Islamic University of Gaza

Faculty of Engineering
Electrical Engineering Department

Power Semiconductor Diodes

Power diodes have large power-, voltage-, current-handling capabilities than
that of ordinary signal diodes.

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Power Diodes symbol and type of packaging

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Diode Characteristics

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Vd

I D  I S (e n VT
 1)
Shockley’s equation
VT  Kt
q

n=1, 2 ( Germanium, Silicon) practically 1.1—1.8

VT= Thermal voltage k  is Boltzman' s cons tan t  1.38 * 1023 j / k

T  is the absoultetemperature in kelvins  237  thetem in C 
IS= Saturation current
q  is the magnitudeof electronic ch arg e  1.6 * 1019 C

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Shockley diode equation

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Forward-bias VD>0

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Reverse-bias VD<0

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Reverse Recovery Characteristics

trr  ta  tb (2.5)
di 2QRR
Tb/Ta is the softness factor (SF) I RR  2QRR (2.11) I RR  (2.8)
dt trr
2QRR
trr  (2.10)
di / dt

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Power Diode Types

Ideally, a diode should have no reverse recovery time.

The power diodes can be classified into three categories:

Standard or general-purpose diodes

Fast-recovery diodes
Schottky diodes

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Standard or General-purpose diodes

Reverse recovery time= 25 us (relatively high).

Used in Low-speed applications.

Current rating : From less than 1 Ampere to several thousands of Amperes.

Voltage rating 50 v to 5 kV.

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Fast-Recovery Diodes

Reverse recovery time< 5 us ( Low).

Used in DC-DC and DC-AC converter circuit (high speed applications).

Current rating : From less than 1 Ampere to several hundreds of Amperes.

Voltage rating 50 v to 3 kV.

Platinum or gold.

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

Schottky Diodes

No minority carriers .

Used in high current and low voltage dc power supplies.

Current rating : From 1 Ampere to 300 Amperes.

Voltage rating <100 V.

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3

Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department

The reverse recovery time of a diode is 𝑻𝒓𝒓 =3us and the rate of fall of the
diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current 𝑰𝒓𝒓

Introduction to Power Electronics , Dr. Moayed Almobaied Lecture 3