SPP20N60S5

SPB20N60S5

Cool MOS™ Power Transistor VDS 600 V

Feature RDS(on) 0.19 Ω
• New revolutionary high voltage technology ID 20 A
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge P-TO263-3-2 P-TO220-3-1

• Periodic avalanche rated 2

• Extreme dv/dt rated 23

1

• Ultra low effective capacitances P-TO220-3-1

• Improved transconductance

Type Package Ordering Code Marking

SPP20N60S5 P-TO220-3-1 Q67040-S4751 20N60S5
SPB20N60S5 P-TO263-3-2 Q67040-S4171 20N60S5

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 20
TC = 100 °C 13
Pulsed drain current, tp limited by Tjmax I D puls 40
Avalanche energy, single pulse EAS 690 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 208 W
Operating and storage temperature T j , T stg -55... +150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 20 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.6 K/W
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=20A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=1000µΑ, VGS=VDS 3.5 4.5 5.5
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - 0.5 5
Tj=150°C - - 250
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=13A, Ω
Tj=25°C - 0.16 0.19
Tj=150°C - 0.43 -
Gate input resistance RG f=1MHz, open Drain - 12 -

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Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 12 - S
ID=13A

Input capacitance Ciss V GS=0V, V DS=25V, - 3000 - pF

Output capacitance Coss f=1MHz - 1170 -
Reverse transfer capacitance Crss - 28 -
Effective output capacitance,3) Co(er) V GS=0V, - 83 - pF
energy related V DS=0V to 480V

Effective output capacitance,4) Co(tr) - 160 -

time related
Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 120 - ns
Rise time tr ID=20A, R G=5.7Ω - 25 -
Turn-off delay time t d(off) - 140 210
Fall time tf - 30 45

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=20A - 21 - nC
Gate to drain charge Qgd - 47 -
Gate charge total Qg VDD=350V, ID=20A, - 79 103
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=350V, ID=20A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er) DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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SPB20N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 20 A
forward current
Inverse diode direct current, ISM - - 40
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=350V, IF =IS , - 610 - ns
Reverse recovery charge Qrr diF/dt=100A/µs - 12 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.00769 K/W Cth1 0.0003763 Ws/K
R th2 0.015 Cth2 0.001411
R th3 0.029 Cth3 0.001931
R th4 0.114 Cth4 0.005297
R th5 0.136 Cth5 0.012
R th6 0.059 Cth6 0.091

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

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1 Power dissipation 2 Safe operating area
Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
240
SPP20N60S5 10 2
W A

200

180 10 1

160
Ptot

ID
140

120 10 0

tp = 0.001 ms
100
tp = 0.01 ms
80 tp = 0.1 ms
tp = 1 ms
60 10 -1 DC

40

20

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
0
10
75
A 20V
K/W
15V
12V
11V
60
10 -1
55
ZthJC

50 10V
ID

45
40
10 -2 D = 0.5
D = 0.2 35
D = 0.1 9V
30
D = 0.05
D = 0.02 25
-3 D = 0.01
10 20
single pulse 8V
15
10
7V
5
10 -4 -7 -6 -5 -4 -3 -2 0 0
10 10 10 10 10 10 s 10 0 5 10 15 20 V 30
tp VDS

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SPB20N60S5
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
35 1.5
mΩ 6V
A 20V 6.5V
12V 1.3 7V
10V 9V 7.5V
1.2 8V

RDS(on)
25 8.5V
1.1 9V
8.5V
ID

10V
20 1 12V
20V
8V 0.9

15 0.8
7.5V
0.7
10 7V
0.6
6.5V
0.5
5
6V
0.4

0 0.3
0 5 10 15 V 25 0 5 10 15 20 25 30 A 40
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 13 A, VGS = 10 V parameter: tp = 10 µs
SPP20N60S5
1.1 70
Ω A

60
0.9
55
25°C
RDS(on)

0.8 50
150°C
0.7 45
ID

40
0.6
35
0.5
30
0.4 25

0.3 20
98%
15
0.2
typ
10
0.1
5

0 0
-60 -20 20 60 100 °C 180 0 5 10 V 20
Tj VGS

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9 Typ. gate charge 10 Forward characteristics of body diode
VGS = f (QGate) IF = f (VSD)
parameter: ID = 20 A pulsed parameter: Tj , tp = 10 µs
16
SPP20N60S5
10 2 SPP20N60S5

V
A
0.2 VDS max

12 0.8 VDS max

10 1
VGS

10

IF
8

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -1
0 20 40 60 80 nC 120 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V
20 750
mJ

A 600
550
500
EAS
IAR

450
400
10
350
Tj(START)=25°C 300
250

5 200
150
Tj(START)=125°C
100
50
0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj

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13 Drain-source breakdown voltage 14 Avalanche power losses
V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=1mJ
SPP20N60S5
720 500

W
680
V(BR)DSS

PAR
660
300
640

620
200

600

580
100

560

540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5
14
pF µJ

12
10 4
11
Ciss
10
Eoss

9
10 3
C

7
Coss 6
10 2
5

4
Crss
10 1 3

1
10 0 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS

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SPB20N60S5

Definition of diodes switching characteristics

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P-TO-220-3-1
B
10 ±0.4 4.44
A
3.7 ±0.2 1.27±0.13
2.8 ±0.2
15.38 ±0.6

0.05

9.98 ±0.48
13.5 ±0.5
5.23 ±0.9

0.5 ±0.1
3x
0.75 ±0.1 2.51±0.2
1.17 ±0.22
2x 2.54
0.25 M A B C

All metal surfaces tin plated, except area of cut.

Metal surface min. x=7.25, y=12.3

P-TO-263-3-2 (D 2-PAK)

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© Infineon Technologies AG 1999
All Rights Reserved.

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Rev. 2.1 Page 11 2004-03-30