

EMX1FHA    /

/ UMX1NFHA IMX1


   AEC-Q101 Qualified

 
  
EMX1FHA  
/ UMX1NFHA / IMX1

     

  
2SC2412KFRA        
 EMX1FHA
EMX1

         (3)

0.5 0.5
(4)

0.22

1.0
1.6
(5) (2)

   (6)

1.2
1.6
(1)

     

0.13

0.5
 Each lead has same dimensions

          ROHM : EMT6

Abbreviated symbol : X1

UMX1NFHA
UMX1N


0.65
(3)
(4)

1.3
2.0
   0.2

(2)
(5)
(6)

0.65
(1)
   1.25

2.1
0.15

0.9
0.7
0.1Min.
0to0.1

  Each lead has same dimensions

ROHM : UMT6
EMX1FHA / UMX1NFHA
EMX1 / UMX1N IMX1 IMX1 EIAJ : SC-88
(3) (2) (1) (4) (5) (6) Abbreviated symbol : X1

Tr1 Tr1 IMX1

IMX1
Tr2 Tr2
0.95 0.95
(6)

(1)
0.3

2.9
1.9

(4) (5) (6) (3) (2) (1)

(2)
(5)
(4)

(3)

1.6

2.8
0.15

1.1
0.8

        

0to0.1

0.3to0.6
Each lead has same dimensions

ROHM : SMT6
EIAJ : SC-74

     ° Abbreviated symbol : X1

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
Collector current IC 150 mA
Power EMX1, ,UMX1NFHA
EMX1FHA UMX1N 150 (TOTAL) ∗1
dissipation IMX1 PC mW
IMX1 300 (TOTAL) ∗2
Junction temperature Tj 150 ˚C
Storage temperature Tstg −55∼+150 ˚C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.


 
EMX1FHA    /
/ UMX1NFHA IMX1


    °

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA
Collector cutoff current ICBO − − 0.1 µA VCB=60V
Emitter cutoff current IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA
Transition frequency fT − 180 − MHz VCE=12V, IE=−2mA, f=100MHz ∗
Output capacitance Cob − 2 3.5 PF VCB=12V, IE=0A, f=1MHz

 
Package Taping
Code T2R TN T110
Basic ordering
Type unit (pieces) 8000 3000 3000

EMX1FHA
EMX1
UMX1NFHA
UMX1N
IMX1
IMX1

  

50 0.50mA 10
100 30µA
VCE=6V Ta=25˚C mA Ta=25˚C
0.45mA
COLLECTOR CURRENT : IC (mA)

0.40 27µA
COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

20
0.35mA 8 24µA
80
10 0.30mA 21µA
5 0.25mA
60 6 18µA
Ta=100˚C
25˚C
−55˚C

0.20mA 15µA
2
0.15mA 4 12µA
1 40
9µA
0.10mA
0.5 6µA
20 2
0.05mA
0.2 3µA

0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( I ) characteristics ( II )


 
EMX1FHA    /
/ UMX1NFHA IMX1


500 500

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

Ta=25˚C VCE=5V 0.5 Ta=25˚C
Ta=100˚C

25˚C

DC CURRENT GAIN : hFE

VCE=5V
DC CURRENT GAIN : hFE

200 200 0.2

3V −55˚C
1V
100 100 0.1
IC/IB=50

50 50 0.05 20
10

20 20 0.02

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. collector Fig.6 Collector-emitter saturation
current ( I ) current ( II ) voltage vs. collector current

0.5
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

0.5
0.5 IC/IB=10 IC/IB=50
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

Ta=25˚C

0.2 Ta=100˚C
0.2 0.2
25˚C
IC/IB=50 Ta=100˚C −55˚C
20 0.1 0.1
0.1 25˚C
10 −55˚C
0.05 0.05
0.05

0.02
0.02 0.02

0.01 0.01
0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)

Fig.8 Collector-emitter saturation Fig.9 Collector-emitter saturation

Fig.7 Collector-emitter saturation
voltage vs. collector current ( II ) voltage vs. collector current ( III )
voltage vs. collector current ( I )

20
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)

Ta=25˚C Ta=25˚C
: Cib (pF)

Ta=25˚C
TRANSITION FREQUENCY : fT (MHz)

VCE=6V f=32MHZ
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

500 f=1MHz 200

VCB=6V
IE=0A
10 Cib IC=0A
100

5
EMITTER INPUT CAPACITANCE

200
50

100 2 20
Co
b

1 10
50
−0.5 −1 −2 −5 −10 −20 −50 −100 0.2 0.5 1 2 5 10 20 50 −0.2 −0.5 −1 −2 −5 −10

EMITTER CURRENT : IE (mA) EMITTER CURRENT : IE (mA)

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Gain bandwidth product vs. Fig.11 Collector output capacitance vs. Fig.12 Base-collector time constant vs.
emitter current collector-base voltage emitter current
Emitter input capacitance vs.
emitter-base voltage


Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0