AO4410

30V N-Channel MOSFET

General Description Product Summary

The AO4410 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), shoot-through immunity, ID = 18A (VGS = 10V)
body diode characteristics and ultra-low gate RDS(ON) < 5.5mΩ (VGS = 10V)
resistance. This device is ideally suited for use as a RDS(ON) < 6.2mΩ (VGS = 4.5V)
low side switch in Notebook CPU core power
conversion.
100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 18
Current AF TA=70°C ID 15 A
B
Pulsed Drain Current IDM 80
TA=25°C 3
PD W
Power Dissipation TA=70°C 2.1
Avalanche Current B IAR 30 A
B
Repetitive avalanche energy 0.3mH EAR 135 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 59 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 16 24 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 1.1 1.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 80 A
VGS=10V, ID=18A 4.7 5.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.4 7.4
VGS=4.5V, ID=15A 5.2 6.2 mΩ
gFS Forward Transconductance VDS=5V, ID=18A 102 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.64 1 V
IS Maximum Body-Diode Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 9130 10500 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 625 pF
Crss Reverse Transfer Capacitance 387 542 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.2 0.4 0.8 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 72.4 85 nC
Qgs Gate Source Charge VGS=10V, VDS=15V, ID=18A 13.4 nC
Qgd Gate Drain Charge 16.8 nC
tD(on) Turn-On DelayTime 11 15 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.83Ω, 7 11 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 99 135 ns
tf Turn-Off Fall Time 13 19.5 ns
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs 33 40 ns
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 22.2 30 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev7: Nov 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 100000
VDS=15V
ID=18A
4 Ciss

Capacitance (pF)
10000
VGS (Volts)

2 Coss
1000

1
Crss

0 100
0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
100
RDS(ON)
10µs TJ(Max)=150°C
limited 100µs
80 TA=25°C
1ms
10ms
10.0
Power (W)

0.1s 60
ID (Amps)

1s
10s 40

1.0 DC
TJ(Max)=150°C 20
TA=25°C
0
0.001 0.01 0.1 1 10 100 1000
0.1
0.1 1 10 100 Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=40°C/W
1

0.1
PD

FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Ton

Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60
10V
50 50 VDS=5V
2.5V
40 40
ID (A)

ID(A)
30 VGS=2V 30

20 20

125°C 25°C
10 10

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

6.0 1.6

VGS=4.5V
Normalized On-Resistance

VGS=4.5V ID=18A
5.5 1.4
RDS(ON) (mΩ )

VGS=10V
5.0 1.2

VGS=10V
4.5 1

4.0 0.8
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

16 1.0E+02

1.0E+01
12
1.0E+00
ID=18A
125°C
RDS(ON) (mΩ )

1.0E-01
IS (A)

8 125°C
1.0E-02

1.0E-03
4 25°C 25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04

0 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

 Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds

DUT -
Vgs
Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com