ox ast ax a3 on os ase ase aso axe as ous ous oe ono ost one as ase ass Match the folowing opamp configurations with thelr feedback conditions. a “@) averting opamp with negative Tanda wy D sa Ty ertg ap aap pate edbaak ue aH © TR) Non Tavern opamp wh posva Toda mt Ny, w ‘Non -lnvertng opamp with Noga Feedback we A-RB-06-RO-s A-sB-oc-rD-s A-SB-RcOD-R a-se-Rc-aoy [ans.c] « + Total phase shift = 100° Pace sit Nopitive feeb. Input at non inverting SS serminal | -SNon Inverting opamp opamp. + Nogativo feedback Inverting opamp Total phase shih'= 360" 5 Positive feedback 076 360" site same ting > Non —taverting opamp Positive tedbacle Phase hit rom base to collector THO" & Tor base To omar TE™ reat (3) lansc} Sint isnot ven ymmete sD orect (2) taker ve vlior Sovalidsignaline™# A communication system transmits a symbal from the constellation C, with probability 3/4 and from constellation C; are as shown below cA x22) a X(-2,-2) G It is known that the channel adds white Gaussian noise whose variance is 10°, then the capacity per unit bandwidth is. Given: 1og.10 = 3.32 [ans] Range: 22.9 to 23 Capacity for unt bandwidth = £ = loga(1 + SNRJbits/s/Hz Average energy of transmission signal ‘Average noise power 4, +2 Bape Bg and By, are average energies ofc, and cq respectively POM HLH? 2422) 42 at eat P42) +22 3 oh GaxttexD = logs(t + 8x 10%) log + 6logio 2292 bite/s/H2 For the following signal low graph. Find the polar plot fora unity +Ve feedback system <1 R66) as) fans. tte 142s SONG)" Sear pat FET) HIES 66). isis yar pate At w= 0; 16(6)-H(5)] = 1 25(6).14(6) At = @ ; 1669.4) 26(6). (6) = =180" ‘The polar plat is fea oral 14-0 ‘A MOS capacitor has an oxide layer of thickness 450 4°, the metal semiconductor work function potential difference $m, = —0.693vand the effective positive charge at the semiconductor oxide layer interface , = 48 x 10-*C/cm?. Then the flat band voltage is 'V (up-to accuracy two decimal ) (assume &o = 3.9 £5, 64 = 8854 x 10-** F/m) [Ans “Range: —1.87 to — 1.28 ‘The Flat band voltage Vrs Is glven by Ves = om — 2 ‘Where dius Work fanction potential difference pt Effective positive charge density ox Oxide capacitance per unit area Consider the following program of 8085 microprocessor MVLB, 80H MOV A.B LAsRRG CMP INZLL HLT The contents of the Accumulator, A and carry fag CY after the execution of the instruction CMP B for the 6* time will be A=80H,CY=0 A=02H,CY=1 [ans.D] MvrB, 80H = B=soH MOVAB = BA =A=00 =02H 3 times So, the content of the Accumulator (A) and Carry Flag (CY) after execution of the Instruction CMP 8 for 6 time will be A= 02 H and CY= 1 If the following circuit acts as a Mod-K counter, then the value of 'K’ will be equal to [ane] Presentatate Next state flip Flop Inputs Ces See Ee aie Gr O-O- BD er ® way ‘A perpendicularly polarized wave propagates from region 1 (é4 = 85.1 o)to region 2 free space, with an angle of incidence of 15°. ITE} = 1.0qv/m, find B5,€§ in wv/m. ans. Al The intrinsic impedances are ng _ 1208 sins? _ [ea ‘The angle of transmission fs given by snel!'s Law A alven by: ie 2B _ nyeos 8) nscos8e ‘Then Ep = M2608 mreoste BE ~ nzc0s8;—nicos 8, p= 0623 yoy Si ___cond Test, a.conke BG = 1.623 yV/m ‘The probability that 3 randomly placed rooks (Elephants) on a 3 x 3 chessboard will not kalleach other is, we 1/66 472 3/36 [ans A] ‘Total ways we ean place rooks fs, 9oxax7 3x2x1 Number of combinations when they don't leach other is 3 ways in which we can place 2rooks for 2 2 chess board {Ans “Range: 3.9 t04.1 is v In the given circult, is 1000 for all the transistors. The value off is__mA. 20v 107v NAW L 1k 1 ™ ry + + “ow Ov on (ans. “Range: 19.92 1019.96 107-07 oh Now.)-=Bls +312 ‘0001s +3 In the given circuit, of transistor is 30 & input voltage is SV, the transistor would be operating in av 22ka, 12 senton gon (ans. 5} Consider that ranitor iin active mode 07¥,2¥a=07V vig O2OD)_W7= 12) = Tse Ta _13_ v7 * Tak Toe = 0.1588 + We considered transistor active, Sle = Blp = 30 x O1S3mA = 459mA #Vo= 125 22k. 450m = 190007 For active region - BE junction - Forward blased (s)umetion - Reversed biased Now,Ve= 19 ve=07v v 2 CBieREREBERE 2 Transistorsin ative region Continuous time signal x(t) = te~*u(t) where u(t) is a unit step function. The value of SE x@.dtis [ins] Range: 0.24 1 0:26 x(t) = Pe Ful) [oxo 10 [rena a [eene A bipolar binary signal (is +A vole (or) “A volt pulse dorng the interval(0 7). nthe binary system p(S,) = p(S2) ~2.A~ 1omv.22 = 1 x 10% watts/i and transmission rate is 1 x 10 bps. Using approximation Q(x) * == e*/*, the probability of error is, x10 thenals [ns "TRange: 25 to ‘Tho probability of errr is Le] : cae fia-coyenay (aan, ‘0 Find the radius and centre ofthe circle, by drawing the rot Locus 263) [ans ay G(s)H(s) to ss+3) Break point“ = 0 reak point = s(143)—(646)0543) F435 261 158-18 =0 S4idetie=0 s=-175,-1028 1028-175 ans = 2924 ¥75 2 495 425 425; Center Center = =1.7 + Rad (0) Method: KETO yoga Gem = Tees, Heres Radius ofthe cle = YBE— ab (36=18 = Vi8 425, Center ofthe cicle = (2,0) = (-60) A unity feedback control system shown in the form of a root-locus below, form the plot {nd the peak over shoot [» Consider K = 2] Up to two decimal a7 6.828 (es-Fn 8981085 remit coy ME*Y past xn) 90 Radius of the circle = VBF= ab ~-@ Fromthe plotradius = 2020 Gs) _ ast 4yse+2) Trae fonction = Sy aa __ae+8) “Sern +26+9 pat “Fyre et 6 zee silicon PN-Junction diode Is doped with N, = Ng =22> Zener breakdown occurs when tho peak electri field reaches 10°V/em, The reverse blas breakdown voltage is 1.7 €,€,= 8.85 x 10™f/cm Seao%en?) ] ex assume [ [ans “Range: $45 095.6 [2x 1.6 x 10 x 10% x 105 cuspecme If the effective mass of a hole is equal to thrice the effective mass of an electrons, find the distance of the Fermi level in an intrinsic semiconductor from the centre of the forbidden band at room temperature is, eV. (Vp = 26 mV) (up to three decimals) {4ns.*JRange: 0020 t0 0022 he = 3m In intrinsic semi-conductor hep 25m += eT Toole] [means Ferm level les below the cents offorbiddan gop ata distance of 0.021 eV 22s 22 anq 2 dsibutions inthe quas neutral regions of PNP BT are sketched infgite pve below. The magnitade of Yq and the bas mode of ransistor i (Given: Ve (hermalvltags) —0.026¥) 20 Fe, RC Vo = 0.0598V and reverse active mode .062V and normal active mode (0598V and saturation made 1062V and reverse active mode 1 Reverse active made ‘The minority carrer concentration at E-B junction edge on emitter side is less than the ‘minority concentration a equillbrum.Hemeans that the EB junction i RL whereas, the rinorty carer concentrates at C-B junction to collector side i much higher than the quiisium minority can concentration in the colacor region. t means itis in ES ‘The vanistr (BJT) In which HB Is BB and C8 BB is reverse active mode Consider the assembly language program below LHLD 500K Mov INK MOVE pax MOV L Ink LDAX MOV NOP. puupazEs ‘hddress_| Contents ‘S000 | 02H ‘5001 H_| SOW 50002 | OO 50003 | SOH Let after execution of the above program the content of register H is (P), and the content of accumulator is(Q)q. Then the decimal equivalent value of (P),, + (Qu is Ow (ans. “] Range: 1599 to 160. LRLD So00# = HL = S002 4,84 = 008 MoveM + c= 00H INK HL = 50034 and M = SOK Mova.M 3B = soit Lake a= 02H MoVLA=L= 02H INKB > BC = 5001 LDAXB = A= 50H MOV H,A= H= 50H Nop H= G0) andA = (60) P= (60)q and Q = (50), PeQ= (50450), = 0s = G60) IF (A,B) = (A@B) then the simplified form of the function f(f(x@y, 2), 1) will be equal to xOyOx xeyor x@yOz COO. [ans C] KxOy.2) = 07) 02 = x8y0e Koey@r, 1) = (GeyB2)01 =sOy@: A780Transmission line in first short terminated and the minima locations are noted. When the shart is replaced by a resistive load R,,, the minima locations are not altered and ‘VSWR in measured to be 3. The value of Ry is 250 500, 2250, 2550, (ans. al 2) = 750 and VSWR=3 when the Ine was aly shorted, minima aecurs athe load en ‘Now the load is connected but the minima still lds at same position, Thieaterpret that R,isless then Zy Wee Sovswe = 7258, <2 ‘The magnetic field intensity vector H = Se-'cos a, — 5 cos @ a, in cylindrical coordinates, nd current density a (2,28 0) ~ 258, — 0343, — 25a, - 034, — 158, -034a, 184-0344, Baluate fry where isthe square having vertices (0,0). (2,0) (-2,—2) (0-2) eriented in ant cock wise direction a ~2n a 1) ety o'+ [amen Len ern For the function —_! N= sie Find the value of directional derivative making an angle 30° with the positive x - axis at the point (0, 1). (Ans. *]Range: —0.75 to - 0.25 ate Sugita ay), oy oars tat point (0,1) eye ea yy etree) 11 isa unit vector along the line which makes an angle 30° with + x~ axis then a 30°% + sin30°j = 2+ 4 reso oemataecp(S4 1 =nas=-t Suppose A= B+ Cwhere A, B and C are ‘n’ by ‘n’ square matrices. If‘ contains both positive and negative eigenvalues and Bis positive definite. Then Gite syrmabic Gitte sige ans.cy G cannot be postive definite. that ste case, thn consider an igen vector of for Req) <0 Au < Obutu"(B+O)u) wet wou w'Bu>Ourcu>0 5 Contradiction Z parameters of a network areZs, ‘same networkis, a. 8h, for the {ans.*JRange: 4t0 4 “e parameter onuatons Wawra V=361 + 18h ‘weparameter equations Yabba D Le hials + Match the following P.y(t)=2x7() |. Linear and non-causal Q y(t) =sfsine] | 2, Linear and causal 3. Norvlinear and causal R y= [xaa P1,Q2,R 43 P2.Q>1LR—3 P93,Q—1R—2 P33Q32R41 [ans cl Poy) = 280) Non = linear(due to square operation CCansl (output depends on preset] 0 y(t) BO Fv, weeny = ‘The Fourter transform of x(t) Is +x0) 1 a ea Then the energy of the output signal y (1) {ans "JRange-L1 to14 xo) * © sinters 1 nq - SRS 0 ae 0 =9)-+ N09 NG). 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