Si9933BDY

New Product Vishay Siliconix

Dual P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)

0.06 @ VGS = −4.5 V −4.7

−20
0.10 @ VGS = −2.5 V −3.7

S1 S2
SO-8

S1 1 8 D1

G1 2 7 D1

S2 3 6 D2 G1 G2

G2 4 5 D2

Top View

Ordering Information: Si9933BDY—E3 (Lead Free) D1 D2

Si9933BDY-T1—E3 (Lead Free with Tape and Reel)

P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −20
V
Gate-Source Voltage VGS "12

TA = 25_C −4.7 −3.6

Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C −3.8 −2.8
A
Pulsed Drain Current IDM −20

continuous Source Current (Diode Conduction)a IS −1.7 −0.9

TA = 25_C 2.0 1.1

Maximum Power Dissipationa PD W
TA = 70_C 1.3 0.7

Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 55 62.5
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 90 110 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
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Document Number: 72748 www.vishay.com

S-40237—Rev. A, 16-Feb-04 1
Si9933BDY
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.6 −1.4 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA

VDS = −20 V, VGS = 0 V −1

Zero Gate Voltage Drain Current IDSS mA
VDS = −20 V, VGS = 0 V, TJ = 55_C −5
On-State Drain Currenta ID(on) VDS v −5 V, VGS = −4.5 V −20 A
VGS = −4.5 V, ID = −4.7 A 0.048 0.06
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = −2.5 V, ID = −1 A 0.08 0.10

Forward Transconductancea gfs VDS = −10 V, ID = −4.7 A 11 S

Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V −0.75 −1.2 V

Dynamicb
Total Gate Charge Qg 6 9
Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −4.7 A 1.4 nC
Gate-Drain Charge Qgd 1.9
Gate Resistance Rg f = 1 MHz 9.5 W
Turn-On Delay Time td(on) 22 35
Rise Time tr 35 55
VDD = −10 V, RL = 10 W
Turn-Off Delay Time td(off) ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 45 70 ns
Fall Time tf 25 40
Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 25 50

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

20 20
VGS = 5 thru 3.5 V TC = −55_C
3V
25_C
16 16

125_C
I D − Drain Current (A)

I D − Drain Current (A)

12 12
2.5 V

8 8

2V
4 4

1.5 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72748

2 S-40237—Rev. A, 16-Feb-04
 Si9933BDY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance

0.20 1000
r DS(on) − On-Resistance ( W )

0.16 800

C − Capacitance (pF)
Ciss
0.12 600
VGS = 2.5 V

0.08 400

VGS = 4.5 V
Coss
0.04 200

Crss
0.00 0
0 4 8 12 16 20 0 4 8 12 16 20

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

5 1.6
VDS = 10 V VGS = 10 V
V GS − Gate-to-Source Voltage (V)

ID = 4.7 A ID = 4.7 A
4 1.4
rDS(on) − On-Resiistance
(Normalized)

3 1.2

2 1.0

1 0.8

0 0.6
0 1 2 3 4 5 6 7 8 −50 −25 0 25 50 75 100 125 150
Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

30 0.20

0.16
r DS(on) − On-Resistance ( W )

TJ = 150_C
I S − Source Current (A)

10 ID = 1 A
0.12

ID = 4.7 A

0.08

TJ = 25_C

0.04

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 72748 www.vishay.com

S-40237—Rev. A, 16-Feb-04 3
Si9933BDY
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power
0.6 50

0.4 40

ID = 250 mA
V GS(th) Variance (V)

0.2

Power (W)
30

0.0 20

−0.2 10

−0.4 0
−50 −25 0 25 50 75 100 125 150 10−2 10−1 1 10 100 600
TJ − Temperature (_C) Time (sec)

Safe Operating Area

100
IDM Limited
rDS(on) Limited

10
I D − Drain Current (A)

P(t) = 0.001
1
ID(on) P(t) = 0.01
Limited
P(t) = 0.1
TA = 25_C P(t) = 1
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72748

4 S-40237—Rev. A, 16-Feb-04
 Si9933BDY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1 0.05

0.02

Single Pulse
0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

Document Number: 72748 www.vishay.com

S-40237—Rev. A, 16-Feb-04 5
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Revision: 08-Apr-05 1