby, in this paper, the designs of provides a better matching.
low-voltage and low-tempco bandgap voltage reference
are reviewed and studied. Discussions will not only be on The tempco of V& is also affected by the materials used
the circuit structures, but some design considerations and to implement the resistors. It is known that the finite
design problems due to technology limitations will also be tempco of VREF is due to the non-linear behavior of VBEat
discussed as well. Lastly, a CMOS voltage reference is different temperatures. Tsividis has found that the VBE can
introduced. be expressed by [81
A. Design Issues on BJT and Resistor In fact, the current I in Fig. 3 is not a pure PTAT current.
Laser trimming can be used to optimize the performance of When a material with a low tempco is used, ( 7 - p) in (2)
bandgap voltage references, but it is a costly procedure. As becomes smaller and this results in a smaller non-linear
a result, layouts on both BJTs and resistors should be well voltage. Therefore, polysilicon is a better material than
planned and designed so that consistent performance can diffusion since its tempco is low [6]. An even better material
be maintained with minimum need of trimming in mass is high-resistive polysilicon (lightly-doped polysilicon),
productions. Better matching can be achieved by a since it has a negative tempco [6]. Fig. 5 shows different
common-centroid layout [6], [7]. In Fig. 4(a), there shows YmFT plots of different tempcos of resistors. The tradeoff
two matched BJTs in a ratio of 1:8 as shown. on low-tempco resistors is higher current level at high
temperatures, and that implies more power consumption.
(a) (b)
Fig. 4: Layouts of (a) two BJTs (b) two resistors. Fig. 5: Reference voltage using different resistor materials.
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B. Current Mirror and VoItage Cramping method [7]. The estimation of the required A should be
The current mirror and voltage-clamping circuit formed by done at the lowest operational temperature such that
M1-M5 in Fig. 3 are not effective at different supply VTln(N)is the smallest. A correct concept on the design of
voltages. Although long channel lengths are always used to error amplifier is that A can be low in low-voltage design.
reduce the channel-modulation effect, there are still When both V&FR and VoFFs are significant, errors at VMF
problems. When ID/ # ZDZ occurs due to vDs/ + VDSZ, VGs z cannot be reduced by using a high-gain error amplifier.
VCS,causes an error in the PTAT loop to generate an error- Thus, the main consideration in error-amplifier design is
contained VMF. Cascode current mirror is a good choice simplicity rather than high voltage gain.
for reducing error, but a higher supply voltage is needed
and therefore it cannot be used in low-voltage design. One The design of the error-amplifier-based current mirror
solution widely used recently is the error-amplifier-based involves stability issues since there are more than one high
current mirror. Fig. 6 shows a bandgap circuit using this impedance nodes at nodes A, B and C in Fig. 6. Stability
method. can be achieved by inserting a compensation capacitor.
There are, in fact, three possibilities. One possibility is to
add the capacitor between VDDand node C to achieve
dominant-pole compensation. The required value is large,
and supply noise will couple to the reference circuit easily.
Another method is to insert the capacitor between node C
and ground. However, this method has a problem on line
transient response. The change of VC cannot respond
II quickly at rapid changes of VDD.As a result, VMFcannot
. VDD .
settle immediately. The best approach is to add the
capacitor between nodes A and C to compensate by Miller
effect with a small compensation capacitor.
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Fig. 8 shows an example bandgap voltage reference, which It is noted that the temperature dependence of the
is designed based on some of the previous suggestions. reference voltage can be cancelled by an appropriate R2IR1
ratio and N. A resistor ratio of R31R2,which is less than
one, is used to scale down the bandgap voltage reference
to be less than 1.205V. Therefore, the magnitude of VmF
can be adjusted for different applications. In [9], VmF is
set to 515mV, which is a good value to achieve VDs, =
VDs2 = VDsj for good current matching at different
temperatures. Moreover, the error amplifier shown in Fig.
6 with biasing current from the bandgap core is used to
minimize VoFFs. VoFFR can be reduced by a small g,,, ratio
of MA3 to MA1 and a large transistor size of MA1 and
MA2 [5].
Fig. 8: Micrograph of a bandgap voltage reference.
B. A Sub-1 - V CMOS Bandgap Voltage Reference without
11. Advanced Bandgap Voltage References Low Threshold- Voltage Devices by Leung et al. [101
with Sub-1-V Supply Operation The bandgap reference by Banba et al. has been
The 1.205-V bandgap reference voltage is a hindrance to implemented in a technology having native NMOSTs
developing a reference voltage with a sub-1-V supply. (non-standard devices in CMOS technology) to implement
Therefore, Banba et al. [9] and Leung et al. [lo] have an NMOS input stage of the error amplifier. The threshold
developed bandgap references with sub-1-V operations. voltage of NMOSTs should be always much lower than
The concept is basically a current-mode method to scale one VEBin the full operational temperature. Thus, one VEB,
down the bandgap reference voltage by a factor defined by even at the highest operational temperature (lowest VEB),is
a resistor ratio. therefore sufficiently high to turn on the input stage of the
error amplifier for proper operation as shown in Fig. 1O(a)
A. A CMOS Bandgap Reference with Sub-1-V Operation (i.e. VEB> Vr, + 2vDS(#,t)).When a PMOS input stage is
Proposed by Banba et al. [9]
used, a low supply voltage cannot be achieved easily since
Fig. 9 shows the circuit proposed by Banba [9]. The the minimum supply voltage, as shown in Fig. loo>), is
reference voltage is formed by two currents I1 and 12.For given by VDD(,,,~~) = V'B + ~ V T H+P~~V S O ( TheS ~ . above
I*,it is a PTAT current formed by Q1, 4 2 and RI as given implies a low I VmpI is needed.
by I] = V&I(N)IRI, while IZ is a current due to V'BZ and R2
as given by Iz = VEB21Rz. Thus, VmF is given by
VREF =(I1 + J Z ) %
v, =v, =( R2B
R 2 A + R2B
).VEB2 (4)
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given by
-
As a result, the current Z2 is given by Z, = (VEB~ VB)/R,. In
addition, the PTAT loop generates a current given by Zl =
V+n(N)/R,. Therefore, the drain currents of M1, M 2 and
M3 are the sum of Zl and Z2. With a current source
depending on VB, VmF is given by
vREF =1(' +2
' + vB l R 2 )' R3
(7)
which is a scalable bandgap reference voltage.
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A. A Curvature-CompensatedBandgap Voltage Reference given, instead, to M4 and VmF. VmF can be set to about
Proposed by Malcovati et al. [151 one VEBin order to match the VDsof M4 with MI-M3.
The circuit proposed by Malcovati et al. is shown in Fig.
12. It can be shown from (2) that different VBEcan be B. A Curvature-Corrected Bandgap Reference Based on
obtained by different temperature-dependent collector Temperature-Dependent Resistor Ratio Proposed by
currents. In this circuit, 42 is biased by a PTAT current: Lewis et al. [161, Audy [ 171 and Leung et al. [ 181
vEB2 = vG )+
T
(Tr )- vG (Tr 11’ (7-
kT
‘)g ln( 5) Another method is to implement a bandgap circuit that has
a temperature-dependent resistor ratio. This idea can be
implemented by the circuit shown in Fig. 13. Both RI and
(8) R2 are made of the same material, while R3 is made of
while 4 3 is biased by a temperature-independent current: high-resistive polysilicon, which has a negative tempco.
Therefore, VmF is given by
(9)
A non-linear current INL,which is the current flowing
through R4 is generated and is given by Im = (VEBZ-
VEB~)& = -V&(TAT)&
T-dependent resistor ratio t
Since the non-linear temperature-dependentvoltage in VEB
(IlnT)can be expressed into a s u m of high-order T terms,
high-order temperature-dependence cancellation can be
achieved depending on the relative temperature-
coefficients of RI and R3. In [18], a fourth-order curvature
correction has been reported. It is noted here that & is
made of the same material of RI and Rz, and is set to Rt +
R3 at room temperature to achieve good matching of VDSI
and V D S ~ .
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IV.A CMOS Bandgap Design without Resistor device matching are both critical to achieve a good result.
In the previous sections, low-voltage and low-tempco Any variations on the threshold voltage and mobility will
methodologies in the state-of-the-art CMOS voltage lead to additional temperature errors on the reference
reference have been reviewed. It is well understood that voltage.
technology limitations on passive components may occur.
Large values of resistors are problematic in IC technologies -
V. Alternative Solution A CMOS Voltage Reference
as the resistors require large chip area that increases Although bandgap voltage reference shows very good
production cost. Moreover, coupling noise causes the performance, it is not the only voltage reference available
reference voltage to become noisy, and this affects some in CMOS technologies. Thus, a voltage reference based on
noise-sensitive analog circuits. Therefore, a CMOS MOS characteristics is introduced in this section.
bandgap voltage reference without the resistor was
developed by Buck et al. [ 191 and shown below. A voltage reference can be implemented by using MOS
transistors only. This type of voltage reference relies on
VDD the temperature dependence of VTH.The threshold voltage
is approximated as a linear function of temperature, and
the temperature dependences of NMOS and PMOS
transistors are different in different technologies, as
illustrated in Fig. 16.
The circuit makes use of voltage-to-current transducer to It is very difficult to extract VTHby simple circuits. Instead,
eliminate the need of the resistors. From Fig. 14, when I, VGsis used in the design of [21] and [22]. Fig. 17 shows
is a PTAT current, there is a AVEB formed by the the simple circuit to form a temperature-insensitive VmF
differently biased Q1 and 4 2 . Therefore, based on weighted differences of VGsof an NMOST and a
PMOST.
(12)
where IT = I, + 12. It is noted that this AVEB is a PTAT
voltage. With the use of the voltage-to-current transducer,
the re-generated voltage is given by f i A V B E . This can
be explained by
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The reference voltage is given by pp.388-393, Dec. 1974.
P. Gray, P.J. Hurst, S.H.Lewis and R.G. Meyer, Analysis
and Design of Analog Integrated Circuits, 4th Edition,
Wiley, 2001.
When RI and R2 are large, the current in these two resistors Hasting, The Art of Analog Layout. Englewood Cliffs, NJ:
is negligible. The temperature dependence of the reference Prentice-Hall, 2001.
voltage can be obtained by taking differentiation to the D. Johns and K. Martin, Analog Integrated Circuit Design,
Wiley 1997.
function of I‘mF with respect to T. It is found that the
Y.P. Tsividis, “Accurate Analysis of Temperature Effects in
circuit can be optimized by a resistor ratio of R1IR2 and a IcVBE Characteristics with Application to Bandgap
transistor-size ratio of the M O S T to PMOST. The Reference Sources,” IEEE Journal of Solid-state Circuits,
reported tempco can be as low as 24ppmPC, which is close vol. SC-15, pp.1076-1084, Dec. 1980.
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and K. Sakui, “A CMOS Bandgap Reference Circuit with
Moreover, the supply dependence is low. Since, as shown Sub-1-V Operation,” IEEE Journal of Solid-state Circuits,
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simultaneously when IB increases/decreases due to the [lo] K.N. L&g and P.K.T. Mok, “A Sub-1-V 1 5 - p p d C
change of the supply voltage, the effect is partially CMOS Bandgap Voltage Reference without Requiring Low
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Circuits, vo1.37, pp.526-530, Apr. 2002.
[111 Y. Jiang and E.K.F. Lee, “Design of Low-Voltage Bandgap
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Reference Using Transimpedance Amplifier,” IEEE
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