Instructor’s Resource Manual to accompany Electronic Devices and Circuit Theory Eighth Edition Containing Solutions to Problems in Text Solutions to Laboratory Experiments Test Item File Robert L. Boylestad Louis Nashelsky Franz J. Monssen Upper Saddle River, New Jersey Columbus, OhioCopyright © 2002 by Pearson Education, Inc., Upper Saddle River, New Jersey 07458. All rights reserved. Printed in the United States of America, This publication is protected by Copyright and permission should be obtained from the publisher prior to any prohibited reproduction, storage in a retrieval system, or transmission in any form or by any means, electronic, mechanical, photocopying, recording, or likewise. For information regarding permission(s), write to: Rights and Permissions Department. Instructors of classes using Boylestad & Nashelsky, Electronic Devices and Circuit Theory, Eighth Edition, may reproduce material from the instructor's resource manual for classroom use. 10987654321 ISBN 0-13-092212.9Contents Solutions to Problems in Text Solutions to Laboratory Experiments Prepared by Franz J. Monssen Test Item File Prepared by Rajiv Kapadia 205 299Chapter 1. (odd) ~ An "ideal" device or system is one that has the character- istics we would prefer to have when using a device or system in a practical application. Usually, however, technology only permits a close replica of the desired characteristics. The "ideal" characteristics provide an excellent basis for comparison with the actual device characteristics permitting an estimate of how well the device or system will perform. On occasion, the "ideal" device or system can be assumed to obtain a good estimate of the overall response of the design. When assuming an "ideal" device or system there is no regard for component or manufacturing tolerances or any variation from device to device of a particular lot. 3. The most important difference between the characteristics of a diode and a simple switch is that the switch, being mechanical, is capable of conducting current in either direction while the diode only allows charge to flow through the element in one direction(specifically the direction defined by the arrow of the symbol using conventional current flow) . 5. p = 50x103st-em (Si) , f= 1O7FS2-em (Cun) oe R=fh = (50x103s2-em) (3am) = \SOkse Clem?) ©) Re = (Sonio8srem) Clem? = 12.5 hem?) © Reh = (Sono Remon) = Sook. MO Raph = 110 r-em) OSS) th em a ¢ Bees" = Base Re, Ray = Sond: 1 7. Intrinsic material: an intrinsic semiconductor is one that has been refined to be as pure as physically possible. That is, one with the fewest possible number of impurities. Negative temperature coefficient: materials with negative temperature coefficients have decreasing resistance levels as the the temperature increases. Covalent bonding: covalent bonding is the sharing of electrons between neighboring atoms to form complete outermost shells and a more stable lattice structure. 4. We OV = (6C)(3V) = 18T. MN. GaP Gallium Phosphide Eg =224eV ZnS Zine Sulfide Ey = 3.67eV 13, A'donor atom has five electrehs in its outermost valence shell while an acceptor atom has only 3 electrons in the valence shell. 15. same basic appearance as Fig. 1.9 since Arsenic also has 5 valence electrons (pentavalent). 17. = 19: For forward bias, the positive potential is applied to the p-type material and the negative potential to the n-type material. 21. R= 1L600/4 = 1600/2 = 5800 (11 = 2 4or Vo= 0.6V) Te = Te +273 = 10042735 373 (3800%0.6¥) 33 ete ze 373 = 7 = 127x107) gze%= 4d (2) Fer veov, eos d amd TaTeC ie 25. For most applications the silicon diode is the device of choice due to its higher temperature capability. Ge typically has a working limit of about 85 degrees centigrade while Si can be used at temperatures approaching 200 degrees centigrade. Silicon diodes also have a higher current handling capability. Germanium diodes are the better device for some RF small signal applications, where the smaller threshold voltage may prove advantageous. 27. Vy 8o.cev, Ip=2ma Roc = VE = OO8V a 3282 Ip Zma Vpe -30y, Tye T= -O1Fl Ree = Ye = 3%, = 300M2 Th OYA Ds the reverse vorTase unoreacee, the reverse reacoTomee sintresase weeTly Camica the diode | Bt. Tp l0mA, Vp = O-76V Races YE = OEY = 7632 Ip Omi — vas BVA 2 0.74V-O76V 5 0.03V — 352. * Bia” TSmA- SmA” Tome = Rae >> A 33, Ip=imA, ra Tp=i5eQ, ras Zer¥ = > ras sma BS. rg= AVA = OBv-OTV L 8e8Y_ a3 5H current remains onitaat) = 2(2ERY) =2 (20m) =. Sz vs SSsz (#32) = v ZomYV © 1.7: vs. 28% (#32, ZomV — 113s Bra TB Se A IA (relatively close Te average valine atobse 34) om: 37, Uouig the besT apgroimatinn Toth conve begenet peor : _ ANA 2 0.8V-02V _ ow © tags BS aoa = Somat Se ot39. As the magnitude of the reverse-bias potential increases the capacitance drops rapidly from a level of about 5pF with no bias. For reverse-bias potentials in excess of l0V the capacitance levels off at about 1.5pF. YH. Log scale : Tqa=z2s%, Te = OSma Tas 00'C, Te = 600A the chamge 12 significadT 60mA:0.5nA = 1201 pee FST Te wont srerenar To CMA sTonTunly with 0.5m A & S%C) om Boulotinng the leved sows rere, AB. Ta 25°C! Page = SOOMNT Tw 100°C: Pace = Z00mWr Prag = Ve men = Vee Tee Pat, SOOM = ny.24mA Ne Iv Tra Pree. 2600W = S743 Ve OAV W24mA: SNASMA = AZ 1 S21 AS. (a) Vg s -25V: Cr & O.7SeF Vpe -lov: Cy 1.2596 ee a eee lncespsieecgl eka ev Benet 1OV! Gps LZSpF ‘ ae 3ee |=) = | '25e8 =34F| Ave voy — Iv ©) o.atet/y : O.033eF/v = 88:1 F611 WWereated sensiTivitiy mean Vp= OV 47. The transition capacitance is due to the depletion region acting like a dielectric in the reverse-bias region, ‘while the diffusion capacitance is determined by the rate of charge in- jection into the region just outside the depletion boundaries of a forward-biased device. Both capacitances are present in both the reverse and forward-bias directions, but the transition capacitance is the dominant effect for reverse-biased diodes and the diffusion capacitance is the dominant effect for forward- biased conditions. = OY ct M4 y= 1X atm Tye se teste ot = dns Come ts r2ts= Uns ts= Sus tye ath = one ‘Se = OG4eFV v = SY 2 osma tornAY2 Sl, 240.072 = DYZ— x 100% Vz (t-te) 0.012 = 8-75V.x100 yov CT,-25) Y) x 100% = TI% 68v) the 20V Zener is therefore = bBVauck Z4V measured fromthe 6.8V At Iz= olmA, Te 20.06%/T CSV=SEV) x 100% = HH (6-8V-3.6V) whe SV 2ener is therefore S4% fpthe disTanee becca B.0V and G.8V measured dyem-the 3.6V chara TerisTc. At Tz <0.mA, Te 2 0.025% /°C 5S. 24V Zener: O.zmA : ImA Oma : the STeeger the curve Chigh; dynamic vesisTamce. BT. Fig. 55 Cf) Te S13mA Fig. 55 (e) Ve 22:3 TTL A the disTance between aractoristic. er AT/Av) the less the 54. a. ims = 1 Ss, f= soon, From Fig hSSOM Lpesk men 1g Zac cman 2 gente omagy = 8 Lae omayy = 1.8 (ZOmA) = SomA b. lms = loooms, $= 10045, Fram Fig. bS5th) Teese one) 22.7 Tae tmady = 2tzomny= Smt Sena th, $2300; Fe100H, 4 Trek 7 eons) 7 a eins) B.3ms FtgA Sams 7 ——rrapah 5 roms The plots above reveal thas for the same durdTioepulte, the. (ewer ae fregvency the higher the permiled wen for the duralion of The potse — conen wih our expedalios,3Chapter _1. (even) Seen the Forward-bias region the Ov drop across the diode at any level of current results in a resistance level of zero ohms - the "on" state - conduction is established. In the reverse-bias region the zero current level at any reverse-bias voltage assures a very high resistance level - the open-circuit or "off" state - conduction is interrupted. 4, Semiconductor: materials with conduction characteristics lying between those of a conductor and insulator. Typically materials whose conduction level is a function of the "doping" levels. Resistivity: that characteristic of materials that will determine level of opposition to the flow of charge (current) through the material. Bulk resistance: (from additional reading and section 1.7) the actual resistance of a semiconductor material. Ohmic contact resistance: (from additional reading and section 1,7) the resistance introduced by the connection between the metal lead and the semiconductor material. 6. Copper has 29 orbiting electrons with only one electron in the outermost shell. ‘The fact that the outermost shell with its 29th electron is incomplete(subshell can contain 2 electrons) and distant from the nucleus reveals that this electron is loosely bound to its parent atom. The application of an external electric field of the correct polarity can easily draw this loosely bound electron from its atomic structure for conduction. Both intrinsic silicon and germanium have complete outer shells due to the sharing(covalent bonding) of electrons between atoms. Electrons that are part of a complete shell structure require increased levels of applied attractive torces to be removed from their parent atom. 8. 10. 48eV =48C1.0x1074 TF) = 768x104 e=W= 6.8x10"T _ 6 to x10", av Get x10 ig the ange aasaciates with HelerTe ons, 12. an n-type semiconductor material has an excess of electrons for conduction established by doping an intrinsic material with donor atoms having more valence electrons then needed to establish the covalent bonding. The majority carrier is the electron while the minority carrier is the hole. ‘A p-type semiconductor material is formed by doping an intrinsic material with acceptor atoms having an insufficient number of electrons in the valence shell to complete the covalent bonding thereby creating a hole in the covalent structure. The majority carrier is the hole while the minority carrier is the electron. 14, Majority carriers are those carriers of a material that far exceed the number of any other carriers in the material. Minority carriers are those carriers of a material that are less in number than any other carrier of the material. 16. Same basic appearance as Fig. 1.11 since Boron also has 3 valence electrons (trivalent). 1s.20, Ty = 204273 =243 k= Weoofn, = Neoe/z Clow valve Vp) = 5800 Tn = Ts (ete 1) = Sone BEMEM = Soxio“4Ce 8771) = 7.147 mA 22. (a) Tee20 +273 9243 Re ty600/y = 1600/2 = S800 A «S8001C10¥) Tye Tele tVOre -1) = O1mACe gas -") = x10 Oe 97951) = 0.11076 (1.07 x1 BO Fone = OA an Ip =Ts=0.1.A (by The resuit is expedied aura dicde curr under reverse tice condiBione should eye tha saTuraTion Vadis. Ak var0'% : Ty =0.1p8 Te 30%. : Tye 2COpAI= O2.A (devbore every IE rise im Tompuratore) Tedore : Ty 2 2C0.%uA= O4A Te 50% * Ty =2(ohn)= 0.848 Te bore + Ty2260.8yA) =1.ouA . . LeepA 0.ys0 a> 16:1 sincrenaa din Te rise uh enrpersTure 2 O°, 26. From Fig.ht4: Vp decrenvedl with sreresae. sin TomperaTore LIV: 0.65V 32.0:1 Ts uoreaaR with mureaas in ComperaTore 2pA:O.yA = 20:1 Dt Ip = \SmA, Vp = 0-82V rc = Ye = 0.82v .s44.c7a T> sma As the forward diode evrrenT sinwreacee tht sTaTic. reotslamcs, decrease. 28. 30. Ca ry = ANd = 0.14V~ 0.70 . 0038¥ 23 BI, iSmA-SmA~ 10mA ©) ya ZomV L ZomV¥ = fon = on a 26: OD 7 Toma * SOS © qaite close 32. 2 AM. O72v-0.0W Ip= ima, ras SMa = 55% , Bia, On oe ras = 0.8V— Tpe Sma, ras Ros OSL OTT 2s,Yay= Mb = OAV=O8V cause BIg 1 SmA--emA ‘Vays BNt = OAY=OTV _ OVS hase On KE mA om be 38. 200. 100. CIES cman 40. == We. Bt Nos-28V, Tp —0.2mA and uh Yp=—\00v, Tp —O.4SnA, ough the chamey win Tg vo move Hoan 100% “tre level A Te andl “the venus chemi is reatindy emast for mosTegghishione, AZ. Tes 0.1mQ: 142 oor Tes \SmA: 42 702 Tes zomA: rat ose The resoits suggort the Ack ther “the duymamic or Ae restsTamen decreaces ragidly with imcrenaning current levels. Jt, Uoaag the boom righT graph a Fig.1.36: Tp =S0OmA@ Te? Ae Ee = 250mA, T 210 4G. From Fig. 1-37: Vp= OV, Cp = 3:3¢E Vp= 0.25V, Cp= 4p 4B. Vp=0.2V, Cpa 13¢F Kee shee” amconns rage) = sehen p= -20V, Cy = 04 pF : for gape” saGnuyKoage= BAT Se 5O- gavivz) 16.8V6VR) Z_20yACTe)S2. crate Ave x 100% VzCh-Ted = BY48V) grco% = 0.0534/"C SvGieo%259 4. a0 ' S¢. Ve = 2.0V which is courier stoly | silicas (ZOAV). For gormamivan iT 42.8611 ratio. 58. iqher than gevamiven(S O3V) or Ta nie and Gee Stee Ca) ReleTive eFficionery ie Sms oe 10m 102 0.82 xi00%= 244b % noreaos 0.82, ratio 102 _ 2h 82 ——— & ive efficiency @ ZOmA = 138 Cb) Relative efficien 9 Bees 12 “138, 100% = 24% snoremes 136 — ratio LAZ 21.03 3g ©) For currents grestor “than watt SOMA ‘the goraniX aincrean, is significant, tess “Hoan hiner currents A, leste— one oe meron coronas A cay = 20.25 e 275° —— Fig. VSSQ) #75) ® os 4=40°Chapter Z Codd) = 24.24 m AQ amd ie will we + Ips = BY A, The load Ii N wlersedl oh Tp= E = BY Tag = 22.2mA Vg = E-Vpg = BV—0-1V= 13V © Vope ov Ip, =24.24mA Ve = E- Vbg = 8V-ov=8v For (a) +Cb? levels of Yop and Trp are quite dose. Levels Pere Ce) ave reasmably close buT a0 expected dua To Weve agelict volTlase e. 3. Load Uwe through Tpp=!0mA 4 chanacterhTics and Vye WV w io lersee Tp ais oe 1.25 mA. sl2SmA=E = Iv Tp =N2smA=E =v 5. ca) T=OmA ; dicde reverse—biaced, (OY Va gg = 20¥—O-1V = 19.39 (Kirchhoffts vorta se ans) Ts '93V _ 04058 “ 208. OT =1OV 1A, contr branch open vos. = 5 1. @ Vy=_2en(z0v-0av-03v) Zien+ Zest 4 =4.5v = £czov-w) =¥ 014v) = ESV CO) TD = sov+2V-0.1V Lu3v 2 1.41SmA Vea ster 54 Via TR= Cas man dts) =4V Ve = V'=2V = GV-2V=1V 4. Cay Vo,= 12v-0.01V= av Vop= 2.3 fb) Vo, = -10V #0.3V-+0.1V= =4V, = 2mA, Vog=—(2mAX3.3e2)=-6.6V T= lov-onv-03v _ dv VZee+3.3e2 4SkR 10U1. Ca) Ge diode Yon" erevewTuing Si diode Prem Tormaing "on" Vo = WOV—0.3V = 4.1V (&) Ls lbv-0.7V-0.7v-12v _ 26V TR = Reese Vo = I2V + (0.553mA X44.7e2) = MCV = O.553mA 13. Fer the gawaslel Si- 2k branches a Thevenin equivalent will vresurt (fer “ont dialer) an o aurgle series branch Joana ee vesisTer as showre below: vey 1 Fea + ae = 3043v) eS F2ER Lev Em, Pm Zang = S2Y = 3.1mA eee Fe p= Tek = 3.1mA z z 1S. Both diodes "on", Vy = lov- os 17, Both diodes "off", Vo = 10V 19. OV ah ant Termine? is “wore pasiTive’ than -SV a4 the other iupeT Termine, Therefore acowme lower dicde “on” and upper dicwe. “off The resu ft: -5SmA Vo= OV —onVv = 0.1 The resuiT Fugports “the above Assumptions. 2M. The Si diode recuires mere Terminal voltage raw “the Ge diods, Sete aes aceasta Si diode “off" and Ge dicde Yon" ‘the resutT: Vo= SV-o3v =41V The vertu suggerTs the abour scoumeTions. Using Vac ™ 0.318 (Vm—Vr) AV = 0.318 CVm-o-7Y) Solving: Vm= 6.48V = 101 we z6v fatiad .BSmA 01 ~e9Bv uu a3,28: v= Buoy = 155.56V Vae = 0-318 Vm= 0.318. (15S.Sev) = ATV S5.5oV AT Prygy = bmw = 00-7V)Tp Tp = MieW = 2oma Vv O) 4A7eallSeese = 4-34esz Vp = OV- oV= 154.3 Zap = 189-39 = 26-iaA mm Tres OO or = Ty = 56cTimA. 18.36m0 diode = “ee = SectimBln 18.somh @) yes Tp =2omA> 18.36mA 2 Laide = 36-71MAD> Emus ZOmA 24. ih Piv = 1009 Séov au. e gulte Te tet 4, becom lefT dicde Yous" Bree N22 =e Vo ies Q70v) _ se.e7v coed Wes. + 2.2 Negative guise YE Tog left diode Sons", boom left diode, “off* Ve, = bikes2zQtIov) _ seciv "eee Mesa 2.2 sz, Vae= 0-630(S6.67V) = 36.04V rd ; Izv BB. Ca) Postlive pulse od) Vit 7 No= 2keseCiov—-00V) _sepy |" Lov UN 2an + ZZ RSt Negetive prise aac 4% lav WO Positive evise y No = tov ~o-Tv + Sv =43V + Low Negative pv: we corte et squat Di=OV 235. (4) Diode “m* r wy RIV For i >47V, Vo y+oav= ATV For mi < 4.1y, diode “off” amd Me Me ZARTV buT Me ong. acwoss “the Sion Fer at: >+t7y, % For ah, <1, diode “off, Tp =Te= Om an 3 We ay o= Ob Mz aON, Me=— AV 37a) Startwing with UL= -20v, the diode is du Ha "en" Tate amd he cagasiiior quick changge av Te = 20V +. During this stoma 4 time Ue is acvont “the on" Bods (shevT-cauuaT equaivalecF) a2 Ng= OV When aj swiThes Te Ha +20V lev the Rioda ators tha “oft sraTe Copen- etrouit equivatent) aunt Nox Wir Ue = 2OVH2OV=+HOV "%, ° 4ov 4 TEL ising d} Vow ToaRswingg AU el & t sing 4 swing (bh) STanting with Wy = —Zov, the diode a sin “tha on state an the opacto~ chan To —ISV +. Note thas Wp = +20V Om Athe SV supgly ae Sad tive heross te capacitor: pang thie Time stove tr, is across “m" dieds and SV svegly be = - SV. hon Wy switemes To the +zov level the diode eTors the Soff" grate amd Yon Vite = 2OV+ISV = 3SV h +35V 13,34. (ay Pe RC = (SOW ICO.1UF) = Soms St= 28me de) Sa=zBms >>T = 1: ze Gey Positive guise ge Vo= o.5ms, Sot! -2V +oave —1.3V 3 Te 10V+2V—O7V = IL3V Diode "on" am. Capacitor chan. Agative eotse Me! Diode tof" andl Vom —iov—thave ~213V -. = SAY J-2.3v HL Network of Fig. 2161 with 2V ballery rovers pane + & I aN AB.aNZ <12v, R= Me = Y= con bag F~ 200m MLaVesizv= Biv 5 cose Ciev) RurRs Con+es 20 +1ZRs=460 12Re= 2HO Es=202 cb) — Pe mag = V2 Tz man =Ulzv}Kz00mA) AWS 45. AT 30V ue have T be sure Zener diode is "ow" Vie zov= Be» Nee (ov) Ree lees Solving, AT. Viq = LHIACIZOV) = 161 68V Nyy = 21164. 68v, 14Chagter Beery = SY =221mA 2.(ay Ip= BR 2zen she load line exTends from Fp=2:27mA Te Vp= SV. vy Trg ZmA bg % OF ad 2 () myo = BY oe lotta he lend Uinta eatends from Tne 10.t4mA Te Vp= SV. Yn = 0.8v 1 7ap% Ie « =27.78mi Toe B= Fron 727789 ame toad line @¢Tends from Ips 2778nA Te VbeSv. Vop% 0-43V, Tn, = 22.5m0 The vesviting valves 4 Veg are quite close while Trg aeTemds from ZmA To ZZ-SmA, +6), oes ExYe 2 30V-0.17 213.3208 = ZAR Vp = O.1V, Vg= €-Vp= 30v-onv = 203V SO) T= Exe. SOV—OY = 13.64mA =~ 13.44 A Baer Vp = OV, Vp = Sov Ayo) eter, EDD Vr the levels qh Tp a8 Vin one quite cloce. 6. cay Diode for wand-bieoed, Kirchhotf's vo Tage laws Cew): -SV401V-Vo=O a “s No= —43V Te=Te=' =lYa Av ssmA 22k (en Diode forwanct-biaceds Ip= Sv-0rv Resse Vo = Vistas * Vp = (124m AKA Tee) +O.7¥ 124A 3 B. 6a) DeTerminoe the Thavenins eggeiveteut cirasit fr-the 10mA scores, amd 2.22 resister: En, = TS = C1OmAKZ.2e2) = 22V omen Diode forwand-biaced BVO een ZreRetTKs Vo = Fp 2es) = CO.26mAKIZER) =251V Ips (bY Drede for ward-biaoed Tp = ZovesV—O7V_ ©. BestKincnhoff's volTage lass: CCW) +o -O2V +5 =O Vo= —4.3V 10. Ca) Both diodes forward-biare, Tee WY=OTV LS hioomA Test onTica diodes : Tp = Tea H106mA_ 205mA = 2 — Pssumnis Ve 14.3 CO RiguT’ diode forward-biaced: Tp= 'Sv+Sv-o7y_ TENA IV B.TIm A Ne = \SV—0.1V= 14.3¥ th diodes forward biased, Vo,= OAV, Ve, = 9.3V Zipe = 2OVE OV a 19.30 2 143A C2 vest, Test x, = OV 0.30 5 0.851mA oats Oriese ECSi diode) = Zea Torna = 19.3mA—0.851mA = 18.45m0 V4. Beth diodes “off, the threshold voltage gorv umavailatote for either diode. Ve = OV, lo, Both diodes "on". Ve Vv 1B. ‘the Si diode Wh —SV ar the cathode is "on" wu! is “oft. the reso is Vo = —SV+071V= -4.3V the other 20. Sunlee atthe sysTem Termiasae ae a 1OV the required AiRfevence of OF1V across either diode cammol be esTebliched. Therefore, Sitn diodes ant Noff" amd Vo= H1ov a> esTablished oy 1OV supply converted Uo Vest resisTorr 22. Vacs O.318Vae => Vaz Vide = 2V = ©.28V are SUB O31B a ov A u.29v 162.424mA, on a] Tnag (22te2) = :28V =2.855mA 22uR Tamme = Thmog + Timp 22k) = OVA MAT 2.855 mA = 3.18mA T8mA OmA RO. Diode will cemduT when Uys OAV, Theat +o, We=OAV = le) TORR + 1eSt Solving: 0p = O71V For 1; 2 OTTV Si diode it Son" amd p= O.1V Fev Wy OFTIV Si dinde open aml level Te determina by vortage divider rule: Pps O8SG2:) = 0404: oy iorm ete Jo Fer aye -10v: N= 0.904 (-10v) =—9.09v Wher = 0-1V, Ming, = mag ~OTV Temap= FY = 43mA Tynagbreverse) a tov reverse) = 30) eae mer VeQ+10es2 0.404mA 7BB. C2) Vy VE"CIZ0¥) = 169.7V Vim = Vin - 2p 2164-1 Roa) 1641 — Wty = 168.3V Vac = 0.630 (168.3V) = 107.040 GW) Piv= Valea) Vp = 168.3V +07V= Led (2. Tpimag = Yom 5 168.3V_ e8.3mA Re Vest AD Pro = VoTD = CO7V) Emap = COAVINGE.3mAD = 17.8imW 30. Positive hattrencte ASE Voltage -Aivider rote: Vo = 2:21 Vian) aaog = BRR mes 2akar22es Eine) = 4 Goov) = Sov toni, fo Reroes the 22s vember adivig a2 stead is he same. dew rule: a 22k, eno = FEEL Vi nae) Zen e2eXse = EM a = 4.Goov) Sov Vac = 0.636 Vm = 0.636 (50V) = 31.8 32. (ar Ti atede ogen for porvtive pulte AU: and y= OV For -20V < 72 2-0.7V diede "om" amd n= *OTV For Wi; = -20V, W2=-Z0v +07V=-14.3V Fer i 2 -O.:1V, Nye - orV40V =OV re ov 18(oe) For 01; € SV the SY baller y will insure the diode is forwand-biaced and Woe ATe- SV On ue=5v No =SV-SV=0OV 20 Yo eM \ TEsv sca) For}; =20¥ the dicde is reuerte-biaced and y= OV. Fer #2=-SV, Wi overpowers the Z¥ haTern and “the divde is “or Peeiging Kivchhetfls voltage law aa the clodenise clivecTiow : a, -SV +2V-0,=0 Wee -3V a ov ov ra 6) ~3v For Wi220V the 20V level overgowers ‘the SV sugglyy and the diede is Sow". Ueaig the short cireniT equivatert forthe diode we fied Woe = TOV. For A =-5V, both Wand the SV eugely revevse—biae the diode and separate from Vo. Woweuer, ty Ts Conmeret AirecT2y through the, 222s resistor To the SV supely aud U,= SV ah eS 36. For the positive region A Ui? The right Ft Aichle is reverse bicoel The lof Staiode Is "ow" Jor levels Awe gredier than S.SV+OAV= EV. Wo fac, y= CV for Wi 2 OV For Wr COV both diodes ave reverse-biared and Mie %j- For the aigative region Ao: the left Si ai obelis reversebiesed. The righ $i diode is "ont dor levels AWE more Uagerive, than 7.3V +0V= BV, lo fad; w=-8V {Go <-8v For 1% >-SV both diodes are reverse—biooed Amd. Wo= OZ. 9" ev 7 Ns ~8v Bg Fer -BV.2 5, COV there is 0 cmducTiom throug le the 101, Pesistor due te the lack of a compli circa. therefore, Ug Om For 1 2OV Wigs Mz -Vp =O Fer mia 10V, Wa = tov-ev= 4V A igs HV 5 Ot mA ond Can Seo Fr Oc S-8v gs Ui Te = MOV Fer vz e-10v 2 Sas 10VHRVe -2V Bp amd ig = =2¥ = -0.2mA, 3B. (a) For negate half cycle capacitor 2 To peade vekus of 1e0v—OAV # NAV with golaniTyC— A+). Fhe osteo We fs directly auross the “em” Alode rede Teitg Ain y= “ONTV 40 @ negative quake Vitus. Eo ne auat positive half eyele Oya WTE+ NA BV Hit @ peake vabve dy argo $H9.3V = 328-20 134.2 Vverticet shift ¢ nasv tb) For positive half cycle capacitor changer To peal. vadus 4 120V -20V-O.7V = 44.3V eth polarity + He —) - The osTesT [© OV +O.1V= 20.1V For mapt magetive half exete cca vate Ay om = \2ov— 44.3 = - 219.3 2 Ape WL—AVBV With mageTive Lvertiat shife A -aaeycook. Ussing the idle? diode oggrorimetion the verTicat shifT be 120 vetherthan 119.3V amd -100V rather tham 49.3 Dent ca mnak “the iduck dicks apgranimation worl eiTainely be eg grogrinte uo thes peat Ce). Usd HO. SoluTion is weTwort of Fis. 2.154C6) uorug « IOV supply in place ate ae ors 5 ety ree 42. (a) lothe elosuner of the Zener diode V.= hsxzov) Lay Teo T2208 VHA EN z =10V and diode won cond Ting therefore, I= Te = 2OV = SOmA Zz0s2 + \B0se wim Iz = Om amd VWs av CY Wy the atesence 4 the Zener diode Vs 4Tos(2ov) Lis.eay 470.5% +2203. VL= 13.62> Vz = \0V and Zener diode "or" Therefore Vi= IOV amd Vp.= 10V Vee, = Yaron = HSHSMmA 'V/atos: = 21:26mA ASS mA-2L28mA = 24 ITRA © P = 4oomw =Vz,I, =Gov)r, Tz = 4oomW. Homa 7 Leming = DR Lez, Re Mh = HSNSmA-HOmAS S4SmA sov Timing SAtSmA \,834.8052 Lange Bi veduces Ty amd forces more A Te, % gars hrovgh Zener diode, CA) lathe aloronce d\-tha Zener diode. Vz 18v= BL Gov) Rw 0, JOR +2200=25EL, IRL =Zz00 44. RLS zz0st Sube Tre Ve 2 YE is fined ut wise. Tom Ye = fined Tey will occur when Iz Roda Tha mapionven vena wea mapimun, The mozimom leek A Tey Le ad Term dTormive “Ha matimum permissible level acl a= Teese = WRN S coma Tz, a Ve av T= wa V2 SY =36.36mA RL Re 220s Tag = T2+Ty = SOmA+SC.2OmA = B6.36mA = 86.5emAIi2) + BV = 7B6V+8V = Any velae A wd thet oc ceede 15.86V will reseiT ia AcurreuT Ty than will Speed The marimum vals. Ne. For w= +50v! Zy forwand-biared a 0.1V Ze veverse-loiseeR at the Zener goTenTin and Vy, =10¥, Therefore, V~ Vz,4Vz,= O.AV+10V = 10-1¥ For ar: = - SOV: Zy reverse bincehL atthe Zener goTenTick andi Vz, Ze forward -biaced “OV theretore, Vo= Vz,+Vz, = —100¥ ‘Ave tor “ I “ 10a ann wove Naither Zener diode will reads For a SV-s, Zener poTenTiok. Ye fad, for either polarity 4 Wy ona Zener divds weit be sin ae Crewil STahe res Mang O Yes e- B sy 4 “Sy 4B. The Piv for cask diode it Zen PW = BCC) 2Cha gter 3 (Odd) |. forwand-and reverse-biasek . 5. I 9. Teahyte => Tex t00Te Le

Tes Te—p = 2.8m A-0.02 mA = 2.76mA, ge = Te = 218M = 0.903 Te ZF emaA mn a Ce) 3 a@Te= (SE, )Ts* = (288,.)¢49.00= ema Te = Te 2 tema =~” baas a SOOMW/ gg, =2Z5mA 25mA Vis ToR. = (25m 0K ee) =25V Vo = 28¥ = 50 Bo Vo osv 14,— Al (ay G= EA = 2m sues wn ac Be. whee onan Ga ies1 Teeo= 0.30 @) Tego = (1-) Tego, = C1 0.442 K 0.3m) = 2 HP Ca) Pac = Te 2 G.mA _ 93.15 me BopA oh Gae= Fe = 0854 2170 “SpA . = 34mAL us. © Gace B= S508. yoas «© 23Low Tp, high Vee > bigh betas High Te, low Vee —> lower beTas as. 24mA Cac= = 2A mA 2 We CAD ge does chamas from pf. To @T onthe characTerisTies. 25 pA mK =. = tte = 0991 Gr e+) _ Te = Teja =24mA/oaa1 a7. 4. OsTgsT Chanadienis Tics * Te ce © Corves ane. essen att, G- |e =a sealer a shows. Ve ce. Vec Weet characteristics: Commen= emiller MageT cheraTerisTres may be weed diveetig Gov comman=colleTor etaateTions. SY Te=Temep » Ver = Femar = 30mm) _ sv Teme O78 Vee Vena? Fox Pemer = 20-W_ ona VeSmag 1M Tes mA, Veg= Vem somW ea nsv mi a BOmS = Bm TOV 33. Teg. = 200m0, Vog,_.= 30 Phmag = C2Smn Tes Tema Vers Pomay = O25mW = 3.125V Tenn 200m8 Vee = Veemay? Fe = Fomee _ 2SmW = 20.03mA Yen 3eY Te = 100m, Veg 2 MDmey _ G25mW = 6.25V =, 1OomA ®, Vee =20V, Te = Tome O25) = 125m lg 20¥ 241 3080 “Vee wv) 35. hee (Ode) with Veg = 4V, T= 25°C. Tex OmA, hee 2O48100)= 43 Te= tom, hee F0.98(100)= 48 hge (fae) with Vee = Ov, T= 25°C, Te = O1mA, hy = C= OMA, ge = 12 Tes 10m, hy 2160 For both hpe amd big, the came srewenat ain colle Tov evrvesT resviTed Us a aimilan mivenae Wreldtivelyy speak mag) Ma the sarin parameter: he levels aut higher de hy ee mote “ade Vee is higher Bao. BT. @) Oe Te=imA, hee Qe TezlomP,hge® 160 GO) -the rereits comfirm The conclurions J @revlems ZBamdat ther Bela Tends Ue tinereaas with imorecesing So ieeTer eurret. 34. a) Oe = S| = Non =12.2mA _ 3.8mA - 140 ATalves3v SqMA-CORA — ZORA © Pac= He Bek jo zour saga Soet ©) Gre = HmAr2MA 2 zmA LS @ TA Bah ~ Gna 202 ® Cae =- a = 230.11 ghithy tg her thane Cac CE 10%) 20 2 sk Ce) Iw both caaee Pde C419) iw genew at Pac + Boe phorease wits unwenorng Te Aine Vee dud bark ducreaee for Bacreaoua lwets A Vee Lor o finee Te. Hower, h Te dreveaces while Vee Radteoree whan wen ea Two goints mm the tharaTuisTics chamag our level eo Bac many wet margnedi aX, Ie ote som the a ae Acanerar neo Me eS in he cor pe wong be of cling ease Bae Pa 1 a possibility eure He Lovato Coe relaMivel, Lose. 5