V i s h ay I n t e r t e c h n o l o g y, I n c .

AND TEC
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RF INDUCTOR
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RFLW 19
62-2012

Vishay Electro-Films Wire Bondable

RF Spiral Inductor
Inductors - Wire Bondable, Spiral for RF Circuits

Key Benefits
• Wire bond assembly
• Small size: 0.030 in. x 0.030 in. x 0.020 in. or 0.050 in. x 0.050 in. x 0.020 in.
• Low DCR, high Q
• Low parasitic capacitance, high SRF
• Equivalent circuit model
• S parameter files available for download
• Available with or without silicon nitride passivation
• Sample kits available

APPLICATIONS
• RF choking for DC biasing
• RF tuning circuits
• Lumped element filters

Resources
• Datasheet: RFLW 3N - http://www.vishay.com/doc?61057
• Datasheet: RFLW 5N - http://www.vishay.com/doc?61087
• For technical questions contact efi@vishay.com

One of the World’s Largest Manufacturers of

Discrete Semiconductors and Passive Components

PRODUCT SHEET 1/2 VMN-PT0227-1202

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Storage Temperature
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13 15 >
16 °C6 >6
upon request.
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Document
NoteESD: Number:
RFLW3N2000B
AEC-Q200-002,
RFLW3N1100B
61057 component
(3) 20
classification
11
For 5B
11
technical
20 (up to questions,
16 1.6
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1.2
contact: efi@vishay.com
1221 5.0 % max. 1.7
1.3 R/R 12
11
www.vishay.com
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14 % >>6
66
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Revision:
(4) 1000 Handling
through
21-Apr-11 h, +experimentation.
RFLW3N2000B 125 °C, 125 mW 20 To help designers
20 during
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NotesIncludingRFLW3N3000B
the added inductance and 30 resistance of 30 typical bond 2.5 wires at 250 MHz. 31 See equivalent 2.6 circuit section 13
below. 13
the Operating
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ESD: RFLW3N2000B
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without
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(1) CustomRFLW3N3000B
values available upon 30
request. See custom 30 design section 2.5 below. 31 2.6 13 13 >6
THE PRODUCTS
available.
Storage Note DESCRIBED
RFLW3N3000B
Temperature HEREIN AND
30 THIS DOCUMENT 30 ARE SUBJECT
2.5 TO SPECIFIC 31 DISCLAIMERS, - 55 toSET
2.6
+ 125FORTH AT www.vishay.com/doc?91000
13 13 °C >6
Notes
(2) Main Note
source of value tolerance is due to variation in wire bonds. See “test fixture” section below.
(4) Including the added inductance and resistance of typical bond wires at 250 MHz. See equivalent circuit section below.
(1) Stability,
Custom
Additional
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Maximum 1000
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(3) Maximum rated power of 125 mW at 70 °C, linearly de-rated to zero at 125 °C.
Revision: 21-Apr-11
Notes 1
RF CHARACTERISTICS
(1) Custom values available upon request. See custom - TYPICAL VALUES
This documentdesignissection
subject below.
to change without notice.
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PRODUCTS ELECTRICAL
Number:
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Document Number: 61057 - TYPICAL
Revision: 21-Apr-11 (nH) VALUES
For technical
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Revision: power
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Revision: 21-Apr-11 250 MHz HEREIN 1000 MHz IN-CIRCUIT 250 MHz 1
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47 49 3.3 48 16 9 3.8
Power Handling (3)
Revision 21-Apr-11

Max.
RFLW5N5200B
RFLW5N1800B 18 INDUCTANCE 19 1.0 19 125 16 Q 13 mW6
52 56 3.6 IN-CIRCUIT
53 17 (UNITLESS) 9 3.5
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PART NUMBER 47 49 3.3 INDUCTANCE 48 16 9 3.8
RFLW5N8000B
RFLW5N5200B 80 87 ()
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RFLW5N1200A 120
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Notes
RFLW5N1200A 52
120 56
156 3.6
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(3) Maximum rated power of 125 mW at 70 °C, linearly de-rated to zero at 125 °C.
(4) RFLW5N1200A
Including the added inductance 120 and resistance 156 of typical bond 7.7 wires at 250 MHz. 122See equivalent circuit 18 section below. 4 1.7
RFLW5N1500A 150 220 9.3 152 18 3 1.5
Document Number: 61087 For technical questions, contact: efi@vishay.com www.vishay.com
NoteRF CHARACTERISTICS
Revision: 21-Apr-11 - TYPICAL VALUES 1
PRODUCT SHEET Document
(4) Number:
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Revision:
THE 21-Apr-11
PRODUCTS
PART NUMBER DESCRIBED HEREIN (nH)
AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
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Number: 61087 18
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Revision: 21-Apr-11 47 49 3.3 48 16 9 3.8 1
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THE PRODUCTS DESCRIBED HEREIN 52 AND THIS DOCUMENT
56 ARE3.6SUBJECT TO SPECIFIC 53DISCLAIMERS, SET17 9 3.5
FORTH AT www.vishay.com/doc?91000