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2N2222A

Features
• Meets MIL-S-19500/255
• Collector-Base Voltage 75
75 Volts
• Collector Current: 800mA 0.8 Amps
• Fast Switching 335 nS

NPN
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING SYMBOL MAX. UNIT
5

Collector-Emitter Voltage VCEO Vdc

Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 800 mAdc
Total Device Dissipation @ T A = 25oC PD 0.5 Watt
Derate above 25 oC 2.85 mW/ oC
Total Device Dissipation @T C = 25oC PD 1.8 Watt
Derate above 25 oC 10.3 mW/ oC
o
Thermal Resistance, Junction to Ambient RθJA 350 C/W
o
Thermal Resistance, Junction to Case RθJC 97 C/W
o
Operating Temperature Range TJ -65 to + 200 C
o
Storage Temperature Range TSTG -65 to + 200 C

Mechanical Outline

Datasheet# MSC0275A 5/19/1997

 2N2222A

Electrical Parameters (TA @ 25°°C unless otherwise specified)

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage BVCE0 50 -- Vdc
(I C = 10 mAdc, I B = 0)
Collector-Emitter Breakdown Voltage BVCBO 75 -- Vdc
(IC = 10 µAdc, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 6.0 -- Vdc
(I E = 10 µAdc, IC = 0)
Collector to emitter Cutoff Current ICES -- 50 nAdc
(V CE = 30 Vdc)
Collector to base Cutoff Current I -- 10 nAdc
(V CE = 60 Vdc)
D.C. Current Gain hFE
(I C = 0.1 mAdc, V CE = 10 Vdc) 50 --
(I C = 1.0 mAdc, V CE = 10 Vdc) 75 325
(I C = 10 mAdc, V CE = 10 Vdc)(1) 100 --
o
(I C = 10 mAdc, V CE = 10 Vdc, T A = -55 C)(1) 35 --
(I C = 150 mAdc, V CE = 10 Vdc)(1) 100 300
(I C = 500 mAdc, V CE = 10 Vdc)(1) 30 --

Collector-Emitter Saturation Voltage(1) VCE(Sat) Vdc

(I C = 150 mAdc, I B = 15 mAdc) -- 0.3
(I C = 500 mAdc, I B = 50 mAdc) -- 1.0
Base-Emitter Saturation Voltage(1) VBE(Sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) 0.6 1.2
(I C = 500 mAdc, I B = 50 mAdc) -- 2.0
Current Gain-Bandwidth Product(2) fT Mhz
(I C = 20 mAdc, V CE = 20 Vdc, f = 100MHz) 250 --
Output Capacitance(3) COBO pf
(V CB = 10 Vdc, I E = 0, 100kHz < f < 1MHz -- 8.0
Input Capacitance CIBO pf
(V EB = 0.5 Vdc, I C = 0, 100kHz < f < 1MHz) -- 25
Switching Characteristics tON ns
Delay Time: (V CC = 30 Vdc, V BE(off) = -0.5 Vdc, td -- 10
Rise Time: I C = 150 mAdc, I B1 = 15 mAdc)(Figure 12) tr -- 25
toff
Storage Time: (V CC = 30 Vdc, I C = 150 mAdc, tS
Fall Time: I B1 = IB2 = 15 mAdc) tf -- 225
-- 60

Datasheet# MSC0275A 5/19/1997