Professional Documents
Culture Documents
.
Charge Coupled Devices (CCDs) requiring enhanced performance in the Near Infrared (NIR) region of the
spectrum or at higher X-ray energies can benefit from being constructed on specially selected silicon with
an optimised thickness. Such a CCD, where the electron generation is within this thick silicon, is known as
a Deep Depletion Device (High Resistivity).
Backside illuminated devices
Introduction
In this case, the total thickness of silicon is thinned to
'Deep depletion' devices are variants of certain standard typically <20 µm and longer wavelengths can pass
e2v technologies products fabricated on different silicon through this thickness. This means that long
material to increase the quantum efficiency at near-IR wavelengths (e.g. >800 nm) are not efficiently absorbed.
wavelengths and with higher energy X-rays, but without
loss of spatial resolution.
The introduction of deep depletion silicon
e2v technologies limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU United Kingdom Telephone: +44 (0) 1245 493493 Facsimile: +44 (0) 1245 492492
e-mail: enquiries@e2vtechnologies.com Internet: www.e2vtechnologies.com Holding Company: e2v holdings limited
e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: (914) 592-6050 Facsimile: (914) 592-5148 e-mail: enquiries@e2vtechnologies.com
Note that the spatial resolution of deep depletion devices can degrade when fast optics are used if the cone of light
extending into the silicon from a focused spot generates charge directly beneath adjacent pixels. This is simply a
consequence of active depth being greater than the pixel pitch, and standard devices may be preferable for such
applications.
Also, since we consider that cosmetic quality of deep depletion silicon is somewhat poorer, a differing cosmetic
specification may be applied for devices of this material.
UV light Visible IR
< 400nm 400-700nm > 700nm
Frontside electrodes
Depleted silicon
Undepleted silicon
Figure 1a. Photon absorption in frontside illuminated CCD; an undepleted region is also shown.
UV light Visible IR
< 400nm 400-700nm > 700nm
Backside surface
Depleted silicon
Frontside electrodes
1E5
1E4
Alpha (/mm)
1E3
1E2
1E1
1E0
1E-1
1E-2
0 200 400 600 800 1000
Wavelength (nm)
60
Standard
Deep depleted
50
Quantum efficiency (%) at 20C
40
30
20
10
0
400 500 600 700 800 900 1000 1100
Wavelength (nm)
Figure 3. Frontside illuminated CCD- comparison of standard and deep-depletion silicon response.
100%
D-D Si Std mid
90%
Std Si Astro BB
80%
Quantum efficiency at -100C
70%
60%
50%
40%
30%
20%
10%
0%
300 400 500 600 700 800 900 1000
Wavelength (nm)
Figure 4. Backside illuminated CCD- comparison of standard and deep depletion silicon
(note that different AR coatings have been applied in the two cases).
Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof
and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond that set out in its standard conditions of sale in
respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.