TOSHIBA 015AZ2.0~015AZ12 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015AZ2.0~015AZ12 CONSTANT VOLTAGE REGULATION APPLICATIONS Unit in mm Small Package 55 © Nominal voltage tolerance about +2.5% x (2.0v~12V) 3 _t 8 | g Ei MAXIMUM RATINGS (Ta = 25°C) 5 | CHARACTERISTIC syMBoL | RATING | uNrr |] 03 ona Fos,p $05) Power Dissipation Pe 200 | mw Junction Temperature Tj 125 °C Shy Storage Temperature Range Tag | —85~125 | “C * Mounted on a glass epoxy circuit board of 20x 20mm, Pad dimension of 4% 4mm, ESC JEDEC = ELECTRICAL CHARACTERISTICS BIAS = (see Page 2~3) TOSHIBA _LiGIA Weight : 14mg Marking Example 1 : 015A22.4-x Example 2 : 015AZ12-x PIN ASSIGNMENT (TOP VIEW) cop sau RB tl Seka leg ae aeatahlse nae tere AST es Ban ld abe ge ea Ba adh eS ph dl ger cS oe ereor test's ering cy mo oe rw spk ol om node. No serait seedy, oan Set cinta a cilantro oar toluan Cotten antes ne MO NaNe He 1997-05-07 1/5TOSHIBA 015AZ2.0~015AZ12 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ZENER DYNAMIC] KNEE DYNAMIC vouradi IMPEDANCE | IMPEDANGE | CURRENT TYPE No. vw) [a | aM) y [zm] % [Irv] ve MIN. | MAX. | (mA) [wax, | (ma) [ ax, | (mA) Pax. | onsazg.o** |X| 185 | 2051 5 | yoo | 5 | 1000 | os | 120 | 05 Z| 195 | 2.15 onsaza.2** |X {205 | 2261 5 | yo | 5 | 1000 | 05 | 120 | 10 z | 216 | 2.38 osazza =| X{ 228} 2601 5 | so | 5 | 1000 | 05 | 120 | 10 Z| 240 | 2.60 orsaza7 | X{ 2501 2751 5 | yo | 5 | 1000 | os | 120 | 10 Z| 2.65 | 290 015A23.0 xX | 260 { 805 15 | 120 | 5 | 1000 | 05 | 50 | 10 z | 295 | 3.20 orsazss = |X} 8101 8351 5 | iso | 5 | 1000 | o5 | 20 | 10 z | 325 | 3.50 osazae =| *{ 840} 3651 5 | ys | 5 | 1000 | 05 | 10 | 10 Z| 355 | 3.80 osazgg «=| X{ 370} 3971 5 | a390 | 5 | 1000 | 05 | 10 | 10 z | _aa7 | 410 x | 4.00 | 4.23 owazas [y | 413 | 435] 5 | 130 | 5 | 1000 | 05 5 | 10 Z| 425 | 4.50 x [4a] 4.65 otsaza7 [Ty] 45a] 476] 5 | 120 | 5 | 1000 | os 5 | 10 Z| 466 | 4.90 x | 4.80 | 6.07 ousazs.1 [y | 497] 526] 5 | 7 | 5 | 1000 | 05 1] 4s Z| 614 | 5.40 x [5.30 | 5.03, osazse [fy | sas] ser] 5 | 40 | 5 | 900 | on 1 | 25 Z| 561 | 6.00 x | 580 | 620 o1saze2 [¥ [600] 639] 5 | 30 | 5 | 500 | 05 1 | 80 z [619 | 6.0 x | 640 | 6.80 osazes [y | 660] 702] 5 | 25 | 5 | 150 | 05 | 05 | 50 z | ss2 | 7.20 % : Test time : t=30ms 8 | Produet by order. 7997-05-07 215TOSHIBA 015AZ2.0~015AZ12 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ZENER DYNAMIC _]KNEE DYNAMIC] REVERSE VOLTAGE IMPEDANCE | IMPEDANCE | CURRENT TYPE No, * VW) Ty | 226) ag | 2K) gD pe man. | max. | mA) | max. | oma) | ax, | mW | ax. | x [7.00 [7.48 O1SAZ7.5 y | 723 | 7665] 5 os | 5s | 10 | os | os | 60 z | 746 | 7.90 [x |" 770 | 8.16 015A28.2 y | 796 | 843] 5 20 | 5 | 120 | 05 | o5 | 65 z {823 | 8.70 x | 8.50 | 9.00 015AZ9.1 y | 880] 030] 5 ws | 5 | 120 | 05 | 05 | 70 z {| 010 | 9.60 x | 940 | 9.98 O15AzZ10 y | 973 | 1026 | 5 1 | 5 | 120 | 05 | 05 | 80 z | 10.06 | 10.60 X | 10.40 | 10.98 o1sAzIL y [10.73 [11.26] 5 w | 5 | wo | 05 | 05 | 86 % | 11.06 | 11.60 x | 11.40 | 11.98 O15Az12 y [a173 [12.26] 5 w | 5 | 10 | 05 | 05 | 90 Z | 12.06 | 12.60 1997-05-07 3/5TOSHIBA DYNAMIC IMPEDANCE 72 «a> aenen connENT tz caAcITANCE 6) GP 100 1044 ou ly ~ Va Wy: 20-62) ENE ZENER VOLTAGE Vz «) Wy, - Vn Bier aa56 @e ZENER VOLTAGE Vz Gv I ZENER VOLTAGE Vz. W) » 015AZ2.0~015AZ12 I~ Vn Wa: 68-19) 100m = 5'62'9'10 149 a . 2 wn 2 zene VOLTAGE vz) tk uM 3 10 Eo : z rarest sa Ho ZENER CERRENT 1g (nA) a-Vn 5 3 Be ot » Be & 5 Ee eee 62 p 8 Po. 8 & ao ae t ssw w ZENER VOLTAGE Vz 7997-05-07 4/5TOSHIBA FORWARD CURRENT ty toa) Ip - ve ir oF as FORWARD VOLTAGE Yp () To POWER DISSIPATION P em W) 015AZ2.0~015AZ12 P-Te on . ae AMBIENT TEMPERATURE Ta CC) 1997-05-07 5/5