University of Pangasinan-PHINMA

Department of Electronics and Communications Engineering

Pangasinan, Philippines

Industrial Electronics Data Sheets

in partial fulfilment for the

requirements in

Industrial Electronics

Submitted to: Engr. Cesar Velasco

Submitted by: Lyndon G. Padama

Date Submitted: January 11, 2011

SILICON CONTROLLED RECTIFIER (SCR)

A. Product Description

1. Part No./Model:
2N5060 Series

2. Packaging Type:
It is supplied in an inexpensive plastic TO−92/TO-226AA package which is readily
adaptable for use in automatic insertion equipment.

3. Specifications/ Rating
Silicon Controlled Rectifiers (0.8 A RMS, 30 − 200 V)
Sensitive Gate Trigger Current − 200 A Maximum
Low Reverse and Forward Blocking Current − 50 A Maximum, TC = 110°C
Low Holding Current − 5 mA Maximum

4. Country of Origin / Brand Name:

United States of America / ON Semiconductor - Sensitive Gate Silicon Controlled
Rectifiers: Reverse Blocking Thyristors
B. Drawing / Picture

C. Discussion

Annular PNPN devices designed for high volume consumer applications such as relay
and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and
detection circuits. It is supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.

D. Reference
http://onsemi.com
SILICON CONTROLLED RECTIFIER (SCR)

A. Product Description

1. Part No./Model:
MCR100 Series

2. Packaging Type:
Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for
use in automatic insertion equipment

3. Specifications/ Rating
Blocking Voltage to 600 V
On−State Current Rating of 0.8 A RMS at 80°C
High Surge Current Capability − 10 A
Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
Immunity to dV/dt − 20 V/sec Minimum at 110°C

4. Country of Origin / Brand Name:

United States of America / ON Semiconductor - Sensitive Gate Silicon Controlled
Rectifiers: Reverse Blocking Thyristors
B. Drawing / Picture

C. Discussion
Annular PNPN devices designed for high volume consumer applications such as relay
and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and
detection circuits. It is supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.

D. Reference
http://onsemi.com
A. Product Description

1. Part No./Model:
UPGA350A

2. Packaging Type:
Molded Epoxy

3. Specifications/ Rating

4. Country of Origin / Brand Name:

United States of America / Microsemiconductor - Nanosecond SCR Switch

B. Drawing / Picture
C. Discussion

Designed for high current narrow-pulse switching applications where size and current
handling capability are critical. These devices may be triggered on using low power logic
drivers from (+0.8 V at 200 μA).
Nanosecond SCR switch for reliable high current pulse generators, modulators and
photo-flash quenching. Several new applications for nanosecond SCR switches include
automotive collision avoidance systems, laser drivers, photo-flash quenching circuits,
specially developed circuits for the emerging digital imaging range finders and
communication markets.

D. Reference
http://www.microsemi.com
UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:
NTE6410

2. Packaging Type:
TO92 type package

3. Specifications/ Rating

4. Country of Origin / Brand Name:

United States of America / Philips Semiconductor - Unijunction Transistor (UJT)

B. Drawing / Picture

C. Discussion
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use
in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

D. Reference
http://www.semiconductors.philips.com

PROGRAMMABLE UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:
2N6027/28

2. Packaging Type:
Supplied in an inexpensive TO–92 plastic package for high–volume requirements,
this package is readily adaptable for use in automatic insertion equipment.

3. Specifications/ Rating
Programmable — RBB, h, IV and IP
Low On–State Voltage — 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current — 10 nA Maximum
High Peak Output Voltage — 11 Volts Typical
Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)

4. Country of Origin / Brand Name:

United States of America / ON Semiconductor - Programmable Unijunction
Transistor Triggers
B. Drawing / Picture

C. Discussion
Designed to enable the engineer to “program’’ unijunction characteristics such as
RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor–
trigger, oscillator, pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate.

D. Reference
http://onsemi.com
PROGRAMMABLE UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:
BRY39
2. Packaging Type:
TO-72 metal package
3. Specifications/ Rating

4. Country of Origin / Brand Name:

United States of America / Philips - Programmable Unijunction Transistor / Silicon
controlled switch

B. Drawing / Picture
C. Discussion
Silicon planar PNPN switch or trigger device. It is an integrated PNP/NPN transistor
pair with all electrodes accessible. For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To simplify the symbols, the term gate
instead of anode gate will be used.

D. Reference
http://www.semiconductors.philips.com
PROGRAMMABLE UNIJUNCTION TRANSISTOR (UJT)

1. Part No./Model:
CMPP6027, CMPP6028

2. Packaging Type:
Manufactured in a surface mount SOT- 23 package

3. Specifications/ Rating

4. Country of Origin / Brand Name:

United States of America / Central Semiconductor - Surface Mount Programmable
Unijunction Silicon Transistor
B. Drawing / Picture

C. Discussion
The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable
Unijunction Transistors designed for adjustable (programmable) characteristics such as,
Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).

D. Reference
Central Semiconductor Corporation