SOT223 PNP SILICON PLANAR

FZT757 HIGH VOLTAGE TRANSISTOR FZT757

ISSUE 4– JANUARY 1996
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C
td

tr
* 300V VCEO
ts tf

µs µs
250 IB1=IB2=IC /10

4 1.6
VC E=10V
COMPLEMENTARY TYPE - FZT657 E
IC /IB=10 1.4
PARTMARKING DETAIL - FZT757 C
- (mV)

200
3 1.2

B
ts

Switching time
1.0

tf
2 0.8

ABSOLUTE MAXIMUM RATINGS.

150
td
0.6
V

tr

PARAMETER SYMBOL VALUE UNIT

1 0.4

tf
100 0.2
ts

0
tr td Collector-Base Voltage VCBO -300 V
0.0001 0.001 0.01 0.1 1 0.01 0.1 1

Collector-Emitter Voltage VCEO -300 V

IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -1 A
Continuous Collector Current IC -0.5 A
Power Dissipation at Tamb=25°C Ptot 2 W
100 1.2

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- Normalised Gain (%)

80 1.0 IC /IB =10

- (Volts)

60
VCE=5V
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
0.8

Collector-Base V(BR)CBO -300 V IC=-100µA

40
0.6
Breakdown Voltage
V

20
Collector-Emitter V(BR)CEO -300 V IC=-10mA*
0.4 Breakdown Voltage
h

0
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA
Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICBO -0.1 µA VCB=-200V
hFE v IC VBE(sat) v IC
Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V
1 Single Pulse Test at T =25°C
1.2
a mb
Collector-Emitter VCE(sat) -0.5 V IC=-100mA, IB=-10mA*
Saturation Voltage
1.0
Base-Emitter VBE(sat) -1.0 V IC=-100mA, IB=-10mA*
VCE=5V
0.1 Saturation Voltage
- (Volts)

Base-Emitter VBE(on) -1.0 V IC=-100mA, VCE =-5V*

0.8
DC
100ms
10ms Turn-On Voltage
0.6 0.01 1ms
300µs Static Forward Current hFE 40 IC=-10mA, VCE =-5V*
V

Transfer Ratio 50 IC=-100mA, VCE =-5V*

0.4

0.001 Transition Frequency fT 30 MHz IC=-10mA, VCE =-20V

f=20MHz
0.0001 0.001 0.01 0.1 1
1 10 100 1000

IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Cobo 20 pF VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
VBE(on) v IC Safe Operating Area Spice parameter data is available upon request for this device

3 - 241 3 - 240
 SOT223 PNP SILICON PLANAR
FZT757 HIGH VOLTAGE TRANSISTOR FZT757
ISSUE 4– JANUARY 1996
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C
td

tr
* 300V VCEO
ts tf

µs µs
250 IB1=IB2=IC /10

4 1.6
VC E=10V
COMPLEMENTARY TYPE - FZT657 E
IC /IB=10 1.4
PARTMARKING DETAIL - FZT757 C
- (mV)

200
3 1.2

B
ts

Switching time
1.0

tf
2 0.8

ABSOLUTE MAXIMUM RATINGS.

150
td
0.6
V

tr

PARAMETER SYMBOL VALUE UNIT

1 0.4

tf
100 0.2
ts

0
tr td Collector-Base Voltage VCBO -300 V
0.0001 0.001 0.01 0.1 1 0.01 0.1 1

Collector-Emitter Voltage VCEO -300 V

IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -1 A
Continuous Collector Current IC -0.5 A
Power Dissipation at Tamb=25°C Ptot 2 W
100 1.2

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- Normalised Gain (%)

80 1.0 IC /IB =10

- (Volts)

60
VCE=5V
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
0.8

Collector-Base V(BR)CBO -300 V IC=-100µA

40
0.6
Breakdown Voltage
V

20
Collector-Emitter V(BR)CEO -300 V IC=-10mA*
0.4 Breakdown Voltage
h

0
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA
Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICBO -0.1 µA VCB=-200V
hFE v IC VBE(sat) v IC
Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V
1 Single Pulse Test at T =25°C
1.2
a mb
Collector-Emitter VCE(sat) -0.5 V IC=-100mA, IB=-10mA*
Saturation Voltage
1.0
Base-Emitter VBE(sat) -1.0 V IC=-100mA, IB=-10mA*
VCE=5V
0.1 Saturation Voltage
- (Volts)

Base-Emitter VBE(on) -1.0 V IC=-100mA, VCE =-5V*

0.8
DC
100ms
10ms Turn-On Voltage
0.6 0.01 1ms
300µs Static Forward Current hFE 40 IC=-10mA, VCE =-5V*
V

Transfer Ratio 50 IC=-100mA, VCE =-5V*

0.4

0.001 Transition Frequency fT 30 MHz IC=-10mA, VCE =-20V

f=20MHz
0.0001 0.001 0.01 0.1 1
1 10 100 1000

IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance Cobo 20 pF VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
VBE(on) v IC Safe Operating Area Spice parameter data is available upon request for this device

3 - 241 3 - 240