VISHAY

1N5059 to 1N5062
Vishay Semiconductors

Standard Avalanche Sinterglass Diode

Features
• Controlled avalanche characteristics
• Glass passivated
• Low reverse current
• High surge current loading
• Hermetically sealed axial-leaded glass envelope

Applications
Rectification diode, general purpose
949539
Mechanical Data
Case: Sintered glass case, SOD 57

Terminals: Plated axial leads, solderable per Mounting Position: Any

MIL-STD-750, Method 2026 Weight: 370 mg, (max. 500 mg)
Polarity: Color band denotes cathode end

Parts Table
Part Type differentiation Package
1N5059 VR = 200 V; IFAV = 2 A SOD57
1N5060 VR = 400 V; IFAV = 2 A SOD57
1N5061 VR = 600 V; IFAV = 2 A SOD57
1N5062 VR = 800 V; IFAV = 2 A SOD57

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Value Unit
Reverse voltage = Repetitive peak reverse see electrical characteristics 1N5059 VR = 200 V
voltage VRRM
see electrical characteristics 1N5060 VR = 400 V
VRRM
see electrical characteristics 1N5061 VR = 600 V
VRRM
see electrical characteristics 1N5062 VR = 800 V
VRRM
Peak forward surge current tp = 10 ms, half-sinewave IFSM 50 A
Average forward current RthJA = 45 K/W, Tamb = 50 °C IFAV 2 A
RthJA = 100K/W, Tamb = 75 °C IFAV 0.8 A
Junction and storage temperature range Tj = T stg - 55 to + °C
175
Max. pulse energy in avalanche mode, non I(BR)R = 1 A, indicutive load ER 20 mJ
repetitive (inductive load switch off)

Document Number 86000 www.vishay.com

Rev. 4, 07-Jan-03 1

This datasheet has been downloaded from http://www.digchip.com at this page

1N5059 to 1N5062 VISHAY
Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Value Unit
Junction ambient Lead length l = 10 mm, RthJA 45 K/W
TL = constant
on PC board with spacing 25 mm RthJA 100 K/W

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Min Typ. Max Unit
Forward voltage IF = 1 A VF 1 V
IF = 2.5 A VF 1.15 V
Reverse current VR = VRRM IR 1 µA
VR = VRRM, Tj = 100 °C IR 10 µA
VR = VRRM, Tj = 150 °C IR 100 µA
Reverse breakdown voltage IR = 100 µA 1N5059 V(BR)R 225 1600 V
IR = 100 µA 1N5060 V(BR)R 450 1600 V
IR = 100 µA 1N5061 V(BR)R 650 1600 V
IR = 100 µA 1N5062 V(BR)R 900 1600 V
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 4 µs
Diode capacitance VR = 0 V, f = 1 MHz CD 40 pF

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

200 1000.0
PR – Reverse Power Dissipation ( mW )

VR = VRRM VR = VRRM
160 RthJA=
IR – Reverse Current ( mA )

1N5062 100.0
45K/W
120 100K/W
1N5061 10.0
160K/W
80
1N5060
1.0
40 1N5059

0 0.1
25 50 75 100 125 150 175 25 50 75 100 125 150 175
15764 Tj – Junction Temperature ( °C ) 15765 Tj – Junction Temperature ( °C )

Figure 1. Max. Reverse Power Dissipation vs. Junction Figure 2. Max. Reverse Current vs. Junction Temperature
Temperature

www.vishay.com Document Number 86000

2 Rev. 4, 07-Jan-03
VISHAY
1N5059 to 1N5062
Vishay Semiconductors

3.0 50
VR=VRRM
I FAV – Average Forward Current ( A )

f=1MHz
half sinewave

CD – Diode Capacitance ( pF )
2.5
40

2.0 RthJA=45K/W
l=10mm 30
1.5
20
1.0

RthJA=100K/W 10
0.5
PCB: d=25mm

0.0 0
0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0
15763 Tamb – Ambient Temperature ( °C ) 15766 VR – Reverse Voltage ( V )

Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Typ. Diode Capacitance vs. Reverse Voltage

100

Tj=175°C
10
IF – Forward Current ( A )

Tj=25°C
1

0.1

0.01

0.001
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
15762 VF – Forward Voltage ( V )

Figure 4. Max. Forward Current vs. Forward Voltage

Package Dimensions in mm
∅ 3.6 max. 94 9538
Sintered Glass Case Cathode Identification
SOD 57 technical drawings
according to DIN
Weight max. 0.5g specifications
∅ 0.82 max.

26 min. 4.2 max. 26 min.

Document Number 86000 www.vishay.com

Rev. 4, 07-Jan-03 3
1N5059 to 1N5062 VISHAY
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com Document Number 86000

4 Rev. 4, 07-Jan-03