ON Semiconductor

NPN
Complementary Silicon 2N3055A
High-Power Transistors MJ15015 *
. . . PowerBase complementary transistors designed for high PNP
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
MJ15016 *
solenoid drivers, dc–to–dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055. *ON Semiconductor Preferred Device

• Current–Gain — Bandwidth–Product @ IC = 1.0 Adc 15 AMPERE

fT = 0.8 MHz (Min) – NPN COMPLEMENTARY
= 2.2 MHz (Min) – PNP SILICON
POWER TRANSISTORS
•
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Safe Operating Area — Rated to 60 V and 120 V, Respectively
60, 120 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
115, 180 WATTS
*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol 2N3055A
MJ15015
MJ15016 Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector–Emitter Voltage

ÎÎÎÎ
ÎÎÎ
Collector–Base Voltage
VCEO

VCBO
60

100
120

200
Vdc

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage Base

ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Reversed Biased
VCEV 100 200 Vdc
CASE 1–07

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
TO–204AA
Emitter–Base Voltage VEBO 7.0 Vdc (TO–3)

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector Current — Continuous

ÎÎÎÎ
ÎÎÎ
IC 15 Adc

ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
Base Current

ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
IB 7.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Device Dissipation @ TC = 25
C PD 115 180 Watts
Derate above 25
C 0.65 1.03 W/
C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
TJ, Tstg –65 to +200
C

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Max Unit

ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data. (2N3055A)
RθJC 1.52 0.98
C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

May, 2001 – Rev. 4 2N3055A/D
 2N3055A MJ15015 MJ15016

200

PD(AV), AVERAGE POWER DISSIPATION (W)

150

MJ15015
MJ15016
100

50 2N3055A

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

3.5 10
TC = 25°C
3
5.0 MJ15016
2.5
V, VOLTAGE (VOLTS)

2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages Figure 5. Current–Gain — Bandwidth Product

10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+
30 V 3
2
t, TIME (s)

tr
µ

7.5 Ω
25 µs 1
+13 V SCOPE 0.7
30 Ω
0 0.5

1N6073 0.3
-11 V
0.2
tr, tf ≤ 10 ns td
-5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)

Figure 6. Switching Times Test Circuit Figure 7. Turn–On Time

(Circuit shown is for NPN)

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 2N3055A MJ15015 MJ15016

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (1)
INVERSOR
20) Dado el siguiente circuito inversor (2 BJT) una de las referencias al circuito es falsa:
a) La cantidad de espiras del bobinado N1 debe ser exactamente igual a la cantidad de espiras del bobinado N3 para
obtener una forma de onda simétrica en la carga.
b) La forma y frecuencia de la tensión de salida depende del circuito de control.
c) El transformador permite la inversión de la corriente en la carga al tener una disposición en contrafase en el primario dada por
los puntos homónimos indicados en la figura.
d) En operación normal solo un transistor está activado por semiciclo.

20) Una es falsa:

a) La relación N1/N3=N2/N3.
b) La frecuencia de la tensión en la R es independiente del circuito de control.
c) Los transistores no pueden estar encendidos al mismo tiempo
d) Los transistores están sometidos a tensiones de 2.Vcmax de inversa

21) Si V1=120V, la corriente en la carga es 15A y la relación del transformación N2/N3=0,2 (suponiendo ideal el transformador)
¿cuáles serán los valores de tensión y corriente que soportan los interruptores.
a) IMAX=3A , VDSO=120V ; b) IMAX=3A , VDSO=240V ;
c) IMAX=75A , VDSO=120V ; d) IMAX=75A , VDSO=240V
15/0.2=75A y la tensión es el doble si no tiene diodos de protección

21) Dado el siguiente circuito inversor (4 Mosfets y 4 diodos) una de las referencias de la figura es falsa:
a) Los diodos permiten absorber la reacción inductiva de la carga durante la conmutación devolviendo energía a la fuente de CC.
b) La frecuencia del inversor está fijada por el circuito de control.
c) El transformador permite adaptar la tensión en la carga para elevar o reducir el valor de la tensión de la fuente de corriente
continua.
d) En operación normal se activan simultáneamente M1 y M2 en el otro semiciclo, se activan M3 y M4.

22) Si V1=120V, la corriente en la carga es 15A y la relación del transformación N1/N2=0,2 (suponiendo ideal el transformador)
¿cuáles serán los valores mínimos (sin factor de seguridad) de selección de los interruptores.
a) IMAX=3A , VDSO=120V ; b) IMAX=75A , VDSO=120V ; c) IMAX=75A , VDSO=240V

21) Dado el siguiente circuito inversor (4 Mosfets y 4 diodos) si la carga es inductiva, los diodos en antiparalelo están para:
a) Absorber la reacción inductiva de la carga durante la conmutación devolviendo energía a la fuente de CC.
b) Recircular la corriente residual a la carga.
c) Rectificar la corriente alterna producida por el ondulador.
d) Ninguna de las anteriores es correcta.

22) Si la corriente en la carga es 10 A y la relación del transformador N1/N2=0,2 la corriente en uno de los interruptores será
(suponiendo ideal al transformador)
a) 2A ; b) 50A ; c) 200ª

22) que método es mas conveniente para la eliminación de armonicos

a) PWM b)Mezclar transistores y tiristores; c) Filtros LC entre ond y carga

22) que función tienen los diodos en serie con los transistores en un inversor en fuente de intensidad
a) Mayor ángulo de disparo
b) Mantener constante la corriente;
c) Proteger al transistor contra tensiones inversas
d) todas

22) Para que se utilizan condensadores en paralelo en un inversor en funte de intensidad con transistores
a) Para disparar a los tiristores que van a conducir en el siguiente semiciclo
b) Para bloquear los tiristores hasta el momento de conduccion
c) Para ajustar la constante de tiempo de disparo de los transistores
d) todas

configuración pushpull, cuanto vale la tensión inversa sobre los transistores? 2.Vs
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 2N3055A MJ15015 MJ15016

200 2.8

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C
100 TJ = 150°C 2.4
70
hFE , DC CURRENT GAIN

50 2
-
55°C
30 1.6 IC = 1 A 4A 8A
20
VCE = 4.0 V 25°C 1.2
10
7 0.8
5
0.4
3
2 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)

Figure 2. DC Current Gain Figure 3. Collector Saturation Region

T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

3.5 10
TC = 25°C
3
5.0 MJ15016
2.5
V, VOLTAGE (VOLTS)

2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages Figure 5. Current–Gain — Bandwidth Product

10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+
30 V 3
2
t, TIME (s)

tr
µ

7.5 Ω
25 µs 1
+13 V SCOPE 0.7
30 Ω
0 0.5

1N6073 0.3
-11 V
0.2
tr, tf ≤ 10 ns td
-5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)

Figure 6. Switching Times Test Circuit Figure 7. Turn–On Time

(Circuit shown is for NPN)

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 2N3055A MJ15015 MJ15016

10 400
7 TJ = 25°C
5 2N3055A
3 200 Cib MJ15015

C, CAPACITANCE (pF)
2 ts MJ15016
t, TIME (s)
µ

tf
0.1 100
0.7
0.5 VCC = 30 50 Cob
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C 30
0.1 20
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Turn–Off Times Figure 9. Capacitances

COLLECTOR CUT–OFF REGION

NPN PNP
10,000 1000
VCE = 30 V VCE = 30 V
1000 100
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

µ

100 10 TJ = 150°C
TJ = 150°C
10 1.0
100°C 100°C
1.0 0.1 IC = ICES
IC = ICES
REVERSE FORWARD
REVERSE FORWARD
0.1 0.01 25°C
25°C
0.01 0.001
+
0.2 +
0.1 0 -
0.1 -
0.2 -
0.3 -
0.4 -
0.5 -
0.2 -
0.1 0 +
0.1 +
0.2 +
0.3 +
0.4 +
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 10. 2N3055A, MJ15015 Figure 11. MJ15016

20 20
30 µs 0.1ms
IC, COLLECTOR CURRENT (AMPS)

10
IC, COLLECTOR CURRENT (AMP)

10
100 µs 5.0
1 ms 1.0ms
5
2.0

100 ms 1.0 100ms

BONDING WIRE LIMIT BONDING WIRE LIMIT
2 THERMAL LIMIT @ TC = 25°C dc THERMAL LIMIT @ TC = 25°C
0.5
(SINGLE PULSE) (SINGLE PULSE)
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT dc
1 0.2
10 20 60 100 15 20 30 60 100 120
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area Figure 13. Forward Bias Safe Operating Area
2N3055A MJ15015, MJ15016

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 2N3055A MJ15015 MJ15016

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25
C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.

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 2N3055A MJ15015 MJ15016

PACKAGE DIMENSIONS

CASE 1–07
TO–204AA (TO–3)
ISSUE Z

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING
PLANE
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U
L –Y– B --- 1.050 --- 26.67
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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 2N3055A MJ15015 MJ15016

PowerBase is a trademark of Semiconductor Components Industries, LLC.

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