NEC NPN SILICON POWER TRANSISTOR 2SD1694 DESCRIPTION The 2SD1694 is High hee and Low Voe(a) transistor. FEATURES ABSOLUTE It is suitable for use to operate from IC without predriver, such a hammer driver. (© High DC Current Gain : hee = 800 to 3200. © Low Collector Saturation Voltage. Veetat) = 0.4 V MAX. (@ Io/Ig ‘© High Total Power Dissipation : Pr MAXIMUM RATINGS Maximum Temperatures Storage Temperature... Junction Temperature Maximum Power Dissipations =85 to +150 °C «#150 °C Maximum PACKAGE DIMENSIONS In eitieters (inches) (asia WAXY a as max _ aseiKe 28 max & [Fxzeom ory = aL WAH er La g & ag 3 a ae ‘S| s|3 F | 3 ‘Total Power Dissipation (Tg= 25°C) ........ 13 W a Total Power Dissipation (Te = 25°C) . 20 Ww (0.096) (0.090) Maximum Voltage and Currents (T, = 25°C) oD Veo Collector to Bate Voltage... €0 V Veeo Collectorto Emitter Voltage... @0 V + ene Veso Emitter to Base Voltage ....--.... 70 V ® mounting plane eto) Collector Current .... 62200055 30 A om eee Clerc ea taioc) Bate Current « 05 A * PW S toms, Duty Cele = 80% ELECTRICAL CHARACTERISTICS (T, = 25°C) Svwsor__cnARACTeRIsTIC wine WaK wir Test conorTions neers BEGurent Gan 700 1400 = Vee “80, i¢= mA heez'* Euan ain soo 180000 Vge OV, IC“ 05 brea? DE Curran Gln soo 1200 : ov.igr304 ton Tenn Toe oo emi 240 Fal Tine 1 2m Cater StrtonVolage 02 ov tase Surin Voge os 12 Cotector Cua Curent 10 aA Vegs60V,1g=0 Ein Cutt Curent 10 GA Vep=50¥, 10-0 Guin Bandi Proce 100280 Wie Vee=8OV. 1g 10. Ovtoutcapcies $060 Veg=10V. Je =0,t+ 1 Mie + Pw 2 960. as, Duty Cycle 2% Classification of heez M L K Range {200 t0 7600 | 1000 %0 2000 | 1600 xo 3200 Test Gonditions: Vee = 80, 1¢=05A 488NEC 2SD1694 TYPICAL CHARACTERISTICS (T= 25 °C) avabePaneeagien i ] i PHAR ie ef Ambient Tenperaure ="C EBLtEcTOR Fo emit TEA “ as & po ee E 5, : Joa BASE AND COLLECTOR SATURATION VoLTAGe vs. a bh 3 gs i i 3 B : i Soe 3 58, oor aT 10-10 Ig- Collector Curent SAFE OPERATING AREA soem Taso i j os bos 25-30 1250-100 Voe~Calector te Emitter Votage—¥ couuecton cunnent vs BASE TS EwiTTER VOLTAGE eesov Ig Cllactor Curent oz ae 08 Os 1D TZ Ts Vg Base to Emitter Voltage V GAIN BANDWIDTH PRODUCT ve SouLecron'cURnENt 3 g 8 8 y-Gain Bandwith Product MH 2 & 10 Dor ee? dos OT oz 05 10 gCellectr Curent COLLECTOR CURRENT ve EStLecron Fo emirTeR Fad 4 i pe : a vol —ig=05 ma. vee Ca eite vtes REQUAEN Ltr 5 3 va : ® 10| aor OF 16 Ig Callactor Curent