BUP 402

IGBT
Preliminary data

• Low forward voltage drop

• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated Pin 1 Pin 2 Pin 3
G C E

Type VCE IC Package Ordering Code

BUP 402 600V 36A TO-220 AB C67078-A4405-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 600 V
Emitter-collector voltage VEC
Collector-gate voltage VCGR
RGE = 20 kΩ 600
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 36
TC = 90 °C 22
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 72
TC = 90 °C 40
Avalanche energy, single pulse EAS mJ
IC = 20 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C 42
Power dissipation Ptot W
TC = 25 °C 150
Chip or operating temperature Tj - 55 ... + 150 °C
Storage temperature Tstg - 55 ... + 150

Semiconductor Group 1 Dec-02-1996

 BUP 402

Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance
Thermal resistance, chip case RthJC ≤ 0.83 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.5 mA, Tj = 25 °C 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 20 A, Tj = 25 °C - 2.1 2.7
VGE = 15 V, IC = 20 A, Tj = 125 °C - 2.2 2.8
VGE = 15 V, IC = 40 A, Tj = 25 °C - 3 -
VGE = 15 V, IC = 40 A, Tj = 125 °C - 3.3 -
Zero gate voltage collector current ICES µA
VCE = 600 V, VGE = 0 V, Tj = 25 °C - - 100
Gate-emitter leakage current IGES nA
VGE = 25 V, VCE = 0 V - - 100

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 20 A 4 - -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1040 1400
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 115 175
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 66 110

Semiconductor Group 2 Dec-02-1996

 BUP 402

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 300 V, VGE = 15 V, IC = 20 A
RGon = 47 Ω - 40 60
Rise time tr
VCC = 300 V, VGE = 15 V, IC = 20 A
RGon = 47 Ω - 70 110
Turn-off delay time td(off)
VCC = 300 V, VGE = -15 V, IC = 20 A
RGoff = 47 Ω - 250 330
Fall time tf
VCC = 300 V, VGE = -15 V, IC = 20 A
RGoff = 47 Ω - 500 680

Semiconductor Group 3 Dec-02-1996

 BUP 402

Power dissipation Collector current

Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C

160 36

W A

Ptot IC
28
120

24
100

20
80
16
60
12

40
8

20 4

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance IGBT

IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T

10 2 t = 17.0µs 10 0
p

A K/W
IC ZthJC
100 µs
10 1 10 -1

1 ms D = 0.50
0.20
10 0 10 -2 0.10
10 ms 0.05
0.02
single pulse
0.01
DC

10 -1 10 -3
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 s 10
VCE tp

Semiconductor Group 4 Dec-02-1996

 BUP 402

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

40 40

A A
17V 17V
15V 15V
IC 13V IC 13V
30 11V 30 11V
9V 9V
7V 7V
25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

40

IC
30

25

20

15

10

0
0 2 4 6 8 10 V 14
VGE

Semiconductor Group 5 Dec-02-1996

 BUP 402

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 300 V, VGE = ± 15 V, IC = 20 A

10 3 10 3

tf tf

t t
ns ns
tdoff

tdoff

tr tr
10 2 10 2

tdon
tdon

10 1 10 1
0 5 10 15 20 25 30 35 40 A 50 0 20 40 60 80 Ω 120
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 300V, VGE = ± 15 V, IC = 20 A

3.0 3.0
Eoff

mWs mWs
E E

2.0 2.0
Eon

Eoff
1.5 1.5

1.0 1.0 Eon

0.5 0.5

0.0 0.0
0 5 10 15 20 25 30 35 40 A 50
IC
0 20 40 60 80 Ω 120
RG

Semiconductor Group 6 Dec-02-1996

 BUP 402

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 20 A parameter: VGE = 0 V, f = 1 MHz

20 10 1

V
nF
VGE 16 C

14 100 V 300 V Ciss

10 0

12

10

8
10 -1 Coss
6
Crss
4

0 10 -2
0 10 20 30 40 50 60 70 nC 90 0 5 10 15 20 25 30 V 40
Q Gate VCE

Short circuit safe operating area Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH parameter: VGE = 15 V

10 2.5

I Csc/I C(90°C) ICpuls /IC

6 1.5

4 1.0

2 0.5

0 0.0
0 100 200 300 400 500 600 V 800 0 100 200 300 400 500 600 V 800
VCE VCE

Semiconductor Group 7 Dec-02-1996

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