IJIRST –International Journal for Innovative Research in Science & Technology| Volume 2 | Issue 09 | February 2016

ISSN (online): 2349-6010

A V-band Waveguide to Microstrip Probe

Transition
Kinjal Parmar Mr. A. K. Sisodia
P.G student Assistant Professor
L.J.I.E.T, Ahmedabad L.J.I.E.T, Ahmedabad

Abstract
A wideband, low loss probe transition from rectangular waveguide to microstrip is presented. This transition efficiently couples
energy from a microstrip line to a TE10 waveguide. This structure requires no mechanical pressure for electrical contact between
the microstrip probe and the waveguide because the main planar circuitry and waveguide sections are placed on a single housing.
This waveguide to microstrip probe transition is designed, simulated and optimized on alumina substrate. Optimization of the
designed transition is carried out using 3-D finite element method solver HFSS by Ansoft Corporation. The simulated result has
return loss better than 15 dB and insertion loss is less than 0.32 dB over 45-65 GHz frequency range.
Keywords: Waveguide, Microstrip, Probe, Transition, V-band
_______________________________________________________________________________________________________

I. INTRODUCTION
Waveguide to microstrip transitions are widely used in microwave and millimeter-wave systems. Since the system input and
output ports are typically waveguide, particularly at millimeter-wave frequencies, and the internal components are MMIC i.e.
microstrip based, waveguide to microstrip transitions are an important system component often setting or at least affecting the
system noise figure, output power, bandwidth and efficiency. Thus key performance requirements for the transition are low loss,
broad bandwidth, and a configuration which interfaces easily with both microstrip and waveguide.
One of the most popular waveguide to microstrip transitions for higher frequency applications is the E-plane probe [1], [2]. E-
plane probe transitions from waveguide to microstrip have been successfully applied to applications operating through W-band
frequencies [3]. However, the transition configuration, which requires perpendicular input and output ports, limits the
mechanical configuration or at the very least requires additional waveguides bends if probe configuration is desired. Meanwhile,
there are still requirements for improved probe transitions. While the probe transition introduced in [4] is applicable and cost
effective for millimeter-wave applications, its disadvantage is that mechanical pressure or contact is required to complete the
electrical connection between waveguide and the microstrip line. This may not be suitable for applications where fragile
substrates such as fused-silica are desired. Furthermore, in at least one case unexpected losses were encountered due to higher
mode excitations [5]. Other probe configurations [6], [7] show relatively narrow band or higher insertion loss. In this paper we
present a new broadband probe transition operating at V-band frequencies.

II. DESIGN APPROACH

The HFSS model of back to back waveguide to microstrip probe transition is shown in Fig.1 and Fig.2. It consists of Waveguide
WR-15, Microstrip line, Probe, Inductive line, Quarter wave transformer. This transition is designed, simulated and optimized on
Alumina substrate which has dielectric permittivity 9.8 and loss tangent 0.0008. Probe couples the maximum energy from
waveguide to microstrip line. Probe is followed by high impedance inductive line in series to remove capacitive reactance. This
high impedance inductive line is followed by a quarter-wave impedance transformer to match the real part of the probe
impedance to 50 ohms microstrip line. A high impedance inductive line and a quarter-wave impedance transformer are used to
achieve broadband matching of the probe impedance.

Fig. 1: HFSS Model of Back to Back Waveguide to Microstrip Probe Transition

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 A V-band Waveguide to Microstrip Probe Transition
(IJIRST/ Volume 2 / Issue 09/ 031)

Fig. 2: Structure of Back to Back Waveguide to Microstrip Probe Transition

The design parameters of waveguide to microstrip probe transition are optimized to improve the transmission and return loss.
Optimized dimensions of this waveguide to microstrip probe transition are given in Table.1.
Table - 1
Optimized dimension of waveguide to microstrip probe transition
Parameter Dimension
Waveguide length 15 mm
Waveguide width 1.9 mm
Waveguide height 3.9 mm
Substrate width 1.2 mm
Substrate thickness 0.254 mm
Substrate permittivity 9.8
Substrate loss tangent 0.0008
Probe length 0.876 mm
Probe width 0.465 mm
Probe thickness 0.008 mm
Inductive line length 0.150 mm
Inductive line width 0.130 mm
λ /4 Transformer length 0.491 mm
λ /4 Transformer width 0.373 mm
50 Ω line length 1.5 mm
50 Ω line width 0.25mm
λ g/4 1.38 mm

III. PERFORMANCE CHARACTERISTICS

This waveguide to microstrip probe transition is designed and simulated with Ansoft HFSS tool, a commercial 3D-
electromagnetic simulator based on a finite element method. The design parameters are optimized to improve performance
characteristics of transition over the operating frequency band. The simulated results of probe transition are presented in Fig. 3
and Fig. 4. This simulated probe transition has return loss better than 15 dB and insertion loss less than 0.32 dB for back to back
design over 45-65 GHz frequency range.

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 A V-band Waveguide to Microstrip Probe Transition
(IJIRST/ Volume 2 / Issue 09/ 031)

Fig. 3: Return loss of waveguide to microstrip transition for back to back design

Fig. 4: Insertion loss of waveguide to microstrip transition for back to back design

IV. CONCLUSION
A compact and low loss waveguide to microstrip probe transition is demonstrated efficiently at V-band frequencies. The
waveguide and the planar circuit are fully integrated on the same housing, which provides easy installation and mechanical
stability. This waveguide to microstrip probe transition design provides a practical solution for integration of planar circuits with
millimeter-wave antenna.

REFERENCES
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[2] Y. C. Leong and S. Weinreb, “Full band waveguide-to-microstrip probe transitions,” 1999 IEEE MTT-S Int. Microwave Symp. Dig., vol. 4, pp. 1435-1438,
June 1999.
[3] J. Schellenberg, E. Watkins, M. Micovic, B. Kim and K. Han, “W-band, 5W Solid-State Power Amplifier/Combiner,” 2010 IEEE MTT-S Int. Microwave
Symp. Dig., pp. 240-243, May 2010.
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[6] Donadio, O., K. Elgaid, and R. Appleby. "Waveguide-to-microstrip transition at G-band using elevated E-plane probe." Electronics letters 47, no. 2 (2011):
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[7] Artemenko, A., A. Maltsev, R. Maslennikov, A. Sevastyanov, and V. Ssorin. "Design of wideband waveguide to microstrip transition for 60 GHz
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