DISCRETE SEMICONDUCTORS

DATA SHEET
dbook, halfpage

M3D186

PN2222A
NPN switching transistor
Product data sheet 2004 Oct 11
Supersedes data of 1999 May 21
NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

FEATURES PINNING
• High current (max. 600 mA) PIN DESCRIPTION
• Low voltage (max. 40 V). 1 collector
2 base
APPLICATIONS 3 emitter
• General purpose switching and linear amplification.

DESCRIPTION handbook, halfpage1 1

2
NPN switching transistor in a TO-92; SOT54 plastic 3
2
package. PNP complement: PN2907A.
3
MAM279

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

ORDERING INFORMATION

PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PN2222A SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 75 V
VCEO collector-emitter voltage open base − 40 V
VEBO emitter-base voltage open collector − 6 V
IC collector current (DC) − 600 mA
ICM peak collector current − 800 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb ambient temperature −65 +150 °C

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NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W

Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current VCB = 60 V; IE = 0 A − 10 nA
VCB = 60 V; IE = 0 A; Tj = 125 °C − 10 µA
IEBO emitter-base cut-off current VEB = 3 V; IC = 0 A − 10 nA
hFE DC current gain VCE = 10 V; IC = 0.1 mA 35 −
VCE = 10 V; IC = 1 mA 50 −
VCE = 10 V; IC = 10 mA 75 −
VCE = 10 V; IC = 10 mA; Tj = −55 °C 35 −
VCE = 1 V; IC = 150 mA 50 −
VCE = 10 V; IC = 150 mA 100 300
VCE = 10 V; IC = 500 mA 40 −
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV
IC = 500 mA; IB = 50 mA 1 − V
VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V
IC = 500 mA; IB = 50 mA − 2 V
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − 8 pF
Ce emitter capacitance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz − 25 pF
fT transition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz 300 − MHz
F noise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ; − 4 dB
f = 1 kHz
Switching times (between 10 % and 90 % levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA; − 35 ns
td delay time IBoff = −15 mA; Tamb = 25 °C − 15 ns
tr rise time − 20 ns
toff turn-off time − 250 ns
ts storage time − 200 ns
tf fall time − 60 ns

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NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

VBB VCC

RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
VI DUT

R1

mlb826

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

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NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

d A L

1
e1
2
D e

b1
L1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A b b1 c D d E e e1 L L1(1)
max.
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5
mm 2.54 1.27 2.5
5.0 0.40 0.55 0.38 4.4 1.4 3.6 12.7

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-06-28
SOT54 TO-92 SC-43A
04-11-16

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NXP Semiconductors Product data sheet

NPN switching transistor PN2222A

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
General ⎯ Information in this document is believed to be
above those given in the Characteristics sections of this
accurate and reliable. However, NXP Semiconductors
document is not implied. Exposure to limiting values for
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Applications ⎯ Applications that are described herein for Quick reference data ⎯ The Quick reference data is an
any of these products are for illustrative purposes only. extract of the product data given in the Limiting values and
NXP Semiconductors makes no representation or Characteristics sections of this document, and as such is
warranty that such applications will be suitable for the not complete, exhaustive or legally binding.
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to

2004 Oct 11 6
 NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13618