BUL45D2G

High Speed, High Gain

Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation www.onsemi.com
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POWER TRANSISTOR
The BUL45D2G is state−of−art High Speed High gain BiPolar 5.0 AMPERES,
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for 700 VOLTS, 75 WATTS
light ballast applications. Therefore, there is no need to guarantee an hFE
COLLECTOR
window. It’s characteristics make it also suitable for PFC application.
2, 4
Features
• Low Base Drive Requirement
• High Peak DC Current Gain 1
BASE
• Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode 3
EMITTER
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible 4
Parameter Spreads
• These Devices are Pb−Free and are RoHS Compliant*
TO−220
MAXIMUM RATINGS CASE 221A
STYLE 1
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage VCEO 400 Vdc
1
Collector−Base Breakdown Voltage VCBO 700 Vdc 2
3
Collector−Emitter Breakdown Voltage VCES 700 Vdc
Emitter−Base Voltage VEBO 12 Vdc MARKING DIAGRAM

Collector Current − Continuous IC 5 Adc

Collector Current − Peak (Note 1) ICM 10 Adc
Base Current − Continuous IB 2 Adc
BUL45D2G
Base Current − Peak (Note 1) IBM 4 Adc
AY WW
Total Device Dissipation PD
@ TC = 25_C 75 W
Derate above 25°C 0.6 W/_C
Operating and Storage Temperature TJ, Tstg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location
device. If any of these limits are exceeded, device functionality should not be Y = Year
assumed, damage may occur and reliability may be affected. WW = Work Week
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. G = Pb−Free Package

ORDERING INFORMATION
Device Package Shipping
*For additional information on our Pb−Free strategy and soldering details, please BUL45D2G TO−220 50 Units / Rail
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 8 BUL45D2/D
 BUL45D2G

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.65 _C/W
Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 100 mA, L = 25 mH) 400 450 −

Collector−Base Breakdown Voltage VCBO Vdc

(ICBO = 1 mA) 700 910 −

Emitter−Base Breakdown Voltage VEBO Vdc

(IEBO = 1 mA) 12 14.1 −

Collector Cutoff Current ICEO mAdc

(VCE = Rated VCEO, IB = 0) − − 100

Collector Cutoff Current ICES mAdc

(VCE = Rated VCES, VEB = 0)
@ TC = 25°C − − 100
@ TC = 125°C − − 500
(VCE = 500 V, VEB = 0)
@ TC = 125°C − − 100

Emitter−Cutoff Current IEBO mAdc

(VEB = 10 Vdc, IC = 0) − − 100

ON CHARACTERISTICS
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C − 0.8 1
@ TC = 125°C − 0.7 0.9
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C − 0.89 1
@ TC = 125°C − 0.79 0.9
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C − 0.28 0.4
@ TC = 125°C − 0.32 0.5
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C − 0.32 0.5
@ TC = 125°C − 0.38 0.6
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C − 0.46 0.75
@ TC = 125°C − 0.62 1

DC Current Gain hFE

−
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25°C 22 34 −
@ TC = 125°C 20 29 −
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C 10 14 −
@ TC = 125°C 7 9.5 −

DIODE CHARACTERISTICS
Forward Diode Voltage VEC V
(IEC = 1 Adc)
@ TC = 25°C − 1.04 1.5
@ TC = 125°C − 0.7 −
(IEC = 2 Adc)
@ TC = 25°C − 1.2 1.6
@ TC = 125°C − − −
(IEC = 0.4 Adc)
@ TC = 25°C − 0.85 1.2
@ TC = 125°C − 0.62 −

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 BUL45D2G

ELECTRICAL CHARACTERISTICS (continued) (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
DIODE CHARACTERISTICS
Forward Recovery Time (see Figure 27) Tfr ns
(IF = 1 Adc, di/dt = 10 A/ms)
@ TC = 25°C − 330 −
(IF = 2 Adc, di/dt = 10 A/ms)
@ TC = 25°C − 360 −
(IF = 0.4 Adc, di/dt = 10 A/ms)
@ TC = 25°C − 320 −

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth fT MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) − 13 −
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 1 MHz) − 50 75
Input Capacitance Cib pF
(VEB = 8 Vdc) − 340 500

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation IC = 1 A @ 1 ms @ TC = 25°C VCE(dsat) − 3.7 − V
Voltage: IB1 = 100 mA @ TC = 125°C − 9.4 −
Determined 1 ms and VCC = 300 V
3 ms respectively after @ 3 ms @ TC = 25°C − 0.35 − V
rising IB1 reaches @ TC = 125°C − 2.7 −
90% of final IB1
IC = 2 A @ 1 ms @ TC = 25°C − 3.9 − V
IB1 = 0.8 A @ TC = 125°C − 12 −
VCC = 300 V
@ 3 ms @ TC = 25°C − 0.4 − V
@ TC = 125°C − 1.5 −

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Turn−on Time IC = 2 Adc, IB1 = 0.4 Adc @ TC = 25°C ton − 90 150 ns
IB2 = 1 Adc @ TC = 125°C − 105 −
VCC = 300 Vdc
Turn−off Time @ TC = 25°C toff − 1.15 1.3 ms
@ TC = 125°C − 1.5 −
Turn−on Time IC = 2 Adc, IB1 = 0.4 Adc @ TC = 25°C ton − 90 150 ns
IB2 = 0.4 Adc @ TC = 125°C − 110 −
VCC = 300 Vdc
Turn−off Time @ TC = 25°C toff 2.1 − 2.4 ms
@ TC = 125°C − 3.1 −

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time IC = 1 Adc @ TC = 25°C tf − 90 150 ns
IB1 = 100 mAdc @ TC = 125°C − 93 −
IB2 = 500 mAdc
Storage Time @ TC = 25°C ts − 0.72 0.9 ms
@ TC = 125°C − 1.05 −
Crossover Time @ TC = 25°C tc − 95 150 ns
@ TC = 125°C − 95 −

Fall Time IC = 2 Adc @ TC = 25°C tf − 80 150 ns

IB1 = 0.4 Adc @ TC = 125°C − 105 −
IB2 = 0.4 Adc
Storage Time @ TC = 25°C ts 1.95 − 2.25 ms
@ TC = 125°C − 2.9 −
Crossover Time @ TC = 25°C tc − 225 300 ns
@ TC = 125°C − 450 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 BUL45D2G

TYPICAL STATIC CHARACTERISTICS

100 100
VCE = 1 V VCE = 5 V
80 TJ = 125°C 80 TJ = 125°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 25°C TJ = 25°C
60 60

40 TJ = -20°C 40 TJ = -20°C

20 20

0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt

4 10
TJ = 25°C
IC/IB = 5
TJ = 25°C
3
VCE , VOLTAGE (VOLTS)

VCE , VOLTAGE (VOLTS)

2 1
TJ = 125°C
5A
1 3A
2A 4A
1A TJ = -20°C
IC = 500 mA
0 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

10 10
IC/IB = 10 IC/IB = 20
VCE , VOLTAGE (VOLTS)

VCE , VOLTAGE (VOLTS)

1 1

TJ = 25°C TJ = 125°C
TJ = -20°C TJ = -20°C
TJ = 125°C
TJ = 25°C
0.1 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage

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 BUL45D2G

TYPICAL STATIC CHARACTERISTICS

10 10

IC/IB = 5 IC/IB = 10
VBE , VOLTAGE (VOLTS)

VBE , VOLTAGE (VOLTS)

TJ = 25°C
1 TJ = -20°C 1 TJ = -20°C

TJ = 125°C
TJ = 125°C
TJ = 25°C

0.1 0.1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base−Emitter Saturation Region Figure 8. Base−Emitter Saturation Region

10 10

IC/IB = 20
FORWARD DIODE VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)

1 25°C
1 TJ = -20°C
125°C
TJ = 125°C
TJ = 25°C

0.1 0.1
0.001 0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) REVERSE EMITTER-COLLECTOR CURRENT (AMPS)

Figure 9. Base−Emitter Saturation Region Figure 10. Forward Diode Voltage

1000 1000
Cib (pF) TJ = 25°C TJ = 25°C
f(test) = 1 MHz 900 BVCER @ 10 mA

100 800
BVCER (VOLTS)

Cob (pF)
700

10 600
BVCER(sus) @ 200 mA
500

1 400
1 10 100 10 100 1000
VR, REVERSE VOLTAGE (VOLTS) RBE (W)

Figure 11. Capacitance Figure 12. BVCER = f(ICER)

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 BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

1000 5
IBon = IBoff TJ = 125°C IBon = IBoff
VCC = 300 V TJ = 25°C IC/IB = 10 VCC = 300 V
4
800 PW = 20 ms PW = 20 ms

t, TIME (s)
600 3
t, TIME (ns)

μ
IC/IB = 10
400 2

IC/IB = 5
IC/IB = 5
200 1 TJ = 125°C
TJ = 25°C

0 0
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 13. Resistive Switch Time, ton Figure 14. Resistive Switch Time, toff

4 5
IBon = IBoff IBon = IBoff
IC/IB = 5 VCC = 15 V
VCC = 15 V
4 VZ = 300 V
VZ = 300 V
3 LC = 200 mH
LC = 200 mH
t, TIME (s)

3
t, TIME (s)

μ
μ

2
2

1 1
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

0 0
0 1 2 3 4 0 1 2 3 4
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time, Figure 16. Inductive Storage Time,
tsi @ IC/IB = 5 tsi @ IC/IB = 10

600 400
IBon = IBoff TJ = 125°C IBoff = IBon
500 VCC = 15 V TJ = 25°C VCC = 15 V
VZ = 300 V VZ = 300 V
LC = 200 mH tc 300
400 LC = 200 mH
t, TIME (ns)

t, TIME (ns)

300 200

200
100
100 TJ = 125°C
tfi TJ = 25°C
0 0
0 1 2 3 4 0 1 2 3
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 4

Figure 17. Inductive Switching, Figure 18. Inductive Switching,

tc & tfi @ IC/IB = 5 tfi @ IC/IB = 10

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 BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

1500 5
TJ = 125°C IBon = IBoff
IBoff = IBon TJ = 125°C
TJ = 25°C VCC = 15 V
VCC = 15 V TJ = 25°C
VZ = 300 V
VZ = 300 V IC = 1 A

t si , STORAGE TIME (μs)

LC = 200 mH
1000 LC = 200 mH 4
t, TIME (ns)

500 3

IC = 2 A

0 2
0 1 2 3 4 0 5 10 15 20
IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN

Figure 19. Inductive Switching, Figure 20. Inductive Storage Time

tc @ IC/IB = 10

450 1400
IBoff = IBon TJ = 125°C IBon = IBoff TJ = 125°C
VCC = 15 V 1200
TJ = 25°C VCC = 15 V TJ = 25°C
VZ = 300 V
t c , CROSSOVER TIME (ns)

350 IC = 1 A VZ = 300 V
LC = 200 mH 1000
LC = 200 mH
t fi , FALL TIME (ns)

IC = 2 A
800
250
600

400
150

IC = 2 A 200
IC = 1 A
50 0
2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20
hFE, FORCED GAIN hFE, FORCED GAIN

Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time

3000 360
IB1 = IB2 IBon = IBoff
t fr , FORWARD RECOVERY TIME (ns)

VCC = 15 V dI/dt = 10 A/ms

VZ = 300 V TC = 25°C
LC = 200 mH
2000 340
t, TIME (ns)

IB = 50 mA

IB = 100 mA
1000 320
IB = 200 mA
IB = 500 mA
IB = 1 A
0 300
0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2
IC, COLLECTOR CURRENT (AMPS) IF, FORWARD CURRENT (AMP)

Figure 23. Inductive Storage Time, tsi Figure 24. Forward Recovery Time tfr

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 BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

VCE
dyn 1 ms

dyn 3 ms

0V

90% IB
1 ms
IB
3 ms

TIME

Figure 25. Dynamic Saturation

Voltage Measurements

10
9 IC 90% IC
8 tfi
tsi
7
6
10% IC
5 Vclamp 10% Vclamp
tc
4
3 IB 90% IB1
2
1
0
0 1 2 3 4 5 6 7 8
TIME

Figure 26. Inductive Switching Measurements

VFRM VFR (1.1 VF unless

otherwise specified)

VF VF
tfr
0.1 VF
0

IF
10% IF

0 2 4 6 8 10

Figure 27. tfr Measurements

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 BUL45D2G

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

+15 V
IC PEAK
1 mF 100 W MTP8P10 100 mF
150 W
3W 3W VCE PEAK

MTP8P10 VCE
MPF930 RB1
MUR105 IB1
+10 V MPF930 Iout IB
A
IB2
50 RB2
W MJE210
COMMON MTP12N10
150 W V(BR)CEO(sus) Inductive Switching RBSOA
500 mF 3W L = 10 mH L = 200 mH L = 500 mH
RB2 = ∞ RB2 = 0 RB2 = 0
1 mF VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts
IC(pk) = 100 mA RB1 selected for RB1 selected for
-Voff desired IB1 desired IB1

TYPICAL CHARACTERISTICS

100 6
TC ≤ 125°C
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

5 GAIN ≥ 5
10 1 ms LC = 2 mH
10 ms 4
EXTENDED SOA

5 ms 1 ms
1 3

DC
2
-5 V
0.1
1 0V -1.5 V
0.01 0
10 100 1000 200 300 400 500 600 700 800
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area

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 BUL45D2G

TYPICAL CHARACTERISTICS

SECOND BREAKDOWN
0.8 DERATING

POWER DERATING FACTOR

0.6
THERMAL DERATING
0.4

0.2

0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of Figure 28 may be found at any case temperature by using the
a transistor: average junction temperature and second appropriate curve on Figure 30.
breakdown. Safe operating area curves indicate IC −VCE TJ(pk) may be calculated from the data in Figure 31. At any
limits of the transistor that must be observed for reliable case temperatures, thermal limitations will reduce the power
operation; i.e., the transistor must not be subjected to greater that can be handled to values less than the limitations
dissipation than the curves indicate. The data of Figure 28 is imposed by second breakdown. For inductive loads, high
based on TC = 25°C; TJ(pk) is variable depending on power voltage and current must be sustained simultaneously during
level. Second breakdown pulse limits are valid for duty turn−off with the base to emitter junction reverse biased. The
cycles to 10% but must be derated when TC > 25°C. Second safe level is specified as a reverse biased safe operating area
breakdown limitations do not derate the same as thermal (Figure 29). This rating is verified under clamped conditions
limitations. Allowable current at the voltages shown on so that the device is never subjected to an avalanche mode.

TYPICAL THERMAL RESPONSE

1
r(t), TRANSIENT THERMAL RESISTANCE

0.5

0.2
(NORMALIZED)

0.1
P(pk) RqJC(t) = r(t) RqJC
0.1 0.05 RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
0.02 t1 PULSE TRAIN SHOWN
t2 READ TIME AT t1
SINGLE PULSE
DUTY CYCLE, D = t1/t2 TJ(pk) - TC = P(pk) RqJC(t)

0.01
0.01 0.1 1 10 100 1000
t, TIME (ms)

Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2

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 BUL45D2G

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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