FDD850N10L N-Channel PowerTrench® MOSFET

December 2010

FDD850N10L
N-Channel PowerTrench® MOSFET
100V, 15.7A, 75mΩ
Features Description
• RDS(on) = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
• RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A tailored to minimize the on-state resistance and yet maintain
• Low Gate Charge ( Typ. 22.2nC) superior switching performance.

• Low Crss ( Typ. 42pF)

• Fast Switching
Application
• 100% Avalanche Tested
• DC to DC Converters / Synchronous Rectification
• Improve dv/dt Capability

• RoHS Compliant

D
D

G
D-PAK
G S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol Parameter Rating Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
- Continuous (TC = 25oC) 15.7
ID Drain Current A
- Continuous (TC = 100oC) 11.1
IDM Drain Current - Pulsed (Note 1) 63 A
EAS Single Pulsed Avalanche Energy (Note 2) 41 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25oC) 50 W
PD Power Dissipation
- Derate above 25oC 0.33 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +175 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Units
RθJC Thermal Resistance, Junction to Case - 3.0 oC/W
RθJA Thermal Resistance, Junction to Ambient - 87

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD850N10L Rev. A5

This datasheet has been downloaded from http://www.digchip.com at this page

 FDD850N10L N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD850N10L FDD850N10L D-PAK 380mm 16mm 2500

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25oC - 0.1 - V/oC
ΔTJ Coefficient
VDS = 80V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS = 80V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 1.0 - 2.5 V
VGS = 10V, ID = 12A - 61 75 mΩ
RDS(on) Static Drain to Source On Resistance
VGS = 5V, ID = 12A - 64 96 mΩ
gFS Forward Transconductance VDS = 10V, ID = 15.7A (Note 4) - 31 - S

Dynamic Characteristics
Ciss Input Capacitance - 1100 1465 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 80 105 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 42 - pF
Qg(tot) Total Gate Charge at 10V VGS = 10V - 22.2 28.9 nC
Qg(tot) Total Gate Charge at 5V VGS = 5V VDS = 80V - 12.3 16.0 nC
Qgs Gate to Source Gate Charge ID = 15.7A - 3.0 - nC
Qgd Gate to Drain “Miller” Charge - 5.7 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 17 44 ns
tr Turn-On Rise Time VDD = 50V, ID = 15.7A - 21 52 ns
td(off) Turn-Off Delay Time VGS = 5V, RGEN = 4.7Ω - 27 64 ns
tf Turn-Off Fall Time (Note 4, 5) - 8 26 ns
ESR Equivalent Series Resistance (G-S) - 1.75 - Ω

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 15.7 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 63 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V
trr Reverse Recovery Time VGS = 0V, VDS = 80V, ISD = 15.7A - 38 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/μs (Note 4) - 50 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 9.1A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FDD850N10L Rev. A5 2 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS = 15.0V *Notes:
10.0V 1. VDS = 10V
6.0V 2. 250μs Pulse Test
5.0V
3.5V
ID, Drain Current[A]

ID, Drain Current[A]

3.0V 10
o
175 C
o
10 25 C
o
-55 C
1

*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
1 0.1
0.1 1 10 0 2 4 6
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.20 100

0.16
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

o
175 C

0.12
RDS(ON) [Ω],

o
25 C
VGS = 5V 10

0.08
VGS = 10V

0.04 *Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
0.00 1
0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000 10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]

Crss = Cgd
VDS = 20V
8 VDS = 50V
1000 VDS = 80V
Ciss
Capacitances [pF]

4
100 Coss

2
*Note:
1. VGS = 0V Crss
2. f = 1MHz *Note: ID = 15.7A
10 0
0.1 1 10 100 0 4 8 12 16 20 24
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDD850N10L Rev. A5 3 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.15 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.10
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0
1.05

1.5
1.00
1.0

0.95 *Notes:
0.5 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250μA 2. ID = 12A
0.90 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] o
TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
100 18

15
100μs
ID, Drain Current [A]

10
ID, Drain Current [A]

12
VGS = 10V
1ms
1 9
Operation in This Area 10ms
is Limited by R DS(on) VGS = 5V
100ms
6
DC
0.1 *Notes:
o
1. TC = 25 C
o
3
2. TJ = 175 C o
RθJC = 3.0 C/W
3. Single Pulse
0.01 0
0.1 1 10 100 200 25 50 75 100 125 150 175
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0.5
Thermal Response [ZθJC]

1
0.2

0.1
PDM
0.05
t1
0.02 t2
0.1
0.01
Single pulse *Notes:
o
1. ZθJC(t) = 3.0 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

FDD850N10L Rev. A5 4 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
5V

FDD850N10L Rev. A5 5 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FDD850N10L Rev. A5 6 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

FDD850N10L Rev. A5 7 www.fairchildsemi.com

 FDD850N10L N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ PowerTrench® The Power Franchise®
Auto-SPM™ FRFET® PowerXS™ The Right Technology for Your Success™
Build it Now™ Global Power ResourceSM Programmable Active Droop™ ®

CorePLUS™ Green FPS™ QFET®

CorePOWER™ Green FPS™ e-Series™ QS™
TinyBoost™
CROSSVOLT™ Gmax™ Quiet Series™
TinyBuck™
CTL™ GTO™ RapidConfigure™
TinyCalc™
Current Transfer Logic™ IntelliMAX™ ™ TinyLogic®
DEUXPEED® ISOPLANAR™
TINYOPTO™
Dual Cool™ MegaBuck™ Saving our world, 1mW/W/kW at a time™
TinyPower™
EcoSPARK® MICROCOUPLER™ SignalWise™
TinyPWM™
EfficentMax™ MicroFET™ SmartMax™
TinyWire™
ESBC™ MicroPak™ SMART START™
TriFault Detect™
® MicroPak2™ SPM®
TRUECURRENT™*
MillerDrive™ STEALTH™
® μSerDes™
Fairchild ® MotionMax™ SuperFET
Fairchild Semiconductor ® Motion-SPM™ SuperSOT™-3
FACT Quiet Series™ OptiHiT™ SuperSOT™-6
OPTOLOGIC® SuperSOT™-8 UHC®
FACT®
® OPTOPLANAR ®
SupreMOS ® Ultra FRFET™
FAST
® SyncFET™ UniFET™
FastvCore™
Sync-Lock™ VCX™
FETBench™
®* VisualMax™
FlashWriter® * PDP SPM™ XS™
FPS™ Power-SPM™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I51
FDD850N10L Rev. A5 8 www.fairchildsemi.com