PJD15N06L

60V N-Channel Enhancement Mode MOSFET

TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@10A=40mΩ
• RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request

MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 15N06L Drain

Gate

Source

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA M E TE R S ym b o l Li mi t U ni t s

D r a i n- S o ur c e Vo l t a g e V DS 60 V

G a t e - S o ur c e Vo l t a g e V GS +20 V

C o nt i nuo us D r a i n C ur r e nt ID 15 A

1)
P ul s e d D r a i n C ur r e nt ID M 60 A

T A = 2 5 OC 38
M a xi m um P o w e r D i s s i p a t i o n PD W
T A = 7 5 OC 22

O
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T J , T S TG -5 5 to + 1 5 0 C

Avalanche Energy with Single Pulse

E AS 120 mJ
ID=21A, VDD=30V, L=0.5mH

O
Junction-to-Case Thermal Resistance RθJC 3 .3 C /W

Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 50 O

C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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 PJD15N06L
ELECTRICALCHARACTERISTICS

P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s

S ta ti c

D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 60 - - V

G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V

D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=8.0A - 36 50
mΩ
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=10A - 32 40

Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA

Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA

Forward Transconductance g fS V D S = 1 0 V , ID = 1 0 A 20 - - S

D ynami c

V D S = 3 0 V , ID = 1 0 A , V G S = 5 V - 1 7 .2 0 -
To t a l G a t e C h a r g e Qg
- 3 2 .5 -
nC
V D S = 3 0 V , ID = 1 0 A
G a t e - S o ur c e C ha r g e Qgs - 3 .6 -
V GS = 1 0 V

G a t e - D r a i n C ha r g e Qgd - 5 .4 -

Tu r n - O n D e l a y Ti m e T d ( o n) - 13.2 16.5

Tu r n - O n R i s e Ti m e t rr VDD=30V , RL=30Ω - 5.8 7.6

ID=1A , VGEN=10V ns
Tu r n - O f f D e l a y Ti m e t d (o ff) RG=3.6Ω - 42 55

Tu r n - O f f F a l l Ti m e tf - 6 .2 7 .8

In p u t C a p a c i t a n c e C iss - 1750 -

V D S = 2 5 V , V GS = 0 V
O ut p ut C a p a c i t a nc e C oss - 130 - pF
f=1 .0 MHZ

R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 80 -

S o ur c e - D r a i n D i o d e

M a x. D i o d e F o r w a r d C ur r e nt Is - - - 10 A

D i o d e F o rwa rd Vo lta g e V SD IS = 1 0 A , V G S = 0 V - 0 .9 1 .2 V

Switching V DD Gate Charge V DD

Test Circuit Test Circuit
V IN RL V GS RL

V OUT

1mA
RG

RG

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 PJD15N06L
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)

50 50
ID - Drain-to-Source Current (A)

VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V V DS=10V

ID - Drain Source Current (A)

40 40

3.5V
30 30

3.0V
20 20
T J=125 OC T J=-55 OC
10 2.5V 10
T J=25 OC
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 5.5

VDS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD

FIG.1- Output CHARACTERISTIC
Characteristic FIG.2- Transfer Characteristic

80 120
ID =10A
R DS(ON) - On-Resistance (m W )
R DS(ON) - On-Resistance (m W )

70
100
60

50
V GS=4.5V 80
40 T J125
=125C C
o O

60
30 V GS=10V
20
40
10
T
TJJ =25
=25oOCC
0 20
0 10 20 30 40 50 2 4 6 8 10

ID - Drain Current (A) VGS - Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage

1.9
RDS(ON) - On-Resistance(Normalized)

V GS=10V
1.7 I D=10A
1.5

1.3

1.1

0.9

0.7

0.5
-50 -25 0 25 50 75 100 125 150

T J - Junction Temperature (oC)

FIG.5- On Resistance vs Junction Temperature

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 PJD15N06L

10

VGS - Gate-to-Source Voltage (V)

V DS =30V
Vgs I D =10A
Qg 8

Vgs(th) Qsw
0
Qg(th) 0 5 10 15 20 25 30 35

Qgs Qgd Qg Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform Fig.7 - Gate Charge

Vth - G-S Threshold Voltage (NORMALIZED)

1.3 73
I D =250uA BVDSS - Breakdown Voltage (V)
I D =250uA
1.2 71

1.1 69

1 67

0.9 65

0.8 63

0.7 61

0.6 59
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (o C) TJ - Junction Temperature ( C) o

Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature

100
V GS =0V
IS - Source Current (A)

10

T J =125 OC T J =25 OC
1

T J =-55 OC

0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VSD - Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

LEGALSTATEMENT

Copyright PanJit International, Inc 2006

The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.

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