TOSHIBA (DISCRETE/OPTO) 4SE D M@ 9097250 0017819 3 M@ETOSY TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 28032988 “T 33-00 POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE ANPLIFIER APPLICATIONS. osu, gassa2 FeatuREs: 7 |: psp Base-Baitter Voltage Wee | VoR=5¥, 1o-500mA =~ [- [ote Transition Frequency E WeE=10¥, Tg=1008 100 | - | we [collector Output Capacitance | Cop | Vos"10V. t¢-0, f-imie | - | 25] - | oF Note : hyp Classification 0: 70~140, ¥ + 120~240 asT-33-09 2803298B 4SE D MM 9097250 0017820 T METOSY TOSHIBA (DISCRETE/OPTO) fo = Vee Voe=8¥ a ote eee ee ee Opes esa COULBETOR-EVITTER VOLTAGE Yop (¥) SASE-DAITIEN YOLTAUE. Vou (WD ape - To Vox(eat) ~ fo s 1o/t=10 g E t age aor 0s aT as aa Gar ear aT ae aS COLUESTOR CUHHENT To ¢A) COLURSTOR GUREXT Te (A) SAPE OPERATING AREA rp wax (ruteeD)® | hte pe | oman rar TTeR (Bonrtwvous) : 1 = a I A You=10¥ t i & bresen a SSS a. 8 E 2 100] ase > zo 5 % EE so Eas e = 5 . . if 3 3 ruse “Tecaee i 4 = Peewmanas ware caonanee a Ta ce gE ggf rman a c ees 1p Fy FF COLLEOTOR-RMITTER VOLTAOR Vox (¥) et