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SY ( f ) = S X ( f ) H ( f )
2
Since SX(f) is an even function of f for real x(t), the total power carried by
x(t) in the frequency range [f1 f2] is equal to
− f1 + f2 + f2
Pf1 , f 2 = ∫− f S X ( f )df + ∫+ f S X ( f )df = 2 ∫+ f S X ( f )df
2 1 1
where σ and m are the standard deviation and mean of the distribution,
respectively.
Correlated and Uncorrelated Sources
We add two noise waveforms and take average of the resulting power:
1
[ ]
+T / 2
Pav = lim
T →∞ T ∫−T / 2 x 1 (t ) + x 2 (t ) 2
dt
1 +T / 2 1 +T / 2 1 +T / 2
= lim ∫ x12 (t )dt + lim ∫ x 22 (t )dt + lim ∫ 2 x1 (t )x 2 (t )dt
T →∞ T −T / 2 T →∞ T −T / 2 T →∞ T −T / 2
1 +T / 2
= Pav 1 + Pav 2 + lim ∫ 2 x1 (t )x 2 (t )dt
T →∞ T −T / 2
correlation
The thermal noise of a resistor R can be modeled by a series voltage source, with the
one-sided spectral density
Vn2 = Sv(f) = 4kTR, f ≥ 0,
where k = 1.38×10−23 J/K is the Boltzmann constant and Sv(f) is expressed in V2/Hz.
Resistor Thermal Noise (2/3)
• Example: low-pass filter
Vout
We compute the transfer function from VR to Vout: (s ) = 1
VR RCs + 1
2
V 1
From the theorem, we have S out ( f ) = S R ( f ) out ( f ) = 4kTR 2 2 2 2 .
VR 4π R C f + 1
• Example
Since the two noise sources are uncorrelated, we add the powers:
1 1
I n2,tot = I n21 + I n22 = 4kT +
R1 R2
The equivalent noise voltage is given by
Vn2,tot = I n2,tot (R1 R2 ) = 4kT (R1 R2 )
2
MOSFET Thermal Noise
• Thermal noise of a MOSFET
For the MOS devices operating in saturation, the channel noise
can be modeled by a current source connected between the drain
and source terminals with a spectral density: I n2 = 4kTγg m ,
where γ is equal to 2/3 for long-channel transistors and may be a
large value (2) for submicron MOSFETs.
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MOS Noise
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Noise in Circuits (1/2)
• How to quantify the effect of noise?
The natural approach would be to set the
input to zero and calculate the total noise
at the output due to various sources of
noise in the circuit.
( )
Vn2,out = I n2,th + I n2,1 / f + I n2, RD RD2
2 K 1 4kT 2
= 4kT g m + ⋅ ⋅ g m2 + RD
3 CoxWL f RD
• Example
Noise in Circuits (2/2)
• Determination of input-referred noise voltage
If the voltage gain is Av, then we have Vn2,out = Av2 Vn2,in , that is, the input-referred
noise voltage is given by the output noise voltage divided by the gain.
The input-referred noise indicates how much the input signal is corrupted by the
circuit’s noise, i.e., how small an input the circuit can detect with acceptable SNR.
The input-referred noise is a fictitious quantity in that it cannot be measured at the
input of the circuit.
Common-Source Stage (1/3)
2 K 1 4kT 2
Vn2,out = 4kT g m + ⋅ ⋅ g m2 + RD
• CS stage 3 C oxWL f R D
Vn2,out 2 1 K 1
V 2
n ,in = = 4kT + 2 +
Av2 3 g m g m RD CoxWL f
2 2
Thermal noise: Vn2,out = 4kT g m1 + g m 2 (ro1 ro 2 )
2
3 3
Voltage gain: |Av| = gm1(ro1||ro2)
The total noise voltage referred to the gate of M1 is
2 2 1 2 2g
Vn2,in = 4kT g m1 + g m 2 2 = 4kT + m2 2
3 3 g m1 3 g m1 3 g m1
It reveals the dependence of Vn2,in upon gm1 and gm2, confirming that gm2
must be minimized because M2 serves as a current source.
Common-Source Stage (3/3)
• How to design a CS stage for low-noise
operation?
Vn2,out 2 1 K 1
V 2
n ,in = = 4kT + 2 +
Av2 3 g m g m RD CoxWL f
For thermal noise, we must maximize gm by increasing the drain current or the device
width. A higher ID translates to greater power dissipation and limited output voltage
swings while a wider device leads to larger input and output capacitance. We can also
increase RD, but at the cost of limiting the voltage headroom and lowering the speed.
For 1/f noise, the primary approach is to increase the area of the transistor. If WL is
increased while W/L remains constant, then the device gm and its thermal noise do not
change but the device capacitances increase.
These observations point to the trade-offs between noise, power dissipation,
voltage headroom, and speed.
Differential Pairs (1/2)
⇒ Vn2,out M1 , M 2 ( )
= I n21 + I n22 RD2
Taking into account the noise of RD1 and RD2, the total output noise:
Vn2,out M1 , M 2 ( )
= I n21 + I n22 RD2 + 2(4kTRD )
2
= 8kT g m RD2 + RD
3
And, |Av| = gmRD, we have
Vn2,out 2 1
Vn2,in = 2
= 8kT + 2 ≈ 2Vn2,in CS stage
Av 3 g m g m RD
Noise Bandwidth
• Output noise spectrum of a circuit