Professional Documents
Culture Documents
(26-38) 130 - Avra - Mukhopadhyay - 29.01.2020 PDF
(26-38) 130 - Avra - Mukhopadhyay - 29.01.2020 PDF
ISSN: 2455-8524
Vol. 5: Issue 2
www.journalspub.com
ABSTRACT
In this work, we have studied the electrical characteristics of single-heterojunction
AlGaN/GaN high electron mobility transistors (HEMTs). The effects of drain voltage and
gate voltage on variations of drain current have studied on the basis of simulated HEMT
structures. Also, we have studied the effects of aluminium mole fraction, gate length and
doping concentration on variations of drain current based on the simulated HEMT
structures. This present work will be helpful to fabricate the AlGaN/GaN HEMTs
experimentally for applications in sensor technology.
Keywords: drain voltage, gate voltage, mole fraction, gate length, drain current
*Corresponding Author
E-mail: subhadeepmukhopadhyay21@gmail.com
Vg = 0V
180.0m
Vg = -1 V
Vg = -2 V
150.0m Lg = 0.24 m
Vg = -3 V
T = 21 nm
60.0m
30.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 2. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.15 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
270.0m
Vg = 0V
240.0m Vg = -1 V
Vg = -2 V
210.0m Vg = -3 V
Lg = 0.24 m
180.0m
Drain Current (A)
T = 21 nm
x = 0.25
150.0m
120.0m
90.0m
18 -3
doping = 1 x10 cm
60.0m
30.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 3. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
Vg = 0 V
280.00m
Vg = -1 V
245.00m Vg = -2 V
Vg = -3 V Lg = 0.24 m
210.00m T = 21 nm
Drain Current (A)
x = 0.25
175.00m
140.00m
18 -3
doping = 2 x10 cm
105.00m
70.00m
35.00m
0.00
0 3 6 9 12 15
Drain Voltage (V)
Fig. 4. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
400.0m
Vg = 0V
350.0m Vg = -1 V
Vg = -2 V
300.0m Vg = -3 V Lg = 0.24 m
T = 21 nm
200.0m
18 -3
150.0m doping = 3 x10 cm
100.0m
50.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 5. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
400.0m
Vg = 0V
350.0m Vg = -1 V
Vg = -2 V
300.0m Vg = -3 V
Lg = 0.24 m
Drain Current (A)
250.0m T = 21 nm
x = 0.30
200.0m
150.0m 18 -3
doping = 1 x10 cm
100.0m
50.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 6. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
400.0m Vg = 0V
Vg = -1 V
350.0m Vg = -2 V
Lg = 0.24 m
Vg = -3 V
300.0m T = 21 nm
Drain Current (A)
x = 0.30
250.0m
200.0m
18 -3
doping = 2 x10 cm
150.0m
100.0m
50.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 7. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
450.0m Vg = 0V Lg = 0.24 m
Vg = -1 V T = 21 nm
400.0m
Vg = -2 V x = 0.30
350.0m Vg = -3 V
250.0m
18 -3
200.0m doping = 3 x10 cm
150.0m
100.0m
50.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 8. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.24 µm.
120.0m
Vg = 0V
Vg = -1 V
100.0m Vg = -2 V
Vg = -3 V
Lg = 0.48 m
Drain Current (A)
80.0m
T = 21 nm
x = 0.15
60.0m
40.0m
18 -3
doping = 3 x10 cm
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 9. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.15 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
90.0m
Lg = 0.48 m
80.0m
T = 21 nm
x = 0.20 Vg = 0V
70.0m
Vg = -1 V
60.0m Vg = -2 V
Drain Current (A)
Vg = -3 V
50.0m
40.0m
30.0m
20.0m 18 -3
doping = 1 x10 cm
10.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 10. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
120.0m
110.0m Lg = 0.48 m
T = 21 nm
100.0m
x = 0.20 Vg = 0V
90.0m Vg = -1 V
80.0m Vg = -2 V
Fig. 11. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
Vg = 0V
140.0m
Vg = -1 V
Vg = -2 V
120.0m Lg = 0.48 m
Vg = -3 V
T = 21 nm
Drain Current (A)
100.0m x = 0.20
80.0m
60.0m 18 -3
doping = 3 x10 cm
40.0m
20.0m
0.0
0 2 4 6 8 10 12 14
Drain Voltage (V)
Fig. 12. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
140.0m Vg = 0V
Vg = -1 V
Vg = -2 V
120.0m
Vg = -3 V Lg = 0.48 m
100.0m T = 21 nm
Drain Current (A)
x = 0.25
80.0m 18 -3
doping = 1 x10 cm
60.0m
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 13. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
Vg = 0V
160.0m
Vg = -1 V
Vg = -2 V
140.0m Lg = 0.48 m
Vg = -3 V
T = 21 nm
120.0m x = 0.25
80.0m
18 -3
60.0m doping = 2 x10 cm
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 14. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
200.0m Vg = 0V
Vg = -1 V
180.0m
Vg = -2 V
Lg = 0.48 m
160.0m Vg = -3 V
T = 21 nm
140.0m x = 0.25
Drain Current (A)
120.0m
100.0m
18 -3
80.0m doping = 3 x10 cm
60.0m
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 15. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
210.0m Vg = 0V
Vg = -1 V
180.0m Vg = -2 V
Vg = -3 V
Lg = 0.48 m
150.0m T = 21 nm
Drain Current (A)
x = 0.30
120.0m
90.0m
18 -3
doping = 1 x10 cm
60.0m
30.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 16. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
240.0m
Vg = 0V
210.0m Vg = -1 V
Vg = -2 V
Lg = 0.48 m
180.0m Vg = -3 V
T = 21 nm
x = 0.30
120.0m
90.0m 18 -3
doping = 2 x10 cm
60.0m
30.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 17. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
270.0m
Vg = 0V
240.0m Vg = -1 V
Vg = -2 V Lg = 0.48 m
210.0m Vg = -3 V T = 21 nm
x = 0.30
Drain Current (A)
180.0m
150.0m
120.0m 18 -3
doping = 3 x10 cm
90.0m
60.0m
30.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 18. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.48 µm.
Also, according to Figures 9–18, the drain (Lg) of 0.24 micron and AlGaN doping
current is higher due to higher gate concentration of 3×1018 cm-3. Similarly,
voltage (Vg) at any particular drain according to the Figures 10 and 13, the
voltage corresponding to the gate length drain current is higher at larger
(Lg) of 0.48 micron [2–4]. Again, aluminium mole fraction (x) in the
according to Figures 19–25, the drain simulated structures of 0.48 micron when
current is higher due to higher drain AlGaN doping concentration is 1×1018
voltage at any particular gate voltage (V g) cm-3 [3, 4]. Also, according to the Figures
corresponding to the gate length (Lg) of 12 and 15, the drain current is higher at
0.74 micron [2–4]. Also, according to larger aluminium mole fraction (x) in the
Figures 19–25, the drain current is higher simulated structures of 0.48 micron when
due to higher gate voltage (V g) at any AlGaN doping concentration is 3×1018
particular drain voltage corresponding to cm-3 [3, 4]. According to the comparative
the gate length (Lg) of 0.74 micron [2–4]. studies among Figures 19 to 25, the drain
Comparing the Figures 2 and 5, the drain current is higher due to larger aluminium
current is higher due to larger aluminium mole fraction (x) at the fixed gate length
mole fraction (x) at the fixed gate length (Lg) of 0.74 micron [3, 4].
105.00m
Lg = 0.74 m
T = 21 nm
90.00m x = 0.20 Vg = 0V
Vg = -1 V
75.00m Vg = -2 V
45.00m
18 -3
doping = 3 x10 cm
30.00m
15.00m
0.00
0 3 6 9 12 15
Drain Voltage (V)
Fig. 19. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.20 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
Lg = 0.74 m
90.00m
T = 21 nm
x = 0.25 Vg = 0V
75.00m Vg = -1 V
Vg = -2 V
Drain Current (A)
60.00m Vg = -3 V
45.00m
30.00m 18 -3
doping = 1 x10 cm
15.00m
0.00
0 3 6 9 12 15
Drain Voltage (V)
Fig. 20. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
120.00m
Lg = 0.74 m
105.00m T = 21 nm
x = 0.25 Vg = 0V
90.00m Vg = -1 V
Vg = -2 V
Drain Current (A)
75.00m Vg = -3 V
60.00m
45.00m 18 -3
doping = 2 x10 cm
30.00m
15.00m
0.00
0 3 6 9 12 15
Drain Voltage (V)
Fig. 21. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
140.0m
Lg = 0.74 m
120.0m T = 21 nm
Vg = 0V
x = 0.25 Vg = -1 V
100.0m Vg = -2 V
60.0m 18 -3
doping = 3 x10 cm
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 22. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.25 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
140.0m
Lg = 0.74 m
120.0m T = 21 nm
x = 0.30 Vg = 0V
Vg = -1 V
100.0m Vg = -2 V
Drain Current (A)
Vg = -3 V
80.0m
60.0m
18 -3
doping = 1 x10 cm
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 23. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 1×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
160.0m Lg = 0.74 m
T = 21 nm
140.0m
x = 0.30 Vg = 0V
120.0m Vg = -1 V
Vg = -2 V
Drain Current (A)
100.0m Vg = -3 V
80.0m
18 -3
doping = 2 x10 cm
60.0m
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 24. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 2×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
180.0m
Lg = 0.74 m
160.0m T = 21 nm Vg = 0V
x = 0.30 Vg = -1 V
140.0m
Vg = -2 V
100.0m
18 -3
80.0m doping = 3 x10 cm
60.0m
40.0m
20.0m
0.0
0 3 6 9 12 15
Drain Voltage (V)
Fig. 25. V-I characteristics of the AlxGa(1-x)N/GaN HEMT when AlGaN doping concentration
is 3×1018 cm-3 with Aluminium mole fraction (x) of 0.30 having AlGaN thickness (T) of 21 nm
corresponding to the gate length (Lg) of 0.74 µm.
Comparing among the Figures 8, 18 and present work will be helpful to fabricate
25, the drain current is lower due to larger the AlGaN/GaN HEMTs experimentally
gate length at the aluminium mole fraction for applications in sensor technology.
(x) of 0.30 with AlGaN doping
concentration of 3×1018 cm-3 [2–4]. REFERENCES
Comparing among the Figures 3 to 5, the [1] R Brown. A novel AlGaN/GaN based
drain current is higher due to larger doping enhancement mode high electron
concentration at the gate length (Lg) of mobility transistor with sub-critical
0.24 micron with aluminium mole fraction barrier thickness, Thesis, University
(x) of 0.25 [2–4]. Comparing among the of Glasgow, 2015.
Figures 10 to 12, the drain current is [2] M Charfeddine, H Belmabrouk, M A.
higher due to larger doping concentration Zaidi, H Maaref. 2-D theoretical
at the gate length (Lg) of 0.48 micron with model for current-voltage
aluminium mole fraction (x) of 0.20 [2–4]. characteristics in AlGaN/GaN
Comparing among the Figures 20 to 22, HEMTs. Journal of Modern Physics,
the drain current is higher due to larger 2012; 3: 881–886.
doping concentration at the gate length [3] S Mukhopadhyay, S Kalita. Report
(Lg) of 0.74 micron with aluminium mole on the effects of mole fraction,
fraction (x) of 0.25 [2–4]. doping concentration, gate length and
nano-layer thickness to control the
CONCLUSIONS device engineering in the
According to the simulation performed in Nanoelectronic AlGaN/GaN HEMTs
this work, the drain current is higher at at 300 K to enhance the reputation of
higher drain voltage in single- the National Institute of Technology
heterojunction AlGaN/GaN HEMTs. The Arunachal Pradesh. Nano Trends,
drain current is higher at higher gate 2017; 19: 15–47.
voltage. The drain current is higher due to [4] S Mukhopadhyay. Report on the
larger aluminium mole fraction. The drain Novel Electrical Characteristics of
current is higher at lower gate length. The Microelectronic High Electron
drain current is higher at larger doping Mobility Transistors to Establish a
concentration in AlGaN nano-layer. This Low-Cost Microelectronics