2SK3262-01MR FUJI POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Features TO-220F15

High speed switching

Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators 2.54

UPS (Uninterruptible Power Supply)

DC-DC converters 3. Source

Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic

(Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Drain-source voltage V DS 200 Drain(D)
V
Continuous drain current ID ±20 A
Pulsed drain current ID(puls] ±80 A
Gate-source voltage VGS ±20 V
Maximum Avalanche Energy EAV *1 355 mJ Gate(G)
Max. power dissipation Ta=25°C PD 2 W
Source(S)
Tc=25°C PD 45 W
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=1.6mH, Vcc=24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 200 V
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 1.0 1.5 2.0 V
VDS=200V Tch=25°C 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 0.5 mA
Gate-source leakage current IGSS VGS=±20V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=10A VGS=4V 110 150 mΩ
ID=10A VGS=10V 85 100
Forward transcondutance gfs ID=10A VDS=25V 9.0 19.0 S
Input capacitance Ciss VDS =25V 1700 2550
Output capacitance Coss VGS =0V 290 435 pF
Reverse transfer capacitance Crss f=1MHz 185 280
Turn-on time ton td(on) VCC=100V ID=20A 10 15
tr VGS=10V 45 70 ns
Turn-off time toff td(off) RGS=10 Ω 225 340
tf 120 180
Avalanche capability IAV L=100µH Tch=25°C 20 A
Diode forward on-voltage V SD IF=20A VGS=0V Tch=25°C 0.93 1.40 V
Reverse recovery time trr IF=20A VGS=0V 250 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 2.90 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 2.78 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 62.5 °C/W

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2SK3262-01MR FUJI POWER MOSFET
Characteristics
Power Dissipation Safe operating area
PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C
2
50 10

t=
40
1µs
D.C. 10µs
1
10
100µs
30
PD [W]

1ms

ID [A]
20
0 10ms
10

t
10 t
D=
T
100ms
T

-1
0 10
0 50 100 150 10
0
10
1
10
2
10
3

Tc [°C]
VDS [V]

Typical output characteristics Typical transfer characteristics

ID=f(VDS):80µs pulse test,Tc=25°C ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
50 100
VGS=20V 15V

10V 5.0V
40
4.5V

4.0V
10
30
ID [A]
ID [A]

3.5V

20

1
3.0V

10

0 0.1
0 1 2 3 4 5 6 0 1 2 3 4 5

VDS [V] VGS [V]

Typical forward transconductance Typical Drain-Source on-State Resistance

gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs pulse test,Tch=25°C
2 0.22
10 VGS=
3.0V 3.5V
0.20

0.18

0.16

1
4.0V
10 0.14
4.5V
RDS(on) [Ω ]

0.12 5.0V
10V
gfs [s]

15V
0.10 20V

0.08
0
10
0.06

0.04

0.02

-1 0.00
10 10-1 10
0
10
1
10
2
0 10 20 30 40 50 60

ID [A] ID [A]

2
2SK3262-01MR FUJI POWER MOSFET

Drain-source on-state resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=10A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=1mA
300 3.0

250 2.5

200 2.0
max.
RDS(on)[m Ω]

VGS(th) [V]
max.
150 1.5
typ.

typ.
100 1.0
min.

50 0.5

0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]

Typical capacitances Typical Gate Charge Characteristics

C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=20A,Tch=25°C
100n 200 20

180 18
VDS VGS
160 16

140 14
Vcc=160V
10n
120 100V 12

VGS [V]
VDS [V]
C [F]

40V
100 10

Ciss 80 8

1n
60 6

40 4

Coss
20 2
Crss

100p 0 0
-2 -1 0 1 2
10 10 10 10 10 0 20 40 60 80 100 120 140 160 180 200
VDS [V] Qg [nC]
Typical Forward Characteristics of Reverse Diode Maximum Avalanche Current vs. starting Tch
-ID=f(VSD):80µs pulse test,Tch=25°C I(AV)=f(starting Tch),Non Repetitive
50 25

40 20

30 15
I(AV) [A]
-ID [A]

20 10

10 5
10V VGS=0V

0 0
0 25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Starting Tch [°C]
VSD [V]

3
2SK3262-01MR FUJI POWER MOSFET

Maximum Avalanche energy vs. starting Tch Transient Thermal Impedance

Eas=f(starting Tch):Vcc=24V,I
AV
<=20A,Non-Repetitive Zth(ch-c)=f(t):D=t/T
1
500 10

D=0.5
0
400 10
0.2

0.1

Zth(ch-c) [°C/W]
0.05
300 -1
10 0.02
Eas [mJ]

0.01

200
-2 t
10 0 t
D=
T
T

100
-3
10 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10

0
t [sec]
0 25 50 75 100 125 150

Starting Tch [°C]

4
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