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Sla6023 Ds en
Sla6023 Ds en
2 8 9
3 7 10
4 6 11
R1
5 12
Characteristic curves
IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN
(VCE=4V)
12 –12 12
A A –5mA
mA
m 0m 5mA IB=–10mA
30 1
100
–3mA
IB=
10 –10 10
–2mA
2mA
–8 8
8
IC (A)
IC (A)
IC (A)
1mA
–6 6
6
–1mA
–4 4
4
0.5mA –0.5mA
°C
25°C
2
C
125
–2
75°
2
–30°C
T a=
0 0
0 0 –2 –4 –6 0 1 2 3
0 2 4 6 VCE (V) VBE (V)
VCE (V)
10000 10000
–10
typ
typ
5000 5000
–8
IC (A)
hFE
hFE
–6
1000 1000 –4
°C
500 500
75°C
125
25°C
–2
°C
Ta=
–30
200 200 0
0.1 0.5 1 5 10 12 –0.1 –0.5 –1 –5 –10 –12 0 –1 –2 –3
IC (A) IC (A) VBE (V)
Ta=125°C
10000 10000
5000 5000
75°C
5 °C
hFE
12 °C 25°C
hFE
= 75
Ta
5°
C
2
0°
C
1000 –3 1000 –30°C
500 500
200 200
0.1 0.5 1 5 10 12 –0.1 –0.5 –1 –5 –10 –12
IC (A) IC (A)
114
SLA6023
Electrical characteristics (Ta=25°C)
NPN PNP
Symbol Specification Specification
Unit Conditions Unit Conditions
min typ max min typ max
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 2000 5000 12000 VCE=4V, IC=5A 2000 5000 12000 VCE=–4V, IC=–5A
VCE(sat) 1.5 V –1.5 V
IC=5A, IB=10mA IC=–5A, IB=–10mA
VBE(sat) 2.0 V –2.0 V
VFEC V 2.0 V IFEC=5A
trr µs 1.0 µs IFEC=±0.5A
ton 0.8 µs VCC 25V, 1.0 µs VCC –25V,
tstg 6.0 µs IC=5A, 1.4 µs IC=–5A,
tf 2.0 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
fT 80 MHz VCE=12V, IE=–1A 120 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=10V, f=1MHz 150 pF VCB=–10V, f=1MHz
Characteristic curves
VCE(sat)-IB Characteristics (Typical) θ j-a-PW Characteristics
NPN PNP
3 –3 20
10
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
5
2 –2
IC=8A IC=–8A
IC=4A IC=–4A
1
1 IC=2A –1
IC=–2A
2 –2
VCE (sat) (V)
init
15
eH
PT (W)
ea
10
0×
tsin
10
k
0 ×2
10
Ta=125°C –1 Ta=–30°C 50
1 × 50
75°C 25°C × 2
25°C 75°C Without Heatsink
5
–30°C 125°C
0 0 0
0.1 0.5 1 5 10 20 –0.1 –0.5 –1 –5 –10 –20 –40 0 50 100 150
IC (A) IC (A) Ta (°C)
10
10
–10
0µ
s
1m
5
10
1m
–5
100µs
10
ms
s
ms
IC (A)
IC (A)
1 –1
0.5 –0.5
115
Package Type (Dimensions)
9.0 ± 0.2
11.3 ± 0.2
2.3 ± 0.2
a
2.5 max
11.3 ± 0.2
9.0 ± 0.2
4.7 ± 0.5
4.7 ± 0.5
(2.54)
1.0 ± 0.25 0.5 ± 0.15 a: Part Number
1.0 ± 0.25 0.5 ± 0.15 (2.54) 9 × 2.54 = 22.86 ± 0.25
b: Lot No.
7 ×P2.54 = 17.78
0.5 ± 0.15
1.2 ± 0.2
4.0 ± 0.2
C1.5 ± 0.5
0.5 ± 0.15
1.2 ± 0.2
C1.5 ± 0.5
4.0 ± 0.2
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
1 2 3 4 5 6 7 8
Pin No.
• SIP 12 (SMA12Pin) • SIP 15 (SMA15Pin)
31.0 ± 0.2 4.0 ± 0.2
2.5 ± 0.2
4.0 ± 0.2
31.0 ± 0.2
2.5 ± 0.2 b
10.2 ± 0.2
a
b
10.2 ± 0.2
+1.0
9.7 ‒0.5
R-End
2.4
+0.2
(10.4)
0.55 ‒0.1
1.46 ± 0.15
* 4.0
+0.2 +0.2
0.65 1.15
± 0.7
* *
‒0.1 ‒0.1
+0.2
2.54 0.85 ‒0.1 +0.2
14 ×P2.03 ± 0.7= 28.42 ±1.0
0.55 ‒0.1
1.2 ± 0.1
27.94
a: Part Number
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
31.3 ± 0.2
φ 3.2 ± 0.15
31.0 ± 0.2 φ 3.2 ± 0.15×3.8
31.5max 4.8 ± 0.2
24.4 ± 0.2
31.0 ± 0.2 Ellipse 1.7 ± 0.1
φ 3.2 ± 0.15
3.2 ± 0.15×3.8 4.8 ± 0.2 16.4 ± 0.2
2.45 ± 0.2
± 0.2
a
13.0
b
(3.0) 6.7 ± 0.5
+1.0
9.7 ‒0.5
R-End
9.5min
Pin1
2.7
12
+0.2
0.65 ‒0.1
+0.2
1.15 ‒0.1
+0.2
0.55 ‒0.1
* *
+0.2
0.85 ‒0.1
* 4.0 ± 0.7
+0.2
1.2 ± 0.15
1.45 ± 0.15 0.55 ‒0.1
2.2 ± 0.7 14 ×P2.03 ± 0.7
=28.42 ± 1.0
a: Part Number
11 × P2.54 ± 0.7= 27.94 ± 1.0
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Gate burr
φ 3.2 ± 0.15
16± 0.2
12.9 ± 0.2
2.45 ± 0.2
0.6
a
9.9 ± 0.2
17.9 ±
b
(5)
4‒(R1)
+0.2
0.65 ‒0.1
+0.2
20 ×P1.43± 0.5 =28.6± 1.0 0.55 ‒0.1
0.5
3±
4 ± 0.7
31.3 ± 0.2
a: Part Number
b: Lot No.
1 3 5 7 9 11 13 15 17 19 21
2 4 6 8 10 12 14 16 18 20 (Unit:mm)
190 Transistors