Small Signal - Transistors, Fets and Diodes Device Databook PDF

Selector Guide 1
Plastic-Encapsulated
2
Transistors
GreenLine Portfolio
3
Devices
Small-Signal Field-Effect
Transistors and MOSFETs
4
Small-Signal Tuning
5
and Switching Diodes
Tape and Reel Specifications

6
and Packaging Specifications
Surface Mount 7
Information
Package Outline
Dimensions
8
Reliability and
9
Quality Assurance
Replacement
10
Devices
Alphanumeric Index 11
Motorola Small-Signal Transistors, FETs and Diodes Device Data

TMOS is a registered trademark of Motorola Inc.
HDTMOS and GreenLine are trademarks of Motorola Inc.
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small-Signal Transistors, FETs and Diodes Device Data

SMALL–SIGNAL TRANSISTORS,
FETs AND DIODES
This publication presents technical information for the several product families that comprise the Motorola
small–signal semiconductor line. The families include bipolar transistors, field–effect transistors, and diodes. These
are available in a variety of through hole and surface mount packages. Complete device specifications and typical
performance curves are given on individual data sheets, which are grouped by the various families.
A quick comparison of performance characteristics is presented in the easy–to–use selector guide in the first
section. The tables will assist in the selection of the proper device for a specific application.
Seperate sections are included to describe package outline drawings and footprints and product reliability and
quality considerations.
The information in this book has been carefully checked and is believed to be accurate; however, no responsibility
is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights to the manufacturer.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims
any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may
be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems
intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may
occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer
shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered
trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
 Motorola, Inc. 1997

Previous Edition  1994
Printed in U.S.A. ”All Rights Reserved”
Motorola Small–Signal Transistors, FETs and Diodes Device Data i

About This Revision
To accomodate the increasing requirements for surface mount components, this publication adds a variety of
device types in several choices of surface mount packages.
• An expanded MOSFET portfolio to include new lower RDS(on) HDTMOS devices in the TSOP–6 package.
• Dual transistors and diodes in the SC–70 multi–lead package.
• A Family of transistors and diodes in the smaller SC–90 package.
It should be noted that Metal Can Transistors previously listed in this data book have been removed for this revision.
Replacement devices for these parts can be found in Chapter 10.
ii Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola Device Classifications
In an effort to provide current information to the customer regarding the status of any given device, Motorola has
classified all devices into three categories: Preferred devices, Current product and Not Recommended for New
Design products.
A Preferred device is a device which is recommended as a first choice for future use. These devices are ”preferred”
by virtue of their performance, price functionality, or combination of attributes which offer the overall ”best” value to
the customer. This category contains both advanced and mature devices which will remain available for the
foreseeable future (generally 3 to 5 years).
Device types identified as ”current” are not a first choice product for new designs, but will continue to be available
because of the popularity and/or standardization or volume usage in current production designs. These products can
be acceptable for new designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a ”preferred device” is a ”current” device.
Products designated as ”Not Recommended for New Design” may become obsolete as dictated by poor market
acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an
uncertain future and do not represent a good selection for new device designs or long term usage.
All ”Not Recommended for New Design” devices have been removed from the data book. In the event the
device you need is no longer found within an appropriate section of the data book, refer to the Replacement
Devices index at the back of the book to see if there is a Replacement Part for the device in question.
Motorola Small–Signal Transistors, FETs and Diodes Device Data iii

Table of Contents
Selector Guide . . . . . . . . . . . . . . . . . . . . . 1–1 Small–Signal Tuning and
Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–2 Switching Diodes . . . . . . . . . . . . . . . . . . 5–1
Plastic–Encapsulated Transistors . . . . . . . . . . . . . . . . 1–2 Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . 5–2
Plastic–Encapsulated Multiple Transistors . . . . . . . . . 1–8 Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . 5–2
Plastic–Encapsulated Surface Mount Device Markings/Date Code Characters . . . . . . . . . . . . . 5–2
Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–10 Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–3
Field–Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 1–18
JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–18 Tape and Reel Specifications and
TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–20
Packaging Specifications . . . . . . . . . . . . 6–1
Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 1–21
Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 1–23 Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 6–2
Tuning Diodes  Abrupt Junction . . . . . . . . . . . . . . . 1–23 Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 6–5
Tuning Diodes  Hyper–Abrupt Junction . . . . . . . . 1–26
Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–29 Surface Mount Information . . . . . . . . . 7–1
Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–31 Information for Using Surface Mount Packages . . . . . . . 7–2
Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 1–35 Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . 7–4
GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–36
Small Signal Multi–Integrated Devices . . . . . . . . . . . 1–38 Package Outline Dimensions . . . . . . . 8–1
Plastic–Encapsulated Transistors . . . 2–1 Package Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . 8–2
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . 2–2
Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . 2–2 Reliability and Quality Assurance . . . 9–1
Device Markings/Date Code Characters . . . . . . . . . . . . . 2–2 Outgoing Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–2
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–3 Reliability Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–2
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–4
GreenLine Portfolio . . . . . . . . . . . . . . . 3–1 Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–4
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–2 Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–4
Reliability Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9–5
Small–Signal Field–Effect
Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . . . 9–7
Transistors and MOSFETs . . . . . . . . . . . . 4–1
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . 4–2
Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . 4–2
Replacement Devices . . . . . . . . . . . . . 10–1
Device Markings/Date Code Characters . . . . . . . . . . . . . 4–2
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–3 Alphanumeric Index . . . . . . . . . . . . . . . 11–1
iv Motorola Small–Signal Transistors, FETs and Diodes Device Data

Section 1
Selector Guide
In Brief . . .
This selector guide highlights semiconductors that are the
most popular and have a history of high usage for the most
applications.
A large selection of encapsulated plastic transistors, FETs
and diodes are available for surface mount and insertion
assembly technology. Plastic packages include TO-92
(TO–226AA), 1-Watt TO-92 (TO–226AE), SOT-23,
SC-70/SOT-323, SC–90/SOT–416, SC-59, SOD-123,
SOT–223, SOT–363, and TSOP–6. Plastic multiples are
available in 14–pin and 16–pin dual–in–line packages for
insertion applications: SO–14 and SO–16 for surface mount
applications.
Motorola Small–Signal Transistors, FETs and Diodes Device Data Selector Guide
1–1
Bipolar Transistors
CASE 29–05
TO–226AE
Plastic–Encapsulated 1 1–WATT (TO–92)
23
Transistors
Motorola’s Small Signal TO–226 plastic transistors
encompass hundreds of devices with a wide variety of
characteristics for general–purpose, amplifier and switching CASE 29–04
applications. The popular high–volume package combines TO–226AA
proven reliability, performance, economy and convenience to 1 (TO–92)
23
provide the perfect solution for industrial and consumer design
problems. All devices are laser marked for ease of
identification and shipped in antistatic containers, as part of
Motorola’s ongoing practice of maintaining the highest
standards of quality and reliability.
Table 1. Plastic–Encapsulated General–Purpose Transistors

These general–purpose transistors are designed for small–signal amplification from dc to low ratio frequencies. They are
also useful as oscillators and general–purpose switches. Complementary devices shown where available (Tables 1–4).
fT @ IC hFE @ IC
V(BR)CEO IC NF
Volts MHz mA dB
NPN PNP Min Min mA Max Min Max mA Max Style
Case 29–04 — TO–226AA (TO–92)

MPS8099 MPS8599 80 150 10 500 100 300 1.0 — 1
MPSA06 MPSA56 80 100 10 500 100 — 100 — 1
2N4410 — 80 60 10 250 60 400 10 — 1
BC546 BC556 65 150 10 100 120 450 2.0 10 17
BC546B BC556B 65 150 10 100 180 450 2.0 10 17
MPSA05 MPSA55 60 100 10 500 100 — 100 — 1
— MPS2907A 60 200 50 600 100 300 150 — 1
BC182 BC212 50 200(1) 10 100 120 500 2.0 10 14
BC237B BC307B 45 150 10 100 200 460 2.0 10 17
BC337 BC327 45 210(1) 10 800 100 630 100 — 17
BC547 BC557 45 150 10 100 120 800 2.0 10 17
BC547A BC557A 45 150 10 100 120 220 2.0 10 17
BC547B BC557B 45 150 10 100 180 450 2.0 10 17
BC547C BC557C 45 150 10 100 380 800 2.0 10 17
MPSA20 MPSA70 40 125 5.0 100 40 400 5.0 — 1
MPS2222A — 40 300 20 600 100 300 150 — 1
2N4401 2N4403 40 200 20 600 100 300 150 — 1
2N4400 2N4402 40 150 20 600 50 150 150 — 1
MPS6602 MPS6652 40 100 50 1000 50 — 500 — 1
2N3903 2N3905 40 200 10 200 50 150 10 6.0 1
2N3904 2N3906 40 250 10 200 100 300 10 5.0 1
BC548 — 30 300(1) 10 100 110 800 2.0 10 17
BC548A — 30 300(1) 10 100 120 220 2.0 10 17
BC548B BC558B 30 300(1) 10 100 200 450 2.0 10 17
BC548C — 30 300 10 100 420 800 2.0 10 17
2N4123 2N4125 30 200 10 200 50 150 2.0 6.0 1
2N4124 — 25 250 10 200 120 360 2.0 4.0 1
BC338 BC328 25 210(1) 10 800 100 630 100 — 17
(1) Typical
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide Motorola Small–Signal Transistors, FETs and Diodes Device Data
1–2
Plastic–Encapsulated Transistors (continued)
Table 1. Plastic–Encapsulated General–Purpose Transistors (continued)

fT @ IC hFE @ IC VCE(sat) @ IC @ IB
V(BR)CEO IC
Volts MHz A Volts
NPN PNP Min Min mA Max Min Max mA Max mA mA Style
Case 29–05 — TO–226AE (1–WATT TO–92)

BDC01D — 100 50 200 0.5 40 400 100 0.7 1000 100 14
BDB01C BDB02C 80 50 200 0.5 40 400 100 0.7 1000 100 1
MPS6717 — 80 50 200 0.5 80 — 50 0.5 250 10 1
MPSW06 MPSW56 80 50 200 0.5 80 — 50 0.4 250 10 1
Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity

These devices are designed to use on applications where good hFE linearity and low–noise characteristics are required:
Instrumentation, hi–fi preamplifier.
hFE @ IC
VT(4) NF(5) fT
V(BR)CEO mV dB MHz
NPN PNP Volts Min Max mA Typ Max Typ Style
Case 29–04 — TO–226AA (TO–92)

— 2N5087 50 250 800 0.1 — 2.0 40(2) 1
MPS6428 — 50 250 650 0.1 7.0(7) 3.5(8) 100(2) 1
BC239 — 45 120 800 2.0 9.5 2.0(1) 280 17
BC550B — 45 180 450 2.0 — 2.5 250 17
BC550C BC560C 45 380 800 2.0 — 2.5 250 17
MPSA18 — 45 500 — 1.0 6.5(1) — 160 1
MPS3904 MPS3906 40 100 300 10 — 5.0 200(2) 1
— MPS4250 40 250 — 10 — 2.0 — 1
BC549B BC559B 30 200 450 2.0 — 2.5 250 17
BC549C BC559C 30 380 800 2.0 — 2.5 250 17
2N5088 — 30 350 — 1.0 — 3.0 50 1
2N5089(6) — 25 450 — 1.0 — 2.0 50 1
MPS6521 MPS6523 25 300 600 2.0 — 3.0 — 1
(1) Typical
(2) Min
(4) VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 kΩ , IC = 200 µA, VCE = 5.0 Volts.
(5) NF: Noise Figure at RS = 2.0 kΩ, IC = 200 µA, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
(7) RS = 10 kΩ , BW = 1.0 Hz, f = 100 MHz
(8) RS = 500 Ω , BW = 1.0 Hz, f = 10 MHz
1–3
Table 3. Plastic–Encapsulated Darlington Transistors

Darlington amplifiers are cascade transistors used in applications requiring very high–gain and input impedance. These
devices have monolithic construction.
hFE @ IC VCE(sat) @ IC & IB f T @ IC
V(BR)CEO IC Volts
NPN PNP Volts Max Min Max mA Max mA mA Min mA Style
Case 29–05 — TO–226AE (1–WATT TO–92)
MPSW45A — 50 1000 25K 150K 200 1.5 1000 2.0 100 200 1
— MPSW64 30 1000 20K — 100 1.5 100 0.1 125 10 1
Case 29–04 — TO–226AA (TO–92)
MPSA29 — 100 500 10K — 100 1.5 100 0.1 125 10 1
BC373 — 80 1000 10K 160K 100 1.1 250 0.25 100 100 1
MPSA27 MPSA77 60 500 10K — 100 1.5 100 0.1 — — 1
BC618 — 55 1000 10K 50K 200 1.1 200 0.2 150 500 17
— MPSA75 40 500 10K — 100 1.5 100 0.1 — — 1
2N6427 — 40 500 20K 200K 100 1.5 500 0.5 — — 1
2N6426 — 40 500 30K 300K 100 1.5 500 0.5 125 10 1
MPSA14 MPSA64 30 500 20K — 100 1.5 100 0.1 125 10 1
MPSA13 MPSA63 30 500 10K — 100 1.5 100 0.1 125 10 1
BC517 — 30 1000 30K — 20 1.0 100 0.1 200(1) 10 17
Table 4. Plastic–Encapsulated High–Current Transistors

The following table is a listing of devices that are capable of handling a higher current range for small–signal transistors.
fT @ IC hFE @ IC VCE(sat) @ IC & IB
V(BR)CEO IC
Volts MHz mA Volts
NPN PNP Min Min mA Max Min Max mA Max mA mA Style
Case 29–05 — TO–226AE (1–WATT TO–92)

MPS6715 MPS6727 40 — — 1000 50 — 1000 0.5 1000 100 1
MPSW01A MPSW51A 40 50 50 1000 50 — 1000 0.5/0.7 1000 100 1
Case 29–04 — TO–226AA (TO–92)
BC489 BC490 80 200/150(1) 50 1000 60 400 100 0.3/0.5 1000 100 17
BC639 BC640 80 60 10 500 40 160 150 0.5 500 50 14
MPS651 MPS751 60 75 50 2000 75 — 1000 0.5 2000 200 1
MPS650 MPS750 40 75 50 2000 75 — 1000 0.5 2000 200 1
BC368 BC369 20 65 10 1000 60 — 1000 0.5 1000 100 1
(1) Typical
1–4
Table 5. Plastic–Encapsulated High–Voltage Amplifier Transistors

These high–voltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for
other applications requiring high–voltage capability at relatively low collector current. These devices are listed in order of
decreasing breakdown voltage (V(BR)CEO).
V(BR)CEO IC
Device Volts Amp Volts MHz
Type Min Max Min mA Max mA mA Min mA Style
Case 29–05 — TO–226AE (1–WATT TO–92) — NPN

MPSW42 300 0.5 40 30 0.5 20 2.0 50 10 1
Case 29–05 — TO–226AE (1–WATT TO–92) — PNP
MPSW92 300 0.5 25 30 0.5 20 2.0 50 10 1
Case 29–04 — TO–226AA (TO–92) — NPN
BF844 400 0.3 50 10 0.5 10 1.0 — — 1
MPSA44 400 0.3 40 100 0.75 50 5.0 — — 1
2N6517 350 0.5 30 30 0.3 10 1.0 40 10 1
BF393 300 0.5 40 10 0.2 20 2.0 50 10 1
MPSA42 300 0.5 40 10 0.5 20 2.0 50 10 1
2N5551 160 0.6 80 10 0.15 10 1.0 100 10 1
Case 29–04 — TO–226AA (TO–92) — PNP
BF493S 350 0.5 40 10 20 20 2.0 50 10 1
2N6520 350 0.5 30 30 0.3 10 1.0 40 10 1
MPSA92 300 0.5 40 10 0.5 20 2.0 50 10 1
2N6519 300 0.5 45 30 0.3 10 1.0 40 10 1
2N5401 150 0.6 60 10 0.2 10 1.0 100 10 1
Case 29–04 — TO–226AA (TO–92)
V(BR)CEO IC
Volts Amp Volts MHz
NPN PNP Min Cont Min mA Max mA mA Min mA Style
BF420 BF421 300 0.5 50 25 2.0 20 2.0 60 10 14
BF422 BF423 250 0.5 50 25 2.0 20 2.0 60 10 14
1–5
Table 6. Plastic–Encapsulated RF Transistors

The RF transistors are designed for small–signal amplification from RF to VHF/UHF frequencies. They are also used as
mixers and oscillators in the same frequency ranges.
hFE @ IC
V(BR)CEO IC fT CRE/CRB NF
Device Volts mA VCE MHz pF dB f
Type Min Max Min mA V Typ Max Typ MHz Style
Case 29–04 — TO–226AA (TO–92) — NPN

BF224 30 50 30 7.0 10 600 0.28 2.5 100 21
MPSH11 25 — 60 4.0 10 650(2) 0.9 — — 2
MPSH10 25 — 60 4.0 10 650(2) 0.65 — — 2
BF199 25 100 40 7.0 10 750 0.35 2.5 35 21
BF959 20 100 40 20 10 600(2) 0.65 3.0 200 21
MPSH17 15 — 25 5.0 10 800(2) 0.9 6.0(3) 200 2
MPS918 15 50 20 8.0 10 600(2) 1.7 6.0(3) 60 1
MPS5179 12 50 25 3.0 1.0 2000(3) — 5.0(3) 200 1
MPS3563 12 50 20 8.0 10 800 1.7 6.0(3) 60 1
Case 29–04 — TO–266AA (TO–92) — PNP
MPSH81 20 50 60 5.0 10 600(2) 0.85 — — 2
Table 7. Plastic–Encapsulated High–Speed Saturated Switching Transistors

ton & toff @ IC hFE @ IC VCE(sat) @ IC & IB fT @ IC
V(BR)CEO
Device ns ns Volts Volts MHz
Type Max Max mA Min Min mA Max mA mA Min mA Style
Case 29–04 — TO–226AA (TO–92) — NPN

2N4264 25 35 10 15 40 10 0.22 10 1.0 300 10 1
MPS3646 18 28 300 15 30 30 0.2 30 3.0 350 30 1
MPS2369A 12 18 10 15 40 10 0.2 10 1.0 — — 1
(2) Min
(3) Max
(9) AGC Capable
1–6
Table 8. Plastic–Encapsulated Choppers

Devices are listed in decreasing V(BR)EBO.
V(BR)EBO IC
Device Volts Amp(1) Volts MHz
Type Min Max Min mA Max mA mA Min mA Style
Case 29–04 — TO–226AA (TO–92) — NPN

MPSA17 15 100 200 5.0 0.25 10 1.0 80 5.0 1
Case 29–04 — TO–266AA (TO–92) — PNP
MPS404A –25 –150 30 –12 –0.2 –24 1.0 — — 1
Table 9. Plastic–Encapsulated Telecom Transistors

These devices are special product ranges intended for use in telecom applications.
hFE @ IC @ VCE fT
PD mW IC
Device V(BR)CEO 25°C mA MHz
Type Volts Amb Cont Min Max mA Volts Min Style
Case 29–04 — TO–226AA (TO–92) — NPN

P2N2222A 40 625 600 75 — 10 10 300 17
Case 29–04 — TO–226AA (TO–92) — PNP
P2N2907A 60 625 600 100 — 10 10 200 17
(1) Typical
1–7
Plastic–Encapsulated
Multiple Transistors
The manufacturing trend has been toward printed circuit
board design with requirements for smaller packages with 14
more functions. In the case of discrete components the use 1
of the multiple device package helps to reduce board space CASE 646–06
requirements and assembly costs. (TO–116)
Many of the most popular devices are offered in the stan- STYLE 1
dard plastic DIP and surface mount IC packages. This in-
cludes small–signal NPN and PNP bipolar transistors,
N–channel and P–channel FETs, as well as diode arrays. 16
1
CASE 751B–05
SO–16
STYLE 4
Specification Tables
The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns
denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.
This applies to Table 10 and 11 of this section only.
KEY
Ref. Point hFE1 ∆VBE Gp NF @ f
Subscript Unit mV dB dB
PD hFE2 Max Min Max
Watts VCE @
One IC fT Cob & IC
ton toff (sat) IC
Die VCE Amp hFE @ IC MHz pF ns ns Volts Unit
TYPE NO. ID Only Volts Max Min Min Max Max Max Max IB
Alphanumeric listing Common–emitter Gp — Power Gain
type numbers DC Current Gain. NF — Noise Figure
f — Test Frequency
Identification Code Units for test Current: AUD — 10–15 kHz
A — ampere Frequency Units:
First Letter: Polarity m — mA H — Hertz M — MHz
C — both types in multiple device u — µA K — kHz G — GHz
N — NPN
P — PNP VCE(sat) — Collector–Emitter
Second Letter: Use Saturation Voltage
A — General Purpose Amplifier Current–Gain–Bandwidth IC — Test Current
E — Low Noise Audio Amplifier Product Current Units: u — µA
F — Low Noise RF Amplifier m — mA
G — General Purpose Amplifier A — Amp
and Switch
H — Tuned RF/IF Amplifier hFE1/hFE2 — Current Gain Ratio
M — Differential Amplifier Continuous (DC) Collector Current VBE — Differential Base Voltage |VBE1 — VBE2|.
S — High Speed Switch Differential Amplifiers
D — Darlington ton — turn–on time
toff — turn–off time
Rated Minimum Collector–Emitter Voltage
Power Dissipation specified at 25°C. Single Subscript letter identifies base termination
die rating. listed below in order of preference. Output Capacitance, common–base. Shown without distinction:
Ref. Point: A — Ambient Temperature SUBSCRIPT: Ccb — Collector–Base Capacitance
C — Case Temperature 0 — VCEO, open Cre — Common–Emitter Reverse Transfer Capacitance
1–8
Plastic–Encapsulated Multiple Transistors (continued)
Table 10. Plastic–Encapsulated Multiple Transistors — Quad

The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are
available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE1 ∆VBE Gp NF @ f
mV dB dB
PD hFE2 Max Min Max
Watts VCE Typ(1)
One IC fT Cob ton toff (sat) @ IC
Die VCEO Amp hFE @ IC MHz pF ns ns Volts IC
Device ID Only Volts Max Min Min Max Max Max Max IB
Case 646–06 — TO–116

MPQ2222A NA 0.65 40 0.5 100 150 m 200 8.0 35(1) 285(1) 0.3 10 150 m
MPQ2369 NS 0.5 15 0.5 40 10 m 450 4.0 9.0(1) 15(1) 0.25 10 10 m
MPQ2483 NA 0.625 40 0.05 150 1.0 m 50 3.0(1) AUD
MPQ2484 NA 0.625 40 0.05 300 1.0 m 50 2.0(1) AUD
MPQ2907A PA 0.65 60 0.6 100 150 m 200 8.0 45(1) 180(1) 0.4 10 150 m
MPQ3467 PS 0.75 40 1.0 20 500 m 125 25 40 90 0.5 10 500 m
MPQ3725 NS 1.0 40 1.0 25 500 m 250 10 35 60 0.45 10 500 m
MPQ3762 PS 0.75 40 1.5 35 150 m 150 15 50 120 0.55 10 500 m
MPQ3798 PA 0.625 40 0.05 150 0.1 m 60 4.0 3.0(1) AUD
MPQ3799 PA 0.625 60 0.05 300 0.1 m 60 4.0 2.0(1) AUD
MPQ3904 NG 0.5 40 0.2 75 10 m 250 4.0 37(1) 136(1) 0.2 10 10 m
MPQ3906 PG 0.5 40 0.2 75 10 m 200 4.5 43(1) 155(1) 0.25 10 10 m
MPQ6001 CG 0.65 30 0.5 40 150 m 200 8.0 30(1) 225(1) 0.4 10 150 m
MPQ6002 CG 0.65 30 0.5 100 150 m 200 8.0 30(1) 225(1) 0.4 10 150 m
MPQ6100A CA 0.5 45 0.05 150 1.0 m 50 4.0 4.0(1) AUD
MPQ6426 ND 0.5 30 0.5 10K 100 m 125 8.0 — — 1.5 10 100 m
MPQ6502 CG 0.65 30 0.5 100 150 m 200 8.0 30(1) 225(1) 0.4 10 150 m
MPQ6600A1 CA 0.5 45 0.05 150 1.0 m 50 4.0 0.8 20 0.25 10 1.0 m
MPQ6700 CA 0.5 40 0.2 70 10 m 200 4.5 0.25 10 1.0 m
MPQ6842 CA 0.75 40 0.5 70 10 m 300 4.5 45 150 0.15 10 0.5 m
MPQ7043 NA 0.75 250 0.5 25 1.0 m 50 5.0 0.5 10 20 m
MPQ7042 NA 0.75 200 0.5 25 1.0 m 50 5.0 0.5 10 20 m
MPQ7051 CG 0.75 150 0.5 25 1.0 m 50 6.0 0.7 10 20 m
MPQ7093 PA 0.75 250 0.5 25 1.0 m 50 5.0 0.5 10 20 m
Table 11. Plastic–Encapsulated Multiple Transistors — Quad Surface Mount

The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package.
These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC fT @ IC
Device V(BR)CEO V(BR)CBO Min mA MHz Min mA
Case 751B–05 — SO–16
MMPQ2222A 40 75 40 500 200 20
MMPQ2369 15 40 20 100 450 10
MMPQ2907A 50 60 50 500 200 50
MMPQ3467 40 40 20 500 125 50
MMPQ3725 40 60 25 500 250 50
MMPQ3904 40 60 75 10 250 10
MMPQ3906 40 40 75 10 200 10
MMPQ6700 (12) 40 40 70 10 200 10
(1) Typical
(12) NPN/PNP
NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
1–9
Plastic–Encapsulated 3 3 4
Surface Mount Transistors 1

1 1
2
This section of the selector guide lists the small–signal plastic 2 2 3
devices that are available for surface mount applications. CASE 318–08 CASE 318D–04 CASE 318E–04
These devices are encapsulated with the latest TO–236AB SC–59 SOT–223
state–of–the–art mold compounds that enhance reliability and SOT–23
exhibit excellent performance in high temperature and high
humidity environments. This package offers higher power 6
dissipation capability for small–signal applications. 3 5 3
4
1 1
2 2
2 3 1
CASE 419–02 CASE 419B–01 CASE 463–01
SC–70/SOT–323 SOT–363 SOT–416/SC–90
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors

The following tables are a listing of small–signal general–purpose transistors in the SOT–23, SC–59, SOT–223, SC–70,
SC–90, and SOT–363 surface mount packages. These devices are intended for small–signal amplification for DC, audio,
and lower RF frequencies. They also have applications as oscillators and general–purpose, low voltage switches.
Pinout: 1–Base, 2–Emitter, 3–Collector
Devices are listed in order of descending breakdown voltage.
hFE @ IC fT
Device Marking V(BR)CEO Min Max mA MHz Min
Case 318–08 — TO–236AB (SOT–23) — NPN

BC846ALT1 1A 65 110 220 2.0 100
BC846BLT1 1B 65 200 450 2.0 100
BC817–16LT1 6A 45 100 250 100 200
BC817–25LT1 6B 45 160 400 100 200
BC817–40LT1 6C 45 250 600 100 200
BC847ALT1 1E 45 110 220 2.0 100
BC847BLT1 1F 45 200 450 2.0 100
BC847CLT1 1G 45 420 800 2.0 100
MMBT2222ALT1 1P 40 100 300 150 200
MMBT3904LT1 1AM 40 100 300 10 300
MMBT4401LT1 2X 40 100 300 150 250
BC848ALT1 1J 30 110 220 2.0 100
BC848BLT1 1K 30 200 450 2.0 100
BC848CLT1 1L 30 420 800 2.0 100
Case 318–08 — TO–236AB (SOT–23) — PNP
BC856ALT1 3A 65 125 250 2.0 100
BC856BLT1 3B 65 220 475 2.0 100
MMBT2907ALT1 2F 60 100 300 150 200
BC807–16LT1 5A 45 100 250 100 200
BC807–25LT1 5B 45 160 400 100 200
BC807–40LT1 5C 45 250 600 100 200
BC857ALT1 3E 45 125 250 2.0 100
BC857BLT1 3F 45 220 475 2.0 100
MMBT3906LT1 2A 40 100 300 10 250
MMBT4403LT1 2T 40 100 300 150 200
BC858ALT1 3J 30 125 250 2.0 100
BC858BLT1 3K 30 220 475 2.0 100
BC858CLT1 3L 30 420 800 2.0 100
1–10
Plastic–Encapsulated Surface Mount Transistors (continued)
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)

hFE @ IC fT
Case 318D–04 — SC–59 — NPN

MSD601–RT1 YR 25 210 340 2.0 150(1)
MSD601–ST1 YS 25 290 460 2.0 150(1)
MSD602–RT1 WR 25 120 240 150 200(1)
MSD1328–RT1 1DR 20 200 350 500 200(1)
Case 318D–04 — SC–59 — PNP
MSB709–RT1 AR 25 210 340 2.0 100(1)
MSB710–RT1 CR 25 120 240 150 200(1)
Case 419–02 — SC–70/SOT–323 —NPN
BC818WT1 6I 45 100 600 100 —
BC818–25WT1 6F 45 160 400 100 —
BC818–40WT1 6G 45 250 600 100 —
BC846AWT1 1A 65 110 220 2.0 100
BC846BWT1 1B 65 200 450 2.0 100
BC847AWT1 1E 45 110 220 2.0 100
BC847BWT1 1F 45 200 450 2.0 100
BC847CWT1 1G 45 420 800 2.0 100
BC848AWT1 1J 30 110 220 2.0 100
BC848BWT1 1K 30 200 450 2.0 100
BC848CWT1 1L 30 420 800 2.0 100
MMBT2222AWT1 1P 40 100 300 150 300
MMBT3904WT1 AM 40 100 300 10 300
MSC3930–BT1 VB 20 70 140 1.0 150
MSD1819A–RT1 ZR 50 210 340 2.0 —
Case 419–02 — SC–70/SOT–323 —PNP
BC808–25WT1 5F 45 160 400 100 —
BC808–40WT1 6F 45 250 600 100 —
BC856AWT1 3A 65 125 250 2.0 100
BC856BWT1 3B 65 220 475 2.0 100
BC857AWT1 3E 45 125 250 2.0 100
BC857BWT1 3F 45 220 475 2.0 100
BC858AWT1 3J 30 110 220 2.0 100
BC858BWT1 3K 30 200 450 2.0 100
BC858CWT1 3L 30 420 800 2.0 100
MMBT2907AWT1 20 60 100 300 150 200
MMBT3906WT1 2A 40 100 300 10 250
MSB1218A–RT1 BR 45 210 340 2.0 —
Case 419B–01 — SOT–363 — Dual NPN
MBT3904DW1T1 MA 40 100 300 10 300
MBT3904DW9T1 MB 40 100 300 10 300
Case 419B–01 — SOT–363 — Dual PNP
MBT3906DW1T1 A2 – 40 100 300 10 250
MBT3906DW9T1 A3 – 40 100 300 10 250
(1) Typical
1–11
C
(OUT)
B R1
Plastic–Encapsulated Surface Mount Transistors (continued) (IN)
R2
E
Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued) (GND)
hFE @ IC fT
Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

MBT3946DW1T1 46 40 100 300 10 250
Case 463–01 — SOT–416/SC–90 — NPN
2SC4617 B9 50 120 560 1.0 180
Case 463–01 — SOT–416/SC–90 — PNP
2SA1774 F9 50 120 560 1.0 140
Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors

Table 13. for General Purpose Applications
These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation
of resistors.
Device Marking V(BR)CEO hFE@ IC IC
Volts mA R1 R2
NPN PNP NPN PNP (Min) Min mA Max Ohm Ohm
Case 318D–04 — SC–59

MUN2211T1 MUN2111T1 8A 6A 50 35 5.0 100 10K 10K
MUN2212T1 MUN2112T1 8B 6B 50 60 5.0 100 22K 22K
MUN2213T1 MUN2113T1 8C 6C 50 80 5.0 100 47K 47K
MUN2214T1 MUN2114T1 8D 6D 50 80 5.0 100 10K 47K
MUN2215T1 MUN2115T1 8E 6E 50 160 5.0 100 10K ∞
MUN2216T1 MUN2116T1 8F 6F 50 160 5.0 100 4.7K ∞
MUN2230T1 MUN2130T1 8G 6G 50 3.0 5.0 100 1.0K 1.0K
MUN2231T1 MUN2131T1 8H 6H 50 8.0 5.0 100 2.2K 2.2K
MUN2232T1 MUN2132T1 8J 6J 50 15 5.0 100 4.7K 4.7K
MUN2233T1 MUN2133T1 8K 6K 50 80 5.0 100 4.7K 47K
MUN2234T1 MUN2134T1 8L 6L 50 80 5.0 100 22K 47K
Case 318–08 — TO–236AB (SOT–23)

MMUN2211LT1 MMUN2111LT1 A8A A6A 50 35 5.0 100 10K 10K
MMUN2212LT1 MMUN2112LT1 A8B A6B 50 60 5.0 100 22K 22K
MMUN2213LT1 MMUN2113LT1 A8C A6C 50 80 5.0 100 47K 47K
MMUN2214LT1 MMUN2114LT1 A8D A6D 50 80 5.0 100 10K 47K
MMUN2215LT1 MMUN2115LT1 A8E A6E 50 160 5.0 100 10K ∞
MMUN2216LT1 MMUN2116LT1 A8F A6F 50 160 5.0 100 4.7K ∞
MMUN2230LT1 MMUN2130LT1 A8G A6G 50 3.0 5.0 100 1.0K 1.0K
MMUN2231LT1 MMUN2131LT1 A8H A6H 50 8.0 5.0 100 2.2K 2.2K
MMUN2232LT1 MMUN2132LT1 A8J A6J 50 15 5.0 100 4.7K 4.7K
MMUN2233LT1 MMUN2133LT1 A8K A6K 50 80 5.0 100 4.7K 47K
MMUN2234LT1 MMUN2134LT1 A8L A6L 50 80 5.0 100 22K 47K
1–12
Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors
for General Purpose Applications (continued)

Volts mA R1 R2
Case 419–02 — SC–70/SOT–323
MUN5211T1 MUN5111T1 8A 6A 50 35 5.0 50 10K 10K
MUN5212T1 MUN5112T1 8B 6B 50 60 5.0 50 22K 22K
MUN5213T1 MUN5113T1 8C 6C 50 80 5.0 50 47K 47K
MUN5214T1 MUN5114T1 8D 6D 50 80 5.0 50 10K 47K
MUN5215T1 MUN5115T1 8E 6E 50 160 5.0 50 10K ∞
MUN5216T1 MUN5116T1 8F 6F 50 160 5.0 50 4.7K ∞
MUN5230T1 MUN5130T1 8G 6G 50 3.0 5.0 50 1.0K 1.0K
MUN5231T1 MUN5131T1 8H 6H 50 8.0 5.0 50 2.2K 2.2K
MUN5232T1 MUN5132T1 8J 6J 50 15 5.0 50 4.7K 4.7K
MUN5233T1 MUN5133T1 8K 6K 50 80 5.0 50 4.7K 47K
MUN5234T1 MUN5134T1 8L 6L 50 80 5.0 50 22K 47K
Case 419B–01 — SOT–363 Duals

MUN5211DW1T1 MUN5111DW1T1 7A 8A 50 35 5.0 100 10K 10K
MUN5212DW1T1 MUN5112DW1T1 7B 8B 50 60 5.0 100 22K 22K
MUN5213DW1T1 MUN5113DW1T1 7C 8C 50 80 5.0 100 47K 47K
MUN5214DW1T1 MUN5114DW1T1 7D 8D 50 80 5.0 100 10K 47K
MUN5215DW1T1 MUN5115DW1T1 7E 8E 50 160 5.0 100 10K ∞
MUN5216DW1T1 MUN5116DW1T1 7F 8F 50 160 5.0 100 4.7K ∞
MUN5230DW1T1 MUN5130DW1T1 7G 8G 50 3.0 5.0 100 1.0K 1.0K
MUN5231DW1T1 MUN5131DW1T1 7H 8H 50 8.0 5.0 100 2.2K 2.2K
MUN5232DW1T1 MUN5132DW1T1 7J 8J 50 15 5.0 100 4.7K 4.7K
MUN5233DW1T1 MUN5133DW1T1 7K 8K 50 80 5.0 100 4.7K 47K
MUN5234DW1T1 MUN5134DW1T1 7L 8L 50 80 5.0 100 22K 47K
MUN5235DW1T1 MUN5135DW1T1 7M 8M 50 80 5.0 100 2.2K 47K
hFE @ IC IC
mA R1 R2
Device Marking V(BR)CEO Min mA Max Ohm Ohm
Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

MUN5311DW1T1 11 50 35 5.0 100 10K 10K
MUN5312DW1T1 12 50 60 5.0 100 22K 22K
MUN5313DW1T1 13 50 80 5.0 100 47K 47K
MUN5314DW1T1 14 50 80 5.0 100 10K 47K
MUN5315DW1T1 15 50 160 5.0 100 10K ∞
MUN5316DW1T1 16 50 160 5.0 100 4.7K ∞
MUN5330DW1T1 3X 50 3.0 5.0 100 1.0K 1.0K
MUN5331DW1T1 31 50 8.0 5.0 100 2.2K 2.2K
MUN5332DW1T1 32 50 15 5.0 100 4.7K 4.7K
MUN5333DW1T1 33 50 80 5.0 100 4.7K 47K
MUN5334DW1T1 34 50 80 5.0 100 22K 47K
MUN5335DW1T1 35 50 80 5.0 100 2.2K 47K

Volts mA R1 R2
Case 463–01 — SOT–416/SC–90
DTC114TE — 94 — 50 100 1.0 100 10K ∞
DTC114YE DTA114YE 69 59 50 80 5.0 100 10K 47K
— DTA143EE — 43 50 15 5.0 100 4.7K 4.7K
1–13
Table 14. Plastic–Encapsulated Surface Mount Switching Transistors

The following tables are a listing of devices intended for high–speed, low saturation voltage, switching applications. These
devices have very fast switching times and low output capacitance for optimized switching performance.
Switching Time (ns) hFE@ IC
fT
Device Marking ton toff V(BR)CEO Min Max mA MHz Min
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT2369LT1 M1J 12 18 15 20 — 100 —
MMBT2369ALT1 1JA 12 18 15 20 — 100 —
BSV52LT1 B2 12 18 12 40 120 10 400
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT3640LT1 2J 25 35 12 20 — 50 500
Table 15. Plastic–Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators

The following table is a listing of devices intended for small–signal RF amplifier applications to VHF/UHF frequencies. These
devices may also be used as VHF/UHF oscillators and mixers.
f T @ IC
Ccb((13))
Device Marking V(BR)CEO pF Max GHz Min mA
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTH10LT1 3EM 25 0.7 0.65 4.0
MMBT918LT1 M3B 15 1.7(14) 0.6 4.0
MMBTH24LT1 M3A 30 0.45 0.4 8.0
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTH81LT1 3D 20 0.85 0.6 5.0
MMBTH69LT1 M3J 15 0.35(13) 2.0 10
Pinout: 1–Emitter, 2–Base, 3–Collector
Case 318D–04 — SC–59 — NPN
MSC2295–BT1 VB 20 1.5(13) 0.15 1.0
MSC2295–CT1 VC 20 1.5(13) 0.15 1.0
MSC3130T1 1S 10 — 1.4 5.0
Case 318D–04 — SC–59 — PNP
MSA1022–CT1 EC 20 2.0(13) 0.15 1.0
(13) C
re
(14) C
ob
1–14
Table 16. Plastic–Encapsulated Surface Mount Choppers

The following table is a listing of small–signal devices intended for chopper applications where a higher than normal
V(BR)CEO is required in the circuit application.
hFE @ IC
Device Marking V(BR)CEO V(BR)EBO Min Max mA
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT404ALT1 2N 35 25 30 400 12
Table 17. Plastic–Encapsulated Surface Mount Darlingtons

The following table is a listing of small–signal devices that have very high hFE and input impedance characteristics. These
devices utilize monolithic, cascade transistor construction.
Devices are listed in order of descending hFE.
VCE(sat) hFE @ IC
Device Marking V(BR)CES Volts Max Min Max mA
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA14LT1 1N 30 1.5 20K — 100
MMBTA13LT1 1M 30 1.5 10K — 100
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBTA64LT1 2V 30 1.5 20K — 100
Table 18. Plastic–Encapsulated Surface Mount Low–Noise Transistors

The following table is a listing of small–signal devices intended for low noise applications in the audio range. These devices
exhibit good linearity and are candidates for hi–fi and instrumentation equipment.
Devices are listed in order of ascending NF.
hFE@ IC
NF fT
Device Marking dB Typ V(BR)CEO Min Max mA MHz Min
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT5089LT1 1R 2.0(15) 25 400 — 10 50
MMBT2484LT1 1U 3.0(15) 60 — 800 10 —
MMBT6428LT1 1KM 3.0 50 250 — 10 100
MMBT6429LT1 1L 3.0 45 500 — 10 100
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT5087LT1 2Q 2.0(15) 50 250 — 10 40
(15) Max
1–15
Table 19. Plastic–Encapsulated Surface Mount High–Voltage Transistors

The following table is a listing of small–signal high–voltage devices designed for direct line operation requiring high voltage
breakdown and relatively low current capability.
hFE@ IC
fT
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBT6517LT1 1Z 350 15 — 100 40
MMBTA42LT1 1D 300 40 — 30 50
MMBT5551LT1 G1 160 30 — 50 100
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT6520LT1 2Z 350 15 — 100 40
MMBTA92LT1 2D 300 25 — 30 50
MMBT5401LT1 2L 150 50 — 50 100
Table 20. Plastic–Encapsulated Surface Mount Drivers

The following is a listing of small–signal devices intended for medium voltage driver applications at fairly high current levels.
hFE@ IC
Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA
Case 318–08 — TO–236AB (SOT–23) — NPN
MMBTA06LT1 1GM 80 0.25 — 100 — 100
BSS64LT1 AM 80 0.15 — 20 — 10
Case 318–08 — TO–236AB (SOT–23) — PNP
BSS63LT1 T1 100 – 0.25 – 0.90 30 — 25
MMBTA56LT1 2GM 80 – 0.25 — 100 — 100
The following devices are designed to conserve energy. They offer ultra–low collector saturation voltage.
Case 318–08 — TO–236AB (SOT–23) — PNP
MMBT1010LT1 GLP 15 0.1 1.1 300 600 100
Case 318–03 — SC–59 — PNP
MSD1010T1 GLP 15 0.1 1.1 300 600 100
Table 21. Plastic–Encapsulated Surface Mount General Purpose Amplifiers

Pinout: 1–Base, 2–Collector, 3–Emitter, 4–Collector
hFE@ IC
Device Marking V(BR)CEO Min Max mA
Case 318E–04 — SOT–223 — NPN
BCP56T1 BH 80 40 250 150
Case 318E–04 — SOT–223 — PNP
Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
BCP53T1 AH 80 40 25 150
1–16
Table 22. Plastic–Encapsulated Surface Mount Switching Transistors

hFE fT
Device Marking ton toff V(BR)CEO Min Max @ IC (mA) Min (MHz)
Case 318E–04 — SOT–223 — NPN
PZT2222AT1 P1F 35 285 40 100 300 20 300
Case 318E–04 — SOT–223 — PNP
PZT2907AT1 P2F 45 100 60 100 300 50 200
Table 23. Plastic–Encapsulated Surface Mount Darlingtons

hFE
VCE(sat)
Device Marking V(BR)CER Max (V) Min Max @ IC (mA)
Case 318E–04 — SOT–223 — NPN
BSP52T1 AS3 80 1.3 2000 — 500
PZTA14T1 P1N 30 1.5 20k — 100
Case 318E–04 — SOT–223 — PNP
BSP62T1 BS3 90 1.3 2000 — 500
PZTA64T1 P2V 30 1.5 20k — 100
Table 24. Plastic–Encapsulated Surface Mount High–Voltage Transistors

hFE fT
Device Marking V(BR)CEO Min Max @ IC (mA) Min (MHz)
Case 318E–04 — SOT–223 — NPN
BSP19AT1 SP19A 350 40 — 20 70
PZTA42T1 P1D 300 40 — 10 50
BF720T1 BF720 250 50 — 10 60
Case 318E–04 — SOT–223 — PNP
PZTA96T1 ZTA96 450 50 150 10 50
PZTA92T1 P2D 300 40 — 10 50
BSP16T1 BSP16 300 30 150 10 15
BF721T1 BF721 250 50 — 10 60
Table 25. Plastic–Encapsulated Surface Mount High Current Transistors

hFE@ IC
VCE(sat)
Device Marking V(BR)CEO Volts Min Max mA
Case 318E–04 — SOT–223 — NPN
PZT651T1 651 60 0.5 75 — 1000
BCP68T1 CA 20 0.5 60 — 1000
Case 318E–04 — SOT–223 — PNP
PZT751T1 ZT751 60 0.5 75 — 1000
BCP69T1 CE 20 0.5 60 — 1000
1–17
Field–Effect Transistors
JFETs
JFETs operate in the depletion mode. They are available in
both P– and N–channel and are offered in both Through–hole CASE 29–04
and Surface Mount packages. Applications include general– TO–226AA
1 (TO–92)
purpose amplifiers, switches and choppers, and RF amplifiers 23
and mixers. These devices are economical and very
rugged. The drain and source are interchangeable on many
typical FETs.
Table 26. JFET Low–Frequency/Low–Noise

The following table is a listing of small–signal JFETs intended for low–noise applications in the audio range. These devices
exhibit good linearity and are candidates for hi–fi and instrumentation equipment.
VGS(off) IDSS
Re Yfsť ť @f Re Yos @ f
ť ť
V(BR)GSS Volts mA
Ciss Crss V(BR)GDO
mmho µmho pF pF Volts
Device Min kHz Max kHz Max Max Min Min Max Min Max Style
Case 29–04 — TO–226AA (TO–92) — N–Channel
J202 — — — — — — 40 0.8 4.0 0.9 4.5 5
2N5457 1.0 1.0 50 1.0 7.0 3.0 25 0.5 6.0 1.0 5.0 5
2N5458 1.5 1.0 50 1.0 7.0 3.0 25 1.0 7.0 2.0 9.0 5
Case 29–04 — TO–226AA (TO–92) — P–Channel
2N5460 1.0 1.0 75 1.0 7.0 2.0 40 0.75 6.0 1.0 5.0 7
2N5461 1.5 1.0 75 1.0 7.0 2.0 40 1.0 7.5 2.0 9.0 7
2N5462 2.0 1.0 75 1.0 7.0 2.0 40 1.8 9.0 4.0 16 7
Table 27. JFET High–Frequency Amplifiers

The following is a listing of small–signal JFETs that are intended for hi–frequency applications. These are candidates for
VHF/UHF oscillators, mixers and front–end amplifiers.
VGS(off) IDSS
Re Yfs @ f
ť ť Re Yos @ f
ť ť
NF @ RG = 1K V(BR)GSS Volts mA
Ciss Crss V(BR)GDO
mmho µmho pF pF dB f Volts
Device Min MHz Max MHz Max Max Max MHz Min Min Max Min Max Style
MPF102 1.6 100 200 100 7.0 3.0 — — 25 — 8.0 2.0 20 5
2N5484 2.5 100 75 100 5.0 1.0 3.0 100 25 0.3 3.0 1.0 5.0 5
2N5485 3.0 400 100 400 5.0 1.0 4.0 400 25 0.5 4.0 4.0 10 5
2N5486 3.5 400 100 400 5.0 1.0 4.0 400 25 2.0 6.0 8.0 20 5
J308 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 1.0 6.5 12 60 5
J309 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 1.0 4.0 12 30 5
J310 12(1) 100 250(1) 100 7.5 2.5 1.5(1) 100 25 2.0 6.5 24 60 5
(1) Typical
1–18
JFETs (continued)
Table 28. JFET Switches and Choppers

The following is a listing of JFETs intended for switching and chopper applications.
VGS(off) IDSS
RDS(on) @ ID Volts mA V(BR)GSS
V(BR)GDO Ciss Crss ton toff
Ω Volts pF pF ns ns
Device Max mA Min Max Min Max Min Max Max Max Max Style
J112 50 — 1.0 5.0 5.0 — 35 28 5.0 — — 5
MPF4392 60 — — — 25 75 30 10 3.5 15 35 5
2N5639 60 1.0 — (8.0)(1) 25 — 30 10 4.0 — — 5
MPF4393 100 — — (12)(1) 5.0 30 30 10 3.5 15 55 5
2N5640 100 1.0 — (6.0)(1) 5.0 — 30 10 4.0 18 45 5
2N5555 150 — — 1.0(16) 15 — 25 5.0 1.2 10 25 5
J110 18 — 0.5 4.0 10 — 25 — — — — 5
(1) Typical
(16) V
GS(f)
1–19
 CASE 29–05
TMOS FETs TO–226AE
1–WATT (TO–92)
1
2
3
D CASE 29–04
TO–226AA
(TO–92) 1
2 3
Table 29. TMOS Switches and Choppers

The following is a listing of small–signal TMOS devices that are intended for switching and chopper applications. These
devices offer low RDS(on) characteristics.
VGS(th)
RDS(on) @ ID Volts
V(BR)DSS Ciss Crss ton toff
Ω Volts pF pF ns ns
Device Max A Min Max Min Max Max Max Max Style
Case 29–05 — TO–226AE (1–WATT TO–92) — N–Channel
MPF930 1.4 1.0 1.0 3.5 35 70(1) 20(1) 15 15 22
MPF960 1.7 1.0 1.0 3.5 60 70(1) 20(1) 15 15 22
MPF6659 1.8 1.0 0.8 2.0 35 30(1) 4(1) 5.0 5.0 22
MPF990 2.0 1.0 1.0 3.5 90 70(1) 20(1) 15 15 22
MPF6660 3.0 1.0 0.8 2.0 60 30(1) 4(1) 5.0 5.0 22
MPF6661 4.0 1.0 0.8 2.0 90 30(1) 4(1) 5.0 5.0 22
MPF910 5.0 0.5 0.3 2.5 60 — — — — 22
VN10LM 5.0 0.5 0.8 2.5 60 60 5.0 10 10 22
VN0300L 1.2 1.0 0.8 2.5 60 100 25 30 30 22
2N7000 5.0 0.5 0.8 3.0 60 60 5.0 10 10 22
BS170 5.0 0.2 0.8 3.0 60 25(1) 3.0(1) 10 10 30
VN0610LL 5.0 0.5 0.8 2.5 60 60 5.0 10 10 22
VN2406L 6.0 0.5 0.8 2.0 240 125 20 8.0 23 22
BS107A 6.4 0.25 1.0 3.0 200 60(1) 6.0(1) 15 15 30
2N7008 7.5 0.5 1.0 2.5 60 50 5.0 20 20 22
VN2222LL 7.5 0.5 0.6 2.5 60 60 5.0 10 10 22
VN2410L 10 0.5 0.8 2.0 240 125 20 8.0 23 22
BS107 14 0.2 1.0 3.0 200 60(1) 6.0(1) 15 15 30
(1) Typical
1–20
Surface Mount FETs 3
CASE 318–08
This section contains the FET plastic packages available for TO–236AB
1 SOT–23
surface mount applications. Most of these devices are the CASE 419–02
2 SC–70/SOT–323
most popular metal–can and insertion type parts carried over 6
to the new surface mount packages. 5
4
4
1
2
3 1
CASE 419B–01 CASE 318E–04 2
3
SOT–363 SOT–223
Table 30. Surface Mount RF JFETs

The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.
Pinout: 1–Drain, 2–Source, 3–Gate
NF Yfs @ VDS
dB f mmhos mmhos
Device Marking Typ MHz Min Max Volts V(BR)GSS Style
Case 318–08 — TO–236AB (SOT–23) — N–Channel
MMBFJ309LT1 6U 1.5 450 10 20 10 25 10
MMBFJ310LT1 6T 1.5 450 8.0 18 10 25 10
MMBFU310LT1 M6C 1.5 450 10 18 10 25 10
MMBF4416LT1 M6A 2(3) 100 4.5 7.5 15 30 10
MMBF5484LT1 M6B 2.0 100 3.0 6.0 15 25 10
Case 419B–01 — SOT–363— Dual N–Channel

MBF4416DW1T1 M6 2.0 100 4.5 7.5 15 30 7
(3) Max
Table 31. Surface Mount General–Purpose JFETs

The following table is a listing of surface mount small–signal general purpose FETs. These devices are intended for
small–signal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and
general–purpose, low–voltage switches.
Yfs @ VDS IDSS
mmhos mmhos mA mA
Device Marking V(BR)GSS Min Max Volts Min Max Style
MMBF5457LT1 6D 25 1.0 5.0 15 1.0 5.0 10
Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBF5460LT1 M6E 40 1.0 4.0 15 1.0 5.0 10
Case 419B–01 — SOT–363 — Dual N–Channel

MBF5457DW1T1 6D 25 1.0 5.0 15 1.0 5.0 7
(3) Max
1–21
Surface Mount FETs (continued)
Table 32. Surface Mount Choppers/Switches JFETs

The following is a listing of small–signal surface mount JFET devices intended for switching and chopper applications.
VGS(off) IDSS
RDS(on) toff
Ohms ns Volts Volts mA mA
Device Marking Max Max V(BR)GSS Min Max Min Max Style
MMBF4391LT1 6J 30 20 30 –4.0 –10 50 150 10
MMBF4392LT1 6K 60 35 30 –2.0 –5.0 25 75 10
MMBF4393LT1 6G 100 50 30 –0.5 –3.0 5.0 30 10
Case 318–08 — TO–236AB (SOT–23) — P–Channel
MMBFJ175LT1 6W 125 — 30 3.0 6.0 7.0 60 10
MMBFJ177LT1 6Y 300 — 30 0.8 2.5 1.5 20 10
Table 33. TMOS FETs

The following is a listing of small–signal surface mount TMOS FETs which exhibit low RDS(on) characteristics.
Pinout: 1–Gate, 2–Source, 3–Drain
RDS(on) @ ID VGS(th) Switching Time
Volts Volts
Device Marking Ohm mA VDSS Min Max ton ns toff ns Style
MMBF170LT1 6Z 5.0 200 60 0.8 3.0 10 10 21
BSS123LT1 SA 6.0 100 100 0.8 2.8 20 40 21
BSS138LT1 J1 3.5 200 50 0.5 1.5 20 20 21
2N7002LT1 702 7.5 500 60 1.0 2.5 20 20 21
MMBF0201NLT1 N1 1.0 300 20 1.0 2.4 2.5 15 21
MGSF1N02LT1 N2 0.085 1200 20 1.0 2.4 2.5 16 21
MGSF1N03LT1 N3 0.09 1200 30 1.0 2.4 2.5 16 21
Case 318–08 — TO–236 (SOT–23) — P–Channel
BSS84LT1 PD 6.0 100 50 1.0 2.4 2.5 16 21
MMBF0202PLT1 P3 1.4 200 20 1.0 2.0 2.5 16 21
MGSF1P02LT1 PC 0.35 1500 20 1.0 2.4 2.5 16 21
MGSF1P02ELT1 PE 0.16 1500 20 0.7 1.2 2.5 15 21
Pinout: 1–Gate, 2–Drain, 3–Source, 4–Drain
RDS(on) VGS(th) Switching Time
Volts Volts
Device Marking Ohm mA VDSS Min Max ton ns toff ns Style
Case 318E–04— SOT–223 — N–Channel
MMFT960T1 FT960 1.7 1000 60 1.0 3.5 15 15 3
MMFT6661T1 T6661 4.0 1000 90 0.8 2.0 5.0 5.0 3
MMFT2406T1 T2406 10 200 240 0.8 2.0 — — 3
MMFT107T1 FT107 14 200 200 1.0 3.0 15 15 3
Case 419–02 — SC–70/SOT–323 — N–Channel
MMBF2201NT1 N1 1.0 300 20 1.0 2.4 2.5 15 8
Case 419–02 — SC–70/SOT–323 — P–Channel
MMBF2202PT1 P3 2.2 200 20 1.0 2.4 2.5 16 8
1–22
Tuning and Switching Diodes
CASE 29–04 1 3
Tuning Diodes — TO–226AA
(TO–92)
Abrupt Junction 1 2
2
STYLE 15
23
Motorola supplies voltage–variable capacitance diodes serving
CASE 51–02
the entire range of frequencies from HF through UHF. Used in RF 1 2
DO–204AA
receivers and transmitters, they have a variety of applications, (DO–7) STYLE 1
including:
• Phase–locked loop tuning systems
• Local oscillator tuning
1 CASE 182–02
• Tuned RF preselectors 2 1
TO–226AC
• RF filters (TO–92)
Cathode Anode
• RF phase shifters STYLE 1
1
• RF amplifiers
2
• Automatic frequency control
• Video filters and delay lines
3
• Harmonic generators CASE 318–08
TO–236AB 3 1
• FM modulators Cathode Anode
1 SOT–23
Two families of devices are available: Abrupt Junction and Hyper 2 STYLE 8
Abrupt Junction. The Abrupt Junction family includes devices
suitable for virtually all tuned–circuit and narrow–range tuning
applications throughout the spectrum. 3
1 2
2
1 STYLE 9
CASE 463–01 3
Typical Characteristics SOT–416/SC–90
Diode Capacitance versus Reverse Voltage
100 1000
70 1N5456A
C T , DIODE CAPACITANCE (pF)
50 MV1650
MV1638
1N5148
30
100
20
(See Tables 34
Thru 36)
10
7 10
5 TA = 25°C MV1628
f = 1 MHz
3
2 1
0.6 1 2 4 6 10 20 40 60 0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
1000 100
MV2109
MV2115 70
MMBV2109LT1
100
40
MMBV432LT1
MV104
10 20
TA = 25°C
MV2101 MV2105
f = 1 MHz
MMBV2101LT1 MMBV2105LT1
EACH DIODE
1 10
0.1 1 10 100 0.3 0.5 1 2 3 5 10 20 30
(See Tables 37 and 38) (See Table 39)
1–23
Tuning Diodes — Abrupt Junction (continued)
Table 34. General–Purpose Glass Abrupt Tuning Diodes

High Q Capacitance Ratio @ 4.0 Volts/60 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Cap Ratio Q
pF pF pF V(BR)R C4/C60 4.0 V, 50 MHz
Device(19) Min Nominal Max Volts Min Min
Case 51–02 — DO–204AA (DO–7)

1N5148 42.3 47 51.7 60 3.2 200

High Q Capacitance Ratio @ 2.0 Volts/30 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit very high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Cap Ratio Q
pF pF pF VR(BR)R C2/C30 4.0 V, 50 MHz
Device(20) Min Nominal Max Volts Min Min
Case 51–02 — DO–204AA (DO–7)

1N5446ARL 16.2 18 19.8 30 2.6 350
1N5448ARL 19.8 22 24.2 30 2.6 350
1N5456A 90 100 110 30 2.7 175
(19)Suffix A = 10.0%
(20)Suffix B = 5.0%

Capacitance Ratio @ 2.0 Volts/20 Volts
The following is a listing of axial leaded, general–purpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Cap Ratio Q
pF pF pF V(BR)R C2/C20 4.0 V, 50 MHz
Device Min Nominal Max Volts Min Typ
Case 51–02 — DO–204AA (DO–7)

MV1626 10.8 12 13.2 20 2.0 300
MV1628 13.5 15 16.5 20 2.0 250
MV1630 16.2 18 19.8 20 2.0 250
MV1634 19.8 22 24.2 20 2.0 250
MV1638 29.7 33 36.3 20 2.0 200
MV1648 73.8 82 90.2 20 2.0 150
MV1650 90 100 110 20 2.0 150
Table 37. General–Purpose Plastic Abrupt Tuning Diodes

The following is a listing of plastic package, general–purpose, abrupt tuning diodes. These devices exhibit high Q
characteristics.
CT @ VR = 4.0 V, 1.0 MHz
Cap Ratio Q
Case 182–02 — TO–226AC (TO–92) — 2–Lead

MV2101 6.1 6.8 7.5 30 2.5 400
MV2104 10.8 12 13.2 30 2.5 350
MV2105 13.5 15 16.5 30 2.5 350
MV2108 24.3 27 29.7 30 2.5 250
MV2109 29.7 33 36.3 30 2.5 200
MV2111 42.3 47 51.7 30 2.5 150
MV2115 90 100 110 30 2.6 100
1–24
Tuning Diodes — Abrupt Junction (continued)
Table 38. Surface Mount Abrupt Tuning Diodes

The following is a listing of surface mount abrupt junction tuning diodes intended for general–purpose variable capacitance
circuit applications.
CT @ VR = 4.0 V, 1.0 MHz Q
Cap Ratio
Case 318–08 — DO–236AB (SOT–23)
MMBV2101LT1 6.1 6.8 7.5 30 2.5 400
MMBV2103LT1 9.0 10 11 30 2.5 350
MMBV2105LT1 13.5 15 16.5 30 2.5 350
MMBV2107LT1 19.8 22 24.2 30 2.5 300
MMBV2108LT1 24.3 27 29.7 30 2.5 250
MMBV2109LT1 29.7 33 36.3 30 2.5 200
Table 39. Abrupt Tuning Diodes for FM Radio — Dual

The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22)
Cap Ratio Q
pF pF C3/C30 3.0 V, 50 MHz V(BR)R Device
Device Min Max Volts Min Min Volts Marking Style
Case 29–04 — TO–226AA (TO–92)
MV104 37 42 3.0 2.5 100 32 — 15
Case 318–08 — TO–236AB (SOT–23)
MMBV432LT1 43 48.1 2.0 1.5(21) 100 14 M4B 9
(21)C2/C8
(22)Each Diode
1–25
Tuning Diodes —
2
Hyper–Abrupt Junction
CASE 51–02 1 2
DO–204AA Cathode Anode
The Hyper–Abrupt family exhibits higher capacitance, and a
(DO–7) STYLE 1
much larger capacitance ratio. It is particularly well suited for
wider–range applications such as AM/FM radio and TV tuning.
CASE 182–02 2 1
TO–226AC Anode Cathode
(TO–92) STYLE 1
1
2
3
CASE 318–08 3 1
TO–236AB Cathode Anode
1 SOT–23 STYLE 8
2
4
CASE 318E–04 1 2, 4
1
2 SOT–223
3 STYLE 2
Typical Characteristics
Diode Capacitance versus Reverse Voltage
20 40
18 36
16 32
C T , CAPACITANCE (pF)
14 MMBV105GLT1 28 MMBV109LT1
12 24 MV209
10 20
8 TA = 25°C 16
6 f = 1 MHz 12
4 8
2 4
0 0
0.3 0.5 1 2 3 5 10 20 30 1 3 10 30 100
Figure 1. Diode Capacitance Figure 2. Diode Capacitance
1–26
Tuning Diodes — Hyper–Abrupt Junction (continued)
40 10
9

32 8
7
24 MMBV409LT1 6
MV409 MMBV809LT1
5
16 4
3
8 2
1
0 0
1 3 10 20 0.5 1 2 3 4 5 8 10 15
40 50
36

32 40
28 MMBV3102LT1 f = 1 MHz
24 30 MMBV609LT1
20
16 20
12 TA = 25°C
8 f = 1 MHz 10
4
0 0
0.3 0.5 1 2 3 5 10 20 30 1 2 3 5 7 10 20 30 40

Each Die
MV7005T1
1000
500
500 300 TA = 25°C
f = 1 MHz
200
100
100 MV1405
50
50 30
MV1403
20
10 MV1404
10 MV7404T1
1 3 5 7 9 1 2 3 4 5 6 7 8 9 10
Figure 7. Capacitance versus Reverse Voltage Figure 8. Diode Capacitance versus Reverse Voltage
1–27
Tuning Diodes — Hyper–Abrupt Junction (continued)
Table 40. Hyper–Abrupt Tuning Diodes for Telecommunications — Single

The following is a listing of hyper–abrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz) Cap Ratio @ VR Q
CV
pF pF 3.0 V 50 MHz V(BR)R Device Case Curve
Device Min Max Volts Min Max Volts Min Max Volts Marking Style Fig
Case 182–02 — TO–226AC (TO–92)

MV209 26 32 3.0 5.0 6.5 3/25 200 — 30 — 1 2
MV409 26 32 3.0 1.5 2.0 3/8 200 — 20 — 1 3
Case 318–08 — TO–236AB (SOT–23)
MMBV105GLT1 1.5 2.8 25 4.0 6.5 3/25 200 — 30 M4E 8 1
MMBV109LT1 26 32 3.0 5.0 6.5 3/25 200 — 30 M4A 8 2
MMBV409LT1 26 32 3.0 1.5 1.9 3/8 200 — 20 X5 8 3
MMBV809LT1 4.5 6.1 2.0 1.8 2.6 2/8 300 — 20 5K 8 4
MMBV3102LT1 20 25 3.0 4.5 — 3/25 200 — 30 M4C 8 5
Case 419–02 — SC–70/SOT–323

MBV109T1 26 32 3.0 5.0 6.5 3/25 200 — 30 M4A 8 —
Table 41. Hyper–Abrupt Tuning Diodes for Communications — Dual

CT @ VR (f = 1.0 MHz) Cap Ratio @ VR Q
CV
pF pF 3.0 V 50 MHz V(BR)R Device Case Curve
Device Min Max Volts Min Max Volts Min Max Volts Marking Style Fig
Case 318–08 — TO–236AB (SOT–23)

MMBV609LT1 26 32 3.0 1.8 2.4 3/8 250 — 20 5L 9 6
Table 42. Hyper–Abrupt High Capacitance Voltage Variable Diode — Surface Mount
The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring
large tuning capacitance.
CT @ f = 1.0 MHz
CV
V(BR)R IR Min Max Cap Ratio Q Curve
Device Volts nA pF pF Min Min Style Figure
Case 318E–04— SOT–223

Pinout: 1–Anode, 2, 4–Cathode, 3–NC
MV7005T1 15 100 400 520 12(26) 150(28) 2 8
MV7404T1 12 100 96 144 10(27) 200(29) 2 11
Table 43. Hyper–Abrupt High Capacitance Tuning Diodes — Axial Lead Glass Package
CT @ VR
Cap Ratio Q CV
pF pF C2/C10 2.0 V, 1.0 MHz V(BR)R Curve
Device Min Max Volts Min Min Volts Style Figure
Case 51–02 — DO–204AA (DO–7)

MV1404 96 144 2.0 10 200 12 1 11
MV1403 140 210 2.0 10 200 12 1 11
MV1405 200 300 2.0 10 200 12 1 11
(26) V = 1.0 V/V = 9.0 V
R R
(27) V = 2.0 V/V = 10 V
R R
(28) V = 1.0 V, f = 1.0 MHz
R
(29) V = 2.0 V, f = 1.0 MHz
R
1–28
Schottky Diodes CASE 182–02
CASE 425–04
TO–226AC
SOD–123
Schottky diodes are ideal for VHF and UHF mixer and detector (TO–92)
STYLE 1
applications as well as many higher frequency applications. 1 STYLE 1
They provide stable electrical characteristics by eliminating 2 1 2
2 1 Cathode Anode
the point–contact diode presently used in many applications. Cathode Anode
CASE 419–02 6 CASE 419B–01,

5
SC–70/SOT–323 4 STYLE 6
SOT–363
1
1 3 2
3
Single
3
CASE 318–08
TO–236AB
1 SOT–23
2
STYLE 8 STYLE 9 STYLE 11
1 3 1 21 2
Single
Series
3 3
Common Cathode
STYLE 12 STYLE 19
Cathode
1 2
Anode 1
3 Series
2 3
Cathode
Typical Characteristics
Capacitance versus Reverse Voltage
1 2.8
MBD101 TA = 25°C 2.4 TA = 25°C

MMBD101LT1
0.9 2
MMBD352LT1*
MMBD353LT1*
MMBD354LT1* 1.6 MBD301,
MMBD301LT1
0.8
1.2
0.8
0.7
0.4 MBD701, MMBD701LT1
0.6 0
0 1 2 3 4 0 5 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS) * EACH DIODE VR, REVERSE VOLTAGE (VOLTS)
(See Table 44)
1–29
Schottky Diodes (continued)
Table 44. Schottky Diodes

The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
CT @ VR VF @ 10 mA IR @ VR Minority
V(BR)R pF Volts nA Lifetime Device
Device Volts Max Max Max pS (TYP) Marking Style
Case 182–02 — TO–226AC (TO–92)
MBD701 70 1.0 @ 20 V 1.0 200 @ 35 V 15 — 1
MBD301 30 1.5 @ 15 V 0.6 200 @ 25 V 15 — 1
MBD101 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V — — 1
Case 318–08 — TO–236AB (SOT–23) – Single
BAS40LT1 40 5.0 @ 1.0 V 0.5 @ 30 mA 1000 @ 25 V — B1 8
BAS40–04LT1 40 5.0 @ 1.0 V 0.5 @ 30 mA 1000 @ 25 V — — 12
BAS70LT1 70 2.0 @ 0 V 0.75 100 @ 50 V — BE 8
BAT54ALT1 30 10 @ 1.0 V 0.4 2000 @ 25 V — — 12
BAT54LT1 30 10 @ 1.0 V 0.4 2000 @ 25 V — LV3 8
BAT54SLT1 30 10 @ 1.0 V 0.4 2000 @ 25 V — LD3 11
MMBD701LT1 70 1.0 @ 20 V 1.0 200 @ 35 V 15 5H 8
MMBD301LT1 30 1.5 @ 15 V 0.6 200 @ 25 V 15 4T 8
MMBD101LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 4M 8
Case 318–08 — TO–236AB (SOT–23) – Dual
BAS40–06LT1 40 5.0 @ 1.0 V 0.5 @ 30 mA 1000 @ 25 V — — 11
BAS70–04LT1(23) 70 2.0 @ 0 V 0.75 100 @ 50 V — — 12
MMBD352LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M5G 11
MMBD353LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M4F 19
MMBD354LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 M6H 9
MMBD355LT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V 15 MJ1 12
MMBD452LT1 30 1.5 @ 1.5 V 0.6 200 @ 25 V 15 5N 11
Case 425–04 — (SOD–123)
BAT54T1 30 10 @ 1.0 V 0.4 2000 @ 25 V — — 1
MMSD701T1 70 1.0 @ 20 V 1.2 0.2 @ 35 V 15 5H 1
MMSD301T1 30 1.5 @ 15 V 0.6 0.2 @ 25 V 15 4T 1
MMSD101T1 4 1.0 @ 0 V 0.6 0.25 @ 3 V 15 4M 1
Case 419–02 — (SC–70/SOT–323) – Single
BAT54WT1 30 10 @ 1.0 V 0.4 2000 @ 25 V — — 2
MMBD330T1 30 1.5 @ 15 V 0.6 0.2 @ 25 V — 4T 2
MMBD770T1 70 1.0 @ 20 V 1.0 0.2 @ 35 V — 5H 2
Case 419–02 — (SC–70/SOT–323) – Dual
BAT54SWT1 30 10 @ 1.0 V 0.4 2000 @ 25 V — — 9
MMBD352WT1 7.0 1.0 @ 0 V 0.6 250 @ 3.0 V — M5 9
MMBD717LT1(23) 20 2.5 @ 1.0 V 0.37 @ 1 mA 0.2 @ 10 V — B3 2
(23) Common Anode
Case 419B–01 — SOT–363 – Duals

V(BR)R IR VF
CT((30)) trr
Min @ IBR Max @ VR Min Max @ IF Max Max Case
Device Marking Volts (µA) (µA) Volts Volts Volts (mA) (pF) (ns) Style
MBD54DWT1 BL 30 10 2.0 25 — 0.32 1.0 1.0 5.0 6
MBD110DWT1 M4 7.0 10 200 25 — 0.6 1.0 1.0 — 6
MBD330DWT1 T4 30 10 200 25 — 0.4 1.0 1.5 — 6
MBD770DWT1 H5 70 10 200 25 — 0.5 1.0 1.0 — 6
(30) V = 0 V, f = 1.0 MHz
R
1–30
Switching
Diodes
Small–signal switching diodes are intended for low current CASE 29–04 CASE 182–02
TO–226AA TO–226AC
switching and steering applications. Hot–Carrier, PIN and 1
1 (TO–92) (TO–92)
general–purpose diodes allow a wide selection for specific 2
3 2
application requirements.
STYLE 3
Typical Characteristics 1 2
Capacitance versus Reverse Voltage STYLE 1
3 2 1
10 Cathode Anode
STYLE 4
TA = 25°C
f = 1 MHz 1 2
2 3
MPN3404 3
CASE 318–08
1 TO–236AB
1
0.5 SOT–23
MMBV3401LT1 MPN3700 2
0.3
20 V MAX VR MMBV3700LT1
0.2 STYLE 8 STYLE 12
0
0 12 18 24 30 36 42 48 54 1 3 1 2
VR, REVERSE VOLTAGE (VOLTS) SINGLE
(See Table 45) 3
COMMON ANODE
STYLE 1 STYLE 9 STYLE 18

1 2 1 2 2 3
Cathode Anode
SINGLE
CASE 425–04 3
SOD–123 COMMON CATHODE
STYLE 11 STYLE 19
ANODE CATHODE 1 2 1 2
3 3 3
3 3
2 SERIES SERIES
1
CASE 463–01
SOT–416/SC–90
3
1 2 1 2 CASE 318D–04
CATHODE ANODE SC–59 2
STYLE 4 STYLE 5 1
STYLE 2 STYLE 4
STYLE 2 3
CASE 419–02 2 3 2 3
1 3 SC–70/SOT–323 SINGLE SINGLE
1
SINGLE 2
STYLE 5 STYLE 4 STYLE 3 STYLE 5
1 2 1 2 1 2 1 2
3 3 3 3
COMMON CATHODE COMMON ANODE COMMON CATHODE COMMON ANODE
1–31
Switching Diodes (continued)
Table 45. PIN Switching Diodes

The following PIN diodes are designed for VHF band switching and general–purpose low current switching applications.
CT @ VR @ 1.0 MHz Series

V(BR)R IR @ VR Resistance
Volts pF µA Ohm Device
Device Min Max Volts Max Max Marking Style
Case 182–02 — TO–226AC (TO–92)
MPN3700 200 1.0 20 0.1 @ 150 1.0 @ 10 mA — 1
MPN3404 20 2.0 15 0.1 @ 25 V 0.85 @ 10 mA — 1
Case 318–08 — TO–236AB (SOT–23)
MMBV3700LT1 200 1.0 20 0.1 @ 150 1.0 @ 10 mA 4R 8
MMBV3401LT1 35 1.0 20 0.1 @ 25 V 0.7 @ 10 mA 4D 8
Table 46. General–Purpose Signal and Switching Diodes — Single

The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.
V(BR)R IR VF CT(30) trr

Case 318–08 — TO–236AB (SOT–23)

BAS21LT1 JS 250 100 0.1 200 — 1.0 100 5.0 50 8
MMBD914LT1 5D 100 100 5.0 75 — 1.0 10 4.0 4.0 8
BAS16LT1 A6 75 100 1.0 75 — 1.0 50 2.0 6.0 8
MMBD6050LT1 5A 70 100 0.1 50 0.85 1.1 100 2.5 4.0 8
BAL99LT1 JF 70 100 2.5 70 — 1.0 50 1.5 6.0 18
Case 318D–04 — SC–59
M1MA151AT1 MA 40 100 0.1 35 — 1.2 100 2.0 3.0 4
M1MA151KT1 MH 40 100 0.1 35 — 1.2 100 2.0 3.0 2
Case 419–02 — SC–70/SOT–323

BAS16WT1 A6 75 1.0 0.02 20 — 1.25 150 2.0 6.0 2
M1MA141KT1 MH 40 100 0.1 35 — 1.2 100 2.0 3.0 2
M1MA142KT1 MI 80 100 0.1 75 — 1.2 100 2.0 3.0 2
M1MA174T1 J6 100 100 5.0 75 — 1.0 10 4.0 4.0 2
Case 425–04— SOD–123

MMSD914T1 5D 100 100 5.0 75 — 1.0 10 4.0 4.0 1
MMSD71RKT1 6S — — 0.5 80 — 1.2 100 2.0 4.0 1
(30) V = 0 V, f = 1.0 MHz
R
1–32
Table 47. General–Purpose Signal and Switching Diodes — Dual

The following is a listing of small–signal switching diodes in surface mount packages. These diodes are intended for low
current switching and signal steering applications.

Case 318–08 — TO–236AB (SOT–23)

MMBD7000LT1 M5C 100 100 1.0 50 0.75 1.1 100 1.5 4.0 11
MMBD2836LT1 A2 75 100 0.1 50 — 1.0 10 4.0 4.0 12
MMBD2838LT1 A6 75 100 0.1 50 — 1.0 10 4.0 4.0 9
BAV70LT1 A4 70 100 5.0 70 — 1.0 50 1.5 6.0 9
BAV99LT1 A7 70 100 2.5 70 — 1.0 50 1.5 4.0 11
BAW56LT1 A1 70 100 2.5 70 — 1.0 50 2.0 6.0 12
MMBD6100LT1 5BM 70 100 0.1 50 0.85 1.1 100 2.5 4.0 9
BAV74LT1 JA 50 5.0 0.1 50 — 1.0 100 2.0 4.0 9
MMBD2835LT1 A3 35 100 0.1 30 — 1.0 10 4.0 4.0 12
MMBD2837LT1 A5 35 100 0.1 30 — 1.0 10 4.0 4.0 9
Case 318D–04 — SC–59
M1MA151WAT1 MN 40 100 0.1 35 — 1.2 100 15 10 5
M1MA151WKT1 MT 40 100 0.1 35 — 1.2 100 2.0 3.0 3
Case 419–02 — SC–70/SOT–323

M1MA142WKT1 MU 80 100 0.1 75 — 1.2 100 2.0 3.0 5
M1MA142WAT1 MO 80 100 0.1 75 — 1.2 100 15 10 4
BAW56WT1 A1 70 100 2.5 70 — 1.0 50 2.0 6.0 4
BAV70WT1 A4 70 100 5.0 70 — 1.0 50 1.5 6.0 5
BAV99WT1 A7 70 100 2.5 70 — 1.0 50 1.5 6.0 9
BAV99RWT1 F7 70 100 2.5 70 — 1.0 50 1.5 6.0 10
M1MA141WKT1 MT 40 100 0.1 35 — 1.2 100 2.0 3.0 5
M1MA141WAT1 MN 40 100 0.1 35 — 1.2 100 15 10 4
Case 463–01 — SOT–416/SC–90 (Common Anode)
DAP222 P9 80 100 100 70 — 1.2 100 3.5 4.0 4
Case 463–01 — SOT–416/SC–90 (Common Cathode)
DAN222 N9 80 100 100 70 — 1.2 100 3.5 4.0 5
Table 48. Low–Leakage Medium Speed Switching Diodes — Single

Device Marking Volts (µA) (nA) Volts Volts Volts (mA) (pF) (ns) Style
Case 318–08 — TO–236AB (SOT–23)

BAS116LT1 JV 75 100 5.0 75 — 1.0 10 2.0 3000 8
MMBD1000LT1 AY 30 100 0.5 30 — 0.95 10 2.0 3000 6
Case 419–02 — (SOT–323)/(SC–70)
MMBD2000T1 DH 30 100 0.5 30 — 0.95 10 2.0 3000 2
Case 318D–04 — (SC–59)
MMBD3000T1 XP 30 100 0.5 30 — 0.95 10 2.0 3000 2
Case 425–04 — (SOD–123)
MMSD1000T1 4K 30 100 0.5 30 — 0.95 10 2.0 3000 1
1–33
Table 49. Low–Leakage Medium Speed Switching Diodes — Dual


Device Marking Volts (µA) (nA) Volts Volts Volts (mA) (pF) (ns) Style
Case 318–08 — TO–236AB (SOT–23)

BAV170LT1 JX 70 100 5.0 70 — 1.0 10 2.0 3000 9
BAV199LT1 JY 70 100 5.0 70 — 1.0 10 2.0 3000 11
BAW156LT1 JZ 70 100 5.0 70 — 1.0 10 2.0 3000 12
MMBD1005LT1 A3 30 100 0.5 30 — 0.95 10 2.0 3000 12
MMBD1010LT1 A5 30 100 0.5 30 — 0.95 10 2.0 3000 9
Case 419–02 — (SOT–323)/(SC–70) — DUAL
MMBD2005T1 DI 30 100 0.5 30 — 0.95 10 2.0 3000 4
MMBD2010T1 DP 30 100 0.5 30 — 0.95 10 2.0 3000 5
Case 318D–04 — (SC–59) — DUAL
MMBD3005T1 XQ 30 100 0.5 30 — 0.95 10 2.0 3000 5
MMBD3010T1 XS 30 100 0.5 30 — 0.95 10 2.0 3000 3
(30) V = 0 V, f = 1.0 MHz
R
1–34
Multiple
Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast
switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost,
higher reliability and space savings.
14 16
1 1
CASE 751A–03 CASE 751B–05

SO–14 SO–16
PLASTIC PLASTIC
Diode Array Diagrams
1 4 7
11 3 8 Diode 14
7 6 5 4 3 2 1
Dual 10 Array Isolated
8 9 10 13 14 1 4 5 6 7 2 3 5 7 8 9 11 12
Diode (Common 7 Diode
Array NC Pin 1, 4, 6, 10, 13 Array 8 9 10 11 12 13 14
12 2 Anode)
2 5
1 1 8
16 Dual 8
Diode 2 3 5 7 8 9 11 12 Diode 2 3 11 12 4 5 9 10
Array Array
14 14 7
NC Pin 4,6,10,13 NC Pin 6, 13

3 6
14
8 Diode 1 2 3 4 5 6 7 8
Array Isolated
2 3 5 7 8 9 11 12
(Common 8 Diode
Array 16 15 14 13 12 11 12 9
Cathode) NC Pin 1, 4, 6, 10, 13
Table 50. Diode Arrays

Case 751A–03— SO–14
MMAD130 Dual 10 Diode Array 1
MMAD1103 16 Diode Array 2
MMAD1105 8 Diode Common Cathode Array 3
MMAD1106 8 Diode Common Anode Array 4
MMAD1107 Dual 8 Diode Array 5
MMAD1109 7 Isolated Diode Array 7
Case 751B–05 — SO–16
MMAD1108 8 Isolated Diode Array 6
1–35
 3
3 4
1 2 1
2
2 1 3
CASE 318–08 CASE 318D–04 CASE 318E–04

TO–236AB SC–59 SOT–223
SOT–23
Plastic–Encapsulated 6
5
4
3
Surface Mount Devices 1

2 1
2
3 2
Energy. It’s something Motorola is putting a lot of energy 1
CASE 318G–02 CASE 419–02 CASE 425–04
into helping save. That’s why we’re introducing our Green- TSOP–6 SC–70/SOT–323 SOD–123
Line portfolio of devices, featuring energy–conserving traits
superior to those of our existing line of standard parts for the
same usage. GreenLine devices can actually help reduce • Small Signal HDTMOS: These devices provide our
the power demands of your products. lowest ever drain–source resistance versus package size.
Lower rDS(on) means less wasted energy through dissipation
Wide Range of Applications loss, making them especially effective for low–current
Currently, our portfolio consists of three families. applications where energy conservation is crucial, such as low
current switchmode power supplies, uninterruptable power
• Low–Leakage Switching Diodes: With reverse leakage supplies (UPS), power management systems, and bias
specifications guaranteed to 500 pA, they help extend battery switching. This makes them ideal for portable computer–type
life, making them ideal for small battery–operated systems in products or any system where the combination of power
which standby power is essential. Applications include ESD management and energy conservation is key.
protection, reverse voltage protection, and steering logic.
Save Energy — Save Money
• Bipolar Output Driver Transistors: Offering ultra–low In an increasingly power–hungry world, Motorola’s Green-
collector saturation voltage, they deliver more energy to the Line portfolio makes powerful sense. So much sense that we
intended load with less power wasted through dissipation loss. plan to continue adding devices to the portfolio. Chances
They are especially effective in today’s lower voltage are, there are Motorola GreenLine devices applicable to one
battery–powered applications, and prolong battery life in or more of your products — ones that can help save energy,
portable and hand–held communications and personal digital dollars — and the environment.
equipment.
Table 51. Bipolar Driver Transistor — PNP

These offer ultra–low collector saturation voltage.
hFE@ IC
Device Type Marking Case V(BR)CEO VCE(sat) VBE(sat) Min Max mA
MMBT1010LT1 GLP SOT–23 15 0.1 1.1 300 600 100
MSD1010T1 GLP SC–59 15 0.1 1.1 300 600 100
1–36
GreenLine (continued)
Table 52. Low Leakage Switching Diodes

These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
V(BR)R IR
Min @ IBR Max @ VR
Device Type Marking Case Style Volts (µA) (nA) Volts
MMBD1000LT1 AY SOT–23 Single 30 100 0.5 30
MMBD1005LT1 A3 SOT–23 Dual Anode 30 100 0.5 30
MMBD1010LT1 A5 SOT–23 Dual Cathode 30 100 0.5 30
MMBD2000T1 DH SC–70 Single 30 100 0.5 30
MMBD2005T1 DI SC–70 Dual Anode 30 100 0.5 30
MMBD2010T1 DP SC–70 Dual Cathode 30 100 0.5 30
MMBD3000T1 XP SC–59 Single 30 100 0.5 30
MMBD3005T1 XQ SC–59 Dual Anode 30 100 0.5 30
MMBD3010T1 XS SC–59 Dual Cathode 30 100 0.5 30
MMSD1000T1 4K SOD–123 Single 30 100 0.5 30
Table 53. Small Signal HDTMOS MOSFETs

These provide the lowest drain–source resistance versus package size.
RDS(on) Ω Max VGS(th) Switching Time
@Vgs1 @Vgs2 @Vgs3 Volts Volts t(on) t(off)
Device Type Marking Channel (10 V) (4.5 V) (2.5 V) VDSS Min Max ns ns Style
Case 318–08 — TO–236AB (SOT–23) — P–Channel and N–Channel
2N7002LT1 702 N 7.5 — — 60 1.0 2.5 — — 21
BSS84LT1 PD P — 10 — 50 0.8 2.0 2.5 16 21
BSS123LT1 SA N 6.0 — — 100 0.8 2.8 20 40 21
BSS138LT1 J1 N — 3.5 — 50 0.5 1.5 20 20 21
MMBF0201NLT1 N1 N 1.0 1.4 — 20 1.0 2.4 2.5 15 21
MMBF0202PLT1 P3 P 1.4 3.5 — 20 1.0 2.4 2.5 16 21
MGSF1N02LT1 — N 0.085 0.125 — 20 1.0 2.4 2.5 16 21
MGSF1N03LT1 — N 0.10 0.145 — 30 1.0 2.4 2.5 16 21
MGSF1P02LT1 — P 3.5 0.5 — 20 1.0 2.4 2.5 16 21
MGSF1P02ELT1 — P 0.16 0.21 — 20 0.7 1.2 2.5 15 21
Case 318G–02 — TSOP–6 — P–Channel and N–Channel
MGSF3441VT1 — P — 0.10 0.135 20 0.45 — 27 52 1
MGSF3441XT1 — P — 0.10 0.135 20 0.45 — 27 52 1
MGSF3442VT1 — N — 0.07 0.095 20 0.6 — 8.0 36 1
MGSF3442XT1 — N — 0.07 0.095 20 0.6 — 8.0 36 1
MGSF3454VT1 — N 0.065 0.095 — 30 1.0 — 10 20 1
MGSF3454XT1 — N 0.065 0.095 — 30 1.0 — 10 20 1
MGSF3455VT1 — P 0.10 0.19 — 30 1.0 — 10 20 1
MGSF3455XT1 — P 0.10 0.19 — 30 1.0 — 10 20 1
Case 419–02 — SC–70/SOT–323
MMBF2202PT1 P3 P 2.2 3.5 — 20 1.0 2.4 2.5 16 7
MMBF2201NT1 N1 N 1.0 1.4 — 20 1.0 2.4 2.5 15 7
1–37
Small Signal 6 3
5
Multi–integrated Devices 4
1 1
2 2
3
CASE 419B–01 CASE 318–08
SOT–363 SOT–23
VCC (4) Vout (3)
R1 Vin 1.0 k
6.8 V
Q1 (1)
33 k
R2
GND (2)
R3 Vref (6)
MDC3105LT1
Q2 Iout (1)
VENBL
(5) R4
R5
Q4
R6
GND (2) and (3)

MDC5001T1
INTERNAL CIRCUIT DIAGRAMS
Table 54. Low Voltage Bias Stabilizer

A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field
effect transistors.
VCC (Volts) ICC Vref ∆Vref
Device Type Marking Min Max µA Volts Volts
Case 419B–01 — SOT–363

MDC5001T1 E6 1.8 10 200 2.1 ± 50
Table 55. Integrated Relay/Solenoid Driver

Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts) Vin (Volts)
Vsat Iin IC(on)
Device Type Min Max Min Max (Volts) (mA) (mA)
Case 318–08 — SOT–23

MDC3105LT1 2.0 5.5 2.0 5.5 0.4 2.5 250
1–38
Section 2
Plastic-Encapsulated
Transistors
In Brief . . .
Motorola’s plastic transistors and diodes encompass
hundreds of devices spanning the gamut from
general-purpose amplifiers and switches with a wide variety
of characteristics to dedicated special-purpose devices for
the most demanding applications. The popular TO-92,
1-Watt TO-92 and TO-116 combine proven reliability CASE 29-04 CASE 29-05
performance and economy for through-the-hole 1 (TO-226AA) 1 (TO-226AE)
manufacturing, while the SOT-23, SC-59, SC-70/SOT-323, 2 TO-92 2 1 WATT TO-92
3 3
SC–90/SOT–416, SOT-223, and SO-16 offer the same
solutions for surface mount manufacturing.
As an additional service to our customers Motorola will, 3
upon request, supply many of these devices in tape and reel 3 4
for automatic insertion. 1
2 1
Contact your Motorola representative for ordering informa- 2 1
2
3
tion.
CASE 318-08 CASE 318D-04 CASE 318E-04
This section contains both single and multiple plastic-
(TO-236AB) SC-59 (TO-261AA)
encapsulated transistors. SOT-23 SOT-223
NOTE: All SOT-23 package devices have had a “T1” suffix
NOTE: added to the device title. 3 3
1 2
1
2
CASE 419-02 CASE 463-01
SC-70/SOT-323 SC-90/SOT-416
16
14
1
1
CASE 646-06 CASE 751B-05

(TO-116) SO-16
Not to Scale
Motorola Small–Signal Transistors, FETs and Diodes Device Data 2–1

EMBOSSED TAPE AND REEL
SOT-23, SC-59, SC-70/SOT-323, SC–90/SOT–416, SOT-223 and SO-16 packages are available only in
Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59,
SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information).
SOT-23: available in 8 mm Tape and Reel

Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.
Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/10,000 unit reel.
SC-59: available in 8 mm Tape and Reel

SC-70/ available in 8 mm Tape and Reel

SOT-323: Use the device title (which already includes the “T1” suffix) to order the 7 inch/3000 unit reel.
SOT-223: available in 12 mm Tape and Reel

Replace the “T1” suffix in the device title with a “T3” suffix to order the 13 inch/4000 unit reel.
SO-16: available in 16 mm Tape and Reel

Add an “R1” suffix to the device title to order the 7 inch/500 unit reel.
Add an “R2” suffix to the device title to order the 13 inch/2500 unit reel.
RADIAL TAPE IN FAN FOLD BOX OR REEL

TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels.
Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in
printed circuit boards.
TO-92: available in Fan Fold Box

Add an “RLR” suffix and the appropriate Style code* to the device title to order the Fan Fold box.
available in 365 mm Radial Tape Reel

Add an “RLR” suffix and the appropriate Style code* to the device title to order the Radial Tape
Reel.
*Refer to Section 6 on Packaging for Style code characters and additional information on ordering
*requirements.
DEVICE MARKINGS/DATE CODE CHARACTERS

SOT-23, SC-59, SC-70/SOT-323, and the SC–90/SOT–416 packages have a device marking and a date
code etched on the device. The generic example below depicts both the device marking and a representa-
tion of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC D
The “D” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the
part was manufactured.
2–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors 2N3903

NPN Silicon
2N3904*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage VCEO 40 Vdc
Collector – Base Voltage VCBO 60 Vdc
Emitter – Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS(1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 60 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current IBL — 50 nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current ICEX — 50 nAdc
1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width v300 ms; Duty Cycle v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2

2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain(1) hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 20 —
2N3904 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 35 —

2N3904 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 50 150

2N3904 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 30 —

2N3904 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 15 —

2N3904 30 —
Collector – Emitter Saturation Voltage(1) VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc — 0.3
Base – Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95
SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 250 —
2N3904 300 —
Output Capacitance Cobo — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 8.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0
2N3904 1.0 10
Voltage Feedback Ratio hre X 10– 4
2N3904 0.5 8.0
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 50 200
2N3904 100 400
Output Admittance hoe 1.0 40 mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 — 6.0
2N3904 — 5.0
SWITCHING CHARACTERISTICS
Delay Time ((VCC = 3.0 Vdc, VBE = 0.5 Vdc, td — 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 ts — 175 ns
IB1 = IB2 = 1.0 mAdc) 2N3904 — 200
Fall Time tf — 50 ns
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2N3903 2N3904
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275
10 k 10 k
0
– 0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
– 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data

2N3903 2N3904
500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200
100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)
50 50
30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time Figure 6. Rise Time
500 500
t′s = ts – 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)
t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20
10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 7. Storage Time Figure 8. Fall Time
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200 W 10 IC = 0.5 mA

8 IC = 50 mA
IC = 0.5 mA
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 mA
IC = 50 mA 6
4
4
2 SOURCE RESISTANCE = 500 W 2

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Figure 10.

2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

50
200
h fe , CURRENT GAIN
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
Figure 11. Current Gain Figure 12. Output Admittance
20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
2.0
h FE, DC CURRENT GAIN (NORMALIZED)
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain

2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8 0 – 55°C TO +25°C

VBE @ VCE =1.0 V
0.6 – 0.5
– 55°C TO +25°C
0.4 – 1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 – 1.5 qVB FOR VBE(sat)
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

MOTOROLA

PNP Silicon
2N3906*
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol Value Unit
CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA)
Total Power Dissipation @ TA = 60°C PD 250 mW
Temperature Range
THERMAL CHARACTERISTICS(1)

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
1. Indicates Data in addition to JEDEC Requirements.

2.0%.
REV 2

2N3905 2N3906
ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3905 30 —
2N3906 60 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 40 —

2N3906 80 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 50 150

2N3906 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 30 —

2N3906 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 15 —

2N3906 30 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) — 0.25
(IC = 50 mAdc, IB = 5.0 mAdc — 0.4
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95

2N3906 250 —
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N3906 2.0 12
2N3906 0.1 10
2N3906 100 400
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 1.0 40
2N3906 3.0 60
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 — 5.0
2N3906 — 4.0
Delay Time ((VCC = 3.0 Vdc, VBE = 0.5 Vdc, td — 35 ns
Storage Time 2N3905 ts — 200 ns
2N3906 — 225
3 0 Vdc,
(VCC = 3.0 Vdc IC = 10 mAdc
mAdc,
Fall Time IB1 = IB2 = 1.0 mAd 2N3905 tf — 60 ns
2N3906 — 75

2N3905 2N3906
3V 3V
+9.1 V < 1 ns
275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0 Cobo
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
100 100
70 70
TIME (ns)
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 5. Turn – On Time Figure 6. Fall Time

2N3905 2N3906
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 12
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 W IC = 0.5 mA

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA
1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)
Figure 7. Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
70
50
h fe , DC CURRENT GAIN
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 10
7.0
10
7.0 5.0
5.0
3.0 3.0
2.0 2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

2N3905 2N3906
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)
0
0.6 – 55°C TO +25°C
– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
0.2 qVB FOR VBE(sat)
– 1.5
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
General Purpose Transistors

NPN Silicon 2N4123
2N4124
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
Rating Symbol 2N4123 2N4124 Unit CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage VCEO 30 25 Vdc
Collector – Base Voltage VCBO 40 30 Vdc
Temperature Range
THERMAL CHARACTERISTICS

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IE = 0) 2N4123 30 —
2N4124 25 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = 10 mAdc, IE = 0) 2N4123 40 —
2N4124 30 —
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO — 50 nAdc
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current IEBO — 50 nAdc

(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2N4123 2N4124
ON CHARACTERISTICS
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123 50 150
2N4124 120 360
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123 25 —

2N4124 60 —
Collector – Emitter Saturation Voltage(1) VCE(sat) — 0.3 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage(1) VBE(sat) — 0.95 Vdc


2N4124 300 —
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Collector–Base Capacitance Ccb — 4.0 pF

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) 2N4123 50 200
2N4124 120 480
Current Gain — High Frequency |hfe| —
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2.5 —
2N4124 3.0 —
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123 50 200

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124 120 480
Noise Figure NF dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, 2N4123 — 6.0
f = 1.0 kHz) 2N4124 — 5.0
10 200
7.0
100 ts
5.0 70
CAPACITANCE (pF)
50 td
TIME (ns)
Cibo
3.0 30 tf tr
20
2.0 Cobo
VCC = 3 V
10.0 IC/IB = 10
7.0 VEB(off) = 0.5 V
1.0 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 1. Capacitance Figure 2. Switching Times

2N4123 2N4124
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12 14
SOURCE RESISTANCE = 200 W f = 1 kHz
IC = 1 mA
10 IC = 1 mA 12

SOURCE RESISTANCE = 200 W
10 IC = 0.5 mA
8
IC = 0.5 mA IC = 50 mA
8
6 IC = 100 mA
SOURCE RESISTANCE = 1 kΩ
IC = 50 mA 6
4
4

IC = 100 mA
0 0
0.1 0.2 0.4 1 2 4 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (kΩ)
Figure 3. Frequency Variations Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300 100
50
200
hfe , CURRENT GAIN
20
100 10
70 5
50
2
30 1
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
20 10
7.0
10
hie , INPUT IMPEDANCE (kΩ )
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10

2N4123 2N4124
STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
TJ = 25°C
0.8
IC = 1 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0 VBE(sat) @ IC/IB = 10 0.5 +25°C to +125°C
qVC for VCE(sat)
V, VOLTAGE (VOLTS)
0.8 0
– 55°C to +25°C
VBE @ VCE = 1 V
0.6 – 0.5
– 55°C to +25°C
0.4 – 1.0
VCE(sat) @ IC/IB = 10 +25°C to +125°C
0.2 – 1.5 qVB for VBE(sat)
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
Figure 11. “On” Voltages Figure 12. Temperature Coefficients

MOTOROLA
Amplifier Transistor
PNP Silicon
2N4125
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO 30 — Vdc
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)

(VCB = 20 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
REV 2

2N4125
ON CHARACTERISTICS
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 50 150
(IC = 50 mAdc, VCE = 1.0 Vdc) 25 —
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.4
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 200 —
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 10
Collector–Base Capacitance Ccb pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) — 4.5
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 200
Current Gain — High Frequency |hfe| —
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2.0 —
Noise Figure NF dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) — 5.0
10 200
7.0 ts
100
5.0 Cobo 70 td
CAPACITANCE (pF)
50 tr
TIME (ns)
Cibo
3.0 30 tf
20
2.0
10.0 VCC = 3.0 V
IC/IB = 10
7.0 VBE(off) = 0.5 V
1.0 5.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 1.0 2.0 3.0 5.0 10 20 30 50 100 200
Figure 1. Capacitance Figure 2. Switching Times

2N4125
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = – 5.0 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
5.0 12
SOURCE RESISTANCE = 200 W f = 1 kHz IC = 1 mA
IC = –1 mA
10
4.0

IC = – 0.5 mA 8.0
3.0
SOURCE RESISTANCE = 2 kΩ
IC = – 50 mA 6.0
2.0
4.0 IC = 50 mA
1.0 SOURCE RESISTANCE = 2 kΩ IC = 100 mA
IC = –100 mA 2.0
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
Figure 3. Frequency Variations Figure 4. Source Resistance
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25°C
300 100
70
50
200
hfe , CURRENT GAIN
30
100 20
70
10
50
7.0
30 5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
20 10
10 7.0
5.0
h ie , INPUT IMPEDANCE (k Ω)
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10

2N4125
2.0
TJ = +125°C
VCE = 1 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
TJ = 25°C
0.8
IC = 1 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0
0.5
0.8 qVC for VCE(sat) +25°C to +125°C
VBE @ VCE = 1 V
V, VOLTAGE (VOLTS)
– 55°C to +25°C
0
0.6
–0.5
0.4 +25°C to +125°C
–1.0 qVS for VBE(sat)
– 55°C to +25°C
0.2 VCE(sat) @ IC/IB = 10
–1.5
0 –2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
General Purpose Transistor

NPN Silicon
2N4264
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range
Thermal Resistance, Junction to Case RqJC 125 °C/W

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 15 —
(IC = 10 mAdc, IE = 0) 30 —
Emitter – Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 mAdc, IC = 0) 6.0 —
Base Cutoff Current IBEV µAdc

(VCE = 12 Vdc, VEB(off) = 0.25 Vdc) — 0.1
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C) — 10
Collector Cutoff Current ICEX nAdc
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc) — 100
REV 2

2N4264
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 25 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 40 160
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C) 20 —
(IC = 30 mAdc, VCE = 1.0 Vdc) 40 —
(IC = 100 mAdc, VCE = 1.0 Vdc)(1) 30 —
(IC = 200 mAdc, VCE = 1.0 Vdc)(1) 20 —

(IC = 10 mAdc, IB = 1.0 mAdc) — 0.22
(IC = 100 mAdc, IB = 10 mAdc)(1) — 0.35
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.8
(IC = 100 mAdc, IB = 10 mAdc)(1) 0.75 0.95

Current – Gain — Bandwidth Product fT 300 — MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
Delay Time ( CC = 10 Vdc, VEB(off) = 2.0 Vdc,
(V td — 8.0 ns
Rise Time IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C) tr — 15 ns
Storage Time VCC = 10 Vdc, (IC = 10 mAdc, for ts) ts — 20 ns
(IC = 100 mA for tf)
Fall Time (IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C) tf — 15 ns
Turn–On Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, ton — 25 ns

IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, toff — 35 ns
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
Storage Time (VCC = 10 Vdc, IC = 10 mA, ts — 20 ns
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
Total Control Charge (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc) QT — 80 pC
(Fig. 3, Test Condition A)
Figure 1. Switching Time Equivalent Test Circuit
Test VCC
ton toff
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
t1 t1 RC
mA V Ω Ω pF V V V V V1 V3
RB
A 10 3 3300 270 4 –1.5 10.55 –4.15 10.70 0 0
VEB(off) V2 CS
B 10 10 560 960 4 — — –4.65 6.55 < 2 ns < 2 ns
C 100 10 560 96 12 –2.0 6.35 –4.65 6.55
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

2N4264
CURRENT GAIN CHARACTERISTICS
100
2N4264
70 VCE = 1 V
h FE, DC CURRENT GAIN
TJ = 125°C
50
25°C
30 –15°C
– 55°C
20
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 2. Minimum Current Gain
270 Ω
3V
t1 8 pF C < COPT
+10 V C=0
∆V
0 CS < 4 pF C COPT
<1 ns 9.2 kΩ
PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% TIME
Figure 3. QT Test Circuit Figure 4. Turn–Off Waveform
NOTE 1
When a transistor is held in a conductive state by a base current, IB, If IB were suddenly removed, the transistor would continue to
a charge, QS, is developed or “stored” in the transistor. QS may be conduct until QS is removed from the active regions through an
written: QS = Q1 + QV + QX. external path or through internal recombination. Since the internal
Q1 is the charge required to develop the required collector current. recombination time is long compared to the ultimate capability of a
This charge is primarily a function of alpha cutoff frequency. QV is the transistor, a charge, QT, of opposite polarity, equal in magnitude, can
charge required to charge the collector–base feedback capacity. QX is be stored on an external capacitor, C, to neutralize the internal charge
excess charge resulting from overdrive, i.e., operation in saturation. and considerably reduce the turn–off time of the transistor. Figure 3
The charge required to turn a transistor “on” to the edge of saturation shows the test circuit and Figure 4 the turn–off waveform. Given QT
is the sum of Q1 and QV which is defined as the active region charge, from Figure 13, the external C for worst–case turn–off in any circuit is:
QA. QA = IB1tr when the transistor is driven by a constant current step C = QT/∆V, where ∆V is defined in Figure 3.
IC
(IB1) and IB1 < < .
hFE

2N4264
“ON” CONDITION CHARACTERISTICS
1.0
2N4264
VCE, MAXIMUM COLLECTOR–EMITTER
TJ = 25°C
0.8
IC = 10 mA 50 mA 100 mA 200 mA
VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.2 1.0

IC/IB = 10
Vsat , SATURATION VOLTAGE (VOLTS)
1.0 TJ = 25°C MAX VBE(sat) 0.5 (25°C to 125°C)

qVC for VCE(sat)
0.8 MIN VBE(sat) 0 (– 55°C to 25°C)
0.6 – 0.5
(25°C to 125°C)
0.4 MAX VCE(sat) – 1.0
qVB for VBE
(– 55°C to 25°C)
0.2 – 1.5
0 – 2.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0 40 80 120 160 200
Figure 6. Saturation Voltage Limits Figure 7. Temperature Coefficients

2N4264
DYNAMIC CHARACTERISTICS
200 200
VCC = 10 V IC/IB = 10
TJ = 25°C TJ = 25°C
100 100
TJ = 125°C
70 70
t d, DELAY TIME (ns)
VCC = 10 V
t r , RISE TIME (ns)

50 td @ VEB(off) = 3 V
50
30 30
2V
20 20 VCC = 3 V
10 0V 10
7.0 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
Figure 8. Delay Time Figure 9. Rise Time
50 200
TJ = 25°C VCC = 10 V
TJ = 125°C TJ = 25°C
IC/IB = 20 100 TJ = 125°C
30
t s , STORAGE TIME (ns)
IC/IB = 10 70
20 50
30 IC/IB = 20
20
10
IC/IB = 10
7.0 ts′ ^ ts – 1/8 tf 10
IB1 = IB2 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
10 1000
MAX 700 IC/IB = 10
TYP TJ = 25°C
500
7.0 Cibo TJ = 125°C
CAPACITANCE (pF)
300
Q, CHARGE (pC)
5.0 200
QT
100
VCC = 3 V
Cobo 70
3.0 50
VCC = 10 V QA
30 VCC = 3 V
2.0 20
0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (Vdc) IC, COLLECTOR CURRENT (mA)
Figure 12. Junction Capacitance Figure 13. Maximum Charge Data

MOTOROLA

NPN Silicon
2N4401*
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 0.1 mAdc, IE = 0)
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current IBEV — 0.1 µAdc

Collector Cutoff Current ICEX — 0.1 µAdc
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
REV 1

2N4400 2N4401
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4401 20 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4400 20 —

2N4401 40 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N4400 40 —

2N4401 80 —
(IC = 150 mAdc, VCE = 1.0 Vdc) 2N4400 50 150

2N4401 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc) 2N4400 20 —

2N4401 40 —
Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) — 0.4 Vdc
Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) — 0.75
Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc
Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) — 1.2

2N4401 250 —
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 6.5 pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 pF
Input Impedance hie k ohms
2N4401 1.0 15
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10–4
2N4401 40 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 µmhos
Delay Time ( CC = 30 Vdc, VBE = 2.0 Vdc,
(V td — 15 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr — 20 ns
Storage Time ( CC = 30 Vdc, IC = 150 mAdc,
(V ts — 225 ns
Fall Time IB1 = IB2 = 15 mAdc) tf — 30 ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200 Ω
200 Ω
+16 V DUTY CYCLE ≈ 2.0%
0 0
1.0 kΩ –14 V 1.0 kΩ CS* < 10 pF
– 2.0 V CS* < 10 pF
< 2.0 ns < 20 ns
Scope rise time < 4.0 ns – 4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time Figure 2. Turn–Off Time

2N4400 2N4401
TRANSIENT CHARACTERISTICS
25°C 100°C
30 10
7.0
VCC = 30 V
20 5.0
IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)
QT
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
5.0 0.5
Ccb 0.3
3.0 0.2 QA
2.0 0.1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances Figure 4. Charge Data
100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 30 tf
t, TIME (ns)
t, TIME (ns)
tr @ VCC = 10 V
td @ VEB = 2.0 V
20 td @ VEB = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
Figure 5. Turn–On Time Figure 6. Rise and Fall Times
300 100
ts′ = ts – 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
t s′, STORAGE TIME (ns)
30
100
20 IC/IB = 10
70
50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500

2N4400 2N4401
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
IC = 1.0 mA, RS = 150 Ω f = 1.0 kHz
IC = 500 µA, RS = 200 Ω RS = OPTIMUM
8.0 8.0
IC = 100 µA, RS = 2.0 kΩ RS = SOURCE IC = 50 µA

IC = 50 µA, RS = 4.0 kΩ RS = RESISTANCE IC = 100 µA
6.0 6.0 IC = 500 µA
IC = 1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects Figure 10. Source Resistance Effects

h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from both the 2N4400 and 2N4401 lines, and the
hfe and other “h” parameters for this series of transistors. To same units were used to develop the correspondingly num-
obtain these curves, a high–gain and a low–gain unit were bered curves on each graph.
300 50 k
2N4401 UNIT 1
200 2N4401 UNIT 2
hie , INPUT IMPEDANCE (OHMS)
20 k 2N4400 UNIT 1
2N4400 UNIT 2
hfe , CURRENT GAIN
10 k
100
5.0 k
70
2N4401 UNIT 1
50
2N4401 UNIT 2 2.0 k
2N4400 UNIT 1
30 2N4400 UNIT 2 1.0 k
20 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Figure 11. Current Gain Figure 12. Input Impedance
10 100
7.0
5.0 50
2N4401 UNIT 1
3.0 2N4401 UNIT 2
2N4400 UNIT 1 20
2.0 2N4400 UNIT 2
10
1.0
0.7 5.0
2N4401 UNIT 1
0.5 2N4401 UNIT 2
2.0 2N4400 UNIT 1
0.3 2N4400 UNIT 2
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance

2N4400 2N4401
3.0
VCE = 1.0 V
2.0 VCE = 10 V
h FE, NORMALIZED CURRENT GAIN
TJ = 125°C
1.0
25°C
0.7
0.5 – 55°C
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 + 0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.8 0 qVC for VCE(sat)
VOLTAGE (VOLTS)
– 0.5
0.6 VBE @ VCE = 10 V
– 1.0
0.4
– 1.5
0.2 VCE(sat) @ IC/IB = 10 – 2.0 qVB for VBE
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA

PNP Silicon
2N4403*
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 0.1 mAdc, IE = 0)
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current IBEV — 0.1 µAdc

Collector Cutoff Current ICEX — 0.1 µAdc

2N4402 2N4403
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4403 30 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4402 30 —

2N4403 60 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N4402 50 —

2N4403 100 —
(IC = 150 mAdc, VCE = 2.0 Vdc)(1) 2N4402 50 150

2N4403 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc)(1) Both 20 —

(IC = 150 mAdc, IB = 15 mAdc) — 0.4
(IC = 500 mAdc, IB = 50 mAdc) — 0.75
(IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95
(IC = 500 mAdc, IB = 50 mAdc) — 1.3

2N4403 200 —
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.5 pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 pF
Input Impedance hie ohms
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 750 7.5 k
2N4403 1.5 k 15 k
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10–4
2N4403 60 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 µmhos
Delay Time ( CC = 30 Vdc, VBE = + 2.0 Vdc,
(V td — 15 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr — 20 ns
(V ts — 225 ns
Fall Time IB1 = 15 mA, IB2 = 15 mA) tf — 30 ns
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V – 30 V
200 Ω 200 Ω
< 2 ns < 20 ns
+2 V +14 V
0 0
1.0 kΩ 1.0 kΩ CS* < 10 pF
CS* < 10 pF
– 16 V –16 V
10 to 100 µs, 1.0 to 100 µs,
DUTY CYCLE = 2% DUTY CYCLE = 2% + 4.0 V
Scope rise time < 4.0 ns

2N4402 2N4403
25°C 100°C
30 10
7.0
VCC = 30 V
20 5.0
Ceb IC/IB = 10
3.0
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
Ccb
5.0 0.5
QT
0.3
QA
0.2
2.0 0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500
100 100
70 IC/IB = 10 70 VCC = 30 V
50 IC/IB = 10
50
tr @ VCC = 30 V
30 tr @ VCC = 10 V 30
t, TIME (ns)
td @ VBE(off) = 2 V
20 td @ VBE(off) = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
Figure 5. Turn–On Time Figure 6. Rise Time
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts – 1/8 tf
30
20
10 20 30 50 70 100 200 300 500
Figure 7. Storage Time

2N4402 2N4403
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
f = 1 kHz
8 8

IC = 1.0 mA, RS = 430 Ω
6 6 IC = 50 µA
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ 100 µA
IC = 100 µA, RS = 1.6 kΩ 500 µA
4 4
1.0 mA
2 RS = OPTIMUM SOURCE RESISTANCE 2
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k

h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from both the 2N4402 and 2N4403 lines, and the
hfe and other “h” parameters for this series of transistors. To same units were used to develop the correspondingly–
obtain these curves, a high–gain and a low–gain unit were numbered curves on each graph.
1000 100 k
700 50 k 2N4403 UNIT 1
2N4403 UNIT 2
500 2N4402 UNIT 1

20 k
2N4402 UNIT 2
hfe , CURRENT GAIN
300 10 k
200 5k
2N4403 UNIT 1 2k
100 2N4403 UNIT 2
1k
2N4402 UNIT 1
70 2N4402 UNIT 2 500
50
200
30 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
20 500
10 2N4403 UNIT 1
2N4403 UNIT 2
5.0 100
2N4402 UNIT 1
2N4402 UNIT 2 50
2.0
20
1.0
10
0.5 2N4403 UNIT 1
5.0 2N4403 UNIT 2
2N4402 UNIT 1
0.2 2.0 2N4402 UNIT 2
0.1 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

2N4402 2N4403
3.0
VCE = 1.0 V
2.0 VCE = 10 V TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 0.5
TJ = 25°C
0
0.8 VBE(sat) @ IC/IB = 10 qVC for VCE(sat)
VOLTAGE (VOLTS)
0.5
0.6 VBE(sat) @ VCE = 10 V
1.0
0.4
1.5
0.2
2.0 qVS for VBE
VCE(sat) @ IC/IB = 10
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
NPN Silicon
2N4410
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage V(BR)CEX 120 — Vdc
(IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
(IC = 10 µAdc, IE = 0)

(IE = 10 µAdc, IC = 0)
Collector Cutoff Current ICBO µAdc
(VCB = 100 Vdc, IE = 0) — 0.01
(VCB = 100 Vdc, IE = 0, TA = 100°C) — 1.0
Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 4.0 Vdc, IC = 0)
REV 1

2N4410
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 60 400
Collector – Emitter Saturation Voltage VCE(sat) — 0.2 Vdc
(IC = 1.0 mAdc, IB = 0.1 mAdc)
Base – Emitter Saturation Voltage VBE(sat) — 0.8 Vdc
Base – Emitter On Voltage VBE(on) — 0.8 Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc)

Current – Gain — Bandwidth Product(2) fT 60 300 MHz
Collector–Base Capacitance Ccb — 12 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Emitter–Base Capacitance Ceb — 50 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
2. fT = |hfe| • ftest.
500
300 VCE = 1.0 V
TJ = 125°C
200 VCE = 5.0 V
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

2N4410
101
VCE = 30 V
100
IC, COLLECTOR CURRENT ( µA)

10–1 TJ = 125°C
IC = ICES
10–2 75°C
10–3 REVERSE FORWARD
25°C
10–4
10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
1.0 2.5
TJ = 25°C
θV, TEMPERATURE COEFFICIENT (mV/ °C)

2.0 TJ = – 55°C to +135°C
0.8 1.5
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10 1.0

0.6 0.5 qVC for VCE(sat)
0
0.4 – 0.5
– 1.0
qVB for VBE(sat)
0.2 – 1.5
VCE(sat) @ IC/IB = 10 – 2.0
0 – 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
50
30
VBB VCC
C, CAPACITANCE (pF)
10.2 V
– 8.8 V 30 V 20
Vin
100 3.0 k RC 10
0.25 µF Cibo
10 µs RB 7.0
INPUT PULSE Vout 5.0
5.1 k
3.0 Cobo
tr, tf ≤ 10 ns Vin 100 1N914
DUTY CYCLE = 1.0% 2.0
1.0
Values Shown are for IC @ 10 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit Figure 7. Capacitances

2N4410
1000 5000
IC/IB = 10 tf @ VCC = 120 V IC/IB = 10
3000
500 TJ = 25°C TJ = 25°C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
100 500
300 ts @ VCC = 120 V

50 td @ VEB(off) = 1.0 V
200
30 VCC = 120 V
20 100
10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
PNP Silicon
COLLECTOR
2N5087
3
Motorola Preferred Device
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 µAdc, IE = 0)
(VCB = 35 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)
(Replaces 2N5086/D)

2N5087
ON CHARACTERISTICS
(IC = 100 µAdc, VCE = 5.0 Vdc) 250 800
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 250 —
(IC = 10 mAdc, VCE = 5.0 Vdc)(1) 250 —

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 250 900
Noise Figure NF dB
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) — 2.0
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) — 2.0

2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 1. Noise Voltage Figure 2. Noise Current
NOISE FIGURE CONTOURS

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
500 k BANDWIDTH = 1.0 Hz 500 k BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA) IC, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ
Noise Figure is Defined as:
2 2 1ń2
50 k
20 k NF + 20 log10 en2 ) 4KTR S ) In RS
4KTRS
10 k 0.5 dB
5.0 k en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
2.0 k 1.0 dB K = Boltzman’s Constant (1.38 x 10–23 j/°K)
1.0 k T = Temperature of the Source Resistance (°K)
2.0 dB
500 RS = Source Resistance (Ohms)
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband

2N5087
400
TJ = 125°C
25°C
200
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
PULSE WIDTH = 300 µs
350 µA
0.8 IC, COLLECTOR CURRENT (mA) 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region Figure 8. Collector Characteristics
1.4 1.6
TJ = 25°C *APPLIES for IC/IB ≤ hFE/2

1.2
0.8
V, VOLTAGE (VOLTS)
1.0 *qVC for VCE(sat) 25°C to 125°C

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
VBE(on) @ VCE = 1.0 V
25°C to 125°C
0.4
1.6
0.2 qVB for VBE – 55°C to 25°C
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
C, CAPACITANCE (pF) 5.0
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance
20 200
VCE = –10 Vdc VCE = 10 Vdc
10 f = 1.0 kHz 100 f = 1.0 kHz

hie , INPUT IMPEDANCE (k Ω )
TA = 25°C TA = 25°C
7.0 70
5.0 50
3.0 30
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 15. Input Impedance Figure 16. Output Admittance

2N5087
1.0
0.7
r(t) TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.05 P(pk) D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1 READ TIME AT t1 (SEE AN–569)
0.01
0.02 SINGLE PULSE t2 ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
Figure 17. Thermal Response
400
1.0 ms 10 µs
The safe operating area curves indicate IC–VCE limits of the
200 transistor that must be observed for reliable operation. Collector load
100 µs
lines for specific circuits must fall below the limits indicated by the
100 TC = 25°C applicable curve.
1.0 s
dc The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
60 TA = 25°C variable depending upon conditions. Pulse curves are valid for duty
40 dc cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
20 TJ = 150°C limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
10 CURRENT LIMIT
THERMAL LIMIT
6.0
SECOND BREAKDOWN LIMIT
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 18. Active–Region Safe Operating Area
104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA

VCC = 30 V
A train of periodical power pulses can be represented by the model
103
IC, COLLECTOR CURRENT (nA)
as shown in Figure 19. Using the model and the device thermal
ICEO response the normalized effective transient thermal resistance of
102 Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
101 steady state value RθJA.
ICBO
AND Example:
ICEX @ VBE(off) = 3.0 V The 2N5087 is dissipating 2.0 watts peak under the following
100
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
10–1 Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10–2 The peak rise in junction temperature is therefore
– 40 – 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN–569.
Figure 19. Typical Collector Leakage Current

MOTOROLA
Amplifier Transistors
NPN Silicon 2N5088
2N5089
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range
Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 2N5088 30 —
2N5089 25 —
(IC = 100 mAdc, IE = 0) 2N5088 35 —
2N5089 30 —
Collector Cutoff Current ICBO nAdc
(VCB = 20 Vdc, IE = 0) 2N5088 — 50
(VCB = 15 Vdc, IE = 0) 2N5089 — 50
Emitter Cutoff Current IEBO nAdc
(VEB(off) = 3.0 Vdc, IC = 0) — 50
(VEB(off) = 4.5 Vdc, IC = 0) — 100
1. RθJA is measured with the device soldered into a typical printed circuit board.

2N5088 2N5089
ON CHARACTERISTICS
(IC = 100 µAdc, VCE = 5.0 Vdc) 2N5088 300 900
2N5089 400 1200
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088 350 —

2N5089 450 —
(IC = 10 mAdc, VCE = 5.0 Vdc)(2) 2N5088 300 —

2N5089 400 —
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5088 350 1400
2N5089 450 1800
Noise Figure NF dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, 2N5088 — 3.0
f = 1.0 kHz) 2N5089 — 2.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model

2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0
en , NOISE VOLTAGE (nV)

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency Figure 3. Effects of Collector Current
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16
3.0 BANDWIDTH = 10 Hz to 15.7 kHz

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current Figure 5. Wideband Noise Figure
100 Hz NOISE DATA

300 20
200 BANDWIDTH = 1.0 Hz IC = 10 mA
VT, TOTAL NOISE VOLTAGE (nV)
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage Figure 7. Noise Figure

2N5088 2N5089
4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4
TEMPERATURE COEFFICIENT (mV/ °C)

TJ = 25°C
0.8 – 0.8
RθVBE, BASE–EMITTER
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product

MOTOROLA
NPN Silicon 2N5209
2N5210
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 50 — Vdc
(IC = 1.0 mAdc, IB = 0)
(IC = 0.1 mAdc, IE = 0)
(VCB = 35 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)

2N5209 2N5210
ON CHARACTERISTICS
(IC = 100 µAdc, VCE = 5.0 Vdc) 2N5209 100 300
2N5210 200 600
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5209 150 —

2N5210 250 —
(IC = 10 mAdc, VCE = 5.0 Vdc)(1) 2N5209 150 —

2N5210 250 —
(IC = 1.0 mAdc, VCE = 5.0 mAdc)

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5209 150 600
2N5210 250 900
Noise Figure NF dB
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ, 2N5209 — 3.0
f = 1.0 kHz) 2N5210 — 2.0
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, 2N5209 — 4.0

f = 1.0 kHz) 2N5210 — 3.0
RS
in
en
IDEAL
TRANSISTOR

2N5209 2N5210
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
100 Hz NOISE DATA

300 20
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

2N5209 2N5210
4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4

TJ = 25°C
0.8 – 0.8
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA
Amplifier Transistors 2N5400

PNP Silicon
2N5401*
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Collector – Emitter Voltage VCEO 120 150 Vdc TO–92 (TO–226AA)

Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 2N5400 120 —
2N5401 150 —
(IC = 100 mAdc, IE = 0) 2N5400 130 —
2N5401 160 —
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 100 Vdc, IE = 0) 2N5400 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5401 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5400 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401 — 50
(VEB = 3.0 Vdc, IC = 0)

2N5400 2N5401
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5400 30 —
2N5401 50 —
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400 40 180

2N5401 60 240
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400 40 —

2N5401 50 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.5
(IC = 10 mAdc, IB = 1.0 mAdc) — 1.0
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.0

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N5400 100 400
2N5401 100 300
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2N5401 40 200
Noise Figure NF — 8.0 dB
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

2N5400 2N5401
200
150
TJ = 125°C
h FE, CURRENT GAIN
100
25°C
70
50
– 55°C
30 VCE = – 1.0 V
VCE = – 5.0 V
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
103
VCE = 30 V
102
IC = ICES
101
TJ = 125°C
100
75°C
10–1
REVERSE FORWARD
10–2 25°C
10–3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

2N5400 2N5401
1.0 2.5
TJ = 25°C TJ = – 55°C to 135°C

0.9 2.0
0.8 1.5
V, VOLTAGE (VOLTS)
0.7 1.0
0.6 0.5
θVC for VCE(sat)
0.5 0
0.4 –0.5
0.3 –1.0
0.2 VCE(sat) @ IC/IB = 10 –1.5
θVB for VBE(sat)
0.1 –2.0
0 –2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
VBB VCC 50
+ 8.8 V –30 V
30
C, CAPACITANCE (pF)
10.2 V
20 Cibo
100 3.0 k RC
Vin
Vout 10
10 µs 0.25 µF RB 7.0
INPUT PULSE 5.0 Cobo
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914 3.0
1.0
1000 2000
700 IC/IB = 10
TJ = 25°C tr @ VCC = 120 V 1000
500 IC/IB = 10 tf @ VCC = 120 V
700 TJ = 25°C
300
tr @ VCC = 30 V 500
200
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
300
100 200
70 ts @ VCC = 120 V
50 100
70
30
50
20 td @ VBE(off) = 1.0 V
VCC = 120 V 30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
Amplifier Transistors 2N5550

NPN Silicon
2N5551*
COLLECTOR *Motorola Preferred Device
3
2
BASE
1
EMITTER
MAXIMUM RATINGS 1
2
Rating Symbol 2N5550 2N5551 Unit 3

Collector – Base Voltage VCBO 160 180 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 2N5550 140 —
2N5551 160 —
(IC = 100 µAdc, IE = 0 ) 2N5550 160 —
2N5551 180 —
(IE = 10 µAdc, IC = 0)
(VCB = 100 Vdc, IE = 0) 2N5550 — 100 nAdc
(VCB = 120 Vdc, IE = 0) 2N5551 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551 — 50
(VEB = 4.0 Vdc, IC = 0)

2N5550 2N5551
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550 60 —
2N5551 80 —
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550 60 250

2N5551 80 250
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550 20 —

2N5551 30 —
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types — 0.15
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 0.25

2N5551 — 0.20
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550 — 1.2

2N5551 — 1.0

Current – Gain — Bandwidth Product fT 100 300 MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550 — 30
2N5551 — 20
Small–Signal Current Gain hfe 50 200 —
Noise Figure NF dB
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, 2N5550 — 10
f = 1.0 kHz) 2N5551 — 8.0

2N5550 2N5551
500
300 VCE = 1.0 V
TJ = 125°C
200 VCE = 5.0 V
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

2N5550 2N5551
101
VCE = 30 V
100

10–1 TJ = 125°C
IC = ICES
10–2 75°C
25°C
10–4
10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
1.0 2.5
TJ = 25°C

2.0 TJ = – 55°C to +135°C
0.8 1.5
V, VOLTAGE (VOLTS)

0
0.4 – 0.5
– 1.0
qVB for VBE(sat)
0.2 – 1.5
VCE(sat) @ IC/IB = 10 – 2.0
0 – 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
50
30
VBB VCC
C, CAPACITANCE (pF)
10.2 V
– 8.8 V 30 V 20
Vin
100 3.0 k RC 10
0.25 µF Cibo
10 µs RB 7.0
5.1 k
3.0 Cobo
tr, tf ≤ 10 ns Vin 100 1N914
1.0

2N5550 2N5551
1000 5000
IC/IB = 10 tf @ VCC = 120 V IC/IB = 10
3000
500 TJ = 25°C TJ = 25°C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
100 500
300 ts @ VCC = 120 V

50 td @ VEB(off) = 1.0 V
200
30 VCC = 120 V
20 100
10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
Darlington Transistors 2N6426*

NPN Silicon
2N6427
COLLECTOR 3
BASE
2
EMITTER 1
1
2
MAXIMUM RATINGS 3

Collector – Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA)
Emitter – Base Voltage VEBO 12 Vdc
Temperature Range

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) V(BR)CEO 40 — — Vdc
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage V(BR)CBO 40 — — Vdc
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 12 — — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICES — — 1.0 mAdc
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current ICBO — — 50 nAdc
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current IEBO — — 50 nAdc
(VEB= 10 Vdc, IC = 0)


2N6426 2N6427
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N6426 20,000 — 200,000
2N6427 10,000 — 100,000
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426 30,000 — 300,000

2N6427 20,000 — 200,000
(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426 20,000 — 200,000

2N6427 14,000 — 140,000
(IC = 50 mAdc, IB = 0.5 mAdc) — 0.71 1.2
(IC = 500 mAdc, IB = 0.5 mAdc — 0.9 1.5
Base – Emitter Saturation Voltage VBE(sat) — 1.52 2.0 Vdc
Base – Emitter On Voltage VBE(on) — 1.24 1.75 Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc)

Output Capacitance Cobo — 5.4 7.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 15 pF
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426 100 — 2000
2N6427 50 — 1000
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426 20,000 — —
2N6427 10,000 — —
Current – Gain — High Frequency |hfe| —
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426 1.5 2.4 —
2N6427 1.3 2.4 —
Output Admittance hoe — — 1000 mmhos
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure NF — 3.0 10 dB
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)
RS
in
en
IDEAL
TRANSISTOR

2N6426 2N6427
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7
i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
BANDWIDTH = 10 Hz TO 15.7 kHz

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100
RS, SOURCE RESISTANCE (kΩ) 0 RS, SOURCE RESISTANCE (kΩ) 0
Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

2N6426 2N6427
SMALL–SIGNALCHARACTERISTICS
20 4.0
VCE = 5.0 V
|h fe |, SMALL–SIGNAL CURRENT GAIN

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
Figure 6. Capacitance Figure 7. High Frequency Current Gain

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.6 – 1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C

TJ = 25°C
1.4 – 2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

2N6426 2N6427
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
r(t), TRANSIENT THERMAL
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
0.02 ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

MOTOROLA
High Voltage Transistors NPN

COLLECTOR COLLECTOR
2N6515
2N6517
3 3
2
BASE
2
BASE PNP
NPN PNP
2N6519
1
EMITTER
1
EMITTER 2N6520
MAXIMUM RATINGS
2N6517 Voltage and current are negative
Rating Symbol 2N6515 2N6519 2N6520 Unit for PNP transistors
Collector – Emitter Voltage VCEO 250 300 350 Vdc

Collector – Base Voltage VCBO 250 300 350 Vdc
Emitter – Base Voltage VEBO Vdc
2N6515, 2N6516, 2N6517 6.0
2N6519, 2N6520 5.0
Base Current IB 250 mAdc
Total Device Dissipation PD 625 mW 1
2
@ TA = 25°C 5.0 mW/°C 3
Derate above 25°C
Total Device Dissipation PD 1.5 Watts
TO–92 (TO–226AA)
@ TC = 25°C 12 mW/°C
Derate above 25°C
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 2N6515 250 —
2N6519 300 —
2N6517, 2N6520 350 —
(IC = 100 µAdc, IE = 0 ) 2N6515 250 —
2N6519 300 —
2N6517, 2N6520 350 —
(IE = 10 µAdc, IC = 0) 2N6515, 2N6517 6.0 —
2N6519, 2N6520 5.0 —
REV 1

NPN 2N6515 2N6517 PNP 2N6519 2N6520
OFF CHARACTERISTICS (Continued)
(VCB = 150 Vdc, IE = 0) 2N6515 — 50
(VCB = 200 Vdc, IE = 0) 2N6519 — 50
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520 — 50
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517 — 50
(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520 — 50
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515 35 —
2N6519 30 —
2N6517, 2N6520 20 —
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515 50 —

2N6519 45 —
2N6517, 2N6520 30 —
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515 50 300

2N6519 45 270
2N6517, 2N6520 30 200
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515 45 220

2N6519 40 200
2N6517, 2N6520 20 200
(IC = 100 mAdc, VCE = 10 Vdc) 2N6515 25 —

2N6519 20 —
2N6517, 2N6520 15 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.30
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.35
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.50
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.0
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.75
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.85
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.90
Base–Emitter On Voltage VBE(on) — 2.0 Vdc
(IC = 100 mAdc, VCE = 10 Vdc)

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Ceb pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 — 80
2N6519, 2N6520 — 100
Turn–On Time ton — 200 µs
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn–Off Time toff — 3.5 µs
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN PNP
2N6515 2N6519
200 200
VCE = 10 V TJ = 125°C VCE = –10 V TJ = 125°C

25°C
100 25°C 100
70 70 – 55°C
– 55°C
50 50
30 30
20 20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
2N6517 2N6520
200 200
VCE = 10 V TJ = 125°C VCE = –10 V
TJ = 125°C
100 100
hFE , DC CURRENT GAIN

25°C 25°C
70 70
– 55°C
50 50
– 55°C
30 30
20 20
10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
2N6515, 2N6517 2N6519, 2N6520

100 100
70 70
50 50
TJ = 25°C TJ = 25°C
30 VCE = 20 V 30 VCE = – 20 V
f = 20 MHz f = 20 MHz
20 20
10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
Figure 3. Current–Gain — Bandwidth Product

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN PNP
2N6515, 2N6517 2N6519, 2N6520

1.4 –1.4
TJ = 25°C
1.2 –1.2 TJ = 25°C
1.0 –1.0
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.8 VBE(sat) @ IC/IB = 10 –0.8 VBE(sat) @ IC/IB = 10
0.6 –0.6 VBE(on) @ VCE = –10 V

VBE(on) @ VCE = 10 V
0.4 –0.4
0.2 VCE(sat) @ IC/IB = 10 –0.2 VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0 VCE(sat) @ IC/IB = 5.0
0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
Figure 4. “On” Voltages
2N6515, 2N6517 2N6519, 2N6520

2.5 RθV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5
2.0
IC
IB
+ 10 2.0
IC
IB
+ 10
1.5 1.5
1.0 25°C to 125°C 1.0 25°C to 125°C
0.5 0.5 RθVB for VBE
RθVC for VCE(sat)
0 0 – 55°C to 25°C
– 55°C to 25°C
– 0.5 – 0.5
– 1.0 – 1.0
– 55°C to 125°C
– 1.5 – 1.5 RθVC for VCE(sat)
RθVB for VBE – 55°C to 125°C
– 2.0 – 2.0
– 2.5 – 2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
Figure 5. Temperature Coefficients
2N6515, 2N6517 2N6519, 2N6520

100 100
70 TJ = 25°C 70 Ceb TJ = 25°C
50 50
Ceb
30 30
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
20 20
10 10
7.0 7.0 Ccb
5.0 Ccb 5.0
3.0 3.0
2.0 2.0
1.0 1.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 – 0.2 – 0.5 – 1.0 – 2.0 – 5.0 – 10 – 20 – 50 – 100 – 200
Figure 6. Capacitance

NPN 2N6515 2N6517 PNP 2N6519 2N6520
NPN PNP
2N6515, 2N6517 2N6519, 2N6520

1.0 k 1.0 k
700 700
VCE(off) = 100 V td @ VBE(off) = 2.0 V VCE(off) = –100 V
500 IC/IB = 5.0 500 IC/IB = 5.0
td @ VBE(off) = 2.0 V
300 TJ = 25°C 300 TJ = 25°C
200 200 tr
t, TIME (ns)
t, TIME (ns)
tr
100 100
70 70
50 50
30 30
20 20
10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
Figure 7. Turn–On Time
2N6515, 2N6517 2N6519, 2N6520

10 k 2.0 k
7.0 k ts
5.0 k ts 1.0 k
700
3.0 k
500 tf
2.0 k VCE(off) = –100 V
t, TIME (ns)
VCE(off) = 100 V 300

IC/IB = 5.0
1.0 k tf IC/IB = 5.0 200 IB1 = IB2
700 IB1 = IB2 TJ = 25°C
500 TJ = 25°C 100
300 70
50
200
30
100 20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
Figure 8. Turn–Off Time

NPN 2N6515 2N6517 PNP 2N6519 2N6520
+VCC
VCC ADJUSTED 2.2 k

FOR VCE(off) = 100 V 20 k
+10.8 V 50 Ω SAMPLING SCOPE
1.0 k
50
–9.2 V 1/2MSD7000
PULSE WIDTH ≈ 100 µs

tr, tf ≤ 5.0 ns APPROXIMATELY
DUTY CYCLE ≤ 1.0% –1.35 V (ADJUST FOR V(BE)off = 2.0 V)
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
Figure 9. Switching Time Test Circuit
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
0.03
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.02
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
500 FIGURE A
100 µs 10 µs
TA = 25°C
200 tP
100 TC = 25°C 1.0 ms
PP PP
50 100 ms
20
CURRENT LIMIT
10
THERMAL LIMIT
5.0 (PULSE CURVES @ TC = 25°C) t1
2.0
CURVES APPLY 2N6515 1/f
1.0 2N6519
0.5
BELOW RATED VCEO 2N6517, 2N6520 DUTY CYCLE + t1 f + ttP1
0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
PNP Silicon General Purpose 2SA1774

This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT–416/SC–90 package which is designed for low power
surface mount applications, where board space is at a premium. PNP GENERAL
• Reduces Board Space PURPOSE AMPLIFIER
TRANSISTORS
• High hFE, 210 – 460 (typical) SURFACE MOUNT
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (TA = 25°C) 2

1
Collector–Base Voltage V(BR)CBO –60 Vdc
Collector–Emitter Voltage V(BR)CEO –50 Vdc SOT–416/SC–90
Emitter–Base Voltage V(BR)EBO –6.0 Vdc
Collector Current — Continuous IC –100 mAdc
COLLECTOR
DEVICE MARKING 3
2SA1774 = F9
Rating Symbol Max Unit
Power Dissipation(1) PD 150 mW
Junction Temperature TJ 150 °C 1 2
Storage Temperature Range Tstg – 55 ~ + 150 °C BASE EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C)

Collector–Base Breakdown Voltage (IC = –50 µAdc, IE = 0) V(BR)CBO –60 — — Vdc
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –50 — — Vdc
Emitter–Base Breakdown Voltage (IE = –50 µAdc, IE = 0) V(BR)EBO –6.0 — — Vdc
Collector–Base Cutoff Current (VCB = –30 Vdc, IE = 0) ICBO — — –0.5 nA
Emitter–Base Cutoff Current (VEB = –5.0 Vdc, IB = 0) IEBO — — –0.5 µA
Collector–Emitter Saturation Voltage(2) VCE(sat) Vdc
(IC = –50 mAdc, IB = –5.0 mAdc) — — –0.5
(VCE = –6.0 Vdc, IC = –1.0 mAdc) 120 — 560
Transition Frequency fT MHz
(VCE = –12 Vdc, IC = –2.0 mAdc, f = 30 MHz) — 140 —
Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1 MHz) COB — 3.5 — pF
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
REV 1

2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000
TA = 25°C VCE = 10 V
120 TA = 25°C
TA = 75°C
DC CURRENT GAIN
90
300 µA TA = – 25°C
250 100
60 200
150
100
30
IB = 50 µA
0 10
0 3 6 9 12 15 0.1 1 10 100
VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. IC – VCE Figure 2. DC Current Gain
2 900
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C 800
COLLECTOR VOLTAGE (mV)

700
1.5
600
500
1
400
300
0.5 TA = 25°C
200
VCE = 5 V
100
0 0
0.01 0.1 1 10 100 0.2 0.5 1 5 10 20 40 60 80 100 150 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. On Voltage
13 14
12 12
Cib, INPUT CAPACITANCE (pF)
Cob, CAPACITANCE (pF)
11 10
10 8
9 6
8 4
7 2
6 0
0 1 2 3 4 0 10 20 30 40
VEB (V) VCB (V)
Figure 5. Capacitance Figure 6. Capacitance

MOTOROLA
Preliminary Information 2SC4617

NPN Silicon General Purpose
This NPN transistor is designed for general purpose amplifier applications. NPN GENERAL
This device is housed in the SOT-416/SC–90 package which is designed for PURPOSE AMPLIFIER
low power surface mount applications, where board space is at a premium. TRANSISTORS
SURFACE MOUNT
• Reduces Board Space
• High hFE, 210 – 460 (typical)
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel 3
2
Collector-Base Voltage V(BR)CBO 50 Vdc
SOT–416/SC–90
Collector-Emitter Voltage V(BR)CEO 50 Vdc
Emitter-Base Voltage V(BR)EBO 5.0 Vdc
Collector Current — Continuous IC 100 mAdc COLLECTOR
3
DEVICE MARKING
2SC4617 = B9
1 2
Junction Temperature TJ 150 °C
BASE EMITTER
Storage Temperature Range Tstg – 55 ~ + 150 °C

Collector-Base Breakdown Voltage (IC = 50 µAdc, IE = 0) V(BR)CBO 50 — — Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — — Vdc
Emitter-Base Breakdown Voltage (IE = 50 µAdc, IE = 0) V(BR)EBO 5.0 — — Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — — 0.5 µA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO — — 0.5 µA
Collector-Emitter Saturation Voltage(2) VCE(sat) Vdc
(IC = 60 mAdc, IB = 5.0 mAdc) — — 0.4
(VCE = 6.0 Vdc, IC = 1.0 mAdc) 120 — 560
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) fT — 180 — MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) COB — 2.0 — pF
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

2SC4617
60 1000
TA = 25°C 160 µA VCE = 10 V
TA = 25°C
50
140 µA TA = 75°C
120 µA
DC CURRENT GAIN
40
TA = – 25°C
100 µA
30 100
80 µA
20 60 µA
40 µA
10 IB = 20 µA
0 10
0 2 4 6 8 0.1 1 10 100
VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. IC – VCE Figure 2. DC Current Gain
2 900
TA = 25°C 800
1.5 COLLECTOR VOLTAGE (mV) 700

600
1 500
400
TA = 25°C
300
VCE = 5 V
0.5
200
100
0 0
0.01 0.1 1 10 100 0.2 0.5 1 5 10 20 40 60 80 100 150 200
Figure 4. On Voltage
20 7
6
18
5
16
4
14
3
12
2
10 1
0 1 2 3 4 0 10 20 30 40
VEB (V) VCB (V)

MOTOROLA
BC182,A,B
NPN Silicon
BC183
BC184
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol BC182 BC183 BC184 Unit
Collector – Emitter Voltage VCEO 50 30 30 Vdc CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO V
(IC = 2.0 mA, IB = 0) BC182 50 — —
BC183 30 — —
BC184 30 — —
Collector – Base Breakdown Voltage V(BR)CBO V
(IC = 10 mA, IE = 0) BC182 60 — —
BC183 45 — —
BC184 45 — —
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — — V
(IE = 100 mA, IC = 0)
Collector Cutoff Current ICBO nA
(VCB = 50 V, VBE = 0) BC182 — 0.2 15
(VCB = 30 V, VBE = 0) BC183 — 0.2 15
BC184 — 0.2 15
Emitter–Base Leakage Current IEBO — — 15 nA
(VEB = 4.0 V, IC = 0)

BC182,A,B BC183 BC184

ON CHARACTERISTICS
(IC = 10 µA, VCE = 5.0 V) BC182 40 — —
BC183 40 — —
BC184 100 — —
(IC = 2.0 mA, VCE = 5.0 V) BC182 120 — 500

BC183 120 — 800
BC184 250 — 800
(IC = 100 mA, VCE = 5.0 V) BC182 80 — —

BC183 80 — —
BC184 130 — —
Collector – Emitter On Voltage VCE(sat) V
(IC = 10 mA, IB = 0.5 mA) — 0.07 0.25
(IC = 100 mA, IB = 5.0 mA)(1) — 0.2 0.6
Base – Emitter Saturation Voltage VBE(sat) — — 1.2 V
(IC = 100 mA, IB = 5.0 mA)(1)
Base–Emitter On Voltage VBE(on) V
(IC = 100 µA, VCE = 5.0 V) — 0.5 —
(IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7
(IC = 100 mA, VCE = 5.0 V)(1) — 0.83 —
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) BC182 — 100 —
BC183 — 120 —
BC184 — 140 —
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC182 150 200 —

BC183 150 240 —
BC184 150 280 —
Common Base Output Capacitance Cob — — 5.0 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Common Base Input Capacitance Cib — 8.0 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182 125 — 500
BC183 125 — 900
BC184 240 — 900
BC182A 125 — 260
BC182B 240 — 500
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, BC184 — 2.0 4.0
f = 1.0 kHz, f = 200 Hz) BC182 — 2.0 10
BC183 — 2.0 10
BC184 — 2.0 4.0
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

BC182,A,B BC183 BC184
2.0 1.0
VCE = 10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN
1.5 0.9
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

400 10
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF)
5.0 Cib
100 VCE = 10 V
80 TA = 25°C 3.0
Cob
60
2.0
40
30
20 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances
170
r b, BASE SPREADING RESISTANCE (OHMS)
160
150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C
130
120
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance

MOTOROLA
BC212,B
PNP Silicon
BC213
COLLECTOR BC214
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
Collector – Emitter Voltage VCEO –50 –30 –30 Vdc CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector – Base Voltage VCBO –60 –45 –45 Vdc
Emitter – Base Voltage VEBO –5.0 Vdc
Temperature Range

Collector – Emitter Breakdown Voltage BC212 V(BR)CEO –50 — — Vdc
(IC = –2.0 mAdc, IB = 0) BC213 –30 — —
BC214 –30 — —
Collector – Base Breakdown Voltage BC212 V(BR)CBO –60 — — Vdc
(IC = –10 mA, IE = 0) BC213 –45 — —
BC214 –45 — —
Emitter – Base Breakdown Voltage BC212 V(BR)EBO –5 — — Vdc
(IE = –10 mAdc, IC = 0) BC213 –5 — —
BC214 –5 — —
Collector–Emitter Leakage Current BC212 ICBO — — –15 nAdc
(VCB = –30 V) BC213 — — –15
BC214 — — –15
Emitter–Base Leakage Current BC212 IEBO — — –15 nAdc
(VEB = –4.0 V, IC = 0) BC213 — — –15
BC214 — — –15

BC212,B BC213 BC214

ON CHARACTERISTICS
(IC = –10 µAdc, VCE = –5.0 Vdc) BC212 40 — —
BC213 40 — —
BC214 100 — —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC212 60 — —

BC213 80 — —
BC214 140 — 600
(IC = –100 mAdc, VCE = –5.0 Vdc)(1) BC212, BC214 — 120 —

BC213 — 140 —
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.10 —
(IC = –100 mAdc, IB = –5.0 mAdc)(1) — –0.25 –0.6
Base – Emitter Saturation Voltage VBE(sat) — –1.0 –1.4 Vdc
(IC = –100 mAdc, IB = –5.0 mAdc)
Base–Emitter On Voltage VBE(on) –0.6 –0.62 –0.72 Vdc
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) BC212 — 280 —
BC214 — 320 —
BC213 — 360 —
Common–Base Output Capacitance Cob — — 6.0 pF
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ , f = 1.0 kHz) BC214 — — 2
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) BC212, BC213 — — 10
(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz) BC212 60 — —
BC213 80 — —
BC214 140 — —
BC212B 200 — 400
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

BC212,B BC213 BC214
2.0 –1.0
VCE = –10 V TA = 25°C
1.5 –0.9
TA = 25°C VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
1.0 –0.7 VBE(on) @ VCE = –10 V
–0.6
0.7
–0.5
0.5 –0.4
–0.3
0.3 –0.2
–0.1
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

400 10
300 Cib
7.0
200
C, CAPACITANCE (pF)
150 VCE = –10 V 5.0 TA = 25°C
TA = 25°C
100
80 3.0
60 Cob
2.0
40
30
20 1.0
–0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
1.0 150
r b′, BASE SPREADING RESISTANCE (OHMS)
hob, OUTPUT ADMITTANCE (OHMS)
0.5 VCE = –10 V

f = 1.0 kHz 140
0.3 VCE = –10 V
TA = 25°C f = 1.0 kHz
130 TA = 25°C
0.1
120
0.05
0.03
110
0.01 100
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
Figure 5. Output Admittance Figure 6. Base Spreading Resistance

MOTOROLA
BC237,A,B,C
NPN Silicon
BC238B,C
BC239,C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Collector – Emitter Voltage VCES 50 30 30 Vdc
Emitter – Base Voltage VEBO 6.0 5.0 5.0 Vdc
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC237 V(BR)CEO 45 — — V
(IC = 2.0 mA, IB = 0) BC238 25 — —
BC239 25 — —
Emitter – Base Breakdown Voltage BC237 V(BR)EBO 6.0 — — V
(IE = 100 mA, IC = 0) BC238 5.0 — —
BC239 5.0 — —
Collector Cutoff Current ICES
(VCE = 30 V, VBE = 0) BC238 — 0.2 15 nA
BC239 — 0.2 15
(VCE = 50 V, VBE = 0) BC237 — 0.2 15
(VCE = 30 V, VBE = 0) TA = 125°C BC238 — 0.2 4.0 µA

BC239 — 0.2 4.0
(VCE = 50 V, VBE = 0) TA = 125°C BC237 — 0.2 4.0
REV 1

BC237,A,B,C BC238B,C BC239,C

ON CHARACTERISTICS
(IC = 10 µA, VCE = 5.0 V) BC237A — 90 —
BC237B/238B — 150 —
BC237C/238C/239C — 270 —
(IC = 2.0 mA, VCE = 5.0 V) BC237 120 — 800

BC239 120 — 800
BC237A 120 170 220
BC237B/238B 200 290 460
BC237C/238C/239C 380 500 800
(IC = 100 mA, VCE = 5.0 V) BC237A — 120 —

BC237B/238B — 180 —
BC237C/238C/239C — 300 —
Collector – Emitter On Voltage VCE(sat) V
(IC = 10 mA, IB = 0.5 mA) BC237/BC238/BC239 — 0.07 0.2
(IC = 100 mA, IB = 5.0 mA) BC237/BC239 — 0.2 0.6
BC238 0.8
Base – Emitter Saturation Voltage VBE(sat) V
(IC = 10 mA, IB = 0.5 mA) — 0.6 0.83
(IC = 100 mA, IB = 5.0 mA) — — 1.05
(IC = 100 µA, VCE = 5.0 V) — 0.5 —
(IC = 2.0 mA, VCE = 5.0 V) 0.55 0.62 0.7
(IC = 100 mA, VCE = 5.0 V) — 0.83 —
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) BC237 — 100 —
BC238 — 120 —
BC239 — 140 —
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC237 150 200 —

BC238 150 240 —
BC239 150 280 —
Collector–Base Capacitance Cobo — — 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Emitter–Base Capacitance Cibo — 8.0 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz) BC239
— 2.0 4.0
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz, ∆f = 200 Hz) BC237 — 2.0 10
BC238 — 2.0 10
BC239 — 2.0 4.0

BC237,A,B,C BC238B,C BC239,C
2.0 1.0
VCE = 10 V TA = 25°C
1.5 0.9
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

400 10
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF)
5.0 Cib
100 VCE = 10 V
80 TA = 25°C 3.0
Cob
60
2.0
40
30
20 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
170
160
150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C
130
120
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

MOTOROLA
Amplifier Transistors BC307

PNP Silicon BC307B
BC307C
BC308C
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating Symbol BC307, B, C BC308C Unit
Collector – Emitter Voltage VCEO –45 –25 Vdc
Collector – Base Voltage VCBO –50 –30 Vdc
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC307,B,C V(BR)CEO –45 — — Vdc
(IC = –2.0 mAdc, IB = 0) BC308C –25 — —
Emitter – Base Breakdown Voltage BC307,B,C V(BR)EBO –5.0 — — Vdc
(IE = –100 mAdc, IC = 0) BC308C –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –50 V, VBE = 0) BC307,B,C — –0.2 –15 nAdc
(VCES = –30 V, VBE = 0) BC308C — –0.2 –15
(VCES = –50 V, VBE = 0) TA = 125°C BC307,B,C — –0.2 –4.0 µA
(VCES = –30 V, VBE = 0) TA = 125°C BC308C — –0.2 –4.0
REV 1

BC307 BC307B BC307C BC308C
ON CHARACTERISTICS
(IC = –10 µAdc, VCE = –5.0 Vdc) BC307B — 150 —
BC307C/308C — 270 —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307 120 — 800

BC307B/308B 200 290 460
BC307C/308C 420 500 800
(IC = –100 mAdc, VCE = –5.0 Vdc) BC307B — 180 —

BC307C/308C — 300 —
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.10 –0.3
(IC = –10 mAdc, IB = see Note 1) — –0.30 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc) — –0.25 —
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.7 —
(IC = –100 mAdc, IB = –5.0 mAdc) — –1.0 —
Base–Emitter On Voltage VBE(on) –0.55 –0.62 –0.7 Vdc
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) BC307,B,C — 280 —
BC308C — 320 —
Common Base Capacitance Ccbo — — 6.0 pF
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz) BC307,B,C — 2.0 10
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz, f = 200 Hz) BC308C — 2.0 10
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.

BC307 BC307B BC307C BC308C
TYPICAL CHARACTERISTICS
2.0 –1.0
VCE = –10 V TA = 25°C
1.5 –0.9
TA = 25°C VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
1.0 –0.7 VBE(on) @ VCE = –10 V
–0.6
0.7
–0.5
0.5 –0.4
–0.3
0.3 –0.2
–0.1
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

400 10
300 Cib
7.0
200 C, CAPACITANCE (pF)
150 VCE = –10 V 5.0 TA = 25°C
TA = 25°C
100
80 3.0
60 Cob
2.0
40
30
20 1.0
–0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
1.0 150
r b′, BASE SPREADING RESISTANCE (OHMS)
hob, OUTPUT ADMITTANCE (OHMS)
0.5 VCE = –10 V

f = 1.0 kHz 140
0.3 VCE = –10 V
TA = 25°C f = 1.0 kHz
130 TA = 25°C
0.1
120
0.05
0.03
110
0.01 100
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
Figure 5. Output Admittance Figure 6. Base Spreading Resistance

MOTOROLA
PNP Silicon BC327,-16,-25
BC328,-16,-25
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol BC327 BC328 Unit
Collector – Emitter Voltage VCEO –45 –25 Vdc CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mA, IB = 0) BC327 –45 — —
BC328 –25 — —
Collector – Emitter Breakdown Voltage V(BR)CES Vdc
(IC = –100 µA, IE = 0) BC327 –50 — —
BC328 –30 — —
Emitter – Base Breakdown Voltage V(BR)EBO –5.0 — — Vdc
(IE = –10 mA, IC = 0)
(VCB = –30 V, IE = 0) BC327 — — –100
(VCB = –20 V, IE = 0) BC328 — — –100
Collector Cutoff Current ICES nAdc
(VCE = –45 V, VBE = 0) BC327 — — –100
(VCE = –25 V, VBE = 0) BC328 — — –100
Emitter Cutoff Current IEBO — — –100 nAdc
(VEB = –4.0 V, IC = 0)

BC327,-16,-25 BC328,-16,-25

ON CHARACTERISTICS
(IC = –100 mA, VCE = –1.0 V) BC327/BC328 100 — 630
BC327–16/BC328–16 100 — 250
BC327–25/BC328–25 160 — 400
(IC = –300 mA, VCE = –1.0 V) 40 — —
Base–Emitter On Voltage VBE(on) — — –1.2 Vdc
(IC = –300 mA, VCE = –1.0 V)
Collector – Emitter Saturation Voltage VCE(sat) — — –0.7 Vdc
(IC = –500 mA, IB = –50 mA)
Output Capacitance Cob — 11 — pF
(VCB = –10 V, IE = 0, f = 1.0 MHz)
Current – Gain — Bandwidth Product fT — 260 — MHz
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.7 D = 0.5
0.5
0.3
THERMAL RESISTANCE
0.2
0.2 0.1
θJC(t) = (t) θJC
0.1 0.05 θJC = 100°C/W MAX
P(pk)
0.07 0.02 θJA(t) = r(t) θJA
SINGLE PULSE
0.05 t1 θJA = 375°C/W MAX
0.01 D CURVES APPLY FOR POWER
0.03 SINGLE PULSE t2 PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)
–1000 1000
1.0 s 1.0 ms TJ = 135°C VCE = –1.0 V
TA = 25°C
100 µs
dc
TC = 25°C
dc
–100 TA = 25°C 100
CURRENT LIMIT
THERMAL LIMIT
(APPLIES BELOW RATED VCEO)
–10 10
–1.0 –3.0 –10 –30 –100 –0.1 –1.0 –10 –100 –1000
VCE, COLLECTOR–EMITTER VOLTAGE IC, COLLECTOR CURRENT (mA)
Figure 2. Active Region — Safe Operating Area Figure 3. DC Current Gain

BC327,-16,-25 BC328,-16,-25

–1.0 –1.0
TJ = 25°C TA = 25°C
–0.8 VBE(sat) @ IC/IB = 10
–0.8
VBE(on) @ VCE = –1.0 V
V, VOLTAGE (VOLTS)
–0.6 IC = –0.6
–500 mA
–0.4 –0.4
IC = –300 mA
–0.2 IC = –100 mA –0.2
IC = –10 mA
0 0
–0.01 –0.1 –1.0 –10 –100 –1.0 –10 –100 –1000
Figure 4. Saturation Region Figure 5. “On” Voltages
100
+1.0
θVC for VCE(sat)
C, CAPACITANCE (pF)
0
Cib
10
–1.0
Cob
θVB for VBE
–2.0
1.0
–1.0 –10 –100 –1000 –0.1 –1.0 –10 –100
IC, COLLECTOR CURRENT VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients Figure 7. Capacitances

MOTOROLA
NPN Silicon BC337,-16,-25,-40
BC338,-16,-25,-40
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
Collector – Emitter Voltage VCEO 45 25 Vdc CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mA, IB = 0) BC337 45 — —
BC338 25 — —
(IC = 100 µA, IE = 0) BC337 50 — —
BC338 30 — —
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10 mA, IC = 0)
(VCB = 30 V, IE = 0) BC337 — — 100
(VCB = 20 V, IE = 0) BC338 — — 100
(VCE = 45 V, VBE = 0) BC337 — — 100
(VCE = 25 V, VBE = 0) BC338 — — 100
(VEB = 4.0 V, IC = 0)

BC337,-16,-25,-40 BC338,-16,-25,-40

ON CHARACTERISTICS
(IC = 100 mA, VCE = 1.0 V) BC337/BC338 100 — 630
BC337–16/BC338–16 100 — 250
BC337–25/BC338–25 160 — 400
BC337–40/BC338–40 250 — 630
(IC = 300 mA, VCE = 1.0 V) 60 — —
Base–Emitter On Voltage VBE(on) — — 1.2 Vdc
(IC = 300 mA, VCE = 1.0 V)
Collector – Emitter Saturation Voltage VCE(sat) — — 0.7 Vdc
(IC = 500 mA, IB = 50 mA)
(VCB = 10 V, IE = 0, f = 1.0 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7 D = 0.5
0.5
0.3
THERMAL RESISTANCE
0.2
0.2 0.1
θJC(t) = (t) θJC
0.1 0.05 θJC = 100°C/W MAX
P(pk)
0.07 0.02 θJA(t) = r(t) θJA
SINGLE PULSE
0.05 t1 θJA = 375°C/W MAX
0.01 D CURVES APPLY FOR POWER
0.03 SINGLE PULSE t2 PULSE TRAIN SHOWN
TJ(pk) – TC = P(pk) θJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)
1000 1000
1.0 s 1.0 ms TJ = 135°C
VCE = 1 V
100 µs TJ = 25°C
dc
TC = 25°C
dc
100 TA = 25°C 100
CURRENT LIMIT
THERMAL LIMIT
(APPLIES BELOW RATED VCEO)
10 10
1.0 3.0 10 30 100 0.1 1.0 10 100 1000
VCE, COLLECTOR–EMITTER VOLTAGE IC, COLLECTOR CURRENT (AMP)
Figure 2. Active Region — Safe Operating Area Figure 3. DC Current Gain

BC337,-16,-25,-40 BC338,-16,-25,-40

1.0 1.0
TJ = 25°C TA = 25°C
0.8 0.8
VBE(on) @ VCE = 1 V
V, VOLTAGE (VOLTS)
0.6 0.6
IC = 10 mA 100 mA 300 mA 500 mA

0.4 0.4
0.2 0.2
0 0
0.01 0.1 1 10 100 1 10 100 1000
Figure 4. Saturation Region Figure 5. “On” Voltages
100
+1
θVC for VCE(sat)
C, CAPACITANCE (pF)
0
Cib
10
–1
Cob
–2 θVB for VBE
1
1 10 100 1000 0.1 1 10 100
Figure 6. Temperature Coefficients Figure 7. Capacitances

MOTOROLA
COLLECTOR COLLECTOR NPN
2 2
BC368
3 3 PNP
BC369
BASE BASE
NPN PNP
1 1
EMITTER EMITTER
Voltage and current are negative
MAXIMUM RATINGS for PNP transistors

Collector – Emitter Voltage VCES 25 Vdc
Collector Current — Continuous IC 1.0 Adc
Derate above 25°C 5.0 mW/°C 1
2
3
Operating and Storage Junction TJ, Tstg – 55 to +150 °C TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc
(IC = 10 mA, IB = 0)
(IC = 100 µA, IE = 0 )
(IE = 100 µA, IC = 0)
(VCB = 25 V, IE = 0) — — 10 µAdc
(VCB = 25 V, IE = 0, TJ = 150°C) — — 1.0 mAdc
Emitter Cutoff Current IEBO — — 10 µAdc
(VEB = 5.0 V, IC = 0)
ON CHARACTERISTICS
(VCE = 10 V, IC = 5.0 mA) 50 — —
(VCE = 1.0 V, IC = 0.5 A) 85 — 375
(VCE = 1.0 V, IC = 1.0 A) 60 — —
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT 65 — — MHz
Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) — — 0.5 V
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) — — 1.0 V

NPN BC368 PNP BC369
200 1.0
TJ = 25°C
VCE , COLLECTOR VOLTAGE (VOLTS)

0.8
hFE, CURRENT GAIN
100
0.6
70 50 mA
50 0.4 100 mA
VCE = 1.0 V
TJ = 25°C 1000 mA
0.2 500 mA
IC = 10 mA
250 mA
20 0
10 20 50 100 200 500 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
1.0 –0.8
θ VB , TEMPERATURE COEFFICIENT (mV/ °C)

0.8 –1.2
V, VOLTAGE (VOLTS)

0.6 –1.6
0.4 –2.0 θVB for VBE
0.2 –2.4
0 –2.8
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
Figure 3. “On” Voltages Figure 4. Temperature Coefficient

300 160
TJ = 25°C
200
120
C, CAPACITANCE (pF)
100 80
70 Cibo
VCE = 10 V 40
50 TJ = 25°C
f = 20 MHz
Cobo
30 0
10 20 50 100 200 500 1000 Cobo 5.0 10 15 20 25
Cibo 1.0 2.0 3.0 4.0 5.0

MOTOROLA
High Voltage BC372

Darlington Transistors BC373
NPN Silicon
COLLECTOR 3
BASE
2
1
2
3
EMITTER 1

TO–92 (TO–226AA)
MAXIMUM RATINGS
Collector – Emitter Voltage VCES 100 80 Vdc
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CES Vdc
(IC = 100 mAdc, IB = 0) BC372 100 — —
BC373 80 — —
(IC = 100 mAdc, IE = 0) BC372 100 — —
BC373 80 — —
(IE = 10 mAdc, IC = 0)
(VCB = 80 Vdc, IE = 0) BC372 — — 100
(VCB = 60 Vdc, IE = 0) BC373 — — 100
(VEB = 10 V, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

BC372 BC373
DC Current Gain hFE K
(IC = 250 mAdc, VCE = 5.0 Vdc) 8.0 — —
(IC = 100 mAdc, VCE = 5.0 Vdc) 10 — 160
Collector – Emitter Saturation Voltage VCE(sat) — 1.0 1.1 Vdc
(IC = 250 mAdc, IB = 0.25 mAdc)
(IC = 250 mAdc, IB = 0.25 mAdc)
Current–Gain Bandwidth Product fT 100 200 — MHz
(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance Cob — 10 25 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure NF — 2.0 — dB
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz)
100 K 1.6
VCE = 5 V VBE(sat) @ IC/IB = 100
1.4
TA = 125°C
1.2 VBE(on) @ VCE = 5 V

25°C 1
VOLTAGE (V)
10 K –55°C 0.8
0.6 VCE(sat) @ IC/IB = 100
0.4
0.2
1K 0
1 10 100 1000 5 10 100 500
Figure 1. DC Current Gain Figure 2. “Saturation” and “On” Voltages

1000 100
VCE = 5 V
TJ = 25°C
C, CAPACITANCE (pF)
Cib
Cob
100 10
10 1
0.6 1 10 100 600 0.1 10 100

MOTOROLA
High Current Transistors

NPN Silicon
BC489,A,B
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO 80 — — Vdc
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
(IC = 10 mAdc, VCE = 2.0 Vdc) 40 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489 60 — 400
BC489A 100 160 250
BC489B 160 260 400
(IC = 1.0 Adc, VCE = 5.0 Vdc)* 15 — —
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.

BC489,A,B

ON CHARACTERISTICS* (Continued)
(IC = 500 mAdc, IB = 50 mAdc) — 0.2 0.5
(IC = 1.0 Adc, IB = 100 mAdc) — 0.3 —
(IC = 500 mAdc, IB = 50 mAdc) — 0.85 1.2
(IC = 1.0 Adc, IB = 100 mAdc)(1) — 0.9 —
Current–Gain — Bandwidth Product fT — 200 — MHz
Output Capacitance Cob — 7.0 — pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cib — 50 — pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
TURN–ON TIME TURN–OFF TIME
–1.0 V VCC +VBB VCC

5.0 µs +40 V +40 V
100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns 5.0 µF 5.0 µF
100 *CS < 6.0 pF 100 *CS < 6.0 pF
5.0 µs
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits

BC489,A,B

300 80
VCE = 2.0 V 60 TJ = 25°C
200 TJ = 25°C
40 Cibo
C, CAPACITANCE (pF)
100 20
70
10
50 8.0
6.0
Cobo
30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
1.0 k
700
500 ts
300
200
t, TIME (ns)
100
70 tf
50
VCC = 40 V
30 tr
IC/IB = 10
20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V
10
5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 4. Switching Time
1.0
0.7
D = 0.5
0.5
0.3 0.2
0.1 P(pk)
0.2
(NORMALIZED)
t1
0.1 0.02 t2
0.07 0.01 DUTY CYCLE, D = t1/t2
0.05 SINGLE PULSE D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.03 SINGLE PULSE READ TIME AT t1 (SEE AN–469)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

BC489,A,B
1.0 k
700 100 µs
500

1.0 ms
300 1.0 s
200
TC = 25°C
TA = 25°C
100
70
50
CURRENT LIMIT
30 THERMAL LIMIT
20 SECOND BREAKDOWN LIMIT
BC489
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. Active Region — Safe Operating Area
400
TJ =125°C VCE = 1.0 V

200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 0.6 mA
0.4 0.4
0.2 0.2
0 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Figure 8. “On” Voltages Figure 9. Collector Saturation Region

BC489,A,B
–0.8 –1.0
RθVB, TEMPERATURE COEFFICIENT (mV/°C)

TJ = 25°C
–1.2 –0.8
V, VOLTAGE (VOLTS)
–1.6 –0.6
RθVB for VBE
–2.0 –0.4
–2.4 –0.2
–2.8 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 10. Base–Emitter Temperature Coefficient Figure 11. “On” Voltages

–1.0 –0.8

TJ = 25°C
–0.8 –1.2
–0.6 –1.6
RθVB for VBE

–0.4 –2.0
IC = –10 mA –50 mA –100 mA –250 mA –500 mA
–0.2 –2.4
0 –2.8
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 12. Collector Saturation Region Figure 13. Base–Emitter Temperature Coefficient

MOTOROLA

PNP Silicon
BC490,A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
3
Collector – Emitter Voltage VCEO –80 Vdc
Collector – Base Voltage VCBO –80 Vdc
TO–92 (TO–226AA)
Collector Current — Continuous IC –0.5 Adc
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO –80 — — Vdc
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO –80 — — Vdc
(IC = –100 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current ICBO — — –100 nAdc
(VCB = –60 Vdc, IE = 0)
ON CHARACTERISTICS*
(IC = –10 mAdc, VCE = –2.0 Vdc) 40 — —
(IC = –100 mAdc, VCE = –2.0 Vdc) BC490 60 — 400
BC490A 100 140 250
(IC = –1.0 Adc, VCE = –5.0 Vdc) 15 — —

BC490,A

Characteristic Symbol Min Min Max Unit
ON CHARACTERISTICS(1) (Continued)
(IC = –500 mAdc, IB = –50 mAdc) — –0.25 –0.5
(IC = –1.0 Adc, IB = –100 mAdc) — –0.5 —
(IC = –500 mAdc, IB = –50 mAdc) — –0.9 –1.2
(IC = –1.0 Adc, IB = –100 mAdc) — –1.0 —
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

5.0 µs +40 V +40 V
100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns 5.0 µF 5.0 µF
100 *CS < 6.0 pF 100 *CS < 6.0 pF
5.0 µs
tr = 3.0 ns


BC490,A

200 100
VCE = –2.0 V 70 TJ = 25°C
TJ = 25°C Cibo
50
C, CAPACITANCE (pF)
100
30
70
20
50
10 Cobo
30
7.0
20 5.0
–2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
1.0 k
700
500
300 ts
200
t, TIME (ns)
100
70 td @ VBE(off) = –0.5 V tf
50
30 VCC = –40 V
IC/IB = 10
20 IB1 = IB2
TJ = 25°C tr
10
–5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
Figure 4. Switching Time
1.0
0.7
D = 0.5
0.5
0.3 0.2
0.1 P(pk)
0.2
(NORMALIZED)
t1
0.1 0.02 t2
0.07 0.01 DUTY CYCLE, D = t1/t2
0.05 SINGLE PULSE D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.03 SINGLE PULSE READ TIME AT t1 (SEE AN–469)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

BC490,A
–1.0 k 1.0
–700 100 µs TJ = 25°C
IC, COLLECTOR CURRENT (mA) –500
0.8
–300 1.0 s VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
–200 1.0 ms 0.6 VBE(on) @ VCE = 1.0 V
TA = 25°C TC = 25°C
–100
–70 0.4
–50
CURRENT LIMIT
–30 THERMAL LIMIT
SECOND BREAKDOWN LIMIT 0.2
–20
–10 BC490 0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Active Region, Safe Operating Area Figure 7. “On” Voltages

1.0 –0.8

TJ = 25°C
0.8 –1.2
IC = 10 mA 50 500 mA
100 mA 250 mA
0.6 mA –1.6
0.4 –2.0
RθVB for VBE
0.2 –2.4
0 –2.8
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500
400
TJ = 125°C
VCE = –1.0 V
200
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

BC490,A

–1.0 –1.0
TJ = 25°C TJ = 25°C
–0.8 –0.8
V, VOLTAGE (VOLTS)
–0.6 –0.6 –50

VBE(on) @ VCE = –1.0 V IC = –10 mA –100 mA –250 mA –500 mA
mA
–0.4 –0.4
–0.2 –0.2
0 0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
–0.8
–1.2
–1.6
–2.0 RθVB for VBE
–2.4
–2.8
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 13. Base–Emitter Temperature Coefficient

MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 1
BC517
BASE
2
EMITTER 3
MAXIMUM RATINGS 1
2

Collector – Base Voltage VCB 40 Vdc TO–92 (TO–226AA)
Emitter – Base Voltage VEB 10 Vdc
Total Power Dissipation @ TC = 25°C PD 1.5 Watts
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CES 30 — — Vdc
(IC = 2.0 mAdc, VBE = 0)
(IC = 10 mAdc, IE = 0)
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current ICES — — 500 nAdc
(VCE = 30 Vdc)
(VCB = 30 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)

BC517
DC Current Gain hFE 30,000 — — —
Base – Emitter On Voltage VBE(on) — — 1.4 Vdc

Current – Gain — Bandwidth Product(2) fT — 200 — MHz
1. Pulse Test: Pulse Width v 2.0%.

2. fT = |hfe| • ftest
RS
in
en
IDEAL
TRANSISTOR

BC517
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

BC517
20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

BC517
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40

MOTOROLA
BC546, B
NPN Silicon
BC547, A, B, C
BC548, A, B, C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V
(IC = 1.0 mA, IB = 0) BC547 45 — —
BC548 30 — —
Collector – Base Breakdown Voltage BC546 V(BR)CBO 80 — — V
(IC = 100 µAdc) BC547 50 — —
BC548 30 — —
Emitter – Base Breakdown Voltage BC546 V(BR)EBO 6.0 — — V
(IE = 10 mA, IC = 0) BC547 6.0 — —
BC548 6.0 — —
(VCE = 70 V, VBE = 0) BC546 — 0.2 15 nA
(VCE = 50 V, VBE = 0) BC547 — 0.2 15
(VCE = 35 V, VBE = 0) BC548 — 0.2 15
(VCE = 30 V, TA = 125°C) BC546/547/548 — — 4.0 µA
REV 1

BC546, B BC547, A, B, C BC548, A, B, C

ON CHARACTERISTICS
(IC = 10 µA, VCE = 5.0 V) BC547A/548A — 90 —
BC546B/547B/548B — 150 —
BC548C — 270 —
(IC = 2.0 mA, VCE = 5.0 V) BC546 110 — 450

BC547 110 — 800
BC548 110 — 800
BC547A/548A 110 180 220
BC546B/547B/548B 200 290 450
BC547C/BC548C 420 520 800
(IC = 100 mA, VCE = 5.0 V) BC547A/548A — 120 —

BC546B/547B/548B — 180 —
BC548C — 300 —
Collector – Emitter Saturation Voltage VCE(sat) V

(IC = 10 mA, IB = 0.5 mA) — 0.09 0.25
(IC = 100 mA, IB = 5.0 mA) — 0.2 0.6
(IC = 10 mA, IB = See Note 1) — 0.3 0.6
Base – Emitter Saturation Voltage VBE(sat) — 0.7 — V
(IC = 10 mA, IB = 0.5 mA)
(IC = 2.0 mA, VCE = 5.0 V) 0.55 — 0.7
(IC = 10 mA, VCE = 5.0 V) — — 0.77
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 —
BC547 150 300 —
BC548 150 300 —
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 125 — 500
BC547/548 125 — 900
BC547A/548A 125 220 260
BC546B/547B/548B 240 330 500
BC547C/548C 450 600 900
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, BC546 — 2.0 10
f = 1.0 kHz, ∆f = 200 Hz) BC547 — 2.0 10
BC548 — 2.0 10
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

BC546, B BC547, A, B, C BC548, A, B, C
2.0 1.0
VCE = 10 V TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN
1.5 0.9
TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6 VBE(on) @ VCE = 10 V
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
2.0 1.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)
θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C –55°C to +125°C
1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
BC547/BC548
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)
5.0 Cib
VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

BC546, B BC547, A, B, C BC548, A, B, C
BC547/BC548
hFE , DC CURRENT GAIN (NORMALIZED) 1.0
TA = 25°C
VCE = 5 V
TA = 25°C 0.8
V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5
0.2
0.2
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
Figure 7. DC Current Gain Figure 8. “On” Voltage

2.0 –1.0

TA = 25°C
1.6 –1.4
20 mA 50 mA 100 mA 200 mA
1.2 –1.8
θVB for VBE
IC = –55°C to 125°C
0.8 –2.2
10 mA
0.4 –2.6
0 –3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
BC546
40
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)
Cib
200
10
100
6.0 50
4.0 Cob
20
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

MOTOROLA
Low Noise Transistors

NPN Silicon BC549B,C
BC550B,C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) BC549B,C 30 — —
BC550B,C 45 — —
(IC = 10 µAdc, IE = 0) BC549B,C 30 — —
BC550B,C 50 — —
(IE = 10 mAdc, IC = 0)
(VCB = 30 V, IE = 0) — — 15 nAdc
(VCB = 30 V, IE = 0, TA = +125°C) — — 5.0 µAdc
(VEB = 4.0 Vdc, IC = 0)

BC549B,C BC550B,C

ON CHARACTERISTICS
(IC = 10 µAdc, VCE = 5.0 Vdc) BC549B/550B 100 150 —
BC549C/550C 100 270 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B 200 290 450
BC549C/550C 420 500 800
(IC = 10 mAdc, IB = 0.5 mAdc) — 0.075 0.25
(IC = 10 mAdc, IB = see note 1) — 0.3 0.6
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2) — 0.25 0.6
Base–Emitter Saturation Voltage VBE(sat) — 1.1 — Vdc
Base–Emitter On Voltage VBE(on) Vdc
(IC = 10 µAdc, VCE = 5.0 Vdc) — 0.52 —
(IC = 100 µAdc, VCE = 5.0 Vdc) — 0.55 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.62 0.7
Collector–Base Capacitance Ccbo — 2.5 — pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B 240 330 500
BC549C/BC550C 450 600 900
Noise Figure dB
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) NF1 — 0.6 2.5
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) NF2 — — 10
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
RS
in
en
IDEAL
TRANSISTOR

BC549B,C BC550B,C
2.0 1.0
VCE = 10 V TA = 25°C
1.5 0.9
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

10
400
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF)
5.0 Cib
100
80 VCE = 10 V
TA = 25°C 3.0
60
Cob
40
30 2.0
20
1.0
0.5 0.7 1.0 2.0 5.0 7.0 10 20 50 0.4 0.6 1.0 2.0 4.0 10 20 40
170
160
150
VCE = 10 V
f = 1.0 kHz
140
TA = 25°C
130
120
0.1 0.2 0.5 1.0 2.0 5.0 10

MOTOROLA
PNP Silicon BC556,B
BC557,A,B,C
COLLECTOR BC558B
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol BC556 BC557 BC558 Unit 2
3
Collector – Emitter Voltage VCEO –65 –45 –30 Vdc
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO V
(IC = –2.0 mAdc, IB = 0) BC556 –65 — —
BC557 –45 — —
BC558 –30 — —
Collector – Base Breakdown Voltage V(BR)CBO V
(IC = –100 µAdc) BC556 –80 — —
BC557 –50 — —
BC558 –30 — —
Emitter – Base Breakdown Voltage V(BR)EBO V
(IE = –100 mAdc, IC = 0) BC556 –5.0 — —
BC557 –5.0 — —
BC558 –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –40 V) BC556 — –2.0 –100 nA
(VCES = –20 V) BC557 — –2.0 –100
BC558 — –2.0 –100
(VCES = –20 V, TA = 125°C) BC556 — — –4.0 µA
BC557 — — –4.0
BC558 — — –4.0

BC556,B BC557,A,B,C BC558B

ON CHARACTERISTICS
(IC = –10 µAdc, VCE = –5.0 V) BC557A — 90 —
BC556B/557B/558B — 150 —
BC557C — 270 —
(IC = –2.0 mAdc, VCE = –5.0 V) BC556 120 — 500
BC557 120 — 800
BC558 120 — 800
BC557A 120 170 220
BC556B/557B/558B 180 290 460
BC557C 420 500 800
(IC = –100 mAdc, VCE = –5.0 V) BC557A — 120 —
BC556B/557B/558B — 180 —
BC557C — 300 —
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.075 –0.3
(IC = –10 mAdc, IB = see Note 1) — –0.3 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc) — –0.25 –0.65
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.7 —
(IC = –100 mAdc, IB = –5.0 mAdc) — –1.0 —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.55 –0.62 –0.7
(IC = –10 mAdc, VCE = –5.0 Vdc) — –0.7 –0.82
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556 — 280 —
BC557 — 320 —
BC558 — 360 —
Output Capacitance Cob — 3.0 6.0 pF
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 V, BC556 — 2.0 10
RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) BC557 — 2.0 10
BC558 — 2.0 10
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC556 125 — 500
BC557/558 125 — 900
BC557A 125 220 260
BC556B/557B/558B 240 330 500
BC557C 450 600 900
Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

BC557/BC558
2.0 –1.0
TA = 25°C
1.5 VCE = –10 V –0.9

TA = 25°C –0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0 –0.7
–0.6 VBE(on) @ VCE = –10 V
0.7
–0.5
0.5 –0.4
–0.3
0.3 –0.2
–0.1 VCE(sat) @ IC/IB = 10
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–2.0 1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C –55°C to +125°C

1.2
–1.6
1.6
–1.2
2.0
IC = IC = –50 mA IC = –200 mA
–0.8
–10 mA
2.4
IC = –100 mA
IC = –20 mA
–0.4
2.8
0
–0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)
5.0 150 VCE = –10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30
1.0 20
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

BC556
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
TJ = 25°C
VCE = –5.0 V
TA = 25°C –0.8
V, VOLTAGE (VOLTS)
2.0
–0.6
VBE @ VCE = –5.0 V
1.0
–0.4
0.5
–0.2
0
–0.1 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (mA)

–2.0 –1.0
–1.6 θVB, TEMPERATURE COEFFICIENT (mV/ °C) –1.4

IC = –20 mA –50 mA –100 mA –200 mA
–1.2 –10 mA –1.8
θVB for VBE
–55°C to 125°C
–0.8 –2.2
–0.4 –2.6
TJ = 25°C
0 –3.0
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
40
VCE = –5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)
200
10 100
8.0
6.0 50
Cob
4.0
20
2.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
0.3
0.2 SINGLE PULSE
0.05
0.1 ZθJC(t) = (t) RθJC
0.1 P(pk) RθJC = 83.3°C/W MAX
0.07 SINGLE PULSE ZθJA(t) = r(t) RθJA
0.05 t1 RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
0.03 t2 PULSE TRAIN SHOWN
TJ(pk) – TC = P(pk) RθJC(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
–200
1s 3 ms
–100
TA = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector load
–50
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
BC558 variable depending upon conditions. Pulse curves are valid for duty
–10
BC557 cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
BC556 the data in Figure 13. At high case or ambient temperatures, thermal
–5.0 limitations will reduce the power than can be handled to values less
BONDING WIRE LIMIT
THERMAL LIMIT
–2.0
–1.0 –5.0 –10 –30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)

MOTOROLA
Low Noise Transistors BC559B

BC559C
PNP Silicon
COLLECTOR
1
BC560C
2
BASE
3
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol BC559x BC560C Unit
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0) BC559B, C –30 — —
BC560C –45 — —
(IC = –10 µAdc, IE = 0) BC559B, C –30 — —
BC560C –50 — —
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0) — — –15 nAdc
(VCB = –30 Vdc, IE = 0, TA = +125°C) — — –5.0 µAdc
(VEB = –4.0 Vdc, IC = 0)
replaces BC559/D

BC559B BC559C BC560C
ON CHARACTERISTICS
(IC = –10 µAdc, VCE = –5.0 Vdc) BC559B 100 150 —
BC559C/560C 100 270 —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC559B 180 290 460
BC559C/560C 380 500 800
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.075 –0.25
(IC = –10 mAdc, IB = see note 1) — –0.3 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc, see note 2) — –0.25 —
Base–Emitter Saturation Voltage VBE(sat) — –1.1 — Vdc
(IC = –100 mAdc, IB = –5.0 mAdc)
(IC = –10 µAdc, VCE = –5.0 Vdc) — –0.52 —
(IC = –100 µAdc, VCE = –5.0 Vdc) — –0.55 —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.55 –0.62 –0.7
Collector–Base Capacitance Ccbo — 2.5 — pF
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B 240 330 500
BC559C/BC560C 450 600 900
Noise Figure dB
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) NF1 — 0.5 2.0
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) NF2 — — 10
NOTES:
1. IB is value for which IC = –11 mA at VCE = –1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.

BC559B BC559C BC560C
2.0 –1.0
VCE = –10 V TA = 25°C
1.5 –0.9
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
1.0 –0.7
VBE(on) @ VCE = –10 V
0.8 –0.6
0.6 –0.5
–0.4
0.4 –0.3
0.3 –0.2
–0.1
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

10
400
300
7.0
200 TA = 25°C
C, CAPACITANCE (pF)
5.0 Cib
100
80 VCE = –10 V
60 3.0
TA = 25°C
Cob
40
30 2.0
20
1.0
–0.5 –0.7 –1.0 –2.0 –5.0 –7.0 –10 –20 –50 –0.4 –0.6 –1.0 –2.0 –4.0 –10 –20 –40
170
160
150
VCE = –10 V
f = 1.0 kHz
140
TA = 25°C
130
120
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10

MOTOROLA
NPN Silicon
BC618
COLLECTOR 1
BASE
2
EMITTER 3
1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, VBE = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCE = 60 Vdc, VBE = 0)
(VCB = 60 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)

BC618
ON CHARACTERISTICS
(IC = 200 mA, IB = 0.2 mA)
Base – Emitter Saturation Voltage VBE(sat) — — 1.6 Vdc
(IC = 200 mA, IB = 0.2 mA)
(IC = 100 µA, VCE = 5.0 Vdc) 2000 — —
(IC = 10 mA, VCE = 5.0 Vdc) 4000 — —
(IC = 200 mA, VCE = 5.0 Vdc) 10000 — 50000
(IC = 1.0 A, VCE = 5.0 Vdc) 4000 — —
Current – Gain — Bandwidth Product fT 150 — — MHz
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Input Capacitance Cib — 5.0 9.0 pF
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)
RS
in
en
IDEAL
TRANSISTOR

BC618
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

BC618
20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

BC618
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40

MOTOROLA

NPN Silicon BC635
BC637
COLLECTOR
BC639
2
3
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) BC635 45 — —
BC637 60 — —
BC639 80 — —
(IC = 100 µAdc, IE = 0) BC635 45 — —
BC637 60 — —
BC639 80 — —
(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0) — — 100 nAdc
(VCB = 30 Vdc, IE = 0, TA = 125°C) — — 10 µAdc
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

BC635 BC637 BC639
(IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 — —
(IC = 150 mAdc, VCE = 2.0 Vdc) BC635 40 — 250
BC637 40 — 160
BC639 40 — 160
(IC = 500 mA, VCE = 2.0 V) 25 — —
(IC = 500 mAdc, IB = 50 mAdc)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

BC635 BC637 BC639
1000 500
500 VCE = 2 V
SOA = 1S
200 PD TA 25°C

200
100
50 PD TC 25°C
100
20
10
50
5
BC635
PD TA 25°C
2 BC637
PD TC 25°C
BC639
1 20
1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000
Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain

500 1
300
V, VOLTAGE (VOLTS)
VBE(on) @ VCE = 2 V
0.6
VCE = 2 V
100
0.4
50
0.2
20 0
1 10 100 1000 1 10 100 1000
Figure 3. Current–Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages
–0.2
–1.0
VCE = 2 VOLTS
∆T = 0°C to +100°C
–1.6
θV for VBE
–2.2
1 3 5 10 30 50 100 300 500 1000

MOTOROLA

PNP Silicon BC636
BC638
COLLECTOR
2
BC640
3
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS CASE 29–04, STYLE 14

Rating Symbol BC636 BC638 BC640 Unit TO–92 (TO–226AA)
Collector – Emitter Voltage VCEO –45 –60 –80 Vdc
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage* V(BR)CEO Vdc
(IC = –10 mAdc, IB = 0) BC636 –45 — —
BC638 –60 — —
BC640 –80 — —
(IC = –100 µAdc, IE = 0) BC636 –45 — —
BC638 –60 — —
BC640 –80 — —
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0) — — –100 nAdc
(VCB = –30 Vdc, IE = 0, TA = 125°C) — — –10 µAdc

BC636 BC638 BC640
(IC = –5.0 mAdc, VCE = –2.0 Vdc) 25 — —
(IC = –150 mAdc, VCE = –2.0 Vdc) BC636 40 — 250
BC638 40 — 160
BC640 40 — 160
(IC = –500 mA, VCE = –2.0 V) 25 — —
Collector – Emitter Saturation Voltage VCE(sat) — –0.25 –0.5 Vdc
(IC = –500 mAdc, IB = –50 mAdc) — –0.5 —
Base–Emitter On Voltage VBE(on) — — –1.0 Vdc
(IC = –500 mAdc, VCE = –2.0 Vdc)
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

BC636 BC638 BC640
–1000 500
–500 VCE = –2 V
SOA = 1S
IC, COLLECTOR CURRENT (mA) –B
–200 PD TA 25°C

200
–100
–A
–50 PD TC 25°C –L
100
–20
–10
50
–5
BC636
PD TA 25°C
–2 BC638
PD TC 25°C
BC640
–1 20
–1 –2 –3 –4 –5 –7 –10 –20 –30–40 –50 –70 –100 –1 –3 –5 –10 –30 –50 –100 –300 –500 –1000
Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain

500 –1
300
–0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
–0.6 VBE(on) @ VCE = –2 V
VCE = –2 V
100
–0.4
50
–0.2
20 0
–1 –10 –100 –1000 –1 –10 –100 –1000
Figure 3. Current Gain Bandwidth Product Figure 4. “Saturation” and “On” Voltages
–0.2
–1.0
VCE = –2 VOLTS
∆T = 0°C to +100°C
–1.6
θV for VBE
–2.2
–1 –3 –5 –10 –30 –50 –100 –300 –500 –1000

MOTOROLA
General Purpose Transistors BC807-16LT1

PNP Silicon
COLLECTOR
BC807-25LT1
3
BC807-40LT1
2
BASE
1 3
EMITTER
1
2
MAXIMUM RATINGS
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Collector – Emitter Voltage VCEO –45 V
Collector – Base Voltage VCBO –50 V
Emitter – Base Voltage VEBO –5.0 V
Total Device Dissipation FR– 5 Board, (1) PD
TA = 25°C 225 mW
Total Device Dissipation PD
Alumina Substrate, (2) TA = 25°C 300 mW
Junction and Storage Temperature TJ, Tstg – 55 to +150 °C
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO –45 — — V
(IC = –10 mA)
Collector – Emitter Breakdown Voltage V(BR)CES –50 — — V
(VEB = 0, IC = –10 µA)
Emitter – Base Breakdown Voltage V(BR)EBO –5.0 — — V
(IE = –1.0 mA)
(VCB = –20 V) — — –100 nA
(VCB = –20 V, TJ = 150°C) — — –5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV 1

BC807-16LT1 BC807-25LT1 BC807-40LT1

ON CHARACTERISTICS
(IC = –100 mA, VCE = –1.0 V) BC807–16 100 — 250
BC807–25 160 — 400
BC807–40 250 — 600
(IC = –500 mA, VCE = –1.0 V) 40 — —
Collector – Emitter Saturation Voltage VCE(sat) — — –0.7 V
(IC = –500 mA, IB = –50 mA)
Base – Emitter On Voltage VBE(on) — — –1.2 V
(IC = –500 mA, IB = –1.0 V)
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance Cobo — 10 — pF
(VCB = –10 V, f = 1.0 MHz)

MOTOROLA
General Purpose Transistors BC817-16LT1

NPN Silicon
COLLECTOR
BC817-25LT1
3
BC817-40LT1
1
BASE
2 3
EMITTER
1
2
MAXIMUM RATINGS
SOT– 23 (TO – 236AB)
Collector – Emitter Voltage VCEO 45 V
Collector – Base Voltage VCBO 50 V
Emitter – Base Voltage VEBO 5.0 V
TA = 25°C 225 mW
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 45 — — V
(IC = –10 mA)
Collector – Emitter Breakdown Voltage V(BR)CES 50 — — V
(VEB = 0, IC = –10 µA)
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — — V
(IE = –1.0 mA)
(VCB = 20 V) — — 100 nA
(VCB = 20 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
REV 2

BC817-16LT1 BC817-25LT1 BC817-40LT1

ON CHARACTERISTICS
(IC = 100 mA, VCE = 1.0 V) BC817–16 100 — 250
BC817–25 160 — 400
BC817–40 250 — 600
(IC = 500 mA, VCE = 1.0 V) 40 — —
Collector – Emitter Saturation Voltage VCE(sat) — — 0.7 V
(IC = 500 mA, IB = 50 mA)
Base – Emitter On Voltage VBE(on) — — 1.2 V
(IC = 500 mA, VCE = 1.0 V)
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance Cobo — 10 — pF
(VCB = 10 V, f = 1.0 MHz)

MOTOROLA

BC846ALT1,BLT1
COLLECTOR
NPN Silicon 3 BC847ALT1,
BLT1,CLT1 thru
1
BASE BC850BLT1,CLT1
2 BC846, BC847 and BC848 are

EMITTER Motorola Preferred Devices
MAXIMUM RATINGS
BC847 BC848
3
Collector – Emitter Voltage VCEO 65 45 30 V
Collector – Base Voltage VCBO 80 50 30 V 1
Emitter – Base Voltage VEBO 6.0 6.0 5.0 V 2
Collector Current — Continuous IC 100 100 100 mAdc

THERMAL CHARACTERISTICS SOT– 23 (TO – 236AB)
TA = 25°C 225 mW
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B V(BR)CEO 65 — — V
(IC = 10 mA) BC847A,B,C, BC850B,C 45 — —
BC848A,B,C, BC849B,C 30 — —
Collector – Emitter Breakdown Voltage BC846A,B V(BR)CES 80 — — V
(IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C 50 — —
BC848A,B,C, BC849B,C 30 — —
Collector – Base Breakdown Voltage BC846A,B V(BR)CBO 80 — — V
(IC = 10 mA) BC847A,B,C, BC850B,C 50 — —
BC848A,B,C, BC849B,C 30 — —
Emitter – Base Breakdown Voltage BC846A,B V(BR)EBO 6.0 — — V
(IE = 1.0 mA) BC847A,B,C 6.0 — —
BC848A,B,C, BC849B,C, BC850B,C 5.0 — —
Collector Cutoff Current (VCB = 30 V) ICBO — — 15 nA
(VCB = 30 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV 1

BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1

ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A hFE — 90 — —
(IC = 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B — 150 —
BC847C, BC848C — 270 —
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220
BC846B, BC847B, BC848B, BC849B, BC850B 200 290 450
BC847C, BC848C, BC849C, BC850C 420 520 800
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) — — 0.25 V
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) — — 0.6
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) — 0.7 — V
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) — 0.9 —
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) — — 770
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (IC = 0.2 mA, BC846A, BC847A, BC848A NF dB
VCE = 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 10
BC849B,C, BC850B,C — — 4.0
2.0 1.0
VCE = 10 V TA = 25°C
1.5 0.9
TA = 25°C
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6 VBE(on) @ VCE = 10 V
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
2.0 1.0
TA = 25°C –55°C to +125°C

1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100

BC847/BC848

10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)
5.0 Cib
VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0
TA = 25°C
VCE = 5 V
TA = 25°C 0.8
V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5
0.2
0.2
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

2.0 –1.0
TA = 25°C
1.6 –1.4
20 mA 50 mA 100 mA 200 mA
1.2 –1.8
θVB for VBE
IC = –55°C to 125°C
0.8 –2.2
10 mA
0.4 –2.6
0 –3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

BC846
40

TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)
Cib
200
10
100
6.0 50
4.0 Cob
20
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100

MOTOROLA

BC846AWT1,BWT1
NPN Silicon BC847AWT1,BWT1,
COLLECTOR
CWT1
These transistors are designed for general purpose amplifier 3
applications. They are housed in the SOT–323/SC–70 which is BC848AWT1,BWT1,
designed for low power surface mount applications. 1 CWT1
BASE
2
EMITTER
MAXIMUM RATINGS
3
Collector – Emitter Voltage VCEO 65 45 30 V 1
2
Collector – Base Voltage VCBO 80 50 30 V
Emitter – Base Voltage VEBO 6.0 6.0 5.0 V CASE 419–02, STYLE 3
SOT–323/SC–70
Collector Current — Continuous IC 100 100 100 mAdc
Total Device Dissipation FR– 5 Board, (1) PD 150 mW
TA = 25°C
Total Device Dissipation PD 2.4 mW/°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846 Series V(BR)CEO 65 — — V
(IC = 10 mA) BC847 Series 45 — —
BC848 Series 30 — —
Collector – Emitter Breakdown Voltage BC846 Series V(BR)CES 80 — — V
(IC = 10 µA, VEB = 0) BC847 Series 50 — —
Collector – Base Breakdown Voltage BC846 Series V(BR)CBO 80 — — V
(IC = 10 mA) BC847 Series 50 — —
Emitter – Base Breakdown Voltage BC846 Series V(BR)EBO 6.0 — — V
(IE = 1.0 mA) BC847 Series 6.0 — —
BC848 Series 5.0 — —
Collector Cutoff Current (VCB = 30 V) ICBO — — 15 nA
(VCB = 30 V, TA = 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in

BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

ON CHARACTERISTICS
(IC = 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B — 150 —
BC847C, BC848C — 270 —
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220
BC846B, BC847B, BC848B 200 290 450
BC847C, BC848C 420 520 800
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) — — 0.25 V
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) — — 0.6
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) — 0.7 — V
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) — 0.9 —
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) — — 770
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (IC = 0.2 mA, BC846A, BC847A, BC848A NF dB
VCE = 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B — — 10
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 4.0
2.0 1.0
VCE = 10 V TA = 25°C
1.5 0.9
TA = 25°C
V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6 VBE(on) @ VCE = 10 V
0.6 0.5
0.4
0.4 0.3
0.3 0.2
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
2.0 1.0
TA = 25°C –55°C to +125°C

1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100

BC847/BC848

10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)
5.0 Cib
VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0
TA = 25°C
VCE = 5 V
TA = 25°C 0.8
V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5
0.2
0.2
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

2.0 –1.0
TA = 25°C
1.6 –1.4
20 mA 50 mA 100 mA 200 mA
1.2 –1.8
θVB for VBE
IC = –55°C to 125°C
0.8 –2.2
10 mA
0.4 –2.6
0 –3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

BC846
40

TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)
Cib
200
10
100
6.0 50
4.0 Cob
20
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100

MOTOROLA

BC856ALT1,BLT1
PNP Silicon BC857ALT1,BLT1
COLLECTOR
3
BC858ALT1,BLT1,
CLT1
1
BASE
Motorola Preferred Devices

2
EMITTER
MAXIMUM RATINGS
Collector – Emitter Voltage VCEO –65 –45 –30 V 3
Collector – Base Voltage VCBO –80 –50 –30 V

1
Emitter – Base Voltage VEBO –5.0 –5.0 –5.0 V 2
Collector Current — Continuous IC –100 –100 –100 mAdc
THERMAL CHARACTERISTICS CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)
TA = 25°C 225 mW
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC856 Series V(BR)CEO –65 — — V
(IC = –10 mA) BC857 Series –45 — —
BC858 Series –30 — —
Collector – Emitter Breakdown Voltage BC856 Series V(BR)CES –80 — — V
(IC = –10 µA, VEB = 0) BC857 Series –50 — —
Collector – Base Breakdown Voltage BC856 Series V(BR)CBO –80 — — V
(IC = –10 mA) BC857 Series –50 — —
Emitter – Base Breakdown Voltage BC856 Series V(BR)EBO –5.0 — — V
(IE = –1.0 mA) BC857 Series –5.0 — —
BC858 Series –5.0 — —
Collector Cutoff Current (VCB = –30 V) ICBO — — –15 nA
Collector Cutoff Current (VCB = –30 V, TA = 150°C) — — –4.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV 1

BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

ON CHARACTERISTICS
(IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC858A — 150 —
BC858C — 270 —
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A 125 180 250
BC856B, BC857B, BC858B 220 290 475
BC858C 420 520 800
(IC = –10 mA, IB = –0.5 mA) — — –0.3
(IC = –100 mA, IB = –5.0 mA) — — –0.65
(IC = –10 mA, IB = –0.5 mA) — –0.7 —
(IC = –100 mA, IB = –5.0 mA) — –0.9 —
Base – Emitter On Voltage VBE(on) V
(IC = –2.0 mA, VCE = –5.0 V) –0.6 — –0.75
(IC = –10 mA, VCE = –5.0 V) — — –0.82
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance Cob — — 4.5 pF
(VCB = –10 V, f = 1.0 MHz)
Noise Figure NF — — 10 dB
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

BC857/BC858
2.0 –1.0
TA = 25°C
1.5 VCE = –10 V –0.9

TA = 25°C –0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0 –0.7
–0.6 VBE(on) @ VCE = –10 V
0.7
–0.5
0.5 –0.4
–0.3
0.3 –0.2
–0.1 VCE(sat) @ IC/IB = 10
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–2.0 1.0

TA = 25°C –55°C to +125°C

1.2
–1.6
1.6
–1.2
2.0
IC = IC = –50 mA IC = –200 mA
–0.8
–10 mA
2.4
IC = –100 mA
IC = –20 mA
–0.4
2.8
0
–0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)
5.0 150 VCE = –10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30
1.0 20
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

BC856
hFE , DC CURRENT GAIN (NORMALIZED) –1.0

TJ = 25°C
VCE = –5.0 V
TA = 25°C –0.8
V, VOLTAGE (VOLTS)
2.0
–0.6
VBE @ VCE = –5.0 V
1.0
–0.4
0.5
–0.2
0
–0.1 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

–2.0 –1.0

–1.6 –1.4
IC = –20 mA –50 mA –100 mA –200 mA
–1.2 –10 mA –1.8
θVB for VBE
–55°C to 125°C
–0.8 –2.2
–0.4 –2.6
TJ = 25°C
0 –3.0
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
40
VCE = –5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)
200
10 100
8.0
6.0 50
Cob
4.0
20
2.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100

1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1 ZθJC(t) = r(t) RθJC
0.05 t1 RθJA = 200°C/W MAX
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
–200
1s 3 ms
–100
–50
applicable curve.
–10
–5.0 limitations will reduce the power that can be handled to values less
BONDING WIRE LIMIT
than the limitations imposed by the secondary breakdown.
THERMAL LIMIT
–2.0
–1.0 –5.0 –10 –30 –45 –65 –100
Figure 14. Active Region Safe Operating Area

MOTOROLA
General Purpose Transistors BC856AWT1,BWT1

PNP Silicon BC857AWT1,BWT1
BC858AWT1,BWT1,
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is CWT1
designed for low power surface mount applications.
COLLECTOR
3
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS 2
Collector – Emitter Voltage VCEO –65 –45 –30 V SOT–323/SC–70
Collector – Base Voltage VCBO –80 –50 –30 V
Emitter – Base Voltage VEBO –5.0 –5.0 –5.0 V
Collector Current — Continuous IC –100 –100 –100 mAdc
Total Device Dissipation FR– 5 Board, (1) PD 150 mW
TA = 25°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC856 Series V(BR)CEO –65 — — V
(IC = –10 mA) BC857 Series –45 — —
Collector – Emitter Breakdown Voltage BC856 Series V(BR)CES –80 — — V
(IC = –10 µA, VEB = 0) BC857 Series –50 — —
Collector – Base Breakdown Voltage BC856 Series V(BR)CBO –80 — — V
(IC = –10 mA) BC857 Series –50 — —
Emitter – Base Breakdown Voltage BC856 Series V(BR)EBO –5.0 — — V
(IE = –1.0 mA) BC857 Series –5.0 — —
BC858 Series –5.0 — —
Collector Cutoff Current (VCB = –30 V) ICBO — — –15 nA
Collector Cutoff Current (VCB = –30 V, TA = 150°C) — — –4.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in

BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

ON CHARACTERISTICS
(IC = –10 µA, VCE = –5.0 V) BC856A, BC857A, BC858A — 150 —
BC858C — 270 —
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A 125 180 250
BC856B, BC857B, BC858B 220 290 475
BC858C 420 520 800
(IC = –10 mA, IB = –0.5 mA) — — –0.3
(IC = –100 mA, IB = –5.0 mA) — — –0.65
(IC = –10 mA, IB = –0.5 mA) — –0.7 —
(IC = –100 mA, IB = –5.0 mA) — –0.9 —
Base – Emitter On Voltage VBE(on) V
(IC = –2.0 mA, VCE = –5.0 V) –0.6 — –0.75
(IC = –10 mA, VCE = –5.0 V) — — –0.82
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance Cob — — 4.5 pF
(VCB = –10 V, f = 1.0 MHz)
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)

BC857/BC858
2.0 –1.0
TA = 25°C
1.5 VCE = –10 V –0.9

TA = 25°C –0.8 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0 –0.7
–0.6 VBE(on) @ VCE = –10 V
0.7
–0.5
0.5 –0.4
–0.3
0.3 –0.2
–0.1 VCE(sat) @ IC/IB = 10
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–2.0 1.0

TA = 25°C –55°C to +125°C

1.2
–1.6
1.6
–1.2
2.0
IC = IC = –50 mA IC = –200 mA
–0.8
–10 mA
2.4
IC = –100 mA
IC = –20 mA
–0.4
2.8
0
–0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)
5.0 150 VCE = –10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30
1.0 20
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

BC856
–1.0
TJ = 25°C
VCE = –5.0 V
TA = 25°C –0.8
V, VOLTAGE (VOLTS)
2.0
–0.6
VBE @ VCE = –5.0 V
1.0
–0.4
0.5
–0.2
0
–0.1 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

–2.0 –1.0
–1.6 θVB, TEMPERATURE COEFFICIENT (mV/ °C) –1.4

IC = –20 mA –50 mA –100 mA –200 mA
–1.2 –10 mA –1.8
θVB for VBE
–55°C to 125°C
–0.8 –2.2
–0.4 –2.6
TJ = 25°C
0 –3.0
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
40
VCE = –5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)
200
10 100
8.0
6.0 50
Cob
4.0
20
2.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
0.3
0.2 SINGLE PULSE
0.05
0.1 ZθJC(t) = r(t) RθJC
0.05 t1 RθJA = 200°C/W MAX
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
–200
1s 3 ms
–100
–50
applicable curve.
–10
–5.0 limitations will reduce the power that can be handled to values less
BONDING WIRE LIMIT
than the limitations imposed by the secondary breakdown.
THERMAL LIMIT
–2.0
–1.0 –5.0 –10 –30 –45 –65 –100

MOTOROLA
PNP Silicon BCP53T1

Epitaxial Transistor Motorola Preferred Device
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
applications. The device is housed in the SOT-223 package which is designed for MEDIUM POWER
medium power surface mount applications. PNP SILICON
HIGH CURRENT
• High Current: 1.5 Amps TRANSISTOR
• NPN Complement is BCP56 SURFACE MOUNT
• The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
4
• Available in 12 mm Tape and Reel COLLECTOR 2,4
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel. 1
BASE 2
3
1
CASE 318E-04, STYLE 1
TO-261AA
EMITTER 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Collector-Emitter Voltage VCEO – 80 Vdc
Collector-Base Voltage VCBO –100 Vdc
Emitter-Base Voltage VEBO – 5.0 Vdc
Collector Current IC 1.5 Adc
Total Power Dissipation @ TA = 25°C(1) PD 1.5 Watts
Operating and Storage Temperature Range TJ, Tstg – 65 to 150 °C
DEVICE MARKING
AH
Thermal Resistance — Junction-to-Ambient (surface mounted) RθJA 83.3 °C/W
Lead Temperature for Soldering, 0.0625″ from case TL 260 °C
Time in Solder Bath 10 Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
REV 1

BCP53T1
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –100 — — Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO – 80 — — Vdc
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V(BR)CER –100 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — — Vdc
Collector-Base Cutoff Current (VCB = – 30 Vdc, IE = 0) ICBO — — –100 nAdc
Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) IEBO — — –10 µAdc
ON CHARACTERISTICS
(IC = – 5.0 mAdc, VCE = – 2.0 Vdc) 25 — —
(IC = –150 mAdc, VCE = – 2.0 Vdc) 40 — 250
(IC = – 500 mAdc, VCE = – 2.0 Vdc) 25 — —
Collector-Emitter Saturation Voltage (IC = – 500 mAdc, IB = – 50 mAdc) VCE(sat) — — – 0.5 Vdc
Base-Emitter On Voltage (IC = – 500 mAdc, VCE = – 2.0 Vdc) VBE(on) — — –1.0 Vdc
Current-Gain — Bandwidth Product fT — 50 — MHz
(IC = –10 mAdc, VCE = – 5.0 Vdc, f = 35 MHz)

f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
500 500
VCE = 2 V
300
200
VCE = 2 V
100 100
50 50
20 20
1 3 5 10 30 50 100 300 500 1000 1 10 100 1000
Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product
1 120
110
100
0.8
V(BE)sat @ IC/IB = 10 90
V, VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
V(BE)on @ VCE = 2 V 80
0.6 70 Cib
60
0.4 50
40
30
0.2
20
V(CE)sat @ IC/IB = 10 Cob
10
0 0
1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20
IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS)
Figure 3. Saturation and “ON” Voltages Figure 4. Capacitances

MOTOROLA
NPN Silicon BCP56T1

Epitaxial Transistor SERIES
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier
applications. The device is housed in the SOT-223 package, which is designed for MEDIUM POWER
medium power surface mount applications. NPN SILICON
• High Current: 1.0 Amp HIGH CURRENT
• The SOT-223 package can be soldered using wave or reflow. The formed leads TRANSISTOR
absorb thermal stress during soldering, eliminating the possibility of damage to SURFACE MOUNT
the die
• Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel 4
Use BCP56T3 to order the 13 inch/4000 unit reel COLLECTOR 2,4
• PNP Complement is BCP53T1 1
2
3
BASE
1
TO-261AA
EMITTER 3

Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current IC 1 Adc
DEVICE MARKING
BCP56T1 = BH
BCP56-10T1 = BK
BCP56-16T1 = BL
Thermal Resistance RθJA 83.3 °C/W
Junction-to-Ambient (surface mounted)
Maximum Temperature for Soldering Purposes TL 260 °C
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 1

BCP56T1 SERIES
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V(BR)CBO 100 — — Vdc
(IC = 100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CEO 80 — — Vdc
(IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — — 100 nAdc
(VCB = 30 Vdc, IE = 0)
Emitter-Base Cutoff Current IEBO — — 10 µAdc
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (2)
(IC = 5.0 mA, VCE = 2.0 V) All Part Types 25 — —
(IC = 150 mA, VCE = 2.0 V) BCP56T1 40 — 250
BCP56-10T1 63 — 160
BCP56-16T1 100 — 250
(IC = 500 mA, VCE = 2.0 V) All Types 25 — —
Collector-Emitter Saturation Voltage VCE(sat) — — 0.5 Vdc
Base-Emitter On Voltage VBE(on) — — 1.0 Vdc
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

BCP56T1 SERIES
1000
TJ = 125°C
TJ = 25°C
100
TJ = – 55°C
10
1 10 100 1000

f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
1000 80
60
TJ = 25°C
C, CAPACITANCE (pF) 40
Cibo
20
100
10
8.0
6.0 Cobo
10 4.0
1.0 10 100 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 2. Current-Gain — Bandwidth Product Figure 3. Capacitance

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 1.0
TJ = 25°C
TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
IC = 10 mA 50 100 mA 250 mA 500 mA

0.6 0.6
mA
0.4 0.4
0.2 0.2
0 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

MOTOROLA
NPN Silicon BCP68T1

This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER
applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON
medium power surface mount applications. HIGH CURRENT
• High Current: IC = 1.0 Amp TRANSISTOR
• The SOT-223 Package can be soldered using wave or reflow. SURFACE MOUNT
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to 4
the die
• Available in 12 mm Tape and Reel 1
COLLECTOR 2,4 2
Use BCP68T3 to order the 13 inch/4000 unit reel.
• The PNP Complement is BCP69T1 BASE CASE 318E-04, STYLE 1
1 TO-261AA
EMITTER 3

Collector Current IC 1 Adc
DEVICE MARKING
CA
REV 1

BCP68T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CES 25 — — Vdc
(IC = 100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc
(IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — — 10 µAdc
(VCB = 25 Vdc, IE = 0)
Emitter-Base Cutoff Current IEBO — — 10 µAdc
(VEB = 5.0 Vdc, IC = 0)
(IC = 5.0 mAdc, VCE = 10 Vdc) 50 — —
(IC = 500 mAdc, VCE = 1.0 Vdc) 85 — 375
(IC = 1.0 Adc, VCE = 1.0 Vdc) 60 — —
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)

f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
300
200
300
TJ = 125°C
200
= 25°C
100 100
= – 55°C
70 VCE = 10 V
TJ = 25°C
50 f = 30 MHz
VCE = 1.0 V
10 30
1.0 10 100 1000 10 100 200 1000
Figure 1. DC Current Gain Figure 2. Current-Gain-Bandwidth Product

BCP68T1
1.0 80
TJ = 25°C
TJ = 25°C
0.8 VBE(sat) @ IC/IB = 10 70
Cib, CAPACITANCE (pF)

V, VOLTAGE (VOLTS)
0.6 VBE(on) @ VCE = 1.0 V 60
0.4 50
0.2 40
0 30
1.0 10 100 1000 0 1.0 2.0 3.0 4.0 5.0
Figure 3. “On” Voltage Figure 4. Capacitance
25 – 0.8

TJ = 25°C
–1.2
20
–1.6
RθVB for VBE
15
– 2.0
10
– 2.4
5.0 – 2.8
0 5.0 10 15 20 1.0 10 100 1000
Figure 5. Capacitance Figure 6. Base-Emitter Temperature Coefficient
1.0
TJ = 25°C
VCE , COLLECTOR VOLTAGE (V)
0.8
0.6 = 1000 mA
0.4 I C = 10 mA = 50 mA = 100 mA
0.2
= 500 mA
0
0.01 0.1 1.0 10 100
Figure 7. Saturation Region

MOTOROLA
PNP Silicon BCP69T1

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for MEDIUM POWER
medium power surface mount applications. PNP SILICON
HIGH CURRENT
• High Current: IC = –1.0 Amp
TRANSISTOR
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die. 4

COLLECTOR 2,4 1
• NPN Complement is BCP68 BASE

1 CASE 318E-04, STYLE 1
TO-261AA
EMITTER 3

Collector-Base Voltage VCBO – 20 Vdc
Collector Current IC –1.0 Adc
DEVICE MARKING
CE
REV 2

BCP69T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CES – 25 — — Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO – 20 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — — Vdc
Collector-Base Cutoff Current (VCB = – 25 Vdc, IE = 0) ICBO — — –10 µAdc
Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) IEBO — — –10 µAdc
ON CHARACTERISTICS
(IC = – 5.0 mAdc, VCE = –10 Vdc) 50 — —
(IC = – 500 mAdc, VCE = –1.0 Vdc) 85 — 375
(IC = –1.0 Adc, VCE = –1.0 Vdc) 60 — —
Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) — — – 0.5 Vdc
Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) VBE(on) — — –1.0 Vdc
(IC = –10 mAdc, VCE = – 5.0 Vdc)
300
200
200
hFE , CURRENT GAIN
100
70 100
VCE = –10 V
50 VCE = –1.0 V 70 TJ = 25°C
TJ = 25°C f = 30 MHz
50
20 30
–10 –100 –1000 –10 –100 –1000
–1.0 160
TJ = 25°C
TJ = 25°C
– 0.8 V(BE)sat @ IC/IB = 10
120
V, VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
– 0.6
V(BE)on @ VCE = –1.0 V
80
– 0.4 Cib
40
– 0.2
V(CE)sat @ IC/IB = 10
Cob
0 0
–1.0 –10 –100 –1000 Cob – 5.0 –1.0 –1.5 – 2.0 – 2.5
IC, COLLECTOR CURRENT (mA) Cib –1.0 – 2.0 – 3.0 – 4.0 – 5.0
Figure 3. Saturation and “ON” Voltages
Figure 4. Capacitances

MOTOROLA
General Purpose Transistors BCW29LT1

PNP Silicon COLLECTOR
3
BCW30LT1
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS 2

Collector–Emitter Voltage VCEO –32 Vdc
SOT– 23 (TO – 236AB)
Collector–Base Voltage VCBO –32 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current – Continuous IC –100 mAdc
Total Device Dissipation FR-5 Board (1) PD 225 mW
TA = 25°C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate, (2) TA = 25°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO –32 — Vdc
(IC = –2.0 mAdc, IE = 0)
Collector–Emitter Breakdown Voltage V(BR)CES –32 — Vdc
(IC = –100 µAdc, VEB = 0)
Collector–Base Breakdown Voltage V(BR)CBO –32 — Vdc
(IC = –10 µAdc, IC = 0)
Emitter–Base Breakdown Voltage V(BR)EBO –5.0 — Vdc
(IE = –10 µAdc, IC = 0)
(VCB = –32 Vdc, IE = 0) — –100 nAdc
(VCB = –32 Vdc, IE = 0, TA = 100°C) — –10 µAdc
1. FR– 5 = 1.0 0.062 in.

0.75
2. Alumina = 0.4 0.024 in. 99.5% alumina.
0.3

BCW29LT1 BCW30LT1
ON CHARACTERISTICS
DC Current Gain hFE
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BCW29 120 260 —
BCW30 215 500 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.3
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.6 –0.75
Output Capacitance Cobo pF
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz) — 7.0
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — 10

BCW29LT1 BCW30LT1
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ
) 4KTRS ) In 2RS2 1ń2

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

BCW29LT1 BCW30LT1
400
TJ = 125°C
25°C
200
– 55°C
100
80
BCW29LT1
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
BCW29LT1 PULSE WIDTH = 300 µs
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW29LT1 BCW30LT1
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

TA = 25°C TA = 25°C
7.0 BCW29LT1 70
5.0 hfe ≈ 200 50
@ IC = –1.0 mA BCW29LT1
3.0 30
hfe ≈ 200
2.0 20 @ IC = 1.0 mA
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW29LT1 BCW30LT1
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 V
103
ICBO
AND Example:
ICEX @ VBE(off) = 3.0 V The BCW29LT1 is dissipating 2.0 watts peak under the following
100
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
0 0 TJ, JUNCTION TEMPERATURE (°C)

MOTOROLA
General Purpose Transistor BCW33LT1

NPN Silicon
COLLECTOR
3
1
BASE 3
1
2
2
EMITTER

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Total Device Dissipation FR– 5 Board(1) PD 225 mW
TA = 25°C
Alumina Substrate,(2) TA = 25°C
DEVICE MARKING
BCW33LT1 = D3

OFF CHARACTERISTICS
(IC = 2.0 mAdc, IB = 0)
(IC = 10 mAdc, IB = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 32 Vdc, IE = 0) — 100 nAdc
(VCB = 32 Vdc, IE = 0, TA = 100°C) — 10 µAdc
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BCW33LT1
ON CHARACTERISTICS
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 420 800
(IC = 10 mAdc, IB = 0.5 mAdc) — 0.25
Base – Emitter On Voltage VBE(on) Vdc
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 0.70

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure NF — 10 dB
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns
*Total shunt capacitance of test jig and connectors

BCW33LT1
(VCE = 5.0 Vdc, TA = 25°C)
20 100
IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
Noise Figure is defined as:
20 k
10 k NF + 20 log10 en2 ) 4KTRS ) In 2RS2 1ń2
5k 4KTRS
1.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
2k 2.0 dB In = Noise Current of the Transistor referred to the input. (Figure 4)
1k 3.0 dB K = Boltzman’s Constant (1.38 x 10–23 j/°K)
500 T = Temperature of the Source Resistance (°K)
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

BCW33LT1

1.0 100
BCW33LT1 TA = 25°C
IB = 500 µA
TJ = 25°C PULSE WIDTH = 300 µs

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
*APPLIES for IC/IB ≤ hFE/2

TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW33LT1
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
td @ VBE(off) = 0.5 Vdc 50
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

BCW33LT1
VCC = 30 Vdc
IC, COLLECTOR CURRENT (nA) 103
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
102 ICEO Figure 16 was calculated for various duty cycles.
Example:
ICBO The MPS3904 is dissipating 2.0 watts peak under the following
100
AND conditions:
ICEX @ VBE(off) = 3.0 Vdc t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
r(t) is 0.22.
Figure 16A.

MOTOROLA
General Purpose Transistors BCW60ALT1

BCW60BLT1
NPN Silicon
COLLECTOR
3
BCW60DLT1
1
BASE
3
2
EMITTER 1
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
TA = 25°C
Thermal Resistance Junction to Ambient RqJA 556 °C/W
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

OFF CHARACTERISTICS
(IC = 2.0 mAdc, IE = 0)
(IE = 1.0 mAdc, IC = 0)
(VCE = 32 Vdc) — 20 nAdc
(VCE = 32 Vdc, TA = 150°C) — 20 µAdc
(VEB = 4.0 Vdc, IC = 0) — 20
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BCW60ALT1 BCW60BLT1 BCW60DLT1
ON CHARACTERISTICS
(IC = 10 µAdc, VCE = 5.0 Vdc) BCW60A 20 —
BCW60B 30 —
BCW60D 100 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BCW60A 120 220

BCW60B 175 310
BCW60D 380 630
(IC = 50 mAdc, VCE = 1.0 Vdc) BCW60A 60 —

BCW60B 70 —
BCW60D 100 —
AC Current Gain hfe —
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz) BCW60A 125 250
BCW60B 175 350
BCW60D 350 700
(IC = 50 mAdc, IB = 1.25 mAdc) — 0.55
(IC = 10 mAdc, IB = 0.25 mAdc) — 0.35
(IC = 50 mAdc, IB = 1.25 mAdc) 0.7 1.05
(IC = 50 mAdc, IB = 0.25 mAdc) 0.6 0.85
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.6 0.75

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 125 —
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz) — 4.5
Noise Figure NF dB
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — 6.0
Turn–On Time ton ns
(IC = 10 mAdc, IB1 = 1.0 mAdc) — 150
Turn–Off Time toff ns
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω) — 800
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

400
h FE, DC CURRENT GAIN TJ = 125°C
200 25°C
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TJ = 25°C TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
VCE = 10 Vdc VCE = 10 Vdc
10 f = 1.0 kHz 100 f = 1.0 kHz

hfe ≈ 200 @ IC = 1.0 mA
TA = 25°C TA = 25°C
7.0 70
5.0 50 hfe ≈ 200 @ IC = 1.0 mA
3.0 30
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
Figure 19A.
400
100 µs The safe operating area curves indicate IC–VCE limits of the
1.0 ms
10 µs
100 TC = 25°C 1.0 s applicable curve.
20 TJ = 150°C limitations will reduce the power that can be handled to values less
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA
General Purpose Transistors BCW61BLT1

PNP Silicon BCW61CLT1
COLLECTOR
3
BCW61DLT1
1
BASE
3
2
EMITTER 1
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
TA = 25°C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO –32 — Vdc
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage V(BR)EBO –5.0 — Vdc
(IE = –1.0 mAdc, IC = 0)
(VCE = –32 Vdc) — –20 nAdc
(VCE = –32 Vdc, TA = 150°C) — –20 µAdc
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BCW61BLT1 BCW61CLT1 BCW61DLT1
ON CHARACTERISTICS
(IC = –10 µAdc, VCE = –5.0 Vdc) BCW61B 30 —
BCW61C 40 —
BCW61D 100 —
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BCW61B 140 310

BCW61C 250 460
BCW61D 380 630
(IC = –50 mAdc, VCE = –1.0 Vdc) BCW61B 80 —

BCW61C 100 —
BCW61D 100 —
AC Current Gain hfe —
(VCE = –5.0 Vdc, IC = –2.0 mAdc, f = 1.0 kHz) BCW61B 175 350
BCW61C 250 500
BCW61D 350 700
(IC = –50 mAdc, IB = –1.25 mAdc) — –0.55
(IC = –10 mAdc, IB = –0.25 mAdc) — –0.25
(IC = –50 mAdc, IB = –1.25 mAdc) –0.68 –1.05
(IC = –10 mAdc, IB = –0.25 mAdc) –0.6 –0.85
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.6 –0.75

(VCE = –10 Vdc, IC = 0, f = 1.0 MHz) — 6.0
Noise Figure NF dB
(VCE = –5.0 Vdc, IC = –0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — 6.0
(IC = –10 mAdc, IB1 = –1.0 mAdc) — 150
(IB2 = –1.0 mAdc, VBB = –3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω) — 800

(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband


1.0 100
TA = 25°C TA = 25°C IB = 400 µA
BCW61 PULSE WIDTH = 300 µs
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 V
ICBO
AND Example:
ICEX @ VBE(off) = 3.0 V The MPS3905 is dissipating 2.0 watts peak under the following
100
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.

MOTOROLA
General Purpose Transistor BCW65ALT1

NPN Silicon
COLLECTOR
3
1
3
BASE
1
2 2
EMITTER
MAXIMUM RATINGS CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
BCW65ALT1 = EA

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, VEB = 0)
(IE = 10 mAdc, IC = 0)
(VCE = 32 Vdc, IE = 0) — — 20 nAdc
(VCE = 32 Vdc, IE = 0, TA = 150°C) — — 20 µAdc
(VEB = 4.0 Vdc, IC = 0)
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BCW65ALT1
ON CHARACTERISTICS
(IC = 100 µAdc, VCE = 10 Vdc) 35 — —
(IC = 10 mAdc, VCE = 1.0 Vdc) 75 — 220
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 — 250
(IC = 500 mAdc, VCE = 2.0 Vdc) 35 — —
(IC = 500 mAdc, IB = 50 mAdc) — 0.7 —
(IC = 100 mAdc, IB = 10 mAdc) — 0.3 —
(IC = 500 mAdc, IB = 50 mAdc) — — 2.0

Output Capacitance Cobo — — 12 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — — 80 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Turn–On Time ton — — 100 ns
(IB1 = IB2 = 15 mAdc)
Turn–Off Time toff — — 400 ns
(IC = 150 mAdc, RL = 150 Ω)

MOTOROLA
General Purpose Transistor BCW68GLT1

PNP Silicon
COLLECTOR
3
1
3
BASE
1
2
2
EMITTER

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
DEVICE MARKING
BCW68GLT1 = DH
TA = 25°C

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO –45 — — Vdc
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) V(BR)CES –60 — — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 — — Vdc
(VCE= –45 Vdc, IE = 0) — — –20 nAdc
(VCE= –45 Vdc, IB = 0, TA = 150°C) — — –10 µAdc
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO — — –20 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

BCW68GLT1
ON CHARACTERISTICS
(IC = –10 mAdc, VCE = –1.0 Vdc) 120 — 400
(IC = –100 mAdc, VCE = –1.0 Vdc) 160 — —
(IC = –300 mAdc, VCE = –1.0 Vdc) 60 — —
Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc) VCE(sat) — — –1.5 Vdc
Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) — — –2.0 Vdc
Current–Gain — Bandwidth Product fT 100 — — MHz
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
(VCB= –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — — 105 pF
(VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC= –0.2 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)

MOTOROLA
General Purpose Transistors BCW69LT1

PNP Silicon BCW70LT1
COLLECTOR
3
1 3
BASE
1
2 2
EMITTER
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
TA = 25°C

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V(BR)CEO –45 — Vdc
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) V(BR)CES –50 — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 — Vdc
(VCB = –20 Vdc, IE = 0) — –100 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.


BCW69LT1 BCW70LT1
ON CHARACTERISTICS
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BCW69 120 260
BCW70 215 500
Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) VCE(sat) — –0.3 Vdc
Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) –0.6 –0.75 Vdc
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure NF — 10 dB
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

BCW69LT1 BCW70LT1
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

BCW69LT1 BCW70LT1

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW69LT1 BCW70LT1
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 16
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

BCW69LT1 BCW70LT1
VCC = 30 V
ICBO
AND Example:
ICEX @ VBE(off) = 3.0 V Dissipating 2.0 watts peak under the following conditions:
100
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
10–1 r(t) is 0.22.
The peak rise in junction temperature is therefore
10–2 ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
0 0 For more information, see AN–569.

MOTOROLA
General Purpose Transistor BCW72LT1

NPN Silicon
COLLECTOR
3
1
3
BASE
1
2
2
EMITTER
MAXIMUM RATINGS CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
BCW72LT1 = K2

OFF CHARACTERISTICS
(IC = 2.0 mAdc, VEB = 0)
(IC = 2.0 mAdc, VEB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 20 Vdc, IE = 0) — — 100 nAdc
(VCB = 20 Vdc, IE = 0, TA = 100°C) — — 10 mAdc
1. FR– 5 = 1.0 0.062 in.
0.75
0.3

BCW72LT1
ON CHARACTERISTICS
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 200 — 450
(IC = 10 mAdc, IB = 0.5 mAdc) — — 0.25
(IC = 50 mAdc, IB = 2.5 mAdc) — 0.21 —
(IC = 50 mAdc, IB = 2.5 mAdc) — 0.85 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.6 — 0.75

Output Capacitance Cobo — — 4.0 pF
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Input Capacitance Cibo — 9.0 — pF
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA
10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

BCW72LT1
(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M

100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

BCW72LT1
400
200 25°C
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TJ = 25°C TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW72LT1
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

hfe ≈ 200 @ IC = 1.0 mA
TA = 25°C TA = 25°C
7.0 70
5.0 50 hfe ≈ 200 @ IC = 1.0 mA
3.0 30
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

BCW72LT1
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA
PNP
COLLECTOR 3
General Purpose 1
BCX17LT1
Transistors BASE
BCX18LT1
2 EMITTER
NPN
COLLECTOR 3 BCX19LT1
1 BCX20LT1
BASE
for PNP transistors
2 EMITTER
1
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Value
BCX17LT1 BCX18LT1
Rating Symbol BCX19LT1 BCX20LT1 Unit
Collector–Emitter Voltage VCEO 45 25 Vdc
Collector–Base Voltage VCBO 50 30 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
TA = 25°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.

PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) BCX17, 19 45 — —
BCX18, 20 25 — —
Collector–Emitter Breakdown Voltage V(BR)CES Vdc
(IC = 10 µAdc, IC = 0) BCX17, 19 50 — —
BCX18, 20 30 — —
(VCB = 20 Vdc, IE = 0) — — 100 nAdc
(VCB = 20 Vdc, IE = 0, TA = 150°C) — — 5.0 µAdc
Emitter Cutoff Current IEBO — — 10 µAdc
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 — 600
(IC = 300 mAdc, VCE = 1.0 Vdc) 70 — —
(IC = 500 mAdc, VCE = 1.0 Vdc) 40 — —
Collector–Emitter Saturation Voltage VCE(sat) — — 0.62 Vdc

MOTOROLA
General Purpose Transistors BCX70GLT1

NPN Silicon BCX70JLT1
BCX70KLT1
COLLECTOR
3
1
BASE
2
3
EMITTER
1
2
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK

OFF CHARACTERISTICS
(IC = 2.0 mAdc, IE= 0)
(IE = 1.0 mAdc, IC = 0)
(VCE = 32 Vdc) — 20 nAdc
(VCE = 32 Vdc, TA = 150°C) — 20 mAdc
(VEB = 4.0 Vdc, IC = 0)
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BCX70GLT1 BCX70JLT1 BCX70KLT1
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 5.0 Vdc) BCX70G — —
BCX70J 40 —
BCX70K 100 —
(IC = 2.0 mAdc, VCE = 5.0 Vdc) BCX70G 120 220

BCX70J 250 460
BCX70K 380 630
(IC = 50 mAdc, VCE = 1.0 Vdc) BCX70G 60 —

BCX70J 90 —
BCX70K 100 —

(IC = 50 mAdc, IB = 1.25 mAdc) — 0.55
(IC = 10 mAdc, IB = 0.25 mAdc) — 0.35
(IC = 50 mAdc, IB = 1.25 mAdc) 0.7 1.05
(IC = 50 mAdc, IB = 0.25 mAdc) 0.6 0.85
Base – Emitter On Voltage VBE(on) 0.55 0.75 Vdc

Current–Gain — Bandwidth Product fT 125 — MHz
(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Small – Signal Current Gain hfe —
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) BCX70G 125 250
BCX70J 250 500
BCX70K 350 700
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Turn–On Time ton — 150 ns
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Turn–Off Time toff — 800 ns
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990Ω)
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

400
200 25°C
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TJ = 25°C TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

hfe ≈ 200 @ IC = 1.0 mA
TA = 25°C TA = 25°C
7.0 70
5.0 50 hfe ≈ 200 @ IC = 1.0 mA
3.0 30
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA
One Watt Amplifier Transistor

NPN Silicon BDB01C
COLLECTOR
3
2
BASE
1
2
3
1
EMITTER
TO–92 (TO–226AE)
MAXIMUM RATINGS
Collector – Base Voltage VCES 80 Vdc
Total Device Dissipation PD 1.0 Watt
@ TA = 25°C 8.0 mW/°C
Derate above 25°C
@ TC = 25°C 20 mW/°C
Derate above 25°C
Operating and Storage Junction TJ, Tstg – 55 to °C
Temperature Range +150

OFF CHARACTERISTICS
Collector – Emitter Voltage V(BR)CEO Vdc
(IC = 10 mA, IB = 0) 80 —
Collector Cutoff Current ICBO mAdc
(VCB = 80 V, IE = 0) — 0.01
(IC = 0, VEB = 5.0 V) — 100
REV 1

BDB01C
ON CHARACTERISTICS
(IC = 100 mA, VCE = 1.0 V) 40 400
(IC = 500 mA, VCE = 2.0 V) 25 —
(IC = 1000 mA, IB = 100 mA)
Collector – Emitter On Voltage(1) VBE(on) — 1.2 Vdc
(IC = 1000 mA, VCE = 1.0 V)
Current Gain Bandwidth Product fT 50 — MHz
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
Output Capacitance Cob — 30 pF
(VCB = 10 V, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.
400
TJ = 125°C VCE = 1.0 V

200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 mA 0.6 VBE(on) @ VCE = 1.0 V
0.4 0.4
0.2 0.2
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Figure 2. Collector Saturation Region Figure 3. On Voltages

BDB01C
–0.8 80
θ VB, TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C
60
–1.2
40 Cibo
C, CAPACITANCE (pF)
–1.6
20
θVB for VBE
–2.0
10
8.0
–2.4
6.0
Cobo
–2.8 4.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 4. Base–Emitter Temperature Coefficient Figure 5. Capacitance

300
VCE = 2.0 V
200 TJ = 25°C DUTY CYCLE ≤ 10%

2k
1.0 ms
1k
100 µs
500
100 TC = 25°C 1.0 s
200 TA = 25°C
70 100 dc dc
CURRENT LIMIT
50 50 THERMAL LIMIT
SECOND BREAKDOWN
20 BDB01C
LIMIT
30 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 5.0 10 20 45 60 80 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Current–Gain — Bandwidth Product Figure 7. Active Region–Safe Operating Area

MOTOROLA
One Watt Amplifier Transistors

PNP Silicon BDB02C
COLLECTOR
3
2
BASE
1 1
EMITTER 2
3
MAXIMUM RATINGS
Collector – Emitter Voltage VCEO –80 Vdc TO–92 (TO–226AE)
Collector – Base Voltage VCES –80 Vdc

@ TA = 25°C 8.0 mW/°C
Derate above 25°C
@ TC = 25°C 20 mW/°C
Derate above 25°C
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Voltage V(BR)CEO Vdc
(IC = –10 mA, IB = 0) –80 —
(VCB = –80 V, IE = 0) — –0.1
Emitter Cutoff Current (IC = 0, VEB = –5.0 V) IEBO — –100 nAdc
ON CHARACTERISTICS
(IC = –100 mA, VCE = –1.0 V) 40 400
(IC = –500 mA, VCE = –2.0 V) 25 —
Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA) VCE(sat) — –0.7 Vdc
Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.0 V) VBE(on) — –1.2 Vdc
Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz) fT 50 — MHz
Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz) Cob — 30 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

REV 1

BDB02C
400
TJ = 125°C
VCE = –1.0 V
200
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

–1.0 –1.0
TJ = 25°C TJ = 25°C
–0.8 –0.8
V, VOLTAGE (VOLTS)
–0.6 –50 –0.6
IC = –10 mA –100 mA –250 mA –500 mA VBE(on) @ VCE = –1.0 V
mA
–0.4 –0.4
–0.2 –0.2
0 0
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 2. Collector Saturation Region Figure 3. On Voltages
–0.8 100
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
70 TJ = 25°C
Cibo
–1.2
50
C, CAPACITANCE (pF)
–1.6 30
20
–2.0 θVB for VBE
10 Cobo
–2.4
7.0
–2.8 5.0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

BDB02C
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz

300
VCE = –2.0 V

–2 k
1.0 ms
–1 k
100 µs
–500
100 10 s
TC = 25°C
–200 TA = 25°C
70 dc dc
–100
CURRENT LIMIT
50 –50 THERMAL LIMIT
–20
BDB02C
30 –10
–2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –1.0 –2.0 –5.0 –10 –20 –45 –60 –80 –100
Figure 6. Current–Gain — Bandwidth Product Figure 7. Active Region — Safe Operating Area

MOTOROLA

NPN Silicon BDC01D
COLLECTOR
2
3
BASE
1
2
3
1
EMITTER
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating Symbol BDC01D Unit
Total Device Dissipation @ TA = 25°C PD 1.0 Watts
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Voltage V(BR)CEO 100 — Vdc
(IC = 10 mA, IB = 0)
Collector Cutoff Current ICBO — 0.1 mAdc
(VCB = 100 V, IE = 0)
(IC = 0, VEB = 5.0 V)

BDC01D
ON CHARACTERISTICS
(IC = 100 mA, VCE = 1.0 V) 40 400
(IC = 500 mA, VCE = 2.0 V) 25 —
(IC = 1000 mA, IB = 100 mA)
Collector – Emitter On Voltage(1) VBE(on) — 1.2 Vdc
(IC = 1000 mA, VCE = 1.0 V)
Current Gain Bandwidth Product fT 50 — MHz
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
(VCB = 10 V, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%.
400
TJ = 125°C VCE = 1.0 V

200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 mA 0.6 VBE(on) @ VCE = 1.0 V
0.4 0.4
0.2 0.2
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Figure 2. Collector Saturation Region Figure 3. “On” Voltages

BDC01D
–0.8 80
θ VB, TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C
60
–1.2
40 Cibo
C, CAPACITANCE (pF)
–1.6
20
θVB for VBE
–2.0
10
8.0
–2.4
6.0
Cobo
–2.8 4.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

300
VCE = 2.0 V

2k
1.0 ms
1k
100 µs
500
100 TC = 25°C 1.0 s
200 TA = 25°C
70 100 dc dc
CURRENT LIMIT
50 50 THERMAL LIMIT
20 MPSW05
30 10 MPSW06
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 5.0 10 20 60 80 100

MOTOROLA
RF Transistor
NPN Silicon
COLLECTOR
1
BF199
3
BASE
2
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 25 — —
(IC = 100 mAdc, IE = 0) 40 — —
(IE = 10 mAdc, IC = 0) 4.0 — —
(VCB = 20 Vdc, IE = 0) — — 100

BF199
ON CHARACTERISTICS
(IC = 7.0 mAdc, VCE = 10 Vdc) 40 85 —
Base–Emitter On Voltage VBE(on) mVdc
(IC = 7.0 mAdc, VCE = 10 Vdc) — 770 900
Current Gain — Bandwidth Product fT MHz
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) 400 750 —
Common Emitter Feedback Capacitance Cre pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 0.25 0.35
Noise Figure Nf dB
(IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 35 MHz) — 2.5 —

BF199

1000 10
700 VCE = 10 V BF199
TA = 25°C
500
300
C, CAPACITANCE (pF)
200 2
Cib
100 1
0.7 Cob
0.5
0.4
0.3
20 0.2 Cre @ IE = 0
10
0.2 0.3 0.5 0.7 1 3 5 10 20 100 0.1 0.2 0.5 1 3 5 10 20
100
VCE = 10 V VCE = 10 V
TA = 25°C 50
100 MHz
200 20
100 mmhos 10
BF199
70
50 5 45 MHz
30
10.7 MHz
20 2
b11e 470 kHz < 0.2 mmhos
10 1
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 2 3 4 5 6 7 8
Figure 3. DC Current Gain Figure 4. b11e
–100 2000
VCE = 10 V 100 MHz
–50 1000 100 MHz
VCE = 10 V
45 MHz 500
–20
mmhos
µmhos
45 MHz
–10 10.7 MHz 200
–5 100
10.7 MHz
50
–2
b21e, at 470 kHz < 0.5 mmhos 470 kHz
–1 20
2 3 4 5 6 7 8 1 2 3 4 5 6 7
Figure 5. b21e Figure 6. b22e (boe)

BF199
10 200
VCE = 10 V 100 MHz
VCE = 10 V
5 100
45 MHz
10.7 MHz f = 0.47 to 45 MHz
50
2 470 kHz
mmhos
mmhos
1 20
0.5 10
5
0.2
0.1 2
2 3 4 5 6 7 8 1 2 3 4 5 6 7
Figure 7. g11e (gie) Figure 8. g21e (Yfe)
200
VCE = 10 V 100 MHz
100
50 45 MHz
10.7 MHz
µmhos
20 470 kHz
10
2
1 2 3 4 5 6 7
Figure 9. g22e (goe)

MOTOROLA
RF Transistor
NPN Silicon
COLLECTOR
1
BF224
3
BASE
2
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 30 — —
(IC = 100 mAdc, IE = 0) 45 — —
(IE = 100 mAdc, IC = 0) 4.0 — —
(VCB = 20 Vdc, IE = 0) — — 100
(VEB = 3.0 Vdc, IC = 0) — — 100

BF224
ON CHARACTERISTICS
(IC = 7.0 mAdc, VCE = 10 Vdc) 30 — —
Base–Emitter On Voltage VBE(on) mVdc
(IC = 7.0 mAdc, VCE = 10 Vdc) — 0.77 0.9
(IC = 10 mAdc, IB = 1.0 mAdc) — — 0.15
(IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz) 300 600 —
(IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz) — 850 —
(VCE = 10 Vdc, IE = 0, f = 1.0 MHz) — 0.28 —
Noise Figure Nf dB

BF224

1000 10
700 VCE = 10 V BF224
TA = 25°C
500
300
C, CAPACITANCE (pF)
200 2
Cib
100 1
0.7 Cob
0.5
0.4
0.3
20 0.2 Cre @ IE = 0
10
0.2 0.3 0.5 0.7 1 3 5 10 20 100 0.1 0.2 0.5 1 3 5 10 20
100
VCE = 10 V VCE = 10 V
TA = 25°C 50
100 MHz
200 20
100 mmhos 10
BF224
70
50 5 45 MHz
30
10.7 MHz
20 2
10 1
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 2 3 4 5 6 7 8
–100 2000
VCE = 10 V 100 MHz
–50 1000 100 MHz
VCE = 10 V
45 MHz 500
–20
mmhos
µmhos
45 MHz
–10 10.7 MHz 200
–5 100
10.7 MHz
50
–2
–1 20
2 3 4 5 6 7 8 1 2 3 4 5 6 7

BF224
10 200
VCE = 10 V 100 MHz
VCE = 10 V
5 100
45 MHz
10.7 MHz f = 0.47 to 45 MHz
50
2 470 kHz
mmhos
mmhos
1 20
0.5 10
5
0.2
0.1 2
2 3 4 5 6 7 8 1 2 3 4 5 6 7
200
VCE = 10 V 100 MHz
100
50 45 MHz
10.7 MHz
µmhos
20 470 kHz
10
2
1 2 3 4 5 6 7

MOTOROLA
AM/FM Transistor
NPN Silicon BF240
COLLECTOR
1
3
BASE
1
2
3
2
EMITTER
MAXIMUM RATINGS TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 40 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — — 100 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 65 — 220 —
Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) VBE(on) 0.65 0.7 0.74 Vdc
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Common Emitter Feedback Capacitance Cre — 0.28 0.34 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
REV 1

BF240
1000 10
700 VCE = 10 V BF240
TA = 25°C
500
300
C, CAPACITANCE (pF)
200 2
Cib
100 1
0.7 Cob
0.5
0.4
0.3
20 0.2 Cre @ IE = 0
10
0.2 0.3 0.5 0.7 1 3 5 10 20 100 0.1 0.2 0.5 1 3 5 10 20
100
VCE = 10 V VCE = 10 V
TA = 25°C 50
100 MHz
200 mmhos 20
100 10
BF240
70
50 5 45 MHz
30
10.7 MHz
20 2
10 1
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 2 3 4 5 6 7 8
–100 2000
VCE = 10 V 100 MHz
–50 1000 100 MHz
VCE = 10 V
45 MHz 500
–20
mmhos
µmhos
45 MHz
–10 10.7 MHz 200
–5 100
10.7 MHz
50
–2
–1 20
2 3 4 5 6 7 8 1 2 3 4 5 6 7

BF240
10 200
VCE = 10 V 100 MHz
VCE = 10 V
5 100
45 MHz
10.7 MHz f = 0.47 to 45 MHz
50
2 470 kHz
mmhos
mmhos
1 20
0.5 10
5
0.2
0.1 2
2 3 4 5 6 7 8 1 2 3 4 5 6 7
200
VCE = 10 V 100 MHz
100
50 45 MHz
10.7 MHz
µmhos
20 470 kHz
10
2
1 2 3 4 5 6 7

MOTOROLA
High Voltage Transistor

NPN Silicon
COLLECTOR
3
BF393
2
BASE
1
EMITTER
1
2
3

Rating Symbol Value Unit TO–92 (TO–226AA)
Temperature Range
Thermal Resistance, Junction to RqJA 200 °C/W
Ambient

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB =0) 300 —
(IC = 100 mAdc, IE = 0) 300 —
(IE = 100 mAdc, IC = 0) 6.0 —
(VCB = 200 Vdc, IE = 0) — 0.1
Emitter Cutoff Current IEBO µAdc
(VEB = 6.0 Vdc, IC = 0) — 0.1
(Replaces BF392/D)

BF393
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 —
(IC = 20 mAdc, IB = 2.0 mAdc) — 2.0
(IC = 20 mAdc, IB = 2.0 mAdc) — 2.0

(VCB = 60 Vdc, IE = 0, f = 1.0 MHz) — 2.0

BF393
200
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

100 100
50 70
C, CAPACITANCE (pF)
Ceb 50
20
TJ = 25°C
10 VCE = 20 V
30 f = 20 MHz
5.0
20
2.0 Ccb
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 2. Capacitances Figure 3. Current–Gain — Bandwidth Product
1.4 500
TJ = 25°C 100 µs 10 µs
1.2 200 TA = 25°C
1.0 ms
1.0 100 TC = 25°C
V, VOLTAGE (VOLTS)
50
0.8 100 ms
20
0.6 10 CURRENT LIMIT
THERMAL LIMIT
5.0 (PULSE CURVES @ TC = 25°C)
0.4
2.0
0.2 VCE(sat) @ IC/IB = 10 CURVES APPLY
1.0 MPSA43
BELOW RATED VCEO
MPSA42
0 0.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Figure 4. “On” Voltages Figure 5. Maximum Forward Bias

Safe Operating Area

MOTOROLA
High Voltage Transistors

NPN Silicon BF420
BF422
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating Symbol BF420 BF422 Unit 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) BF420 300 —
BF422 250 —
(IC = 100 mAdc, IE = 0) BF420 300 —
BF422 250 —
(IE = 100 mAdc, IC = 0) BF420 5.0 —
BF422 5.0 —
(VCB = 200 Vdc, IE = 0) BF420 — 0.01
BF422 — —
(VEB = 5.0 Vdc, IC = 0) BF420 — 100
BF422 — —

BF420 BF422
ON CHARACTERISTICS
(IC = 25 mAdc, VCE = 20 Vdc) BF420 50 —
BF422 50 —
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.5
(IC = 20 mAdc, IB = 2.0 mAdc) — 2.0

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz) — 1.6

BF420 BF422
200
VCE = 10 Vdc
hFE, DC CURRENT GAIN TJ = +125°C

100
25°C
50
–55°C
30
20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

100 100
50 70
C, CAPACITANCE (pF)
Ceb 50
20
TJ = 25°C
10 VCE = 20 V
30 f = 20 MHz
5.0
20
2.0 Ccb
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.4 500
TJ = 25°C 100 µs 10 µs
1.2 200 TA = 25°C
1.0 ms
1.0 100 TC = 25°C
V, VOLTAGE (VOLTS)
50
0.8 100 ms
20
THERMAL LIMIT
0.4
2.0
1.0 MPSA43
BELOW RATED VCEO
MPSA42
0 0.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100 200 500

Safe Operating Area

MOTOROLA
High Voltage Transistors BF421

PNP Silicon
BF423
COLLECTOR
2
3
BASE
1
EMITTER 1
2
MAXIMUM RATINGS 3
Rating Symbol BF421 BF423 Unit

Collector – Emitter Voltage VCEO –300 –250 Vdc TO–92 (TO–226AA)

@ TA = 25°C 5.0 mW/°C
Derate above 25°C
Total Device Dissipation PD 1.5 Watts
@ TC = 25°C 12 mW/°C
Derate above 25°C
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) V(BR)CEO Vdc
(IC = –1.0 mAdc, IB = 0) BF421 –300 —
BF423 –250 —
(IC = –100 mAdc, IE = 0) BF421 –300 —
BF423 –250 —
(IE = –100 mAdc, IC = 0) BF421 –5.0 —
BF423 –5.0 —
(VCB = –200 Vdc, IE = 0) BF421 — –0.01
BF423 — —
(VEB = –5.0 Vdc, IC = 0) BF421 — –100
BF423 — —

BF421 BF423
ON CHARACTERISTICS
(IC = –25 mA, VCE = –20 Vdc) BF421 50 —
BF423 50 —
Collector – Emitter Saturation Voltage VCE(sat) — –0.5 Vdc
(IC = –20 mAdc, IB = –2.0 mAdc)
Base – Emitter Saturation Voltage VBE(sat) — –2.0 Vdc
(IC = –20 mA, IB = –2.0 mA)

Common Emitter Feedback Capacitance Cre — 2.8 pF
(VCB = –30 Vdc, IE = 0, f = 1.0 MHz)

BF421 BF423
150
TJ = +125°C
VCE = –10 Vdc
100
+25°C
70
50 –55°C
30
20
15
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

100 100
80 TJ = 25°C
50 VCE = –20 Vdc
Cib 60
C, CAPACITANCE (pF)
20
40
10 30
5.0
20
2.0
Ccb
1.0 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0 –500
100 µs
1.0 ms
–0.8 –200 1.0 s

VBE @ VCE = –10 V
V, VOLTAGE (VOLTS)
–100
–0.6
BF423
–50
1.5 WATT THERMAL
–0.4 LIMITATION @ TC = 25°C BF421
625 mW THERMAL
–20 LIMITATION @ TA = 25°C
–0.2
VCE(sat) @ IC/IB = 10 mA –10 BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
0 –5.0
–1.0 –2.0 –5.0 –10 –20 –50 –100 –3.0 –5.0 –10 –20 –30 –50 –100 –200 –300
Figure 4. “On” Voltages Figure 5. Active Region — Safe Operating Area

MOTOROLA

PNP Silicon BF493S
COLLECTOR
3
2
BASE
1 1
EMITTER 2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Total Device Dissipation @ TA = 25°C PD 625 Watts
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) V(BR)CEO –350 — Vdc
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO –350 — Vdc
(IC = –100 mAdc, IE = 0)
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current ICES — –10 nAdc
(VCE = –250 Vdc)
Emitter Cutoff Current IEBO — 0.1 mAdc
(VEB = –6.0 Vdc, IC = 0)
(VCB = –250 Vdc, IE = 0, TA = 25°C) — –0.005
(VCB = –250 Vdc, IE = 0, TA = 100°C) — –1.0

BF493S
ON CHARACTERISTICS
(IC = –1.0 mAdc, VCE = –10 Vdc) 25 —
(IC = –10 mAdc, VCE = –10 Vdc) 40 —
(IC = –20 mAdc, IB = –2.0 mAdc)
Base – Emitter On Voltage VBE(sat) — –2.0 Vdc
(IC = –20 mA, IB = –2.0 mA)
Common–Emitter Feedback Capacitance Cre — 1.6 pF
(VCB = –100 Vdc, IE = 0, f = 1.0 MHz)

BF493S
150
TJ = +125°C
VCE = –10 Vdc
100
hFE, DC CURRENT GAIN +25°C
70
50 –55°C
30
20
15
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

100 100
80 TJ = 25°C
50 VCE = –20 Vdc
Cib 60
C, CAPACITANCE (pF)
20
40
10 30
5.0
20
2.0
Ccb
1.0 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0 –500
100 µs
1.0 ms
–0.8 –200 1.0 s

VBE @ VCE = –10 V
V, VOLTAGE (VOLTS)
–100
–0.6
MPSA93
–50
1.5 WATT THERMAL
–0.4 LIMITATION @ TC = 25°C MPSA92
625 mW THERMAL
–0.2
SECOND BREAKDOWN
0 –5.0
–1.0 –2.0 –5.0 –10 –20 –50 –100 –3.0 –5.0 –10 –20 –30 –50 –100 –200 –300

MOTOROLA
NPN Silicon Transistor BF720T1

COLLECTOR 2,4
BASE NPN SILICON

1 TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS 4
Collector-Emitter Voltage VCEO 300 Vdc 1
2
3
Collector-Emitter Voltage VCER 300 Vdc CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 100 mAdc
Total Power Dissipation up to TA = 25°C PD 1.5 Watts
Storage Temperature Range Tstg – 65 to +150 °C
DEVICE MARKING
DC
from Junction-to-Ambient(1)

Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO 300 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO 300 — Vdc
(IC = 100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CER 300 — Vdc
(IC = 100 µAdc, RBE = 2.7 kΩ)
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 10 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — 10 nAdc
(VCB = 200 Vdc, IE = 0)
Collector–Emitter Cutoff Current ICER
(VCE = 250 Vdc, RBE = 2.7 kΩ) — 50 nAdc
(VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) — 10 µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
REV 2

BF720T1
ON CHARACTERISTICS
DC Current Gain hFE 50 — —
Collector-Emitter Saturation Voltage VCE(sat) — 0.6 Vdc
Feedback Capacitance Cre — 1.6 pF
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz)

MOTOROLA
PNP Silicon Transistor BF721T1

COLLECTOR 2,4
PNP SILICON
BASE
TRANSISTOR
1
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS 4
1
Collector-Emitter Voltage VCEO – 300 Vdc 2
3
Collector-Base Voltage VCBO –300 Vdc
Collector-Emitter Voltage VCER – 300 Vdc CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
Collector Current IC –100 mAdc
Total Power Dissipation up to PD 1.5 Watts
TA = 25°C(1)
DEVICE MARKING
DF
Thermal Resistance from Junction to RθJA 83.3 °C/W
Ambient(1)

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO – 300 — Vdc
(IC = –1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO –300 — Vdc
(IC = –100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CER –300 — Vdc
(IC = –100 µAdc, RBE = 2.7 kΩ)
Emitter-Base Breakdown Voltage V(BR)EBO – 5.0 — Vdc
(IE = –10 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — –10 nAdc
(VCB = – 200 Vdc, IE = 0)
Collector–Emitter Cutoff Current ICER
(VCE = – 250 Vdc, RBE = 2.7 kΩ) — –50 nAdc
(VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) — –10 µAdc
REV 3

BF721T1
ON CHARACTERISTICS
(VCE = –25 mAdc, VCE = –20 Vdc)
Collector-Emitter Saturation Voltage VCE(sat) — – 0.8 Vdc

(IC = – 30 mAdc, IB = – 5.0 mAdc)
Current-Gain — Bandwidth Product fT 60 — MHz
(VCE = – 10 Vdc, IC = –10 mAdc, f = 35 MHz)
(VCE = – 30 Vdc, IC = 0, f = 1.0 MHz)

MOTOROLA

NPN Silicon
BF844
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
Collector – Emitter Voltage VCEO 400 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage V(BR)CES 450 — Vdc
(IC = 100 µAdc, VBE = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO — 0.1 µAdc
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current ICES — 500 nAdc
(VCE = 400 Vdc, VBE = 0)
(VEB = 4.0 Vdc, IC = 0)

BF844
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 40 —
(IC = 10 mAdc, VCE = 10 Vdc) 50 200
(IC = 50 mAdc, VCE = 10 Vdc) 45 —
(IC = 100 mAdc, VCE = 10 Vdc) 20 —
(IC = 1.0 mAdc, IB = 0.1 mAdc) — 0.4
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.5
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.75
High Frequency Current Gain |hfe| 1.0 —
Collector–Base Capacitance Cob — 6.0 pF

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Cib — 110 pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time ton — 0.6 µs

(VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc)
Turn–Off Time toff — 10 µs

(VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc)

BF844

160 0.5
140 TA = 125°C
0.4 IC = 1.0 mA IC = 10 mA IC = 50 mA
120 VCE = 10 V
100 0.3
TA = 25°C
25°C
80 0.2
60
0.1
40
–55°C
20 0
1.0 2.0 5.0 10 20 50 100 200 300 10 30 100 300 1.0 k 3.0 k 10 k 50 k
1.0 1000
TA = 25°C 1.0 ms 100 µs

0.8 VBE(sat) @ IC/IB = 10 300
200 TC = 25°C
1.0 s
V, VOLTAGE (VOLTS)
TA = 25°C
100
0.6 VBE(on) @ VCE = 10 V
20
0.4
10 CURRENT LIMIT
THERMAL LIMIT
0.2 VCE(sat) @ IC/IB = 10 SECOND BREAKDOWN LIMIT
2.0 VALID FOR DUTY CYCLE ≤ 10%
0 1.0
0.1 0.3 1.0 3.0 10 30 100 300 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 3. On Voltages Figure 4. Active Region Safe Operating Area
100 10
Cib
50
C, CAPACITANCE (pF)
20
10 VCE = 10 V
Cob
f = 10 MHz
3.0 TA = 25°C
5.0
2.0
2.0 TA = 25°C 1.5

f = 1.0 MHz
1.0 1.0
0.3 0.5 1.0 3.0 10 30 100 300 0.1 0.2 0.3 1.0 3.0 10 30 100

BF844
10 Vin
+9.7 V
5.0
PW = 50 µs
DUTY CYCLE = 2.0%
2.0
t, TIME ( µs)
1.0 0
0.5 –4.0 V
VCC = 150 V
IC/IB = 10 VCC
0.2 TA = 25°C tr
RL
VBE(off) = 4.0 Vdc td
0.1 Vout
1.0 3.0 10 30 50 100
RB
IC, COLLECTOR CURRENT (mA) Vin
CS ≤ 4.0 pF*
Figure 7. Turn–On Switching Times and Test Circuit
10
Vin
5.0 +10.7 V
ts
2.0 PW = 50 µs
DUTY CYCLE = 2.0%
t, TIME ( µs)
1.0
0.5 tf
VCC = 150 V –11.4 V
IC/IB = 10 VCC
0.2 TA = 25°C
RL
0.1
1.0 3.0 10 30 50 100 Vout
IC, COLLECTOR CURRENT (mA) RB
Vin
CS ≤ 4.0 pF*
Figure 8. Turn–Off Switching Times and Test Circuit
* Total Shunt Capacitance or Test Jig and Connectors.

MOTOROLA
VHF Transistor
NPN Silicon
COLLECTOR
BF959
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
2
Collector – Emitter Voltage VCEO 20 Vdc 3

Emitter – Base Voltage VEBO 3.0 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 30 — — Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc
ON CHARACTERISTICS
(IC = 5.0 mAdc, VCE = 10 Vdc) 35 — —
(IC = 20 mAdc, VCE = 10 Vdc) 40 — —
Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VCE(sat) — — 1.0 Vdc
Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) VBE(sat) — — 1.0 Vdc

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) 700 — —
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) 600 — —
Common Emitter Feedback Capacitance Cre — 0.65 — pF
(VCB = 10 Vdc, Pf = 0, f = 10 MHz)
Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 Ω, f = 200 MHz) Nf — 3.0 — dB

BF959
1000 500
500
200
200
100
mV
100
50
50 40
40 30
30
20 20
10 10
1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 50
Figure 1. hFE at 10 V Figure 2. VCE(sat) at IC/IB = 10

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (GHz)
2.0 1.8
1.8 1.6
1.6 1.4
C, CAPACITANCE (pF)
1.4 1.2
Cib
1.2 1
1 0.8 Cob
0.8 10 V 0.6
2V 5V Cre
0.6 0.4
0.4 0.2
1 2 3 4 5 10 20 30 40 50 100 1 2 3 4 5 10 20 30 50 100
10 500
b22e
5 g11e 300
4
3 200 g22e
VCE = 10 V
2 VCE = 10 V
100
Y22e ( µs)
Y11e (ms)
1 b11e
50
0.5 40
0.4 30
0.3
0.2 20
0.1 10
1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 50
Figure 5. Input Impedance at 30 MHz Figure 6. Output Impedance at 30 MHz

MOTOROLA
SOT-223 Package BSP16T1

High Voltage Transistor Motorola Preferred Device
PNP Silicon
COLLECTOR 2,4 SOT–223 PACKAGE
PNP SILICON
BASE
HIGH VOLTAGE
1 TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS 1
2
Collector – Emitter Voltage VCEO –300 Vdc CASE 318E-04, STYLE 1

Collector – Base Voltage VCBO –350 Vdc TO-261AA

Base Current IB –500 mAdc
Total Device Dissipation, TA = 25°C (1) PD 1.5 Watts
DEVICE MARKING
BT2
Thermal Resistance, Junction to Ambient RqJA 83.3 °C/W

OFF CHARACTERISTICS
(IC = –50 mAdc, IB = 0, L = 25 mH) –300 —
(IC = –100 mAdc, IE = 0) –300 —
Collector–Emitter Cutoff Current ICES µAdc
(VCE = –250 Vdc, IB = 0) — –50
Collector–Base Cutoff Current ICBO µAdc
(VCB = –280 Vdc, IE = 0) — –1.0
Emitter–Base Cutoff Current IEBO µAdc
(VEB = –6.0 Vdc, IC = 0) — –20
REV 2

BSP16T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
ON CHARACTERISTICS
(VCE = – 10 Vdc, IC = –50 mAdc) 30 120
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC = – 50 mAdc, IB = – 5.0 mAdc) — – 2.0
Current Gain – Bandwidth Product fT MHz
(VCE = – 10 Vdc, IC = –10 mAdc, f = 30 MHz) 15 —
Collector–Base Capacitance Cobo pF
(VCB = – 10 Vdc, IE = 0, f = 1.0 MHz) — 15

MOTOROLA
NPN Silicon BSP19AT1

This family of NPN Silicon Epitaxial transistors is designed for use as a general
purpose amplifier and in switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount applications. SOT–223 PACKAGE
• High Voltage: V(BR)CEO of 250 and 350 Volts. NPN SILICON
• The SOT-223 package can be soldered using wave or reflow. HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
• Available in 12 mm Tape and Reel COLLECTOR 2,4 4
T1 Configuration – 7 inch/1000 unit reel
T3 Configuration – 13 inch/4000 unit reel 1
BASE 2
• PNP Complement is BSP16T1 1 3

EMITTER 3 TO-261AA

Collector-Emitter Voltage (Open Base) VCEO 350 Vdc
Collector-Base Voltage (Open Emitter) VCBO 400 Vdc
Emitter-Base Voltage (Open Collector) VEBO 5.0 Vdc
Collector Current (DC) IC 1000 mAdc
Storage Temperature Range Tstg – 65 to 150 °C
DEVICE MARKING
SP19A
Thermal Resistance from Junction-to-Ambient RθJA 156 °C/W
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 2

BSP19AT1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 350 —
Collector-Base Cutoff Current ICBO nAdc
(VCB = 400 Vdc, IE = 0) — 20
Emitter-Base Cutoff Current IEBO µAdc
(VEB = 5.0 Vdc, IC = 0) — 10
(IC = 20 mAdc, VCE = 10 Vdc) 40 —
Current-Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) 70 —
(IC = 50 mAdc, IB = 4.0 mAdc) — 0.5
Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 50 mAdc, IB = 4.0 mAdc) — 1.3
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%

MOTOROLA
NPN Small-Signal BSP52T1

Darlington Transistor Motorola Preferred Device
This NPN small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is MEDIUM POWER
housed in the SOT-223 package, which is designed for medium power surface mount NPN SILICON
applications. DARLINGTON
• The SOT-223 Package can be soldered using wave or reflow. The formed TRANSISTOR
leads absorb thermal stress during soldering, eliminating the possibility of SURFACE MOUNT
damage to the die
Use BSP52T1 to order the 7 inch/1000 unit reel 4
COLLECTOR 2,4
Use BSP52T3 to order the 13 inch/4000 unit reel
• PNP Complement is BSP62T1 BASE 1
1 2
3

EMITTER 3 TO-261AA

Collector-Emitter Voltage VCES 80 Vdc
DEVICE MARKING
AS3
Thermal Resistance – Junction-to-Ambient (surface mounted) RθJA 156 °C/W
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1

BSP52T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0) 90 —
Emitter-Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 µAdc, IC = 0) 5.0 —
Collector-Emitter Cutoff Current ICES µAdc
(VCE = 80 Vdc, VBE = 0) — 10
(VEB = 4.0 Vdc, IC = 0) — 10
(IC = 150 mAdc, VCE = 10 Vdc) 1000 —
(IC = 500 mAdc, VCE = 10 Vdc) 2000 —
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.3
Base-Emitter On Voltage VBE(on) Vdc
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.9

MOTOROLA
PNP Small-Signal BSP62T1

This PNP small signal darlington transistor is designed for use in switching
applications, such as print hammer, relay, solenoid and lamp drivers. The device is MEDIUM POWER
housed in the SOT-223 package which is designed for medium power surface mount PNP SILICON
applications. DARLINGTON
TRANSISTOR
• The SOT-223 Package can be soldered using wave or reflow. The formed SURFACE MOUNT
damage to the die
Use BSP62T1 to order the 7 inch/1000 unit reel. 4
COLLECTOR 2,4
Use BSP62T3 to order the 13 inch/4000 unit reel.
• NPN Complement is BSP52T1 BASE 1
2
1 3

TO-261AA
EMITTER 3

DEVICE MARKING
BS3
1. Device mounted on a FR–4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 2

BSP62T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0) 90 —
Emitter-Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 µAdc, IC = 0) 5.0 —
Collector-Emitter Cutoff Current ICBO µAdc
(VCE = 80 Vdc, VBE = 0) — 10
(VEB = 4.0 Vdc, IC = 0) — 10
(IC = 150 mAdc, VCE = 10 Vdc) 1000 —
(IC = 500 mAdc, VCE = 10 Vdc) 2000 —
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.3
Base-Emitter On Voltage VBE(on) Vdc
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.9

BSP62T1
200
100 TA = 125°C
hFE, DC CURRENT GAIN (X1.0 K)
70
50
10 V
30 25°C
20 VCE = 2.0 V
5.0 V
10
7.0
5.0 –55°C
3.0
2.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300
10 2.0
|h FE |, HIGH FREQUENCY CURRENT GAIN
VCE = 5.0 V
TA = 25°C
4.0 f = 100 MHz 1.6 VBE(sat) @ IC/IB = 100
3.0 TA = 25°C
2.0 V, VOLTAGE (VOLTS)
1.2
1.0 VBE(on) @ VCE = 5.0 V
0.8 VCE(sat) @ IC/IB = 1000
0.4 IC/IB = 100
0.4
0.2
0.1 0
1.0 2.0 5.0 10 20 50 100 200 500 1K 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300
Figure 2. High Frequency Current Gain Figure 3. “On” Voltage

2.0
TA = 25°C
1.8
1.6
IC = 10 mA 50 mA 100 mA 175 mA 300 mA
1.4
1.2
1.0
0.8
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K
IB, BASE CURRENT (µA)

MOTOROLA
High Voltage Transistor BSS63LT1

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
Collector – Emitter Voltage VCER Vdc CASE 318 – 08, STYLE 6
RBE = 10 kΩ –110 SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
BSS63LT1 = T1

OFF CHARACTERISTICS
(IC = –100 µAdc) –100 — —
Collector – Emitter Breakdown Voltage V(BR)CER Vdc
(IC = –10 µAdc, IE = 0, RBE = 10 kΩ) –110 — —
(IE = –10 mAdc, IE = 0) –110 — —
(IE = –10 mAdc) –6.0 — —
(VCB = –90 Vdc, IE = 0) — — –100
Collector Cutoff Current ICER µAdc
(VCE = –110 Vdc, RBE = 10 kΩ) — — –10
(VEB = –6.0 Vdc, IC = 0) — — –200
1. FR– 5 = 1.0 0.062 in.

0.75
0.3
REV 1

BSS63LT1
ON CHARACTERISTICS
(IC = –10 mAdc, VCE = –1.0 Vdc) 30 — —
(IC = –25 mAdc, VCE = –1.0 Vdc) 30 — —
Collector – Emitter Saturation Voltage VCE(sat) mVdc
(IC = –25 mAdc, IB = –2.5 mAdc) — — –250
Base – Emitter Saturation Voltage VBE(sat) mVdc
(IC = –25 mAdc, IB = –2.5 mAdc) — — –900

(IC = –25 mAdc, VCE = –5.0 Vdc, f = 20 MHz) 50 95 —
Case Capacitance CC pF
(IE = IC = 0, VCB = –10 Vdc, f = 1.0 MHz) — — 20

MOTOROLA
Driver Transistor BSS64LT1

COLLECTOR
NPN Silicon 3
1
BASE
2 3
EMITTER
1
MAXIMUM RATINGS
2
Collector – Emitter Voltage VCEO 80 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
BSS64LT1 = AM

OFF CHARACTERISTICS
(IC = 4.0 mAdc) 80 —
(IC = 100 mAdc) 120 —
(IE = 100 mAdc) 5.0 —
(VCE = 90 Vdc) — 0.1
(TA = 150°C) — 500
(VEB = 4.0 Vdc) — 200
1. FR– 5 = 1.0 0.062 in.

0.75
0.3
REV 1

BSS64LT1
ON CHARACTERISTICS
DC Current Gain HFE —
(VCE = 1.0 Vdc, IC = 10 mAdc) 20 —
(IC = 4.0 mAdc, IB = 400 µAdc) — 0.15
(IC = 50 mAdc, IB = 15 mAdc) — 0.2
Forward Base – Emitter Voltage VBE(sat) — — —

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) 60 —
Output Capacitance Cob pF
(VCB = 10 Vdc, f = 1.0 MHz) — 20

MOTOROLA
Switching Transistor BSV52LT1

COLLECTOR
NPN Silicon 3
1
BASE
2 3
EMITTER
1
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
TA = 25°C
DEVICE MARKING
BSV52LT1 = B2

OFF CHARACTERISTICS
(IC = 1.0 mAdc) 12 —
(VCB = 10 Vdc, IE = 0) — 100 nAdc
(VCB = 10 Vdc, IE = 0, TA = 125°C) — 5.0 µAdc
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

BSV52LT1
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 25 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 40 120
(IC = 50 mAdc, VCE = 1.0 Vdc) 25 —
Collector – Emitter Saturation Voltage VCE(sat) mVdc
(IC = 10 mAdc, IB = 300 µAdc) — 300
(IC = 10 mAdc, IB = 1.0 mAdc) — 250
(IC = 50 mAdc, IB = 5.0 mAdc) — 400
Base – Emitter Saturation Voltage VBE(sat) mVdc
(IC = 10 mAdc, IB = 1.0 mAdc) 700 850
(IC = 50 mAdc, IB = 5.0 mAdc) — 1200

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) — 4.0
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) — 4.5
Storage Time ts ns
(IC = IB1 = IB2 = 10 mAdc) — 13
(VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc) — 12
(IC = 10 mAdc, IB = 3.0 mAdc) — 18

MOTOROLA
Preliminary Data Sheet DTA114YE

Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
3
Monolithic Bias Resistor Network
2
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic 1
bias network consisting of two resistors; a series base resistor and a base–emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by CASE 463–01, STYLE 1
i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e SOT–416/SC–90
SOT–416/SC–90 package which is ideal for low–power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design OUT (3)
R1
• Reduces Board Space IN (1)
• Reduces Component Count R2
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel. GND (2)
R1 = 10 kΩ
R2 = 47 kΩ
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Output Voltage VO – 50 Vdc
Input Voltage VI –40 Vdc
Output Current IO –100 mAdc
DEVICE MARKING
DTA114YE = 59
Power Dissipation @ TA = 25°C(1) PD *125 mW
Operating and Storage Temperature Range TJ, Tstg – 55 to +150 °C

Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) VI(off) — — –0.3 Vdc
Input On Voltage (VO = –0.3 Vdc, IO = –1.0 mAdc) VI(on) –1.4 — — Vdc
Output On Voltage (IO = –5.0 mAdc, II = –0.25 mAdc) VO(on) — — –0.3 Vdc
Input Current (VI = –5.0 Vdc) II — — –0.88 mAdc
Output Cutoff Current (VO = – 50 Vdc) IO(off) — — –500 nAdc
DC Current Gain (VO = –5.0 Vdc, IO = –5.0 mAdc) GI 68 — — —
Input Resistance R1 7.0 10 13 kOhms
Resistance Ratio R1/R2 0.17 0.21 0.25
REV 1

DTA114YE
1 180
TA = 75°C
G I , DC CURRENT GAIN (NORMALIZED)

IO/II = 10 160 VO(on) = 10 V
TA = –25°C
25°C
VO(on), OUTPUT VOLTAGE (V)
140
25°C
0.1 120 –25°C
75°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IO, OUTPUT CURRENT (mA) IO, OUTPUT CURRENT (mA)
Figure 1. VO(on) versus IO Figure 2. GI, DC Current Gain
100 10
TA = 75°C 25°C VO = 0.2 V 25°C
V I , INPUT VOLTAGE (VOLTS)
IO, OUTPUT CURRENT (mA)
TA = –25°C
–25°C 75°C
10 1
VO = 5 V
1 0.1
0 2 4 6 8 10 0 10 20 30 40 50
VI, INPUT VOLTAGE (V) IO, OUTPUT CURRENT (mA)
Figure 3. Output Current versus Input Voltage Figure 4. Input Voltage versus Output Current
+12 V
4.5
4 f = 1 MHz
lE = 0 V
3.5 TA = 25°C
Cob , CAPACITANCE (pF)
3 Typical Application
for PNP BRTs
2.5
2
1.5
1 LOAD
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance Figure 6. Inexpensive, Unregulated Current Source

MOTOROLA
Preliminary Data Sheet DTA143EE

3
2
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic 1
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by CASE 463–01, STYLE 1
i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 1 4 3 E E i s h o u s e d i n t h e SOT–416/SC–90
SOT–416/SC–90 package which is ideal for low–power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design OUT (3)
R1
• Reduces Board Space IN (1)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel. GND (2)
R1 = 4.7 kΩ
R2 = 4.7 kΩ

Output Voltage VO – 50 Vdc
Input Voltage VI –30 Vdc
Output Current IO –100 mAdc
DEVICE MARKING
DTA143EE = 43

Input Off Voltage (VO = –5.0 Vdc, IO = –100 µAdc) VI(off) — — –0.5 Vdc
Input On Voltage (VO = –0.3 Vdc, IO = –20 mAdc) VI(on) –3.0 — — Vdc
Output On Voltage (IO = –10 mAdc, II = –0.5 mAdc) VO(on) — — –0.3 Vdc
Input Current (VI = –5.0 Vdc) II — — –1.8 mAdc
Output Cutoff Current (VO = – 50 Vdc) IO(off) — — –500 nAdc
DC Current Gain (VO = –5.0 Vdc, IO = –10 mAdc) GI 20 — — —
Input Resistance R1 3.3 4.7 6.1 kOhms
* Typical electrical characteristic curves are not available at this time.

MOTOROLA
Preliminary Data Sheet DTC114TE

NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network 3
The BRT (Bias Resistor Transistor) contains a single transistor with a 2

monolithic bias network consisting of two resistors; a series base resistor and a 1
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these CASE 463–01, STYLE 1
individual components by integrating them into a single device. The DTC114TE SOT–416/SC–90
is housed in the SOT–416/SC–90 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
OUT (3)
R1
• Reduces Component Count IN (1)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
R1 = 10 kΩ GND (2)

Collector–Base Voltage VCBO 50 Vdc
Collector–Emitter Voltage VCEO 50 Vdc
DEVICE MARKING
DTC114TE = 94

Collector–Base Breakdown Voltage (IC = 50 µAdc) V(BR)CBO 50 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc) V(BR)CEO 50 — — Vdc
Emitter–Base Breakdown Voltage (IE = 50 µAdc) V(BR)EBO 5.0 — — Vdc
Collector–Base Cutoff Current (VCB = 50 Vdc) ICBO — — 500 nAdc
Emitter–Base Cutoff Current (VEB = 4.0 Vdc) IEBO — — 500 nAdc
DC Current Gain (IC = 1.0 mAdc, VCE = 5 Vdc) hFE 100 300 600 —
Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — — 0.3 Vdc
* Typical electrical characteristic curves are not available at this time.

MOTOROLA
Preliminary Data Sheet DTC114YE

Monolithic Bias Resistor Network 3
The BRT (Bias Resistor Transistor) contains a single transistor with a 2

monolithic bias network consisting of two resistors; a series base resistor and a 1
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these CASE 463–01, STYLE 1
individual components by integrating them into a single device. The DTC114YE SOT–416/SC–90
is housed in the SOT–416/SC–90 package which is ideal for low power surface
mount applications where board space is at a premium.
OUT (3)
R1
• Reduces Component Count IN (1)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel. R2
GND (2)
R1 = 10 kΩ
R2 = 47 kΩ

Output Voltage VO 50 Vdc
Input Voltage VI 40 Vdc
Output Current IO 100 mAdc
DEVICE MARKING
DTC114YE = 69

Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) VI(off) — — 0.3 Vdc
Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc) VI(on) 1.4 — — Vdc
Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc) VO(on) — — 0.3 Vdc
Input Current (VI = 5.0 Vdc) II — — 0.88 mAdc
Output Cutoff Current (VO = 50 Vdc) IO(off) — — 500 nAdc
DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc) GI 68 — — —
REV 1

DTC114YE
1 300
VO(on) = 10 TA = 75°C
G I , DC CURRENT GAIN (NORMALIZED)

IO/II = 10
VO(on), OUTPUT VOLTAGE (V)
TA = –25°C 250
25°C 25°C
0.1 200
75°C –25°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IO, OUTPUT CURRENT (mA) IO, OUTPUT CURRENT (mA)
Figure 1. VO(on) versus IO Figure 2. GI, DC Current Gain
100 10
TA = 75°C 25°C VO = 0.2 V TA = –25°C

25°C
V I , INPUT VOLTAGE (VOLTS)
IO, OUTPUT CURRENT (mA)
75°C
–25°C
10 1
VO = 5 V
1 0.1
0 2 4 6 8 10 0 10 20 30 40 50
VI, INPUT VOLTAGE (V) IO, OUTPUT CURRENT (mA)
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
1.5
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance

DTC114YE
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 7. Open Collector Inverter: Inverts the Input Signal Figure 8. Inexpensive, Unregulated Current Source

MOTOROLA
MBT3904DW1T1
Dual General Purpose Transistors MBT3906DW1T1
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
MBT3946DW1T1
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for low–power surface mount applications where board space is at
MBT3904DW1T1
a premium. MBT3906DW1T1
• hFE, 100–300 MBT3946DW1T1
• Low VCE(sat), ≤ 0.4 V 6 5
4
• Reduces Board Space 1
2
• Reduces Component Count 3
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel CASE 419B–01, STYLE 1
MBT3904DW1T1
(3) (2) (1)
MAXIMUM RATINGS
Rating Symbol Value Unit Q1 Q2
Collector – Emitter Voltage MBT3904DW1T1 (NPN) VCEO 40 Vdc

MBT3906DW1T1 (PNP) –40
(4) (5) (6)
Collector – Base Voltage MBT3904DW1T1 (NPN) VCBO 60 Vdc
MBT3906DW1T1 (PNP) –40
Emitter – Base Voltage MBT3904DW1T1 (NPN) VEBO 6.0 Vdc MBT3906DW1T1
MBT3906DW1T1 (PNP) –5.0 (3) (2) (1)
Collector Current — Continuous IC mAdc

MBT3904DW1T1 (NPN) 200
Q1 Q2
MBT3906DW1T1 (PNP) –200
Characteristic Symbol Max Unit (4) (5) (6)
Total Package Dissipation(1) PD 150 mW

TA = 25°C
MBT3946DW1T1*
Thermal Resistance Junction to Ambient RqJA 833 °C/W (3) (2) (1)
Junction and Storage Temperature TJ, Tstg – 55 to °C

+150
Q1 Q2
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING (4) (5) (6)
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MBT3904DW1T1 (NPN) 40 —
(IC = –1.0 mAdc, IB = 0) MBT3906DW1T1 (PNP) –40 —
(IC = 10 mAdc, IE = 0) MBT3904DW1T1 (NPN) 60 —
(IC = –10 mAdc, IE = 0) MBT3906DW1T1 (PNP) –40 —
(IE = 10 mAdc, IC = 0) MBT3904DW1T1 (NPN) 6.0 —
(IE = –10 mAdc, IC = 0) MBT3906DW1T1 (PNP) –5.0 —
Base Cutoff Current IBL nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
(VCE = –30 Vdc, VEB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
(VCE = 30 Vdc, VEB = 3.0 Vdc) MBT3904DW1T1 (NPN) — 50
(VCE = –30 Vdc, VEB = –3.0 Vdc) MBT3906DW1T1 (PNP) — –50
(IC = 0.1 mAdc, VCE = 1.0 Vdc) MBT3904DW1T1 (NPN) 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 —
(IC = –0.1 mAdc, VCE = –1.0 Vdc) MBT3906DW1T1 (PNP) 60 —

(IC = –1.0 mAdc, VCE = –1.0 Vdc) 80 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 300
(IC = –50 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 30 —
(IC = 10 mAdc, IB = 1.0 mAdc) MBT3904DW1T1 (NPN) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.3
(IC = –10 mAdc, IB = –1.0 mAdc) MBT3906DW1T1 (PNP) — –0.25

(IC = –50 mAdc, IB = –5.0 mAdc) — –0.4
(IC = 10 mAdc, IB = 1.0 mAdc) MBT3904DW1T1 (NPN) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95
(IC = –10 mAdc, IB = –1.0 mAdc) MBT3906DW1T1 (PNP) –0.65 –0.85

(IC = –50 mAdc, IB = –5.0 mAdc) — –0.95

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MBT3904DW1T1 (NPN) 300 —
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) MBT3906DW1T1 (PNP) 250 —
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 4.0
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP) — 4.5
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) — 8.0
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP) — 10.0
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 10
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 2.0 12
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 0.5 8.0
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 100 400
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP) 100 400
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) 1.0 40
Noise Figure NF dB
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3904DW1T1 (NPN) — 5.0
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3906DW1T1 (PNP) — 4.0
Delay Time (VCC = 3.0 Vdc, VBE = – 0.5 Vdc) MBT3904DW1T1 (NPN) td — 35
(VCC = –3.0 Vdc, VBE = 0.5 Vdc) MBT3906DW1T1 (PNP) — 35
ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MBT3904DW1T1 (NPN) tr — 35
(IC = –10 mAdc, IB1 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MBT3904DW1T1 (NPN) ts — 200
(VCC = –3.0 Vdc, IC = –10 mAdc) MBT3906DW1T1 (PNP) — 225
ns
Fall Time (IB1 = IB2 = 1.0 mAdc) MBT3904DW1T1 (NPN) tf — 50
(IB1 = IB2 = –1.0 mAdc) MBT3906DW1T1 (PNP) — 75

MBT3904DW1T1 (NPN)
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
275 275
10 k 10 k
0
– 0.5 V
< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*
– 9.1 V′
< 1 ns

TJ = 25°C
TJ = 125°C
10 5000
MBT3904DW1T1 (NPN) VCC = 40 V MBT3904DW1T1 (NPN)
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MBT3904DW1T1 (NPN)
500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200
100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)
50 50
30 30
40 V
20 20
15 V
10 10 MBT3904DW1T1 (NPN)
MBT3904DW1T1 (NPN)
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
t′s = ts – 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20
10 MBT3904DW1T1 (NPN) 10 MBT3904DW1T1 (NPN)

7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

12 14
IC = 1.0 mA 12
10

8 IC = 50 mA
IC = 0.5 mA
8
IC = 50 mA 6
4
4

IC = 100 mA MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
Figure 9. Noise Figure Figure 10. Noise Figure

MBT3904DW1T1 (NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100

MBT3904DW1T1 (NPN) 50 MBT3904DW1T1 (NPN)
200
h fe , CURRENT GAIN
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
hre , VOLTAGE FEEDBACK RATIO (x 10 –4)

20 10
7.0
10 MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

MBT3904DW1T1 (NPN)

2.0
TJ = +125°C MBT3904DW1T1 (NPN) VCE = 1.0 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
MBT3904DW1T1 (NPN) TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0
TJ = 25°C MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
0.8 0 – 55°C TO +25°C

VBE @ VCE =1.0 V
0.6 – 0.5
– 55°C TO +25°C
0.4 – 1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MBT3906DW1T1 (PNP)
3V 3V
+9.1 V < 1 ns
275 275
< 1 ns
+0.5 V 10 k 10 k
0
Cs < 4 pF* 1N916 Cs < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2%

TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
MBT3906DW1T1 (PNP) 3000 MBT3906DW1T1 (PNP)
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0 Cobo
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

500 500
MBT3906DW1T1 (PNP) IC/IB = 10 MBT3906DW1T1 (PNP) VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
100 100
70 70
TIME (ns)
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MBT3906DW1T1 (PNP)

5.0 12
IC = 1.0 mA
10
4.0

IC = 0.5 mA 8
3.0
IC = 50 mA 6
2.0
4 IC = 50 mA

IC = 100 mA 2
MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
MBT3906DW1T1 (PNP) 70 MBT3906DW1T1 (PNP)
50
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

hre , VOLTAGE FEEDBACK RATIO (x 10 –4)
20 10
7.0
10 MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

7.0 5.0
5.0
3.0 3.0
2.0 2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MBT3906DW1T1 (PNP)

2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
MBT3906DW1T1 (PNP)
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
MBT3906DW1T1 (PNP) TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0

0.5 +25°C TO +125°C
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)
0
0.6 – 55°C TO +25°C
MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)
– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
– 1.5
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
Chopper Transistor MMBT404ALT1

PNP Silicon
COLLECTOR
3 Motorola Preferred Device
1
BASE
3
2
EMITTER 1
2
MAXIMUM RATINGS
Rating Symbol Value Unit SOT– 23 (TO – 236AB)
Emitter–Base Voltage VEBO –25 Vdc
DEVICE MARKING
MMBT404ALT1 = 2N
Total Device Dissipation FR-5 Board,* PD 225 mW
TA = 25°C
Alumina Substrate,** TA = 25°C
* FR–5 = 1.0 x 0.75 x 0.062 in.
** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO –35 — — Vdc
(IC = –10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CBO –40 — — Vdc
(IC = –10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO –25 — — Vdc
(IE = –10 µAdc, IC = 0)
(VCB = –10 Vdc, IE = 0)
(VEB = –10 Vdc, IC = 0)

MMBT404ALT1
ON CHARACTERISTICS
DC Current Gain hFE 100 — 400 —
(IC = –12 mAdc, VCE = –0.15 Vdc)
(IC = –12 mAdc, IB = –0.4 mAdc) — — –0.15
(IC = –24 mAdc, IB = –1.0 mAdc) — — –0.2
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = –12 mAdc, IB = –0.4 mAdc) — — –0.85
(IC = –24 mAdc, IB = –1.0 mAdc) — — –1.0
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
Delay time td — 43 — ns
(VCC = –10 Vdc, IC = –10 mAdc) (Figure 1)
Rise Time tr — 180 — ns
(IB1 = –1.0 mAdc, VBE(off) = –14 Vdc)
Storage Time ts — 675 — ns
(VCC = –10 Vdc, IC = –10 mAdc)
Fall Time tf — 160 — ns
(IB1 = IB2 = –1.0 mAdc) (Figure 1)
VBB VCC = –10 V
RBB
1.0 k
1.0 k
TO SCOPE
0.1 µF RB
Vin
10 k
51
Vin VBB
(Volts) (Volts)
ton, td, tr –12 +1.4
toff, ts and tf +20.6 –11.6
Voltages and resistor values shown are
for IC = 10 mA, IC/IB = 10 and IB1 = IB2

MOTOROLA
VHF/UHF Transistor
MMBT918LT1
NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER 1
MAXIMUM RATINGS
2
SOT– 23 (TO – 236AB)
Total Device Dissipation FR– 5 Board,(1) PD 225 mW
TA = 25°C
DEVICE MARKING
MMBT918LT1 = M3B

OFF CHARACTERISTICS
(IC = 3.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 15 Vdc, IE = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MMBT918LT1
ON CHARACTERISTICS

(VCB = 0 Vdc, IE = 0, f = 1.0 MHz) — 3.0
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 1.7
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 Ω, f = 60 MHz) (Figure 1)
Power Output Pout 30 — mW
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain Gpe 11 — dB

(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
VBB VCC
EXTERNAL
100 k 1000 pF BYPASS
0.018 µF
C RF
0.018 µF 50 Ω VM
3 G
0.018 µF
0.018 µF
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50 Ω
f = 60 MHz
Gpe TEST CONDITIONS

IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
Figure 1. NF, Gpe Measurement Circuit 20–200

MOTOROLA

MMBT1010LT1
Low Saturation Voltage MSD1010T1
PNP Silicon Driver Transistors Motorola Preferred Devices
Part of the GreenLine Portfolio of devices with energy–conserving traits.

PNP GENERAL
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy
PURPOSE DRIVER
in general purpose driver applications. This device is housed in the SOT-23 and
TRANSISTORS
SC–59 packages which are designed for low power surface mount
SURFACE MOUNT
applications.
• Low VCE(sat), < 0.1 V at 50 mA
Applications
3
• LCD Backlight Driver
• Annunciator Driver 1
• General Output Device Driver 2
MAXIMUM RATINGS (TA = 25°C) CASE 318–08, STYLE 6

SOT-23
Collector-Base Voltage V(BR)CBO 45 Vdc
Emitter-Base Voltage V(BR)EBO 5.0 Vdc 3
Collector Current — Continuous IC 100 mAdc 2

1
DEVICE MARKING
MMBT1010LT1 = GLP CASE 318D–04, STYLE 1
MSD1010T1 = GLP SC-59
Rating Symbol Max Unit COLLECTOR
Power Dissipation PD(1) 250 mW

TA = 25°C
Thermal Resistance Junction to Ambient RθJA 556 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Condition Min Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 15 — Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA, IE = 0 5.0 — Vdc
Collector-Base Cutoff Current ICBO VCB = 20 V, IE = 0 — 0.1 µA
Collector-Emitter Cutoff Current ICEO VCE = 10 V, IB = 0 — 100 µA
DC Current Gain hFE1(2) VCE = 5 V, IC = 100 mA 300 600 —
Collector-Emitter Saturation Voltage VCE(sat)(2) IC = 10 mA, IB = 1.0 mA — 0.1 Vdc
IC = 50 mA, IB = 5.0 mA — 0.1
IC = 100 mA, IB = 10 mA 0.19
Base-Emitter Saturation Voltage VBE(sat)(2) IC = 100 mA, IB = 10 mA — 1.1 Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
REV 2

MOTOROLA
Preliminary Information
General Purpose Transistor MMBT2222AWT1
NPN Silicon Motorola Preferred Device
These transistors are designed for general purpose amplifier applica-

tions. They are housed in the SOT–323/SC–70 package which is
designed for low power surface mount applications. COLLECTOR
3
3
1
1
BASE
2
2
EMITTER
SOT– 323/SC – 70
MAXIMUM RATINGS
Total Device Dissipation FR– 5 Board PD 150 mW
TA = 25°C
DEVICE MARKING
MMBT2222AWT1 = 1P

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)


MMBT2222AWT1
DC Current Gain (1) HFE —
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 150 mAdc, VCE = 10 Vdc) 100 —
(IC = 500 mAdc, VCE = 10 Vdc) 40 —
(IC = 150 mAdc, IB = 15 mAdc) — 0.3
(IC = 500 mAdc, IB = 50 mAdc) — 1.0
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) — 2.0

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 30 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie 0.25 1.25 k ohms
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio hre — 4.0 X 10– 4
Small – Signal Current Gain hfe 75 375 —
Output Admittance hoe 25 200 mmhos
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
Delay Time ((VCC = 3.0 Vdc, VBE = – 0.5 Vdc, td — 10
ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr — 25
Storage Time ((VCC = 30 Vdc, IC = 150 mAdc, ts — 225
ns
Fall Time IB1 = IB2 = 15 mAdc) tf — 60

MOTOROLA
General Purpose Transistors MMBT2222LT1

COLLECTOR
MMBT2222ALT1*
NPN Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol 2222 2222A Unit 2
Collector – Base Voltage VCBO 60 75 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Emitter – Base Voltage VEBO 5.0 6.0 Vdc
TA = 25°C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 V(BR)CEO 30 — Vdc
MMBT2222A 40 —
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 V(BR)CBO 60 — Vdc

MMBT2222A 75 —
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 V(BR)EBO 5.0 — Vdc
MMBT2222A 6.0 —
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX — 10 nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222 ICBO — 0.01 µAdc
(VCB = 60 Vdc, IE = 0) MMBT2222A — 0.01
(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222 — 10
(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A — 10
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO — 100 nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL — 20 nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT2222LT1 MMBT2222ALT1
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) MMBT2222A only 35 —
(IC = 150 mAdc, VCE = 10 Vdc) (3) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc) (3) 50 —
(IC = 500 mAdc, VCE = 10 Vdc) (3) MMBT2222 30 —
MMBT2222A 40 —
Collector – Emitter Saturation Voltage (3) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) MMBT2222 — 0.4
MMBT2222A — 0.3

MMBT2222A — 1.0
Base – Emitter Saturation Voltage (3) VBE(sat) Vdc
MMBT2222A 0.6 1.2

MMBT2222A — 2.0

Current – Gain — Bandwidth Product (4) fT MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222 250 —
MMBT2222A 300 —
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 8.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222 — 30
MMBT2222A — 25
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 0.25 1.25
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A — 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A — 4.0
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 75 375
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A 25 200
Collector Base Time Constant rb, Cc ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A — 150
Noise Figure NF dB
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A — 4.0
SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time ((VCC = 30 Vdc, VBE(off) = – 0.5 Vdc, td — 10
ns
ns

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200
0 0
1 kΩ –14 V 1k CS* < 10 pF
–2 V CS* < 10 pF
< 2 ns < 20 ns
1N914
Scope rise time < 4 ns –4 V

*Total shunt capacitance of test jig, connectors, and oscilloscope.
1000
700
500
300
200
100
70
50
30
20
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k

1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts – 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
td @ VEB(off) = 2.0 V
100
td @ VEB(off) = 0
t, TIME (ns)
30
t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 5. Turn – On Time Figure 6. Turn – Off Time
10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 Ω RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 µA, RS = 200 Ω IC = 50 µA

100 µA, RS = 2.0 kΩ 100 µA
6.0 50 µA, RS = 4.0 kΩ 6.0 500 µA
1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)
10 200
7.0
5.0
100
Ccb
3.0 70
2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product

1.0 +0.5
TJ = 25°C
0.8 0 RqVC for VCE(sat)

V, VOLTAGE (VOLTS)
1.0 V – 0.5
0.6
VBE(on) @ VCE = 10 V – 1.0
0.4
– 1.5
0.2
– 2.0 RqVB for VBE
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
Switching Transistors MMBT2369LT1

MMBT2369ALT1*
COLLECTOR
3
NPN Silicon
1 *Motorola Preferred Device
BASE
2
MAXIMUM RATINGS EMITTER 3
1
2
Collector – Base Voltage VCBO 40 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) 15 — —
(IC = 10 µAdc, VBE = 0) 40 — —
(IC = 10 mAdc, IE = 0) 40 — —
(IE = 10 mAdc, IC = 0) 4.5 — —
(VCB = 20 Vdc, IE = 0) — — 0.4
(VCB = 20 Vdc, IE = 0, TA = 150°C) — — 30
Collector Cutoff Current ICES µAdc
(VCE = 20 Vdc, VBE = 0) MMBT2369A — — 0.4
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

ON CHARACTERISTICS
DC Current Gain (3) hFE —
(IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369 40 — 120
(IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A — — 120
(IC = 10 mAdc, VCE = 0.35 Vdc) MMBT2369A 40 — —
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) MMBT2369A 20 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) MMBT2369 20 — —
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369 — — 0.25
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A — — 0.20
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MMBT2369A — — 0.30
(IC = 100 mAdc, IB = 10 mAdc) MMBT2369A — — 0.50
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A 0.7 — 0.85
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) MMBT2369A — — 1.02
(IC = 100 mAdc, IB = 10 mAdc) MMBT2369A — — 1.60

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) — — 4.0
Small Signal Current Gain hfe —
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 5.0 — —
Storage Time ts ns
(IB1 = IB2 = IC = 10 mAdc) — 5.0 13
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) — 8.0 12
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) — 10 18

SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
t1 270 Ω t1 270 Ω
+10.6 V 3V +10.75 V
0 0
–1.5 V < 1 ns –9.15 V
3.3 k Cs* < 4 pF < 1 ns 3.3 k Cs* < 4 pF
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2% DUTY CYCLE = 2%
Figure 1. ton Circuit — 10 mA Figure 3. toff Circuit — 10 mA
95 Ω t1 95 Ω
t1 10 V 10 V
+10.8 V +11.4 V
0
0 –8.6 V
–2 V 1k Cs* < 12 pF
< 1 ns 1k Cs* < 12 pF < 1 ns
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) BETWEEN 1N916
DUTY CYCLE = 2% 10 AND 500 µs
DUTY CYCLE = 2%
Figure 2. ton Circuit — 100 mA Figure 4. toff Circuit — 100 mA
* Total shunt capacitance of test jig and connectors.
TO OSCILLOSCOPE
TURN–ON WAVEFORMS
INPUT IMPEDANCE = 50 Ω
Vin 0.1 µF RISE TIME = 1 ns
10% 220 Ω
0 Vout TURN–OFF WAVEFORMS
Vout 3.3 kΩ
90% Vin 0 10%
ton Vin
3.3 k 50 Ω
0.0023 µF 0.0023 µF 90%
PULSE GENERATOR 50 Ω 0.005 µF 0.005 µF
Vout
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω VBB = +12 V
VBB +– 0.1 µF 0.1 µF +V =3V
PW ≥ 300 ns – CC toff Vin = –15 V
DUTY CYCLE < 2%
Figure 5. Turn–On and Turn–Off Time Test Circuit
6 100
5 TJ = 25°C LIMIT βF = 10
TYPICAL VCC = 10 V
50
4 VOB = 2 V
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
Cib tf
3 Cob tr (VCC = 3 V)
20 VCC = 10 V
tr
2 10
5 ts
td
1 2
0.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100
Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times

500
VCC = 10 V QT, βF = 10
25°C
100°C
200 QT, βF = 40 270 VALUES REFER TO
t1
+5 V 3V IC = 10 mA TEST
CHARGE (pC)
10 pF MAX
100 ∆V
0
< 1 ns Cs* < 4 pF
50 4.3 k
PULSE WIDTH (t1) = 5 µs
QA, VCC = 10 V DUTY CYCLE = 2%
20 QA, VCC = 3 V
Figure 9. QT Test Circuit
10
1 2 5 10 20 50 100
Figure 8. Maximum Charge Data
t1 980
C < COPT +6 V 10 V
C=0 0
C COPT –4 V
< 1 ns 500 Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
TIME
DUTY CYCLE = 2%
Figure 10. Turn–Off Waveform Figure 11. Storage Time Equivalent Test Circuit
VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA
0.6
0.4
0.2
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20
Figure 12. Maximum Collector Saturation Voltage Characteristics

200
hFE , MINIMUM DC CURRENT GAIN
TJ = 125°C
VCE = 1 V
100 75°C
25°C
TJ = 25°C and 75°C

–15°C
50
–55°C
20
1 2 5 10 20 50 100
Figure 13. Minimum Current Gain Characteristics
1.4 1.0
βF = 10
V(sat) , SATURATION VOLTAGE (VOLTS)
TJ = 25°C 0.5 (25°C to 125°C)

1.2 θVC for VCE(sat)
MAX VBE(sat) 0
1.0 APPROXIMATE DEVIATION (–55°C to +25°C)
FROM NOMINAL
–0.5 –55°C to +25°C 25°C to 125°C
0.8 MIN VBE(sat) θVC ±0.15 mV/°C ±0.15 mV/°C
(–55°C to +25°C)
–1.0 θVB ±0.4 mV/°C ±0.3 mV/°C
0.6 (25°C to 125°C)
–1.5
θVB for VBE(sat)
0.4
MAX VCE(sat) –2.0
0.2 –2.5
1 2 5 10 20 50 100 0 10 20 30 40 50 60 70 80 90 100
Figure 14. Saturation Voltage Limits Figure 15. Typical Temperature Coefficients

MOTOROLA
Low Noise Transistor MMBT2484LT1

COLLECTOR
NPN Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT2484LT1 = 1U

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) 60 —
(IC = 10 mAdc, IE = 0) 60 —
(IE = 10 mAdc, IC = 0) 5.0 —
(VCB = 45 Vdc, IE = 0) — 10 nAdc
(VEB = 5.0 Vdc, IC = 0) — 10
1. FR– 5 = 1.0 0.062 in.
0.75
0.3

MMBT2484LT1
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 250 —
(IC = 10 mAdc, VCE = 5.0 Vdc) — 800
(IC = 1.0 mAdc, IB = 0.1 mAdc) — 0.35
(IC = 1.0 mAdc, VCE = 5.0 mAdc) — 0.95

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) — 6.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 6.0
Noise Figure NF dB
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz, BW = 200 Hz) — 3.0
RS
in
en
IDEAL
TRANSISTOR

MMBT2484LT1
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
100 Hz NOISE DATA

300 20
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

MMBT2484LT1
4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4

TJ = 25°C
0.8 – 0.8
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA
Preliminary Information
General Purpose Transistor MMBT2907AWT1
PNP Silicon Motorola Preferred Device
These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications. COLLECTOR
3
3
1
1
BASE
2
2
EMITTER
SOT– 323/SC – 70
MAXIMUM RATINGS
TA = 25°C
DEVICE MARKING
MMBT2907AWT1 = 2F

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) V(BR)CEO –60 — Vdc
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current IBL — –50 nAdc
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current ICEX — –50 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Pulse Test: Pulse Width v
300 ms, Duty Cycle v 2.0%.

MMBT2907AWT1
(IC = –0.1 mAdc, VCE = –10 Vdc) 75 —
(IC = –1.0 mAdc, VCE = –10 Vdc) 100 —
(IC = –10 mAdc, VCE = –10 Vdc) 100 —
(IC = –150 mAdc, VCE = –10 Vdc) 100 —
(IC = –500 mAdc, VCE = –10 Vdc) 50 —
(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –1.6
(IC = –150 mAdc, IB = –15 mAdc) — –1.3
(IC = –500 mAdc, IB = –50 mAdc) — –2.6

(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time ton — 45
(VCC = –30
30 Vd
Vdc,
Delay Time td — 10
IC = –150
150 mAdc, IB1 = –15
15 mAdc)
Rise Time tr — 40
ns
Storage Time ts — 80
(VCC = –6.0
6 0 Vd
Vdc, IC = –150
150 mAdc,
Ad
Fall Time tf — 30
IB1 = IB2 = 15 mAdc)
Turn–Off Time toff — 100

MOTOROLA
General Purpose Transistors MMBT2907LT1

PNP Silicon COLLECTOR
3
MMBT2907ALT1*
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol 2907 2907A Unit 2
Collector – Base Voltage VCBO –60 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0) MMBT2907 –40 —
MMBT2907A –60 —
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) ICEX — –50 nAdc
(VCB = –50 Vdc, IE = 0) MMBT2907 — –0.020
MMBT2907A — –0.010
(VCB = –50 Vdc, IE = 0, TA = 125°C) MMBT2907 — –20

MMBT2907A — –10
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB — –50 nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
300 ms, Duty Cycle v
2.0%.

ON CHARACTERISTICS
(IC = –0.1 mAdc, VCE = –10 Vdc) MMBT2907 35 —
MMBT2907A 75 —
(IC = –1.0 mAdc, VCE = –10 Vdc) MMBT2907 50 —

MMBT2907A 100 —
(IC = –10 mAdc, VCE = –10 Vdc) MMBT2907 75 —

MMBT2907A 100 —
(IC = –150 mAdc, VCE = –10 Vdc) (3) MMBT2907 — —

MMBT2907A 100 300
(IC = –500 mAdc, VCE = –10 Vdc) (3) MMBT2907 30 —

MMBT2907A 50 —

(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –1.6
(IC = –150 mAdc, IB = –15 mAdc) — –1.3
(IC = –500 mAdc, IB = –50 mAdc) — –2.6

Current – Gain — Bandwidth Product (3),(4) fT MHz
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) 200 —
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) — 8.0
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) — 30
Turn–On Time ton — 45
(VCC = –30
30 Vdc,
Vd IC = –150
150 mAdc,
Ad
Delay Time td — 10 ns
IB1 = –15
15 mAdc)
Rise Time tr — 40
Turn–Off Time toff — 100
(VCC = –6.0
6 0 Vd
Vdc, IC = –150
150 mAdc,
Ad
Storage Time ts — 80 ns
IB1 = IB2 = –15
15 mAdc)
Fall Time tf — 30

2.0%.
INPUT INPUT
Zo = 50 Ω –30 V Zo = 50 Ω +15 V –6.0 V
PRF = 150 PPS PRF = 150 PPS
RISE TIME ≤ 2.0 ns 200 RISE TIME ≤ 2.0 ns
1.0 k 37
P.W. < 200 ns P.W. < 200 ns
1.0 k 1.0 k
0 TO OSCILLOSCOPE 0 TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns RISE TIME ≤ 5.0 ns
–16 V 50 –30 V 50 1N916
200 ns 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

3.0
VCE = –1.0 V
hFE , NORMALIZED CURRENT GAIN
2.0 VCE = –10 V TJ = 125°C
25°C
1.0
0.7 – 55°C
0.5
0.3
0.2
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

–1.0
–0.8
IC = –1.0 mA –10 mA –100 mA –500 mA
–0.6
–0.4
–0.2
0
–0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
300 500
200 300 VCC = –30 V
VCC = –30 V
IC/IB = 10 200 IC/IB = 10
100 tr
TJ = 25°C tf IB1 = IB2
70 100 TJ = 25°C
50
t, TIME (ns)
t, TIME (ns)
70
30 50
20 t′s = ts – 1/8 tf
30
td @ VBE(off) = 0 V
20
10
7.0 10
5.0 2.0 V
7.0
3.0 5.0
–5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT (mA)

TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0

6.0 IC = –1.0 mA, Rs = 430 Ω 6.0 IC = –50 µA
–500 µA, Rs = 560 Ω
–100 µA
–50 µA, Rs = 2.7 kΩ
–500 µA
4.0 –100 µA, Rs = 1.6 kΩ 4.0 –1.0 mA
2.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS)

30 400
300
20 Ceb
200
C, CAPACITANCE (pF)
10
100
7.0 80 VCE = –20 V
60 TJ = 25°C
5.0 Ccb
40
3.0 30
2.0 20
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
–1.0 +0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10 0
–0.8 RqVC for VCE(sat)
COEFFICIENT (mV/ ° C)
V, VOLTAGE (VOLTS)
VBE(on) @ VCE = –10 V –0.5

–0.6
–1.0
–0.4
–1.5
–0.2
–2.0 RqVB for VBE
0 –2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 11. “On” Voltage Figure 12. Temperature Coefficients

MOTOROLA
Switching Transistor MMBT3640LT1

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT3640LT1 = 2J

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) V(BR)CES –12 — Vdc
Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) VCEO(sus) –12 — Vdc
Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –12 — Vdc
(VCE = –6.0 Vdc, VBE = 0) — –0.01
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C) — –1.0
Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0) IB — –10 nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT3640LT1
(IC = –10 mAdc, VCE = –0.3 Vdc) 30 120
(IC = –50 mAdc, VCE = –1.0 Vdc) 20 —
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.2
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.6
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C) — –0.25
(IC = –10 mAdc, IB = –0.5 mAdc) –0.75 –0.95
(IC = –10 mAdc, IB = –1.0 mAdc) –0.8 –1.0
(IC = –50 mAdc, IB = –5.0 mAdc) — –1.5
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) 500 —
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) — 3.5
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) — 3.5
Delay Time ((VCC = –6.0 Vdc, IC = –50 mAdc, td — 10
ns
Rise Time VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc) tr — 30
Storage Time ((VCC = –6.0 Vdc, IC = –50 mAdc, ts — 20
ns
Fall Time IB1 = IB2 = –5.0 mAdc) tf — 12
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc) — 25
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc) — 60
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = IB2 = –5.0 mAdc) — 35
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc) — 75
VBB = +1.9 V VCC = –6.0 V VBB = –6.0 V VCC = 1.5 V
110 130
1.0 k 5.0 k
0 Vout 5.0 V Vout
0.1 µF 680 0.1 µF 5.0 k
–6.8 V Vin 0 Vin
PULSE SOURCE TO SAMPLING SCOPE PULSE SOURCE TO SAMPLING SCOPE
51 INPUT Z ≥ 100 k 51 INPUT Z ≥ 100 k
PULSE WIDTH ≥ 100 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 200 ns RISE TIME ≤ 1.0 ns
Zin = 50 OHMS Zin = 50 OHMS
NOTES: Collector Current = 50 mA, NOTES: Collector Current = 10 mA,
FALL TIME ≤ 1.0 ns FALL TIME ≤ 1.0 ns
NOTES: Turn–On and Turn–Off Time NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA. NOTES: Base Currents = 0.5 mA.
Figure 1. Figure 2.

MMBT3640LT1
200 –1.4
VCE = –1.0 V TJ = 25°C
–1.2
TJ = 125°C
100
25°C –1.0 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
70
–0.8
50 –55°C
–0.6
30
–0.4
20
–0.2 VCE(sat) @ IC/IB = 10
10 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
Figure 3. DC Current Gain Figure 4. “On” Voltages

–1.0 +0.5
*APPLIES FOR IC/IB ≤ hFE/4

TJ = 25°C 25°C to 125°C
–0.8 0
IC = –1.0 mA –5.0 mA –20 mA –80 mA RθVC for VCE(sat)
–55°C to 25°C
–0.6 –0.5
–0.4 –1.0
–0.2 –1.5 25°C to 125°C
RθVB for VBE –55°C to 25°C

0 –2.0
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
Figure 5. Collector Saturation Region Figure 6. Temperature Coefficients

2000 5.0
TJ = 25°C TJ = 25°C
f = 100 MHz VCE = –10 V
3.0
C, CAPACITANCE (pF)
1000
–1.0 V
800 2.0
Cobo
600 Cibo
400 1.0
0.7
200 0.5
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20

MOTOROLA
General Purpose Transistor MMBT3904LT1

NPN Silicon COLLECTOR
1
BASE
3
2
EMITTER 1
MAXIMUM RATINGS 2
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT3904LT1 = 1AM

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
2.0%.
REV 1

MMBT3904LT1
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.3
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie 1.0 10 k ohms
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio hre 0.5 8.0 X 10– 4
Small – Signal Current Gain hfe 100 400 —
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
Delay Time ((VCC = 3.0 Vdc, VBE = – 0.5 Vdc, td — 35
ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35
Storage Time ((VCC = 3.0 Vdc, ts — 200
ns
Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf — 50

MMBT3904LT1
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
275 275
10 k 10 k
0
– 0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
– 9.1 V′
< 1 ns
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MMBT3904LT1
500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200
100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)
50 50
30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
t′s = ts – 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20
10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

12 14
IC = 1.0 mA 12
10

8 IC = 50 mA
IC = 0.5 mA
8
IC = 50 mA 6
4
4

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

MMBT3904LT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100

50
200
h fe , CURRENT GAIN
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 7.0

10
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MMBT3904LT1

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)

V, VOLTAGE (VOLTS)
0.8 0 – 55°C TO +25°C

VBE @ VCE =1.0 V
0.6 – 0.5
– 55°C TO +25°C
0.4 – 1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
General Purpose Transistors NPN

NPN and PNP Silicon MMBT3904WT1
PNP
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount MMBT3906WT1
applications.
MAXIMUM RATINGS
Rating Symbol Value Unit GENERAL PURPOSE
Collector – Emitter Voltage MMBT3904WT1 VCEO 40 Vdc AMPLIFIER TRANSISTORS
MMBT3906WT1 –40 SURFACE MOUNT
Collector – Base Voltage MMBT3904WT1 VCBO 60 Vdc
MMBT3906WT1 –40
Emitter – Base Voltage MMBT3904WT1 VEBO 6.0 Vdc
MMBT3906WT1 –5.0
3
Collector Current — Continuous MMBT3904WT1 IC 200 mAdc
MMBT3906WT1 –200
1
THERMAL CHARACTERISTICS 2

Total Device Dissipation(1) PD 150 mW
SOT–323/SC–70
TA = 25°C
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBT3904WT1 40 —
(IC = –1.0 mAdc, IB = 0) MMBT3906WT1 –40 —
(IC = 10 mAdc, IE = 0) MMBT3904WT1 60 —
(IC = –10 mAdc, IE = 0) MMBT3906WT1 –40 —
(IE = 10 mAdc, IC = 0) MMBT3904WT1 6.0 —
(IE = –10 mAdc, IC = 0) MMBT3906WT1 –5.0 —
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1 — 50
(VCE = –30 Vdc, VEB = –3.0 Vdc) MMBT3906WT1 — –50
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1 — 50
(VCE = –30 Vdc, VEB = –3.0 Vdc) MMBT3906WT1 — –50
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
300 ms; Duty Cycle v 2.0%.

NPN MMBT3904WT1 PNP MMBT3906WT1
(IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 —
(IC = –0.1 mAdc, VCE = –1.0 Vdc) MMBT3906WT1 60 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 80 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 300
(IC = –50 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 30 —
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1 — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.3
(IC = –10 mAdc, IB = –1.0 mAdc) MMBT3906WT1 — –0.25
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.4
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95
(IC = –10 mAdc, IB = –1.0 mAdc) MMBT3906WT1 –0.65 –0.85
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.95
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1 300 —
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) MMBT3906WT1 250 —
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1 — 4.0
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1 — 4.5
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1 — 8.0
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1 — 10.0
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 10
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 2.0 12
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 0.5 8.0
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 100 400
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 100 400
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 40
Noise Figure NF dB
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MMBT3904WT1 — 5.0
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MMBT3906WT1 — 4.0
Delay Time (VCC = 3.0 Vdc, VBE = – 0.5 Vdc) MMBT3904WT1 td — 35
(VCC = –3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1 — 35
ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904WT1 tr — 35
(IC = –10 mAdc, IB1 = –1.0 mAdc) MMBT3906WT1 — 35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904WT1 ts — 200
(VCC = –3.0 Vdc, IC = –10 mAdc) MMBT3906WT1 — 225
ns
Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1 tf — 50
(IB1 = IB2 = –1.0 mAdc) MMBT3906WT1 — 75

MMBT3904WT1
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
275 275
10 k 10 k
0
– 0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
– 9.1 V
< 1 ns
TJ = 25°C
TJ = 125°C
10 5000
MMBT3904WT1 VCC = 40 V MMBT3904WT1
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MMBT3904WT1
500 500
300 IC/IB = 10 300 VCC = 40 V
IC/IB = 10
200 200
100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)
50 50
30 30
20 40 V 20
15 V
10 MMBT3904WT1 10
MMBT3904WT1
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
t′s = ts – 1/8 tf VCC = 40 V
300 300
IC/IB = 20 IC/IB = 10 IB1 = IB2 IB1 = IB2
200 200
IC/IB = 20

100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 10
MMBT3904WT1 MMBT3904WT1
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

12 14
10 IC = 1.0 mA 12

8
IC = 0.5 mA IC = 50 mA
8
6 IC = 100 mA
IC = 50 mA 6
4
4

IC = 100 mA MMBT3904WT1 MMBT3904WT1
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
Figure 9. Noise Figure Figure 10. Noise Figure

MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100

MMBT3904WT1 50 MMBT3904WT1
200
h fe , CURRENT GAIN
20
100 10
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 10
7.0
10 MMBT3904WT1 MMBT3904WT1
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

MMBT3904WT1

2.0
TJ = +125°C MMBT3904WT1 VCE = 1.0 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
MMBT3904WT1 TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0
TJ = 25°C MMBT3904WT1 MMBT3904WT1
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
0.8 0 – 55°C TO +25°C

VBE @ VCE =1.0 V
0.6 – 0.5
– 55°C TO +25°C
0.4 – 1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MMBT3906WT1
3V 3V
< 1 ns
+ 9.1 V
275 275
< 1 ns
10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*

+10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2%
TJ = 25°C
TJ = 125°C
10 5000
MMBT3906WT1 VCC = 40 V MMBT3906WT1
7.0 3000
IC/IB = 10
2000
QT
5.0
CAPACITANCE (pF)
Cobo
Q, CHARGE (pC)
1000
Cibo 700
3.0 500
300
2.0 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
IC/IB = 10 MMBT3906WT1 VCC = 40 V
300 MMBT3906WT1 300
IB1 = IB2
200 200
IC/IB = 20
100 100
70 70
tr @ VCC = 3.0 V
TIME (ns)
50 50
30 15 V 30 IC/IB = 10
20 20
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MMBT3906WT1

(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 12
IC = 1.0 mA 10
4.0

IC = 0.5 mA 8.0
3.0
IC = 50 mA 6.0
2.0
4.0 IC = 50 mA
IC = 100 mA
2.0
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
h PARAMETERS
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
70
50
200
hfe , CURRENT GAIN
30
100 20
70
10
50
7.0
30 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 10
10 7.0
7.0 5.0
h ie , INPUT IMPEDANCE (k Ω)
5.0
3.0
3.0
2.0
2.0
1.0
0.7 1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MMBT3906WT1
2.0
TJ = +125°C
VCE = 1.0 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
MMBT3906WT1
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
MMBT3906WT1 TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0

0.5
0.8 qVC FOR VCE(sat) +25°C TO +125°C
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)
0 – 55°C TO +25°C
0.6
MMBT3906WT1 –0.5 MMBT3906WT1

0.4 +25°C TO +125°C
–1.0
qVS FOR VBE(sat)
– 55°C TO +25°C
0.2 VCE(sat) @ IC/IB = 10 –1.5
0 –2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
General Purpose Transistor MMBT3906LT1

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT3906LT1 = 2A

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) –40 —
(IC = –10 mAdc, IE = 0) –40 —
(IE = –10 mAdc, IC = 0) –5.0 —
(VCE = –30 Vdc, VEB = –3.0 Vdc) — –50
(VCE = –30 Vdc, VEB = –3.0 Vdc) — –50
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
REV 1

MMBT3906LT1
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 80 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 300
(IC = –50 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 30 —
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.25
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.4
(IC = –10 mAdc, IB = –1.0 mAdc) –0.65 –0.85
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.95

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) — 4.5
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) — 10
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 2.0 12
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 100 400
Noise Figure NF dB
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) — 4.0
Delay Time ((VCC = –3.0 Vdc, VBE = 0.5 Vdc, td — 35
ns
Rise Time IC = –10 mAdc, IB1 = –1.0 mAdc) tr — 35
Storage Time ((VCC = –3.0 Vdc, IC = –10 mAdc, ts — 225
ns
Fall Time IB1 = IB2 = –1.0 mAdc) tf — 75

3V 3V
+9.1 V < 1 ns
275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2%

MMBT3906LT1
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0 Cobo
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
100 100
70 70
TIME (ns)
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MMBT3906LT1
5.0 12
IC = 1.0 mA
10
4.0

IC = 0.5 mA 8
3.0
IC = 50 mA 6
2.0
4 IC = 50 mA

IC = 100 mA 2
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
Figure 7. Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
70
50
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 10
7.0
10
7.0 5.0
5.0
3.0 3.0
2.0 2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MMBT3906LT1
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0

0.5 +25°C TO +125°C
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)
0
0.6 – 55°C TO +25°C
– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
– 1.5
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA

NPN Silicon
COLLECTOR
1
BASE
3
2
EMITTER 1
MAXIMUM RATINGS
2
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT4401LT1 = 2X

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 40 —
(IC = 0.1 mAdc, IE = 0) 60 —
(IE = 0.1 mAdc, IC = 0) 6.0 —
(VCE = 35 Vdc, VEB = 0.4 Vdc) — 0.1
Collector Cutoff Current ICEX µAdc
(VCE = 35 Vdc, VEB = 0.4 Vdc) — 0.1
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.

MMBT4401LT1
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 80 —
(IC = 150 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 500 mAdc, VCE = 2.0 Vdc) 40 —
(IC = 150 mAdc, IB = 15 mAdc) — 0.4
(IC = 500 mAdc, IB = 50 mAdc) — 0.75
(IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95
(IC = 500 mAdc, IB = 50 mAdc) — 1.2

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) — 6.5
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 30
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 1.0 15
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.1 8.0
Delay Time ((VCC = 30 Vdc, VEB = 2.0 Vdc, td — 15
ns
ns
+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200 Ω
200 Ω
0 0
1.0 kΩ –14 V 1.0 kΩ CS* < 10 pF
– 2.0 V CS* < 10 pF
< 2.0 ns < 20 ns
Scope rise time < 4.0 ns – 4.0 V


MMBT4401LT1
25°C 100°C
30 10
7.0
VCC = 30 V
20 5.0
IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)
QT
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
5.0 0.5
Ccb 0.3
3.0 0.2 QA
2.0 0.1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
100 100
70 IC/IB = 10 70 VCC = 30 V
tr IC/IB = 10
50 50
tr @ VCC = 30 V
30 30 tf
t, TIME (ns)
t, TIME (ns)
tr @ VCC = 10 V
td @ VEB = 2.0 V
20 td @ VEB = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
Figure 5. Turn–On Time Figure 6. Rise and Fall Times
300 100
ts′ = ts – 1/8 tf VCC = 30 V
70
IB1 = IB2 IB1 = IB2
200
IC/IB = 10 to 20 50 IC/IB = 20
30
100
20 IC/IB = 10
70
50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500

MMBT4401LT1
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
IC = 1.0 mA, RS = 150 Ω f = 1.0 kHz
IC = 500 µA, RS = 200 Ω RS = OPTIMUM
8.0 8.0
IC = 100 µA, RS = 2.0 kΩ RS = SOURCE IC = 50 µA

IC = 50 µA, RS = 4.0 kΩ RS = RESISTANCE IC = 100 µA
6.0 6.0 IC = 500 µA
IC = 1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from the MMBT4401LT1 lines, and the same units
hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly numbered curves
obtain these curves, a high–gain and a low–gain unit were on each graph.
300 50 k
MMBT4401LT1 UNIT 1
200 MMBT4401LT1 UNIT 2
20 k
hfe , CURRENT GAIN
10 k
100
MMBT4401LT1 UNIT 1 5.0 k
70
MMBT4401LT1 UNIT 2
50
2.0 k
30 1.0 k
20 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
10 100
7.0
5.0 50
MMBT4401LT1 UNIT 1
3.0 MMBT4401LT1 UNIT 2
20
2.0
10
0.7 5.0 MMBT4401LT1 UNIT 2
0.5
2.0
0.3
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MMBT4401LT1
3.0
VCE = 1.0 V
2.0 VCE = 10 V
TJ = 125°C
1.0
25°C
0.7
0.5 – 55°C
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 + 0.5
TJ = 25°C
0.8 0 qVC for VCE(sat)
VOLTAGE (VOLTS)
– 0.5
0.6 VBE @ VCE = 10 V
– 1.0
0.4
– 1.5
0.2 VCE(sat) @ IC/IB = 10 – 2.0 qVB for VBE
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT4403LT1 = 2T

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) –40 —
(IC = –0.1 mAdc, IE = 0) –40 —
(IE = –0.1 mAdc, IC = 0) –5.0 —
(VCE = –35 Vdc, VEB = –0.4 Vdc) — –0.1
Collector Cutoff Current ICEX µAdc
(VCE = –35 Vdc, VEB = –0.4 Vdc) — –0.1
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
2.0%.

MMBT4403LT1
ON CHARACTERISTICS
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 30 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 —
(IC = –150 mAdc, VCE = –2.0 Vdc)(3) 100 300
(IC = –500 mAdc, VCE = –2.0 Vdc)(3) 20 —
(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –0.75
(IC = –150 mAdc, IB = –15 mAdc) –0.75 –0.95
(IC = –500 mAdc, IB = –50 mAdc) — –1.3

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) — 8.5
(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) — 30
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 0.1 8.0
Delay Time ((VCC = –30 Vdc, VEB = –2.0 Vdc, td — 15
ns
Rise Time IC = –150 mAdc, IB1 = –15 mAdc) tr — 20
Storage Time ((VCC = –30 Vdc, IC = –150 mAdc, ts — 225
ns
Fall Time IB1 = IB2 = –15 mAdc) tf — 30
– 30 V – 30 V
200 Ω 200 Ω
< 2 ns < 20 ns
+2 V +14 V
0 0
1.0 kΩ 1.0 kΩ CS* < 10 pF
CS* < 10 pF
– 16 V –16 V
10 to 100 µs, 1.0 to 100 µs,
DUTY CYCLE = 2% DUTY CYCLE = 2% + 4.0 V

MMBT4403LT1
25°C 100°C
30 10
7.0
VCC = 30 V
20 5.0
Ceb IC/IB = 10
3.0
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
Ccb
5.0 0.5
QT
0.3
QA
0.2
2.0 0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500
100 100
70 IC/IB = 10 70 VCC = 30 V
50 IC/IB = 10
50
tr @ VCC = 30 V
30 tr @ VCC = 10 V 30
t, TIME (ns)
td @ VBE(off) = 2 V
20 td @ VBE(off) = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts – 1/8 tf
30
20
10 20 30 50 70 100 200 300 500

MMBT4403LT1
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
f = 1 kHz
8 8

IC = 1.0 mA, RS = 430 Ω
6 6 IC = 50 µA
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ 100 µA
IC = 100 µA, RS = 1.6 kΩ 500 µA
4 4
1.0 mA
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k

h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from the MMBT4403LT1 lines, and the same units
hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly–numbered curves
obtain these curves, a high–gain and a low–gain unit were on each graph.
1000 100 k
700 50 k MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
500
20 k
hfe , CURRENT GAIN
300 10 k
200 5k
2k
MMBT4403LT1 UNIT 1
100 MMBT4403LT1 UNIT 2 1k
70 500
50
200
30 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 500
MMBT4403LT1 UNIT 2
5.0 100
50
2.0
20
0.5
5.0
0.2 2.0
0.1 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MMBT4403LT1
3.0
VCE = 1.0 V
2.0 VCE = 10 V TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 0.5
TJ = 25°C
0
VOLTAGE (VOLTS)
0.5
1.0
0.4
1.5
0.2
2.0 qVS for VBE
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
Low Noise Transistor MMBT5087LT1

PNP Silicon
COLLECTOR
3
1
BASE 3
2 1
EMITTER 2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
DEVICE MARKING
MMBT5087LT1 = 2Q
TA = 25°C

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –100 µAdc, IE = 0)
(VCB = –10 Vdc, IE = 0) — –10
(VCB = –35 Vdc, IE = 0) — –50
1. FR–5 = 1.0 x 0.75 x 0.062 in.


MMBT5087LT1
ON CHARACTERISTICS
(IC = –100 µAdc, VCE = –5.0 Vdc) 250 800
(IC = –1.0 mAdc, VCE = –5.0 Vdc) 250 —
(IC = –10 mAdc, VCE = –5.0 Vdc) 250 —
Collector–Emitter Saturation Voltage VCE(sat) — –0.3 Vdc
(IC = –10 mAdc, IB = –1.0 mAdc)
Base–Emitter Saturation Voltage VBE(sat) — 0.85 Vdc
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
Noise Figure NF dB
(IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) — 2.0
(IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) — 2.0

MMBT5087LT1
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

MMBT5087LT1

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MMBT5087LT1
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 16
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

MMBT5087LT1
VCC = 30 V
ICBO
AND Example:
100
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
10–1 r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

MOTOROLA
Low Noise Transistors MMBT5088LT1

NPN Silicon COLLECTOR MMBT5089LT1*
3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol 5088LT1 5089LT1 Unit 2
Collector – Base Voltage VCBO 35 30 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBT5088 30 —
MMBT5089 25 —
(IC = 100 mAdc, IE = 0) MMBT5088 35 —
MMBT5089 30 —
(VCB = 20 Vdc, IE = 0) MMBT5088 — 50
(VCB = 15 Vdc, IE = 0) MMBT5089 — 50
(VEB(off) = 3.0 Vdc, IC = 0) MMBT5088 — 50
(VEB(off) = 4.5 Vdc, IC = 0) MMBT5089 — 100
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT5088LT1 MMBT5089LT1
ON CHARACTERISTICS
(IC = 100 µAdc, VCE = 5.0 Vdc) MMBT5088 300 900
MMBT5089 400 1200
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088 350 —

MMBT5089 450 —
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088 300 —

MMBT5089 400 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.5
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.8

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) 50 —
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) — 4.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) — 10
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088 350 1400
MMBT5089 450 1800
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) MMBT5088 — 3.0
MMBT5089 — 2.0
RS
in
en
IDEAL
TRANSISTOR

(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
100 Hz NOISE DATA

300 20
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4

TJ = 25°C
0.8 – 0.8
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA
High Voltage Transistor MMBT5401LT1

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
1
2

MAXIMUM RATINGS
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT5401LT1 = 2L

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) –150 —
(IC = –100 mAdc, IE = 0) –160 —
(IE = –10 mAdc, IC = 0) –5.0 —
(VCB = –120 Vdc, IE = 0) — –50 nAdc
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT5401LT1
ON CHARACTERISTICS
(IC = –1.0 mAdc, VCE = –5.0 Vdc) 50 —
(IC = –10 mAdc, VCE = –5.0 Vdc) 60 240
(IC = –50 mAdc, VCE = –5.0 Vdc) 50 —
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.2
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.5
(IC = –10 mAdc, IB = –1.0 mAdc) — –1.0
(IC = –50 mAdc, IB = –5.0 mAdc) — –1.0

(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz) 100 300
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) — 6.0
Noise Figure NF dB
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz) — 8.0

MMBT5401LT1
200
150
TJ = 125°C
h FE, CURRENT GAIN
100
25°C
70
50
– 55°C
30 VCE = – 1.0 V
VCE = – 5.0 V
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
103
VCE = 30 V
102
IC = ICES
101
TJ = 125°C
100
75°C
10–1
REVERSE FORWARD
10–2 25°C
10–3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

MMBT5401LT1
1.0 2.5
TJ = 25°C TJ = – 55°C to 135°C

0.9 2.0
V, VOLTAGE (VOLTS) 0.8 1.5
0.7 1.0
0.6 0.5
θVC for VCE(sat)
0.5 0
0.4 –0.5
0.3 –1.0
0.2 VCE(sat) @ IC/IB = 10 –1.5
θVB for VBE(sat)
0.1 –2.0
0 –2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
VBB VCC 50
+ 8.8 V –30 V
30
C, CAPACITANCE (pF)
10.2 V
20 Cibo
100 3.0 k RC
Vin
Vout 10
10 µs 0.25 µF RB 7.0
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914 3.0
1.0
1000 2000
700 IC/IB = 10
TJ = 25°C tr @ VCC = 120 V 1000
500 IC/IB = 10 tf @ VCC = 120 V
700 TJ = 25°C
300
tr @ VCC = 30 V 500
200
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
300
100 200
70 ts @ VCC = 120 V
50 100
70
30
50
20 td @ VBE(off) = 1.0 V
VCC = 120 V 30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
High Voltage Transistors MMBT5550LT1

NPN Silicon COLLECTOR MMBT5551LT1*
3
1
BASE
2 3
MAXIMUM RATINGS EMITTER

2
Emitter – Base Voltage VEBO 6.0 Vdc SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBT5550 140 —
MMBT5551 160 —
(IC = 100 mAdc, IE = 0) MMBT5550 160 —
MMBT5551 180 —
(IE = 10 mAdc, IC = 0) 6.0 —
(VCB = 100 Vdc, IE = 0) MMBT5550 — 100 nAdc
(VCB = 120 Vdc, IE = 0) MMBT5551 — 50
(VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550 — 100 µAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551 — 50
(VEB = 4.0 Vdc, IC = 0) — 50
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.

ON CHARACTERISTICS
MMBT5551 80 —
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550 60 250

MMBT5551 80 250

MMBT5551 30 —
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 — 0.25

MMBT5551 — 0.20
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 — 1.2

MMBT5551 — 1.0

500
300 VCE = 1.0 V
TJ = 125°C
200 VCE = 5.0 V
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
101 1.0
TJ = 25°C
VCE = 30 V
100
0.8
V, VOLTAGE (VOLTS)
10–1 TJ = 125°C VBE(sat) @ IC/IB = 10

IC = ICES 0.6
10–2 75°C
0.4
25°C 0.2
10–4
10–5 0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE, BASE–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages

2.5

2.0 TJ = – 55°C to +135°C
1.5
1.0 VBB VCC
10.2 V
0.5 qVC for VCE(sat) – 8.8 V 30 V
Vin
0 100 3.0 k RC
– 0.5 10 µs 0.25 µF RB
INPUT PULSE Vout
– 1.0
qVB for VBE(sat) 5.1 k
– 1.5 tr, tf ≤ 10 ns Vin 100 1N914
– 2.0 DUTY CYCLE = 1.0%
– 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
Values Shown are for IC @ 10 mA
Figure 5. Temperature Coefficients Figure 6. Switching Time Test Circuit
100 1000
70 TJ = 25°C IC/IB = 10
50 500 TJ = 25°C
30 300 tr @ VCC = 120 V

C, CAPACITANCE (pF)
20 200
tr @ VCC = 30 V
t, TIME (ns)
10 100
7.0 Cibo
5.0 50 td @ VEB(off) = 1.0 V
3.0 Cobo 30 VCC = 120 V

2.0 20
1.0 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
Figure 7. Capacitances Figure 8. Turn–On Time
5000
tf @ VCC = 120 V IC/IB = 10
3000
TJ = 25°C
2000
tf @ VCC = 30 V
1000
t, TIME (ns)
500
300 ts @ VCC = 120 V

200
100
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
Darlington Transistor MMBT6427LT1

NPN Silicon
COLLECTOR 3
BASE
1
3
EMITTER 2
1
MAXIMUM RATINGS
2
SOT– 23 (TO – 236AB)
TA = 25°C
DEVICE MARKING
MMBT6427LT1 = 1V

OFF CHARACTERISTICS
(IC = 10 mAdc, VBE = 0) 40 —
(IC = 100 mAdc, IE = 0) 40 —
(IC = 10 mAdc, IC = 0) 12 —
(VCE = 25 Vdc, IB = 0) — 1.0
(VCB = 30 Vdc, IE = 0) — 50
(VEB = 10 Vdc, IC = 0) — 50
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT6427LT1
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 5.0 Vdc) 10,000 100,000
(IC = 100 mAdc, VCE = 5.0 Vdc) 20,000 200,000
(IC = 500 mAdc, VCE = 5.0 Vdc) 14,000 140,000
Collector – Emitter Saturation Voltage VCE(sat)(3) Vdc
(IC = 50 mAdc, IB = 0.5 mAdc) — 1.2
(IC = 500 mAdc, IB = 0.5 mAdc) — 1.5
(IC = 500 mAdc, IB = 0.5 mAdc) — 2.0
(IC = 50 mAdc, VCE = 5.0 Vdc) — 1.75

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 7.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 15
Current Gain — High Frequency |hfe| Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1.3 —
Noise Figure NF dB
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) — 10
RS
in
en
IDEAL
TRANSISTOR

MMBT6427LT1
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

MMBT6427LT1
20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

MMBT6427LT1
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
FIGURE A
tP
PP PP
t1
1/f
DUTY CYCLE + t1 f + ttP1

PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data

MOTOROLA
Amplifier Transistors MMBT6428LT1

3
MMBT6429LT1
1
BASE
2 3
EMITTER
1
2
MAXIMUM RATINGS
Rating Symbol 6428LT1 6429LT1 Unit
Collector – Emitter Voltage VCEO 50 45 Vdc SOT– 23 (TO – 236AB)

TA = 25°C
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBT6428 50 —
(IC = 1.0 mAdc, IB = 0) MMBT6429 45 —
(IC = 0.1 mAdc, IE = 0) MMBT6428 60 —
(IC = 0.1 mAdc, IE = 0) MMBT6429 55 —
(VCE = 30 Vdc) — 0.1
(VCB = 30 Vdc, IE = 0) — 0.01
(VEB = 5.0 Vdc, IC = 0) — 0.01
1. FR– 5 = 1.0 0.062 in.
0.75
0.3

ON CHARACTERISTICS
MMBT6429 500 —
(IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428 250 650

MMBT6429 500 1250

MMBT6429 500 —

MMBT6429 500 —
(IC = 10 mAdc, IB = 0.5 mAdc) — 0.2
(IC = 100 mAdc, IB = 5.0 mAdc) — 0.6
(IC = 1.0 mAdc, VCE = 5.0 mAdc) 0.56 0.66

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 100 700
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) — 3.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 8.0
RS
in
en
IDEAL
TRANSISTOR

(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
100 Hz NOISE DATA

300 20
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4

TJ = 25°C
0.8 – 0.8
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA

NPN Silicon
COLLECTOR
3
1
BASE
3
2
EMITTER 1
MAXIMUM RATINGS
2
SOT– 23 (TO – 236AB)
Base Current IB 250 mAdc
TA = 25°C
DEVICE MARKING
MMBT6517LT1 = 1Z

OFF CHARACTERISTICS
(IC = 1.0 mAdc) 350 —
(IC = 100 mAdc) 350 —
(IE = 10 mAdc) 6.0 —
(VCB = 250 Vdc) — 50
(VEB = 5.0 Vdc) — 50
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

MMBT6517LT1
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 20 —
(IC = 10 mAdc, VCE = 10 Vdc) 30 —
(IC = 30 mAdc, VCE = 10 Vdc) 30 200
(IC = 50 mAdc, VCE = 10 Vdc) 20 200
(IC = 100 mAdc, VCE = 10 Vdc) 15 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.30
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.35
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.50
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.0
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.75
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.85
(IC = 30 mAdc, IB = 3.0 mAdc) — 0.90
(IC = 100 mAdc, VCE = 10 Vdc) — 2.0

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) 40 200
(VCB = 20 Vdc, f = 1.0 MHz) — 6.0
(VEB = 0.5 Vdc, f = 1.0 MHz) — 80

MMBT6517LT1

200 100
VCE = 10 V TJ = 125°C
70
100
25°C 50
70
50 TJ = 25°C
30 VCE = 20 V
– 55°C
30 f = 20 MHz
20
20
10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.4 2.5

1.2
TJ = 25°C
2.0
IC
IB
+ 10
1.5
1.0
V, VOLTAGE (VOLTS)
1.0 25°C to 125°C
0.8 VBE(sat) @ IC/IB = 10 0.5

RθVC for VCE(sat)
0
0.6 – 55°C to 25°C
VBE(on) @ VCE = 10 V – 0.5
0.4 – 1.0
– 55°C to 125°C
– 1.5
0.2 VCE(sat) @ IC/IB = 10 RθVB for VBE
– 2.0
VCE(sat) @ IC/IB = 5.0
0 – 2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
100
70 TJ = 25°C
50
Ceb
30
C, CAPACITANCE (pF)
20
10
7.0
5.0 Ccb
3.0
2.0
1.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

MMBT6517LT1
1.0 k 10 k
700 7.0 k
VCE(off) = 100 V
500 5.0 k ts
td @ VBE(off) = 2.0 V IC/IB = 5.0
300 TJ = 25°C 3.0 k
200 2.0 k
t, TIME (ns)
t, TIME (ns)
tr VCE(off) = 100 V
100 1.0 k tf IC/IB = 5.0
70 700 IB1 = IB2
50 500 TJ = 25°C
30 300
20 200
10 100
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
+VCC
VCC ADJUSTED 2.2 k

1.0 k
50
–9.2 V 1/2MSD7000

1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03
0.02
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

MMBT6517LT1
FIGURE A
tP
PP PP
t1
1/f


MOTOROLA

PNP Silicon
COLLECTOR
1
BASE
3
2
EMITTER 1
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Base Current IB –250 mA
DEVICE MARKING
MMBT6520LT1 = 2Z
TA = 25°C
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mA) V(BR)CEO –350 — Vdc
Collector–Base Breakdown Voltage (IC = –100 µA) V(BR)CBO –350 — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µA) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current (VCB = –250 V) ICBO — –50 nA
Emitter Cutoff Current (VEB = –4.0 V) IEBO — –50 nA
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MMBT6520LT1
ON CHARACTERISTICS
(IC = –1.0 mA, VCE = –10 V) 20 —
(IC = –10 mA, VCE = –10 V) 30 —
(IC = –30 mA, VCE = –10 V) 30 200
(IC = –50 mA, VCE = –10 V) 20 200
(IC = –100 mA, VCE = –10 V) 15 —
(IC = –10 mA, IB = –1.0 mA) — –0.30
(IC = –20 mA, IB = –2.0 mA) — –0.35
(IC = –30 mA, IB = –3.0 mA) — –0.50
(IC = –50 mA, IB = –5.0 mA) — –1.0
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = –10 mA, IB = –1.0 mA) — –0.75
(IC = –20 mA, IB = –2.0 mA) — –0.85
(IC = –30 mA, IB = –3.0 mA) — –0.90
Base–Emitter On Voltage VBE(on) — –2.0 Vdc
(IC = –100 mA, VCE = –10 V)
Current–Gain — Bandwidth Product fT 40 200 MHz
(IC = –10 mA, VCE = –20 V, f = 20 MHz)
(VCB= –20 V, f = 1.0 MHz)
(VEB= –0.5 V, f = 1.0 MHz)

MMBT6520LT1

200 100
VCE = 10 V TJ = 125°C
70
100 25°C 50
70 TJ = 25°C
– 55°C 30 VCE = 20 V
50 f = 20 MHz
20
30
20 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 1. DC Current Gain Figure 2. Current–Gain — Bandwidth Product
1.4 2.5

1.2
TJ = 25°C
2.0
IC
IB
+ 10
1.5
1.0
V, VOLTAGE (VOLTS)
1.0 25°C to 125°C

0.8 VBE(sat) @ IC/IB = 10 0.5
RθVC for VCE(sat)
0
0.6 – 55°C to 25°C
VBE(on) @ VCE = 10 V – 0.5
0.4 – 1.0
– 55°C to 125°C
0.2 – 1.5
VCE(sat) @ IC/IB = 10 RθVB for VBE
– 2.0
0 – 2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
100 1.0 k
70 700
TJ = 25°C VCE(off) = 100 V
50 500 IC/IB = 5.0
Ceb td @ VBE(off) = 2.0 V
30 300 TJ = 25°C
C, CAPACITANCE (pF)
20 200
t, TIME (ns)
tr
10 100
7.0 70
5.0 Ccb 50
3.0 30
2.0 20
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 5. Capacitance Figure 6. Turn–On Time

MMBT6520LT1
10 k
7.0 k
5.0 k ts
3.0 k
2.0 k
t, TIME (ns)
VCE(off) = 100 V
1.0 k tf IC/IB = 5.0
700 IB1 = IB2
500 TJ = 25°C
300
200
100
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
+VCC
VCC ADJUSTED 2.2 k

1.0 k
50
–9.2 V 1/2MSD7000

1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.05 SINGLE PULSE
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03
0.02
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

MMBT6520LT1
FIGURE A
tP
PP PP
t1
1/f


MOTOROLA
Driver Transistors MMBTA05LT1

NPN Silicon MMBTA06LT1*
COLLECTOR
3
1
BASE
3
2
EMITTER 1
2
MAXIMUM RATINGS
Rating Symbol MMBTA05 MMBTA06 Unit
Collector – Emitter Voltage VCEO 60 80 Vdc SOT– 23 (TO – 236AB)

TA = 25°C
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBTA05 60 —
MMBTA06 80 —
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICES — 0.1 mAdc
(VCE = 60 Vdc, IB = 0)
(VCB = 60 Vdc, IE = 0) MMBTA05 — 0.1
(VCB = 80 Vdc, IE = 0) MMBTA06 — 0.1
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
2.0%.

MMBTA05LT1 MMBTA06LT1
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 —

Current – Gain — Bandwidth Product(4) fT 100 — MHz
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

MOTOROLA
Darlington Amplifier Transistors MMBTA13LT1

NPN Silicon MMBTA14LT1*
COLLECTOR 3
BASE
1
3
1
EMITTER 2
2

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
TA = 25°C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

OFF CHARACTERISTICS
(IC = 100 mAdc, VBE = 0)
(VCB = 30 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)
1. FR– 5 = 1.0
0.75 0.062 in.
0.3

(IC = 10 mAdc, VCE = 5.0 Vdc) MMBTA13 5000 —
MMBTA14 10,000 —
(IC = 100 mAdc, VCE = 5.0 Vdc) MMBTA13 10,000 —

MMBTA14 20,000 —
Base – Emitter On Voltage VBE — 2.0 Vdc


RS
in
en
IDEAL
TRANSISTOR

(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40

MOTOROLA
General Purpose Amplifier MMBTA20LT1

NPN Silicon
COLLECTOR
3
1 3
BASE
1
2 2
EMITTER

SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
TA = 25°C
DEVICE MARKING
MMBTA20LT1 = 1C

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IE = 100 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
1. FR– 5 = 1.0 0.062 in.

0.75
0.3

MMBTA20LT1
ON CHARACTERISTICS
DC Current Gain hFE 40 400 —
(IC = 5.0 mAdc, VCE = 10 Vdc)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

MMBTA20LT1
(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

MMBTA20LT1
400
200 25°C
– 55°C
100
80
MPS390
60 VCE
4 = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
MPS3904 TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MMBTA20LT1
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

MPS3904
TA = 25°C TA = 25°C
7.0 hfe ≈ 200 @ IC = 1.0 mA 70
5.0 50 MPS3904
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MMBTA20LT1
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA
High Voltage Transistors MMBTA42LT1*

NPN Silicon
COLLECTOR
MMBTA43LT1
3
1
BASE
2 3
Rating Symbol MMBTA42 MMBTA43 Unit 1

2
Emitter – Base Voltage VEBO 6.0 6.0 Vdc SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
Total Device Dissipation FR–5 Board,(1) PD 225 mW
TA = 25°C
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MMBTA42 300 —
MMBTA43 200 —
(IC = 100 mAdc, IE = 0) MMBTA42 300 —
MMBTA43 200 —
(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0) MMBTA42 — 0.1
(VCB = 160 Vdc, IE = 0) MMBTA43 — 0.1
(VEB = 6.0 Vdc, IC = 0) MMBTA42 — 0.1
(VEB = 4.0 Vdc, IC = 0) MMBTA43 — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.

(IC = 1.0 mAdc, VCE = 10 Vdc) Both Types 25 —
(IC = 10 mAdc, VCE = 10 Vdc) Both Types 40 —
(IC = 30 mAdc, VCE = 10 Vdc) MMBTA42 40 —

MMBTA43 40 —
(IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42 — 0.5
MMBTA43 — 0.5

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42 — 3.0
MMBTA43 — 4.0

200
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

100 100
50 70
C, CAPACITANCE (pF)
Ceb 50
20
TJ = 25°C
10 VCE = 20 V
30 f = 20 MHz
5.0
20
2.0 Ccb
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.4
TJ = 25°C
1.2
1.0
V, VOLTAGE (VOLTS)
0.6 VBE(on) @ VCE = 10 V
0.4
5.0
0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA
Driver Transistors MMBTA55LT1

COLLECTOR
PNP Silicon 3 MMBTA56LT1*
BASE
2
3
Rating Symbol MMBTA55 MMBTA56 Unit
Collector – Emitter Voltage VCEO –60 –80 Vdc 1
2
Collector Current — Continuous IC –500 mAdc SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
TA = 25°C
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) MMBTA55 V(BR)CEO –60 — Vdc
(IC = –1.0 mAdc, IB = 0) MMBTA56 –80 —
Collector Cutoff Current (VCE = –60 Vdc, IB = 0) ICES — –0.1 µAdc
Collector Cutoff Current (VCB = –60 Vdc, IE = 0) MMBTA55 ICBO — –0.1 µAdc
Collector Cutoff Current (VCB = –80 Vdc, IE = 0) MMBTA56 — –0.1
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) hFE 100 — —
DC Current Gain (IC = –100 mAdc, VCE = –1.0 Vdc) 100 —
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) VCE(sat) — –0.25 Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc) VBE(on) — –1.2 Vdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.


MOTOROLA
Darlington Transistors MMBTA63LT1

PNP Silicon
COLLECTOR 3 MMBTA64LT1*
BASE *Motorola Preferred Device
1
EMITTER 2
3
MAXIMUM RATINGS
2
Collector – Emitter Voltage VCES –30 Vdc
Emitter – Base Voltage VEBO –10 Vdc SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
TA = 25°C
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc) V(BR)CEO –30 — Vdc
Collector Cutoff Current (VCB = –30 Vdc) ICBO — –100 nAdc
Emitter Cutoff Current (VEB = –10 Vdc) IEBO — –100 nAdc
ON CHARACTERISTICS
(IC = –10 mAdc, VCE = –5.0 Vdc) MMBTA63 5,000 —
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc) VCE(sat) — –1.5 Vdc
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc) VBE(on) — –2.0 Vdc
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT 125 — MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.

200
TA = 125°C
100
hFE , DC CURRENT GAIN (X1.0 K) 70
50
–10 V
30 25°C
VCE = –2.0 V
20
–5.0 V
10
7.0
5.0 –55°C
3.0
2.0
–0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300

–2.0 –2.0
TA = 25°C
TA = 25°C
–1.8
–1.6 VBE(sat) @ IC/IB = 100
–1.6
V, VOLTAGE (VOLTS)
IC = –10 mA –50 mA –100 mA –175 mA –300 mA

–1.2
–1.4
–0.8 VCE(sat) @ IC/IB = 1000 –1.2
IC/IB = 100
–1.0
–0.4
–0.8
0 –0.6
–0.3 –0.5 –1.0 –2 –3 –5 –10 –20 –30 –50 –100 –200 –300 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
Figure 2. “On” Voltage Figure 3. Collector Saturation Region
10
VCE = –5.0 V
4.0 f = 100 MHz
3.0 TA = 25°C
2.0
1.0
0.4
0.2
0.1
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1K
Figure 4. High Frequency Current Gain

MOTOROLA
General Purpose Transistor MMBTA70LT1

COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
2
Emitter–Base Voltage VEBO –4.0 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA70LT1 = M2C
Total Device Dissipation FR-5 Board,(1) PD 225 mW
TA = 25°C
OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current ICBO — –100 nAdc
(VCB = –30 Vdc, IE = 0)
ON CHARACTERISTICS
(IC = –5.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
Current–Gain – Bandwidth Product fT 125 — MHz
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MMBTA70LT1
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

MMBTA70LT1
400
TJ = 125°C
25°C
200
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
350 µA
0.8 IC, COLLECTOR CURRENT (mA) 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MMBTA70LT1
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
C, CAPACITANCE (pF) 5.0
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

TA = 25°C TA = 25°C
7.0 hfe ≈ 200 70
5.0 @ IC = –1.0 mA 50
3.0 30 hfe ≈ 200
@ IC = 1.0 mA
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MMBTA70LT1
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 V
103
ICBO
AND Example:
100
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
10–1 r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

MOTOROLA
High Voltage Transistors MMBTA92LT1*

COLLECTOR
PNP Silicon 3 MMBTA93LT1
1
BASE
2
EMITTER
3
MAXIMUM RATINGS
Rating Symbol MMBTA92 MMBTA93 Unit 1
2
Emitter – Base Voltage VEBO –5.0 –5.0 Vdc SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
TA = 25°C

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) MMBTA92 –300 —
MMBTA93 –200 —
(IC = –100 mAdc, IE = 0) MMBTA92 –300 —
MMBTA93 –200 —
(IE = –100 mAdc, IC = 0)
(VCB = –200 Vdc, IE = 0) MMBTA92 — –0.25
(VCB = –160 Vdc, IE = 0) MMBTA93 — –0.25
Emitter Cutoff Current IEBO — –0.1 µAdc
(VEB = –3.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.


(IC = –1.0 mAdc, VCE = –10 Vdc) Both Types 25 —
(IC = –10 mAdc, VCE = –10 Vdc) Both Types 40 —
(IC = –30 mAdc, VCE = –10 Vdc) MMBTA92 25 —

MMBTA93 25 —
(IC = –20 mAdc, IB = –2.0 mAdc) MMBTA92 — –0.5
MMBTA93 — –0.5
Base–Emitter Saturation Voltage VBE(sat) — –0.9 Vdc
(IC = –20 mAdc, IB = –2.0 mAdc)

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz) MMBTA92 — 6.0
MMBTA93 — 8.0

150
TJ = +125°C
VCE = –10 Vdc
100
hFE, DC CURRENT GAIN +25°C
70
50 –55°C
30
20
15
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

100 100
80 TJ = 25°C
50 VCE = –20 Vdc
Cib 60
C, CAPACITANCE (pF)
20
40
10 30
5.0
20
2.0
Ccb
1.0 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0
–0.8
VBE @ VCE = –10 V
V, VOLTAGE (VOLTS)
–0.6
–0.4
–0.2
VCE(sat) @ IC/IB = 10 mA
0
–1.0 –2.0 –5.0 –10 –20 –50 –100

MOTOROLA
VHF/UHF Transistor MMBTH10LT1
NPN Silicon COLLECTOR Motorola Preferred Device

3
1
BASE
3
2 1
EMITTER
2
CASE 318-08, STYLE 6

SOT-23 (TO-236AB)
MAXIMUM RATINGS
DEVICE MARKING
MMBTH10LT1 = 3EM
TA = 25°C

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 — — Vdc
Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO — — 100 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MMBTH10LT1
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) hFE 60 — — —
Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) — — 0.5 Vdc
Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE — — 0.95 Vdc
Current–Gain – Bandwidth Product fT 650 — — MHz
Collector–Base Capacitance Ccb — — 0.7 pF

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common–Base Feedback Capacitance Crb — — 0.65 pF

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant rb′Cc — — 9.0 ps

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

MMBTH10LT1
COMMON–BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
80 0
70 gib
y ib , INPUT ADMITTANCE (mmhos)
– 10
60
– 20
50
jb ib (mmhos)
– bib 1000 MHz
40 – 30
30 700
– 40
20 400 200 100
– 50
10
0 – 60
100 200 300 400 500 700 1000 0 10 20 30 40 50 60 70 80
f, FREQUENCY (MHz) gib (mmhos)
Figure 1. Rectangular Form Figure 2. Polar Form
yfb, FORWARD TRANSFER ADMITTANCE

y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
70 60
bfb 400
60 200
50 50 600
100
40
700
– gfb
jb fb (mmhos)
30 40
20
10 30
1000 MHz
0
– 10 20
– 20
– 30 10
100 200 300 400 500 700 1000 70 60 50 40 30 20 10 0 – 10 – 20 – 30
f, FREQUENCY (MHz) gfb (mmhos)

MMBTH10LT1
COMMON–BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
5.0 0
100
4.0 – 1.0 200
MPS H11
jb rb (mmhos)
3.0 – 2.0 400
–brb
2.0 –brb
– 3.0
700
MPS H10
1.0 – 4.0
–grb 1000 MHz
0 – 5.0
100 200 300 400 500 700 1000 –2.0 –1.8 –1.2 –0.8 –0.4 0 0.4 0.8 1.2 1.6 2.0
f, FREQUENCY (MHz) grb (mmhos)
yob, OUTPUT ADMITTANCE

10 10
1000 MHz
9.0
yob, OUTPUT ADMITTANCE (mmhos)
8.0 8.0
7.0 700
jb ob(mmhos)
6.0 6.0
5.0 bob
4.0 4.0 400
3.0
200
2.0 2.0
gob
1.0 100
0 0
100 200 300 400 500 700 1000 0 2.0 4.0 6.0 8.0 10
f, FREQUENCY (MHz) gob (mmhos)

MOTOROLA
VHF Mixer Transistor MMBTH24LT1

NPN Silicon COLLECTOR Motorola Preferred Device
3
• Designed for
• fT = 400 MHz Min @ 8 mA 1
BASE
3
2 1
EMITTER
2
CASE 318-08, STYLE 6

SOT-23 (TO-236AB)
MAXIMUM RATINGS
Collector Current – Continuous IC 50 mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
TA = 25°C

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 30 — — Vdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MMBTH24LT1
ON CHARACTERISTICS
DC Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc) hFE 30 — — —
Current–Gain – Bandwidth Product(3) fT 400 620 — MHz
Collector–Base Capacitance Ccb — 0.25 0.45 pF

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Conversion Gain — — — — dB
(213 MHz to 45 MHz)
(IC= 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) 19 24 —
(60 MHz to 45 MHz) CG
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) 24 20 —

MOTOROLA
UHF/VHF Transistor
COLLECTOR MMBTH69LT1
PNP Silicon 3
• Designed for UHF/VHF Amplifier Applications
1
• High Current Gain Bandwidth Product BASE
fT = 2000 MHz Min @ 10 mA
2
3
EMITTER
MAXIMUM RATINGS
1
2
Collector–Base Voltage VCBO –15 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTH69LT1 = M3J
TA = 25°C

OFF CHARACTERISTICS
Collector Cutoff Current (VCB = –10 Vdc, IE = 0) ICBO — — –100 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc) hFE 30 — 300 —
Collector–Base Capacitance Crb — — 0.35 pF

(VCE = –10 Vdc, IE = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.


MOTOROLA
UHF/VHF Transistor
MMBTH81LT1
COLLECTOR
PNP Silicon 3
1
BASE
2 3
EMITTER
MAXIMUM RATINGS
1
2
Collector–Base Voltage VCBO –20 Vdc CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTH81LT1 = 3D
Total Device Dissipation FR-5 Board,(1) PD 225 mW
TA = 25°C
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = –10 Vdc, IE = 0) ICBO — — –100 nAdc
Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0) IEBO — — –100 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) hFE 60 — — —
Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc) VCE(sat) — — –0.5 Vdc
Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc) VBE(on) — — –0.9 Vdc
Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Ccb — — 0.85 pF
Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz) Cce — — 0.65 pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.

MOTOROLA
Quad General Purpose

Transistors MMPQ2222
NPN Silicon 1 16 MMPQ2222A*
2 15
3 14 *Motorola Preferred Device
4 13
5 12
6 11
7 10
8 9
16
MAXIMUM RATINGS 1
Rating Symbol MMPQ2222 MMPQ2222A Unit
CASE 751B–05, STYLE 4
SO–16
Collector – Base Voltage VCB 60 75 Vdc
Emitter – Base Voltage VEB 5.0 Vdc
Four
Each Transistors
Transistor Equal Power
Total Power Dissipation PD Watts
@ TA = 25°C 0.52 1.0
Derate above 25°C 4.2 8.0 mW/°C
@ TC = 25°C 0.8 2.4
Operating and Storage TJ, Tstg –55 to +150 °C
Junction Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) MMPQ2222 V(BR)CEO 30 — — Vdc
(IC = 10 mAdc, IB = 0) MMPQ2222A 40 — —
Collector – Base Breakdown Voltage MMPQ2222 V(BR)CBO 60 — — Vdc
(IC = 10 mAdc, IE = 0) MMPQ2222A 75 — —
(IB = 10 mAdc, IC = 0) — — —
(VCB = 50 Vdc, IE = 0) MMPQ2222 — — 50
(VCB = 60 Vdc, IE = 0) MMPQ2222A — — 10
(VEB = 3.0 Vdc, IC = 0)
REV 1

MMPQ2222 MMPQ2222A
ON CHARACTERISTICS
(IC = 100 mA, VCE = 10 V) MMPQ2222A 35 — —
(IC = 1.0 mA, VCE = 10 V) MMPQ2222A 50 — —
(IC = 10 mA, VCE = 10 V) MMPQ2222 75 — —
MMPQ2222A 75 — —
(IC = 150 mA, VCE = 10 V) MMPQ2222 100 — —
MMPQ2222A 100 — 300
(IC = 300 mA, VCE = 10 V) MMPQ2222 30 — —
(IC = 500 mA, VCE = 10 V) MMPQ2222A 40 — —
(IC = 150 mA, VCE = 1.0 V) MMPQ2222A 50 — —
(IC = 150 mAdc, IB = 15 mAdc) MMPQ2222 — — 0.4
MMPQ2222A — — 0.3
(IC = 500 mAdc, IB = 50 mAdc) MMPQ2222A — — 1.0
MMPQ2222A — — 1.2
(IC = 500 mAdc, IB = 50 mAdc) MMPQ2222A — — 2.0
Current – Gain — Bandwidth Product(1) fT 200 350 — MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time ton — 25 — ns
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
Turn–Off Time toff — 250 — ns
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)

MOTOROLA
Quad Switching
Transistor MMPQ2369
NPN Silicon 1
2
16
15
3 14
4 13
5 12
6 11
7 10
8 9
16

SO–16
MAXIMUM RATINGS
Collector – Base Voltage VCB 40 Vdc
Four
Each Transistors
@ TA = 25°C 0.4 0.72
@ TC = 25°C 0.66 1.92

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO — — 0.4 mAdc
(VCB = 20 Vdc, IE = 0)

MMPQ2369
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1.0 Vdc) 40 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) 20 — —
Current – Gain — Bandwidth Product fT 450 550 — MHz
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time ton — 9.0 — ns
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)

MOTOROLA
Quad General Purpose

Transistors MMPQ2907
PNP Silicon MMPQ2907A
1 16
2 15
3 14
4 13
5 12
6 11
7 10
16
8 9

MAXIMUM RATINGS SO–16
Rating Symbol MMPQ2907 MMPQ2907A Unit

Collector – Base Voltage VCB –60 Vdc
Emitter – Base Voltage VEB –5.0 Vdc
Four
Each Transistors
Total Power Dissipation @ TA = 25°C PD 0.52 1.0 Watts
Total Power Dissipation @ TC = 25°C PD 0.8 2.4 Watts
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) MMPQ2907 V(BR)CEO –40 — — Vdc
(IC = –10 mAdc, IB = 0) MMPQ2907A –60 — —
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0) MMPQ2907 — — –50
(VCB = –50 Vdc, IE = 0) MMPQ2907A — — –10
(VEB = –3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
REV 1

MMPQ2907 MMPQ2907A
ON CHARACTERISTICS
(IC = –100 µAdc, VCE = –10 Vdc) MMPQ2907A 75 — —
(IC = –1.0 mAdc, VCE = –10 Vdc) MMPQ2907A 100 — —
(IC = –10 mAdc, VCE = –10 Vdc) MMPQ2907/2907A 75/100 — —
(IC = –150 mAdc, VCE = –10 Vdc) MMPQ2907/2907A 100 — 300
(IC = –300 mAdc, VCE = –10 Vdc) MMPQ2907/2907A 30/50 — —
(IC = –500 mAdc, VCE = –10 Vdc) MMPQ2907/2907A 50 — —

(IC = –150 mAdc, IB = –15 mAdc) MMPQ2907 — — –0.4
(IC = –500 mAdc, IB = –50 mAdc) MMPQ2907A — — –2.6
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc)
(VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc)

MOTOROLA
Quad Memory Driver

Transistor MMPQ3467
PNP Silicon 1
2
16
15
3 14
4 13
5 12
6 11
7 10
8 9
16


Four
Each Transistors
Power Dissipation @ TA = 25°C PD 0.52 1.2 Watts
Power Dissipation @ TC = 25°C PD 1.0 2.5 Watts
Derate above 25°C 8.0 20 mW/°C
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)
REV 2

MMPQ3467
ON CHARACTERISTICS
DC Current Gain(1) hFE 20 — — —
(IC = –500 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage(1) VCE(sat) — –0.23 –0.5 Vdc
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(1) VBE(sat) — –0.9 –1.2 Vdc
(IC = –500 mAdc, IB = –50 mAdc)
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = –500 mAdc, IB1 = –50 mAdc)
(IC = –500 mAdc, IB1 = IB2 = –50 mAdc)

MOTOROLA
Quad Core Driver

Transistor MMPQ3725
NPN Silicon 1
2
16
3 14
4 13
5 12
6 11
7 10
8 9
16

SO–16
MAXIMUM RATINGS
Temperature Range
Four
Each Transistors
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CES 60 — — Vdc
(IC = 100 mAdc, VBE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
REV 1

MMPQ3725
(IC = 100 mAdc, VCE = 1.0 Vdc) 35 75 200
(IC = 500 mAdc, VCE = 2.0 Vdc) 25 45 —
Base – Emitter Saturation Voltage VBE(sat) 0.8 0.9 1.1 Vdc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = –3.8 Vdc)
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)

MOTOROLA
Quad Amplifier/Switch
Transistor MMPQ3904
NPN Silicon 1
2
16
15
3 14
4 13
5 12
6 11
7 10
8 9
16

SO–16
MAXIMUM RATINGS
Four
Each Transistors
Total Power Dissipation PD
@ TA = 25°C 0.4 800 mW
@ TC = 25°C 0.66 1.92

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
(VEB = 4.0 Vdc, IC = 0)
REV 1

MMPQ3904
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 30 90 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 160 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 75 200 —
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 10 Vdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc)
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

MOTOROLA
Quad Amplifier/Switch
Transistor MMPQ3906
PNP Silicon 1
2
16
15
3 14
4 13
5 12
6 11
7 10
8 9
16


Four
Each Transistors
Power Dissipation @ TA = 25°C PD 0.4 800 mW
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –4.0 Vdc, IC = 0)
REV 1

MMPQ3906
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 40 160 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 60 180 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 75 200 —
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cib — 4.8 10 pF
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = –10 mAdc, VBE(off) = 0.5 Vdc, IB1 = –1.0 mAdc)
(IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc)

MOTOROLA
Quad Complementary Pair

Transistor 1 16
MMPQ6700
PNP/NPN Silicon 2
3
15
14
4 13 Voltage and current are negative
5 12 for PNP transistors
6 11
7 10
8 9
MAXIMUM RATINGS
1
Emitter – Base Voltage VEB 5.0 Vdc CASE 751B–05, STYLE 4
SO–16
Four
Each Transistors
Total Power Dissipation @ TC = 25°C PD 0.66 1.92 Watts
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 — Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc
Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — 50 nAdc
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO — 50 nAdc
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 70 —
Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.25 Vdc
Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 0.9 Vdc
Output Capacitance Cob — 4.5 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cib pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP — 10
NPN — 8.0

MOTOROLA
Quad MPU Clock Buffer

Transistor MMPQ6842
NPN/PNP Silicon 1
2
16
15
3 14
4 13 Voltage and current are negative
5 12 for PNP transistors
6 11
7 10
8 9
16

SO–16
MAXIMUM RATINGS
Four
Each Transistors
@ TA = 25°C 0.4 0.72
@ TC = 25°C 0.66 1.92

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 20 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)

MMPQ6842
(IC = 0.5 mAdc, VCE = 1.0 Vdc) 30 — —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 — —
(IC = 10 mAdc, VCE = 1.0 Vdc) 70 — —
(IC = 0.5 mAdc, IB = 0.05 mAdc, 0°C v T v 70°C)
(IC = 0.5 mAdc, IB = 0.05 mAdc)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP — 5.0 10
NPN — 4.0 8.0
SWITCHING CHARACTERISTICS (TA = 25°C, VCC = 5.0 Vdc)

Propagation Delay Time ns
(50% Points TP1 to TP3) tPLH — 15 25
(50% Points TP2 to TP4) tPHL — 6.0 15
Rise Time tr 5.0 25 35 ns
(0.3 V to 4.7 V, TP3 or TP4)
Fall Time tf 5.0 10 20 ns
(4.7 V to 0.3 V, TP3 or TP4)

MOTOROLA
Bias Resistor Transistor MMUN2111LT1

Monolithic Bias Resistor Network SERIES
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components PNP SILICON
by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR
cost and board space. The device is housed in the SOT-23 package which is TRANSISTOR
PIN 3
COLLECTOR
• Reduces Component Count (OUTPUT)
3
• The SOT-23 package can be soldered using wave or
R1
reflow. The modified gull-winged leads absorb thermal
1
stress during soldering eliminating the possibility of PIN 1 R2
2
damage to the die. BASE
• Available in 8 mm embossed tape and reel. Use the (INPUT)
Device Number to order the 7 inch/3000 unit reel. PIN 2 CASE 318-08, STYLE 6
Replace “T1” with “T3” in the Device Number to order EMITTER SOT-23 (TO-236AB)
the 13 inch/10,000 unit reel. (GROUND)

Total Power Dissipation @ TA = 25°C(1) PD *200 mW
Thermal Resistance — Junction-to-Ambient (surface mounted) RθJA 625 °C/W
Maximum Temperature for Soldering Purposes, 260 °C
TL
DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K)
MMUN2111LT1 A6A 10 10
MMUN2112LT1 A6B 22 22
MMUN2113LT1 A6C 47 47
MMUN2114LT1 A6D 10 47
MMUN2115LT1(2) A6E 10 ∞
2. New devices. Updated curves to follow in subsequent data sheets.
(Replaces MMUN2111T1/D)

MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
MMUN2116LT1(2) A6F 4.7 ∞
MMUN2130LT1(2) A6G 1.0 1.0
MMUN2131LT1(2) A6H 2.2 2.2
MMUN2132LT1(2) A6J 4.7 4.7
MMUN2133LT1(2) A6K 4.7 47
MMUN2134LT1(2) A6L 22 47

OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc
Emitter-Base Cutoff Current MMUN2111LT1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MMUN2112LT1 — — 0.2
MMUN2113LT1 — — 0.1
MMUN2114LT1 — — 0.2
MMUN2115LT1 — — 0.9
MMUN2116LT1 — — 1.9
MMUN2130LT1 — — 4.3
MMUN2131LT1 — — 2.3
MMUN2132LT1 — — 1.5
MMUN2133LT1 — — 0.18
MMUN2134LT1 — — 0.13
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc
DC Current Gain MMUN2111LT1 hFE 35 60 —
(VCE = 10 V, IC = 5.0 mA) MMUN2112LT1 60 100 —
MMUN2113LT1 80 140 —
MMUN2114LT1 80 140 —
MMUN2115LT1 160 250 —
MMUN2116LT1 160 250 —
MMUN2130LT1 3.0 5.0 —
MMUN2131LT1 8.0 15 —
MMUN2132LT1 15 27 —
MMUN2133LT1 80 140 —
MMUN2134LT1 80 130 —
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) VCE(sat) — — 0.25 Vdc
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
Output Voltage (on) VOL Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MMUN2111LT1 — — 0.2
MMUN2112LT1 — — 0.2
MMUN2114LT1 — — 0.2
MMUN2115LT1 — — 0.2
MMUN2116LT1 — — 0.2
MMUN2130LT1 — — 0.2
MMUN2131LT1 — — 0.2
MMUN2132LT1 — — 0.2
MMUN2133LT1 — — 0.2
MMUN2134LT1 — — 0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MMUN2113LT1 — — 0.2

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

MMUN2111LT1 SERIES
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) VOH 4.9 — — Vdc
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1
Input Resistor MMUN2111LT1 R1 7.0 10 13 kΩ
MMUN2112LT1 15.4 22 28.6
MMUN2113LT1 32.9 47 61.1
MMUN2114LT1 7.0 10 13
MMUN2115LT1 7.0 10 13
MMUN2116LT1 3.3 4.7 6.1
MMUN2130LT1 0.7 1.0 1.3
MMUN2131LT1 1.5 2.2 2.9
MMUN2132LT1 3.3 4.7 6.1
MMUN2133LT1 3.3 4.7 6.1
MMUN2134LT1 15.4 22 28.6
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 R1/R2 0.8 1.0 1.2
MMUN2114LT1 0.17 0.21 0.25
MMUN2115LT1/MMUN2116LT1 — — —
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 0.8 1.0 1.2
MMUN2133LT1 0.055 0.1 0.185

MMUN2111LT1 SERIES
MMUN2111LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)

250
1
PD , POWER DISSIPATION (MILLIWATTS)
IC/IB = 10
200
TA = –25°C
25°C
150
75°C
0.1
100
RθJA = 625°C/W
50
0 0.01
–50 0 50 100 150 0 20 40 60 80
TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve Figure 2. VCE(sat) versus IC
1000 4
VCE = 10 V
f = 1 MHz
lE = 0 V
3 TA = 25°C
TA = 75°C
25°C
100 2
–25°C
10 0
1 10 100 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain Figure 4. Output Capacitance
100 100
25°C
75°C
VO = 0.2 V
TA = –25°C
IC , COLLECTOR CURRENT (mA)
10
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
10
1
25°C
75°C
0.1
1
0.01
VO = 5 V
0.001 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50
Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

MMUN2111LT1 SERIES
MMUN2112LT1
10 1000
h FE , DC CURRENT GAIN (NORMALIZED)

IC/IB = 10 VCE = 10 V
TA = –25°C
25°C
TA = 75°C
1 75°C 25°C
100 –25°C
0.1
0.01 10
0 20 40 60 80 1 10 100
Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain
4 100
75°C 25°C
f = 1 MHz TA = –25°C
lE = 0 V 10
3 TA = 25°C
1
2
0.1
1
VO = 5 V
0.01
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
0.1
0 10 20 30 40 50
Figure 11. Input Voltage versus Output Current

MMUN2111LT1 SERIES
MMUN2113LT1
1 1000
IC/IB = 10
h FE , CURRENT GAIN (NORMALIZED)

TA = 75°C
TA = –25°C
25°C 25°C
75°C –25°C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
1 100
TA = 75°C 25°C
f = 1 MHz I C , COLLECTOR CURRENT (mA)
lE = 0 V
0.8 10 –25°C
TA = 25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 2 V
TA = –25°C
Vin , INPUT VOLTAGE (VOLTS)
25°C
10 75°C
0.1
0 10 20 30 40 50

MMUN2111LT1 SERIES
MMUN2114LT1
1 180
IC/IB = 10 TA = 75°C
hFE, DC CURRENT GAIN (NORMALIZED)

TA = –25°C 160 VCE = 10 V
25°C
140
25°C
0.1 –25°C
75°C 120
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4.5 100
4 f = 1 MHz TA = 75°C 25°C
lE = 0 V
3.5
TA = 25°C
–25°C
3
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10 +12 V
VO = 0.2 V TA = –25°C
25°C
V in , INPUT VOLTAGE (VOLTS)
75°C Typical Application

for PNP BRTs
1
LOAD
0.1
0 10 20 30 40 50
Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source

MOTOROLA
Bias Resistor Transistor MMUN2211LT1

NPN Silicon Surface Mount Transistor with SERIES
Monolithic Bias Resistor Network Motorola Preferred Devices
resistor and a base-emitter resistor. The BRT eliminates these individual components NPN SILICON
by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR
cost and board space. The device is housed in the SOT-23 package which is TRANSISTOR
PIN 3
COLLECTOR
• Reduces Component Count (OUTPUT) 3
• The SOT-23 package can be soldered using wave or R1
reflow. The modified gull-winged leads absorb thermal 1
stress during soldering eliminating the possibility of PIN 1 R2 2
damage to the die. BASE
(INPUT)
• Available in 8 mm embossed tape and reel. Use the
PIN 2 CASE 318-08, STYLE 6
Device Number to order the 7 inch/3000 unit reel.
EMITTER SOT-23 (TO-236AB)
Replace “T1” with “T3” in the Device Number to order (GROUND)
the13 inch/10,000 unit reel.
Total Power Dissipation @ TA = 25°C(1) *200 mW
PD
Maximum Temperature for Soldering Purposes, 260 °C
TL

MMUN2211LT1 A8A 10 10
MMUN2212LT1 A8B 22 22
MMUN2213LT1 A8C 47 47
MMUN2214LT1 A8D 10 47
MMUN2215LT1(2) A8E 10 ∞
MMUN2216LT1(2) A8F 4.7 ∞
MMUN2230LT1(2) A8G 1 1
MMUN2231LT1(2) A8H 22
2.2 22
2.2
MMUN2232LT1(2) A8J 4.7 4.7
MMUN2233LT1(2) A8K 4.7 47
MMUN2234LT1(2) A8L 22 47
(Replaces MMUN2211T1/D)

MMUN2211LT1 SERIES
OFF CHARACTERISTICS
Emitter-Base Cutoff Current MMUN2211LT1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MMUN2212LT1 — — 0.2
MMUN2213LT1 — — 0.1
MMUN2214LT1 — — 0.2
MMUN2215LT1 — — 0.9
MMUN2216LT1 — — 1.9
MMUN2230LT1 — — 4.3
MMUN2231LT1 — — 2.3
MMUN2232LT1 — — 1.5
MMUN2233LT1 — — 0.18
MMUN2234LT1 — — 0.13
DC Current Gain MMUN2211LT1 hFE 35 60 —
(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1 60 100 —
MMUN2213LT1 80 140 —
MMUN2214LT1 80 140 —
MMUN2215LT1 160 350 —
MMUN2216LT1 160 350 —
MMUN2230LT1 3.0 5.0 —
MMUN2231LT1 8.0 15 —
MMUN2232LT1 15 30 —
MMUN2233LT1 80 200 —
MMUN2234LT1 80 150 —
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) — — 0.25 Vdc
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1 — — 0.2
MMUN2212LT1 — — 0.2
MMUN2214LT1 — — 0.2
MMUN2215LT1 — — 0.2
MMUN2216LT1 — — 0.2
MMUN2230LT1 — — 0.2
MMUN2231LT1 — — 0.2
MMUN2232LT1 — — 0.2
MMUN2233LT1 — — 0.2
MMUN2234LT1 — — 0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1 — — 0.2
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω) VOH 4.9 — — Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω) MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211LT1 SERIES
Input Resistor MMUN2211LT1 R1 7.0 10 13 kΩ
MMUN2212LT1 15.4 22 28.6
MMUN2213LT1 32.9 47 61.1
MMUN2214LT1 7.0 10 13
MMUN2215LT1 7.0 10 13
MMUN2216LT1 3.3 4.7 6.1
MMUN2230LT1 0.7 1.0 1.3
MMUN2231LT1 1.5 2.2 2.9
MMUN2232LT1 3.3 4.7 6.1
MMUN2233LT1 3.3 4.7 6.1
MMUN2234LT1 15.4 22 28.6
Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 R1/R2 0.8 1.0 1.2
MMUN2214LT1 0.17 0.21 0.25
MMUN2215LT1/MMUN2216LT1 — — —
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 0.8 1.0 1.2
MMUN2233LT1 0.055 0.1 0.185
MMUN2234LT1 0.38 0.47 0.56
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211LT1 SERIES
MMUN2211LT1

250 1
IC/IB = 10
200 TA = –25°C
25°C
0.1 75°C
150
100
0.01
RθJA = 625°C/W
50
0 0.001
–50 0 50 100 150 0 20 40 60 80
TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve Figure 2. VCE(sat) versus IC
1000 4
VCE = 10 V f = 1 MHz
lE = 0 V
TA = 75°C 3 TA = 25°C
25°C
–25°C
100 2
10 0
1 10 100 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain Figure 4. Output Capacitance
100 10
25°C
75°C VO = 0.2 V TA = –25°C
10 TA = –25°C 25°C
75°C
1
1
0.1
0.01
VO = 5 V
0.001 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50
Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 5. VCE(sat) versus IC Figure 6. VCE(sat) versus IC

MMUN2211LT1 SERIES
MMUN2212LT1
1 1000
VCE = 10 V

IC/IB = 10 TA = –25°C
25°C TA = 75°C
25°C
75°C
0.1
–25°C
100
0.01
–
0.001 10
0 20 40 60 80 1 10 100
4 100 75°C 25°C

f = 1 MHz TA = –25°C
lE = 0 V 10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
Vin , INPUT VOLTAGE (VOLTS)
10
75°C 25°C
0.1
0 10 20 30 40 50

MMUN2211LT1 SERIES
MMUN2213LT1
10 1000
IC/IB = 10 TA = –25°C VCE = 10 V
h FE , DC CURRENT GAIN (NORMALIZED)

TA = 75°C
25°C 75°C
1 25°C
–25°C
100
0.1
0.01 10
0 20 40 60 80 1 10 100
1 100
75°C 25°C
f = 1 MHz
lE = 0 V
0.8 TA = 25°C I C , COLLECTOR CURRENT (mA) 10 TA = –25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MMUN2211LT1 SERIES
MMUN2214LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
1 300
IC/IB = 10 TA = –25°C TA = 75°C

VCE = 10
250
25°C 25°C
0.1 200
–25°C
75°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4 100
f = 1 MHz 75°C 25°C
3.5
lE = 0 V
3 TA = 25°C
2.5
TA = –25°C
2 10
1.5
0.5 VO = 5 V
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
TA = –25°C
VO = 0.2 V
25°C
75°C
1
0.1
0 10 20 30 40 50

MMUN2211LT1 SERIES
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD
Figure 23. Open Collector Inverter: Inverts Figure 24. Inexpensive, Unregulated Current Source
the Input Signal

MOTOROLA
Quad General Purpose MPQ2222

Transistors MPQ2222A*
NPN Silicon 14 13 12 11 10 9 8
NPN *Motorola Preferred Device
1 2 3 4 5 6 7
14
1

Rating Symbol MPQ2222 MPQ2222A Unit TO–116

Each Total
Transistor Device
Total Device Dissipation @ TA = 25°C PD 0.65 1.9 Watts
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPQ2222 40 —
MPQ2222A 40 —
(IC = 10 mAdc, IE = 0) MPQ2222 60 —
MPQ2222A 75 —
(IE = 10 mAdc, IC = 0) MPQ2222 5.0 —
MPQ2222A 6.0 —
(VCB = 50 Vdc, IE = 0) MPQ2222 — 50
(VCB = 60 Vdc, IE = 0) MPQ2222A — 10
(VEB = 3.0 Vdc, IC = 0)

(Replaces MPQ2221/D)

MPQ2222 MPQ2222A
ON CHARACTERISTICS
(IC = 100 mAdc, VCE = 10 Vdc) MPQ2222A 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) MPQ2222A 50 —
(IC = 10 mAdc, VCE = 10 Vdc) MPQ2222,A 75 —
(IC = 150 mAdc, VCE = 10 Vdc) MPQ2222,A 100 300
(IC = 300 mAdc, VCE = 10 Vdc) MPQ2222 30 —
(IC = 500 mAdc, VCE = 10 Vdc) MPQ2222A 40 —

(IC = 150 mAdc, IB = 15 mAdc) MPQ2222 — 0.4
MPQ2222A — 0.3
(IC = 500 mA, IB = 50 mA) MPQ2222A — 1.0
MPQ2222A 0.6 1.2
(IC = 500 mA, IB = 50 mA) MPQ2222A — 2.0

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) MPQ2222A
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) MPQ2222A
DUTY CYCLE = 2.0%

GENERATOR RISE TIME ≤ 2.0 ns +30 V +30 V
PW ≤ 200 ns ≈ 100 ms
DUTY CYCLE = 2.0% < 5.0 ns
200 +16.2 V 200
619 1.0 k
9.9 V
0
0 1N916
0.5 V
SCOPE –13.8 V SCOPE
Rin > 100 k ohms ≈ 500 ms Rin > 100 k ohms
Cin ≤ 12 pF –3.0 V Cin ≤ 12 pF
Figure 1. Delay and Rise Time Figure 2. Storage Time and Fall Time

MPQ2222 MPQ2222A
4.0
3.0 VCE = 1.0 V
TJ = 175°C VCE = 10 V
2.0
25°C
1.0
0.7 –55°C
0.5
0.3
0.2
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 3. Normalized DC Current Gain
1.4 +1.6
qV , TEMPERATURE COEFFICIENT (mV/° C)

TJ = 25°C
1.2
+0.8 25°C TO 175°C
V, VOLTAGE (VOLTS)
0.8 0 –55°C TO 25°C

0.6
VBE @ VCE = 1.0 V –0.8
0.4
–1.6 qVB FOR VBE
0 –2.4
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
6.0 10
100 mA
f = 1.0 kHz
5.0 IC = 1.0 mA
8.0
10 mA
4.0
IC = 10 mA 6.0
3.0 RS = 4.3 kW
4.0
2.0 IC = 100 mA
RS = 1.0 kW
2.0
1.0
0 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPQ2222 MPQ2222A
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

500 30
VCE = 20 V TJ = 25°C
300
TJ = 25°C 20
200 f = 100 MHz
C, CAPACITANCE (pF)
100 Cib
70 10
50
7.0 Cob
30
20 5.0
10 3.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
SWITCHING TIME CHARACTERISTICS

200 10 k
TJ = 25°C TJ = 25°C
5k
tr IC/IB = 10 IC/IB = 10
100 2k VCC = 5 V
VCC = 30 V UNLESS NOTED
1k
CHARGE (pC)
UNLESS NOTED QT, TOTAL CONTROL
t, TIME (ns)
50 500 CHARGE
HIGH GAIN TYPES
30 200 VCC = 30 V LOW GAIN TYPES

td @ VEB(off) = 0
100 QA, ACTIVE REGION
20 ALL TYPES
tr @ 5 V CHARGE
50
td @ VEB(off) = 2 V
10 20
3.0 5.0 10 20 30 50 100 200 300 3.0 5.0 7.0 10 20 30 50 70 100 200 300
Figure 10. Turn–On Time Figure 11. Charge Data
300 300
ts
200 200
t s ,t f , STORAGE AND FALL TIME (ns)
t s ,t f , STORAGE AND FALL TIME (ns)
ts IC/IB = 10
IC/IB = 10
100 100
IC/IB = 20
70 70
50 IC/IB = 20 50 IC/IB = 10
IC/IB = 10 tf tf
30 30
HIGH GAIN TYPES
20 LOW GAIN TYPES 20 TJ = 25°C
TJ = 25°C
10 10
10 20 30 50 70 100 200 300 10 20 30 50 70 100 200 300
Figure 12. Turn–Off Behavior Figure 13. Turn–Off Behavior

MPQ2222 MPQ2222A
GENERATOR RISE TIME ≤ 2.0 ns
PW ≤ 200 ns +30 V +30 V
DUTY CYCLE = 2.0% RISE TIME ≤ 3.0%
DUTY CYCLE = 2.0%
200 200
+16.2 V
SCOPE SCOPE
619 Rin > 100 k ohms 1.0 k Rin > 100 k ohms
9.9 V Cin ≤ 12 pF 0 Cin ≤ 12 pF
> 200 ns 1N916

0 –13.8 V
–3.0 V
Figure 14. Delay and Rise Time Figure 15. Storage Time and Fall Time

MOTOROLA
Quad Switching
Transistor MPQ2369
NPN Silicon
14 13 12 11 10 9 8
NPN
1 2 3 4 5 6 7
14
1

TO–116
MAXIMUM RATINGS
Each Total
Transistor Device
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 20 Vdc, IE = 0)

MPQ2369
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1.0 Vdc) 40 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) 20 — —

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 2.5 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 3.0 5.0 pF
Turn–On Time ton — 9.0 — ns
(VCC = 3.0 Vdc, VBE = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)

MPQ2369
+10 V
980
SCOPE
+6.0 V 500
0
CS ≤ 3.0 pF
–4.0 V
PULSE WIDTH = 300 ns
tf ≤ 1.0 ns
DUTY CYCLE ≤ 2.0%
Figure 1. Storage Time Test Circuit
200 200
IC/IB = 10 VCC = 10 V
100 TJ = 25°C 100 IC/IB = 10
70 70 TJ = 25°C
50 50
t, TIME (ns)
t, TIME (ns)
30 tr @ VCC = 3.0 V tr @ VCC = 10 V 30
tf
20 20
10 10
7.0 7.0 ts
5.0 5.0
3.0 td @ VBE(off) = 1.5 V 3.0

2.0 2.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCC = 3.0 V VCC = 3.0 V
270 270
+10.75 V SCOPE +10.75 V SCOPE

3.3 k 3.3 k
0 0
CS < 4.0 pF CS < 4.0 pF
–1.5 V
–4.15 V
PULSE WIDTH = 300 ns
tr < 1.0 ns PULSE WIDTH = 300 ns
DUTY CYCLE ≤ 2.0% tf ≤ 1.0 ns
DUTY CYCLE ≤ 2.0%
Figure 4. Turn–On Test Circuit Figure 5. Turn–Off Test Circuit

MPQ2369

5.0 2.0 k
TJ = 25°C
VCE = 10 V
Cib f = 100 MHz
3.0
C, CAPACITANCE (pF)
1.0 k
2.0
Cob 700
500
1.0
0.7 300
0.5 200
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
500 1.4
TJ = 25°C
300 TJ = 150°C
1.2
200
25°C 1.0
h FE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
100
–55°C VBE(SAT) @ IC/IB = 10
70 0.8
50 VBE(ON) @ VCE = 1.0 V
0.6
30
20 0.4
VCE = 1.0 V
10 VCE = 5.0 V 0.2 VCE(SAT) @ IC/IB = 10
7.0
5.0 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
Figure 8. DC Current Gain Figure 9. “ON” Voltages
1.0 +2.0
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
q V , TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C *APPLIES FOR IC/IB ≤ hFE/3.0
0.8 +1.0
25°C TO 150°C
30 mA 100 mA 200 mA *qVC FOR VCE(SAT)
0.6 0
–55°C TO 25°C
0.4 –1.0
25°C TO 150°C
qVB FOR VBE
0.2 –2.0
IC = 10 mA
–55°C TO 25°C
0 –3.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

MOTOROLA
Quad Amplifier Transistors MPQ2483

NPN Silicon
14 13 12 11 10 9 8
MPQ2484*
NPN
1 2 3 4 5 6 7
MAXIMUM RATINGS
Collector – Base Voltage VCBO 60 Vdc 1

TO–116
Four
Each Transistors
@ TA = 25°C(1) 500 900 mW
@ TC = 25°C 0.825 2.4 Watts
Temperature Range
Junction Junction
Characteristic to Case to Ambient Unit
Thermal Resistance Each Die 151 250 °C/W
Effective, 4 Die 52 134 °C/W
Coupling Factors Q1–Q4 or Q2–Q3 34 70 %
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 45 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
300 ms; Duty Cycle 2.0%. v

MPQ2483 MPQ2484
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 5.0 Vdc) MPQ2483 100 — —
MPQ2484 200 — —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MPQ2483 150 — —

MPQ2484 300 — —
(IC = 10 mAdc, VCE = 5.0 Vdc) MPQ2483 150 — —

MPQ2484 300 — —
(IC = 1.0 mAdc, IB = 0.1 mAdc) — 0.13 0.35
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.15 0.5
(IC = 100 mAdc, VCE = 5.0 Vdc) — 0.58 0.7
(IC = 10 mAdc, VCE = 5.0 Vdc) — 0.70 0.8

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k ohms, MPQ2483 — 3.0 —
f = 1.0 kHz, BW = 10 kHz) MPQ2484 — 2.0 —

MOTOROLA

Transistors MPQ6100A
NPN/PNP Silicon 14 13 12 11 10 9 8 MPQ6600A1*
Voltage and Current are negative
1 2 3 4 5 6 7
for PNP Transistors
MPQ6100A
TYPE A
14 13 12 11 10 9 8
COMPLEMENTARY
1 2 3 4 5 6 7
MPQ6600A1
TYPE B
14
1

MAXIMUM RATINGS TO–116
MPQ6100A
Rating Symbol MPQ6600A1 Unit
Four
Each Transistors
@ TA = 25°C 500 900 mW
@ TC = 25°C 0.825 2.4 Watts
Temperature Range
Junction to Junction to
Characteristic Case Ambient Unit
Thermal Resistance(1) Each Die 151 250 °C/W
Q1–Q2 or Q3–Q4 2.0 26 %
REV 2

MPQ6100A MPQ6600A1
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPQ6100A, 6600A1 45 — —
(IC = 10 mAdc, IE = 0) 60 — —
(IE = 10 mAdc, IC = 0) 5.0 — —
(VCB = 50 Vdc, IE = 0) — — 10
(IC = 100 mAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1 100 — —
(IC = 500 µAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1 150 — —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1 150 — —
(IC = 10 mAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1 125 — —
(IC = 1.0 mAdc, IB = 100 µAdc) — — 0.25
(IC = 1.0 mAdc, IB = 100 µAdc) — — 0.8

(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) PNP — 1.2 4.0
NPN — 1.8 4.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP — — 8.0
NPN — — 8.0
Noise Figure NF — 4.0 — dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ,
f = 1.0 kHz, BW = 10 kHz)
MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)

DC Current Gain Ratio hFE1/hFE2 0.8 — 1.0 —
(IC = 100 µAdc, VCE = 5.0 Vdc)
Base–Emitter Voltage Differential |VBE1–VBE2| — — 20 mVdc
(IC = 100 µAdc, VCE = 5.0 Vdc)

MPQ6100A MPQ6600A1
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
12 12
10 10 –1 mA
NOISE FIGURE (dB)
NOISE FIGURE (dB)

–1 mA
8 8 –100 µA
6 6
–10 µA
4 4
–100 µA
2 2
–10 µA
0 0
1.0 k 10 k 100 k 1.0 k 10 k 100 k
Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS)
Figure 1. Source Resistance Effects, f = 1.0 kHz Figure 2. Source Resistance Effects, f = 10 Hz
Rs SOURCE RESISTANCE VCE = – 5.0 Vdc

12 IC = –100 µA, RS = 30 kΩ
800
IC = –10 µA, RS = 100 kΩ

10 TA = 125°C
NOISE FIGURE (dB)
IC = –1.0 mA, RS = 1.0 kΩ

8 600
IC = –10 µA, RS = 10 kΩ
TA = 25°C
6 IC = –100 µA, RS = 3.0 kΩ
400
4 TA = – 55°C
200
2
0 0
1.0 k 10 k 100 k – 0.01 – 0.1 – 1.0 – 10
f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mAdc)
Figure 3. Frequency Effects Figure 4. Typical Current

Gain Characteristics

MOTOROLA
Quad General Purpose MPQ2906

Transistors MPQ2907
PNP Silicon 14 13 12 11 10 9 8
PNP MPQ2907A*
1 2 3 4 5 6 7
14
MAXIMUM RATINGS 1
MPQ2906
Rating Symbol MPQ2907 MPQ2907A Unit CASE 646–06, STYLE 1
Collector – Emitter Voltage VCEO –40 –60 Vdc TO–116

Each Total
Transistor Device
Temperature Range
OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0) MPQ2906, MPQ2907 –40 —
MPQ2907A –60 —
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0) MPQ2906, MPQ2907
(VCB = –50 Vdc, IE = 0) MPQ2907A
Emitter Cutoff Current IEBO — –50 nAdc
(VEB = –3.0 Vdc, IE = 0) MPQ2906,7 Only
REV 3

MPQ2906 MPQ2907 MPQ2907A
ON CHARACTERISTICS
(IC = –100 mAdc, VCE = –10 Vdc) MPQ2907A 75 —
(IC = –1.0 mAdc, VCE = –10 Vdc) MPQ2907A 100 —
(IC = –10 mAdc, VCE = –10 Vdc) MPQ2906 35 —
MPQ2907 75 —
(IC = –150 mAdc, VCE = –10 Vdc) MPQ2907A 100 300
MPQ2907 100 —
MPQ2907 30 —

(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –300 mAdc, IB = –30 mAdc) MPQ2906, MPQ2907 — –1.6
(IC = –500 mA, IB = –500 mA) MPQ2907A — –1.6
(IC = –500 mA, IB = –50 mA) MPQ2907A — –2.6
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = 15 mAdc) MPQ2907A Only
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc) MPQ2907A Only
–30 +15 V –6.0
INPUT INPUT
Zo = 50 W 200 Zo = 50 W 1.0 k 37
RISE TIME ≤ 2.0 ns RISE TIME ≤ 2.0 ms
1.0 k TO OSCILLOSCOPE 1.0 k TO OSCILLOSCOPE
0 RISE TIME ≤ 5.0 ns 0 RISE TIME ≤ 5.0 ns
–16 V 50 –30 V 50 1N916
200 ns 200 ns
Test Circuit Test Circuit

2.0
TJ = +175°C
1.0 +25°C
0.7
0.5
–55°C
0.3 VCE = 10 V
VCE = 1.0 V
0.2
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
2.0 +2.0
TJ = 25°C
1.6 +1.0 qVC FOR VCE(sat)
“ON” VOLTAGE (VOLTS)
COEFFICIENT (mV/° C) –55°C TO +25°C

1.2 VBE(sat) @ IC/IB = 10 0
+25°C TO +175°C
0.8 –1.0 qVB FOR VBE

VBE @ VCE = 1.0 V
+25°C TO +175°C
0.4 –2.0
–55°C TO +25°C
0 –3.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
NOISE FIGURE
(VCE = 10 V, TA = 25°C)
6.0 10
VCE = 10 Vdc f = 1.0 kHz
5.0 TA = 25°C
8.0 IC = 10 mA
4.0
IC = 10 mA 6.0 100 mA
3.0 RS = 4.7 kW
4.0
IC = 1.0 mA
RS = 0.7 kW
2.0
2.0 1.0 mA VCE = 10 Vdc

IC = 100 mA
1.0
TA = 25°C
RS = 1.2 kW
0 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100


600 30
VCE = 20 Vdc
f = 100 MHz TJ = 25°C
400 20 f = 100 kHz
TJ = 25°C
Cib
C, CAPACITANCE (pF)
Cob
200 10
7.0
100 5.0
80
60 3.0
0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
500 5000
VCC = 30 V, VBE(off) = 2.0 V
300 VCC = 10 V, VBE(off) = 0 V 3000 VCC = 30 V
TJ = 25°C
200 2000
IC/IB = 10
QT, TOTAL CONTROL CHARGE
TJ = 25°C Q, CHARGE (pC)
t, TIME (ns)
100 tr 1000
70 700
50 td 500
30 300
20 200 QA, ACTIVE REGION CHARGE
10 100
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 10. Turn–On Time Figure 11. Charge Data
500 500
300 300 VCC = 30 V

IB1 = IB2
200 t′s – ts – 1/8 tf 200 TJ = 25°C
IC/IB = 20
100 100
IB1 = IB2
70 TJ = 25°C 70 IC/IB = 10
50 IC/IB = 10 50
30 30
20 IC/IB = 20 20
10 10
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

u
P.W. 200 ns
–30 V
P.W. ≈ 1.0 ms
–30 V
tr ≤ 2.0 ns tr ≤ 2.0 ns
DUTY CYCLE ≤ 2.0% 200 DUTY CYCLE ≤ 2.0% 200
+13.8 V
1.0 k SCOPE 1.0 k SCOPE
0 0
–16 V –16.2 V 1N916
–3.0 V
Test Circuit Test Circuit

MOTOROLA
Quad Memory Driver

Transistor MPQ3467
PNP Silicon Motorola Preferred Device
14 13 12 11 10 9 8
PNP
1 2 3 4 5 6 7
MAXIMUM RATINGS
Collector – Emitter Voltage VCEO –40 Vdc 1

Emitter – Base Voltage VEBO –5.0 Vdc TO–116
Four
Each Transistors
@ TA = 25°C(1) 650 1500 mW
@ TC = 25°C 1.25 3.2 Watts
Derate above 25°C 10 25.6 mW/°C
Temperature Range
RqJC RqJA
Junction Junction
Effective, 4 Die 39 83.2 °C/W
Q1–Q2 or Q3–Q4 5.0 10 %

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)

MPQ3467
ON CHARACTERISTICS
DC Current Gain(2) hFE –20 — — —
(IC = –500 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage(2) VCE(sat) — –0.23 –0.5 Vdc
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(2) VBE(sat) — –0.90 –1.2 Vdc
(IC = –500 mAdc, IB = –50 mAdc)

Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 10 25 pF
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 55 80 pF
(IC = –500 mAdc, IB1 = –50 mAdc)
(IC = –500 mAdc, IB1 = IB2 = –50 mAdc)

MPQ3467
200 – 1.6
IC = 10 IB1 = 10 IB2

VCC = – 30 V – 1.4
TJ = 25°C βF = 10
t ′sv, STORAGE TIME (ns)
– 1.2 MAX
100 TJ = 125°C TJ = 25°C
– 1.0
70 βF = 10, 20 VBE(sat)
– 0.8
MIN
50 βF = 10 – 0.6
MAX VCE(sat)
βF = 20 – 0.4
30
t′s ≈ ts – 1/8 tf – 0.2
20 0
– 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000
Figure 1. Storage Time Variation Figure 2. Limits of Saturation Voltage

with Temperature
70
TJ = 125°C VCE = – 1.0 V
VCE = – 2.0 V
hFE , MINIMUM CURRENT GAIN
50 TJ = 25°C
30
TJ = – 55°C
20
10
– 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000

MOTOROLA
Quad Core Driver Transistor

NPN Silicon MPQ3725
14 13 12 11 10 9 8
NPN
1 2 3 4 5 6 7
MAXIMUM RATINGS 14

Collector – Emitter Voltage VCES 60 Vdc CASE 646–06, STYLE 1
TO–116
Four
One Transistors
@ TA = 25°C 1.0 2.5 Watts
Temperature Range
Effective
One For Four
Transistor Transistors
Thermal Resistance, RqJA 125 50 °C/W
Junction to Ambient(1)

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, VBE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
1. RqJA is measured with the device soldered into a typical printed circuit board.
REV 3

MPQ3725
(IC = 100 mAdc, VCE = 1.0 Vdc) 35 75 200
(IC = 500 mAdc, VCE = 2.0 Vdc) 25 45 —
Base – Emitter Saturation Voltage VBE(sat) 0.8 0.9 1.1 Vdc

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 5.1 10 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 62 80 pF
Turn–On Time ton — 20 35 ns
(IC = 500 mAdc, IB1 = 50 mAdc
VBE(off) = –3.8 Vdc)
Turn–Off Time toff — 50 60 ns
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
–3.8 V +30 V
1.0 mF
15
TO
1.0 k SAMPLING
43 OSCILLOSCOPE
+9.7 V Zin ≥ 100 kW
1.0 mF 100 tr < 1.0 ns
0
PULSE GENERATOR
tr, tf ≤ 1.0 ns
PW ≈ 1.0 ms
62
Zin = 50 W
DUTY CYCLE ≤ 2.0%
Figure 1. Switching Times Test Circuit

MPQ3725
2.0
IC , COLLECTOR CURRENT (AMP)

1.0
10 ms
0.5 dc
0.3
0.2
TJ = 200°C
0.1
SECOND BREAKDOWN LIMITED
0.05 THERMAL LIMITATION @ TC = 25°C
PULSE DUTY CYCLE ≤ 10%
0.03 APPLICABLE TO RATED BVCEO
0.02
3.0 4.0 6.0 8.0 10 20 30 40 60
TYPICAL DC CHARACTERISTICS
400 1.4
TJ = 25°C
VCE = 1.0 V
TJ = 125°C 1.2
200
1.0
V, VOLTAGE (VOLTS)
25°C
0.8
100
80 –55°C 0.6 VBE(sat) @ IC/IB = 10
60
0.4
40
0.2
20 0
10 20 50 100 200 500 1000 10 20 50 100 200 500 1000
1.0 +2.5
qV, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C +2.0 *APPLIES FOR IC/IB < hFE/2

0.8 +1.5
+1.0
0.6 +0.5 *qVC FOR VCE(sat)
1000 mA
0
0.4 800 mA –0.5
–1.0
500 mA
0.2 –1.5 qVB FOR VBE
IC = 100 mA 300 mA
–2.0
0 –2.5
0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 20 30 50 100 200 300 500 1000

MPQ3725
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 500 100

VCE = 10 Vdc 70 TJ = 25°C
f = 100 MHz Cib
300 TJ = 25°C 50
C, CAPACITANCE (pF)
30
200
20
10 Cob
100
7.0
70 5.0
50 3.0
4.0 6.0 10 20 40 60 100 200 400 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
200 200
IC /IB = 10 VCC = 10 Vdc
100 TJ = 25°C tf @ IC/IB = 10 TJ = 25°C
100
tf @ IC/IB = 20
50 tr @ VCC = 10 Vdc 70 ts @ IC/IB = 20
t, TIME (ns)
t, TIME (ns)
30 tr @ VCC = 30 Vdc 50 ts @ IC/IB = 10

20
30
10
td @ VBE(off) = 0 V 20
5.0
VBE(off) = –3.8 Vdc
3.0 VCC = 30 Vdc
2.0 10
10 20 30 50 100 200 300 500 1000 10 20 30 50 100 200 300 500 1000
1000
I CES , COLLECTOR CUTOFF CURRENT ( m A)
100
VCE = 60
10
VCE = 30
VCE = 10
1.0
0.1
0.01
0 20 40 60 80 100 120 140 160 180 200
Figure 11. Collector Cutoff Current

MOTOROLA
Quad Memory Driver

Transistor MPQ3762
PNP Silicon 14 13 12 11 10 9 8
PNP
1 2 3 4 5 6 7
14
MAXIMUM RATINGS 1
Collector – Emitter Voltage VCEO –40 Vdc CASE 646–06, STYLE 1
TO–116
Four
Each Transistors
@ TA = 25°C 750 1700 mW
@ TC = 25°C 1.25 3.2 Watts
Temperature Range
Junction Junction
Thermal Resistance(1) Each Die 100 167 °C/W
Q1–Q2 or Q3–Q4 5.0 10 %

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)
2.0%.

MPQ3762
(IC = –150 mAdc, VCE = –1.0 Vdc) 35 70 —
(IC = –500 mAdc, VCE = –2.0 Vdc) 30 65 —
(IC = –1.0 Adc, VCE = –2.0 Vdc) 20 35 —
(IC = –500 mAdc, IB = –50 mAdc) — –0.3 –0.55
(IC = –1.0 Adc, IB = –100 mAdc) — –0.6 –0.9
(IC = –500 mAdc, IB = –50 mAdc) — –0.9 –1.25
(IC = –1.0 Adc, IB = –100 mAdc) — –1.0 –1.4

Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 9.0 15 pF
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 55 80 pF
(VCC = –30 Vdc, IC = –1.0 Adc, IB1 = –100 mAdc, VBE(off) = 2.0 Vdc)
(VCC = –30 Vdc, IC = –1.0 Adc, IB1 = IB2 = –100 mAdc)

MPQ3762
200 – 1.6
IC = 10 IB1 = 10 IB2

VCC = – 30 V – 1.4
TJ = 25°C βF = 10
t ′sv, STORAGE TIME (ns)
– 1.2 MAX
100 TJ = 125°C TJ = 25°C
– 1.0
70 βF = 10, 20 VBE(sat)
– 0.8
MIN
50 βF = 10 – 0.6
MAX VCE(sat)
βF = 20 – 0.4
30
t′s ≈ ts – 1/8 tf – 0.2
20 0
– 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000 – 50 – 70 –100 – 200 – 300 – 500 – 700 – 1000
Figure 1. Storage Time Variation Figure 2. Limits of Saturation Voltage

with Temperature
70
TJ = 125°C VCE = – 1.0 V
VCE = – 2.0 V
hFE , MINIMUM CURRENT GAIN
50 TJ = 25°C
30
TJ = – 55°C
20
10
– 50 – 70 – 100 – 200 – 300 – 500 – 700 – 1000

MOTOROLA
Quad Amplifier Transistors MPQ3798

PNP Silicon
14 13 12 11 10 9 8
MPQ3799*
PNP
1 2 3 4 5 6 7
MAXIMUM RATINGS
Rating Symbol MPQ3798 MPQ3799 Unit
14
1
Collector Current — Continuous IC –50 mAdc CASE 646–06, STYLE 1
Four TO–116
Each Transistors
@ TA = 25°C(1) 0.5 0.9 Watts
@ TC = 25°C 0.825 2.4 Watts
Derate above 25°C 6.7 19.2 m/°C
Temperature Range
RqJC RqJA
Junction Junction
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0) MPQ3798 –40 — —
MPQ3799 –60 — —
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –50 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)
1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating.

MPQ3798 MPQ3799
ON CHARACTERISTICS
(IC = –10 mAdc, VCE = –5.0 Vdc) MPQ3798 100 — —
MPQ3799 225 — —

MPQ3799 300 — —

MPQ3799 300 — —

MPQ3799 250 — —

(IC = –100 mAdc, IB = –10 mAdc) — –0.12 –0.2
(IC = –1.0 mAdc, IB = –100 mAdc) — –0.07 –0.25
(IC = –100 mAdc, IB = –10 mAdc) — –0.62 –0.7
(IC = –1.0 mAdc, IB = –100 mAdc) — –0.68 –0.8

(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 2.1 4.0 pF
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 5.5 8.0 pF
Noise Figure NF dB
(IC = –100 mAdc, VCE = –10 Vdc, RS = 3.0 k ohms, MPQ3798 — 2.5 —
f = 1.0 kHz) MPQ3799 — 1.5 —

MPQ3798 MPQ3799
1000 1000
h FE , CURRENT GAIN 500 500
h FE , CURRENT GAIN
200 200
100 100
10 10
0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 100
Figure 1. DC Current Gain versus Figure 2. DC Current Gain versus

Collector Current Collector Current
1.0 1.0
0.8 0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 0.6
0.4 0.4
0.2 0.2
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 100
Figure 3. “ON” Voltages Figure 4. “ON” Voltages

MOTOROLA
Quad Amplifier Switching

Transistor MPQ3904
NPN Silicon
14 13 12 11 10 9 8
NPN
1 2 3 4 5 6 7
MAXIMUM RATINGS
14
Collector – Base Voltage VCBO 60 Vdc CASE 646–06, STYLE 1
TO–116
Four
Each Transistors
@ TA = 25°C 500 900 mW
@ TC = 25°C 825 2.4 Watts
Temperature Range
Junction Junction
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0)
(VEB = 40 Vdc, IC = 0)


MPQ3904
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 30 90 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 160 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 75 200 —

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 2.0 4.0 pF
(IC = 10 mAdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc)
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

MPQ3904
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
275 275
10 k 10 k
0
– 0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
– 9.1 V′
< 1 ns
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MPQ3904
500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200
100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)
50 50
30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
t′s = ts – 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20
10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

12 14
IC = 1.0 mA 12
10

8 IC = 50 mA
IC = 0.5 mA
8
IC = 50 mA 6
4
4

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

MPQ3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100

50
200
h fe , CURRENT GAIN
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 7.0

10
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MPQ3904

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)

V, VOLTAGE (VOLTS)
0.8 0 – 55°C TO +25°C

VBE @ VCE =1.0 V
0.6 – 0.5
– 55°C TO +25°C
0.4 – 1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA
Quad Amplifier Switching

Transistor MPQ3906
PNP Silicon
14 13 12 11 10 9 8
PNP
1 2 3 4 5 6 7
MAXIMUM RATINGS 14
Collector – Base Voltage VCBO –40 Vdc CASE 646–06, STYLE 1
TO–116
Four
Each Transistors
@ TA = 25°C 500 900 mW
@ TC = 25°C 825 2.4 Watts
Temperature Range
Junction Junction
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –4.0 Vdc, IC = 0)


MPQ3906
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 40 160 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 60 180 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 75 200 —
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)

Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 3.3 4.5 pF
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 4.8 10 pF
(IC = –10 mAdc, VBE(off) = 0.5 Vdc, IB1 = –1.0 mAdc)
(IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc)
3V 3V
+9.1 V < 1 ns
275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2%

MPQ3906
TJ = 25°C
TJ = 125°C
10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)
5.0 Cobo
Q, CHARGE (pC)
1000
700
Cibo
3.0 500
300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
100 100
70 70
TIME (ns)
50 tr @ VCC = 3.0 V 50
30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

MPQ3906
5.0 12
IC = 1.0 mA
10
4.0

IC = 0.5 mA 8
3.0
IC = 50 mA 6
2.0
4 IC = 50 mA

IC = 100 mA 2
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
Figure 7. Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
70
50
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 10
7.0
10
7.0 5.0
5.0
3.0 3.0
2.0 2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MPQ3906
2.0
TJ = +125°C VCE = 1.0 V
1.0 +25°C
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0 1.0

0.5 +25°C TO +125°C
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)
0
0.6 – 55°C TO +25°C
– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
– 1.5
0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

MOTOROLA

Transistors MPQ6001
NPN/PNP Silicon 14 13 12 11 10 9 8
MPQ6002
1 2 3 4 5 6 7
MPQ6502
MPQ6001, MPQ6002
TYPE A
14 13 12 11 10 9 8
for PNP transistors
COMPLEMENTARY
1 2 3 4 5 6 7
MPQ6502
TYPE B
MAXIMUM RATINGS
1
Collector Current — Continuous IC 500 mAdc TO–116
Four
Each Transistors
@ TA = 25°C(1) Watts
MPQ6001, MPQ6002,
MPQ6502 0.65 1.25
Derate above 25°C mW/°C
MPQ6001, MPQ6002,
MPQ6502 5.18 10

@ TC = 25°C Watts
MPQ6001, MPQ6002,
MPQ6502 1.0 3.0
Derate above 25°C mW/°C
MPQ6001, MPQ6002,
MPQ6502 8.0 24

Temperature Range
Junction to Junction to
Characteristic Case Ambient Unit
Thermal Resistance °C/W
Each Die MPQ6001, MPQ6002, MPQ6502 125 193
Effective, 4 Die MPQ6001, MPQ6002, MPQ6502 41.6 100
Coupling Factors %
Q1–Q4 or Q2–Q3 MPQ6001, MPQ6002, MPQ6502 30 60
Q1–Q2 or Q3–Q4 MPQ6001, MPQ6002, MPQ6502 20 24
1. Voltage and Current are negative for PNP devices.
REV 3

MPQ6001 MPQ6002 MPQ6502
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 50 Vdc, IE = 0)
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) MPQ6001 25 — —
MPQ6002, MPQ6502 50 — —
(IC = 10 mAdc, VCE = 10 Vdc) MPQ6001 35 — —

MPQ6002, MPQ6502 75 — —

MPQ6002, MPQ6502 100 — —

MPQ6002, MPQ6502 30 — —
(IC = 150 mAdc, IB = 15 mAdc) — — 0.4
(IC = 300 mAdc, IB = 30 mAdc) — — 1.4
(IC = 150 mAdc, IB = 15 mAdc) — — 1.3
(IC = 300 mAdc, IB = 30 mAdc) — — 2.0

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) PNP — 6.0 8.0
NPN — 4.5 8.0
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) PNP — 20 30
NPN — 17 30
(VCC = 30 Vdc, VEB = 0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc, Figure 1)
(VCC = 30 Vdc, IC = 150 mAdc,

MPQ6001 MPQ6002 MPQ6502
NPN DATA
4.0
VCE = 1.0 V
3.0 TJ = 150°C VCE = 10 V
2.0
+25°C
1.0
0.7 –55°C
0.5
0.3
0.2
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 1. Normalized DC Current Gain
1.4 +1.6
TJ = 25°C
q V , TEMPERATURE COEFFICIENT (mV/ °C)

1.2 +25°C TO +150°C
+0.8
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10 0 –55°C TO +25°C

0.8
0.6
VBE @ VCE = 1.0 V –0.8
0.4
–1.6 qVB FOR VBE
0 –2.4
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
6.0 10
100 mA
f = 1.0 kHz
5.0 IC = 1.0 mA
8.0
4.0 10 mA
IC = 10 mA 6.0
3.0 RS = 4.3 kW
4.0
2.0 IC = 100 mA
RS = 1.0 kW
2.0
1.0
0 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MOTOROLA
Quad Darlington
Transistor MPQ6426
NPN Silicon
14 13 12 11 10 9 8
NPN
1 2 3 4 5 6 7
MAXIMUM RATINGS 14

TO–116
Four Die
Equal
Each Die Power
Total Device Dissipation @ TA = 25°C(1) PD 500 900 mW
Total Device Dissipation @ TC = 25°C PD 825 2400 mW
Temperature Range
Characteristic Junction to Junction to Unit
Case Ambient
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) 30 —
(IC = 100 mAdc, IE = 0) 40 —
(IE = 10 mAdc, IC = 0) 12 —
(VCB = 30 Vdc, IE = 0) — 100
(VEB = 10 Vdc, IC = 0) — 100
300 ms; Duty Cycle v
2.0%.

MPQ6426
(IC = 10 mAdc, VCE = 5.0 Vdc) 5000 —
(IC = 100 mAdc, VCE = 5.0 Vdc) 10,000 —
(IC = 100 mAdc, IB = 0.1 mAdc) — 1.5
(IC = 100 mAdc, VCE = 5.0 Vdc) — 2.0

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 125 —
(VCB = 10 Vdc, IE = 0, f =1.0 MHz) — 8.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) — 15

MPQ6426
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
200 RS ≈ 0 1.0
0.7
i n , NOISE CURRENT (pA)

e n , NOISE VOLTAGE (nV)
0.5
100 IC = 1.0 mA
10 mA 0.3
50 0.2
100 mA
0.1 100 mA
20 IC = 1.0 mA
0.07 10 mA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14
V T , TOTAL WIDEBAND NOISE VOLTAGE (nV)
BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz

100
IC = 10 mA
10
70 10 mA
8.0
100 mA
50
6.0
30 100 mA
4.0 IC = 1.0 mA
20
1.0 mA 2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW)
20 4.0
VCE = 5.0 V
h fe , SMALL–SIGNAL CURRENT GAIN
f = 100 MHz
TJ = 25°C
2.0 TJ = 25°C
C, CAPACITANCE (pF)
10
7.0 Cib
1.0
Cob 0.8
5.0
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
Quad Complementary Pair MPQ6700

Transistor
NPN/PNP Silicon 14 13 12 11 10 9 8
MPQ6502
COMPLEMENTARY For Specifications,
See MPQ6001 Data
1 2 3 4 5 6 7
TYPE B MPQ6600A1
For Specifications,
See MPQ6100A Data
MAXIMUM RATINGS
Voltage and current are
Rating Symbol Value Unit negative for PNP transistors
Collector – Base Voltage VCBO 40 Vdc Motorola Preferred Device

Four
Each Transistors
@ TA = 25°C(1) 500 900 mW 14
Derate above 25°C 4.0 7.2 mW/°C 1
@ TC = 25°C 825 2400 mW CASE 646–06, STYLE 1
Derate above 25°C 6.7 19.2 mW/°C TO–116
Operating and Storage Junction TJ, Tstg –55 to +150 °C TYPE B
Temperature Range
Case Ambient
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) 40 —
(IC = 10 mAdc, IE = 0) 40 —
(IE = 10 mAdc, IC = 0) 5.0 —
(VCB = 30 Vdc, IE = 0) — 50
(VEB = 4.0 Vdc, IC = 0) — 50

MPQ6700
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 30 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.25
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.9

Current – Gain — Bandwidth Product(2) fT MHz
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) — 4.5
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP — 10
NPN — 8.0

MPQ6700
500 500
TJ = 125°C
300 300
200 TJ = 125°C 200

25°C
100 100
70 –55°C 70
50 50 25°C –55°C
30 30
20 20
VCE = –1.0 V
VCE = 1.0 V
10 10 VCE = –5.0 V
VCE = 5.0 V
7.0 7.0
5.0 5.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
Figure 1. DC Current Gain Figure 2. DC Current Gain
1.0 1.0
TJ = 25°C VBE(sat) @ IC/IB = 10 TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 0.6 VBE(on) @ VCE = –1.0 V
0.4 0.4
0.2 VCE(sat) @ IC/IB = 10 0.2

0 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
Figure 3. “ON” Voltage Figure 4. “ON” Voltage
+2.0 +2.0
q V , TEMPERATURE COEFFICIENT (mV/°C)
* APPLIES FOR IC/IB ≤ hFE/2.0

+1.0 +1.0
25°C TO 125°C
25°C TO 125°C
*qVC FOR VCE(sat) *qVC FOR VCE(sat)
0 0
–55°C TO 25°C –55°C TO 25°C
–1.0 25°C TO 125°C –1.0 25°C TO 125°C
qVB FOR VBE qVB FOR VBE

–55°C TO 25°C –55°C TO 25°C
–2.0 –2.0
–3.0 –3.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
Figure 5. Temperature Coefficients Figure 6. Temperature Coefficients

MPQ6700
1.0 –1.0
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)

TJ = 25°C TJ = 25°C
0.8 –0.8
IC = 1.0 mA 10 mA 50 mA 100 mA IC = –1.0 mA –10 mA –50 mA –100 mA

0.6 –0.6
0.4 –0.4
0.2 –0.2
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.005 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region Figure 8. Collector Saturation Region
500 500
300 IC/IB = 10 300 tr @ VCC = –40 V IC/IB = 10
200 TJ = 25°C 200 TJ = 25°C
100 100
t, TIME (ns)
t, TIME (ns)
70 70
50 50
tr @ VCC = 3.0 V
30 30
20 40 V 20
Tr @ VCC = –3.0 V
2.0 V –2.0 V
10 10
VBE(off) = 0
7.0 7.0 td @ VBE(off) = 0
5.0 5.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200
Figure 9. Turn–On Time Figure 10. Turn–On Time
500 500
t′s = ts = 1/8 tf t′s = ts – 1/8 tf
300 VCC = 3.0 V 300
IC/IB = 20 VCC = –40 V
200 IB1 = IB2 200 IB1 = IB2
TJ = 25°C
100 IC/IB = 10 100 IC/IB = 10
t, TIME (ns)
t, TIME (ns)
70 20 70
50 IC/IB = 20 50 IC/IB = 20
30 tf @ IC/IB = 10 30 tf @ IC/IB = 10
20 20
10 10
7.0 7.0
5.0 5.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200
Figure 11. Turn–Off Time Figure 12. Turn–Off Time

MPQ6700

500 700
TJ = 25°C
TJ = 25°C 500 VCE = –20 V
300 VCE = 20 V f = 100 MHz
f = 100 MHz
200 300
150
200
100
70 100
50 70
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30
Figure 13. Current–Gain — Bandwidth Product Figure 14. Current–Gain — Bandwidth Product
7.0 10
TJ = 25°C
5.0 TJ = 25°C 7.0
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
5.0
3.0 Cib
Cib
3.0
2.0
1.5 2.0
Cob
Cob
1.0
0.7 1.0
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 60 –0.04 –0.1 –0.2 –0.4 –1.0 –2.0 –4.0 –10 –20 –40

MOTOROLA

Transistor MPQ6842
NPN/PNP Silicon 14 13 12 11 10 9 8
COMPLEMENTARY Voltage and current are

negative for PNP transistors
1 2 3 4 5 6 7
TYPE B
MAXIMUM RATINGS
14
1
Four CASE 646–06, STYLE 1
Each Transistors TO–116
Transistor Equal Power TYPE B
@ TA = 25°C(1) 500 900 mW
@ TC = 25°C 825 2400 mW
Temperature Range
Case Ambient
Q1–Q2 or Q3–Q4 2.0 26 %

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) 30 — —
(IC = 10 mAdc, IE = 0) 30 — —
(IE = 10 mAdc, IC = 0) 4.0 — —
(VCB = 20 Vdc, IE = 0) — — 50
(VEB = 3.0 Vdc, IE = 0) — — 50
2.0%.

MPQ6842
(IC = 0.5 mAdc, VCE = 1.0 Vdc) 30 — —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 50 — —
(IC = 10 mAdc, VCE = 1.0 Vdc) 70 — —
(IC = 0.5 mAdc, IB = 0.05 mAdc, 0°C ≤ T ≤ 70°C) — 0.05 0.15
(IC = 0.5 mAdc, IB = 0.05 mAdc) — 0.65 0.9

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 200 350 —
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) — 3.0 4.5
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP — 5.0 10
NPN — 4.0 8.0
SWITCHING CHARACTERISTICS (TA = 25°C, VCC = 5.0 Vdc)

Propagation Delay Time ns
(50% Points TP1 to TP3) tPLH — 15 25
(50% Points TP2 to TP4) tPHL — 6.0 15
Rise Time tr ns
(0.3 V to 4.7 V, TP3 or TP4) 5.0 25 35
Fall Time tf ns
(4.7 V to 0.3 V, TP3 or TP4) 5.0 10 20

MPQ6842
500 500
TJ = 125°C
300 300
200 TJ = 125°C 200

25°C
100 100
70 –55°C 70
50 50 25°C –55°C
30 30
20 20
VCE = –1.0 V
VCE = 1.0 V
10 10 VCE = –5.0 V
VCE = 5.0 V
7.0 7.0
5.0 5.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
1.0 –1.0
TJ = 25°C VBE(sat) @ IC/IB = 10 TJ = 25°C
0.8 –0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 –0.6 VBE(on) @ VCE = 1.0 V
0.4 –0.4
0.2 VCE(sat) @ IC/IB = 10 –0.2

0 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –4.0 –10 –20 –40 –100
Figure 3. “ON” Voltage Figure 4. “ON” Voltage
+2.0 +2.0

+1.0 +1.0
25°C TO 125°C
25°C TO 125°C
*qVC FOR VCE(sat) *qVC FOR VCE(sat)
0 0
–55°C TO 25°C –55°C TO 25°C
–1.0 25°C TO 125°C –1.0 25°C TO 125°C
qVB FOR VBE qVB FOR VBE

–55°C TO 25°C –55°C TO 25°C
–2.0 –2.0
–3.0 –3.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

MPQ6842
1.0 –1.0

TJ = 25°C TJ = 25°C
0.8 –0.8
IC = 1.0 mA 10 mA 50 mA 100 mA IC = –1.0 mA –10 mA –50 mA –100 mA

0.6 –0.6
0.4 –0.4
0.2 –0.2
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.005 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
Figure 7. Collector Saturation Region Figure 8. Collector Saturation Region
VCC
33 pF +5 V
1k
5 0.1 mF CERAMIC
6
4.7 k 7
1/4 MC3001 (74H08)

22 NOTES:
TP3 1. Unless otherwise noted, all resistors carbon composition
1/ W ±5%, all capacitors dipped mica ±2%.
4
68 pF 10 2. Use short interconnect wiring with good power and
TP1 160 pF ground buses.
3. TP1 thru TP4 are coaxial connectors to accept scope
1
2 probe tip and provide a good ground.
3 4. Device under test is MPQ6842.
10 k 5. 160 pF load does not include stray or scope probe
PULSE
GENERATOR VCC capacitance.
0 TO 5 V 6. Scope probe resistance > 5 kW.
51 33 pF +5 V
Scope probe capacitance < 10 pF.
tr, tf ≤ 2 ns
PW ≈ 200 ns 1 k 10
PERIOD ≈ 1000 ns 0.1 mF CERAMIC
9
4.7 k 8
TP1 OR TP2 50%
1/4 MC3000 (74H00) 22
TP4 tPHL tPLH
68 pF 10
TP2 160 pF
4.7 V 50%
14 0.3 V
TP3 OR TP4
13 tr
12 tf
10 k
Figure 9. Switching Times Test Circuit and Waveforms

MOTOROLA
Quad Amplifier MPQ7041

Transistors MPQ7042
NPN Silicon 14 13 12 11
COMPLEMENTARY
10 9 8
MPQ7043*
1 2 3 4 5 6 7
TYPE B
MAXIMUM RATINGS
Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit
Collector – Emitter Voltage VCEO 150 200 250 Vdc
14
1
Collector Current—Continuous IC 500 mAdc CASE 646–06, STYLE 1
TO–116
Each Die Four Die
Equal Power
@ TA = 25°C 750 1700 mW
@ TC = 25°C 1.25 3.2 Watts
Temperature Range
Case Ambient
Q1–Q2 or Q3–Q4 5.0 10 %

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MPQ7041 150 — —
MPQ7042 200 — —
MPQ7043 250 — —
(IC = 100 mAdc, IE = 0) MPQ7041 150 — —
MPQ7042 200 — —
MPQ7043 250 — —
(IE = 100 mAdc, IC = 0) 5.0 — —
(VCB = 120 Vdc, IE = 0) MPQ7041 — — 100
(VCB = 150 Vdc, IE = 0) MPQ7042 — — 100
(VCB = 180 Vdc, IE = 0) MPQ7043 — — 100

MPQ7041 MPQ7042 MPQ7043
Characteristic Symbol Min Max Max Unit
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 45 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 60 —
(IC = 30 mAdc, VCE = 10 Vdc) 40 80 —
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.3 0.5
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.7 0.9

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 50 80 —
(VCB = 20 Vdc, IE = 0, f =1.0 MHz) — 2.5 5.0
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) — 40 50
DC CHARACTERISTICS
200 1.4
VCE = 10 V TJ = 125°C TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
100 25°C 1.0

70
–55°C
50 0.6 VBE(on) @ IC/IB = 10 V
0.4
30
5.0
20 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
2.5
2.0 IC/IB = 10
1.5
1.0
25°C TO 125°C
0
–55°C TO 25°C
–0.5
–1.0
–55°C TO 125°C
–1.5 qVB FOR VBE
–2.0
–2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA

Transistor MPQ7051
NPN/PNP Silicon 14 13 12 11 10 9 8
COMPLEMENTARY
1 2 3 4 5 6 7 negative for PNP transistors
TYPE B
MAXIMUM RATINGS
Collector – Base Voltage VCBO 150 Vdc 14
Emitter – Base Voltage VEBO 5.0 Vdc 1

Four Die
TO–116
Equal
TYPE B
Each Die Power
Total Device Dissipation @ TA = 25°C PD 750 1700 mW
Total Device Dissipation @ TC = 25°C PD 1.25 3.2 Watts
Temperature Range
Case Ambient
Q1–Q2 or Q3–Q4 5.0 10 %

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) 150 —
(IC = 100 mAdc, IE = 0) 150 —
(IE = 100 mAdc, IC = 0) 5.0 —
(VCB = 120 Vdc, IE = 0) — 250
(VEB = 3.0 Vdc, IC = 0) — 100

MPQ7051
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 35 —
(IC = 30 mAdc, VCE = 10 Vdc) 25 —
(IC = 20 mAdc, IB = 2.0 mAdc) — 0.7
IC = 20 mAdc, IB = 2.0 mAdc) — 0.9

(VCB = 20 Vdc, IC = 0, f =1.0 MHz) — 6.0
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) NPN — 50
PNP — 75

MPQ7051
DC CHARACTERISTICS
200 200
VCE = 10 V TJ = 125°C VCE = –10 V TJ = 125°C

25°C
100 25°C 100
70 70 –55°C
–55°C
50 50
30 30
20 20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
1.4 –1.4
TJ = 25°C TJ = 25°C
1.2 –1.2
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0 –1.0
0.6 VBE(on) @ IC/IB = 10 V –0.6 VBE(on) @ VCE = –10 V
0.4 –0.4
5.0
5.0
0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
Figure 3. “ON” Voltages Figure 4. “ON” Voltages
2.5 2.5
2.0 IC/IB = 10 2.0 IC/IB = 10
1.5 1.5
25°C TO 125°C
1.0 1.0
25°C TO 125°C
0.5 0.5 qVC FOR VCE(sat)
qVC FOR VCE(sat)
–55°C TO 25°C
0 0
–55°C TO 25°C
–0.5 –0.5
–1.0 –1.0
–55°C TO 125°C –55°C TO 125°C
–1.5 qVB FOR VBE –1.5 qVB FOR VBE
–2.0 –2.0
–2.5 –2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100

MOTOROLA
Quad Amplifier MPQ7091

Transistors MPQ7093*
PNP Silicon 14 13 12 11 10 9 8
COMPLEMENTARY
1 2 3 4 5 6 7
TYPE B
MAXIMUM RATINGS
Rating Symbol MPQ7091 MPQ7093 Unit
Collector – Base Voltage VCBO –150 –250 Vdc 14
Emitter – Base Voltage VEBO –5.0 Vdc 1

Four Die TO–116
Equal
Each Die Power
@ TA = 25°C 750 1700 mW
@ TC = 25°C 1.25 3.2 Watts
Temperature Range
Case Ambient
Q1–Q2 or Q3–Q4 5.0 10 %

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) MPQ7091 –150 — —
MPQ7093 –250 — —
(IC = –100 mAdc, IE = 0) MPQ7091 –150 — —
MPQ7093 –250 — —
(IE = –100 mAdc, IC = 0) –5.0 — —
(VCB = –120 Vdc, IE = 0) MPQ7091 — — –250
MPQ7093 — — –250
(VEB = –3.0 Vdc, IC = 0) — — –100

MPQ7091 MPQ7093
Characteristic Symbol Min Max Max Unit
ON CHARACTERISTICS
(IC = –1.0 mAdc, VCE = –10 Vdc) 25 40 —
(IC = –10 mAdc, VCE = –10 Vdc) 35 55 —
(IC = –30 mAdc, VCE = –10 Vdc) 25 50 —
(IC = –20 mAdc, IB = –2.0 mAdc) — –0.3 –0.5
(IC = –20 mAdc, IB = –2.0 mAdc) — –0.7 –0.9

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) 50 70 —
(VCB = –20 Vdc, IE = 0, f =1.0 MHz) — 3.0 5.0
(VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz) — 60 75
DC CHARACTERISTICS
200 –1.4
VCE = –10 V TJ = 125°C TJ = 25°C
–1.2
25°C
V, VOLTAGE (VOLTS)
100 –1.0
–0.8 VBE(sat) @ IC/IB = 10

70 –55°C
–0.6 VBE(on) @ VCE = –10 V

50
–0.4
30 5.0
–0.2 VCE(sat) @ IC/IB = 10
20 0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
2.5
2.0 IC/IB = 10
1.5
25°C TO 125°C
1.0
–55°C TO 25°C
0
–0.5
–1.0
–55°C TO 125°C
–1.5 qVB FOR VBE
–2.0
–2.5
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100

MOTOROLA
Chopper Transistor
PNP Silicon MPS404A
COLLECTOR Motorola Preferred Device
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
3
TO–92 (TO–226AA)
Emitter – Base Voltage VEBO –25 Vdc
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO –25 — Vdc
(IE = –10 mAdc, IC = 0)
(VCB = –10 Vdc, IE = 0)
(VBE = –10 Vdc, IC = 0)

MPS404A
ON CHARACTERISTICS
(IC = –12 mAdc, VCE = –0.15 Vdc)
(IC = –12 mAdc, IB = –0.4 mAdc) — –0.15
(IC = –24 mAdc, IB = –1.0 mAdc) — –0.2
(IC = –12 mAdc, IB = –0.4 mAdc) — –0.85
(IC = –24 mAdc, IB = –1.0 mAdc) — –1.0

Common–Base Cutoff Frequency fob 4.0 — MHz
(IC = –1.0 mAdc, VCB = 6.0 Vdc)
Output Capacitance Cobo — 20 pF
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
–100 –0.9
VBC, BASE–COLLECTOR VOLTAGE (VOLTS)
VEC , EMITTER–COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR–EMITTER VOLTAGE (mV)
NORMAL MODE NORMAL MODE

INVERTED MODE TJ = 25°C

INVERTED MODE
–80 TJ = 25°C –0.82
VBC(sat) @ IE/IB = 2
–60 –0.74
–40 –0.66 VBE(on) @ VCE = –1.0 V
IC/IB = 2.0
–20 VEC(sat) @ IE/IB = 2.0 –0.58
0 –0.50
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
IE, EMITTER CURRENT (mA) IE, EMITTER CURRENT (mA)
Figure 1. Collector–Emitter Voltage Figure 2. Base “On” Voltage

MPS404A
NORMAL MODE INVERTED MODE
200 10
TJ = 125°C
7.0 25°C
100 25°C

80 5.0 –55°C
60
–55°C
40 3.0
30
2.0
20
1.5
10 1.0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
Figure 3. DC Current Gain @ VCE = –0.15 Vdc Figure 4. DC Current Gain @ VEC = –0.15 Vdc
600 10
400 7.0 TJ = 125°C

300 TJ = 125°C

25°C
5.0
200 25°C
–55°C
3.0
100 –55°C
80
2.0
60
40
30 1.0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
Figure 5. DC Current Gain @ VCE = –1.0 Vdc Figure 6. DC Current Gain @ VEC = –1.0 Vdc
VEC , EMITTER–COLLECTOR VOLTAGE (VOLTS)
–0.5 –0.5
TJ = 25°C TJ = 25°C
–0.4 –0.4
IC = –2.0 mA –10 mA –50 mA IE = –0.5 mA –2.0 mA –10 mA –50 mA

–0.3 –0.3
–0.2 –0.2
–0.1 –0.1
0 0
–0.005 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
Figure 7. Collector Saturation Region Figure 8. Emitter Saturation Region

MPS404A
100 20
NOTE: The dynamic resistance between the emitter and
70 NOTE: collector is measured with the device operated in
rec(on), EMITTER–COLLECTOR “ON”
NOTE: the Inverted Mode.

50 TJ = 25°C
RESISTANCE (OHMS)
C, CAPACITANCE (pF)
10
30 Ie = 100 µA RMS
f = 1.0 kHz 7.0 Cob
20 TJ = 25°C
IE = 0 5.0
Cib
10
3.0
7.0
5.0 2.0
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Emitter–Collector “On” Resistance Figure 10. Capacitance
2.0 k 1.0 k
VCC = –10 V VCC = –10 V
1.0 k IC/IB = 0 700 IC/IB = 0
TJ = 25°C ts IB1 = IB2
700
TJ = 25°C
500 500
300
t, TIME (ns)
t, TIME (ns)
200 tr 300 tf
100
200
70
50
td @ VBE(off) = –1.4 V
30
20 100
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
VBB VCC = –10 V
RBB RC (560 Ω)
1.0 k 1.0 k VCC
(–6.0 V) C1
TO SCOPE
0.1 µF RB (0–250 pF)
Vin OUTPUT
10 k RB*
INPUT Vin (5.6 kΩ)
51
MEASUREMENT PROCEDURE VOLTAGE WAVEFORMS

Vin VBB C1 is increased until the toff time of >5.0 µs
Voltages and resistor values shown 0
(Volts) (Volts) the output waveform is decreased to Vin tr, tf < 15 ns
are for IC = 10 mA. IC/IB = 10 and IB1 6.0 V
ton, td and tr –12 +1.4 = IB2. Resistor values changed to ob- 0.2 µs, QS is then calculated by
tain curves in Figures 11 and 12. QS = C1 Vin. Vout
toff, ts and tf +20.6 –11.6 10%
QS3 or QS7 by B–Line Electronics 6.0 V
or equivalent may also be used. toff
Figure 13. Switching Time Test Circuit Figure 14. Stored Base Charge Test Circuit

MOTOROLA
Amplifier Transistors NPN

MPS650
MPS651 *
PNP
COLLECTOR COLLECTOR
3 3
MPS750
MPS751 *
2 2
BASE BASE
NPN PNP
1 1 negative for PNP transistors
EMITTER EMITTER
*Motorola Preferred Devices
MAXIMUM RATINGS
MPS650 MPS651
Rating Symbol MPS750 MPS751 Unit
Collector – Emitter Voltage VCE 40 60 Vdc
Collector – Base Voltage VCB 60 80 Vdc
Emitter – Base Voltage VEB 5.0 Vdc 1
2
Collector Current — Continuous IC 2.0 Adc 3

Derate above 25°C 5.0 mW/°C CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Total Power Dissipation @ TC = 25°C PD 1.5 Watt
Temperature Range
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPS650, MPS750 40 —
MPS651, MPS751 60 —
(IC = 100 µAdc, IE = 0 ) MPS650, MPS750 60 —
MPS651, MPS751 80 —
(IC = 0, IE = 10 µAdc)
(VCB = 60 Vdc, IE = 0) MPS650, MPS750 — 0.1
(VCB = 80 Vdc, IE = 0) MPS651, MPS751 — 0.1
(VEB = 4.0 V, IC = 0)

NPN MPS650 MPS651 PNP MPS750 MPS751
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
(IC = 50 mA, VCE = 2.0 V) 75 —
(IC = 500 mA, VCE = 2.0 V) 75 —
(IC = 1.0 A, VCE = 2.0 V) 75 —
(IC = 2.0 A, VCE = 2.0 V) 40 —
(IC = 2.0 A, IB = 200 mA) — 0.5
(IC = 1.0 A, IB = 100 mA) — 0.3
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) — 1.0 Vdc
Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) — 1.2 Vdc

NPN PNP
300 250
TJ = 125°C
270 VCE = 2.0 V 225 VCE = –2.0 V
240 TJ = 125°C 200
210 175
25°C
180 150
25°C
150 125
120 100
– 55°C – 55°C
90 75
60 50
30 25
0 0
10 20 50 100 200 500 1.0 A 2.0 A 4.0 A –10 – 20 – 50 –10 – 200 – 500 –1.0 A –2.0 A –4.0 A
IC, COLLECTOR CURRENT (mA) 0
Figure 1. MPS650, MPS651 Figure 2. MPS750, MPS751

Typical DC Current Gain Typical DC Current Gain
NPN PNP
2.0 –2.0
1.8 –1.8
1.6 –1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.4 –1.4
1.2 –1.2
0.8 –0.8
VBE(on) @ VCE = 2.0 V VBE(on) @ VCE = 2.0 V
0.6 –0.6
0.4 –0.4
0 0
50 100 200 500 1.0 A 2.0 A 4.0 A –50 –10 –20 –50 –1.0 A –2.0 A –4.0 A
IC, COLLECTOR CURRENT (mA) 0 IC, COLLECTOR
0 0
CURRENT (mA)

On Voltages On Voltages

NPN PNP

1.0 –1.0
0.9 –0.9
0.8 TJ = 25°C –0.8 TJ = 25°C
0.7 –0.7
0.6 –0.6
0.5 –0.5
0.4 –0.4
IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A IC = –500 mA IC = –2.0 A
0.3 –0.3
0.2 –0.2
IC = –10 mA IC = –100 mA
0.1 –0.1
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IB, BASE CURRENT (mA) 5 IB, BASE CURRENT (mA)

Collector Saturation Region Collector Saturation Region
NPN PNP
10 –10
4.0 –4.0
100 µs 100 µs
IC, COLLECTOR CURRENT
2.0 –2.0
1.0 ms 1.0 ms
1.0 –1.0
MPS65
MPS75
0.5 0 –0.5
MPS65 0
MPS75
0.2 1 –0.2 1
TA = 25°C TC = 25°C TA = 25°C TC = 25°C
0.1 –0.1
0.05 –0.05
WIRE LIMIT WIRE LIMIT
0.02 THERMAL LIMIT –0.02 THERMAL LIMIT
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT
0.01 –0.01
1.0 2.0 5.0 10 20 50 100 –1.0 –2.0 –5.0 –10 –20 –50 –100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. MPS650, MPS651 SOA, Figure 8. MPS750, MPS751 SOA,

Safe Operating Area Safe Operating Area

MOTOROLA
Amplifier Transistors MPS918*

NPN Silicon
MPS3563
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 3.0 mAdc, IB = 0) MPS918 15 —
MPS3563 12 —
(IC = 1.0 mAdc, IE = 0) MPS918 30 —
(IC = 100 mAdc, IE = 0) MPS3563 30 —
(IE = 10 mAdc, IC = 0) MPS918 3.0 —
MPS3563 2.0 —
(VCB = 15 Vdc, IE = 0) MPS918 — 10
MPS3563 — 50
1.0%.

MPS918 MPS3563
ON CHARACTERISTICS
(IC = 3.0 mAdc, VCE = 1.0 Vdc) MPS918 20 —
(IC = 8.0 mAdc, VCE = 10 Vdc) MPS3563 20 200
(IC = 10 mAdc, IB = 1.0 mAdc) MPS918
(IC = 10 mAdc, IB = 1.0 mAdc) MPS918

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS918 600 —
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS3563 600 1500
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz) MPS918 — 3.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS918
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS3563
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kΩ, f = 60 MHz) MPS918
FUNCTIONAL TEST
Common–Emitter Amplifier Power Gain Gpe dB
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) MPS918 15 —
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) MPS3563 14 —
(Gfd + Gre t–20 dB)
Power Output Pout 30 — mW
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) MPS918
Oscillator Collector Efficiency η 25 — %
(IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) MPS918

MOTOROLA

NPN Silicon MPS2222
MPS2222A*
COLLECTOR
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating Symbol MPS2222 MPS2222A Unit 2
3
Collector – Base Voltage VCBO 60 75 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage MPS2222 V(BR)CEO 30 — Vdc
(IC = 10 mAdc, IB = 0) MPS2222A 40 —
Collector – Base Breakdown Voltage MPS2222 V(BR)CBO 60 — Vdc
(IC = 10 mAdc, IE = 0) MPS2222A 75 —
Emitter – Base Breakdown Voltage MPS2222 V(BR)EBO 5.0 — Vdc
(IE = 10 mAdc, IC = 0) MPS2222A 6.0 —
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222A
(VCB = 50 Vdc, IE = 0) MPS2222 — 0.01
(VCB = 60 Vdc, IE = 0) MPS2222A — 0.01
(VCB = 50 Vdc, IE = 0, TA = 125°C) MPS2222 — 10
(VCB = 50 Vdc, IE = 0, TA = 125°C) MPS2222A — 10
(VEB = 3.0 Vdc, IC = 0) MPS2222A
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222A

MPS2222 MPS2222A
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) MPS2222A only 35 —
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50 —
(IC = 500 mAdc, VCE = 10 Vdc)(1) MPS2222 30 —
MPS2222A 40 —
(IC = 150 mAdc, IB = 15 mAdc) MPS2222 — 0.4
MPS2222A — 0.3

MPS2222A — 1.0
MPS2222A 0.6 1.2

MPS2222A — 2.0
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MPS2222 250 —
MPS2222A 300 —
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS2222 — 30
MPS2222A — 25
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 0.25 1.25
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A — 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A — 4.0
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 75 375
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A 25 200
Collector Base Time Constant rb′Cc — 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MPS2222A
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MPS2222A
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time ( CC = 30 Vdc, VBE(off) = –0.5 Vdc,
(V td — 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns
(V ts — 225 ns
Fall Time IB1 = IB2 = 15 mAdc) (Figure 2) tf — 60 ns

MPS2222 MPS2222A
+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200
0 0
1 kΩ –14 V 1k CS* < 10 pF
–2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

*Total shunt capacitance of test jig, connectors, and oscilloscope.
1000
700
500 TJ = 125°C
300
200
25°C
100
70
–55°C
50
30 VCE = 1.0 V
20 VCE = 10 V
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k

1.0
TJ = 25°C
0.8
0.6 IC = 1.0 mA 10 mA 150 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

MPS2222 MPS2222A
200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts – 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
100
td @ VEB(off) = 0
t, TIME (ns)
30
t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
10 10
500 µA, RS = 200 Ω IC = 50 µA

100 µA, RS = 2.0 kΩ 100 µA
6.0 50 µA, RS = 4.0 kΩ 6.0 500 µA
1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)
10 200
7.0
5.0
100
Ccb
3.0 70
2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MPS2222 MPS2222A
1.0 +0.5
TJ = 25°C

V, VOLTAGE (VOLTS)
1.0 V – 0.5
0.6
VBE(on) @ VCE = 10 V – 1.0
0.4
– 1.5
0.2
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
Switching Transistors
NPN Silicon MPS2369
MPS2369A*
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPS2369A
(IC = 10 µAdc, VBE = 0) MPS2369,A
(IC = 10 mAdc, IE = 0) MPS2369,A
(IE = 10 mAdc, IC = 0) MPS2369,A
(VCB = 20 Vdc, IE = 0) — — 0.4
(VCB = 20 Vdc, IE = 0, TA = 125°C) MPS2369,A — — 30
Collector Cutoff Current ICES — — 0.4 µAdc
(VCE = 20 Vdc, VBE = 0) MPS2369,A

MPS2369 MPS2369A
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1.0 Vdc) MPS2369A — — 120
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C) MPS2369 20 — —
(IC = 10 mAdc, VCE = 1.0 Vdc) MPS2369 40 — 120
(IC = 10 mAdc, VCE = 0.35 Vdc) MPS2369A 40 — —
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) MPS2369A 20 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) MPS2369 20 — —
(IC = 10 mAdc, IB = 1.0 mAdc) MPS2369 — — 0.25
(IC = 10 mAdc, IB = 1.0 mAdc) MPS2369A — — 0.20
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MPS2369A — — 0.30
(IC = 100 mAdc, IB = 10 mAdc) MPS2369A — — 0.50
(IC = 10 mAdc, IB = 1.0 mAdc) MPS2369 0.7 — 0.85
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MPS2369A 0.5 — —
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) MPS2369A — — 1.02
(IC = 100 mAdc, IB = 10 mAdc) MPS2369A — — 1.60

Output Capacitance Cobo — — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MPS2369,A
Small–Signal Current Gain hfe 5.0 — — —
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS2369,A
Storage Time ts — 5.0 13 ns
(IB1 = IB2 = IC = 10 mAdc) (Figure 3) MPS2369,A
Turn–On Time ton — 8.0 12 ns

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
(Figure 1) MPS2369,A
Turn–Off Time toff — 10 18 ns
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc,
IB2 = 1.5 mAdc) (Figure 2) MPS2369,A

MPS2369 MPS2369A
t1 3.0 V
+10.6 V 270
0
–1.5 V
< 1.0 ns 3.3 k CS* < 4.0 pF
DUTY CYCLE = 2.0%
Figure 1. ton Circuit
t1
+10.75 V 3.0 V
270
0
–4.15 V
< 1.0 ns 3.3 k CS* < 4.0 pF
DUTY CYCLE = 2.0%
Figure 2. toff Circuit
t1 10 V
+6.0 V 980
0
–4.0 V
500 CS* < 3.0 pF
< 1.0 ns
DUTY CYCLE = 2.0%
Figure 3. Storage Test Circuit
* Total shunt capacitance of test jig and connectors.

MOTOROLA
General Purpose Transistors MPS2907

PNP Silicon
MPS2907A*
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
Rating Symbol MPS2907 MPS2907A Unit 2
3
TO–92 (TO–226AA)
@ TA = 25°C 625 mW
@ TC = 25°C 1.5 Watts
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) MPS2907 V(BR)CEO –40 — Vdc
(IC = –10 mAdc, IB = 0) MPS2907A –60 —
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –50 Vdc, IE = 0) MPS2907 — –0.02
MPS2907A — –0.01
(VCB = –50 Vdc, IE = 0, TA = 150°C) MPS2907 — –20
MPS2907A — –10
Base Current IB — –50 nAdc


MPS2907 MPS2907A
ON CHARACTERISTICS
(IC = –0.1 mAdc, VCE = –10 Vdc) MPS2907 35 —
MPS2907A 75 —
(IC = –1.0 mAdc, VCE = –10 Vdc) MPS2907 50 —
MPS2907A 100 —
(IC = –10 mAdc, VCE = –10 Vdc) MPS2907 75 —
MPS2907A 100 —
(IC = –150 mAdc, VCE = –10 Vdc)(1) MPS2907, MPS2907A 100 300
(IC = –500 mAdc, VCE = –10 Vdc)(1) MPS2907 30 —
MPS2907A 50 —
(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –1.6
(IC = –150 mAdc, IB = –15 mAdc) — –1.3
(IC = –500 mAdc, IB = –50 mAdc) — –2.6

Current – Gain — Bandwidth Product(1), (2) fT 200 — MHz
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time (VCC = –30 Vdc, IC = –150 mAdc, ton — 45 ns
IB1 = –15
15 mAdc)
Ad ) (Figures
(Fi 1 and
d 5)
Rise Time tr — 40 ns
Turn–Off Time (VCC = –6.0 Vdc, IC = –150 mAdc, toff — 100 ns
Ad ) (Fi
IB1 = IB2 = 15 mAdc) (Figure 2)

300 ms, Duty Cycle 2.0%. v
INPUT INPUT
Zo = 50 Ω –30 V Zo = 50 Ω +15 V –6.0 V
1.0 k 37
P.W. < 200 ns P.W. < 200 ns
1.0 k 1.0 k
–16 V 50 –30 V 50 1N916
200 ns 200 ns

MPS2907 MPS2907A
3.0
VCE = –1.0 V
2.0 VCE = –10 V TJ = 125°C
25°C
1.0
0.7 – 55°C
0.5
0.3
0.2
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

–1.0
–0.8
IC = –1.0 mA –10 mA –100 mA –500 mA
–0.6
–0.4
–0.2
0
–0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
300 500
200 300 VCC = –30 V
VCC = –30 V
IC/IB = 10 200 IC/IB = 10
100 tr
70 100 TJ = 25°C
50
t, TIME (ns)
t, TIME (ns)
70
30 50
20 t′s = ts – 1/8 tf
30
td @ VBE(off) = 0 V
20
10
7.0 10
5.0 2.0 V
7.0
3.0 5.0
–5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

MPS2907 MPS2907A
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0

6.0 IC = –1.0 mA, Rs = 430 Ω 6.0 IC = –50 µA
–500 µA, Rs = 560 Ω
–100 µA
–50 µA, Rs = 2.7 kΩ
–500 µA
4.0 –100 µA, Rs = 1.6 kΩ 4.0 –1.0 mA
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

30 400
300
20 Ceb
200
C, CAPACITANCE (pF)
10
100
7.0 80 VCE = –20 V
60 TJ = 25°C
5.0 Ccb
40
3.0 30
2.0 20
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
–1.0 +0.5
TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(on) @ VCE = –10 V –0.5

–0.6
–1.0
–0.4
–1.5
–0.2
–2.0 RqVB for VBE
0 –2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

MOTOROLA
Switching Transistor
PNP Silicon
COLLECTOR
MPS3638A
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
3
Collector – Emitter Voltage VCES –25 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CES –25 — Vdc
(IC = –100 mAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(2) VCEO(sus) –25 — Vdc
(IC = –10 mAdc, IB = 0)
(IC = –100 mAdc, IE = 0)
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current ICES mAdc
(VCE = –15 Vdc, VBE = 0) — –0.035
(VCE = –15 Vdc, VBE = 0, TA = –65°C) — –2.0
Emitter Cutoff Current IEBO — –35 nA
(VEB = –3.0 V, IC = 0)
Base Current IB — –0.035 mAdc
(VCE = –15 Vdc, VBE = 0)
300 ms; Duty Cycle v2.0%.
(Replaces MPS3638/D)

MPS3638A
(IC = –1.0 mAdc, VCE = –10 Vdc) 80 —
(IC = –10 mAdc, VCE = –10 Vdc) 100 —
(IC = –50 mAdc, VCE = –1.0 Vdc) 100 —
(IC = –300 mAdc, VCE = –2.0 Vdc) 20 —
(IC = –50 mAdc, IB = –2.5 mAdc) — –0.25
(IC = –300 mAdc, IB = –30 mAdc) — –1.0
(IC = –50 mAdc, IB = –2.5 mAdc) — –1.1
(IC = –300 mAdc, IB = –30 mAdc) –0.80 –2.0

(VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) 150 —
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) — 10
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) — 25
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) — 2000
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) — 15
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 100 —
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) — 1.2
(VCC = –10 Vdc
Vdc, IC = –300 mAdc
mAdc, IB1 = –30 mAdc)
Storage Time ( CC = –10 Vdc, IC = –300 mAdc,
(V ts — 140 ns
Fall Time IB1 = –30 mAdc, IB2 = –30 mAdc) tf — 70 ns
Turn–On Time (IC = –300 mAdc, IB1 = –30 mAdc) ton — 75 ns
Turn–Off Time (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) toff — 170 ns

MPS3638A
– 30 V – 30 V
200 Ω 200 Ω
< 2 ns < 20 ns
+2 V +14 V
0 0
1.0 kΩ 1.0 kΩ CS* < 10 pF
CS* < 10 pF
– 16 V –16 V
10 to 100 µs, 1.0 to 100 µs,
DUTY CYCLE = 2% DUTY CYCLE = 2%
+ 4.0 V
25°C 100°C
30 10
7.0
VCC = 30 V
20 5.0
Ceb IC/IB = 10
3.0
CAPACITANCE (pF)
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
Ccb
5.0 0.5
QT
0.3
QA
0.2
2.0 0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500

MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25°C 100°C
100 100
70 IC/IB = 10 70 VCC = 30 V
50 IC/IB = 10
50
tr @ VCC = 30 V

30 tr @ VCC = 10 V 30
t, TIME (ns)
td @ VBE(off) = 2 V
20 td @ VBE(off) = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
200
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts – 1/8 tf
30
20
10 20 30 50 70 100 200 300 500

MPS3638A
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
f = 1 kHz
8 8

IC = 1.0 mA, RS = 430 Ω
6 6 IC = 50 µA
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ 100 µA
IC = 100 µA, RS = 1.6 kΩ 500 µA
4 4
1.0 mA
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k

h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from the 2N4402 line, and the same units were
hfe and other “h” parameters for this series of transistors. To used to develop the correspondingly–numbered curves on
obtain these curves, a high–gain and a low–gain unit were each graph.
1000 100 k
700 50 k
500
20 k 2N4402 UNIT 1
2N4402 UNIT 2
hfe , CURRENT GAIN
300 10 k
200 5k
2k
100 1k
2N4402 UNIT 1
70 2N4402 UNIT 2 500
50
200
30 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 500
10
5.0 100
2N4402 UNIT 1
2N4402 UNIT 2 50
2.0
20
1.0
10
0.5
5.0
2N4402 UNIT 1
0.2 2.0 2N4402 UNIT 2
0.1 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

MPS3638A
3.0
VCE = 1.0 V
2.0 VCE = 10 V TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 0.5
TJ = 25°C
0
VOLTAGE (VOLTS)
0.5
1.0
0.4
1.5
0.2
2.0 qVS for VBE
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
PNP Silicon
MPS3640
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
1
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –100 µAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1) VCEO(sus) –12 — Vdc
(IC = –10 mAdc, IB = 0)
(IC = –100 mAdc, IE = 0)
(IE = –100 mAdc, IC = 0)
(VCE = –6.0 Vdc, VBE = 0) — –0.01
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C) — –1.0
Base Current IB — –10 nAdc
(VCE = –6.0 Vdc, VEB = 0)

MPS3640
(IC = –10 mAdc, VCE = –0.3 Vdc) 30 120
(IC = –50 mAdc, VCE = –1.0 Vdc) 20 —
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.2
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.6
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C) — –0.25
(IC = –10 mAdc, IB = –0.5 mAdc) –0.75 –0.95
(IC = –10 mAdc, IB = –1.0 mAdc) –0.75 –1.0
(IC = –50 mAdc, IB = –5.0 mAdc) — –1.5
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Delay Time (VCC = –6.0 Vdc, IC = –50 mAdc, VBE(off) = –1.9 Vdc, td — 10 ns
IB1 = –5.0
5 0 mAdc)
Ad )
Storage Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) ts — 20 ns
VBB = +1.9 V VCC = –6.0 V VBB = –6.0 V VCC = 1.5 V
110 130
1.0 k 5.0 k
0 Vout 5.0 V Vout
0.1 µF 680 0.1 µF 5.0 k
–6.8 V Vin 0 Vin
PULSE SOURCE TO SAMPLING SCOPE PULSE SOURCE TO SAMPLING SCOPE
51 INPUT Z ≥ 100 k 51 INPUT Z ≥ 100 k
PULSE WIDTH ≥ 100 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 200 ns RISE TIME ≤ 1.0 ns
Zin = 50 OHMS Zin = 50 OHMS
NOTES: Collector Current = 50 mA, NOTES: Collector Current = 10 mA,
FALL TIME ≤ 1.0 ns FALL TIME ≤ 1.0 ns
NOTES: Turn–On and Turn–Off Time NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA. NOTES: Base Currents = 0.5 mA.
Figure 1. Figure 2.

MPS3640
200 –1.4
VCE = –1.0 V TJ = 25°C
–1.2
TJ = 125°C
100
25°C –1.0 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
70
–0.8
50 –55°C
–0.6
30
–0.4
20
–0.2 VCE(sat) @ IC/IB = 10
10 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
Figure 3. DC Current Gain Figure 4. “On” Voltages

–1.0 +0.5
*APPLIES FOR IC/IB ≤ hFE/4

TJ = 25°C 25°C to 125°C
–0.8 0
IC = –1.0 mA –5.0 mA –20 mA –80 mA RθVC for VCE(sat)
–55°C to 25°C
–0.6 –0.5
–0.4 –1.0
–0.2 –1.5 25°C to 125°C
RθVB for VBE –55°C to 25°C

0 –2.0
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

2000 5.0
TJ = 25°C TJ = 25°C
f = 100 MHz VCE = –10 V
3.0
C, CAPACITANCE (pF)
1000
–1.0 V
800 2.0
Cobo
600 Cibo
400 1.0
0.7
200 0.5
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20

MOTOROLA
NPN Silicon MPS3646
COLLECTOR
3
2
BASE
1
1
EMITTER 2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
— 10 ms Pulse 500
Temperature Range
OFF CHARACTERISTICS
(IC = 100 mAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1) VCEO(sus) 15 — Vdc
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICES mAdc
(VCE = 20 Vdc, VBE = 0) — 0.5
(VCE = 20 Vdc, VBE = 0, TA = 65°C) — 3.0

MPS3646
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) hFE 30 120 —
(IC = 100 mAdc, VCE = 0.5 Vdc) 25 —
(IC = 300 mA, VCE = 1.0 Vdc) 15 —
Collector – Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VCE(sat) — 0.2 Vdc
(IC = 100 mAdc, IB = 10 mAdc) — 0.28
(IC = 300 mAdc, IB = 30 mAdc) — 0.5
(IC = 30 mA, IB = 3.0 mA, TA = 65°C) — 0.3
Base – Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) 0.73 0.95 Vdc
(IC = 100 mAdc, IB = 10 mAdc) — 1.2
(IC = 300 mAdc, IB = 30 mA) — 1.7

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VCC = 10 Vdc,
Vd IC = 300 mAdc,
Ad IB1 = 30 mAdc)
Ad )
(Figure 1)
Turn–Off Time ((VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc)) toff — 28 ns
Fall Time (Figure 1) tf — 15 ns
(VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2)
Figure 1. Switching Time Equivalent Test Circuit
Test VCC
ton toff
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
t1 t1 RC
mA V Ω Ω pF V V V V V1 V3
RB
A 10 3 330 270 4 –1.5 10.55 –4.15 10.70 0 0
0 960 VEB(off) V2 CS
B 10 10 560 4 — — –4.65 6.55 < 2 ns < 2 ns
C 100 10 560 96 12 –2.0 6.35 –4.65 6.55
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%

MPS3646
CURRENT GAIN CHARACTERISTICS
100
MPS3646
70 VCE = 1 V
TJ = 125°C
50
25°C
30 –15°C
– 55°C
20
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
200
MPS3646
TJ = 125°C
VCE = 1 V
25°C
100
–15°C
70
50 – 55°C
30
20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 2. Minimum Current Gain
270 Ω
3V
t1 8 pF C < COPT
+10 V C=0
∆V
0 CS < 4 pF C COPT
<1 ns 9.2 kΩ
PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% TIME
Figure 3. QT Test Circuit Figure 4. Turn–Off Waveform
NOTE 1
When a transistor is held in a conductive state by a base current, IB, If IB were suddenly removed, the transistor would continue to
a charge, QS, is developed or “stored” in the transistor. QS may be conduct until QS is removed from the active regions through an
written: QS = Q1 + QV + QX. external path or through internal recombination. Since the internal
Q1 is the charge required to develop the required collector current. recombination time is long compared to the ultimate capability of a
This charge is primarily a function of alpha cutoff frequency. QV is the transistor, a charge, QT, of opposite polarity, equal in magnitude, can
charge required to charge the collector–base feedback capacity. QX is be stored on an external capacitor, C, to neutralize the internal charge
excess charge resulting from overdrive, i.e., operation in saturation. and considerably reduce the turn–off time of the transistor. Figure 3
The charge required to turn a transistor “on” to the edge of saturation shows the test circuit and Figure 4 the turn–off waveform. Given QT
is the sum of Q1 and QV which is defined as the active region charge, from Figure 13, the external C for worst–case turn–off in any circuit is:
QA. QA = IB1tr when the transistor is driven by a constant current step C = QT/∆V, where ∆V is defined in Figure 3.
IC
(IB1) and IB1 < < .
hFE

MPS3646
“ON” CONDITION CHARACTERISTICS
1.0
MPS3646
TJ = 25°C
0.8
IC = 10 mA 50 mA 100 mA 200 mA
VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0
MPS3646
TJ = 25°C
0.8
IC = 10 mA 50 mA 100 mA 200 mA
VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.2 1.0
IC/IB = 10
Vsat , SATURATION VOLTAGE (VOLTS)
1.0 TJ = 25°C MAX VBE(sat) 0.5 (25°C to 125°C)

qVC for VCE(sat)
0.8 MIN VBE(sat) 0 (– 55°C to 25°C)
0.6 – 0.5
(25°C to 125°C)
0.4 MAX VCE(sat) – 1.0
qVB for VBE
(– 55°C to 25°C)
0.2 – 1.5
0 – 2.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0 40 80 120 160 200
Figure 6. Saturation Voltage Limits Figure 7. Temperature Coefficients

MPS3646
200 200
VCC = 10 V IC/IB = 10
TJ = 25°C TJ = 25°C
100 100
TJ = 125°C
70 70
t d, DELAY TIME (ns)
VCC = 10 V

50 td @ VEB(off) = 3 V
50
30 30
2V
20 20 VCC = 3 V
10 0V 10
7.0 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
Figure 8. Delay Time Figure 9. Rise Time
50 200
TJ = 25°C VCC = 10 V
TJ = 125°C TJ = 25°C
IC/IB = 20 100 TJ = 125°C
30
IC/IB = 10 70
20 50
30 IC/IB = 20
20
10
IC/IB = 10
7.0 ts′ ^ ts – 1/8 tf 10
IB1 = IB2 7.0
5.0 5.0
1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 5.0 10 20 50 100 200
10 1000
MAX 700 IC/IB = 10
TYP TJ = 25°C
500
7.0 Cibo TJ = 125°C
CAPACITANCE (pF)
300
Q, CHARGE (pC)
5.0 200
QT
100
VCC = 3 V
Cobo 70
3.0 50
VCC = 10 V QA
30 VCC = 3 V
2.0 20
0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (Vdc) IC, COLLECTOR CURRENT (mA)
Figure 12. Junction Capacitance Figure 13. Maximum Charge Data

MOTOROLA

NPN Silicon
COLLECTOR MPS3904
3
2
BASE
1
EMITTER
MAXIMUM RATINGS 1
2
3
Collector – Base Voltage VCBO 60 Vdc TO–92 (TO–226AA)

Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 10 µAdc, IE = 0)
(IE = 10 µAdc, IC = 0)
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
REV 1

MPS3904
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 —
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.3
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.1

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie 1.0 10 kΩ
Voltage Feedback Ratio hre 0.5 8.0 X 10–4
Output Admittance hoe 1.0 40 µmhos

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
Delay Time ( CC = 3.0 Vdc, VBE(off) = – 0.5 Vdc,
(V td — 35 ns
Storage Time ( CC = 3.0 Vdc, IC = 10 mAdc,
(V ts — 900 ns
Fall Time IB1 = IB2 = 1.0 mAdc) tf — 90 ns
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

MPS3904
(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

MPS3904
400
200 25°C
– 55°C
100
80
MPS3904
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
MPS3904 TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPS3904
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

MPS3904
TA = 25°C TA = 25°C
7.0 hfe ≈ 200 @ IC = 1.0 mA 70
5.0 50 MPS3904
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPS3904
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
– 40 – 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA

PNP Silicon MPS3906
COLLECTOR
3
2
BASE
1 1
EMITTER 2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current IBL — –50 nAdc
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
REV 1

MPS3906
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 80 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 300
(IC = –50 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 30 —
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.25
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.4
(IC = –10 mAdc, IB = –1.0 mAdc) –0.65 –0.85
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.95

(IC = –10 mAdc, VCE = –20 V, f = 100 MHz)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio hre 1.0 10 X 10– 4
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)
Delay Time ((VCC = –3.0 Vdc, VBE(off) = + 0.5 Vdc, td — 35 ns
Rise Time IC = –10 mAdc, IB1 = 1.0 mAdc) tr — 50 ns
Storage Time (VCC = –3.0 Vdc, IC = –10 mAdc, ts — 600 ns
IB1 = IB2 = –1.0
1 0 mAdc)
Ad )

MPS3906
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

MPS3906
400
TJ = 125°C
25°C
200
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPS3906
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

TA = 25°C TA = 25°C
7.0 MPS3906 70
5.0 hfe ≈ 200 50
@ IC = –1.0 mA MPS3906
3.0 30
hfe ≈ 200
2.0 20 @ IC = 1.0 mA
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPS3906
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
400
1.0 ms 10 µs
100 µs
1.0 s
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40

VCC = 30 V
103
ICBO
AND Example:
100
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
10–1 r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

MOTOROLA
NPN Silicon MPS4124
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Collector – Emitter Voltage VCE 25 Vdc
Total Power Dissipation @ TC = 25°C PD 1.5 W
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mA, IB = 0) 25 —
(IC = 10 mA, IE = 0) 30 —
(IC = 0, IE = 10 mA) 5.0 —
(VCB = 20 V, IE = 0) — 50
(VEB = 3.0 V, IC = 0) — 50

MPS4124
ON CHARACTERISTICS
(IC = 2.0 mA, VCE = 1.0 V) 120 360
(IC = 50 mA, VCE = 1.0 V) 60 —
(IC = 50 mA, IB = 5.0 mA) — 0.3
(IC = 50 mA, IB = 5.0 mA) — 0.95

(IC = 10 mA, VCE = 20 V, f = 100 MHz) 170 —
(VCB = 5.0 V, IE = 0, f = 1.0 MHz) — 4.0
(VEB = 0.5 V, IC = 0, f = 1.0 MHz) — 13.5
(IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) 120 480
Noise Figure NF dB
(IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) — 5.0

MOTOROLA
PNP Silicon MPS4126
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Collector – Emitter Voltage VCE –25 Vdc
Total Power Dissipation @ TC = 25°C PD 1.5 W
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mA, IB = 0) –25 —
(IC = –10 mA, IE = 0) –25 —
(IC = 0, IE = –10 mA) –4.0 —
(VCB = –20 V, IE = 0) — –50
(VEB = –3.0 V, IC = 0) — –50

MPS4126
ON CHARACTERISTICS
(IC = –2.0 mA, VCE = –1.0 V) 120 360
(IC = –50 mA, VCE = –1.0 V) 60 —
(IC = –50 mA, IB = –5.0 mA) — –0.4
(IC = –50 mA, IB = –5.0 mA) — –0.95

(IC = –10 mA, VCE = –20 V, f = 100 MHz) 170 —
(VCB = –5.0 V, IE = 0, f = 1.0 MHz) — 4.5
(VEB = –0.5 V, IC = 0, f = 1.0 MHz) — 11.5
(IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz) 120 480
Noise Figure NF dB
(IC = –100 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) — 4.0

MOTOROLA
Transistor
PNP Silicon MPS4250
COLLECTOR
3
2
BASE
1 1
EMITTER 2
3
MAXIMUM RATINGS
Collector Current — Continuous IC — mAdc
Total Device Dissipation @ TC = 25°C PD 1.5 mW
Temperature Range

OFF CHARACTERISTICS
(IC = –5.0 mA)
Collector – Emitter Sustaining Voltage(1) V(BR)CEO(sus) –40 — Vdc
(IC = –5.0)
(IC = –10 mA)
(IE = –10 mA)
(VCB = –50 V) — –10 nA
(VCB = –40 V, TA = 65°C) — –3.0 mA
Emitter Cutoff Current IEBO — –20 nA
(VEB = –3.0 V)

MPS4250
ON CHARACTERISTICS
(IC = –1.0 mA, VCE = –5.0 V) 250 —
(IC = –10 mA, VCE = –5.0 V) 250 —
Collector – Emitter Saturation Voltage(1) VCE(sat) — –0.25 Vdc
(IC = –10 mA, IB = –0.5 mA)
Base – Emitter Saturation Voltage(1) VBE(sat) — –0.9 Vdc
(IC = –10 mA, IB = –0.5 mA)

(VCB = –5.0 V, f = 1.0 MHz)
(VEB = –0.5 V, f = 1.0 MHz)
(IC = –1.0 mA, VCE = –5.0 V, f = 1.0 kHz) 250 800
(IC = –0.5 mA, VCE = –5.0 V, f = 20 MHz) 2.0 —
Noise Figure NF dB
(IC = –20 mA, VCE = –5.0 V, RS = 10 kΩ, f = 1.0 kHz, PBW = 150 Hz) — 2.0
(IC = –250 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz, PBW = 150 Hz) — 2.0

MOTOROLA
High Frequency Transistor

NPN Silicon
MPS5179
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Total Device Dissipation @ TC = 25°C PD 300 mW
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage VCEO(sus) 12 — Vdc
(IC = 3.0 mAdc, IB = 0)
(IC = 0.001 mAdc, IE = 0)
(IE = 0.01 mAdc, IC = 0)
(VCB = 15 Vdc, IE = 0) — 0.02
(VCB = 15 Vdc, IE = 0, TA = 150°C) — 1.0
ON CHARACTERISTICS

MPS5179
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Small Signal Current Gain hfe 25 300 —
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz)
Collector Base Time Constant rb′Cc 3.0 14 ps
(IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz)
Noise Figure (See Figure 1) NF — 5.0 dB
(IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz)
Common–Emitter Amplifier Power Gain (See Figure 1) Gpe 15 — dB
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
TYPE
1N3195
TYPE
1N3195
DC L3 TO 50 Ω
2.0 – 10
COMMON LOAD
1200 1.0 – 5.0 C7
91 EXTERNAL
FROM 50 Ω
Q SHIELD 2.0 – 10
SOURCE 0.02 µF L1 L2
C6
Cin C2 0.1 µF
3.0 – 35 2.0 – 10 RFC
10 k 0.001 µF 1.0 µH
–VEE +VCC
1200 0.1 µF 1200
L1 1–3/4 Turns, #18 AWG, 0.5″ L, 0.5″ Diameter

L2 2 Turns, #16 AWG, 0.5″ L, 0.5″ Diameter
L3 2 Turns, #13 AWG, 0.25″ L, 0.5″ Diameter (Position 1/4″ from L2)
Figure 1. 200 MHz Amplifier Power Gain

and Noise Figure Circuit

MOTOROLA
NPN Silicon MPS6428
COLLECTOR
3
2
BASE
1
1 2
3
EMITTER

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current ICES — 0.025 mA
(VCE = 30 Vdc)
Collector Cutoff Current ICBO — 0.01 mA
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current IEBO — 0.01 mA
(VEB = 5.0 Vdc, IC = 0)

MPS6428
ON CHARACTERISTICS
(VCE = 5.0 Vdc, IC = 0.01 mAdc) 250 —
(VCE = 5.0 Vdc, IC = 0.1 mAdc) 250 650
(VCE = 5.0 Vdc, IC = 1.0 mAdc) 250 —
(VCE = 5.0 Vdc, IC = 10 mAdc) 250 —
(IC = 10 mAdc, IB = 0.5 mAdc) — 0.2
(IC = 100 mAdc, IB = 5.0 mAdc) — 0.6
Base – Emitter On Voltage VBE(on) 0.56 0.66 Vdc

Current – Gain — Bandwidth Product fT 100 700 MHz
(IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Voltage Feedback Ratio hre 2.0 20 X 10– 4
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS

NF VT NF VT NF VT
Max (1) Max (2) Max (3) Unit
Noise Figure/Voltage 7.0 18.1 6.0 5700 3.5 4.3 dB nV
(VCE = 5.0 V, IC = 0.1 mA, TA = 25°C)
1. RS = 10 kΩ, BW = 1.0 Hz, f = 100 Hz

2. RS = 50 kΩ, BW = 15.7 kHz, f = 10 Hz–10 kHz
3. RS = 500 Ω, BW = 1.0 Hz, f = 10 Hz

MOTOROLA
3
MPS6507
2
BASE
1
EMITTER
MAXIMUM RATINGS
2
3
Collector – Base Voltage VCBO 30 Vdc CASE 29–04, STYLE 1

Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 20 — — Vdc
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 100 mAdc, IC = 0)
(VCB = 15 Vdc, IE = 0) — — 50 nAdc
(VCB = 15 Vdc, IE = 0, TA = 60°C) — — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain(2) hFE 25 75 — —
Current–Gain — Bandwidth Product fT 700 800 — MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 20 — — —

MOTOROLA
Amplifier Transistors COLLECTOR 3
NPN
MPS6521*
2
BASE
1 EMITTER
PNP
MPS6523
COLLECTOR 3
2 for PNP transistors
BASE
1 EMITTER
MAXIMUM RATINGS
Rating Symbol NPN PNP Unit
Collector – Emitter Voltage VCEO Vdc
MPS6521 25 —
MPS6523 — 25
Collector – Base Voltage VCBO Vdc 1
MPS6521 40 — 2
3
MPS6523 — 25
Emitter – Base Voltage VEBO 4.0 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Temperature Range
(Printed Circuit Board Mounting)

OFF CHARACTERISTICS
(IC = 0.5 mAdc, IB = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0) MPS6521 — 0.05
(VCB = 20 Vdc, IE = 0) MPS6523 — 0.05

NPN MPS6521 PNP MPS6523
ON CHARACTERISTICS
(IC = 100 mAdc, VCE = 10 Vdc) MPS6521 150 —
(IC = 100 mAdc, VCE = 10 Vdc) MPS6523 150 —


(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)

NPN
MPS6521
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA
10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

NPN
MPS6521

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M

100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

NPN
MPS6521
400
TJ = 125°C
200 25°C
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TJ = 25°C TA = 25°C
IB = 500 µA
0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

NPN
MPS6521
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

hfe ≈ 200 @ IC = 1.0 mA
TA = 25°C TA = 25°C
7.0 70
5.0 50 hfe ≈ 200 @ IC = 1.0 mA
3.0 30
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

NPN
MPS6521
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
100
AND conditions:
r(t) is 0.22.
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

PNP
MPS6523

(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
ƪ ƫ

100 k
50 k
NF + 20 log10 en2
4KTRS
20 k
10 k en = Noise Voltage of the Transistor referred to the input. (Figure 3)
0.5 dB
5.0 k In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
2.0 k 1.0 dB T = Temperature of the Source Resistance (°K)
1.0 k RS = Source Resistance (Ohms)
2.0 dB
500
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 25. Wideband

PNP
MPS6523
400
TJ = 125°C
25°C
200
– 55°C
100
80
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
350 µA
0.8 80 DUTY CYCLE ≤ 2.0%

300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

PNP
MPS6523
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

TA = 25°C TA = 25°C
7.0 MPS6521 70
5.0 hfe ≈ 200 50
@ IC = –1.0 mA MPS6521
3.0 30
hfe ≈ 200 MPS6523
2.0 MPS6523 20 @ IC = 1.0 mA hfe ≈ 100
hfe ≈ 100 @ IC = 1.0 mA
1.0 @ IC = –1.0 mA 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

PNP
MPS6523
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
400
1.0 ms 10 µs
100 µs
1.0 s
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40

VCC = 30 V
103
ICBO
AND Example:
ICEX @ VBE(off) = 3.0 V The MPS6523 is dissipating 2.0 watts peak under the following
100
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
r(t) is 0.22.

MOTOROLA
Audio Transistor
NPN Silicon MPS6560
COLLECTOR
3
2
BASE
1
1 2
3
EMITTER
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range
Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/mW
Thermal Resistance, Junction to Case RqJC 83.3 °C/mW

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 100 mAdc, IC = 0)
(VCE = 25 Vdc, IB = 0)
(VCB = 20 Vdc, IE = 0)
(VEB(off) = 4.0 Vdc, IC = 0)
REV 1

MPS6560
(IC = 10 mAdc, VCE = 1.0 Vdc) 35 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 500 mAdc, VCE = 1.0 Vdc) 50 200

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MOTOROLA

COLLECTOR COLLECTOR MPS6601
3 3
MPS6602*
2
BASE
2
BASE
PNP
NPN PNP MPS6651
1
EMITTER
1
EMITTER MPS6652*
MAXIMUM RATINGS Voltage and current are negative
for PNP transistors
Collector – Emitter Voltage VCEO Vdc *Motorola Preferred Device
MPS6601/6651 25
MPS6602/6652 40
Collector – Base Voltage VCBO Vdc
MPS6601/6651 25
MPS6602/6652 30
Total Device Dissipation @ TA = 25°C PD 625 mW 1
Derate above 25°C 5.0 mW/°C 2
3
Derate above 25°C 12 mW/°C CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MPS6601/6651 25 —
MPS6602/6652 40 —
(IC = 100 µAdc, IE = 0) MPS6601/6651 25 —
MPS6602/6652 40 —
(IE = 10 µAdc, IC = 0)
(VCE = 25 Vdc, IB = 0) MPS6601/6651 — 0.1
(VCE = 30 Vdc, IB = 0) MPS6602/6652 — 0.1
(VCB = 25 Vdc, IE = 0) MPS6601/6651 — 0.1
(VCB = 30 Vdc, IE = 0) MPS6602/6652 — 0.1

ON CHARACTERISTICS
(IC = 100 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 500 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 1000 mAdc, VCE = 1.0 Vdc) 30 —
(IC = 1000 mAdc, IB = 100 mAdc)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Rise Time (VCC = 40 Vdc, IC = 500 mAdc, tr — 30 ns
IB1 = 50 mAdc
mAdc,
Storage Time tp w300 ns Duty Cycle) ts — 250 ns

+40 +40
V V
5.0 ms 100 RL 100 RL
+10 OUTPUT OUTPUT
V Vin RB Vin RB
t 6.0 pF t 6.0 pF
0
tr = 3.0 ns * CS * CS
5.0 mF 5.0 mF
100 100
5.0 ms
tr = 3.0 ns


300 200
200
100
h FE , CURRENT GAIN
h FE , CURRENT GAIN
70
100
50
70
VCE = –1.0 V
TJ = 25°C
50 VCE = 1.0 V
TJ = 25°C
30 20
10 100 1000 –10 –100 –1000
Figure 2. MPS6601/6602 DC Current Gain Figure 3. MPS6651/6652 DC Current Gain


300 300
200 200
100 100
70 70
VCE = 10 V VCE = –10 V
50 TJ = 25°C 50 TJ = 25°C
f = 30 MHz f = 30 MHz
30 30
10 100 200 1000 –10 –100 –200 –1000
Figure 4. Current Gain Bandwidth Product Figure 5. Current Gain Bandwidth Product
1.0 –1.0
TJ = 25°C VBE(SAT) @ IC/IB = 10 TJ = 25°C
VBE(SAT) @ IC/IB = 10
0.8 –0.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 VBE(ON) @ VCE = 1.0 V –0.6

VBE(ON) @ VCE = –1.0 V
0.4 –0.4
0.2 –0.2 VCE(SAT) @ IC/IB = 10

VCE(SAT) @ IC/IB = 10
0 0
1.0 10 100 1000 –1.0 –10 –100 –1000
Figure 6. On Voltages Figure 7. On Voltages

80 160
TJ = 25°C TJ = 25°C
60 120
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
40 Cib 80
Cib
20 40
Cob Cob
0 0
Cob 5.0 10 15 20 25 Cob –5.0 –10 –15 –20 –25
Cib 1.0 2.0 3.0 4.0 5.0 Cib –1.0 –2.0 –3.0 –4.0 –5.0
10 10
VCE = 5.0 V VCE = –5.0 V
f = 1.0 kHz f = 1.0 kHz
8.0 TA = 25°C 8.0 TA = 25°C
6.0 IC = 100 mA 6.0
IC = 100 mA
4.0 4.0
2.0 2.0
0 0
10 100 1k 10 k 10 100 1k 10 k
Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS)
Figure 10. MPS6601/6602 Noise Figure Figure 11. MPS6651/6652 Noise Figure
10 k 10 k
td @ VBE(off) = 0.5 V 5k td @ VBE(off) = –0.5 V
5k
VCC = 40 V VCC = –40 V
3k 3k
IC/IB = 10 IC/IB = 10
IB1 = IB2 IB1 = IB2
1k 1k TJ = 25°C
TJ = 25°C
t, TIME (NS)
t, TIME (NS)
500 500
ts ts
200 200
100 100
50 50 tf
tf
20 tr tr
20
td td
10 10
10 20 50 100 200 500 1000 –10 –20 –50 –100 –200 –500 –1000
Figure 12. MPS6601/6602 Switching Times Figure 13. MPS6651/6652 Switching Times

–0.8 –0.8
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)
R qVB , TEMPERATURE COEFFICIENT (mV/°C)

–1.2 –1.2
–1.6 RqVB for VBE –1.6

RqVB for VBE
–2.0 –2.0
–2.4 –2.4
–2.8 –2.8
1.0 10 100 1000 –1.0 –10 –100 –1000
Figure 14. Base–Emitter Temperature Figure 15. Base–Emitter Temperature

Coefficient Coefficient
1k –1 k
500 1.0 MS 1.0 MS

–500
I C , COLLECTOR CURRENT (mA)
200 TC = 25°C 1.0 s –200 TC = 25°C 1.0 s
100 –100
50 –50 MPS6651
MPS6601
MPS6652
MPS6602
CURRENT LIMIT CURRENT LIMIT
20 THERMAL LIMIT –20 THERMAL LIMIT
10 –10
1.0 2.0 5.0 10 20 40 –1.0 –2.0 –5.0 –10 –20 –40
VCE, COLLECTOR–EMITTER VOLTAGE VCE, COLLECTOR–EMITTER VOLTAGE
Figure 16. Safe Operating Area Figure 17. Safe Operating Area
1.0 –1.0
TJ = 25°C TJ = 25°C
0.8 –0.8
0.6 –0.6
IC = IC =
1000 mA –1000 mA
0.4 –0.4
IC = IC =
IC = 500 mA –500 mA
IC = IC = IC =
0.2 100 mA –0.2
50 mA IC = –50 mA –100 mA
IC = IC = IC =
10 mA –10 mA
250 mA –250 mA
0 0
0.01 0.1 1.0 10 100 –0.01 –0.1 –1.0 –10 –100
Figure 18. MPS6601/6602 Saturation Region Figure 19. MPS6651/6652 Saturation Region

1.0

0.7 D = 0.5
0.5
THERMAL RESISTANCE
0.3 0.2
0.2
0.1 RθJC(t) = (t) θJC
RθJC = 100°C/W MAX
0.1 0.05 P(pk)
RθJA(t)d = r(t) θJA
0.07 0.02 SINGLE PULSE RθJA = 357°C/W MAX
0.05 t1 D CURVES APPLY FOR
0.01
0.03 SINGLE PULSE t2 POWER PULSE TRAIN
SHOWN READ TIME AT t1
0.02
DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) θJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)

MOTOROLA

NPN Silicon MPS6714
MPS6715
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Collector – Emitter Voltage VCEO Vdc 1
MPS6714 30 2
3
MPS6715 40
Collector – Base Voltage VCBO Vdc CASE 29–05, STYLE 1
MPS6714 40 TO–92 (TO–226AE)
MPS6715 50
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPS6714 30 —
MPS6715 40 —
(IC = 100 mAdc, IE = 0) MPS6714 40 —
MPS6715 50 —
(IE = 100 mAdc, IC = 0)
(VCB = 40 Vdc, IE = 0) MPS6714 — 0.1
(VCB = 50 Vdc, IE = 0) MPS6715 — 0.1
(VEB = 5.0 Vdc, IC = 0)

MPS6714 MPS6715
(IC = 100 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 1000 mAdc, VCE = 1.0 Vdc) 50 250
(IC = 1000 mAdc, IB = 100 mAdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 2.5 25 —

300 1.0
TJ = 25°C

200 0.8
h FE , CURRENT GAIN
0.6
100
IC =
0.4 1000 mA
70 IC =
VCE = 1.0 V IC = 500 mA
IC = IC = IC =
50 TJ = 25°C 0.2 250 mA
10 mA 50 mA 100 mA
30 0
10 20 50 100 200 500 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
1.0 –0.8
qVB , TEMPERATURE COEFFICIENT (mV/°C)
TJ = 25°C
0.8 –1.2
V, VOLTAGE (VOLTS)
0.6 VBE(on) @ VCE = 1.0 V –1.6

qVB FOR VBE
0.4 –2.0
0.2 VCE(sat) @ IC/IB = 10 –2.4
0 –2.8
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
Figure 3. “ON” Voltages Figure 4. Temperature Coefficient

MPS6714 MPS6715

300 80
TJ = 25°C
200
60
C, CAPACITANCE (pF)
100 40 Cibo
70
VCE = 10 V
20
50 TJ = 25°C
f = 20 MHz
Cobo
30 0
10 20 50 100 200 1000 Cobo 5.0 10 15 20 25
IC, COLLECTOR CURRENT (mA) Cibo 1.0 2.0 3.0 4.0 5.0
Figure 5. Current Gain — Bandwidth Product
1k
1.0 s 1.0 ms 100 ms
500
200
TA = 25°C TC = 25°C
100 DUTY CYCLE ≤ 10%
50 CURRENT LIMIT
THERMAL LIMIT
20 MPS6714
MPS6715
10
1.0 2.0 5.0 10 20 30 40
Figure 7. Active Region — Safe Operating

Area

MOTOROLA

NPN Silicon
COLLECTOR
MPS6717
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AE)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current IEBO — 10 µAdc
(VEB = 5.0 Vdc, IC = 0)

MPS6717
ON CHARACTERISTICS
(IC = 50 mAdc, VCE = 1.0 Vdc) 80 —
(IC = 250 mAdc, VCE = 1.0 Vdc) 50 250

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
400
TJ = 125°C VCE = 1.0 V

200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 mA 0.6 VBE(on) @ VCE = 1.0 V
0.4 0.4
0.2 0.2
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MPS6717
–0.8 80

60 TJ = 25°C
–1.2
40 Cibo
C, CAPACITANCE (pF)
–1.6
20
θVB for VBE
–2.0
10
8.0
–2.4
6.0
Cobo
–2.8 4.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

300
VCE = 2.0 V

2k
1.0 ms
1k
100 µs
500
100 TC = 25°C 1.0 s
200 TA = 25°C
70 100 dc dc
CURRENT LIMIT
50 50 THERMAL LIMIT
20
30 10 MPS6717
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 5.0 10 20 60 80 100

MOTOROLA
One Watt Darlington Transistors

NPN Silicon MPS6724
MPS6725
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Collector – Emitter Voltage VCES 40 50 Vdc 1
2
3
Emitter – Base Voltage VEBO 12 Vdc CASE 29–05, STYLE 1
Collector Current — Continuous IC 1000 mAdc TO–92 (TO–226AE)

Temperature Range

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) V(BR)CES Vdc
(IC = 1.0 mAdc, IB = 0) MPS6724 40 —
MPS6725 50 —
(IC = 1.0 mAdc, IE = 0) MPS6724 50 —
MPS6725 60 —
Emitter – Base Breakdown Voltage V(BR)EBO 12 — Vdc
(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0) MPS6724 — 100
(VCB = 40 Vdc, IE = 0) MPS6725 — 100
(VEB = 10 Vdc, IC = 0)
REV 1

MPS6724 MPS6725
(IC = 200 mAdc, VCE = 5.0 Vdc) 25,000 —
(IC = 1000 mAdc, VCE = 5.0 Vdc) 4,000 40,000
(IC = 1000 mAdc, IB = 2.0 mAdc)
(IC = 1000 mAdc, VCE = 5.0 Vdc)

Current–Gain – Bandwidth Product fT 100 1000 MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

CURRENT LIMIT DUTY CYCLE ≤ 10%

3.0 k THERMAL LIMIT

2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25°C TC = 25°C
200
1.5 2.0 5.0 10 20 30

Area
200 k 3.0
TJ = 125°C
TJ = 25°C
100 k IC = IC = IC = IC =
2.5
70 k 50 mA 250 mA 500 mA
10 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
5.0 k –55°C 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

MPS6724 MPS6725
1.6 –1.0
*APPLIES FOR IC/IB ≤ hFE/3.0

TJ = 25°C 25°C TO 125°C
1.4 –2.0 *qVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
–55°C TO 25°C
1.2 –3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C

1.0 –4.0
qVB FOR VBE
0.8 –5.0 –55°C TO 25°C

0.6 –6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
4.0 20
VCE = 5.0 V
h FE , SMALL–SIGNAL CURRENT GAIN
TJ = 25°C
TJ = 25°C
2.0 f = 100 MHz C, CAPACITANCE (pF)
10
1.0 7.0
Cibo
0.8
5.0
0.6
Cobo
0.4 3.0
0.2 2.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Figure 6. High Frequency Current Gain Figure 7. Capacitance

MOTOROLA

PNP Silicon MPS6726
MPS6727
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
MPS6726 –30 2
3
MPS6727 –40
Collector – Base Voltage VCBO Vdc CASE 29–05, STYLE 1
MPS6726 –40 TO–92 (TO–226AE)
MPS6727 –50
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0) MPS6726 –30 —
MPS6727 –40 —
(IC = –100 mAdc, IE = 0) MPS6726 –40 —
MPS6727 –50 —
(IE = –100 mAdc, IC = 0)
(VCB = –40 Vdc, IE = 0) MPS6726 — –0.1
(VCB = –50 Vdc, IE = 0) MPS6727 — –0.1
(VEB = –5.0 Vdc, IC = 0)

MPS6726 MPS6727
(IC = –100 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –1000 mAdc, VCE = –1.0 Vdc) 50 250
(IC = –1000 mAdc, IB = –100 mAdc)
Base – Emitter On Voltage VBE(on) — –1.2 Vdc
(IC = –1000 mAdc, VCE = –1.0 Vdc)

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
200 –1.0
VCE , COLLECTOR VOLTAGE (VOLTS) IC = IC = IC = IC = IC = IC =

–0.8 –100 –250 –500 mA –1000 mA
–10 mA –50 mA
mA mA
h FE , CURRENT GAIN
100
–0.6
70
VCE = –1.0 V
50 TJ = 25°C –0.4
–0.2
TJ = 25°C
20 0
–10 –20 –50 –100 –200 –500 –1000 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0 –0.8
qV B, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
–0.8 VBE(SAT) @ IC/IB = 10 –1.2

V, VOLTAGE (VOLTS)
–0.6 –1.6
qVB for VBE
–0.4 –2.0
–0.2 –2.4
0 –2.8
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000

MPS6726 MPS6727

300 160
TJ = 25°C
200
120
C, CAPACITANCE (pF)
VCE = –10 V
100 TJ = 25°C 80
f = 20 MHz
70 Cibo
40
50
Cobo
30 0
–10 –20 –50 –100 –200 –500 –1000 Cobo –5.0 –10 –15 –20 –25
Cibo –1.0 –2.0 –3.0 –4.0 –5.0
Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance
–1.0 k
1.0 s 1.0 ms 100 ms
–500
TA = 25°C
TC = 25°C
–200
–100
DUTY CYCLE ≤ 10%
–50 MPS6726
MPS6727
CURRENT LIMIT
–20 THERMAL LIMIT
–10
–1.0 –2.0 –5.0 –10 –20 –30 –40

Area

MOTOROLA

COLLECTOR
3
COLLECTOR
3 MPS8098
2 2
MPS8099*
BASE BASE
PNP
MPS8598
NPN PNP
1 1
EMITTER EMITTER
MPS8599*
MAXIMUM RATINGS
MPS8098 MPS8099 for PNP transistors
Collector – Emitter Voltage VCEO 60 80 Vdc *Motorola Preferred Device

MPS8598
MPS8099 MPS8599
1
Total Device Dissipation @ TC = 25°C PD 1.5 Watts 2
3
Operating and Storage Junction TJ, Tstg – 55 to +150 °C CASE 29–04, STYLE 1
Temperature Range TO–92 (TO–226AA)
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPS8098, MPS8598 60 —
MPS8099, MPS8599 80 —
(IC = 100 µAdc, IE = 0) MPS8098, MPS8598 60 —
MPS8099, MPS8599 80 —
(IE = 10 µAdc, IC = 0) MPS8098, MPS8099 6.0 —
MPS8598, MPS8599 5.0 —
Collector Cutoff Current ICES — 0.1 µAdc
(VCE = 60 Vdc, IB = 0)
(VCB = 60 Vdc, IE = 0) MPS8098, MPS8598 — 0.1
(VCB = 80 Vdc, IE = 0) MPS8099, MPS8599 — 0.1
(VEB = 6.0 Vdc, IC = 0) MPS8098, MPS8099 — 0.1
(VEB = 4.0 Vdc, IC = 0) MPS8598, MPS8599 — 0.1


(IC = 1.0 mAdc, VCE = 5.0 Vdc) 100 300
(IC = 10 mAdc, VCE = 5.0 Vdc) 100 —
(IC = 100 mAdc, VCE = 5.0 Vdc) 75 —
(IC = 100 mAdc, IB = 5.0 mAdc) — 0.4
(IC = 100 mAdc, IB = 10 mAdc) — 0.3
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MPS8098, MPS8598 0.5 0.7
(IC = 10 mAdc, VCE = 5.0 Vdc) MPS8099, MPS8599 0.6 0.8

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MPS8098, MPS8099 — 6.0
MPS8598, MPS8599 — 8.0
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS8098, MPS8099 — 25
MPS8598, MPS8599 — 30

+40 V +40 V
5.0 ms 100 RL 100 RL

+10 V OUTPUT OUTPUT
Vin RB Vin RB
t 6.0 pF t 6.0 pF
0
tr = 3.0 ns * CS * CS
5.0 mF 5.0 mF
100 100
5.0 ms
tr = 3.0 ns



300 300
TJ = 25°C TJ = 25°C
200 200
–5.0 V
5.0 V
VCE = 1.0 V VCE = –1.0 V
100 100
70 70
50 50
30 30
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
Figure 2. MPS8098/99 Current–Gain — Figure 3. MPS8598/99 Current–Gain —

Bandwidth Product Bandwidth Product
40 40
TJ = 25°C TTJJ==25°C
25°C
20 20
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cibo
Cibo
10 10
8.0 8.0
6.0 6.0
Cobo
4.0 4.0
Cobo
2.0 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
Figure 4. MPS8098/99 Capacitance Figure 5. MPS8598/99 Capacitance
1.0 k 1.0 k
VCC = 40 V VCC = –40 V
700 700
IC/IB = 10 ts IC/IB = 10
500 IB1 = IB2 500
ts IB1 = IB2
300 TJ = 25°C 300 TJ = 25°C
200 200
t, TIME (ns)
t, TIME (ns)
100 100 tf
70 70
50 tf 50
tr
30 30
20 tr 20
td @ VBE(off) = 0.5 V td @ VBE(off) = –0.5 V
10 10
10 20 30 50 70 100 200 –10 –20 –30 –50 –70 –100 –200
Figure 6. MPS8098/99 Switching Times Figure 7. MPS8598/99 Switching Times

1.0 k –1.0 k
700 –700
500 –500

300 –300
200 –200
100 –100
70 –70
50 CURRENT LIMIT –50 CURRENT LIMIT
THERMAL LIMIT THERMAL LIMIT
30 –30
20 –20 MPS8598
MPS8098
DUTY CYCLE ≤ 10% DUTY CYCLE ≤ 10%
MPS8099 MPS8599
10 –10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
Figure 8. MPS8098/99 Active–Region Safe Figure 9. MPS8598/99 Active–Region Safe

Operating Area Operating Area
400 300
TJ = 125°C
TJ = 125°C 200
25°C
25°C

200
–55°C
100
100 –55°C
70
80 VCE = 5.0 V
VCE = –5.0 V
50
60
40 30
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
Figure 10. MPS8098/99 DC Current Gain Figure 11. MPS8598/99 DC Current Gain
1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 0.6 VBE @ VCE = 5.0 V

VBE @ VCE = 5.0 V
0.4 0.4
0.2 0.2
0 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
Figure 12. MPS8098/99 “ON” Voltages Figure 13. MPS8598/99 “ON” Voltages


2.0
2.0
TJ = 25°C
IC = IC = IC = IC = IC = IC = IC = IC = IC =
1.6 200 mA 1.6 10 mA 20 mA 50 mA 100 mA 200 mA
20 mA 50 mA 100 mA
1.2 1.2
0.8 0.8
0.4 0.4
IC =
10 mA TJ = 25°C
0 0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Figure 14. MPS8098/99 Collector Saturation Figure 15. MPS8598/99 Collector Saturation
Region Region
–1.0 –1.0

–1.4 –1.4
–1.8 –1.8
RqVB FOR VBE
RqVB FOR VBE
–55°C TO 125°C –55°C TO 125°C
–2.2 –2.2
–2.6 –2.6
–3.0 –3.0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
Figure 16. MPS8098/99 Base–Emitter Figure 17. MPS8598/99 Base–Emitter

Temperature Coefficient Temperature Coefficient
1.0
0.7 D = 0.5
0.5
r(t), NORMALIZED TRANSIENT
0.2
THERMAL RESISTANCE
0.3
0.2 0.1
0.05 ZθJC(t) = r(t) • RθJC
TJ(pk) – TC = P(pk) ZθJC(t)
0.1 P(pk)
SINGLE PULSE 0.02 0.01 ZθJA(t) = r(t) • RθJA
0.07
0.02
DUTY CYCLE, D = t1/t2 (SEE AN469)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response

MOTOROLA

COLLECTOR COLLECTOR MPSA05
3 3
MPSA06*
2
BASE
2
BASE
PNP
NPN PNP MPSA55
1
EMITTER
1
EMITTER MPSA56*
MAXIMUM RATINGS Voltage and current are negative
for PNP transistors
MPSA05 MPSA06
Rating Symbol MPSA55 MPSA56 Unit
Derate above 25°C 12 mW/°C 1
2
3
Temperature Range
THERMAL CHARACTERISTICS TO–92 (TO–226AA)

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MPSA05, MPSA55 60 —
MPSA06, MPSA56 80 —
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current ICES — 0.1 µAdc
(VCE = 60 Vdc, IB = 0)
(VCB = 60 Vdc, IE = 0) MPSA05, MPSA55 — 0.1
(VCB = 80 Vdc, IE = 0) MPSA06, MPSA56 — 0.1
2.0%.

NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
ON CHARACTERISTICS
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 100 —

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz) MPSA05 100 —
MPSA06
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) MPSA55 50 —

MPSA56

+40 V +40 V
5.0 ms 100 RL 100 RL

+10 V OUTPUT OUTPUT
Vin RB Vin RB
t 6.0 pF t 6.0 pF
0
tr = 3.0 ns * CS * CS
5.0 mF 5.0 mF
100 100
5.0 ms
tr = 3.0 ns



300 200
VCE = 2.0 V VCE = –2.0 V
200 TJ = 25°C TJ = 25°C
100
70
100
50
70
50
30
30 20
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200
Figure 2. MPSA05/06 Current–Gain — Figure 3. MPSA55/56 Current–Gain —

Bandwidth Product Bandwidth Product
80 100
TJ = 25°C TJ = 25°C
60 70
40 50 Cibo
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cibo 30
20
20
10
8.0 10 Cobo
6.0 Cobo 7.0
4.0 5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance
1.0 k 1.0 k
700 700
500 500
ts ts
300 300
200 200
t, TIME (ns)
t, TIME (ns)
100 100
70 tf 70 tf
50 50
VCC = 40 V VCC = –40 V
30 IC/IB = 10 tr 30 IC/IB = 10
20 IB1 = IB2 20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V TJ = 25°C td @ VBE(off) = –0.5 V tr
10 10
5.0 7.0 10 20 30 50 70 100 200 300 500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time

1.0 k –1.0 k
700 100 ms –700 100 ms
500 1.0 ms –500 1.0 ms

300 1.0 s –300 1.0 s
200 TC = 25°C –200 TC = 25°C
TA = 25°C TA = 25°C
100 –100
70 –70
50 CURRENT LIMIT –50 CURRENT LIMIT
THERMAL LIMIT THERMAL LIMIT
30 –30
20 –20
MPSA05 MPSA55
MPSA06 MPSA56
10 –10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
Figure 8. MPSA05/06 Active–Region Safe Figure 9. MPSA55/56 Active–Region Safe

Operating Area Operating Area
400 400
TJ = 125°C TJ = 125°C
VCE = 1.0 V VCE = –1.0 V
200 200
25°C 25°C
–55°C
–55°C
100 100
80 80
60 60
40 40
0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 10. MPSA05/06 DC Current Gain Figure 11. MPSA55/56 DC Current Gain
1.0 –1.0
TJ = 25°C TJ = 25°C

V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.6 –0.6
VBE(on) @ VCE = 1.0 V VBE(on) @ VCE = –1.0 V
0.4 –0.4
0.2 –0.2
0 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 12. MPSA05/06 “ON” Voltages Figure 13. MPSA55/56 “ON” Voltages


–1.0
1.0
TJ = 25°C TJ = 25°C
0.8 –0.8
IC = IC = IC = IC = IC = IC = IC = IC =
50 mA 100 mA 250 mA 500 mA –50 mA –100 mA –250 mA –500 mA
0.6 –0.6
0.4 –0.4
IC = IC =
0.2 10 mA –0.2 –10 mA
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50
Figure 14. MPSA05/06 Collector Saturation Figure 15. MPSA55/56 Collector Saturation
Region Region
–0.8 –0.8

–1.2 –1.2
–1.6 –1.6
–2.0 RqVB for VBE –2.0 RqVB for VBE
–2.4 –2.4
–2.8 –2.8
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Figure 16. MPSA05/06 Base–Emitter Figure 17. MPSA55/56 Base–Emitter

Temperature Coefficient Temperature Coefficient
1.0
0.7 D = 0.5
0.5
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
0.3 0.2
0.2 0.1
0.05 ZθJC(t) = r(t) • RθJC
TJ(pk) – TC = P(pk) ZθJC(t)
0.1 P(pk)
SINGLE PULSE 0.02 0.01 ZθJA(t) = r(t) • RθJA
0.07
0.02
DUTY CYCLE, D = t1/t2 (SEE AN469)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response

MOTOROLA
Darlington Transistors MPSA13

MPSA14 *
NPN Silicon
COLLECTOR 3

BASE
2
EMITTER 1
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 100 µAdc, IB = 0)
(VCB= 30 Vdc, IE = 0)
(VEB= 10 Vdc, IC = 0)

MPSA13 MPSA14
(IC = 10 mAdc, VCE = 5.0 Vdc) MPSA13 5,000 —
MPSA14 10,000 —
(IC = 100 mAdc, VCE = 5.0 Vdc) MPSA13 10,000 —

MPSA14 20,000 —

Current–Gain – Bandwidth Product(2) fT 125 — MHz

2. fT = |hfe| S ftest.
RS
in
en
IDEAL
TRANSISTOR

MPSA13 MPSA14
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

MPSA13 MPSA14
20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

MPSA13 MPSA14
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40

MOTOROLA
Chopper Transistor
NPN Silicon
MPSA17
2
BASE
1
EMITTER
MAXIMUM RATINGS 1
2

Emitter – Base Voltage VEBO 15 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IE = 0.1 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)
(Replaces MPSA16/D)

MPSA17
ON CHARACTERISTICS

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MPSA17
500
TA = 25°C
VCE = 10 Vdc
300
200
100
70
50
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1000 2.0
f = 1.0 kHz 1.8
h fe , SMALL SIGNAL CURRENT GAIN
700 TA = 25°C
1.6
VCE = 5.0 Vdc
V, VOLTAGE (VOLTS)
500 1.4
400 1.2
300 1.0
0.8 VBE(on)
200 0.6
0.4
VCE (SAT) @ IC/IB = 10
0.2
100 0
0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 1.0 2.0 3.0 5.0 10 20 30 50 100
Figure 2. Small Signal Current Gain Figure 3. Saturation and On Voltages

200 10
TA = 25°C
7.0
Cob , OUTPUT CAPACITANCE (pF)
100
4.0
70
50
TA = 25°C 2.0
VCE = 10 Vdc
30
20 1.0
0.2 0.5 1.0 2.0 5.0 10 20 0.4 0.7 1.0 2.0 4.0 7.0 10 20 40
Figure 4. Current–Gain — Bandwidth Product Figure 5. Output Capacitance

MOTOROLA
Low Noise Transistor

NPN Silicon
MPSA18
COLLECTOR
3
2
BASE
1
EMITTER 1
2
3
MAXIMUM RATINGS
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 6.5 — — Vdc
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current ICBO — 1.0 50 nAdc

(VCB = 30 Vdc, IE = 0)

MPSA18
(IC = 10 µAdc, VCE = 5.0 Vdc) 400 580 —
(IC = 100 µAdc, VCE = 5.0 Vdc) 500 850 —
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 500 1100 —
(IC = 10 mAdc, VCE = 5.0 Vdc) 500 1150 1500
(IC = 10 mAdc, IB = 0.5 mAdc) — — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.08 0.3

Current–Gain — Bandwidth Product fT 100 160 — MHz
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance Ceb — 5.6 6.5 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) — 0.5 1.5
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 100 Hz) — 4.0 —
Equivalent Short Circuit Noise Voltage VT — 6.5 — nVń ǸHz
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 100 Hz)
RS
in
en
IDEAL
TRANSISTOR

MPSA18
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30 30
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0

3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0
300 µA 100 kHz

3.0 3.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16

2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 µA
300 µA 8.0
0.5
100 µA
0.3 100 µA
4.0 10 µA
0.2
10 µA 30 µA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
100 Hz NOISE DATA

300 20
16 IC = 10 mA 3.0 mA
100 100 µA
70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 µA
300 µA
20 30 µA 8.0
100 µA
10
10 µA
7.0 4.0 30 µA
10 µA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k

MPSA18
4.0

3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.4
0.3
0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
1.0 – 0.4

TJ = 25°C
0.8 – 0.8
V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 5.0 V – 1.2
0.4 – 1.6 TJ = 25°C to 125°C
0.2 – 2.0
– 55°C to 25°C
0 – 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0 500
6.0 TJ = 25°C
300
Cob Cib
C, CAPACITANCE (pF)
4.0 Ceb
200
3.0 Ccb
2.0
100
VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MOTOROLA
NPN Silicon
MPSA20
COLLECTOR
3
2
BASE 1
2
3
1
EMITTER CASE 29–04, STYLE 1
TO–92 (TO–226AA)
MAXIMUM RATINGS
Collector – Base Voltage VCBO 4.0 Vdc
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IE = 100 µAdc, IC = 0)
(VCB = 30 Vdc, IE = 0)

MPSA20
ON CHARACTERISTICS
DC Current Gain(2) hFE 40 400 —

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
+ 3.0 V + 3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
– 0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
– 9.1 V 1N916
< 1.0 ns

MPSA20
(VCE = 5.0 Vdc, TA = 25°C)
20 100
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA

10
10 100 µA
5.0
7.0 100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA
2.0 0.1
10 20 50 100 200 500 1 k 2k 5k 10 k 10 20 50 100 200 500 1 k 2k 5k 10 k

(VCE = 5.0 Vdc, TA = 25°C)
500 k 1M
100 k 200 k
50 k 100 k
20 k 50 k
10 k 20 k
5k 10 k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500 k
10 Hz to 15.7 kHz
200 k
100 k
50 k
ǒ Ǔ
20 k
5k 4KTRS
1.0 dB
5.0 dB
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
Figure 7. Wideband

MPSA20
400
200 25°C
– 55°C
100
80
MPSA20
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
MPSA20 TA = 25°C
IB = 500 µA

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA
IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA

0.6 60
200 µA
0.4 40
100 µA
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6
TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)
1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 – 0.8
0.4 25°C to 125°C
– 1.6
0 – 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPSA20
300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)
t, TIME (ns)
30 tr 100 tf
20 70
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

MPSA20
TA = 25°C TA = 25°C
7.0 hfe ≈ 200 @ IC = 1.0 mA 70
5.0 50 MPSA20
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPSA20
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

VCC = 30 Vdc
103
Example:
ICBO Dissipating 2.0 watts peak under the following conditions:
100
AND t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
ICEX @ VBE(off) = 3.0 Vdc Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
10–1 r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
Figure 19A.
400
1.0 ms
10 µs
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40
Figure 20.

MOTOROLA
Darlington Transistor
NPN Silicon
COLLECTOR 3
MPSA27
BASE
2
EMITTER 1
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating Symbol MPSA27 Unit
@ TA = 25°C 5.0 mW/°C
Derate above 25°C
Temperature Range

OFF CHARACTERISTICS
(IC = 100 µAdc, VBE = 0)
(IC = 100 mAdc, IE = 0)
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VEB = 10 Vdc)

MPSA27
(IC = 10 mA, VCE = 5.0 V) 10,000 — —
(IC = 100 mA, VCE = 5.0 V) 10,000 — —
(IC = 100 mA, IB = 0.1 mAdc)
Base – Emitter On Voltage VBE(on) — — 2.0 Vdc
(IC = 100 mA, VCE = 5.0 Vdc)

Small Signal Current Gain hfe 1.25 2.4 — —
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

MPSA27
VCE = 5.0 V
120
1.6 TA = 25°C
h FE , DC CURRENT GAIN (k)
TA = 125°C
100
V, VOLTAGE (VOLTS)
1.4 VBE(S) @ IC/IB = 1.0 k
80
1.2 VBE(ON) @ VCE = 5.0 V
60
TA = 25°C
1.0
40
0.8
20 TA = –55°C VCE(S) @ IC/IB = 1.0 k
0.6
0
1.0 2.0 3.0 10 20 30 100 200 500 1k 1.0 2.0 3.0 10 20 30 100 200 500 1k
1.6 4.0
1.5 VCE = 5.0 V
hfe , SMALL–SIGNAL CURRENT GAIN

TA = 25°C f = 100 MHz
1.4
2.0 TA = 25°C
1.3
1.2
IC = 500 mA
1.1 1.0
0.8
1.0 IC = 100 mA IC = 250 mA
0.6
0.9 IC = 10 mA
0.8 0.4
0.7
0.2
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain
1k
1.0 ms 100 ms
500
1.0 s
200
TA = 25°C TC = 25°C
100
50
CURRENT LIMIT
20 THERMAL LIMIT
10
1.0 2.0 4.0 6.0 10 20 40 50 60

MOTOROLA
NPN Silicon MPSA28
COLLECTOR 3 MPSA29*
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating Symbol MPSA28 MPSA29 Unit 1
2
Collector – Emitter Voltage VCES 80 100 Vdc 3

Emitter – Base Voltage VEBO 12 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 100 µAdc, VBE = 0) MPSA28 80 — —
MPSA29 100 — —
(IC = 100 mAdc, IE = 0) MPSA28 80 — —
MPSA29 100 — —
(IE = 10 mAdc, IC = 0)
(VCB = 60 Vdc, IE = 0) MPSA28 — — 100
(VCB = 80 Vdc, IE = 0) MPSA29 — — 100
(VCE = 60 Vdc, VBE = 0) MPSA28 — — 500
(VCE = 80 Vdc, VBE = 0) MPSA29 — — 500
(VEB = 10 Vdc, IC = 0)

MPSA28 MPSA29
(IC = 10 mAdc, VCE = 5.0 Vdc) 10,000 — —
(IC = 100 mAdc, VCE = 5.0 Vdc) 10,000 — —
(IC = 10 mAdc, IB = 0.01 mAdc) — 0.7 1.2
(IC = 100 mAdc, IB = 0.1 mAdc) — 0.8 1.5

Current–Gain – Bandwidth Product(2) fT 125 200 — MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

2. fT = hfe S ftest.

MPSA28 MPSA29
VCE = 5.0 V
1.8
h FE , DC CURRENT GAIN (k) 200 VBE(S) @ IC/IB = 1.0 k
TA = 125°C
1.6
V, VOLTAGE (VOLTS)
100 TA = 25°C
50 TA = 25°C 1.4
VBE(ON) @ VCE = 5.0 V
20 TA = –55°C 1.2
10
1.0
5.0
VCE(S) @ IC/IB = 1.0 k
0.8
2.0
1.0 0.6
1.0 2.0 5.0 10 20 50 100 200 500 1k 1.0 2.0 5.0 10 20 50 100 200 500 1k
0 2.4
qV, TEMPERATURE COEFFICIENT (mV/ °C)
TA = 25°C

25°C to 125°C
–1.0 2.0
qVC for VCE(S) IC = 500 mA
–55°C to 25°C
–2.0 1.6
IC = 250 mA
–3.0 1.2
25°C to 125°C IC = 10 mA IC = 100 mA
–55°C to 25°C
–4.0 0.8
qVB for VBE
–5.0 0.4
1.0 2.0 5.0 10 20 50 100 200 500 0.2 1.0 2.0 10 20 100 200 1 k 1.5 k
Figure 3. Temperature Coefficients Figure 4. Collector Saturation Region
1k 10
h fe , HIGH FREQUENCY CURRENT GAIN
500 5.0
100 ms
1.0 ms VCE = 5.0 V

1.0 s TA = 25°C
200 2.0 f = 100 MHz
TA = 25°C TC = 25°C
100 1.0
50 CURRENT LIMIT 0.5

THERMAL LIMIT
20
v MPSA28 0.2
VALID FOR DUTY CYCLE 10% MPSA29
10 0.1
1.0 2.0 5.0 10 20 50 100 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300
Figure 5. Active Region — Safe Operating Figure 6. High Frequency Current Gain
Area

MOTOROLA

NPN Silicon MPSA42*
MPSA43
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range
Thermal Resistance, Junction to Ambient RqJA 200 °C/mW
Thermal Resistance, Junction to Case RqJC 83.3 °C/mW

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MPSA42 300 —
MPSA43 200 —
(IC = 100 mAdc, IE = 0) MPSA42 300 —
MPSA43 200 —
(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0) MPSA42 — 0.1
(VCB = 160 Vdc, IE = 0) MPSA43 — 0.1
(VEB = 6.0 Vdc, IC = 0) MPSA42 — 0.1
(VEB = 4.0 Vdc, IC = 0) MPSA43 — 0.1

MPSA42 MPSA43
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 —
(IC = 30 mAdc, VCE = 10 Vdc) 40 —
(IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 — 0.5
MPSA43 — 0.4

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MPSA42 — 3.0
MPSA43 — 4.0

MPSA42 MPSA43
200
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

100 100
50 70
C, CAPACITANCE (pF)
Ceb 50
20
TJ = 25°C
10 VCE = 20 V
30 f = 20 MHz
5.0
20
2.0 Ccb
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.4 500
TJ = 25°C 100 µs 10 µs
1.2 200 TA = 25°C
1.0 ms
1.0 100 TC = 25°C
V, VOLTAGE (VOLTS)
50
0.8 100 ms
20
THERMAL LIMIT
0.4
2.0
1.0 MPSA43
BELOW RATED VCEO
MPSA42
0 0.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100 200 500

Safe Operating Area

MOTOROLA

NPN Silicon
MPSA44
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 µAdc, VBE = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 400 Vdc, IE = 0)
(VCE = 400 Vdc, VBE = 0)
(VEB = 4.0 Vdc, IC = 0)


MPSA44
(IC = 1.0 mAdc, VCE = 10 Vdc) 40 —
(IC = 10 mAdc, VCE = 10 Vdc) 50 200
(IC = 50 mAdc, VCE = 10 Vdc) 45 —
(IC = 100 mAdc, VCE = 10 Vdc) 40 —
(IC = 1.0 mAdc, IB = 0.1 mAdc) — 0.4
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.5
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.75

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 1.0 — —

MPSA44

160 0.5
140 TA = 125°C
0.4 IC = 1.0 mA IC = 10 mA IC = 50 mA
120 VCE = 10 V
100 0.3
TA = 25°C
25°C
80 0.2
60
0.1
40
–55°C
20 0
1.0 2.0 5.0 10 20 50 100 200 300 10 30 100 300 1.0 k 3.0 k 10 k 50 k
1.0 1000
TA = 25°C 1.0 ms 100 µs

0.8 VBE(sat) @ IC/IB = 10 300
200 TC = 25°C
1.0 s
V, VOLTAGE (VOLTS)
TA = 25°C
100
0.6 VBE(on) @ VCE = 10 V
20
0.4
10 CURRENT LIMIT
THERMAL LIMIT
0.2 VCE(sat) @ IC/IB = 10 SECOND BREAKDOWN LIMIT
2.0 VALID FOR DUTY CYCLE ≤ 10% MPSA44
0 1.0
0.1 0.3 1.0 3.0 10 30 100 300 1.0 2.0 5.0 10 20 50 100 200 500
100 10
Cib
50
C, CAPACITANCE (pF)
20
10 VCE = 10 V
Cob
f = 10 MHz
3.0 TA = 25°C
5.0
2.0
2.0 TA = 25°C 1.5

f = 1.0 MHz
1.0 1.0
0.3 0.5 1.0 3.0 10 30 100 300 0.1 0.2 0.3 1.0 3.0 10 30 100

MPSA44
10 Vin
+9.7 V
5.0
PW = 50 µS
DUTY CYCLE = 2.0%
2.0
t, TIME ( µs)
1.0 0
0.5 –4.0 V
VCC = 150 V
IC/IB = 10 VCC
0.2 TA = 25°C tr
RL
VBE(off) = 4.0 Vdc td
0.1 Vout
1.0 3.0 10 30 50 100
RB
IC, COLLECTOR CURRENT (mA) Vin
CS ≤ 4.0 pF*
Figure 7. Turn–On Switching Times and Test Circuit
10
Vin
5.0 +10.7 V
ts
2.0 PW = 50 µS
DUTY CYCLE = 2.0%
t, TIME ( µs)
1.0
0.5 tf
VCC = 150 V –11.4 V
IC/IB = 10 VCC
0.2 TA = 25°C
RL
0.1
1.0 3.0 10 30 50 100 Vout
IC, COLLECTOR CURRENT (mA) RB
Vin
CS ≤ 4.0 pF*
Figure 8. Turn–Off Switching Times and Test Circuit
* Total Shunt Capacitance or Test Jig and Connectors.

MOTOROLA
PNP Silicon MPSA62
MPSA63
COLLECTOR 3
MPSA64 *
BASE MPSA55, MPSA56
2 For Specifications,
See MPSA05, MPSA06 Data

EMITTER 1
MAXIMUM RATINGS
MPSA63
Collector – Emitter Voltage VCES –20 –30 Vdc 1
2
3
Emitter – Base Voltage VEBO –10 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –100 µAdc, VBE = 0) MPSA62 –20 —
MPSA63, MPSA64 –30 —
(VCB= –15 Vdc, IE = 0) MPSA62 — –100
(VCB = –30 Vdc, IE = 0) MPSA63, MPSA64 — –100
(VEB = –10 Vdc, IC = 0)

MPSA62 MPSA63 MPSA64
(IC = –10 mAdc, VCE = –5.0 Vdc) MPSA63 5,000 —
MPSA64 10,000 —
MPSA62 20,000 —
(IC = –100 mAdc, VCE = –5.0 Vdc) MPSA63 10,000 —

MPSA64 20,000 —

(IC = –10 mAdc, IB = –0.01 mAdc) MPSA62 — –1.0
(IC = –100 mAdc, IB = –0.1 mAdc) MPSA63, MPSA64 — –1.5
(IC = –10 mAdc, VCE = –5.0 Vdc) MPSA62 — –1.4
(IC = –100 mAdc, VCE = –5.0 Vdc) MPSA63, MPSA64 — –2.0

(IC = –100 mAdc, VCE = –5.0 Vdc, f = 100 MHz) MPSA63, MPSA64

2. fT = |hfe| S ftest.

MPSA62 MPSA63 MPSA64
200
TA = 125°C
100
50
–10 V
30 25°C
VCE = –2.0 V
20
–5.0 V
10
7.0
5.0 –55°C
3.0
2.0
–0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300

–2.0 –2.0
TA = 25°C
TA = 25°C
–1.8
–1.6 VBE(sat) @ IC/IB = 100
–1.6
V, VOLTAGE (VOLTS)
IC = –10 mA –50 mA –100 mA –175 mA –300 mA

–1.2
–1.4
–0.8 VCE(sat) @ IC/IB = 1000 –1.2
IC/IB = 100
–1.0
–0.4
–0.8
0 –0.6
–0.3 –0.5 –1.0 –2 –3 –5 –10 –20 –30 –50 –100 –200 –300 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
10 –1000
VCE = –5.0 V
1.0 ms 100 µs
4.0 f = 100 MHz

3.0 TA = 25°C –300
2.0 –200 TA = 25°C 1.0 s
1.0 –100 TC = 25°C
–50 CURRENT LIMIT

0.4 THERMAL LIMIT
0.2 –20 (DUTY CYCLE ≤ 10%) MPSA62
MPSA63
0.1 –10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1K –1.0 –2.0 –4.0 –6.0 –10 –20 –40 –60
Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area

MOTOROLA
MPSA70
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IE = –100 µAdc, IC = 0)
(VCB = –30 Vdc, IE = 0)

MPSA70
ON CHARACTERISTICS
(IC = –5.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, IB = –1.0 mAdc)

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

MPSA70
(VCE = – 5.0 Vdc, TA = 25°C)
10 1.0
7.0 RS ≈ 0 5.0 RS ≈ ∞
IC = 10 µA IC = 1.0 mA

3.0
5.0
2.0
30 µA 300 µA
3.0 1.0
100 µA 0.7 100 µA
300 µA 0.5
2.0 1.0 mA
0.3 30 µA
0.2
10 µA
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M 1.0 M
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 dB
5.0 k 1.0 dB 5.0 k
2.0 k 2.0 k 1.0 dB
1.0 k 2.0 dB 1.0 k
2.0 dB
500 3.0 dB 500
3.0 dB
200 5.0 dB 200 5.0 dB
100 100
10 20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k
1.0 M
500 k 10 Hz to 15.7 kHz
200 k
100 k
ƪ ƫ

50 k
20 k NF + 20 log10 en2
4KTRS
10 k 0.5 dB
2.0 dB
3.0 dB
200
5.0 dB
100
10 20 30 50 70 100 200 300 500 700 1.0 k
Figure 5. Wideband

MPSA70
400
TJ = 125°C
25°C
200
– 55°C
100
80
MPSA70
60 VCE = 1.0 V
VCE = 10 V
40
0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0 100
TA = 25°C TA = 25°C IB = 400 µA
MPSA70 PULSE WIDTH = 300 µs
350 µA

0.8 80 DUTY CYCLE ≤ 2.0%
300 µA 250 µA
IC = 1.0 mA 10 mA 50 mA 100 mA
0.6 60 200 µA
150 µA
0.4 40
100 µA
0.2 20 50 µA
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
1.4 1.6

1.2
0.8
V, VOLTAGE (VOLTS)

0
0.8
VBE(sat) @ IC/IB = 10 – 55°C to 25°C
0.6 0.8
25°C to 125°C
0.4
1.6
0 2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPSA70
500 1000
VCC = 3.0 V 700 VCC = – 3.0 V
300 IC/IB = 10
IC/IB = 10 500
200 TJ = 25°C IB1 = IB2
ts
300 TJ = 25°C
100 200
t, TIME (ns)
t, TIME (ns)
70
50 100
30 70
tr 50
20 tf
td @ VBE(off) = 0.5 V 30
10 20
7.0
5.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100

500 10
TJ = 25°C TJ = 25°C
7.0
300 VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)
5.0 V
200
3.0
100 2.0 Cob
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
20 200
10 f = 1.0 kHz 100 f = 1.0 kHz

TA = 25°C TA = 25°C
7.0 MPSA70 70
5.0 hfe ≈ 200 50
@ IC = –1.0 mA MPSA70
3.0 30
hfe ≈ 200
2.0 20 @ IC = 1.0 mA
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

MPSA70
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1
FIGURE 19
0.07 0.05 DUTY CYCLE, D = t1/t2
0.01
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)
400
1.0 ms 10 µs
100 µs
1.0 s
10 CURRENT LIMIT
THERMAL LIMIT
6.0
4.0
2.0 4.0 6.0 8.0 10 20 40

VCC = 30 V
103
ICBO
AND Example:
100
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
10–1 r(t) is 0.22.
–4 –2 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

MOTOROLA
PNP Silicon MPSA75
MPSA77
COLLECTOR 3
BASE
2
EMITTER 1
1
MAXIMUM RATINGS 2
3
Collector – Emitter Voltage VCES –40 –60 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector Current — Continuous IC –500 Adc
Temperature Range
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage MPSA75 V(BR)CES –40 — — Vdc
(IC = –100 µAdc, VBE = 0) MPSA77 –60 — —
Collector – Base Breakdown Voltage MPSA75 V(BR)CBO –40 — — Vdc
(IC = 100 mAdc, IE = 0) MPSA77 –60 — —
(VCB= –30 V, IE = 0) MPSA75 — — –100
(VCB = –50 V, IE = 0) MPSA77 — — –100
(VCE = –30 V, VBE = 0) MPSA75 — — –500
(VCE = –50 V, VBE = 0) MPSA77 — — –500
Emitter Cutoff Current (VEB = –10 Vdc) IEBO — — –100 nAdc
ON CHARACTERISTICS
(IC = –10 mA, VCE = –5.0 V) 10,000 — —
(IC = –100 mA, VCE = –5.0 V) 10,000 — —
Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc) VCE(sat) — — –1.5 Vdc
Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc) VBE — — –2.0 Vdc

Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) |hfe| 1.25 2.4 — —

MPSA75 MPSA77
200
TA = 125°C
100
50
–10 V
30 25°C
VCE = –2.0 V
20
–5.0 V
10
7.0
5.0 –55°C
3.0
2.0
–0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300

–2.0 –2.0
TA = 25°C
TA = 25°C
–1.8
–1.6 VBE(sat) @ IC/IB = 100
–1.6
V, VOLTAGE (VOLTS)
IC = –10 mA –50 mA –100 mA –175 mA –300 mA

–1.2
–1.4
–0.8 VCE(sat) @ IC/IB = 1000 –1.2
IC/IB = 100
–1.0
–0.4
–0.8
0 –0.6
–0.3 –0.5 –1.0 –2 –3 –5 –10 –20 –30 –50 –100 –200 –300 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
10 –1000
VCE = –5.0 V
1.0 ms 100 µs
4.0 f = 100 MHz

3.0 TA = 25°C –300
2.0 –200 TA = 25°C 1.0 s
1.0 –100 TC = 25°C
–50 CURRENT LIMIT

0.4 THERMAL LIMIT
0.2 –20 (DUTY CYCLE ≤ 10%) MPSA75
MPSA77
0.1 –10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1K –1.0 –2.0 –4.0 –6.0 –10 –20 –40 –60
Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area

MOTOROLA

PNP Silicon MPSA92*
MPSA93
COLLECTOR
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) MPSA92 –300 —
MPSA93 –200 —
(IC = –100 mAdc, IE = 0) MPSA92 –300 —
MPSA93 –200 —
(IE = –100 mAdc, IC = 0)
(VCB = –200 Vdc, IE = 0) MPSA92 — –0.25
(VCB = –160 Vdc, IE = 0) MPSA93 — –0.25
(VEB = –3.0 Vdc, IC = 0)

MPSA92 MPSA93
(IC = –1.0 mAdc, VCE = –10 Vdc) Both Types 25 —
(IC = –10 mAdc, VCE = –10 Vdc) Both Types 40 —
(IC = –30 mAdc, VCE = –10 Vdc) MPSA92 25 —

MPSA93 25 —
(IC = –20 mAdc, IB = –2.0 mAdc) MPSA92 — –0.5
MPSA93 — –0.4
(IC = –20 mAdc, IB = –2.0 mAdc)

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz) MPSA92 — 6.0
MPSA93 — 8.0

MPSA92 MPSA93
150
TJ = +125°C
VCE = –10 Vdc
100
+25°C
70
50 –55°C
30
20
15
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100

100 100
80 TJ = 25°C
50 VCE = –20 Vdc
Cib 60
C, CAPACITANCE (pF)
20
40
10 30
5.0
20
2.0
Ccb
1.0 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0 –500
100 µs
1.0 ms
–0.8 –200 1.0 s

VBE @ VCE = –10 V
V, VOLTAGE (VOLTS)
–100
–0.6
MPSA93
–50
1.5 WATT THERMAL
–0.4 LIMITATION @ TC = 25°C MPSA92
625 mW THERMAL
–0.2
SECOND BREAKDOWN
0 –5.0
–1.0 –2.0 –5.0 –10 –20 –50 –100 –3.0 –5.0 –10 –20 –30 –50 –100 –200 –300

MOTOROLA
VHF/UHF Transistors
NPN Silicon MPSH10
COLLECTOR MPSH11
3
1
BASE
2
EMITTER
1
2
3

Temperature Range
OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 25 Vdc, IE = 0)
(VEB = 2.0 Vdc, IC = 0)

MPSH10 MPSH11
ON CHARACTERISTICS

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Common–Base Feedback Capacitance Crb pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MPSH10 0.35 0.65
MPSH11 0.6 0.9
Collector Base Time Constant rb’Cc — 9.0 ps
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

MOTOROLA
CATV Transistor
NPN Silicon
COLLECTOR
MPSH17
3
1
BASE
2
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range
(Printed Circuit Board Mounting)

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 15 Vdc, IE = 0)

MPSH17
ON CHARACTERISTICS
DC Current Gain hFE 25 — 250 —
Collector–Emitter Saturation Voltage VCE(sat) — — 0.5 —

Collector–Base Capacitance Ccb 0.3 — 0.9 pF
(VCB = 10 Vdc, f = 1.0 MHz)
Small–Signal Current Gain hfe 30 — — —
Noise Figure NF — — 6.0 dB
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)
FUNCTIONAL TEST
Amplifier Power Gain Gpe — 24 — dB
(IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz)

MOTOROLA
RF Amplifier Transistor
PNP Silicon MPSH81
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO –20 — — Vdc
(IC = –1.0 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –10 Vdc, IE = 0)
(VEB = –2.0 Vdc, IC = 0)

MPSH81
ON CHARACTERISTICS
DC Current Gain hFE 60 — — —
(IC = –5.0 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage VCE(sat) — — –0.5 Vdc
(IC = –5.0 mAdc, IB = –0.5 mAdc)
Base– Emitter On Voltage VBE(on) — — –0.9 Vdc
(IC = –5.0 mAdc, VCE = –10 Vdc)

Collector–Base Capacitance Ccb — — 0.85 pF
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Collector–Emitter Capacitance Cce — — 0.65 pF
(IB = 0, VCB = –10 Vdc, f = 1.0 MHz)

MPSH81
TYPICAL COMMON–BASE y–PARAMETERS
(VCB = 10 Vdc, TA = 25°C, Frequency Points in MHz)
–30 0
450 MHz 100 MHz
930
–40 –1.0
MHz IC = –4.0 mA 250
–50 –2.0
250 MHz 450
–60 –3.0
brb , (mmhos)
b ib , (mmhos)
–8.0 mA 100 MHz

–70 –4.0
IC = –12 mA –8.0 mA –4.0 mA
–80 –5.0
–90 –6.0
–12 mA 930
–100 –7.0
–110 –8.0
–20 0 20 40 60 80 100 120 140 –2.4 –2.1 –1.8 –1.5 –1.2 –0.9 –0.6 –0.3 0
gib, (mmhos) grb, (mmhos)
Figure 1. Input Admittance Figure 2. Reverse Transfer Admittance
120 14
100 MHz
110 12
–8.0 mA
100 250 930
–12 mA 10
90 IC = –4.0 mA
bfb , (mmhos)
bob , (mmhos)
80 –8.0 mA 8.0
450 –12 mA
70 6.0
60 930 4.0 450
50 IC = –4.0 mA
250
2.0
40 100 MHz
30 0
20 –2.0
–120 –100 –80 –60 –40 –20 0 20 40 –0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
gfb, (mmhos) gob, (mmhos)
Figure 3. Forward Transfer Admittance Figure 4. Output Admittance

1000
900
800
700
600
500
400
300 VCE = –10 V
f = 100 MHz
200
100
0
0 –2.0 –4.0 –6.0 –8.0 –10 –12 –14 –16 –18 –20

MOTOROLA
NPN Silicon MPSL01
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AA)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 µAdc, IE = 0 )
(IE = 10 µAdc, IC = 0)
(VCB = 75 Vdc, IE = 0)
(VEB = 4.0 Vdc, IC = 0)

MPSL01
ON CHARACTERISTICS
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.20
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.30
(IC = 10 mAdc, IB = 1.0 mAdc) — 1.2
(IC = 50 mAdc, IB = 5.0 mAdc)(1) — 1.4

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 30 — —

MPSL01
500
300 VCE = 1.0 V
TJ = 125°C
200 VCE = 5.0 V
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1.0
0.9
0.8
0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
101
VCE = 30 V
100
10–1 TJ = 125°C
IC = ICES
10–2 75°C
25°C
10–4
10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6

MPSL01
1.0 2.5
TJ = 25°C

2.0 TJ = – 55°C to +135°C
V, VOLTAGE (VOLTS)
0.8 1.5

0
0.4 – 0.5
– 1.0
qVB for VBE(sat)
0.2 – 1.5
VCE(sat) @ IC/IB = 10 – 2.0
0 – 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
50
30
VBB VCC
C, CAPACITANCE (pF)
10.2 V
– 8.8 V 30 V 20
Vin
100 3.0 k RC 10
0.25 µF Cibo
10 µs RB 7.0
5.1 k
3.0 Cobo
tr, tf ≤ 10 ns Vin 100 1N914
1.0
1000 5000
IC/IB = 10 tf @ VCC = 120 V IC/IB = 10
3000
500 TJ = 25°C TJ = 25°C
2000
300 tr @ VCC = 120 V tf @ VCC = 30 V
200 1000
tr @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
100 500
300 ts @ VCC = 120 V

50 td @ VEB(off) = 1.0 V
200
30 VCC = 120 V
20 100
10 50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
PNP Silicon MPSL51
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3

MAXIMUM RATINGS TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –100 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current ICBO — –1.0 µAdc
(VCB = –50 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)

MPSL51
(IC = –50 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.25
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.30
(IC = –10 mAdc, IB = –1.0 mAdc) — –1.2
(IC = –50 mAdc, IB = –5.0 mAdc) — –1.2

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 20 — —

MPSL51
200
150
TJ = 125°C
h FE, CURRENT GAIN
100
25°C
70
50
– 55°C
30 VCE = – 1.0 V
VCE = – 5.0 V
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
103
VCE = 30 V
102
IC = ICES
101
TJ = 125°C
100
75°C
10–1
REVERSE FORWARD
10–2 25°C
10–3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

MPSL51
1.0 2.5
TJ = 25°C TJ = – 55°C to 135°C

0.9 2.0
V, VOLTAGE (VOLTS) 0.8 1.5
0.7 1.0
0.6 0.5
θVC for VCE(sat)
0.5 0
0.4 –0.5
0.3 –1.0
0.2 VCE(sat) @ IC/IB = 10 –1.5
θVB for VBE(sat)
0.1 –2.0
0 –2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
100
70 TJ = 25°C
VBB VCC 50
+ 8.8 V –30 V
30
C, CAPACITANCE (pF)
10.2 V
20 Cibo
100 3.0 k RC
Vin
Vout 10
10 µs 0.25 µF RB 7.0
5.1 k
tr, tf ≤ 10 ns Vin 100 1N914 3.0
1.0
1000 2000
700 IC/IB = 10
TJ = 25°C tr @ VCC = 120 V 1000
500 IC/IB = 10 tf @ VCC = 120 V
700 TJ = 25°C
300
tr @ VCC = 30 V 500
200
tf @ VCC = 30 V
t, TIME (ns)
t, TIME (ns)
300
100 200
70 ts @ VCC = 120 V
50 100
70
30
50
20 td @ VBE(off) = 1.0 V
VCC = 120 V 30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200

MOTOROLA
One Watt High Current Transistors

NPN Silicon MPSW01
COLLECTOR MPSW01A *
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
2
MPSW01 30
MPSW01A 40 CASE 29–05, STYLE 1
Collector – Base Voltage VCBO Vdc TO–92 (TO–226AE)
MPSW01 40
MPSW01A 50
Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0) MPSW01 30 —
MPSW01A 40 —
(IC = 100 µAdc, IE = 0) MPSW01 40 —
MPSW01A 50 —
(IE = 100 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0) MPSW01 — 0.1
(VCB = 40 Vdc, IE = 0) MPSW01A — 0.1
(VEB = 3.0 Vdc, IC = 0)


MPSW01 MPSW01A
(IC = 10 mAdc, VCE = 1.0 Vdc) 55 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 1000 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 1000 mAdc, IB = 100 mAdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
300 1.0
TJ = 25°C

200 0.8
h FE , CURRENT GAIN
0.6
100
IC =
0.4 1000 mA
70 IC =
VCE = 1.0 V IC = 500 mA
IC = IC = IC =
50 TJ = 25°C 0.2 250 mA
10 mA 50 mA 100 mA
30 0
10 20 50 100 200 500 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
1.0 –0.8
qVB , TEMPERATURE COEFFICIENT (mV/°C)
TJ = 25°C
0.8 –1.2
V, VOLTAGE (VOLTS)
0.6 VBE(on) @ VCE = 1.0 V –1.6

qVB FOR VBE
0.4 –2.0
0.2 VCE(sat) @ IC/IB = 10 –2.4
0 –2.8
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000

MPSW01 MPSW01A

300 80
TJ = 25°C
200
60
C, CAPACITANCE (pF)
100 40 Cibo
70
VCE = 10 V
20
50 TJ = 25°C
f = 20 MHz
Cobo
30 0
10 20 50 100 200 1000 Cobo 5.0 10 15 20 25
IC, COLLECTOR CURRENT (mA) Cibo 1.0 2.0 3.0 4.0 5.0
Figure 5. Current Gain — Bandwidth Product
1k
1.0 s 1.0 ms 100 ms
500
200
TA = 25°C TC = 25°C
100 DUTY CYCLE ≤ 10%
50 CURRENT LIMIT
THERMAL LIMIT
20 MPSW01
MPSW01A
10
1.0 2.0 5.0 10 20 30 40

Area

MOTOROLA

NPN Silicon MPSW05
MPSW06*
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating Symbol MPSW05 MPSW06 Unit CASE 29–05, STYLE 1
Collector – Emitter Voltage VCEO 60 80 Vdc TO–92 (TO–226AE)

Total Device Dissipation @ TA = 25°C PD 1.0 Watt
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0) MPSW05 60 —
MPSW06 80 —
(IE = 100 mAdc, IC = 0)
(VCE = 40 Vdc, IB = 0) MPSW05 — 0.5
(VCE = 60 Vdc, IB = 0) MPSW06 — 0.5
(VCB = 40 Vdc, IE = 0) MPSW05 — 0.1
(VCB = 60 Vdc, IE = 0) MPSW06 — 0.1
(VEB = 3.0 Vdc, IC = 0)


MPSW05 MPSW06
(IC = 50 mAdc, VCE = 1.0 Vdc) 80 —
(IC = 250 mAdc, VCE = 1.0 Vdc) 60 —

(VCB = 10 V, f = 1.0 MHz)
400
TJ = 125°C VCE = 1.0 V

200
25°C
–55°C
100
80
60
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
V, VOLTAGE (VOLTS)
50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 mA 0.6 VBE(on) @ VCE = 1.0 V
0.4 0.4
0.2 0.2
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MPSW05 MPSW06
–0.8 80

60 TJ = 25°C
–1.2
40 Cibo
C, CAPACITANCE (pF)
–1.6
20
θVB for VBE
–2.0
10
8.0
–2.4
6.0
Cobo
–2.8 4.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

300
VCE = 2.0 V

2k
1.0 ms
1k
100 µs
500
100 TC = 25°C 1.0 s
200 TA = 25°C
70 100 dc dc
CURRENT LIMIT
50 50 THERMAL LIMIT
20 MPSW05
30 10 MPSW06
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 5.0 10 20 60 80 100

MOTOROLA
One Watt High Voltage Transistor

NPN Silicon MPSW10
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AE)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO 300 — Vdc
(IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 100 µAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VEB = 6.0 Vdc, IC = 0)

MPSW10
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 —
(IC = 30 mAdc, VCE = 10 Vdc) 40 —
Collector–Emitter Saturation Voltage VCE(sat) — 0.75 Vdc
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

200
VCE = 10 V TJ = 125°C
0.6
100 25°C 0.5 TJ = 25°C
70 0.4
IC = 30 mA
–55°C 0.3
50
IC = 20 mA
0.2
30 IC = 10 mA
0.1
20 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 30
1.4 2.5
1.2 TJ = 25°C
2.0
1.5
IC
IB
+ 10
25°C to 125°C
1.0
V, VOLTAGE (VOLTS)
1.0
0.8 0.5 RθVC for VCE(sat)

0
0.6 VBE(on) @ VCE = 10 V –55°C to 25°C
–0.5
0.4 –1.0
5.0 –55°C to 125°C
0.2 VCE(sat) @ IC/IB = 10 –2.0
0 –2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MPSW10

100 100
70 TJ = 25°C
50 70
Ceb
30
C, CAPACITANCE (pF)
50
20
10 TJ = 25°C
30
VCE = 20 V
7.0
f = 20 MHz
5.0 Ccb 20
3.0
2.0
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1k
CURRENT LIMIT
500 THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
200 1.0 ms
1.0 s 100 µs
100
50
TA = 25°C
20
DUTY CYCLE ≤ 10%
10
10 20 50 100 200 300

MOTOROLA

NPN Silicon MPSW13
COLLECTOR 3
MPSW14
BASE
2
EMITTER 1
1
2
3

TO–92 (TO–226AE)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 100 µAdc, VBE = 0)
(VCB = 30 Vdc, IE = 0)
(VEB = 10 Vdc, IC = 0)
REV 1

MPSW13 MPSW14
(IC = 10 mAdc, VCE = 5.0 Vdc) MPSW13 5,000 —
MPSW14 10,000 —
(IC = 100 mAdc, VCE = 5.0 Vdc) MPSW13 10,000 —

MPSW14 20,000 —
Current–Gain — Bandwidth Product(2) fT 125 — MHz

CURRENT LIMIT DUTY CYCLE ≤ 10%

3.0 k THERMAL LIMIT

2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25°C TC = 25°C
200
1.5 2.0 5.0 10 20 30

Area
200 k 3.0
TJ = 125°C
TJ = 25°C
100 k IC = IC = IC = IC =
2.5
70 k 50 mA 250 mA 500 mA
10 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
5.0 k –55°C 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

MPSW13 MPSW14
1.6 –1.0

TJ = 25°C 25°C TO 125°C
1.4 –2.0 *qVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
–55°C TO 25°C
1.2 –3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C

1.0 –4.0
qVB FOR VBE
0.8 –5.0 –55°C TO 25°C

0.6 –6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
4.0 20
VCE = 5.0 V
h FE , SMALL–SIGNAL CURRENT GAIN
TJ = 25°C
TJ = 25°C
2.0 f = 100 MHz
C, CAPACITANCE (pF)
10
1.0 7.0
Cibo
0.8
5.0
0.6
Cobo
0.4 3.0
0.2 2.0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Figure 6. High Frequency Current Gain Figure 7. Capacitance

MOTOROLA

NPN Silicon MPSW42
COLLECTOR
3
2
BASE
1 1
2
EMITTER 3

TO–92 (TO–226AE)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = 1.0 mAdc, IB = 0)
(IC = 100 µAdc, IE = 0)
(IE = 100 µAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VEB = 6.0 Vdc, IC = 0)

MPSW42
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 —
(IC = 30 mAdc, VCE = 10 Vdc) 40 —
Collector Capacitance Ccb — 3.0 pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

200
VCE = 10 V TJ = 125°C
0.6
100 25°C 0.5 TJ = 25°C
70 0.4
IC = 30 mA
–55°C 0.3
50
IC = 20 mA
0.2
30 IC = 10 mA
0.1
20 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 30
1.4 2.5
1.2 TJ = 25°C
2.0
1.5
IC
IB
+ 10
25°C to 125°C
1.0
V, VOLTAGE (VOLTS)
1.0
0.8 0.5 RθVC for VCE(sat)

0
0.6 VBE(on) @ VCE = 10 V –55°C to 25°C
–0.5
0.4 –1.0
5.0 –55°C to 125°C
0.2 VCE(sat) @ IC/IB = 10 –2.0
0 –2.5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MPSW42

100 100
70 TJ = 25°C
50 70
Ceb
30
C, CAPACITANCE (pF)
50
20
10 TJ = 25°C
30
VCE = 20 V
7.0
f = 20 MHz
5.0 Ccb 20
3.0
2.0
1.0 10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1k
CURRENT LIMIT
500 THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
200 1.0 ms
1.0 s 100 µs
100
50
TA = 25°C
20
DUTY CYCLE ≤ 10%
10
10 20 50 100 200 300

MOTOROLA

NPN Silicon MPSW45
MPSW45A*
COLLECTOR 3
BASE
2
EMITTER 1
1
MAXIMUM RATINGS 2
3
Rating Symbol MPSW45 MPSW45A Unit
Collector – Emitter Voltage VCES 40 50 Vdc CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Emitter – Base Voltage VEBO 12 12 Vdc
Collector Current — Continuous IC 1.0 1.0 Adc
Temperature Range

OFF CHARACTERISTICS
(IC = 100 µAdc, VBE = 0) MPSW45 40 —
MPSW45A 50 —
(IC = 100 mAdc, IE = 0) MPSW45 50 —
MPSW45A 60 —
(IE = 10 mAdc, IC = 0)
(VCB = 30 Vdc, IE = 0) MPSW45 — 100
(VCB = 40 Vdc, IE = 0) MPSW45A — 100
(VEB = 10 Vdc, IC = 0)

MPSW45 MPSW45A
(IC = 200 mAdc, VCE = 5.0 Vdc) 25,000 150,000
(IC = 500 mAdc, VCE = 5.0 Vdc) 15,000 —
(IC = 1.0 Adc, VCE = 5.0 Vdc) 4,000 —
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base– Emitter Saturation Voltage VBE(sat) — 2.0 Vdc
(IC = 1.0 Adc, IB = 2.0 mAdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
RS
in
en
IDEAL
TRANSISTOR

MPSW45 MPSW45A
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
RS ≈ 0 1.0
200
0.7

0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
200 14

12
100
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100

MPSW45 MPSW45A
20 4.0
VCE = 5.0 V

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500

200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
1.6 – 1.0

TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C

1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500

MPSW45 MPSW45A
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
1.0 k
FIGURE A
700 1.0 ms
500
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
+ t1 f + ttP1
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40

MOTOROLA
One Watt High Current Transistors

PNP Silicon MPSW51
MPSW51A*
COLLECTOR
3
BASE
1
EMITTER
MAXIMUM RATINGS
Collector – Emitter Voltage MPSW51 VCEO –30 Vdc 1
MPSW51A –40 2
3
Collector – Base Voltage MPSW51 VCBO –40 Vdc

MPSW51A –50 CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) MPSW51 –30 —
MPSW51A –40 —
(IC = –100 mAdc, IE = 0) MPSW51 –40 —
MPSW51A –50 —
(IE = –100 mAdc, IC = 0)
(VCB = –30 Vdc, IE = 0) MPSW51 — –0.1
(VCB = –40 Vdc, IE = 0) MPSW51A — –0.1
(VEB = –3.0 Vdc, IC = 0)

MPSW51 MPSW51A
ON CHARACTERISTICS
(IC = –10 mAdc, VCE = –1.0 Vdc) 55 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –1000 mAdc, VCE = –1.0 Vdc) 50 —
(IC = –1000 mAdc, IB = –100 mAdc)
Base – Emitter On Voltage VBE(on) — –1.2 Vdc
(IC = –1000 mAdc, VCE = –1.0 Vdc)

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
200 –1.0

IC = IC = IC = IC = IC = IC =
–0.8 –100 –250 –500 mA –1000 mA
–10 mA –50 mA
mA mA
h FE , CURRENT GAIN
100
–0.6
70
VCE = –1.0 V
50 TJ = 25°C –0.4
–0.2
TJ = 25°C
20 0
–10 –20 –50 –100 –200 –500 –1000 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0 –0.8
qV B, TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
–0.8 VBE(SAT) @ IC/IB = 10 –1.2

V, VOLTAGE (VOLTS)
–0.6 –1.6
qVB for VBE
–0.4 –2.0
–0.2 –2.4
0 –2.8
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000

MPSW51 MPSW51A

300 160
TJ = 25°C
200
120
C, CAPACITANCE (pF)
VCE = –10 V
100 TJ = 25°C 80
f = 20 MHz
70 Cibo
40
50
Cobo
30 0
–10 –20 –50 –100 –200 –500 –1000 Cobo –5.0 –10 –15 –20 –25
Cibo –1.0 –2.0 –3.0 –4.0 –5.0
Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance
–1.0 k
1.0 ms 1.0 ms 100 ms
–500
TA = 25°C
TC = 25°C
–200
–100
DUTY CYCLE ≤ 10%
–50 MPSW51
MPSW51A
CURRENT LIMIT
–20 THERMAL LIMIT
–10
–1.0 –2.0 –5.0 –10 –20 –30 –40

Area

MOTOROLA

PNP Silicon MPSW55
MPSW56*
COLLECTOR
2
BASE
1
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol MPSW55 MPSW56 Unit
TO–92 (TO–226AE)
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0) MPSW55 –60 —
MPSW56 –80 —
(IE = –100 mAdc, IC = 0)
(VCE = –40 Vdc, IB = 0) MPSW55 — –0.5
(VCE = –60 Vdc, IB = 0) MPSW56 — –0.5
(VCB = –40 Vdc, IE = 0) MPSW55 — –0.1
(VCB = –60 Vdc, IE = 0) MPSW56 — –0.1
(VEB = –3.0 Vdc, IC = 0)

MPSW55 MPSW56
(IC = –50 mAdc, VCE = –1.0 Vdc) 100 —
(IC = –250 mAdc, VCE = –1.0 Vdc) 50 —
(IC = –250 mAdc, IB = –10 mAdc)
(IC = –250 mAdc, VCE = –5.0 Vdc)

(VCB = –10 Vdc, f = 1.0 MHz)
400
TJ = 125°C
VCE = –1.0 V
200
25°C
–55°C
100
80
60
40
–0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

–1.0 –1.0
TJ = 25°C TJ = 25°C
–0.8 –0.8
V, VOLTAGE (VOLTS)
–0.6 –50 –0.6

IC = –10 mA –100 mA –250 mA –500 mA VBE(on) @ VCE = –1.0 V
mA
–0.4 –0.4
–0.2 –0.2
0 0
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

MPSW55 MPSW56
–0.8 100

70 TJ = 25°C
Cibo
–1.2
50
C, CAPACITANCE (pF)
–1.6 30
20
–2.0 θVB for VBE
10 Cobo
–2.4
7.0
–2.8 5.0
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

200
VCE = –2.0 V
TJ = 25°C DUTY CYCLE ≤ 10%

–2 k
100 1.0 ms
–1 k
100 µs
70 –500
1.0 s
TA = 25°C dc
–200
50 TC = 25°C dc
–100
CURRENT LIMIT
–50 THERMAL LIMIT
30
–20 MPSW55
20 –10 MPSW56
–2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –1.0 –2.0 –5.0 –10 –20 –60 –80 –100
Figure 6. Current–Gain — Bandwidth Product Figure 7. Active Region — Safe Operating
Area

MOTOROLA

PNP Silicon MPSW63
COLLECTOR 3
MPSW64 *
BASE
2
EMITTER 1
1
2
3

MAXIMUM RATINGS TO–92 (TO–226AE)
MPSW63
Rating Symbol MPSW64 Unit
Temperature Range

OFF CHARACTERISTICS
(IC = –100 µAdc, VBE = 0)
(VCB = –30 Vdc, IE = 0)
(VEB = –10 Vdc, IC = 0)

MPSW63 MPSW64
(IC = –10 mAdc, VCE = –5.0 Vdc) MPSW63 5,000 —
MPSW64 10,000 —
(IC = –100 mAdc, VCE = –5.0 Vdc) MPSW63 10,000 —

MPSW64 20,000 —
(IC = –100 mAdc, IB = –0.1 mAdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
Current–Gain — Bandwidth Product(2) fT 125 — MHz


200
TJ = 125°C
h FE, DC CURRENT GAIN (X1.0 k)
100
70
50 –10 V
25°C
30 VCE = –2.0 V
20
–5.0 V
10
7.0 –55°C
5.0
3.0
2.0
–0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300
–2.0 –2.0
TJ = 25°C TJ = 25°C
–1.8
–1.6 VBE(sat) @ IC/IB = 100
V, VOLTAGE (VOLTS)
–1.6
–1.2 –50 mA –100 mA –175 mA –300 mA
VBE(on) @ VCE = –5.0 V –1.4
VCE(sat) @ IC/IB = 1000 –1.2

–0.8
IC/IB = 100
–1.0
–0.4
–0.8
IC = –10 mA
0 –0.6
–0.3 –0.5 –1.0 –3.0 –5.0 –10 –30 –50 –100 –300 –0.1 –0.3 –1.0 –3.0 –10 –30 –100 –300 –1 k –3 k –10 k
Figure 2. “ON” Voltage Figure 3. Collector Saturation Region

MPSW63 MPSW64

+5.0 600
R qV , TEMPERATURE COEFFICIENT (mV/ °C)
+4.0 *APPLIES FOR IC/IB ≤ hFE/100
400 TJ = 25°C
+3.0 300
VCE = –20 V
+2.0 +25°C TO +125°C
200
+1.0
–50°C TO +25°C
0
100
–1.0
*RqVC FOR VCE(sat) –10 V
–2.0 60
–3.0 –50°C TO +25°C 40 –5.0 V

–4.0 RqVB FOR VBE 30
+25°C TO +125°C
–5.0 20
–0.3 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –300 –0.3 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –300
Figure 4. Temperature Coefficients Figure 5. Current–Gain — Bandwidth Product
20 –2 k
Cobo CURRENT LIMIT
15 THERMAL LIMIT
100 ms
–1 k
Cibo
C, CAPACITANCE (pF)
10 1.0 mS
7.0 –500
TJ = 25°C 1.0 s
5.0
f = 1.0 MHz TA = 25°C TC = 25°C
–200
3.0
DUTY CYCLE ≤ 10%
2.0 –100
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –30 –1.5 –2.0 –5.0 –10 –20 –30
VR, REVERSE VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance Figure 7. Active Region, Safe Operating Area

MOTOROLA

PNP Silicon MPSW92
3
2
BASE
1
EMITTER
1
2
3

TO–92 (TO–226AE)
MAXIMUM RATINGS
Temperature Range

OFF CHARACTERISTICS
(IC = –1.0 mAdc, IB = 0)
(IC = –100 µAdc, IE = 0)
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current ICBO — –0.25 µAdc
(VCB = –200 Vdc, IE = 0)
(VEB = –3.0 Vdc, IC = 0)

MPSW92
(IC = –1.0 mAdc, VCE = –10 Vdc) 25 —
(IC = –10 mAdc, VCE = –10 Vdc) 40 —
(IC = –30 mAdc, VCE = –10 Vdc) 25 —
(IC = –20 mAdc, IB = –2.0 mAdc)
(IC = –20 mAdc, IB = –2.0 mAdc)
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
200 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) –0.7

VCE = –10 V TJ = 125°C TJ = 25°C
–0.6 IC = –20 mA IC = –30 mA
25°C
100 –0.5
70 –55°C –0.4
–0.3
50
IC = –10 mA
–0.2
30
–0.1
20 0
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –30

MPSW92
–1.4 2.5
R qV, TEMPERATURE COEFFICIENTS (mV/ °C)

2.0 IC/IB = 10
–1.2 25°C TO 125°C
TJ = 25°C 1.5
–1.0
V, VOLTAGE (VOLTS)
1.0
VBE(sat) @ IC/IB = 10 0.5 RqVC FOR VCE(sat)
–0.8 –55°C TO 25°C
0
–0.6 VBE(on) @ VCE = –10 V –0.5
–0.4 –1.0 –55°C TO 125°C

5.0 –1.5 RqVB FOR VBE
–0.2 VCE(sat) @ IC/IB = 10
–2.0
0 –2.5
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100

100 100
70 Ceb TJ = 25°C
50 70
30
C, CAPACITANCE (pF)
50
20
TJ = 25°C
VCE = –20 V
10 30 f = 20 MHz
7.0 Ccb
5.0
20
3.0
2.0
1.0 10
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100
–1 k
–500
100 ms
–200
1.0 s CURRENT LIMIT
–100 THERMAL LIMIT
1.0 ms SECOND BREAKDOWN
LIMIT
–50
TC = 25°C MPSW92
TA = 25°C
–20
DUTY CYCLE ≤ 10%
–10
–10 –20 –50 –100 –200 –300

MOTOROLA
PNP RF Amplifier Transistor MSA1022-CT1

Surface Mount Motorola Preferred Device
COLLECTOR
3
2
1
2 1
BASE EMITTER
MAXIMUM RATINGS (TA = 25°C) CASE 318D–03, STYLE 1
Rating Symbol Value Unit SC–59
Collector–Base Voltage VCBO – 30 Vdc

Collector–Emitter Voltage VCEO – 20 Vdc
Emitter–Base Voltage VEBO – 5.0 Vdc
Collector Current — Continuous IC – 30 mAdc
Power Dissipation PD 200 mW
Storage Temperature Tstg – 55 ~ +150 °C

Collector Cutoff Current ICBO — – 0.1 µAdc
(VCB = –10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage ICEO — –100 µAdc
(VCE = – 20 Vdc, IB = 0)
Emitter–Base Breakdown Voltage IEBO — –10 µAdc
(VEB = – 5.0 Vdc, IC = 0)
(VCE = –10 Vdc, IC = –1.0 mAdc)
(VCB = –10 Vdc, IE = 1.0 mAdc)
DEVICE MARKING
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
(Replaces MSA1022–BT1/D)

MOTOROLA
PNP General Purpose Amplifier MSB709-RT1

Transistor Surface Mount Motorola Preferred Device
COLLECTOR
3
2
1
2 1
BASE EMITTER
Collector–Base Voltage V(BR)CBO – 60 Vdc

Collector–Emitter Voltage V(BR)CEO – 45 Vdc
Emitter–Base Voltage V(BR)EBO – 7.0 Vdc
Collector Current — Peak IC(P) – 200 mAdc

Collector–Emitter Breakdown Voltage (IC = – 2.0 mAdc, IB = 0) V(BR)CEO – 45 — Vdc
Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CBO – 60 — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IE = 0) V(BR)EBO – 7.0 — Vdc
Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0) ICBO — – 0.1 µAdc
Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0) ICEO — –100 nAdc
DC Current Gain(1) hFE1 210 340 —
(VCE = –10 Vdc, IC = – 2.0 mAdc)
Collector–Emitter Saturation Voltage VCE(sat) — – 0.5 Vdc
(IC = –100 mAdc, IB = –10 mAdc)
DEVICE MARKING
Marking Symbol
ARX
REV 3

MOTOROLA
PNP General Purpose Amplifier

MSB710-RT1
Transistor Surface Mount
COLLECTOR
3
2 1
2
BASE EMITTER 1
CASE 318D–04, STYLE 1

SC–59
MAXIMUM RATINGS (TA = 25°C)

Collector–Base Voltage V(BR)CBO – 60 Vdc
Collector–Emitter Voltage V(BR)CEO – 50 Vdc
Emitter–Base Voltage V(BR)EBO – 7.0 Vdc
Collector Current — Continuous IC – 500 mAdc
Collector Current — Peak IC(P) –1.0 Adc
DEVICE MARKING
CRX
replaces MSB710–QT1/D

MSB710-RT1

Collector–Emitter Breakdown Voltage V(BR)CEO – 50 — Vdc
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO – 60 — Vdc
(IC = –10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO – 7.0 — Vdc
(IE = –10 µAdc, IC = 0)
Collector–Base Cutoff Current ICBO — – 0.1 µAdc
(VCB = –20 Vdc, IE = 0)
DC Current Gain(1) —
(VCE = –10 Vdc, IC = –150 mAdc) hFE1 120 240
(VCE = –10 Vdc, IC = 500 mAdc) hFE2 40 —
Collector–Emitter Saturation Voltage VCE(sat) — – 0.6 Vdc
(IC = – 300 mAdc, IB = – 30 mAdc)
Collector–Base Saturation Voltage VBE(sat) — –1.5 Vdc
(IC = – 300 mAdc, IB = – 30 mAdc)
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

MOTOROLA
PNP Silicon General Purpose MSB1218A-RT1

Amplifier Transistor Motorola Preferred Devices
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications. PNP GENERAL
• High hFE, 210 – 460 PURPOSE AMPLIFIER
• Low VCE(sat), < 0.5 V TRANSISTORS
SURFACE MOUNT
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
1
2

MAXIMUM RATINGS (TA = 25°C) SC–70/SOT–323
Collector–Base Voltage V(BR)CBO 45 Vdc
COLLECTOR
Collector–Emitter Voltage V(BR)CEO 45 Vdc 3
Emitter–Base Voltage V(BR)EBO 7.0 Vdc
Collector Current — Peak IC(P) 200 mAdc
DEVICE MARKING
MSB1218A–RT1 = BR
1 2
THERMAL CHARACTERISTICS BASE EMITTER

Storage Temperature Range Tstg – 55 ~ + 150 °C
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 45 — Vdc
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO 45 — Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IE = 0) V(BR)EBO 7.0 — Vdc
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — 0.1 µA
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO — 100 µA
DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340 —
Collector–Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.5 Vdc
REV 2

MSB1218A-RT1
250

TA = 25°C

200 120
150 90
300 µA
250
100 60 200
150
RθJA = 833°C/W 100
50 30
IB = 50 µA
0 0
– 50 0 50 100 150 0 3 6 9 12 15
TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR VOLTAGE (V)
Figure 1. Derating Curve Figure 2. IC – VCE
1000 2

VCE = 10 V TA = 25°C
TA = 25°C
TA = 75°C
1.5
DC CURRENT GAIN
TA = – 25°C
100 1
0.5
10 0
0.1 1 10 100 0.01 0.1 1 10 100
900
800
700
600
500
400
300
TA = 25°C
200
VCE = 5 V
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200

MSB1218A-RT1
13 14
12 12

11 10
10 8
9 6
8 4
7 2
6 0
0 1 2 3 4 0 10 20 30 40
VEB (V) VCB (V)

MOTOROLA
NPN RF Amplifier Transistors MSC2295-BT1

Surface Mount MSC2295-CT1
COLLECTOR
3 Motorola Preferred Devices
3
2 1
2
BASE EMITTER 1
MAXIMUM RATINGS (TA = 25°C)
Collector–Base Voltage V(BR)CBO 30 Vdc SC–59
Collector–Emitter Voltage V(BR)CEO 20 Vdc

Collector–Base Cutoff Current ICBO — 0.1 µAdc
(VCB = 10 Vdc, IE = 0)
(VCB = 10 Vdc, IC = –1.0 mAdc) MSC2295–BT1 70 140
MSC2295–CT1 110 220
Collector–Gain — Bandwidth Product fT 150 — MHz
(VCB = 10 Vdc, IE = –1.0 mAdc)
Reverse Transistor Capacitance Cre — 1.5 pF
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz)
DEVICE MARKING
Marking Symbol
VBX VCX
MSC2295–BT1 MSC2295–CT1

MOTOROLA
NPN RF Amplifier Transistor MSC3130T1

Surface Mount COLLECTOR
2
1
2 1
BASE EMITTER


(VCB = 10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage VCEO 10 — Vdc
(IC = 2.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage VEBO 3.0 — Vdc
(IE = 10 µAdc, IC = 0)
(VCE = 4.0 Vdc, IC = 5.0 mAdc)
Current–Gain — Bandwidth Product fT 1.4 2.5 GHz
(VCB = 4.0 Vdc, IE = –5.0 mAdc)
DEVICE MARKING
Marking Symbol
1SX

MOTOROLA
NPN General Purpose Amplifier

Transistors Surface Mount MSD601-RT1*
COLLECTOR MSD601-ST1
3
3
2 1
MAXIMUM RATINGS (TA = 25°C) BASE EMITTER 2
1
Collector–Emitter Voltage V(BR)CEO 50 Vdc SC–59

Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 7.0 — Vdc
Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO — 0.1 µAdc
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO — 100 nAdc
(VCE = 10 Vdc, IC = 2.0 mAdc) MSD601–RT1 hFE1 210 340
MSD601–ST1 290 460
(VCE = 2.0 Vdc, IC = 100 mAdc) hFE2 90 —
Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.5 Vdc
DEVICE MARKING
Marking Symbol
YRX YSX
MSD601–RT1 MSD601–ST1
REV 2

MOTOROLA
NPN General Purpose Amplifier

Transistor Surface Mount MSD602-RT1
COLLECTOR
3
2
2 1 1
MAXIMUM RATINGS (TA = 25°C) BASE EMITTER
Rating Symbol Value Unit CASE 318D–03, STYLE 1

SC–59
Collector Current — Peak IC(P) 1.0 Adc

Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 50 — Vdc
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 7.0 — Vdc
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — 0.1 µAdc
(VCE = 10 Vdc, IC = 150 mAdc) hFE1 120 240
(VCE = 10 Vdc, IC = 500 mAdc) hFE2 40 —
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 15 pF
DEVICE MARKING
Marking Symbol
WRX
REV 1

MOTOROLA
NPN Low Voltage Output MSD1328-RT1

Amplifier Surface Mount Motorola Preferred Device
COLLECTOR
3
2
1
2 1
BASE EMITTER
Emitter–Base Voltage V(BR)EBO 12 Vdc

Collector–Emitter Breakdown Voltage V(BR)CEO 20 — Vdc
(IC = 1.0 mAdc, IB = 0)
(IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 12 — Vdc
(IE = 10 µAdc, IE = 0)
Collector–Base Cutoff Current ICBO — 0.1 µAdc
(VCB = 25 Vdc, IE = 0)
(VCE = 2.0 Vdc, IC = 500 mAdc)
Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) — 1.2 Vdc
DEVICE MARKING
Marking Symbol
1DRX

MOTOROLA
NPN Silicon General Purpose MSD1819A-RT1

Amplifier Transistor Motorola Preferred Devices
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications. NPN GENERAL
• High hFE, 210 – 460 PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel

1
Collector-Base Voltage V(BR)CBO 60 Vdc 2
Emitter-Base Voltage V(BR)EBO 7.0 Vdc CASE 419–02, STYLE 3
SC–70/SOT–323
DEVICE MARKING COLLECTOR

3
MSD1819A-RT1 = ZR
1 2
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc
Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO 60 — Vdc
Emitter-Base Breakdown Voltage (IE = 10 µAdc, IE = 0) V(BR)EBO 7.0 — Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO — 0.1 µA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO — 100 µA
(VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340
(VCE = 2.0 Vdc, IC = 100 mAdc) hFE2 90 —
Collector-Emitter Saturation Voltage(2) VCE(sat) — 0.5 Vdc
REV 2

MSD1819A-RT1
250 60

TA = 25°C 160 µA

50
200 140 µA
40 120 µA
150
100 µA
30
80 µA
100
20 60 µA
RθJA = 833°C/W 40 µA
50 10 IB = 20 µA
0 0
– 50 0 50 100 150 0 2 4 6 8
TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR VOLTAGE (V)
Figure 1. Derating Curve Figure 2. IC – VCE
1000 2

TA = 25°C VCE = 10 V
TA = 25°C
TA = 75°C
1.5
DC CURRENT GAIN
TA = – 25°C
100 1
0.5
10 0
0.1 1 10 100 0.01 0.1 1 10 100
900
800
700
600
500
400
TA = 25°C
300
VCE = 5 V
200
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200

MSD1819A-RT1
20 7
6
18

5
16
4
14
3
12
2
10 1
0 1 2 3 4 0 10 20 30 40
VEB (V) VCB (V)

MOTOROLA
Bias Resistor Transistor MUN2111T1

SERIES
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system PNP SILICON
cost and board space. The device is housed in the SC–59 package which is designed BIAS RESISTOR
for low power surface mount applications. TRANSISTOR
• Simplifies Circuit Design PIN3
COLLECTOR
• Reduces Board Space (OUTPUT)
• The SC–59 package can be soldered using wave or reflow.
PIN2
The modified gull–winged leads absorb thermal stress duringBASE R2 3
soldering eliminating the possibility of damage to the die. (INPUT) 2
• Available in 8 mm embossed tape and reel PIN1 1
Use the Device Number to order the 7 inch/3000 unit reel. EMITTER
(GROUND)
(SC–59)

Thermal Resistance — Junction–to–Ambient (surface mounted) RθJA 625 °C/W
Maximum Temperature for Soldering Purposes, TL 260 °C

MUN2111T1 6A 10 10
MUN2112T1 6B 22 22
MUN2113T1 6C 47 47
MUN2114T1 6D 10 47
MUN2115T1(2) 6E 10 ∞
MUN2116T1(2) 6F 4.7 ∞
MUN2130T1(2) 6G 1.0 1.0
MUN2131T1(2) 6H 2.2 2.2
MUN2132T1(2) 6J 4.7 4.7
MUN2133T1(2) 6K 4.7 47
MUN2134T1(2) 6L 22 47
REV 5

MUN2111T1 SERIES
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc
Emitter–Base Cutoff Current MUN2111T1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MUN2112T1 — — 0.2
MUN2113T1 — — 0.1
MUN2114T1 — — 0.2
MUN2115T1 — — 0.9
MUN2116T1 — — 1.9
MUN2130T1 — — 4.3
MUN2131T1 — — 2.3
MUN2132T1 — — 1.5
MUN2133T1 — — 0.18
MUN2134T1 — — 0.13
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc
DC Current Gain MUN2111T1 hFE 35 60 —
(VCE = 10 V, IC = 5.0 mA) MUN2112T1 60 100 —
MUN2113T1 80 140 —
MUN2114T1 80 140 —
MUN2115T1 160 250 —
MUN2116T1 160 250 —
MUN2130T1 3.0 5.0 —
MUN2131T1 8.0 15 —
MUN2132T1 15 27 —
MUN2133T1 80 140 —
MUN2134T1 80 130 —
(IC = 10 mA, IB = 0.3 mA) MUN2111T1 — — 0.25
MUN2112T1 — — 0.25
MUN2113T1 — — 0.25
MUN2114T1 — — 0.25
MUN2115T1 — — 0.25
MUN2130T1 — — 0.25
(IC = 10 mA, IB = 5.0 mA) MUN2131T1 — — 0.25
(IC = 10 mA, IB = 1.0 mA) MUN2116T1 — — 0.25
MUN2132T1 — — 0.25
MUN2134T1 — — 0.25
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2111T1 — — 0.2
MUN2112T1 — — 0.2
MUN2114T1 — — 0.2
MUN2115T1 — — 0.2
MUN2116T1 — — 0.2
MUN2130T1 — — 0.2
MUN2131T1 — — 0.2
MUN2132T1 — — 0.2
MUN2133T1 — — 0.2
MUN2134T1 — — 0.2

MUN2111T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2130T1
MUN2116T1
MUN2131T1
MUN2132T1
Input Resistor MUN2111T1 R1 7.0 10 13 kΩ
MUN2112T1 15.4 22 28.6
MUN2113T1 32.9 47 61.1
MUN2114T1 7.0 10 13
MUN2115T1 7.0 10 13
MUN2116T1 3.3 4.7 6.1
MUN2130T1 0.7 1.0 1.3
MUN2131T1 1.5 2.2 2.9
MUN2132T1 3.3 4.7 6.1
MUN2133T1 3.3 4.7 6.1
MUN2134T1 15.4 22 28.6
Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1 R1/R2 0.8 1.0 1.2
MUN2114T1 0.17 0.21 0.25
MUN2115T1/MUN2116T1 — — —
MUN2130T1/MUN2131T1/MUN2132T1 0.8 1.0 1.2
MUN2133T1 0.055 0.1 0.185
MUN2134T1 0.38 0.47 0.56
250
200
150
100
RθJA = 625°C/W
50
0
– 50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve

MUN2111T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN2111T1
1 1000
VCE = 10 V

IC/IB = 10
TA = –25°C
25°C
TA = 75°C
75°C 25°C
0.1 100
–25°C
0.01 10
0 20 40 60 80 1 10 100
4 100
75°C 25°C
f = 1 MHz
lE = 0 V
TA = –25°C
3 TA = 25°C 10
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10
25°C
75°C
0.1
0 10 20 30 40 50

MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2112T1

10 1000

IC/IB = 10 VCE = 10 V
TA = –25°C
25°C
TA = 75°C
1 75°C 25°C
100 –25°C
0.1
0.01 10
0 20 40 60 80 1 10 100
4 100
75°C 25°C
f = 1 MHz
TA = –25°C
lE = 0 V IC, COLLECTOR CURRENT (mA)
TA = 25°C 10
3
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
0.1
0 10 20 30 40 50

MUN2111T1 SERIES
1 1000
IC/IB = 10

TA = 75°C
TA = –25°C 25°C
25°C
75°C –25°C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
1 100
TA = 75°C 25°C
f = 1 MHz
lE = 0 V
0.8 10 –25°C
TA = 25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN2111T1 SERIES

1 180
IC/IB = 10 TA = 75°C

TA = –25°C 160 VCE = 10 V
25°C
140
25°C
0.1 75°C 120 –25°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4.5 100
4 f = 1 MHz TA = 75°C 25°C
lE = 0 V
3.5 TA = 25°C
–25°C
3
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10 +12 V
VO = 0.2 V TA = –25°C
25°C

for PNP BRTs
1
LOAD
0.1
0 10 20 30 40 50

MOTOROLA

SERIES
by integrating them into a single device. The use of a BRT can reduce both system NPN SILICON
cost and board space. The device is housed in the SC–59 package which is designed BIAS RESISTOR
for low power surface mount applications. TRANSISTOR
• Reduces Component Count PIN3
COLLECTOR
• The SC–59 package can be soldered using wave or reflow. (OUTPUT)
The modified gull–winged leads absorb thermal stress during 3
R1
soldering eliminating the possibility of damage to the die. 2
PIN2 R2
• Available in 8 mm embossed tape and reel BASE
1
Use the Device Number to order the 7 inch/3000 unit reel. (INPUT)
PIN1 CASE 318D–03, STYLE 1
EMITTER (SC–59)
(GROUND)

MUN2211T1 8A 10 10
MUN2212T1 8B 22 22
MUN2213T1 8C 47 47
MUN2214T1 8D 10 47
MUN2215T1(2) 8E 10 ∞
MUN2216T1(2) 8F 4.7 ∞
MUN2230T1(2) 8G 1.0 1.0
MUN2231T1(2) 8H 2.2 2.2
MUN2232T1(2) 8J 4.7 4.7
MUN2233T1(2) 8K 4.7 47
MUN2234T1(2) 8L 22 47
REV 4

MUN2211T1 SERIES
OFF CHARACTERISTICS
(VEB = 6.0 V, IC = 0) MUN2212T1 — — 0.2
MUN2213T1 — — 0.1
MUN2214T1 — — 0.2
MUN2215T1 — — 0.9
MUN2216T1 — — 1.9
MUN2230T1 — — 4.3
MUN2231T1 — — 2.3
MUN2232T1 — — 1.5
MUN2233T1 — — 0.18
MUN2234T1 — — 0.13
(VCE = 10 V, IC = 5.0 mA) MUN2212T1 60 100 —
MUN2213T1 80 140 —
MUN2214T1 80 140 —
MUN2215T1 160 350 —
MUN2216T1 160 350 —
MUN2230T1 3.0 5.0 —
MUN2231T1 8.0 15 —
MUN2232T1 15 30 —
MUN2233T1 80 200 —
MUN2234T1 80 150 —
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) — — 0.25 Vdc
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
MUN2212T1 — — 0.2
MUN2214T1 — — 0.2
MUN2215T1 — — 0.2 Vdc
MUN2216T1 — — 0.2
MUN2230T1 — — 0.2
MUN2231T1 — — 0.2
MUN2232T1 — — 0.2
MUN2233T1 — — 0.2
MUN2234T1 — — 0.2

MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
MUN2216T1
MUN2233T1
MUN2212T1 15.4 22 28.6
MUN2213T1 32.9 47 61.1
MUN2214T1 7.0 10 13
MUN2215T1 7.0 10 13
MUN2216T1 3.3 4.7 6.1
MUN2230T1 0.7 1.0 1.3
MUN2231T1 1.5 2.2 2.9
MUN2232T1 3.3 4.7 6.1
MUN2233T1 3.3 4.7 6.1
MUN2234T1 15.4 22 28.6
MUN2214T1 0.17 0.21 0.25
MUN2215T1/MUN2216T1 — — —
MUN2230T1/MUN2231T1/MUN2232T1 0.8 1.0 1.2
MUN2233T1 0.055 0.1 0.185
MUN2234T1 0.38 0.47 0.56
250
200
150
100
RθJA = 625°C/W
50
0
– 50 0 50 100 150

MUN2211T1 SERIES

1 1000

IC/IB = 10 VCE = 10 V
TA = –25°C
TA = 75°C
25°C
0.1 75°C 25°C
–25°C
100
0.01
0.001 10
0 20 40 60 80 1 10 100
4 100
25°C
f = 1 MHz 75°C
IE = 0 V 10 TA = –25°C
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN2211T1 SERIES
1 1000
VCE = 10 V

IC/IB = 10 TA = –25°C
25°C TA = 75°C
25°C
75°C
0.1
–25°C
100
0.01
0.001 10
0 20 40 60 80 1 10 100
4 100 75°C 25°C

f = 1 MHz
TA = –25°C
IE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
10
75°C 25°C
0.1
0 10 20 30 40 50

MUN2211T1 SERIES

10 1000
IC/IB = 10 TA = –25°C

VCE = 10 V
TA = 75°C
25°C 75°C
1 25°C
–25°C
100
0.1
0.01 10
0 20 40 60 80 1 10 100
1 100
75°C 25°C
f = 1 MHz
IE = 0 V
0.8 10 TA = –25°C
TA = 25°C IC, COLLECTOR CURRENT (mA)
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN2211T1 SERIES
1 300
IC/IB = 10 TA = –25°C TA = 75°C

VCE = 10
250
25°C 25°C
0.1 200
–25°C
75°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4 100
f = 1 MHz 75°C 25°C

3.5
lE = 0 V
3 TA = 25°C
2.5
TA = –25°C
2 10
1.5
0.5 VO = 5 V
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
TA = –25°C
VO= 0.2 V
25°C
75°C
1
0.1
0 10 20 30 40 50

MUN2211T1 SERIES
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD

MOTOROLA
Dual Bias Resistor Transistors MUN5111DW1T1

PNP Silicon Surface Mount Transistors with
SERIES
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
6
resistor. These digital transistors are designed to replace a single device and its 5
external resistor bias network. The BRT eliminates these individual components by 4
integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices 1
2
are housed in the SOT–363 package which is ideal for low–power surface mount 3
applications where board space is at a premium. CASE 419B–01, STYLE 1
• Simplifies Circuit Design SOT–363

• Reduces Component Count (3) (2) (1)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
R1 R2
Q1
Q2
R2
R1
(4) (5) (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Collector–Base Voltage VCBO – 50 Vdc
Total Package Dissipation @ TA = 25°C(1) PD *150 mW
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES
MUN5111DW1T1 0A 10 10
MUN5112DW1T1 0B 22 22
MUN5113DW1T1 0C 47 47
MUN5114DW1T1 0D 10 47
MUN5115DW1T1(2) 0E 10 ∞
MUN5116DW1T1(2) 0F 4.7 ∞
MUN5130DW1T1(2) 0G 1.0 1.0
MUN5131DW1T1(2) 0H 2.2 2.2
MUN5132DW1T1(2) 0J 4.7 4.7
MUN5133DW1T1(2) 0K 4.7 47
MUN5134DW1T1(2) 0L 22 47
MUN5135DW1T1(2) 0M 2.2 47
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
REV 2

MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = –50 V, IE = 0) ICBO — — –100 nAdc
Collector–Emitter Cutoff Current (VCE = – 50 V, IB = 0) ICEO — — –500 nAdc
Emitter–Base Cutoff Current MUN5111DW1T1 IEBO — — –0.5 mAdc
(VEB = – 6.0 V, IC = 0) MUN5112DW1T1 — — –0.2
MUN5113DW1T1 — — –0.1
MUN5114DW1T1 — — –0.2
MUN5115DW1T1 — — –0.9
MUN5116DW1T1 — — –1.9
MUN5130DW1T1 — — –4.3
MUN5131DW1T1 — — –2.3
MUN5132DW1T1 — — –1.5
MUN5133DW1T1 — — –0.18
MUN5134DW1T1 — — –0.13
MUN5135DW1T1 — — –0.2
Collector–Base Breakdown Voltage (IC = –10 µA, IE = 0) V(BR)CBO – 50 — — Vdc
Collector–Emitter Breakdown Voltage(3) (IC = – 2.0 mA, IB = 0) V(BR)CEO –50 — — Vdc
DC Current Gain MUN5111DW1T1 hFE 35 60 —
(VCE = –10 V, IC = – 5.0 mA) MUN5112DW1T1 60 100 —
MUN5113DW1T1 80 140 —
MUN5114DW1T1 80 140 —
MUN5115DW1T1 160 250 —
MUN5116DW1T1 160 250 —
MUN5130DW1T1 3.0 5.0 —
MUN5131DW1T1 8.0 15 —
MUN5132DW1T1 15 27 —
MUN5133DW1T1 80 140 —
MUN5134DW1T1 80 130 —
MUN5135DW1T1 80 140 —
Collector–Emitter Saturation Voltage (IC = –10 mA, IE = –0.3 mA) VCE(sat) — — – 0.25 Vdc
(IC = –10 mA, IB = – 5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = –10 mA, IB = –1 mA) MUN5115DW1T1/MUN5116DW1T1/
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
(VCC = –5.0 V, VB = –2.5 V, RL = 1.0 kΩ) MUN5111DW1T1 — — –0.2
MUN5112DW1T1 — — –0.2
MUN5114DW1T1 — — –0.2
MUN5115DW1T1 — — –0.2
MUN5116DW1T1 — — –0.2
MUN5130DW1T1 — — –0.2
MUN5131DW1T1 — — –0.2
MUN5132DW1T1 — — –0.2
MUN5133DW1T1 — — –0.2
MUN5134DW1T1 — — –0.2
MUN5135DW1T1 — — –0.2
(VCC = –5.0 V, VB = – 3.5 V, RL = 1.0 kΩ) MUN5113DW1T1 — — –0.2

MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Output Voltage (off) (VCC = –5.0 V, VB = –0.5 V, RL = 1.0 kΩ) VOH – 4.9 — — Vdc
(VCC = –5.0 V, VB = –0.050 V, RL = 1.0 kΩ) MUN5130DW1T1
(VCC = –5.0 V, VB = – 0.25 V, RL = 1.0 kΩ) MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5132DW1T1
Input Resistor MUN5111DW1T1 R1 7.0 10 13 kΩ
MUN5112DW1T1 15.4 22 28.6
MUN5113DW1T1 32.9 47 61.1
MUN5114DW1T1 7.0 10 13
MUN5115DW1T1 7.0 10 13
MUN5116DW1T1 3.3 4.7 6.1
MUN5130DW1T1 0.7 1.0 1.3
MUN5131DW1T1 1.5 2.2 2.9
MUN5132DW1T1 3.3 4.7 6.1
MUN5133DW1T1 3.3 4.7 6.1
MUN5134DW1T1 15.4 22 28.6
MUN5135DW1T1 1.54 2.2 2.86
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/MUN5113DW1T1 R1/R2 0.8 1.0 1.2
MUN5114DW1T1 0.17 0.21 0.25
MUN5115DW1T1/MUN5116DW1T1 — — —
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 0.8 1.0 1.2
MUN5133DW1T1 0.055 0.1 0.185
MUN5134DW1T1 0.38 0.47 0.56
MUN5135DW1T1 0.038 0.047 0.056
250
200
150
100
RθJA = 833°C/W
50
0
– 50 0 50 100 150

MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
1 1000
VCE = 10 V

IC/IB = 10
TA = –25°C TA = 75°C
25°C
0.1 100
25°C –25°C
75°C
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
lE = 0 V IC, COLLECTOR CURRENT (mA) TA = –25°C
3 TA = 25°C 10
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10
25°C
75°C
0.1
0 10 20 30 40 50

MUN5111DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C 25°C
TA = –25°C 100 –25°C
75°C
0.1
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
TA = –25°C
lE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
0.1
0 10 20 30 40 50

MUN5111DW1T1 SERIES

1 1000
IC/IB = 10

TA = 75°C
TA = –25°C 25°C 25°C
75°C –25°C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
1 100
TA = 75°C 25°C
f = 1 MHz
lE = 0 V
0.8 TA = 25°C IC, COLLECTOR CURRENT (mA) 10 –25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5111DW1T1 SERIES
1 180
TA = 75°C

IC/IB = 10 160 VCE = 10 V
TA = –25°C
25°C
140
25°C
0.1 120 –25°C
75°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4.5 100
4 f = 1 MHz TA = 75°C 25°C
lE = 0 V
3.5 TA = 25°C
3 –25°C
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
VO = 0.2 V 25°C
TA = –25°C
75°C
0.1
0 10 20 30 40 50

MUN5111DW1T1 SERIES
1000
HFE, DC CURRENT GAIN (NORMALIZED)

TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0 10 100
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0 10 100

MOTOROLA

by integrating them into a single device. The use of a BRT can reduce both system PNP SILICON
cost and board space. The device is housed in the SC–70/SOT–323 package which BIAS RESISTOR
is designed for low power surface mount applications. TRANSISTOR
• Reduces Component Count PIN3
COLLECTOR
• The SC–70/SOT–323 package can be soldered using (OUTPUT)
wave or reflow. The modified gull–winged leads absorb 3
R1
thermal stress during soldering eliminating the possibility
of damage to the die. PIN1 R2
BASE 1
• Available in 8 mm embossed tape and reel (INPUT) 2
Use the Device Number to order the 7 inch/3000 unit reel. PIN2
Replace “T1” with “T3” in the Device Number to order EMITTER
SC–70/SOT–323
(GROUND)
the 13 inch/10,000 unit reel.


MUN5111T1 6A 10 10
MUN5112T1 6B 22 22
MUN5113T1 6C 47 47
MUN5114T1 6D 10 47
MUN5115T1(2) 6E 10 ∞
MUN5116T1(2) 6F 4.7 ∞
MUN5130T1(2) 6G 1.0 1.0
MUN5131T1(2) 6H 2.2 2.2
MUN5132T1(2) 6J 4.7 4.7
MUN5133T1(2) 6K 4.7 47
MUN5134T1(2) 6L 22 47
REV 2

MUN5111T1 SERIES
OFF CHARACTERISTICS
(VEB = 6.0 V, IC = 0) MUN5112T1 — — 0.2
MUN5113T1 — — 0.1
MUN5114T1 — — 0.2
MUN5115T1 — — 0.9
MUN5116T1 — — 1.9
MUN5130T1 — — 4.3
MUN5131T1 — — 2.3
MUN5132T1 — — 1.5
MUN5133T1 — — 0.18
MUN5134T1 — — 0.13
(VCE = 10 V, IC = 5.0 mA) MUN5112T1 60 100 —
MUN5113T1 80 140 —
MUN5114T1 80 140 —
MUN5115T1 160 250 —
MUN5116T1 160 250 —
MUN5130T1 3.0 5.0 —
MUN5131T1 8.0 15 —
MUN5132T1 15 27 —
MUN5133T1 80 140 —
MUN5134T1 80 130 —
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) VCE(sat) — — 0.25 Vdc
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5112T1 — — 0.2
MUN5114T1 — — 0.2
MUN5115T1 — — 0.2
MUN5116T1 — — 0.2
MUN5130T1 — — 0.2
MUN5131T1 — — 0.2
MUN5132T1 — — 0.2
MUN5133T1 — — 0.2
MUN5134T1 — — 0.2

MUN5111T1 SERIES
MUN5116T1
MUN5131T1
MUN5132T1
MUN5112T1 15.4 22 28.6
MUN5113T1 32.9 47 61.1
MUN5114T1 7.0 10 13
MUN5115T1 7.0 10 13
MUN5116T1 3.3 4.7 6.1
MUN5130T1 0.7 1.0 1.3
MUN5131T1 1.5 2.2 2.9
MUN5132T1 3.3 4.7 6.1
MUN5133T1 3.3 4.7 6.1
MUN5134T1 15.4 22 28.6
MUN5114T1 0.17 0.21 0.25
MUN5115T1/MUN5116T1 — — —
MUN5130T1/MUN5131T1/MUN5132T1 0.8 1.0 1.2
MUN5133T1 0.055 0.1 0.185
MUN5134T1 0.38 0.47 0.56
250
200
150
100
RθJA = 833°C/W
50
0
– 50 0 50 100 150

MUN5111T1 SERIES
1 1000
VCE = 10 V

IC/IB = 10
TA = –25°C TA = 75°C
25°C
0.1 100
25°C –25°C
75°C
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
3 TA = 25°C 10
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10
25°C
75°C
0.1
0 10 20 30 40 50

MUN5111T1 SERIES
10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C 25°C
TA = –25°C 100 –25°C
75°C
0.1
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
TA = –25°C
lE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
0.1
0 10 20 30 40 50

MUN5111T1 SERIES

1 1000
IC/IB = 10

TA = 75°C
TA = –25°C 25°C 25°C
75°C –25°C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
1 100
TA = 75°C 25°C
f = 1 MHz
lE = 0 V
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5111T1 SERIES
1 180
TA = 75°C

IC/IB = 10 160 VCE = 10 V
TA = –25°C
25°C
140
25°C
0.1 120 –25°C
75°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4.5 100
4 f = 1 MHz TA = 75°C 25°C
lE = 0 V
3.5 TA = 25°C
3 –25°C
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10 +12 V
VO = 0.2 V 25°C
TA = –25°C
for PNP BRTs
1
LOAD
0.1
0 10 20 30 40 50

MOTOROLA

SERIES
NPN Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single 6
5
device and its external resistor bias network. The BRT eliminates these 4
individual components by integrating them into a single device. In the
MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 1
2
3
package which is ideal for low power surface mount applications where board
space is at a premium. CASE 419B–01, STYLE 1
SOT–363
(3) (2) (1)
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel. R1 R2
Q1
Q2
R2
R1
(4) (5) (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
MUN5211DW1T1 7A 10 10
MUN5212DW1T1 7B 22 22
MUN5213DW1T1 7C 47 47
MUN5214DW1T1 7D 10 47
MUN5215DW1T1(2) 7E 10 ∞
MUN5216DW1T1(2) 7F 4.7 ∞
MUN5230DW1T1(2) 7G 1.0 1.0
MUN5231DW1T1(2) 7H 2.2 2.2
MUN5232DW1T1(2) 7J 4.7 4.7
MUN5233DW1T1(2) 7K 4.7 47
MUN5234DW1T1(2) 7L 22 47
MUN5235DW1T1(2) 7M 2.2 47
REV 2

MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
OFF CHARACTERISTICS
Emitter-Base Cutoff Current MUN5211DW1T1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MUN5212DW1T1 — — 0.2
MUN5213DW1T1 — — 0.1
MUN5214DW1T1 — — 0.2
MUN5215DW1T1 — — 0.9
MUN5216DW1T1 — — 1.9
MUN5230DW1T1 — — 4.3
MUN5231DW1T1 — — 2.3
MUN5232DW1T1 — — 1.5
MUN5233DW1T1 — — 0.18
MUN5234DW1T1 — — 0.13
MUN5235DW1T1 — — 0.2
(VCE = 10 V, IC = 5.0 mA) MUN5212DW1T1 60 100 —
MUN5213DW1T1 80 140 —
MUN5214DW1T1 80 140 —
MUN5215DW1T1 160 350 —
MUN5216DW1T1 160 350 —
MUN5230DW1T1 3.0 5.0 —
MUN5231DW1T1 8.0 15 —
MUN5232DW1T1 15 30 —
MUN5233DW1T1 80 200 —
MUN5234DW1T1 80 150 —
MUN5235DW1T1 80 140 —
(IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5211lDW1T1 — — 0.2
MUN5212DW1T1 — — 0.2
MUN5214DW1T1 — — 0.2
MUN5215DW1T1 — — 0.2
MUN5216DW1T1 — — 0.2
MUN5230DW1T1 — — 0.2
MUN5231DW1T1 — — 0.2
MUN5232DW1T1 — — 0.2
MUN5233DW1T1 — — 0.2
MUN5234DW1T1 — — 0.2
MUN5235DW1T1 — — 0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5213DW1T1 — — 0.2

MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5230DW1T1
MUN5216DW1T1
MUN5233DW1T1
MUN5212DW1T1 15.4 22 28.6
MUN5213DW1T1 32.9 47 61.1
MUN5214DW1T1 7.0 10 13
MUN5215DW1T1 7.0 10 13
MUN5216DW1T1 3.3 4.7 6.1
MUN5230DW1T1 0.7 1.0 1.3
MUN5231DW1T1 1.5 2.2 2.9
MUN5232DW1T1 3.3 4.7 6.1
MUN5233DW1T1 3.3 4.7 6.1
MUN5234DW1T1 15.4 22 28.6
MUN5235DW1T1 1.54 2.2 2.86
MUN5214DW1T1 0.17 0.21 0.25
MUN5215DW1T1/MUN5216DW1T1 — — —
MUN5233DW1T1 0.055 0.1 0.185
MUN5234DW1T1 0.38 0.47 0.56
MUN5235DW1T1 0.038 0.047 0.056
250
200
150
100
RθJA = 833°C/W
50
0
– 50 0 50 100 150

MUN5211DW1T1 SERIES
1 1000

IC/IB = 10 TA = –25°C VCE = 10 V
25°C
TA = 75°C
0.1 25°C
–25°C
75°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100
25°C
f = 1 MHz 75°C
IE = 0 V IC, COLLECTOR CURRENT (mA)
10 TA = –25°C
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5211DW1T1 SERIES

1 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
25°C 25°C
TA = –25°C
0.1
75°C –25°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100 75°C 25°C

f = 1 MHz
TA = –25°C
IE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
10
75°C 25°C
0.1
0 10 20 30 40 50

MUN5211DW1T1 SERIES
10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C
–25°C
TA = –25°C 25°C 100
0.1 75°C
0.01 10
0 20 40 50 1 10 100
1 100
f = 1 MHz 25°C
75°C
IE = 0 V
0.8 TA = 25°C IC, COLLECTOR CURRENT (mA) 10 TA = –25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5211DW1T1 SERIES

1 300
TA = 75°C

IC/IB = 10 VCE = 10
TA = –25°C 250
25°C 25°C
0.1 200
75°C –25°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4 100
3.5 f = 1 MHz TA = 75°C 25°C

3 TA = 25°C
2.5 –25°C
2 10
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5211DW1T1 SERIES
1000

TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0 10 100
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0 10 100

MOTOROLA

This new series of digital transistors is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use NPN SILICON
of a BRT can reduce both system cost and board space. The device is housed BIAS RESISTOR
in the SC-70/SOT-323 package which is designed for low power surface mount TRANSISTORS
applications.
• Reduces Board Space PIN3
COLLECTOR
• Reduces Component Count (OUTPUT)
• The SC-70/SOT-323 package can be soldered using R1 3
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility PIN1 R2
BASE 1
of damage to the die. (INPUT) 2
• Available in 8 mm embossed tape and reel PIN2
Use the Device Number to order the 7 inch/3000 unit reel. EMITTER CASE 419-02, STYLE 3
(GROUND)
Replace “T1” with “T3” in the Device Number to order the SC-70/SOT-323
13 inch/10,000 unit reel.

MUN5211T1 8A 10 10
MUN5212T1 8B 22 22
MUN5213T1 8C 47 47
MUN5214T1 8D 10 47
MUN5215T1(2) 8E 10 ∞
MUN5216T1(2) 8F 4.7 ∞
MUN5230T1(2) 8G 1.0 1.0
MUN5231T1(2) 8H 2.2 2.2
MUN5232T1(2) 8J 4.7 4.7
MUN5233T1(2) 8K 4.7 47
MUN5234T1(2) 8L 22 47
REV 2

MUN5211T1 SERIES
OFF CHARACTERISTICS
Emitter-Base Cutoff Current MUN5211T1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MUN5212T1 — — 0.2
MUN5213T1 — — 0.1
MUN5214T1 — — 0.2
MUN5215T1 — — 0.9
MUN5216T1 — — 1.9
MUN5230T1 — — 4.3
MUN5231T1 — — 2.3
MUN5232T1 — — 1.5
MUN5233T1 — — 0.18
MUN5234T1 — — 0.13
(VCE = 10 V, IC = 5.0 mA) MUN5212T1 60 100 —
MUN5213T1 80 140 —
MUN5214T1 80 140 —
MUN5215T1 160 350 —
MUN5216T1 160 350 —
MUN5230T1 3.0 5.0 —
MUN5231T1 8.0 15 —
MUN5232T1 15 30 —
MUN5233T1 80 200 —
MUN5234T1 80 150 —
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5211lT1 — — 0.2
MUN5212T1 — — 0.2
MUN5214T1 — — 0.2
MUN5215T1 — — 0.2
MUN5216T1 — — 0.2
MUN5230T1 — — 0.2
MUN5231T1 — — 0.2
MUN5232T1 — — 0.2
MUN5233T1 — — 0.2
MUN5234T1 — — 0.2

MUN5211T1 SERIES
MUN5216T1
MUN5233T1
MUN5212T1 15.4 22 28.6
MUN5213T1 32.9 47 61.1
MUN5214T1 7.0 10 13
MUN5215T1 7.0 10 13
MUN5216T1 3.3 4.7 6.1
MUN5230T1 0.7 1.0 1.3
MUN5231T1 1.5 2.2 2.9
MUN5232T1 3.3 4.7 6.1
MUN5233T1 3.3 4.7 6.1
MUN5234T1 15.4 22 28.6
MUN5214T1 0.17 0.21 0.25
MUN5215T1/MUN5216T1 — — —
MUN5230T1/MUN5231T1/MUN5232T1 0.8 1.0 1.2
MUN5233T1 0.055 0.1 0.185
MUN5234T1 0.38 0.47 0.56
250
200
150
100
RθJA = 833°C/W
50
0
– 50 0 50 100 150

MUN5211T1 SERIES
1 1000

IC/IB = 10 TA = –25°C VCE = 10 V
25°C
TA = 75°C
0.1 25°C
–25°C
75°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100
25°C
f = 1 MHz 75°C
10 TA = –25°C
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5211T1 SERIES

1 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
25°C 25°C
TA = –25°C
0.1
75°C –25°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100 75°C 25°C

f = 1 MHz
TA = –25°C
IE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
10
75°C 25°C
0.1
0 10 20 30 40 50

MUN5211T1 SERIES
10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C
–25°C
TA = –25°C 25°C 100
0.1 75°C
0.01 10
0 20 40 50 1 10 100
1 100
f = 1 MHz 25°C
75°C
IE = 0 V
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5211T1 SERIES

1 300
TA = 75°C

IC/IB = 10 VCE = 10
TA = –25°C 250
25°C 25°C
0.1 200
75°C –25°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4 100
3.5 f = 1 MHz TA = 75°C 25°C

3 TA = 25°C
2.5 –25°C
2 10
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5211T1 SERIES
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
VCC
OUT
IN
LOAD

MOTOROLA

SERIES
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single 6
5
device and its external resistor bias network. The BRT eliminates these
4
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the 1
2
SOT–363 package which is ideal for low power surface mount applications 3
where board space is at a premium. CASE 419B–01, STYLE 1
SOT–363
• Reduces Component Count (3) (2) (1)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel. R1 R2

Q1
Q2
R2
R1
(4) (5) (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
MUN5311DW1T1 11 10 10
MUN5312DW1T1 12 22 22
MUN5313DW1T1 13 47 47
MUN5314DW1T1 14 10 47
MUN5315DW1T1(2) 15 10 ∞
MUN5316DW1T1(2) 16 4.7 ∞
MUN5330DW1T1(2) 30 1.0 1.0
MUN5331DW1T1(2) 31 2.2 2.2
MUN5332DW1T1(2) 32 4.7 4.7
MUN5333DW1T1(2) 33 4.7 47
MUN5334DW1T1(2) 34 22 47
MUN5335DW1T1(2) 35 2.2 47
REV 4

MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
OFF CHARACTERISTICS
Emitter-Base Cutoff Current MUN5311DW1T1 IEBO — — 0.5 mAdc
(VEB = 6.0 V, IC = 0) MUN5312DW1T1 — — 0.2
MUN5313DW1T1 — — 0.1
MUN5314DW1T1 — — 0.2
MUN5315DW1T1 — — 0.9
MUN5316DW1T1 — — 1.9
MUN5330DW1T1 — — 4.3
MUN5331DW1T1 — — 2.3
MUN5332DW1T1 — — 1.5
MUN5333DW1T1 — — 0.18
MUN5334DW1T1 — — 0.13
MUN5335DW1T1 — — 0.2
(VCE = 10 V, IC = 5.0 mA) MUN5312DW1T1 60 100 —
MUN5313DW1T1 80 140 —
MUN5314DW1T1 80 140 —
MUN5315DW1T1 160 350 —
MUN5316DW1T1 160 350 —
MUN5330DW1T1 3.0 5.0 —
MUN5331DW1T1 8.0 15 —
MUN5332DW1T1 15 30 —
MUN5333DW1T1 80 200 —
MUN5334DW1T1 80 150 —
MUN5335DW1T1 80 140 —
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5311lDW1T1 — — 0.2
MUN5312DW1T1 — — 0.2
MUN5314DW1T1 — — 0.2
MUN5315DW1T1 — — 0.2
MUN5316DW1T1 — — 0.2
MUN5330DW1T1 — — 0.2
MUN5331DW1T1 — — 0.2
MUN5332DW1T1 — — 0.2
MUN5333DW1T1 — — 0.2
MUN5334DW1T1 — — 0.2
MUN5335DW1T1 — — 0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5313DW1T1 — — 0.2

MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
(Continued)
MUN5316DW1T1
MUN5333DW1T1
MUN5312DW1T1 15.4 22 28.6
MUN5313DW1T1 32.9 47 61.1
MUN5314DW1T1 7.0 10 13
MUN5315DW1T1 7.0 10 13
MUN5316DW1T1 3.3 4.7 6.1
MUN5330DW1T1 0.7 1.0 1.3
MUN5331DW1T1 1.5 2.2 2.9
MUN5332DW1T1 3.3 4.7 6.1
MUN5333DW1T1 3.3 4.7 6.1
MUN5334DW1T1 15.4 22 28.6
MUN5335DW1T1 1.54 2.2 2.86
MUN5314DW1T1 0.17 0.21 0.25
MUN5315DW1T1/MUN5316DW1T1 — — —
MUN5333DW1T1 0.055 0.1 0.185
MUN5334DW1T1 0.38 0.47 0.56
MUN5335DW1T1 0.038 0.047 0.056
250
200
150
100
RθJA = 833°C/W
50
0
– 50 0 50 100 150

MUN5311DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 NPN TRANSISTOR
1 1000

IC/IB = 10 TA = –25°C VCE = 10 V
25°C
TA = 75°C
0.1 25°C
–25°C
75°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100
25°C
f = 1 MHz 75°C
10 TA = –25°C
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 PNP TRANSISTOR
1 1000
VCE = 10 V

IC/IB = 10
TA = –25°C TA = 75°C
25°C
0.1 100
25°C –25°C
75°C
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
3 TA = 25°C 10
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
Figure 9. Output Capacitance Figure 10. Output Current versus Input

Voltage
100
VO = 0.2 V
TA = –25°C
10
25°C
75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES
1 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
25°C 25°C
TA = –25°C
0.1
75°C –25°C
100
0.01
0.001 10
0 20 40 50 1 10 100
4 100 75°C 25°C

f = 1 MHz
TA = –25°C
IE = 0 V
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
10
75°C 25°C
0.1
0 10 20 30 40 50
Figure 16. Input Voltage versus Output

Current

MUN5311DW1T1 SERIES

10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C 25°C
TA = –25°C 100 –25°C
75°C
0.1
0.01 10
0 20 40 50 1 10 100
4 100
75°C 25°C
f = 1 MHz
TA = –25°C
10
3 TA = 25°C
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES
10 1000
VCE = 10 V

IC/IB = 10
TA = 75°C
1 25°C
–25°C
TA = –25°C 25°C 100
0.1 75°C
0.01 10
0 20 40 50 1 10 100
1 100
f = 1 MHz 25°C
75°C
IE = 0 V
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES

1 1000
IC/IB = 10

TA = 75°C
TA = –25°C 25°C 25°C
75°C –25°C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
1 100
TA = 75°C 25°C
f = 1 MHz
lE = 0 V
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES
1 300
TA = 75°C

IC/IB = 10 VCE = 10
TA = –25°C 250
25°C 25°C
0.1 200
75°C –25°C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4 100
3.5 f = 1 MHz TA = 75°C 25°C

lE = 0 V
3 TA = 25°C
2.5 –25°C
2 10
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
VO = 0.2 V TA = –25°C
25°C
75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES

1 180
TA = 75°C

IC/IB = 10 160 VCE = 10 V
TA = –25°C
25°C
140
25°C
0.1 120 –25°C
75°C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
4.5 100
4 f = 1 MHz TA = 75°C 25°C
lE = 0 V
3.5 TA = 25°C
3 –25°C
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
10
VO = 0.2 V 25°C
TA = –25°C
75°C
0.1
0 10 20 30 40 50

MUN5311DW1T1 SERIES
1000 1000

TA = 25°C TA = 25°C
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
100 100
1.0 10 100 1.0 10 100
Figure 42. DC Current Gain — PNP Figure 43. DC Current Gain — NPN
1000 1000
TA = 25°C TA = 25°C
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
100 100
1.0 10 100 1.0 10 100
Figure 44. DC Current Gain — PNP Figure 45. DC Current Gain — NPN

MOTOROLA
NPN Silicon
COLLECTOR
P2N2222A
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
2

Temperature Range

OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCB = 60 Vdc, IE = 0) — 0.01
(VCB = 60 Vdc, IE = 0, TA = 150°C) — 10
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO — 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX — 20 nAdc

P2N2222A
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) 35 —
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50 —
(IC = 500 mAdc, VCE = 10 Vdc)(1) 40 —
(IC = 150 mAdc, IB = 15 mAdc) — 0.3
(IC = 500 mAdc, IB = 50 mAdc) — 1.0
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) — 2.0

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 4.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rb′Cc — 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
Delay Time ( CC = 30 Vdc, VBE(off) = –2.0 Vdc,
(V td — 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns
Ad ) (Fi
(Figure 2)


P2N2222A
+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200
0 0
1 kΩ –14 V 1k CS* < 10 pF
–2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
1000
700
500 TJ = 125°C
300
200
25°C
100
70
–55°C
50
30 VCE = 1.0 V
20 VCE = 10 V
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k

1.0
TJ = 25°C
0.8
0.6 IC = 1.0 mA 10 mA 150 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

P2N2222A
200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts – 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
100
td @ VEB(off) = 0
t, TIME (ns)
30
t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
10 10
500 µA, RS = 200 Ω IC = 50 µA

100 µA, RS = 2.0 kΩ 100 µA
6.0 50 µA, RS = 4.0 kΩ 6.0 500 µA
1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)
10 200
7.0
5.0
100
Ccb
3.0 70
2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

P2N2222A
1.0 +0.5
TJ = 25°C

V, VOLTAGE (VOLTS)
1.0 V – 0.5
0.6
VBE(on) @ VCE = 10 V – 1.0
0.4
– 1.5
0.2
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

MOTOROLA
PNP Silicon
COLLECTOR
P2N2907A
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
2
Collector – Emitter Voltage VCEO –60 Vdc 3

Emitter – Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA)
Temperature Range

OFF CHARACTERISTICS
(IC = –10 mAdc, IB = 0)
(IC = –10 mAdc, IE = 0)
(IE = –10 mAdc, IC = 0)
(VCB = –50 Vdc, IE = 0) — –0.01
(VCB = –50 Vdc, IE = 0, TA = 150°C) — –10
(VEB = –3.0 Vdc)
Collector Cutoff Current ICEO — –10 nAdc
(VCE = –10 V)
Base Cutoff Current IBEX — –50 nAdc

P2N2907A
ON CHARACTERISTICS
(IC = –0.1 mAdc, VCE = –10 Vdc) 75 —
(IC = –1.0 mAdc, VCE = –10 Vdc) 100 —
(IC = –10 mAdc, VCE = –10 Vdc) 100 —
(IC = –150 mAdc, VCE = –10 Vdc)(1) 100 300
(IC = –500 mAdc, VCE = –10 Vdc)(1) 50 —
(IC = –150 mAdc, IB = –15 mAdc) — –0.4
(IC = –500 mAdc, IB = –50 mAdc) — –1.6
(IC = –150 mAdc, IB = –15 mAdc) — –1.3
(IC = –500 mAdc, IB = –50 mAdc) — –2.6

Current – Gain — Bandwidth Product(1), (2) fT 200 — MHz
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
(VCC = –30
30 Vdc,
Vd IC = –150
150 mAdc,
Ad
IB1 = –15
15 mAdc) (Figures 1 and 5)
(VCC = –6.0
6 0 Vd
Vdc, IC = –150
150 mAdc,
Ad
IB1 = IB2 = –15
15 mAdc) (Figure 2)

300 ms, Duty Cycle 2.0%.v
INPUT INPUT
Zo = 50 Ω –30 V Zo = 50 Ω +15 V –6.0 V
1.0 k 37
P.W. < 200 ns P.W. < 200 ns
1.0 k 1.0 k
–16 V 50 –30 V 50 1N916
200 ns 200 ns

P2N2907A
3.0
VCE = –1.0 V
2.0 VCE = –10 V TJ = 125°C
25°C
1.0
0.7 – 55°C
0.5
0.3
0.2
–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

–1.0
–0.8
IC = –1.0 mA –10 mA –100 mA –500 mA
–0.6
–0.4
–0.2
0
–0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
300 500
200 300 VCC = –30 V
VCC = –30 V
IC/IB = 10 200 IC/IB = 10
100 tr
70 100 TJ = 25°C
50
t, TIME (ns)
t, TIME (ns)
70
30 50
20 t′s = ts – 1/8 tf
30
td @ VBE(off) = 0 V
20
10
7.0 10
5.0 2.0 V
7.0
3.0 5.0
–5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

P2N2907A
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0

6.0 IC = –1.0 mA, Rs = 430 Ω 6.0 IC = –50 µA
–500 µA, Rs = 560 Ω
–100 µA
–50 µA, Rs = 2.7 kΩ
–500 µA
4.0 –100 µA, Rs = 1.6 kΩ 4.0 –1.0 mA
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

30 400
300
20 Ceb
200
C, CAPACITANCE (pF)
10
100
7.0 80 VCE = –20 V
60 TJ = 25°C
5.0 Ccb
40
3.0 30
2.0 20
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
–1.0 +0.5
TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(on) @ VCE = –10 V –0.5

–0.6
–1.0
–0.4
–1.5
–0.2
–2.0 RqVB for VBE
0 –2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

MOTOROLA
NPN Silicon Planar PZT651T1

This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for SOT–223 PACKAGE
• High Current: 2.0 Amp NPN SILICON
• The SOT–223 package can be soldered using wave or reflow. TRANSISTOR
SURFACE MOUNT
• SOT–223 package ensures level mounting, resulting in improved thermal
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die. 4
• Available in 12 mm Tape and Reel COLLECTOR 2,4
Use PZT651T1 to order the 7 inch/1000 unit reel 1
2
Use PZT651T3 to order the 13 inch/4000 unit reel 3
BASE
• PNP Complement is PZT751T1 1
CASE 318E–04, STYLE 1
TO–261AA
EMITTER 3

DEVICE MARKING
651
Thermal Resistance from Junction–to–Ambient in Free Air RθJA 156 °C/W
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1

PZT651T1
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CBO 80 — Vdc
(IC = 100 µAdc, IE = 0)
(IE = 10 µAdc, IC = 0)
Base–Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 4.0 Vdc)
Collector–Base Cutoff Current ICBO — 100 nAdc
(VCB = 80 Vdc, IE = 0)
(IC = 50 mAdc, VCE = 2.0 Vdc) 75 —
(IC = 500 mAdc, VCE = 2.0 Vdc) 75 —
(IC = 1.0 Adc, VCE = 2.0 Vdc) 75 —
(IC = 2.0 Adc, VCE = 2.0 Vdc) 40 —
Collector–Emitter Saturation Voltages VCE(sat) Vdc
(IC = 2.0 Adc, IB = 200 mAdc) — 0.5
(IC = 1.0 Adc, IB = 100 mAdc) — 0.3
Base–Emitter Voltages VBE(on) — 1.0 Vdc
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Current–Gain — Bandwidth fT 75 — MHz
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%

MOTOROLA
PNP Silicon Planar PZT751T1

This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for SOT–223 PACKAGE
PNP SILICON
• High Current: 2.0 Amp TRANSISTOR
• The SOT–223 Package can be soldered using wave or reflow. SURFACE MOUNT
• SOT–223 package ensures level mounting, resulting in improved thermal
damage to the die 4
COLLECTOR 2, 4
Use PZT751T1 to order the 7 inch/1000 unit reel. 1
2
Use PZT751T3 to order the 13 inch/4000 unit reel. BASE 3
1
• NPN Complement is PZT651T1 CASE 318E-04, STYLE 1
TO-261AA
EMITTER 3

DEVICE MARKING
ZT751
Thermal Resistance from Junction–to–Ambient in Free Air RθJA 156 °C/W
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1

PZT751T1
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CBO 80 — Vdc
(IC = 100 µAdc, IE = 0)
(IE = 10 µAdc, IC = 0)
Base–Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 4.0 Vdc)
Collector–Base Cutoff Current ICBO — 100 nAdc
(VCB = 80 Vdc, IE = 0)
(IC = 50 mAdc, VCE = 2.0 Vdc) 75 —
(IC = 500 mAdc, VCE = 2.0 Vdc) 75 —
(IC = 1.0 Adc, VCE = 2.0 Vdc) 75 —
(IC = 2.0 Adc, VCE = 2.0 Vdc) 40 —
Collector–Emitter Saturation Voltages VCE(sat) Vdc
(IC = 2.0 Adc, IB = 200 mAdc) — 0.5
(IC = 1.0 Adc, IB = 100 mAdc) — 0.3
Base–Emitter Voltages VBE(on) — 1.0 Vdc
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Current–Gain–Bandwidth fT 75 — MHz
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.

MOTOROLA
NPN Silicon Planar PZT2222AT1

This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
SOT-223 PACKAGE
• PNP Complement is PZT2907AT1
NPN SILICON
• The SOT-223 package can be soldered using wave or reflow. TRANSISTOR
• SOT-223 package ensures level mounting, resulting in improved thermal SURFACE MOUNT
damage to the die. COLLECTOR
• Available in 12 mm tape and reel 2, 4 4
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel. BASE 1
1 2
3

EMITTER TO-261AA
MAXIMUM RATINGS
Total Power Dissipation up to TA = 25°C(1) PD 1.5 Watts
Storage Temperature Range° Tstg – 65 to +150 °C
Junction Temperature° TJ 150 °C
Thermal Resistance from Junction to Ambient RθJA 83.3 °C/W
DEVICE MARKING
P1F

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc
Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO °75° °—° Vdc
Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 6.0 — Vdc
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) IBEX — 20 nAdc
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) ICEX — 10 nAdc
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 100 nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2

PZT2222AT1
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS (continued)

Collector-Base Cutoff Current ICBO
(VCB = 60 Vdc, IE = 0) — 10 nAdc
ON CHARACTERISTICS
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 70 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = – 55°C) 35 —
(IC = 150 mAdc, VCE = 10 Vdc) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc) 50 —
(IC = 500 mAdc, VCE = 10 Vdc) 40 —
Collector-Emitter Saturation Voltages VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) — 0.3
(IC = 500 mAdc, IB = 50 mAdc) — 1.0
Base-Emitter Saturation Voltages VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) — 2.0
Input Impedance° °hie° kΩ
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre —
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) — 8.0x10-4
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) — 4.0x10-4
Small-Signal Current Gain ť hfe ť —
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 50 300
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 75 375
Output Admittance° °hoe° µmhos
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 5.0 35
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 25 200
Noise Figure (VCE = 10 Vdc, IC = 100 µAdc, f = 1.0 kHz) F — 4.0 dB
Output Capacitance Cc — 8.0 pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Ce — 25 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES (TA = 25°C)

Delay Time (VCC = 30 Vdc, IC = 150 mAdc, td — 10 ns
IB(on)
B( ) = 15 mAdc
mAdc, VEB(off)
EB( ff) = 0
0.5
5 Vdc)
Rise Time Figure 1 tr — 25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns

IB(on)
B( ) = IB( ff) = 15 mAdc)
B(off)
Fall Time Figure 2 tf — 60

PZT2222AT1
VCC
Vi
90% R2
Vo
R1
10% Vi D.U.T.
0
tr tp
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = – 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 Ω, R2 = 200 Ω.
PULSE GENERATOR: OSCILLOSCOPE:

PULSE DURATION tp ≤ 200 ns INPUT IMPEDANCE Zi > 100 kΩ
RISE TIME tr ≤ 2 ns INPUT CAPACITANCE Ci < 12 pF
DUTY FACTOR δ = 0.02 RISE TIME tr < 5 ns
Vi VCC
+16.2 V
R2
D.U.T.
R1
0 Vi R3
TIME
Vo
D1 OSCILLOSCOPE
– 13.8 V R4
tf 100 µs
VBB
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time

MOTOROLA
PNP Silicon PZT2907AT1

This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications. SOT-223 PACKAGE
PNP SILICON
• NPN Complement is PZT2222AT1
TRANSISTOR
• The SOT-223 package can be soldered using wave or reflow SURFACE MOUNT
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die. COLLECTOR
• Available in 12 mm tape and reel 2,4 4
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel. 1
BASE 1 2
3

EMITTER TO-261AA

Collector-Base Voltage VCBO – 60 Vdc
Collector Current IC – 600 mAdc
DEVICE MARKING
P2F

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CBO – 60 °—° — Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO – 60 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 °—° — Vdc
Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0) ICBO — °—° –10 nAdc
Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc) ICEX — — – 50 nAdc
Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc) IBEX — — – 50 nAdc
REV 4

PZT2907AT1
(IC = – 0.1 mAdc, VCE = –10 Vdc) 75 — —
(IC = –1.0 mAdc, VCE = –10 Vdc) 100 — —
(IC = –10 mAdc, VCE = –10 Vdc) 100 — —
(IC = –150 mAdc, VCE = –10 Vdc) 100 — 300
(IC = – 500 mAdc, VCE = –10 Vdc) 50 — —
Collector-Emitter Saturation Voltages VCE(sat) Vdc
(IC = –150 mAdc, IB = –15 mAdc) — — – 0.4
(IC = – 500 mAdc, IB = – 50 mAdc) — — –1.6
Base-Emitter Saturation Voltages VBE(sat) Vdc
(IC = –150 mAdc, IB = –15 mAdc) — — –1.3
(IC = – 500 mAdc, IB = – 50 mAdc) — — – 2.6
Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz) fT 200 — — MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cc — — 8.0 pF
Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz) Ce — — 30 pF
SWITCHING TIMES
Turn-On Time ton — — 45 ns
Delay Time Vd IC = –150
(VCC = – 30 Vdc, 150 mAdc,
Ad
td — — 10
IB1 = –15
15 mAdc)
Rise Time tr — — 40
Turn-Off Time toff — — 100 ns
(VCC = – 6.0
6 0 Vdc,
Vd IC = –150
150 mAdc,
Ad
Storage Time ts — — 80
IB1 = IB2 = –15
15 mAdc)
Fall Time tf — — 30
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
– 30 V +15 V – 6.0 V
INPUT INPUT
Zo = 50 Ω 200 Zo = 50 Ω 1.0 k 37
PRF = 150 Hz PRF = 150 Hz
1.0 k TO OSCILLOSCOPE 1.0 k TO OSCILLOSCOPE
0 RISE TIME ≤ 5.0 ns 0 RISE TIME ≤ 5.0 ns
– 16 V 50 – 30 V
50 1N916
200 ns 200 ns
Figure 1. Delay and Rise Figure 2. Storage and Fall

Time Test Circuit Time Test Circuit

PZT2907AT1
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1000 1000
TJ = 125°C
hFE, CURRENT GAIN
TJ = 25°C
100 100
TJ = – 55°C
VCE = – 20 V
TJ = 25°C
10 10
– 0.1 –1.0 –10 –100 –1000 –1.0 –10 –100 –1000
–1.0 30
TJ = 25°C
20
– 0.8 VBE(sat) @ IC/IB = 10
CAPACITANCE (pF) Ceb
VOLTAGE (VOLTS)
– 0.6 VBE(on) @ VCE = –10 V 10
7.0
– 0.4 Ccb
5.0
– 0.2
VCE(sat) @ IC/IB = 10 3.0
0 2.0
– 0.1 – 0.2 – 0.5 –1.0 – 2.0 – 5.0 –10 – 20 – 50 –100 – 200 – 500 – 0.1 – 0.2 – 0.3 – 0.5 – 0.7 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30
IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (VOLTS)
Figure 5. “ON” Voltage Figure 6. Capacitances

MOTOROLA
NPN SmallĆSignal PZTA14T1

This NPN small signal darlington transistor is designed for use in switching SOT–223 PACKAGE
applications, such as print hammer, relay, solenoid and lamp drivers. The MEDIUM POWER
device is housed in the SOT-223 package, which is designed for medium power NPN SILICON
surface mount applications. DARLINGTON
• High fT : 125 MHz Minimum TRANSISTOR

damage to the die. 4
COLLECTOR 2, 4
1
Use PZTA14T1 to order the 7 inch/1000 unit reel 2
BASE
Use PZTA14T3 to order the 13 inch/4000 unit reel 3
1
• The PNP Complement is PZTA64T1
EMITTER 3 TO-261AA

DEVICE MARKING
P1N
Junction-to-Ambient (surface mounted)
REV 1

PZTA14T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V(BR)CBO 30 — — Vdc
(IC = 100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CES 30 — — Vdc
(IC = 100 µAdc, IB = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 10 — — Vdc
(IE = 10 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — — 0.1 µAdc
(VCB = 30 Vdc, IE = 0)
Emitter-Base Cutoff Current IEBO — — 0.1 µAdc
(VEB = 10 Vdc, IC = 0)
(IC = 10 mAdc, VCE = 5.0 Vdc) 10,000 — —
(IC = 100 mAdc, VCE = 5.0 Vdc) 20,000 — —
Current-Gain — Bandwidth Product fT 125 — — MHz

PZTA14T1
200 k 4.0
VCE = 5.0 V
|h FE|, SMALL-SIGNAL CURRENT GAIN

TJ = 125°C
100 k f = 100 MHz
70 k 2.0 TJ = 25°C
50 k 25°C
30 k
1.0
20 k
0.8
10 k 0.6
7.0 k
0.4
5.0 k – 55°C VCE = 5.0 V
3.0 k
2.0 k 0.2
5.0 7.0 10 20 30 50 70 100 200 300 500 0.5 1.0 2.0 0.5 10 20 50 100 200 500
Figure 1. DC Current Gain Figure 2. High Frequency Current Gain
1.6 20
TJ = 25°C TJ = 25°C
1.4
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 10

C, CAPACITANCE (pF)
1.2
7.0 Cibo
1.0 5.0 Cobo
0.8 3.0
0.6 2.0
5.0 7.0 10 20 30 50 70 100 200 300 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Figure 3. “On” Voltages Figure 4. Capacitance

3.0 –1.0
RθV, TEMPERATURE COEFFICIENT (mV/°C)

TJ = 25°C 25°C to 125°C
*RθVC for VCE(sat)
2.5 – 2.0
IC = 10 mA 50 mA 250 mA 500 mA
– 55°C to 25°C
2.0 – 3.0
1.5 – 4.0 25°C to 125°C

θVB for VBE
1.0 – 5.0 – 55°C to 25°C
0.5 – 6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (µA) IC, COLLECTOR CURRENT (mA)

MOTOROLA
High Voltage Transistor PZTA42T1

Surface Mount Motorola Preferred Device
NPN Silicon COLLECTOR 2,4

SOT–223 PACKAGE
NPN SILICON
BASE
HIGH VOLTAGE
1
TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS
4
Collector-Emitter Voltage (Open Base) VCEO 300 Vdc 1
2
3
Collector-Base Voltage (Open Emitter) VCBO 300 Vdc
Collector Current (DC) IC 500 mAdc TO-261AA
DEVICE MARKING
P1D
Thermal Resistance, Junction-to-Ambient(1) RθJA 83.3 °C/W

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) V(BR)CEO 300 — Vdc
(IC = 1.0 mAdc, IB = 0)
(IC = 100 µAdc, IE = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 100 µAdc, IC = 0)
Collector-Base Cutoff Current ICBO — 0.1 µAdc
(VCB = 200 Vdc, IE = 0)
Emitter-Base Cutoff Current IEBO — 0.1 µAdc
(VBE = 6.0 Vdc, IC = 0)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 µs, δ = 0.02.
REV 2

PZTA42T1
ON CHARACTERISTICS
(IC = 1.0 mAdc, VCE = 10 Vdc) 25 —
(IC = 10 mAdc, VCE = 10 Vdc) 40 —
(IC = 30 mAdc, VCE = 10 Vdc) 40 —
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Base-Emitter Saturation Voltage VBE(sat) — 0.9 Vdc

MOTOROLA
PNP SmallĆSignal PZTA64T1

This PNP small-signal darlington transistor is designed for use in preamplifiers

input applications or wherever it is necessary to have a high input impedance. SOT-223 PACKAGE
The device is housed in the SOT-223 package which is designed for medium PNP SILICON
power surface mount applications. DARLINGTON
TRANSISTOR
• High fT : 125 MHz Minimum SURFACE MOUNT
• The SOT-223 Package can be soldered using wave or reflow.
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die. 4
COLLECTOR 2, 4
1
Use PZTA64T1 to order the 7 inch/1000 unit reel. 2
BASE 3
Use PZTA64T3 to order the 13 inch/4000 unit reel.
1
• NPN Complement is PZTA14T1
EMITTER 3 TO-261AA

DEVICE MARKING
P2V
Thermal Resistance from Junction to Ambient (surface mounted) RθJA 83.3 °C/W
REV 4

PZTA64T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CES 30 — Vdc
(IC = 100 µAdc, VBE = 0)
(IC = 100 µA, IE = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 10 — Vdc
(IE = 100 µA, IC = 0)
Emitter-Base Cutoff Current IEBO — 0.1 µAdc
(VBE = 10 Vdc, IC = 0)
Collector-Base Cutoff Current ICBO — 0.1 µAdc
(VCB = 30 Vdc, IE = 0)
(IC = 10 mAdc, VCE = 5.0 Vdc) 10,000 —
(IC = 100 mAdc, VCE = 5.0 Vdc) 20,000 —
Base-Emitter On-Voltage VBE(on) — 2.0 Vdc
(VCE = 5.0 Vdc, IC = 100 mAdc)

PZTA64T1
200
TA = 125°C
hFE, DC CURRENT GAIN (X1.0 K) 100
70
50
10 V
30 25°C
20 VCE = 2.0 V
5.0 V
10
7.0
5.0 – 55°C
3.0
2.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300
10 2.0
VCE = 5.0 V
f = 100 MHz TA = 25°C
4.0 TA = 25°C 1.6 VBE(sat) @ IC/IB = 100
3.0
V, VOLTAGE (VOLTS)
2.0
1.2
1.0 VBE(on) @ VCE = 5.0 V
0.8 VCE(sat) @ IC/IB = 1000
0.4 IC/IB = 100
0.4
0.2
0.1 0
1.0 2.0 5.0 10 20 50 100 200 500 1K 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300
Figure 2. High Frequency Current Gain Figure 3. “On” Voltage

2.0
TA = 25°C
1.8
1.6 IC = 10 mA 50 mA 100 mA 175 mA 300 mA
1.4
1.2
1.0
0.8
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K
IB, BASE CURRENT (µA)

MOTOROLA

PNP Silicon COLLECTOR 2,4 Motorola Preferred Device
BASE
1
SOT–223 PACKAGE
PNP SILICON
EMITTER 3 HIGH VOLTAGE TRANSISTOR
MAXIMUM RATINGS SURFACE MOUNT

Collector–Base Voltage VCBO –300 Vdc 4

1
Collector Current IC – 500 mAdc 2
3
TO–261AA
DEVICE MARKING
P2D
Thermal Resistance from Junction to Ambient(1) RθJA 83.3 °C/W

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO – 300 — Vdc
Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO – 300 — Vdc
Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V(BR)EBO – 5.0 — Vdc
Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0) ICBO — – 0.25 µAdc
Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0) IEBO — – 0.1 µAdc
ON CHARACTERISTICS
(IC = – 1.0 mAdc, VCE = – 10 Vdc) 25 —
(IC = –10 mAdc, VCE = – 10 Vdc) 40 —
(IC = – 30 mAdc, VCE = – 10 Vdc) 25 —
Saturation Voltages Vdc
(IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — – 0.5
(IC = –20 mAdc, IB = –2.0 mAdc) VBE(sat) — – 0.9
Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0) Ccb — 6.0 pF
(IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.0%.
REV 2

MOTOROLA

PNP Silicon COLLECTOR 2,4 Motorola Preferred Device
BASE
1
SOT–223 PACKAGE
PNP SILICON
EMITTER 3 HIGH VOLTAGE TRANSISTOR
MAXIMUM RATINGS SURFACE MOUNT

Collector–Base Voltage VCBO – 450 Vdc 4

1
Collector Current IC – 500 mAdc 2
3
Storage Temperature Range Tstg – 65 to +150 °C TO–261AA
DEVICE MARKING
ZTA96
Thermal Resistance from Junction to Ambient(1) RθJA 83.3 °C

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO – 450 — Vdc
(IC = –1.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CBO – 450 — Vdc
(IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO – 5.0 — Vdc
(IE = –10 µAdc, IC = 0)
Collector–Base Cutoff Current ICBO — – 0.1 µAdc
(VCB = – 400 Vdc, IE = 0)
Emitter–Base Cutoff Current IEBO — – 0.1 µAdc
(VBE = – 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
(IC = – 10 mAdc, VCE = – 10 Vdc)
Saturation Voltages Vdc
(IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — – 0.6
(IC = –20 mAdc, IB = –2.0 mAdc) VBE(sat) — – 1.0
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.0%.
REV 1

MOTOROLA
Advance Information MDC3105LT1

Integrated Relay/Solenoid Driver
• Optimized to Switch 3 V to 5 V Relays from a 5 V Rail

• Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
RELAY/SOLENOID DRIVER
300 mW at 3 V to 5 V
SILICON MONOLITHIC
• Features Low Input Drive Current CIRCUIT BLOCK
• Internal Zener Clamp Routes Induced Current to Ground Rather Than Back
to Supply
• Guaranteed Off State with No Input Connection
• Supports Large Systems with Minimal Off–State Leakage 3
• ESD Resistant in Accordance with the 2000 V Human Body Model

1
• Provides a Robust Driver Interface Between Relay Coil and Sensitive
2
Logic Circuits
Applications include: SOT–23 (TO–236AB)
• Telecom Line Cards and Telephony
• Industrial Controls
• Security Systems INTERNAL CIRCUIT DIAGRAM
• Appliances and White Goods Vout (3)

• Automated Test Equipment
• Automotive Controls Vin 1.0 k
6.8 V
(1)
This device is intended to replace an array of three to six discrete 33 k
components with an integrated SMT part. It is available in a SOT–23
package. It can be used to switch other 3 to 5 Vdc Inductive Loads such GND (2)
as solenoids and small DC motors.
MAXIMUM RATINGS
Power Supply Voltage VCC 6.0 Vdc
Recommended Operating Supply Voltage VCC 2.0–5.5 Vdc
Input Voltage Vin(fwd) 6.0 Vdc
Reverse Input Voltage Vin(rev) –0.5 Vdc
Output Sink Current  Continuous IO 300 mA
Operating Ambient Temperature Range TA –40 to +85 °C
Storage Temperature Range Tstg –65 to +150 °C
Total Device Dissipation(1) PD 225 mW
Derate above 25°C
1. FR–5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.

MDC3105LT1
OFF CHARACTERISTICS
Output Zener Breakdown Voltage V(BRout) 6.4 6.8 7.2 V
(@ IT = 10 mA Pulse) V(–BRout) — –0.7 —
Output Leakage Current @ 0 Input Voltage IOO µA

(Vout = 5.5 Vdc, Vin = O.C., TA = 25°C) — — 5.0
(Vout = 5.5 Vdc, Vin = O.C., TA = 85°C) — — 30
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc Iin mAdc
(IO = 250 mA, Vout = 0.4 Vdc, TA = –40°C) — 2.5 —
(correlated to a measurement @ 25°C)
Output Saturation Voltage Vdc
(IO = 250 mA, Vin = 4.0 Vdc, TA = –40°C) — 0.2 0.4
Output Sink Current  Continuous IC(on) mA
(TA = –40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) 250 — —
TYPICAL APPLICATION–DEPENDENT SWITCHING PERFORMANCE

Characteristic Symbol VCC Min Typ Max Units
Propagation Delay Times: ns
High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04) tPHL 5.5 — 55 —
Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04) tPLH 5.5 — 430 —
High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04) tPHL 5.5 — 85 —

Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04) tPLH 5.5 — 315 —
High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04) tPHL 5.5 — 55 —

Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04) tPLH 5.5 — 2385 —
Transition Times: ns
Fall Time; Figures 1, 2 (5.0 V 74HC04) tf 5.5 — 45 —
Rise Time; Figures 1, 2 (5.0 V 74HC04) tr 5.5 — 160 —
Fall Time; Figures 1, 3 (3.0 V 74HC04) tf 5.5 — 70 —

Rise Time; Figures 1, 3 (3.0 V 74HC04) tr 5.5 — 195 —
Fall Time; Figures 1, 4 (5.0 V 74LS04) tf 5.5 — 45 —

Rise Time; Figures 1, 4 (5.0 V 74LS04) tr 5.5 — 2400 —
Input Slew Rate(1) ∆V/∆t in 5.5 TBD — — V/ms
1. Minimum input slew rate must be followed to avoid overdissipating the device.
tf tr
VCC
90%
50%
Vin
10% GND
tPLH tPHL
VZ
90% VCC
Vout 50%
10% GND
tTHL tTLH
Figure 1. Switching Waveforms

MDC3105LT1
+4.5 ≤ VCC ≤ +5.5 Vdc
+ +
AROMAT
TX2–L2–3 V
Vout (3) Vout (3)

MDC3105LT1 MDC3105LT1
Vin (1) 1k 1k Vin (1)

74HC04 OR 74HC04 OR
6.8 V 6.8 V
EQUIVALENT EQUIVALENT
33 k 33 k
GND (2) GND (2)
Figure 2. A 3.0–V, 200–mW Dual Coil Latching Relay Application

with 5.0 V–HCMOS Interface
+3.0 ≤ VDD ≤ +3.75 Vdc
+4.5 ≤ VCC ≤ +5.5 Vdc
+ +
AROMAT
TX2–L2–3 V
Vout (3) Vout (3)

Vin (1) 1k 1k Vin (1)

74HC04 OR 74HC04 OR
6.8 V 6.8 V
EQUIVALENT EQUIVALENT
33 k 33 k
GND (2) GND (2)

with 3.0 V–HCMOS Interface

MDC3105LT1
+4.5 ≤ VCC ≤ +5.5 Vdc
+ +
AROMAT
TX2–L2–3 V
Vout (3) Vout (3)

BAL99LT1 1k 1k BAL99LT1
74LS04 74LS04
6.8 V 6.8 V
33 k 33 k
Vin (1) Vin (1)
GND (2) GND (2)

with TTL Interface
+4.5 TO +5.5 Vdc
+ +
AROMAT AROMAT
R1 R2
TX2–5 V TX2–5 V
– –
Max Continuous Current Calculation
R1 = R2 = 178 Ω Nominal @ TA = 25°C

Vout (3) Assuming ±10% Make Tolerance,
R1 = R2 = (178 Ω) (0.9) = 160 Ω Min @ TA = 25°C
TC for Annealed Copper Wire is 0.4%/°C
Vin (1) N R1 = R2 = (160 Ω) [1+(0.004) (–40°–25°)] = 118 Ω

74HC04 OR Min @ –40°C
EQUIVALENT
R1 in Parallel with R2 = 59 Ω Min @ –40°C
Io + 5.5 V59Max – 0.4 V + 86 mA Max

W Min
86 mA ≤ 300 mA Max Io spec.
GND (2)
Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application

MDC3105LT1
TYPICAL OPERATING WAVEFORMS
(Circuit of Figure 5)
4.5 225
3.5 175
V in (VOLTS)
IC (mA)
2.5 125
1.5 75
500M 25
10 30 50 70 90 10 30 50 70 90
TIME (ms) TIME (ms)
Figure 6. 20 Hz Square Wave Input Figure 7. 20 Hz Square Wave Response
9 172
7 132
Vout (VOLTS)
IZ (mA)
5 92
3 52
1 12
10 30 50 70 90 10 30 50 70 90
TIME (ms) TIME (ms)
Figure 8. 20 Hz Square Wave Response Figure 9. 20 Hz Square Wave Response
600 1
TJ = 125°C TJ = 25°C
Vo = 1.0 V
500 Vo = 0.25 V
0.8
OUTPUT VOLTAGE (V)
TJ = 85°C
400
0.6 175 250
TJ = 25°C
hFE
300 1 10 50 125 IC = 350 mA

0.4
200 TJ = – 40°C
0.2
100
0 0
1 10 100 1000 1E–5 1E–4 1E–3 1E–2
Io, OUTPUT SINK CURRENT (mA) INPUT CURRENT
Figure 10. Pulsed Current Gain Figure 11. Collector Saturation Region

MOTOROLA
Low Voltage Bias Stabilizer MDC5001T1

with Enable
• Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field
Effect Transistors
SILICON
• Provides Stable Bias Using a Single Component Without Use of Emitter Ballast SMALLBLOCK
and Bypass Components INTEGRATED CIRCUIT
• Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc
• Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric
Changes
• Consumes t 0.5 mW at VCC = 2.75 V 6
5
• Active High Enable is CMOS Compatible 4
1
This device provides a reference voltage and acts as a DC feedback element 2
3
around an external discrete, NPN BJT or N–Channel FET. It allows the external
transistor to have its emitter/source directly grounded and still operate with a stable CASE 419B–01, Style 19
collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF SOT–363
stages operating from a low voltage regulated supply, but can also be used to stabilize
the bias current of any linear stage in order to eliminate emitter/source bypassing and
achieve tighter bias regulation over temperature and unit variations. The “ENABLE”
polarity nulls internal current, Enable current, and RF transistor current in “STANDBY.” INTERNAL CIRCUIT DIAGRAM
This device is intended to replace a circuit of three to six discrete components.
The combination of low supply voltage, low quiescent current drain, and small VCC (4)
package make the MDC5001T1 ideal for portable communications applications such
as:
R1
• Cellular Telephones
Q1
• Pagers
R2
• PCN/PCS Portables
• GPS Receivers
R3 Vref (6)
• PCMCIA RF Modems
• Cordless Phones Q2 Iout (1)
VENBL
• Broadband and Multiband Transceivers and Other Portable Wireless Products R4
(5) R5
MAXIMUM RATINGS Q4
Power Supply Voltage VCC 15 Vdc R6
Ambient Operating Temperature Range TA –40 to +85 °C

Storage Temperature Range Tstg –65 to +150 °C
GND (2) and (3)
Collector Emitter Voltage (Q2) VCEO –15 V
Enable Voltage (Pin 5) VENBL VCC V
Total Device Power Dissipation PD mW
(FR–5 PCB of 1″ × 0.75″ × 0.062″, TA = 25°C) 150
REV 1

MDC5001T1
Recommended Operating Supply Voltage VCC 1.8 2.75 10 Volts
Power Supply Current (VCC = 2.75 V) ICC — 130 200 µA
Vref, Iout are unterminated
See Figure 8
Q2 Collector Emitter Breakdown Voltage V(BR)CEO2 15 Volts
(IC2 = 10 µA, IB2 = 0)
Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V) Vref Volts
(Iout = 30 µA) 2.050 2.075 2.100
(Iout = 150 µA) 2.110 2.135 2.160
See Figure 1
Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V, DVref
–40°C ≤ TA ≤ +85°C)
VCC Pulse Width = 10 mS, Duty Cycle = 1%
(Iout = 10 µA) ±5.0 ±10
(Iout = 30 µA) ±15 ±30 mV
(Iout = 100 µA) ±25 ±50
See Figures 2 and 11
The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy.
However, no responsibility for their accuracy is assumed by Motorola.
.MODEL Q4 NPN .MODEL Q1, Q2 PNP RESISTOR VALUES
BF = 136 NE = 1.6 BF = 87 NK = 0.5 R1 = 12 K

BR = 0.2 NF = 1.005 BR = 0.6 NR = 1.0 R2 = 6 K
CJC = 318.6 f RB = 140 CJC = 800E–15 RB = 720 R3 = 3.4 K
CJE = 569.2 f RBM = 70 CJE = 46E–15 RBM = 470 R4 = 12 K
CJS = 1.9 p RC = 180 EG = 1.215 RC = 180 R5 = 20 K
EG = 1.215 RE = 1.6 FC = 0.5 RE = 26 R6 = 40 K
FC = 0.5 TF = 553.6 p IKF = 3.8E–04 TF = 15E–9
IKF = 24.41 m TR = 10 n IKR = 2.0 TR = 50E–09
IKR = 0.25 VAF = 267.6 IRB = 0.9E–3 VAF = 54.93
IRB = 0.0004 VAR = 12 IS = 1.027E–15 VAR = 20
IS = 256E–18 VJC = 0.4172 ISC = 10E–18 VAR = 20
ISC = 1 f VJE = 0.7245 ISE = 1.8E–15 VJC = 0.4172
ISE = 500E–18 VJS = 0.39 ITF = 2E–3 VJE = 0.4172
ITF = 0.9018 VTF = 10 MJC = 0.2161 VTF = 10
MJC = 0.2161 XTB = 1.5 MJE = 0.2161 XTB = 1.5
MJE = 0.3373 XTF = 2.077 NC = 0.8 XTF = 2.0 These models can be retrieved
MJS = 0.13 XTI = 3 NE = 1.38 XTI = 3 electronically by accessing the
NC = 1.09 NF = 1.015 Motorola Web page at
http://design–net.sps.mot.com/models
and searching the section on
SMALLBLOCK models

MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS
10
= 1000 m A
= 500 m A
= 100 m A
= 10 mA
9
Iout
Iout
Iout
Iout
8
7
6
V CC , SUPPLY VOLTAGE (Vdc)

5
4
3
V ENBL = VCC
TJ = 25°C
2
1
0
8
Vref (Vdc)
Figure 1. Vref versus VCC @ Iout

MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS
(Refer to Circuits of Figures 10 through 15)
50 900
40 VCC = 2.75 Vdc Iout = 500 mA
800 VENBL = VCC
VENBL = VCC TJ = –40°C
Iout = 100 mA
ICC , SUPPLY CURRENT ( m Adc)

30
700
20 Iout = 30 mA
600 TJ = 25°C
10
∆V ref (mV)
500
0 Iout = 10 mA
400 TJ = 85°C
–10
300
–20
–30 200
–40 100
–50 0
–45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 0 1 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (Vdc)
Figure 2. DVref versus TJ @ Iout Figure 3. ICC versus VCC @ TJ
1000 160
TJ = –40°C
TJ = –40°C VCC = 2.75 Vdc
140
500 TJ = 25°C Iref = 30 mA
TJ = 25°C
H FE , Q2 DC CURRENT GAIN
TJ = 85°C 120
300
IENABLE (m Adc)
200 100
TJ = 85°C
100 80
50 60
30 40
20 VCE2 = Vout – Vref = –1.5 Vdc
20
10 0
10 20 30 50 100 200 300 500 1000 0 0.5 1.0 1.5 2.0 2.5 3.0
Iout, DC OUTPUT CURRENT (mAdc) VENABLE (Vdc)
Figure 4. Q2 Current Gain versus Figure 5. Ienable versus Venable

Output Current @ TJ
6.0
VCC = 5.0 Vdc Iout = 500 mA
5.0 Iout = 30 mA
4.0
3.3 Vdc
Vref , (Vdc)
3.0 2.75 Vdc
2.0 1.8 Vdc

TJ = 25°C
1.0
MIN VENBL FOR STABLE Vref @ VCC
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Venable (Vdc)
Figure 6. Vref versus Venable @ VCC and Iout

MDC5001T1
TYPICAL CLOSED LOOP PERFORMANCE
(Refer to Circuits of Figures 16 & 17)
1.5 4.0
VCC = 2.75 Vdc
1.0 IC3 = 15 mA VENBL = VCC 3.0 IC3 = 15 mA
IC3 = 10 mA
0.5 2.0 IC3 = 3 mA
IC3 = 10 mA IC3 = 1 mA
∆V ref (%)
0 IC3 = 3 mA 1.0
D IC 3 (%)
–0.5 0
–1.0 –1.0
IC3 = 1 mA VCC = 2.75 Vdc
–1.5 –2.0 VENBL = VCC
TA = 25°C
–2.0 –3.0
–45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 0 50 100 150 200 250 300
TA, AMBIENT TEMPERATURE (°C) EXTERNAL TRANSISTOR DC BETA @ IC3
Figure 7. DIC3 versus TA @ IC3 Figure 8. DVref versus External Transistor

DC Beta @ IC3
10
VCC = 2.75 Vdc
VENBL = VCC
5.0 TA = 25°C
0
D I C 3 (%)
–5.0
IC3 = 15 mA
IC3 = 10 mA
–10 IC3 = 3 mA
IC3 = 1 mA
–15
0 50 100 150 200 250 300
HFE, EXTERNAL TRANSISTOR DC BETA
Figure 9. DIC3 versus External Transistor

DC Beta @ IC3

MDC5001T1
OPEN LOOP TEST CIRCUITS
ICC VCC (4)

ICC VCC (4)
Q1
Q1
ENABLE Vref (6)

ENABLE (5)
Vref (6) Q2 Iout (1)
(5)
Q2
Iout (1) MDC5001 Iout
Iref
MDC5001 + Q4
+ Q4 V Vref
Iout
A
VCC +
VCC GND (2) & (3) VBE3 = 0.7 V
GND (2) & (3)
See NOTE 1
Figure 10. ICC versus VCC Test Circuit Figure 11. Vref versus VCC Test Circuit
VCC (4) VCC (4)
Q1 Q1
IB
ENABLE Vref (6) ENABLE Vref (6)

(5) (5)
Q2 Iout (1) Q2 Iout (1)
Iout Iref
MDC5001 MDC5001 Iout
+ Q4 Q4
VCC = V Vref A Iout
Iout
2.75 V
A
+
GND (2) & (3) VBE3 = 0.7 V GND (2) & (3)
1.5 V +
See NOTE 1
Figure 12. Vref versus TJ Test Circuit Figure 13. HFE versus Iout Test Circuit
VCC (4) VCC (4)
+
+
VCC = Q1 Q1
2.75 V VCC
ENABLE Vref (6) ENABLE Vref (6)

(5) (5)
Q2 Iout (1) Q2 Iout (1)
IENBL A Iout Iref = 30 mA MDC5001 Iout Iref

MDC5001 +
Q4 Q4 Vref +
+
V
VENBL Iout A
+ +
VENBL VBE3 = 0.7 V VBE3 = 0.7 V
GND (2) & (3) GND (2) & (3)
See NOTE 1
Figure 14. IENBL versus VENBL Test Circuit Figure 15. Vref versus VENBL Test Circuit
NOTE 1: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref.

MDC5001T1
CLOSED LOOP TEST CIRCUITS
VCC (4)
IC3
Q1
Vref (6)
ENABLE (5)
Q2 Iout (1) VBE3
A Q3
MDC5001 Iout
+ Q4 V Vref
VCC =
2.75 V
GND (2) & (3)
Figure 16. Vref and RF Stage IC3 versus HFE3 Test Circuit
VCC (4)
IC3
Q1
Vref (6)
ENABLE (5)
Q2 Iout (1) 1K VBE3 Q3
MRF941
HFE = 113
MDC5001 51
+ Q4
51
VCC =
2.75 V 0.1 mF 100 pF 100 pF
0.018 mF 0.018 mF
GND (2) & (3)
NOTE: External R–Cs used to Maintain Broadband Stability of MRF941
Figure 17. RF Stage IC3 versus TA Test Circuit

MDC5001T1
APPLICATION CIRCUITS
VCC (4) REGULATED VCC = 2.75 Vdc
IC3 = 3 mAdc
Q1
R5
Vref (6) Vref = 2.025 Vdc 240 W
ENABLE
(5)
Q2 Iout (1)
VENBL 470 pF
30 nH
180
MDC5001 18 nH
+ 1K RF OUT
Q4 Q3
MRF9411
Iout
8.0 nH Typ
VCC = 2.75 V 470 pF
RF IN
GND (2) & (3) 9 pF
5–STEP DESIGN PROCEDURE

Step 1: Choose VCC (1.8 V Min to 10 V Max)
Step 2: Insure that Min VENBL is ≥ minimum indicated in Figures 5 and 6.
Step 3: Choose bias current, IC3, and calculate needed Iout from typ HFE3
Step 4: From Figure 1, read Vref for VCC and Iout calculated.
Step 5: Calculate Nominal R5 = (VCC – Vref)
(IC3 + Iout). Tweak as desired.
Figure 18. Class A Biasing of a Typical 900 MHz

BJT Amplifier Application
VCC (4) REGULATED VCC = 2.75 Vdc ID = 15 mAdc
R5
43 W
Q1
RFC
Vref (6) Vref = 2.085 Vdc
ENABLE
(5)
Q2 Iout (1)
VENBL 1000 pF
6.8 nH
MDC5001 2.7 pF
+
Q4 1K RF OUT
Q3
R6 MRF9811
VCC = Iout 12.5 nH
22 K Typ
2.75 V 1000 pF
RF IN EGS
GND (2) & (3) 6.1 pF + 5 Vdc
7–STEP DESIGN PROCEDURE

Step 1: Choose VCC (1.8 V Min to 10 V Max)
Step 2: Insure that Min VENBL is ≥ minimum indicated in Figures 5 and 6.
Step 3: Choose bias current, ID, and determine needed gate–source voltage, VGS.
Step 4: Choose Iout keeping in mind that too large an Iout can impair MDC5000 DVref/DTJ
performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET.
Step 5: Calculate R6 = (VGS + EGS)
Iout
Step 6: From Figure 1, read Vref for VCC & Iout chosen
Step 7: Calculate Nominal R5 = (VCC – Vref)
(ID + Iout). Tweak as desired.
Figure 19. Class A Biasing of a Typical 890 MHz

Depletion Mode GaAs FET Amplifier

Section 3
GreenLine Portfolio
In Brief . . .
New in this revision is Motorola’s GreenLine portfolio of
devices. These devices feature energy–conserving traits
superior to those of our existing line of standard parts for the 3
3
same usage. GreenLine devices can actually help reduce
the power demands of your products. In an increasingly 1
2
power–hungry world, Motorola’s GreenLine portfolio 2 1
makes powerful sense. So much sense that we plan to CASE 318-08 CASE 318D-04
continue adding devices to the portfolio. Chances are, there (TO-236AB) SC–59
are Motorola GreenLine devices applicable to one or more SOT-23
of your products – ones that can help save energy, dollars –
and the environment. 6
5
4 4
Currently, our portfolio consists of three families:
• Low–Leakage Switching Diodes: Reverse leakage 1
2
1
2
3 3
specifications guaranteed to 500 pA. They help extend bat-
tery life and are ideal for small battery powered systems in CASE 318E-04 CASE 318G-02
which standby power is essential. Applications include ESD (TO-261AA) TSOP–6
protection, reverse voltage protection, and steering logic. SOT-223
• Bipolar Output Driver Transistors: Ultra–low collector
saturation voltage. They deliver more energy to the intended 3 2
load with less power wasted through dissipation loss. Espe-
cially effective in lower voltage battery powered applications 1
1
and prolong battery life in portable and hand–held commu- 2
nications and personal digital equipment. Applications in- CASE 419-02 CASE 425-04
clude low voltage display light drivers and general output SC–70/SOT–323 SOD–123
drivers.
• Small Signal HDTMOS: Lowest ever drain–source re-
sistance versus package size. Lower rDS(on) means less
wasted energy through dissipation loss. Especially effective
for low–current applications where energy conservation is
crucial. These small MOSFETs are ideal for space–sensitive
power management circuitry. Applications include low cur-
rent switchmode power supplies, uninterruptable power sup-
plies (UPS), power management systems, and bias
switching.
This chapter exclusively highlights the GreenLine devices,
which are also listed in their respective Transistor, Diode and
MOSFET chapters.

MOTOROLA

BSS84LT1
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors P–CHANNEL
ENHANCEMENT–MODE
Part of the Greenline Portfolio of devices with energy–conserv-  TMOS MOSFET
ing traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Reduced power loss conserves 3 DRAIN
energy, making this device ideal for use in small power manage- 3
ment circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered 1
products such as computers, printers, cellular and cordless
2
telephones. 1
CASE 318–08, Style 21
GATE
• Energy Efficient SOT–23 (TO–236AB)
• Miniature SOT–23 Surface Mount Package Saves Board Space
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Drain–to–Source Voltage VDSS 50 Vdc
Gate–to–Source Voltage — Continuous VGS ± 20 Vdc
Drain Current — Continuous @ TA = 25°C ID 130 mA
Drain Current — Pulsed Drain Current (tp ≤ 10 µs) IDM 520

Thermal Resistance — Junction–to–Ambient RθJA 556 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C
DEVICE MARKING
BSS84LT1 = PD
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
BSS84LT1 7″ 8mm embossed tape 3000
BSS84LT3 13″ 8mm embossed tape 10,000
REV 1

BSS84LT1
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage V(BR)DSS 50 — — Vdc
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current IDSS µAdc
(VDS = 25 Vdc, VGS = 0 Vdc) — — 0.1
(VDS = 50 Vdc, VGS = 0 Vdc) — — 15
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 60
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — ±60 µAdc
Gate–Source Threaded Voltage VGS(th) 0.8 — 2.0 Vdc
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance rDS(on) — 5.0 10 Ohms
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance |yfs| 50 — — mS
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
Input Capacitance (VDS = 5.0 Vdc) Ciss — 30 — pF
Output Capacitance (VDS = 5.0 Vdc) Coss — 10 —
Transfer Capacitance (VDG = 5.0 Vdc) Crss — 5.0 —
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time td(on) — 2.5 — ns
Rise Time ((VDD = –15 Vdc, ID = –2.5 Adc, tr — 1.0 —
Turn–Off Delay Time RL = 50 Ω) td(off) — 16 —
Fall Time tf — 8.0 —
Gate Charge QT — 6000 — pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current IS — — 0.130 A
Pulsed Current ISM — — 0.520
Forward Voltage(2) VSD — 2.5 — V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
0.6 0.5
VDS = 10 V 25°C TJ = 25°C VGS = 3.5 V
0.45
0.5
I D , DRAIN CURRENT (AMPS)
0.4 3.25 V
– 55°C
150°C
0.35
0.4
0.3 3.0 V
0.3 0.25
0.2 2.75 V
0.2
0.15
2.5 V
0.1
0.1
0.05 2.25 V
0 0
1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics

BSS84LT1
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)

9 7
VGS = 4.5 V 150°C
6.5 VGS = 10 V
8 150°C
6
7 5.5
6 5
4.5
5 25°C
4 25°C
4 3.5
–55°C 3
3 –55°C
2.5
2 2
0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current
2 8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

RDS(on) , DRAIN–TO–SOURCE RESISTANCE
VDS = 40 V
1.8 VGS = 10 V 7 TJ = 25°C
ID = 0.52 A
1.6 6
(NORMALIZED)
5
1.4
VGS = 4.5 V
4
1.2 ID = 0.13 A
3 ID = 0.5 A
1
2
0.8
1
0.6 0
– 55 –5 45 95 145 0 500 1000 1500 2000
TJ, JUNCTION TEMPERATURE (°C) QT, TOTAL GATE CHARGE (pC)
Figure 5. On–Resistance Variation with Temperature Figure 6. Gate Charge
1
I D , DIODE CURRENT (AMPS)
TJ = 150°C 25°C –55°C

0.1
0.01
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage

MOTOROLA

BSS138LT1
N-Channel Enhancement Mode

Logic Level SOT-23 MOSFET N–CHANNEL
LOGIC LEVEL
Typical applications are dc–dc converters, power management in TMOS FET
portable and battery–powered products such as computers, TRANSISTOR
printers, PCMCIA cards, cellular and cordless telephones.
• Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for
low voltage applications 
3
• Miniature SOT–23 Surface Mount Package saves board space
3 DRAIN
1
2
CASE 318–08, Style 21
SOT–23 (TO–236A)
1
GATE
2 SOURCE


DEVICE MARKING
BSS138LT1 = J1
BSS138LT1 7″ 8mm embossed tape 3000
BSS138LT3 13″ 8mm embossed tape 10,000
REV 1

BSS138LT1
OFF CHARACTERISTICS
(VDS = 25 Vdc, VGS = 0 Vdc) — — 0.1
(VDS = 50 Vdc, VGS = 0 Vdc) — — 0.5
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — ±0.1 µAdc
Gate–Source Threshold Voltage VGS(th) 0.5 — 1.5 Vdc
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance rDS(on) Ohms
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) — 5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc) — — 3.5
Forward Transconductance gfs 100 — — mmhos
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss — 40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss — 12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss — 3.5 5.0
Turn–On Delay Time td(on) — — 20 ns
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
Turn–Off Delay Time td(off) — — 20

BSS138LT1
0.8 0.9
TJ = 25°C VGS = 3.5 V VDS = 10 V 25°C
0.7 0.8
– 55°C

VGS = 3.25 V
0.6 0.7
150°C
VGS = 3.0 V 0.6
0.5
VGS = 2.75 V 0.5
0.4
0.4
0.3 VGS = 2.5 V
0.3
0.2 0.2
0.1 0.1
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
2.2 1.25
ID = 1.0 mA
2
VGS = 10 V
Vgs(th) , VARIANCE (VOLTS)

1.8 ID = 0.8 A 1.125
(NORMALIZED)
1.6
VGS = 4.5 V
1.4 ID = 0.5 A 1
1.2
1 0.875
0.8
0.6 0.75
– 55 –5 45 95 145 – 55 –30 –5 20 45 70 95 120 145
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with Figure 4. Threshold Voltage Variation

Temperature with Temperature
10
VDS = 40 V
TJ = 25°C
8
4
ID = 200 mA
2
0
0 500 1000 1500 2000 2500 3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge

BSS138LT1

10 8
VGS = 2.5 V VGS = 2.75 V
9
7
150°C
8
150°C 6
7
6 5
5 4
25°C
4 25°C
3
3 –55°C
2 2 –55°C
1 1
0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25

6 4.5
VGS = 4.5 V VGS = 10 V
5.5
150°C 4 150°C
5
4.5 3.5
4
3
3.5
3 25°C 2.5 25°C
2.5 2
2 –55°C
1.5 –55°C
1.5
1 1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
1 120
100
TJ = 150°C 25°C –55°C

0.1 80
60
Ciss
0.01 40
Coss
20
Crss
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage Figure 11. Capacitance

MOTOROLA

MGSF1N02LT1

TMOS Single N-Channel N–CHANNEL
ENHANCEMENT–MODE
Field Effect Transistors TMOS MOSFET
Part of the GreenLine Portfolio of devices with energy–
conserving traits. 
These miniature surface mount MOSFETs utilize Motorola’s
3
High Cell Density, HDTMOS process. Low rDS(on) assures 3 DRAIN
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry. 1
Typical applications are dc–dc converters and power manage- 2
ment in portable and battery–powered products such as CASE 318–08, Style 21
computers, printers, PCMCIA cards, cellular and cordless SOT–23 (TO–236AB)
1
telephones. GATE
• Low rDS(on) Provides Higher Efficiency and Extends Battery
Life 2 SOURCE
• Miniature SOT–23 Surface Mount Package Saves Board
Space


Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C
Device Marking: NZ
MGSF1N02LT1 7″ 8mm embossed tape 3000
MGSF1N02LT3 13″ 8mm embossed tape 10,000
REV 2

MGSF1N02LT1
OFF CHARACTERISTICS
(VDS = 20 Vdc, VGS = 0 Vdc) — — 1.0
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — ±100 nAdc
Gate Threshold Voltage VGS(th) 1.0 1.7 2.4 Vdc
(VDS = VGS, ID = 250 µAdc)
(VGS = 10 Vdc, ID = 1.2 Adc) — 0.075 0.090
(VGS = 4.5 Vdc, ID = 1.0 Adc) — 0.115 0.130
Transfer Capacitance (VDG = 5.0 Vdc) Crss — 45 —
Rise Time ((VDD = 15 Vdc, ID = 1.0 Adc, tr — 1.0 —
Gate Charge (See Figure 6) QT — 6000 — pC
2.5 3
VDS = 10 V
4V
2.5 3.25 V
2 3.5 V
2
1.5 – 55°C VGS = 3.0 V
1.5
1 TJ = 150°C
1 2.75 V
0.5 0.5 2.5 V

25°C
2.25 V
0 0
1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 7 8 9 10

MGSF1N02LT1

0.2 0.14
150°C
0.13
0.18 150°C
0.12
0.16 VGS = 4.5 V VGS = 10 V
0.11
0.14
25°C 0.1
0.12 0.09 25°C
0.1 –55°C 0.08
0.07
0.08 –55°C
0.06
0.06 0.05
0.04 0.04
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
1.6

10
VDS = 16 V
1.5
VGS = 10 V TJ = 25°C
1.4 ID = 2 A 8
1.3
(NORMALIZED)
1.2 VGS = 4.5 V

6
ID = 1 A
1.1
1 4
0.9
ID = 2.0 A
0.8 2
0.7
0.6 0
– 55 –5 45 95 145 0 1000 2000 3000 4000 5000 6000
1 1000
VGS = 0 V
f = 1 MHz
TJ = 25°C
TJ = 150°C 25°C –55°C
C, CAPACITANCE (pF)
0.1
Ciss
100
Coss
0.01
Crss
0.001 10
0 0.2 0.4 0.6 0.8 1 0 5 10 15 20
VSD, DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)

MOTOROLA

MGSF1N03LT1

TMOS Single N-Channel N–CHANNEL
ENHANCEMENT–MODE
3
High Cell Density, HDTMOS process. Low rDS(on) assures 3 DRAIN
1
telephones.
GATE
Life
2 SOURCE
• Miniature SOT–23 Surface Mount Package Saves Board
Space


Device Marking: N3
MGSF1N03LT1 7″ 8mm embossed tape 3000
MGSF1N03LT3 13″ 8mm embossed tape 10,000
REV 4

MGSF1N03LT1
OFF CHARACTERISTICS
(VDS = 30 Vdc, VGS = 0 Vdc) — — 1.0
(VGS = 10 Vdc, ID = 1.2 Adc) — 0.08 0.10
(VGS = 4.5 Vdc, ID = 1.0 Adc) — 0.125 0.145
2.5 2.5
VDS = 10 V VGS = 3.75 V
3.5 V
2 2
1.5 1.5
3.25 V
1 – 55°C 1
3.0 V
TJ = 150°C
0.5 0.5 2.75 V
25°C
2.5 V
0 0
1 1.5 2 2.5 3 3.5 0 2 4 6 8 10

MGSF1N03LT1
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS
R DS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS

0.24 0.16
150°C
150°C
0.14
0.19 VGS = 4.5 V VGS = 10 V
0.12
25°C
0.14 0.1 25°C
–55°C 0.08
0.09 –55°C
0.06
0.04 0.04
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
1.8

10
VDS = 24 V
1.6 VGS = 10 V TJ = 25°C
1.4 ID = 2 A 8
1.2
(NORMALIZED)
VGS = 4.5 V
ID = 1 A 6
1
0.8
4
0.6
ID = 2.0 A
0.4
2
0.2
0 0
– 55 – 25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000
1 350
VGS = 0 V
300 f = 1 MHz
TJ = 25°C
TJ = 150°C 25°C –55°C
C, CAPACITANCE (pF)
250
0.1
200
150
Ciss
0.01
100
Coss
50
Crss
0.001 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 4 8 12 16 20

MOTOROLA

MGSF1P02ELT1
Preliminary Information Motorola Preferred Device

TMOS Single P-Channel P–CHANNEL
Field Effect Transistors ENHANCEMENT–MODE
TMOS MOSFET
conserving traits.

High Cell Density, HDTMOS process. Low rDS(on) assures 3
minimal power loss and conserves energy, making this device 3 DRAIN
telephones. 1
GATE
Life
• Miniature SOT–23 Surface Mount Package Saves Board Space 2 SOURCE

Gate–to–Source Voltage — Continuous VGS ± 8.0 Vdc

Device Marking: PC
MGSF1P02ELT1 7″ 8mm embossed tape 3000
MGSF1P02ELT3 13″ 8mm embossed tape 10,000

MGSF1P02ELT1
OFF CHARACTERISTICS
(VDS = 16 Vdc, VGS = 0 Vdc) — — 1.0
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS — — ±100 nAdc
(VGS = 4.5 Vdc, ID = 0.75 Adc) — 0.20 0.26
(VGS = 2.5 Vdc, ID = 0.5 Adc) — 0.32 0.50

MOTOROLA

MGSF1P02LT1

TMOS Single P-Channel P–CHANNEL
ENHANCEMENT–MODE
3
High Cell Density, HDTMOS process. Low rDS(on) assures
3 DRAIN
1
telephones. GATE
Life
2 SOURCE
• Miniature SOT–23 Surface Mount Package Saves Board Space


Device Marking: PC
MGSF1P02LT1 7″ 8mm embossed tape 3000
MGSF1P02LT3 13″ 8mm embossed tape 10,000
REV 2

MGSF1P02LT1
OFF CHARACTERISTICS
(VDS = 20 Vdc, VGS = 0 Vdc) — — 1.0
(VGS = 10 Vdc, ID = 1.5 Adc) — 0.235 0.350
(VGS = 4.5 Vdc, ID = 0.75 Adc) — 0.375 0.500
1.5 1.5
VDS = 10 V VGS = 3.5 V
3.25 V
1.25 1.25
1 1
3.0 V
0.75 0.75
TJ = 150°C
– 55°C 2.75 V
0.5 0.5
25°C 2.5 V
0.25 0.25
2.25 V
0 0
1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 7 8 9 10

MGSF1P02LT1

0.55 0.4
0.38
150°C 0.36
0.5 VGS = 4.5 V VGS = 10 V
0.34
150°C
0.32
0.45 0.3
0.28
25°C 25°C
0.26
0.4
0.24
–55°C
–55°C
0.22
0.35 0.2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
1.25

10
VGS = 10 V VDS = 16 V
1.2
ID = 1.5 A TJ = 25°C
1.15 8
1.1
(NORMALIZED)
VGS = 4.5 V 6
1.05 ID = .75 A
1
4
0.95
ID = 1.5 A
0.9
2
0.85
0.8 0
– 55 –5 45 95 145 0 1000 2000 3000 4000 5000 6000
1 1000
VGS = 0 V
f = 1 MHz
TJ = 25°C
TJ = 150°C 25°C –55°C
C, CAPACITANCE (pF)
0.1
Ciss
100
Coss
0.01
Crss
0.001 10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 4 6 8 10

MOTOROLA

MGSF3441VT1

P–CHANNEL
TMOS Single P-Channel ENHANCEMENT–MODE
rDS(on) = 78 mΩ (TYP)
These miniature surface mount MOSFETs utilize Motorola’s D

D
1 2 5 6 S
High Cell Density, HDTMOS process. Low rDS(on) assures DRAIN
minimal power loss and conserves energy, making this device D
D
ideal for use in small power management circuitry. Typical G
applications are dc–dc converters, power management in
CASE 318G–02, Style 1
portable and battery–powered products such as computers,
3 TSOP 6 PLASTIC
printers, PCMCIA cards, cellular and cordless telephones.
GATE
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
SOURCE
• Miniature TSOP 6 Surface Mount Package Saves Board Space 4
• Visit our Web Site at http://www.mot–sps.com/ospd

Drain Current — Continuous @ TA = 25°C ID 3.3 A
Total Power Dissipation @ TA = 25°C Mounted on FR4 t 5 sec PD 2.0 W

MGSF3441VT1 7″ 8 mm embossed tape 3000
MGSF3441VT3 13″ 8 mm embossed tape 10,000

MGSF3441VT1
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 10 µA) 20 — —
(VDS = 20 Vdc, VGS = 0 Vdc) — — 1.0
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C) — — 4.0
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) IGSS — — ±100 nAdc
Gate Threshold Voltage VGS(th) Vdc
(VDS = VGS, ID = 250 µAdc) 0.45 — —
(VGS = 4.5 Vdc, ID = 3.3 A) — 0.078 0.090
(VGS = 2.5 Vdc, ID = 2.9 A) — 0.110 0.135
Input Capacitance (VDS = 5.0 V) Ciss — 90 — pF
Output Capacitance (VDS = 5.0 V) Coss — 50 —
Transfer Capacitance (VDG = 5.0 V) Crss — 10 —
Turn–On Delay Time td(on) — 27 50 ns
Rise Time ( DD = 15 Vdc, ID = 1.0 A,
(V tr — 17 30
Turn–Off Delay Time VGEN = 10 V, RL = 10 Ω) td(off) — 52 80
Fall Time tf — 45 70
Gate Charge QT — 3000 — pC
Pulsed Current ISM — — 20 A
Forward Voltage(2) VSD — 0.80 1.2 V

MGSF3441VT1
20 20
VGS = 4.5 V 4.0 V
3.5 V TC = –55°C 125°C
16 16
3.0 V
ID , DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)
25°C
12 12
2.5 V
8.0 8.0
2.0 V
4.0 4.0
1.5 V
0 0
0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0
VDS, DRAIN–TO–SOURCE VOLTAGE (V) VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
0.30 1400
1200
R DS(on) , ON–RESISTANCE ( W )
0.24
VGS = 2.5 V 1000
C, CAPACITANCE (pF)
0.18 800
600 Ciss
0.12
VGS = 4.5 V
400
0.06 Coss
200 Crss
0 0
0 4.0 8.0 12 16 20 0 4.0 8.0 12 16 20
ID, DRAIN CURRENT (A) VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 3. On–Resistance versus Drain Current Figure 4. Capacitance
5.0 1.8
R DS(on) , ON–RESISTANCE ( W) (NORMALIZED)
VGS , GATE–TO–SOURCE VOLTAGE (V)
VDS = 10 V VGS = 4.5 V

ID = 3.3 A 1.6 ID = 3.3 A
4.0
1.4
3.0
1.2
2.0
1.0
1.0
0.8
0 0.6
0 2.0 4.0 6.0 8.0 10 –50 –25 0 25 50 75 100 125 150
Qg, TOTAL GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Charge Figure 6. On–Resistance versus Junction

Temperature

MGSF3441VT1
20 0.30
TJ = 150°C ID = 3.3 A
R DS(on) , ON–RESISTANCE ( W )
0.24
IS , SOURCE CURRENT (A)
10
TJ = 25°C
0.18
0.12
0.06
1.0 0
0 0.25 0.50 0.75 1.00 1.25 1.50 0 2.0 4.0 6.0 8.0
VSD, SOURCE–TO–DRAIN VOLTAGE (V) VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 7. Source–Drain Diode Forward Voltage Figure 8. On–Resistance versus

Gate–to–Source Voltage
0.4 20
0.3
16
V GS(th) , VARIANCE (V)
0.2
POWER (W)
12
0.1
ID = 250 mA 8.0
0
4.0
–0.1
–0.2 0
–50 –25 0 25 50 75 100 125 150 0.01 0.1 1.0 10
TJ, TEMPERATURE (°C) TIME (sec)
Figure 9. Threshold Voltage Figure 10. Single Pulse Power
2.0
NORMALIZED EFFECTIVE TRANSIENT
1.0
DUTY CYCLE = 0.5
THERMAL IMPEDANCE
0.2
NOTES:
0.1
0.1 PDM 1. DUTY CYCLE, D = t1/t2
2. PER UNIT BASE =
0.05
2. RthJA = 62.5°C/W
3. TJM – TA = PDMZthJA(t)
0.02 t1 4. SURFACE MOUNTED
SINGLE PULSE t2
0.01
0.0001 0.001 0.01 0.1 1.0 10 30
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient

MOTOROLA

MGSF3441XT1

P–CHANNEL
TMOS Single P-Channel ENHANCEMENT–MODE
rDS(on) = 78 mΩ (TYP)
Part of the GreenLine Portfolio of devices with energy– 

conserving traits.
D
D
These miniature surface mount MOSFETs utilize Motorola’s 1 2 5 6 S
High Cell Density, HDTMOS process. Low rDS(on) assures DRAIN
D
minimal power loss and conserves energy, making this device D
G
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in CASE 318G–02, Style 1
portable and battery–powered products such as computers, 3 TSOP 6 PLASTIC
printers, PCMCIA cards, cellular and cordless telephones. GATE
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life SOURCE
• Miniature TSOP 6 Surface Mount Package Saves Board Space 4
• Visit our Web Site at http://www.mot–sps.com/ospd

Drain Current — Continuous @ TA = 25°C ID 1.5 A

MGSF3441XT1 7″ 8 mm embossed tape 3000
MGSF3441XT3 13″ 8 mm embossed tape 10,000
REV 2

MGSF3441XT1
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 10 µA) 20 — —
(VDS = 20 Vdc, VGS = 0 Vdc) — —

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Small Signal - Transistors, Fets and Diodes Device Databook PDF

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Selector Guide 1

Tape and Reel Specifications

Motorola Small-Signal Transistors, FETs and Diodes Device Data

Motorola Small-Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

Motorola Small–Signal Transistors, FETs and Diodes Device Data i

ii Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola Small–Signal Transistors, FETs and Diodes Device Data iii

iv Motorola Small–Signal Transistors, FETs and Diodes Device Data

Table 1. Plastic–Encapsulated General–Purpose Transistors

Case 29–04 — TO–226AA (TO–92)

Devices listed in bold, italic are Motorola preferred devices.

Table 1. Plastic–Encapsulated General–Purpose Transistors (continued)

Case 29–05 — TO–226AE (1–WATT TO–92)

Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity

Case 29–04 — TO–226AA (TO–92)

Devices listed in bold, italic are Motorola preferred devices.

Table 3. Plastic–Encapsulated Darlington Transistors

Table 4. Plastic–Encapsulated High–Current Transistors

Case 29–05 — TO–226AE (1–WATT TO–92)

Devices listed in bold, italic are Motorola preferred devices.

Table 5. Plastic–Encapsulated High–Voltage Amplifier Transistors

Case 29–05 — TO–226AE (1–WATT TO–92) — NPN

Devices listed in bold, italic are Motorola preferred devices.

Table 6. Plastic–Encapsulated RF Transistors

Case 29–04 — TO–226AA (TO–92) — NPN

Table 7. Plastic–Encapsulated High–Speed Saturated Switching Transistors

Case 29–04 — TO–226AA (TO–92) — NPN

Devices listed in bold, italic are Motorola preferred devices.

Table 8. Plastic–Encapsulated Choppers

Case 29–04 — TO–226AA (TO–92) — NPN

Table 9. Plastic–Encapsulated Telecom Transistors

Case 29–04 — TO–226AA (TO–92) — NPN

Devices listed in bold, italic are Motorola preferred devices.

Table 10. Plastic–Encapsulated Multiple Transistors — Quad

Case 646–06 — TO–116

Table 11. Plastic–Encapsulated Multiple Transistors — Quad Surface Mount

Devices listed in bold, italic are Motorola preferred devices.

Surface Mount Transistors 1

Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors

Case 318–08 — TO–236AB (SOT–23) — NPN

Devices listed in bold, italic are Motorola preferred devices.

Table 12. Plastic–Encapsulated Surface Mount General–Purpose Transistors (continued)

Case 318D–04 — SC–59 — NPN

Devices listed in bold, italic are Motorola preferred devices.

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

Table 13. Plastic–Encapsulated Surface Mount Bias Resistor Transistors

Case 318D–04 — SC–59

Case 318–08 — TO–236AB (SOT–23)

Devices listed in bold, italic are Motorola preferred devices.

Pinout: 1–Base, 2–Emitter, 3–Collector

Device Marking V(BR)CEO hFE@ IC IC

Case 419B–01 — SOT–363 Duals

Case 419B–01 — SOT–363 — Dual Combination NPN and PNP

Device Marking V(BR)CEO hFE@ IC IC

Devices listed in bold, italic are Motorola preferred devices.

Table 14. Plastic–Encapsulated Surface Mount Switching Transistors

Table 15. Plastic–Encapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators

Devices listed in bold, italic are Motorola preferred devices.

Table 16. Plastic–Encapsulated Surface Mount Choppers

Table 17. Plastic–Encapsulated Surface Mount Darlingtons

Table 18. Plastic–Encapsulated Surface Mount Low–Noise Transistors

Devices listed in bold, italic are Motorola preferred devices.