PD- 95352

IRFL014NPbF
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l Fast Switching RDS(on) = 0.16Ω
l Fully Avalanche Rated G
l Lead-Free
ID = 1.9A
Description S
Fifth Generation HEXFET® MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has SOT-223
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.9
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.5
IDM Pulsed Drain Current  15
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 48 mJ
IAR Avalanche Current 1.7 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120
°C/W
RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.16 Ω VGS = 10V, ID = 1.9A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.6 ––– ––– S VDS = 25V, ID = 0.85A
––– ––– 1.0 VDS = 44V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– 7.0 11 ID = 1.7A
Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 3.3 5.0 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 6.6 ––– VDD = 28V
tr Rise Time ––– 7.1 ––– ID = 1.7A
ns
td(off) Turn-Off Delay Time ––– 12 ––– RG = 6.0Ω
tf Fall Time ––– 3.3 ––– RD = 16Ω, See Fig. 10 „
Ciss Input Capacitance ––– 190 ––– VGS = 0V
Coss Output Capacitance ––– 72 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 33 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 1.3
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse
––– ––– 15
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, I F = 1.7A
Qrr Reverse RecoveryCharge ––– 64 95 nC di/dt = 100A/µs ƒ

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 8.2mH
RG = 25Ω, IAS = 3.4A. (See Figure 12)
ƒ ISD ≤ 1.7A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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 IRFL014NPbF
100 100 VGS
VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , Drain-to-Source Current (A)

I , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10 10

1 1 4.5V

4.5V

D
D

20µs PULSE WIDTH 20µs PULSE WIDTH

TC = 25°C TJ = 150°C
0.1 A 0.1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = 1.7A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

1.5

10
(Normalized)

TJ = 150°C 1.0

TJ = 25°C
1

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
A A
4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFL014NPbF
350 20
V GS = 0V, f = 1MHz I D = 1.7A
C iss = Cgs + C gd , Cds SHORTED V DS = 44V
C rss = C gd

V GS , Gate-to-Source Voltage (V)

300 V DS = 28V
C oss = C ds + C gd 16 V DS = 11V
Ciss
C, Capacitance (pF)

250

200
Coss 12

150
8

100 Crss
4
50
FOR TEST CIRCUIT
SEE FIGURE 9
0 A 0 A
1 10 100 0 2 4 6 8 10
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

I D , Drain Current (A)

10 10

TJ = 150°C 100µs

TJ = 25°C
1ms
1 1

10ms
TA = 25°C
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFL014NPbF
RD
QG V DS

VGS
10V QGS QGD D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Charge Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ 90%
12V .2µF
.3µF

+
V
D.U.T. - DS
10%
VGS VGS
3mA td(on) tr t d(off) tf

IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms

1000
Thermal Response (Z thJA )

100
D = 0.50

0.20
0.10
10
0.05
PDM
0.02
0.01 t
1
1 t2

Notes:
SINGLE PULSE 1. Duty factor D = t /t
1 2
(THERMAL RESPONSE)
2. Peak TJ = PDM x Z thJA + T A
0.1 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFL014NPbF

120
ID

EAS , Single Pulse Avalanche Energy (mJ)

15V TOP 1.5A
2.7A
100
BOTTOM 3.4A

L DRIVER
VDS 80

RG D.U.T +
V 60
- DD
IAS A
20V
tp 0.01Ω 40

Fig 12a. Unclamped Inductive Test Circuit

20

VDD = 25V
0 A
25 50 75 100 125 150
V(BR)DSS
Starting TJ , Junction Temperature (°C)
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

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SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking Information

HEXFET PRODUCT MARKING
T HIS IS AN IRFL014

PART NUMBER LOT CODE

INT ERNAT IONAL
RECT IFIER FL014
AXXXX
LOGO 314P
DAT E CODE A = AS S EMBLY S ITE
(YYWW) CODE
YY = YEAR
WW = WEEK BOT T OM
T OP
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)

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IRFL014NPbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)

4.10 (.161) 0.35 (.013)

3.90 (.154) 1.85 (.072)
2.05 (.080) 1.65 (.065) 0.25 (.010)

TR 1.95 (.077)

7.55 (.297)
7.45 (.294)
16.30 (.641)
7.60 (.299) 15.70 (.619)
7.40 (.292)

1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
7.10 (.279) 2.30 (.090)
6.90 (.272) 2.10 (.083)
12.10 (.475)
11.90 (.469)

NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

13.20 (.519) 15.40 (.607)

12.80 (.504) 11.90 (.469)

330.00 50.00 (1.969)

(13.000) MIN.
MAX.

18.40 (.724)
NOTES :
MAX.
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4
3. DIMENSION MEASURED @ HUB. 12.40 (.488)
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
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