A1015

PNP General Purpose Transistors TO-92

P b Lead(Pb)-Free

1. EMITTER 1
2. COLLECTOR 2
3
3. BASE

MAXIMUM RATINGS* (TA=25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO -50 V

Collector-Base Voltage VCBO -50 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current Continuous IC -150 mA

Total Device Dissipation TA=25°C PD 0.4 W

Junction Temperature TJ +150 °C

Storage Temperature TSTG -55 to + 150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -50 V

Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 V(BR)CEO - -50 V

Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 V(BR)EBO - -5.0 V

Collector Cut-off Current, VCB = -50V, IE = 0 ICBO - -0.1 µA

Collector Cut-off Current, VCE = -50V, IB = 0 ICEO - -0.1 µA

Emitter Cut-off Current, VEB = -5.0V, IC = 0 IEBO - -0.1 µA

WEITRON 1/4 14-Feb-06

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 A1015
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE1 70 - 400 -
VCE =-6.0V, I C =-2.0mA

Collector-Emitter Saturation Voltage VCE(sat) - - -0.3 V

IC=-100mA, IB =-10mA
Base-Emitter Voltage
IC=-100mA, IB =-10mA VBE(sat) - - -1.1 V

TransitionFrequence
VCE = -10V, IC = -1mA, f = 30MHz fT 80 - - MHz

Collector Output Capacitance

Cob - 19 - pF
VCB = -10V, IE = 0, f = 1MHz
Noise Figure
NF - - 6 dB
VCE = -6V, I C = -0.1mA, Rg = 10kΩ, f = 1KMHz

CLASSIFICATION OF hFE1

Rank O Y GR
Range 70-140 120-240 200-400

WEITRON 2/4 14-Feb-06

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 A1015
Typical Characteristics

WEITRON 3/4 14-Feb-06

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 A1015

TO-92 Outline Dimensions unit:mm

TO-92
Dim
H

Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
E
L

4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D

WEITRON 4/4 14-Feb-06

http://www.weitron.com.tw