International Journal of Applied Nanotechnology

ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

Studies on the Electrical Characteristics of Single-Heterojunction

GaN based HEMTs with AlGaN Nano-Layer of 21 nm
Avrajyoti Dutta1, Sanjib Kalita2, Subhadeep Mukhopadhyay3,*
Department of Electronics and Communication Engineering, National Institute of
Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India

ABSTRACT
In this work, we have studied the electrical characteristics of single-heterojunction
AlGaN/GaN high electron mobility transistors (HEMTs). The effects of drain voltage and
gate voltage on variations of drain current have studied on the basis of simulated HEMT
structures. Also, we have studied the effects of aluminium mole fraction, gate length and
doping concentration on variations of drain current based on the simulated HEMT
structures. This present work will be helpful to fabricate the AlGaN/GaN HEMTs
experimentally for applications in sensor technology.

Keywords: drain voltage, gate voltage, mole fraction, gate length, drain current

*Corresponding Author
E-mail: subhadeepmukhopadhyay21@gmail.com

INTRODUCTION electron gas) charge density, surface

Brown has furnished the experimental
aspects of novel AlGaN/GaN based single-
heterojunction high electron mobility
transistors (HEMTs) as enhancement
mode transistor with sub-critical barrier
thickness [1]. Recently, few authors have
reported the analytical model for current-
voltage characteristics of AlGaN/GaN
HEMTs mentioning the effect of gate
length [2]. Mukhopadhyay has explained
the extensive simulation studies on
microelectronic and Nanoelectronic GaN
based HEMTs in earlier reports [3, 4].
Chattopadhyay has described the thermal
models for analytical studies on
AlGaN/GaN HEMTs involving the self-
heating effect and non-linear polarisation
towards the microwave frequency
applications [5–8]. Few authors have
described the physics based analytical
models on 2DEG (two dimensional
potential, capacitances, and thermal noise
for applications in integrated circuit (IC)
design and switching behaviour [9–19].
According to the published reports,
HEMTs are useful in sensor fabrication
[20, 21].
In this work, we have studied the effect of
drain voltage on drain current in single-
heterojunction AlGaN/GaN HEMTs as
simulated structures. Also, we have
studied the effect of gate voltage on drain
current. Next, we have studied the effect of
aluminium mole fraction on drain current
in simulated structures. Also, we have
studied the effect of AlGaN doping
concentration on drain current. Finally, we
have studied the effect of gate length on
drain current in simulated structures. This
work will be useful to fabricate the sensors
using GaN based HEMTs.

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 26

Studies on the Electrical Characteristics of Single-Heterojunction Dutta et al.

DESIGNS OF DEVICES RESULTS AND DISCUSSION

The cross-sectional dimensions of
different portions of the designed
Nanoelectronic HEMT structures are as
follows: (A) source dimensions are 250
nm (length)×40 nm (height); (B) drain
dimensions are 250 nm (length)×40 nm
(height); (C) gate dimensions are Lg
(length)×50 nm (height); (D) total length
of the device is 1750 nm; (E) AlGaN
thickness (T) is 21 nm; (F) GaN thickness
is 60 nm; (G) sapphire thickness is 100
nm; and (H) source to gate fixed distance
is 250 nm (Figure 1). The selected values of
gate length (Lg) are 0.24, 0.48 and 0.74
micron (Figure 1). The source to gate
distance is fixed (250 nm) with the variation
in gate length, but the gate to drain distance
is variable (Figure 1). The selected values
of aluminium mole fractions in AlGaN
nano-layer are 0.15, 0.20, 0.25, and 0.30.
The selected values of AlGaN doping
concentrations are 1×1018 cm-3, 2×1018 cm-
3
and 3×1018 cm-3. In all simulated
structures of this work, AlGaN thickness
(T) is fixed as 21 nm (Figure 1).
In Figure 2, the drain current is higher at
higher drain voltage at the gate voltage
(Vg) of 0 volt, having gate length (Lg) of
0.24-micron, aluminium mole fraction (x)
of 0.15 and doping concentration 3×1018
cm-3. According to the Figure 2, the drain
current is higher at higher gate voltage
(Vg) at any particular drain voltage [3, 4].
In Figures 3–5, similar effects of drain
voltage and gate voltage on drain current
are observed in the simulated structures
having aluminium mole fraction (x) of
0.25 and gate length (Lg) of 0.24. In
Figures 6–8, similar effects of drain
voltage and gate voltage on drain current
are observed in the simulated structures
having aluminium mole fraction (x) of
0.30 and gate length (Lg) of 0.24.
Again, according to Figures 9–18, the
drain current is higher due to higher drain
voltage at any particular gate voltage (Vg)
corresponding to the gate length (Lg) of
0.48 micron [2–4].

Fig. 1. Representative schematic diagram of the AlGaN/GaN HEMT structure (cross-

sectional view) is shown as a Nanoelectronic device having the AlGaN thickness of 21 nm
with a particular gate length of 480 nm. The source length is fixed as 250 nm in all the
designs. Also, the drain length is fixed as 250 nm in all the designs. The source to gate
distance is fixed as 250 nm in all the designs. The gate to drain distance reduces with the
increasing gate length. The total length of the device is 1750 nm in all the designs.

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 27

 International Journal of Applied Nanotechnology
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

Vg = 0V
180.0m
Vg = -1 V
Vg = -2 V
150.0m Lg = 0.24  m
Vg = -3 V
T = 21 nm

Drain Current (A)

x = 0.15
120.0m
18 -3
doping = 3x10 cm
90.0m

60.0m

30.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 2. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.15 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

270.0m
Vg = 0V
240.0m Vg = -1 V
Vg = -2 V
210.0m Vg = -3 V
Lg = 0.24  m
180.0m
Drain Current (A)

T = 21 nm
x = 0.25
150.0m

120.0m

90.0m
18 -3
doping = 1 x10 cm
60.0m

30.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 3. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

Vg = 0 V
280.00m
Vg = -1 V
245.00m Vg = -2 V
Vg = -3 V Lg = 0.24  m
210.00m T = 21 nm
Drain Current (A)

x = 0.25
175.00m

140.00m
18 -3
doping = 2 x10 cm
105.00m

70.00m

35.00m

0.00

0 3 6 9 12 15
Drain Voltage (V)
Fig. 4. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

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Studies on the Electrical Characteristics of Single-Heterojunction Dutta et al.

400.0m
Vg = 0V
350.0m Vg = -1 V
Vg = -2 V
300.0m Vg = -3 V Lg = 0.24  m
T = 21 nm

Drain Current (A)

250.0m x = 0.25

200.0m
18 -3
150.0m doping = 3 x10 cm

100.0m

50.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 5. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

400.0m
Vg = 0V
350.0m Vg = -1 V
Vg = -2 V
300.0m Vg = -3 V
Lg = 0.24  m
Drain Current (A)

250.0m T = 21 nm
x = 0.30
200.0m

150.0m 18 -3
doping = 1 x10 cm
100.0m

50.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 6. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

400.0m Vg = 0V
Vg = -1 V
350.0m Vg = -2 V
Lg = 0.24  m
Vg = -3 V
300.0m T = 21 nm
Drain Current (A)

x = 0.30
250.0m

200.0m
18 -3
doping = 2 x10 cm
150.0m

100.0m

50.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 7. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

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 International Journal of Applied Nanotechnology
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

450.0m Vg = 0V Lg = 0.24  m
Vg = -1 V T = 21 nm
400.0m
Vg = -2 V x = 0.30
350.0m Vg = -3 V

Drain Current (A)

300.0m

250.0m
18 -3
200.0m doping = 3 x10 cm

150.0m

100.0m

50.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 8. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.

120.0m
Vg = 0V
Vg = -1 V
100.0m Vg = -2 V
Vg = -3 V
Lg = 0.48  m
Drain Current (A)

80.0m
T = 21 nm
x = 0.15
60.0m

40.0m
18 -3
doping = 3 x10 cm
20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 9. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.15 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
90.0m
Lg = 0.48  m
80.0m
T = 21 nm
x = 0.20 Vg = 0V
70.0m
Vg = -1 V
60.0m Vg = -2 V
Drain Current (A)

Vg = -3 V
50.0m

40.0m

30.0m

20.0m 18 -3
doping = 1 x10 cm
10.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 10. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

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Studies on the Electrical Characteristics of Single-Heterojunction Dutta et al.

120.0m
110.0m Lg = 0.48  m
T = 21 nm
100.0m
x = 0.20 Vg = 0V
90.0m Vg = -1 V
80.0m Vg = -2 V

Drain Current (A)

Vg = -3 V
70.0m
60.0m
50.0m
40.0m
18 -3
30.0m doping = 2 x10 cm
20.0m
10.0m
0.0
-10.0m
0 3 6 9 12 15
Drain Voltage (V)

Fig. 11. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

Vg = 0V
140.0m
Vg = -1 V
Vg = -2 V
120.0m Lg = 0.48  m
Vg = -3 V
T = 21 nm
Drain Current (A)

100.0m x = 0.20

80.0m

60.0m 18 -3
doping = 3 x10 cm
40.0m

20.0m

0.0

0 2 4 6 8 10 12 14
Drain Voltage (V)
Fig. 12. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

140.0m Vg = 0V
Vg = -1 V
Vg = -2 V
120.0m
Vg = -3 V Lg = 0.48  m
100.0m T = 21 nm
Drain Current (A)

x = 0.25
80.0m 18 -3
doping = 1 x10 cm

60.0m

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 13. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 31

 International Journal of Applied Nanotechnology
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

Vg = 0V
160.0m
Vg = -1 V
Vg = -2 V
140.0m Lg = 0.48  m
Vg = -3 V
T = 21 nm
120.0m x = 0.25

Drain Current (A)

100.0m

80.0m
18 -3
60.0m doping = 2 x10 cm

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 14. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

200.0m Vg = 0V
Vg = -1 V
180.0m
Vg = -2 V
Lg = 0.48  m
160.0m Vg = -3 V
T = 21 nm
140.0m x = 0.25
Drain Current (A)

120.0m

100.0m
18 -3
80.0m doping = 3 x10 cm

60.0m

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 15. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

210.0m Vg = 0V
Vg = -1 V
180.0m Vg = -2 V
Vg = -3 V
Lg = 0.48  m
150.0m T = 21 nm
Drain Current (A)

x = 0.30
120.0m

90.0m
18 -3
doping = 1 x10 cm
60.0m

30.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 16. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

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Studies on the Electrical Characteristics of Single-Heterojunction Dutta et al.

240.0m
Vg = 0V
210.0m Vg = -1 V
Vg = -2 V
Lg = 0.48  m
180.0m Vg = -3 V
T = 21 nm
x = 0.30

Drain Current (A)

150.0m

120.0m

90.0m 18 -3
doping = 2 x10 cm

60.0m

30.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 17. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

270.0m
Vg = 0V
240.0m Vg = -1 V
Vg = -2 V Lg = 0.48  m
210.0m Vg = -3 V T = 21 nm
x = 0.30
Drain Current (A)

180.0m

150.0m

120.0m 18 -3
doping = 3 x10 cm
90.0m

60.0m

30.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 18. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.

Also, according to Figures 9–18, the drain (Lg) of 0.24 micron and AlGaN doping
current is higher due to higher gate concentration of 3×1018 cm-3. Similarly,
voltage (Vg) at any particular drain according to the Figures 10 and 13, the
voltage corresponding to the gate length drain current is higher at larger
(Lg) of 0.48 micron [2–4]. Again, aluminium mole fraction (x) in the
according to Figures 19–25, the drain simulated structures of 0.48 micron when
current is higher due to higher drain AlGaN doping concentration is 1×1018
voltage at any particular gate voltage (V g) cm-3 [3, 4]. Also, according to the Figures
corresponding to the gate length (Lg) of 12 and 15, the drain current is higher at
0.74 micron [2–4]. Also, according to larger aluminium mole fraction (x) in the
Figures 19–25, the drain current is higher simulated structures of 0.48 micron when
due to higher gate voltage (V g) at any AlGaN doping concentration is 3×1018
particular drain voltage corresponding to cm-3 [3, 4]. According to the comparative
the gate length (Lg) of 0.74 micron [2–4]. studies among Figures 19 to 25, the drain
Comparing the Figures 2 and 5, the drain current is higher due to larger aluminium
current is higher due to larger aluminium mole fraction (x) at the fixed gate length
mole fraction (x) at the fixed gate length (Lg) of 0.74 micron [3, 4].

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 33

 International Journal of Applied Nanotechnology
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

105.00m
Lg = 0.74  m
T = 21 nm
90.00m x = 0.20 Vg = 0V
Vg = -1 V
75.00m Vg = -2 V

Drain Current (A)

Vg = -3 V
60.00m

45.00m
18 -3
doping = 3 x10 cm
30.00m

15.00m

0.00

0 3 6 9 12 15
Drain Voltage (V)

Fig. 19. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

Lg = 0.74  m
90.00m
T = 21 nm
x = 0.25 Vg = 0V
75.00m Vg = -1 V
Vg = -2 V
Drain Current (A)

60.00m Vg = -3 V

45.00m

30.00m 18 -3
doping = 1 x10 cm

15.00m

0.00

0 3 6 9 12 15
Drain Voltage (V)
Fig. 20. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

120.00m
Lg = 0.74  m
105.00m T = 21 nm
x = 0.25 Vg = 0V
90.00m Vg = -1 V
Vg = -2 V
Drain Current (A)

75.00m Vg = -3 V

60.00m

45.00m 18 -3
doping = 2 x10 cm
30.00m

15.00m

0.00

0 3 6 9 12 15
Drain Voltage (V)

Fig. 21. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 34

Studies on the Electrical Characteristics of Single-Heterojunction Dutta et al.

140.0m
Lg = 0.74  m
120.0m T = 21 nm
Vg = 0V
x = 0.25 Vg = -1 V
100.0m Vg = -2 V

Drain Current (A)

Vg = -3 V
80.0m

60.0m 18 -3
doping = 3 x10 cm

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 22. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
140.0m
Lg = 0.74  m
120.0m T = 21 nm
x = 0.30 Vg = 0V
Vg = -1 V
100.0m Vg = -2 V
Drain Current (A)

Vg = -3 V
80.0m

60.0m
18 -3
doping = 1 x10 cm
40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 23. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

160.0m Lg = 0.74  m
T = 21 nm
140.0m
x = 0.30 Vg = 0V
120.0m Vg = -1 V
Vg = -2 V
Drain Current (A)

100.0m Vg = -3 V

80.0m
18 -3
doping = 2 x10 cm
60.0m

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)
Fig. 24. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

IJAN (2019) 26–38 © JournalsPub 2019. All Rights Reserved Page 35

 International Journal of Applied Nanotechnology
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com

180.0m
Lg = 0.74  m
160.0m T = 21 nm Vg = 0V
x = 0.30 Vg = -1 V
140.0m
Vg = -2 V

Drain Current (A)

120.0m Vg = -3 V

100.0m
18 -3
80.0m doping = 3 x10 cm

60.0m

40.0m

20.0m

0.0

0 3 6 9 12 15
Drain Voltage (V)

Fig. 25. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.

Comparing among the Figures 8, 18 and present work will be helpful to fabricate
25, the drain current is lower due to larger the AlGaN/GaN HEMTs experimentally
gate length at the aluminium mole fraction for applications in sensor technology.
(x) of 0.30 with AlGaN doping
concentration of 3×1018 cm-3 [2–4]. REFERENCES
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nano-layer thickness to control the
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Cite this Article: Avrajyoti Dutta, Sanjib Kalita, Subhadeep

Mukhopadhyay. Studies on the Electrical Characteristics of Single-
Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm.
International Journal of Applied Nanotechnology. 2019; 5(2): 26–38p.

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