AUIRF3805S-7P
AUTOMOTIVE GRADE
AUIRF3805L-7P
Features
  VDSS 55V
 Advanced Process Technology
 Ultra Low On-Resistance RDS(on) typ. 2.0m
 175°C Operating Temperature max. 2.6m
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax ID 240A
 Lead-Free, RoHS Compliant
 Automotive Qualified *  
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
D2Pak 7 Pin TO-263CA 7 Pin
175°C junction operating temperature, fast switching AUIRF3805S-7P AUIRF3805L-7P
speed and improved repetitive avalanche rating. These
features combine to make this design an extremely G D S
efficient and reliable device for use in Automotive
Gate Drain Source
applications and wide variety of other applications.
Standard Pack
Base Part Number Package Type Complete Part Number
Form Quantity
AUIRF3805L-7P TO-263-7PIN Tube 50 AUIRF3805L-7P
Tube 50 AUIRF3805S-7P
AUIRF3805S-7P D2Pak-7PIN
Tape and Reel Left 800 AUIRF3805S-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 240
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 170
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 160
IDM Pulsed Drain Current  1000
PD @TC = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited)  440
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value  680
IAR Avalanche Current  See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy  mJ
dv/dt Peak Diode Recovery  2.3 V/ns
TJ Operating Junction and -55 to + 175  
TSTG Storage Temperature Range °C 
Soldering Temperature, for 10 seconds (1.6mm from case) 300  

Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.50
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
°C/W
RJA Junction-to-Ambient ––– 62
RJA Junction-to-Ambient (PCB Mount, steady state)  ––– 40

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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AUIRF3805S/L-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) SMD Static Drain-to-Source On-Resistance ––– 2.0 2.6 m VGS = 10V, ID = 140A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 110 ––– ––– S VDS = 25V, ID = 140A
––– ––– 20 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
IGSS   nA  
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 130 200 ID = 140A
Qgs Gate-to-Source Charge ––– 53 ––– nC   VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 49 ––– VGS = 10V 
td(on) Turn-On Delay Time ––– 23 ––– VDD = 28V
tr Rise Time ––– 130 ––– ID = 140A
ns
td(off) Turn-Off Delay Time ––– 80 ––– RG = 2.4
tf Fall Time ––– 52 ––– VGS = 10V 
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH  
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact
Ciss Input Capacitance ––– 7820 –––   VGS = 0V
Coss Output Capacitance ––– 1260 –––   VDS = 25V
Crss Reverse Transfer Capacitance ––– 610 ––– pF ƒ = 1.0 MHz, See Fig. 5
Coss Output Capacitance ––– 4310 –––   VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance 980   VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance  ––– 1540 –––   VGS = 0V, VDS = 0V to 44V
Diode Characteristics  
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 240
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 1000
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V 
trr   Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 140A, VDD = 28V
Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 This value determined from sample failure
population starting TJ = 25°C, L=0.043mH,
RG = 25, IAS = 140A,VGS =10V.
 Pulse width  1.0ms; duty cycle 2%.
 Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
 This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
 R is measured at TJ of approximately 90°C.
 Solder mounted on IMS substrate.
 Limited by TJmax starting TJ = 25°C, L=0.043mH,
RG = 25, IAS = 140A,VGS =10V.Part not recommended for use above
this value.

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AUIRF3805S/L-7P

10000 10000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
1000
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 1000 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100

100

10
4.5V
10
1 4.5V
60µs PULSE WIDTH 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.1 1
0.1 1 10 100 1000 0.1 1 10 100 1000
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

250
1000
T J = 25°C
Gfs, Forward Transconductance (S)

200
ID, Drain-to-Source Current )

T J = 175°C
100
150

T J = 175°C
100
T J = 25°C
10

50 V DS = 10V
VDS = 25V
380µs PULSE WIDTH
60µs PULSE WIDTH
1.0 0
2 4 6 8 10 0 20 40 60 80 100 120
ID ,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Transconductance

vs. Drain Current

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AUIRF3805S/L-7P

12.0
100000
VGS = 0V, f = 1 MHZ ID= 140A
VDS = 64V
C iss = Cgs + Cgd, C ds SHORTED
10.0 VDS = 40V

VGS, Gate-to-Source Voltage (V)

C rss = Cgd
C oss = Cds + Cgd
8.0
C, Capacitance(pF)

10000 C iss

6.0
Coss

C rss 4.0
1000

2.0

0.0
100
0 50 100 150
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

10000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

1000 1000
ISD, Reverse Drain Current (A)

100µsec
T J = 175°C 1msec
100 100

T J = 25°C 10msec
10 10

DC
1 1
Tc = 25°C
Tj = 175°C
VGS = 0V
Single Pulse
0.1 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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AUIRF3805S/L-7P

250 2.5
ID = 140A

R DS(on) , Drain-to-Source On Resistance

VGS = 10V
200
2.0
ID, Drain Current (A)

150

(Normalized)
1.5

100

1.0
50

0 0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140160 180
T C , Case Temperature (°C) T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance

Case Temperature vs. Temperature

D = 0.50
Thermal Response ( Z thJC )

0.1 0.20
0.10 R1
R1
R2
R2
R3
R3
Ri (°C/W) i (sec)
0.05 J C
J C 0.0794 0.000192
0.02 1 2 3
1 2 3
0.01 0.1474 0.000628
0.01 Ci= iRi
SINGLE PULSE Ci= iRi
0.2737 0.014012
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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AUIRF3805S/L-7P

15V

DRIVER 2000
VDS L
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 21A
37A
RG D.U.T + 1500
V BOTTOM 140A
- DD
IAS A
20V
tp 0.01
1000

Fig 12a. Unclamped Inductive Test Circuit

500

V(BR)DSS
0
tp 25 50 75 100 125 150 175

Starting T J , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

I AS

Fig 12b. Unclamped Inductive Waveforms

Id
Vds

Vgs

5.0
VGS(th) Gate threshold Voltage (V)

4.5
Vgs(th)

4.0

3.5
Qgs1 Qgs2 Qgd Qgodr
ID = 250µA
Fig 13a. Basic Gate Charge Waveform 3.0
ID = 1.0mA
ID = 1.0A
2.5

2.0

1.5
-75 -50 -25 0 25 50 75 100 125 150 175 200

T J , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

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AUIRF3805S/L-7P

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Avalanche Current (A)

Tstart =25°C (Single Pulse)

100

0.01

0.05
10 0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Typical Avalanche Current vs. Pulse width

500
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP Single Pulse
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle
1. Avalanche failures assumption:
400 ID = 140A
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
300 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
200 during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
100 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
0 ZthJC(D, tav) = Transient thermal resistance, see Figures 11)
25 50 75 100 125 150 175

Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC

Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature

 7 2017-10-09
 
AUIRF3805S/L-7P

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

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AUIRF3805S/L-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)

D2Pak - 7 Pin Part Marking Information

Part Number AUF3805S-7P

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

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AUIRF3805S/L-7P

TO-263CA - 7 Pin Long Leads Package Outline

Dimensions are shown in millimeters (inches)

TO-263CA - 7 Pin Part Marking Information

Part Number AUF3805L-7P

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

  10 2017-10-09
 
AUIRF3805S/L-7P

D2Pak - 7 Pin Tape and Reel

  11 2017-10-09
 
AUIRF3805S/L-7P
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Indus-
trial and Consumer qualification level is granted by extension of the higher
Automotive level.
D2 PAK 7 Pin MSL1, 260°C
Machine Model Class M4(+/-425V)†
(Per AEC-Q101-002)
Human Body Model Class H3A(+/-4000V)†
ESD
(per AEC-Q101-001)
Charged Device Model Class C5 (+/-1000V)†
(per AEC-Q101-005)
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Updated data sheet with corporate template.
09/02/2015  
 Corrected ordering table on page1.
 Updated “Infineon” logo all pages.
09/30/2015
Updated disclaimer on last page
10/09/2017   Corrected typo error on part marking on page 9,10.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

12 2017-10-09