CM1400DU-24NF

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Mega Power
Dual IGBTMOD™
1400 Amperes/1200 Volts

TC MEASURED POINTS
(THE SIDE OF Cu BASEPLATE)
P A
D
(8 PLACES) G L
U H H W K

C2E1

C2 C1 X J F
S
G2 E1
Y CB E
E2 G1 Z

T Description:
J F Powerex IGBTMOD™ Modules are
E2
designed for use in switching two
C1
IGBT applications. Each
U
AA module consists of a half-bridge
V H H H H H H L configuration, with each transistor
G G R (9 PLACES) M having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
LABEL connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
G2 thermal management.
C2
E2 Features:
C2E1 £ Low Drive Power
E2 C1
C1
£ Low VCE(sat)
E1 £ Discrete Super-Fast Recovery
G1 Free-Wheel Diode
Outline Drawing and Circuit Diagram £ Isolated Baseplate for Easy
Heat Sinking
Dimensions Inches Millimeters Dimensions Inches Millimeters
Applications:
A 5.91 150.0 L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
£ High Power UPS
B 5.10 129.5 M 0.075±0.08 1.9±0.2
£ Large Motor Drives
C 1.67±0.01 42.5±0.25 P 0.26 6.5
£ Utility Interface Inverters
D 5.41±0.01 137.5±0.25 R M6 Metric M6
U 0.62 15.7
Ordering Information:
E 6.54 166.0
Example: Select the complete
F 2.91±0.01 74.0±0.25 V 0.71 18.0
module number you desire from
G 1.65 42.0 W 0.75 19.0 the table - i.e. CM1400DU-24NF
H 0.55 14.0 X 0.43 11.0 is a 1200V (VCES), 1400 Ampere
J 1.50±0.01 38.0±0.25 Y 0.83 21.0 Dual IGBTMOD Power Module.
K 0.16 4.0 Z 0.41 10.5 Current Rating VCES
Housing Type (J.S.T. MFG. CO. LTD) AA 0.22 5.5 Type Amperes Volts (x 50)
S = VHR-2N CM 1400 24
T = VHR-5N

4/12 Rev. 3 1
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts

Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol Ratings Units
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current DC (TC' = 94°C)*5 IC 1400 Amperes
Peak Collector Current (Pulse)*2 ICM 2800 Amperes
Emitter Current (TC = 25°C) IE*1 1400 Amperes
Peak Emitter Current (Pulse)*2 IEM*1 2800 Amperes
Maximum Collector Dissipation (TC = 25°C) PC*3 3900 Watts
Junction Temperature Tj -40 to 150 °C
Storage Temperature*4 Tstg -40 to 125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.) Viso 2500 Volts
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Terminal Screw – 40 in-lb
Weight (Typical) – 1400 Grams

Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 140mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES ±VGE = VGES, VCE = 0V – – 1.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C*4 – 1.8 2.5 Volts
(Without Lead Resistance) (Chip) IC = 1400A, VGE = 15V, Tj = 125°C*4 – 2.0 – Volts
Module Lead Resistance R(lead) IC = 1400A, Terminal-Chip – 0.286 – mΩ
Input Capacitance Cies – – 220 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 25 nF
Reverse Transfer Capacitance Cres – – 4.7 nF
Total Gate Charge QG VCC = 600V, IC = 1400A, VGE = 15V – 7200 – nC
Turn-on Delay Time td(on) – – 800 ns
Turn-on Rise Time tr VCC = 600V, IC = 1400A, – – 300 ns
Turn-off Delay Time td(off) VGE = ±15V, – – 1000 ns
Turn-off Fall Time tf RG = 0.22Ω, Inductive Load, – – 300 ns
Reverse Recovery Time trr*1 IE = 1400A – – 700 ns
Reverse Recovery Charge Qrr*1 – 90 – µC
Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V – – 3.2 Volts
(Without Lead Resistance) (Chip)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*8 The operation temperature is restrained by the permission temperature of female connector.

2 4/12 Rev.3
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*7 Rth(j-c)Q IGBT Part (1/2 Module) – – 0.032 K/W
Thermal Resistance, Junction to Case*7 Rth(j-c)D FWDi Part (1/2 Module) – – 0.053 K/W
Contact Thermal Resistance*6 Rth(c-f) Case to Heatsink, – 0.016 – K/W
Thermal Grease Applied (1/2 Module)
Thermal Resistance, Junction to Case*5 Rth(j-c')Q Per IGBT Part, – – 0.014 K/W
TC Reference Point Under the Chips
Thermal Resistance, Junction to Case*5 Rth(j-c')D Per FWDi Part, – – 0.023 K/W
TC Reference Point Under the Chips
External Gate Resistance RG 0.22 – 2.2 Ω
*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Case temperature (TC) measured point is shown in the device dtawing.

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
2800 2800 5
VGE = 20V Tj = 25°C VCE = 10V VGE = 15V
15

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

2400 2400 Tj = 25°C Tj = 25°C

13 4
12 Tj = 125°C Tj = 125°C
2000 2000
COLLECTOR-EMITTER

1600 1600 3
11
1200 1200 2

800 800
10
1
400 400
8 9
0 0 0
0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 0 400 600 1200 1600 2000 2400 2800
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 104 103
Tj = 25°C VGE = 0V
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8 Cies
COLLECTOR-EMITTER

102
6
103
IC = 1400A
Coes
4
IC = 560A 101
IC = 2800A

2 Cres
Tj = 25°C
Tj = 125°C
0 102 100
0 4 8 12 16 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

4/12 Rev. 3 3
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
104 103 103 20

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

IC = 1400A
Irr

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

REVERSE RECOVERY TIME, trr, (ns)
16
trr VCC = 400V
td(off)
SWITCHING TIME, (ns)

103
td(on) 12 VCC = 600V
102 102
tf
tr 8
102 VCC = 600V VCC = 600V
VGE = 15V VGE = 15V
RG = 0.22Ω RG = 0.22Ω 4
Tj = 125°C Tj = 125°C
Inductive Load Inductive Load
101 101 101 0
102 103 104 102 103 104 0 2000 4000 6000 8000 10000
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

TRANSIENT THERMAL REVERSE RECOVERY ENERGY VS.

IMPEDANCE CHARACTERISTICS SWITCHING LOSS VS. COLLECTOR CURRENT EMITTER CURRENT
(IGBT & FWDi) (TYPICAL) (TYPICAL)
10-3 10-2 10-1 100 101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

101 103 103

REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)

SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)

Per Unit Base VCC = 600V

Rth(j-c') = 0.014 K/W (IGBT) VGE = 15V
Rth(j-c') = 0.023 K/W (FWDi) Tj = 125°C
Zth = Rth • (NORMALIZED VALUE)

100 RG = 0.22Ω
Inductive Load
102 102

10-1
VCC = 600V
101 VGE = 15V 101
Tj = 125°C
10-2
RG = 0.22Ω
ESW(on)
Single Pulse
ESW(off)
TC = 25°C Inductive Load
10-3 100 100
10-5 10-4 10-3 102 103 104 102 103 104
TIME, (s) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES)

SWITCHING ENERGY VS. REVERSE RECOVERY ENERGY VS.

EXTERNAL GATE RESISTANCE EXTERNAL GATE RESISTANCE
(TYPICAL) (TYPICAL)
103 103
REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)

102 102
VCC = 600V
VGE = 15V
Tj = 125°C VCC = 600V
IC = 1400A VGE = 15V
ESW(on) Tj = 125°C
ESW(off) IC = 1400A
Inductive Load Inductive Load
101 101
0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5
EXTERNAL GATE RESISTANCE, RG, (Ω) EXTERNAL GATE RESISTANCE, RG, (Ω)

4 4/12 Rev.3