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EE0015 Module 10 FET DC Biasing
EE0015 Module 10 FET DC Biasing
Drain
+
Gate
VDD
–
– Source
VGG
+
ID
Ohmic region
B C
IDSS VGS = 0
Breakdown
Active region
A (constant current)
VDS
0 VP
(pinch-off voltage)
ID
IDSS VGS = 0
VGS = –1 V
VGS = –2 V
VGS = –3 V
VGS = – 4 V
VGS = VGS(of f) = –5 V
VDS
VP = +5 V
ID
2 IDSS
VGS
I D I DSS 1
V
GS(off)
IDSS
2
IDSS
4
–VGS
VGS(off) 0.3 VGS(off) 0
0.5 VGS(off)
I D
gm ID
VGS
IDSS
VGS
g m g m0 1
V
GS(off) ID
VGS
2 I DSS
gm0
VGS(off) –VGS
VGS(off) 0
VGS
RIN
I GSS
≈