12/31/2019 PH868 - Solid State Electronic Device (2020) | IRIS

PH868 - Solid State Electronic Device (2020) | IRIS

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PH868 - Solid State Electronic Device

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Name: Solid State Electronic Device

Code: PH868

Course type: Electives

Credits: 3

L-T-P: 3-0-0

Course is valued for CGPA calculation?: Yes

Description

NATIONAL INSTITUTE OF TECHNOLOGY KARNATAKA, SURATHKAL

Even Semester 2019-2020

Department of Physics

26-12-2019

https://iris.nitk.ac.in/hrms/courses/26105 1/5
12/31/2019 PH868 - Solid State Electronic Device (2020) | IRIS

 
Course Plan and Evaluation Plan

1. Course Code : PH868

2. Course Title: Solid State Electronic Devices
3. L-T-P : (3-0-0)
4. Credits : 3
5. Prerequisites : Basics of quantum mechanics and solid state physics
6. Course Instructor/Developer: Prof. M. N. Satyanarayan
7. Teaching Department: Physics

8. Objective of the course:

This course aims to introduce students basic underlying physics and also
engineering challenges for a range of solid-state electronic devices. Familiarity with
some solid- state physics and quantum mechanics is assumed. On completion of
the course, students should be able to appreciate the physics and
engineering of semiconductor devices/systems, and describe experiments to measure
such systems, and to calculate straightforward problems.

9. Course Outcome:

The student develops basic understanding of the underlying physics of semiconductor

based devices and in particular pn junctions as well as metal semiconductor contacts. The
student will find this course very useful to take on research and development activities in
semiconductors.

Text books and study materials:

1. Semiconductor physics and devices -- Basic principles by Donald A. Neamen, 4th Ed,
Mcgraw Hill Int. Ed.

2. Solid state electronic devices by B. G. Streetman and S. K. Banerjee, 6th Ed, Pearson
Education, Inc.
https://iris.nitk.ac.in/hrms/courses/26105 2/5
12/31/2019 PH868 - Solid State Electronic Device (2020) | IRIS

3. Physics of Semiconductor Devices by S.M. Sze, Wiley, 2nd Edition.

Background material may be found in solid-state physics text books such as Kittel, and
Ashcroft-Mermin. In addition, information about different online materials may be
provided as needed.

Course content:

Approx. no of
S.No. Topic
lectures

Introduction:

Brief discussion on crystalline solids, different growth procedures  

1. (e.g., epitaxy, chemical vapor deposition, etc.), simple and
4
compound semiconductors and their applications in real life
electronic devices, brief introduction to quantum theory of solids.

Energy bands and charge carrier motion in semiconductor:

Formation of energy bands in solids, effective mass of electron

2. and hole in semiconductor, intrinsic and extrinsic materials, band 3
diagram of direct and indirect bandgap semiconductors with
examples.

Carrier concentration:

Concept of Fermi level/chemical potential, electron and hole

3. concentration in equilibrium (no, po), temperature dependence of 4
carrier concentration, Fermi level position for intrinsic and
extrinsic semiconductors, degenerate and non-degenerate
semiconductors.

Carrier transport phenomenon:

 
4. Carrier diffusion and drift currents, conductivity and mobility,
Einstein’s relation connecting carrier diffusion with mobility, Hall 3
effect.

https://iris.nitk.ac.in/hrms/courses/26105 3/5
12/31/2019 PH868 - Solid State Electronic Device (2020) | IRIS

5. p-n junction: 5

Basic structure of a p-n junction, fabrication of p-n junction—

brief idea about lithographic techniques, built-in potential barrier
and space charge width in zero applied bias condition, qualitative
discussion of current flow in junction in forward and reverse bias
condition, reverse bias breakdown – zener and avalanche
breakdown, diode equation, tunnel diode.

Metal-semiconductor and semiconductor heterojunction:

Schottky barrier diode – band diagram (qualitative), junction

properties.
6. 4
Metal-semiconductor ohmic contacts – band diagram.
Heterojunction – energy band diagram, concept of 2-dimesional
electron gas (2DEG) system.

Metal-oxide-semiconductor field effect transistor (MOSFET):

Output and transfer characteristics, Mobility models, Short
Channel MOSFET I-V characteristics, threshold voltage control,
7. 5
substrate bias effect, subthreshold characteristics, MOSFET
scaling issues, DIBL, Short Channel Effect and gate induced
Drain Leakage

Optoelectronic devices: Photodiodes, Solar Cells, LEDs, Laser

8. 6
Diodes.

Spin based devices:

Limitation of charge based CMOS electronics, importance of

exploration of spin degree of freedom of charge carriers in
semiconductors, concept of Datta-Das spin-field-effect-transistor
9. (spinFET) and recent experimental efforts to realize it, different 8
types of spin-orbit interaction (SOI) – Rashba and Dresselhaus
SOI (qualitative details), use of SOI in realization of Datta-Das
spinFET or its variants. Brief discussion on graphene spintronics
(qualitative).

TOTAL 42

https://iris.nitk.ac.in/hrms/courses/26105 4/5
12/31/2019 PH868 - Solid State Electronic Device (2020) | IRIS

Evaluation Scheme:

S.No. Evaluation Component Weightage (%)

1. Quizzes ( 2) 20%

2. Assignments / Seminars / Surprise Tests 10%

3. Mid-Semester Exam 30%

4. Final Examination 40%

Prof. M.N. Satyanarayan

Instructor, PH868

Faculties:

Satyanarayan Nagarajan

 Server: # N1

https://iris.nitk.ac.in/hrms/courses/26105 5/5