Ex.

No:
CHARACTERISTICS OF JFET
DATE:

1. AIM:
To study the characteristics of Junction Field Effect Transistor.

2. APPARATUS REQUIRED:
S.NO NAME OF THE APPARATUS RANGE QUANTITY

1 Regulated Power Supply 0-30V 2

2 Resistor 1kΩ 2
3 Ammeter 0-100mA 1
4 Voltmeter 0-30V 2
5 JFET BFW10 1
6 Bread board - 1
7 Connecting wires - As required

3. THEORY:
The Junction Field-Effect Transistor (JFET ) is a three-terminal semiconductor devices that can
be used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. JFET's are
divided into two types based on the type of channel namely p channel JFET and n- channel JFET. In an
N-channel JFET an N-type silicon bar, referred to as the channel, has two smaller pieces of P-type
silicon material diffused on the opposite sides of its middle part, forming P-N junctions. The two P-N
junctions forming diodes or gates are connected internally and a common terminal, called the gate
terminal, is brought out. Ohmic contacts (direct electrical connections) are made at the two ends of the
channel one lead is called the Source terminal S and the other Drain terminal D.
𝑉𝐺𝑆 2
𝐼𝐷 = 𝐼𝐷𝑆𝑆 (1 − ) (1)
𝑉𝑃

ID is the current of the drain

IDSS is the drain to source saturation current.
VGS is the gate source voltage
VP is the pinch off voltage
 Top View

Bottom View
Fig. 1: Pin Diagram of JFET

3.1 JFET PARAMETERS:

➢ Drain Resistance (rd): It is given by the relation of small change in drain to source
voltage to the corresponding change in Drain Current for a constant gate to source voltage, when
the JFET is operating in pinch-off region.

∆𝑉𝐷𝑆
𝑟𝑑 = at a constant VGS (2)
∆𝐼𝐷

➢ Trans Conductance (gm): Ratio of small change in drain current( ID) to the
corresponding change in gate to source voltage ( VGS) for a constant VDS.

∆𝐼𝐷
𝑔𝑚 = at a constant VDS (3)
∆𝑉𝐺𝑆

The value of gm is expressed in mho’s ( ) or Siemens (s).

 ➢ Amplification factor (µ): It is given by the ratio of small change in drain to source
voltage ( VDS) to the corresponding change in gate to source voltage ( VGS) for a constant drain
current (ID).

∆𝑉 ∆𝐼
µ = ( ∆𝐼𝐷𝑆 ) ∗ (∆𝑉 𝐷 ) (4)
𝐷 𝐺𝑆

µ = 𝑟𝑑 ∗ 𝑔𝑚 (5)

4. CIRCUIT DIAGRAM:

VDD

VGG

Fig. 2: Circuit Diagram of JFET

5. PROCEDURE:
5.1 DRAIN CHARACTERISTICS:

1. Connect the circuit as shown in the figure.

2. Keep VGS = 0V by varying VGG.
3. Varying VDD gradually in steps of 1V up to 10V note down drain current ID and drain to source
voltage VDS.
4. Repeat step3 for VGS = -1V.
5.2TRANSFER CHARACTERISTICS:

1. Connect the circuit as shown in the figure.

2. Set voltage VDS = 2V.
3. Varying VGG gradually, note down both drain current ID and gate-source voltage(VGS).
4. Repeat step 3 for VDS = 4V.

6. OBSERVATIONS:
6.1 DRAIN CHARACTERISTICS

VGS = 0V VGS = -1V

S.No. VDD (V)
VDS (V) ID (mA) VDS (V) ID (mA)

6.2TRANSFER CHARACTERISTICS

VDS = 2V/5V VDS = 4V/8V

S.No. VGG (V)
VGS (V) ID (mA) VGS (V) ID (mA)
7. GRAPH

Fig. 3: Drain & Transfer characteristics of JFET

1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at a constant VGS.
2. Plot the transfer characteristics by taking VGS on X-axis and taking ID on Y-axis at constant VDS.

8. CALCULATIONS FROM GRAPH:

Drain Resistance (rd):

∆𝑉𝐷𝑆
𝑟𝑑 = at a constant VGS (a)
∆𝐼𝐷

Trans Conductance (gm):

∆𝐼𝐷
𝑔𝑚 = at a constant VDS (b)
∆𝑉𝐺𝑆

Amplification factor (µ):

µ = 𝑟𝑑 ∗ 𝑔𝑚 (c)

9. INFERENCE

10. RESULT:
Thus the Drain and Transfer characteristics of JFET were studied.
11 .PRE-LAB QUESTIONS:
1. Why FET is less noisy?
2. What is the difference between n- channel FET and p-channel FET?
3. Why FET is called unipolar device?
4. What are the advantages of FET?
5. What are the disadvantages of FET?
6. What is pinch off region?
7. Write the shockley current equation of JFET