‘0 (Pages : 2) 1611 Reg. No. : Name: ies Seventh Semester B.Tech. Degree Examination, May 2012 (2008 Scheme) 08.735 : OPTOELECTRONIC DEVICES (TA) Time : 3 Hours Max. Marks : 100 PART-A Answer all questions. Each question carries 4 marks. 1. Draw the equivalent circuit of a solar cell and explain the parameters. » . Determine the bandwidth of an LED source with a rise time equivalent to 10 ns. 2 Draw the currenVoptical power output curve of a Fabry-Perot laser and explain the relationship. » Calculate the wavelength of the photon absorbed or radiated for a two level system having Ec = 1.4 eV and Ev = OeV. a On the current-voltage characteristics of a solar cell, show why the power Vm Im is ‘smaller than Voc Isc. 2 ALED device fabricated using GaAs material is emitting at a wave length of 650 nm. Calculate the bandgap energy for the material. ~ What two conditions must be met for recombination to be labeled radiative ? ‘A semiconductor sample has a donor-ion concentration ND = 10!%/cm3 and minority — carrier life time = 10 x 10-° s. Compute the generation and recombination rates of EHPs. @ Describe the relationship between LED bandwidth and cartier recombination. © 10. What are the techniques used for determining the life time of an optical source ? (10x4=40 Marks) PTO.nn 1611 PART-B Answer any two questions from each Module. Each question carries 10 marks. Module -1 11. a) Define and explain the quantum efficiency and responsivity of a photodiode. How are the two related to each other ? b) What are the principal noises associated with photo detectors ? 12. Photon of wavelength 0.90;1m are incident on a Pn Photodiode at a rate of 5 x 1019/S and, on an average, the electrons are collected at the terminals of the diode at the rate of 2 x 1019/ S. Calculate: a) The quantum efficiency and b) The responsivity of the diode at this wavelength. 13. a) The energy gap of GaAs is 1.42 eV. Determine, the minimum frequency of light that will cause the transition of an electron from the valence band to the conduction band. b) Describe a method through which the available bandwidth of an APD can be enhanced. Module - I 14. a) Whatis electro-optic effect ? b) How can this effect be used for modulating the phase of an optical signal ? How can the amplitude of the optical signal be modulated ? 15. A certain solar cell has a saturation current of 5 nA and when it is subjected to optical radiation it has a short-circuit current Isc = 40 mA. Determine the open circuit voltage and maximum power available. 16. Estimate the electrical modulation bandwidth for an LED with carrier recombination life time of 8 ns. The frequency response of the device is assumed to be Gaussian. Module - Ill 17. Derive E instein relationship connecting absorption, stimulated emission and spontaneous emission coefficients. . 18. A laser is emitting a spectral line centered at 632.8 nm whose gain curve has a half-width of 3.003 x10-3 nm. If the cavity length of the laser is 20 cm, calculate the number of longitudinal modes excited. Tahe the refractive index of the medium tobe 1.2. 19. List and explain the performance characteristics of VCSEL laser diode. VARS I (6x10=60 Marks)