AP60T03GH/J

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 30V

▼ Low Gate Charge RDS(ON) 12mΩ
▼ Fast Switching ID 45A
G
▼ RoHS Compliant
S

Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, GD
S TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GJ)
G
are available for low-profile applications. D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 45 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 32 A
1
IDM Pulsed Drain Current 120 A
PD@TC=25℃ Total Power Dissipation 44 W
Linear Derating Factor 0.3 W/℃
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data and specifications subject to change without notice 1

200810135

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AP60T03GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 12 mΩ
VGS=4.5V, ID=15A - - 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
2
gfs Forward Transconductance VDS=10V, ID=10A - 25 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
2
Qg Total Gate Charge ID=20A - 12 20 nC
Qgs Gate-Source Charge VDS=20V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC
Qoss Output Charge VDD=15V,VGS=0V - 10 16 nC
2
td(on) Turn-on Delay Time VDS=15V - 9 - ns
tr Rise Time ID=20A - 58 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tf Fall Time RD=0.75Ω - 6 - ns
Ciss Input Capacitance VGS=0V - 1135 1820 pF
Coss Output Capacitance VDS=25V - 200 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF
Rg Gate Resistance f=1.0MHz - 1.4 2.1 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=20A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

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 AP60T03GH/J

125 90

o
T C =25 C T C =175 o C 10V
10V 8.0V
100
8.0V

ID , Drain Current (A)

ID , Drain Current (A)

60
6.0V 6.0V
75

5.0V
50 5.0V
30

V G =4.0V
25 V G =4.0V

0 0
0 1 2 3 4 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

80 2

I D =15A I D =20A
T C =25 ℃ V G =10V
60 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

40 1.2

20 0.8

0 0.4
2 4 6 8 10 -50 25 100 175

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.8

2.3

10

1.8
VGS(th) (V)
IS(A)

T j =175 o C T j =25 o C

1.3

0.8

0.1 0.3
0 0.5 1 1.5 -50 25 100 175

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP60T03GH/J

12 10000
f=1.0MHz

I D =20A
VGS , Gate to Source Voltage (V)

9 V DS =10V
V DS =15V
V DS =20V

C (pF)
6 1000 C iss

C oss
C rss

0 100
0 6 12 18 24 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

Duty factor = 0.5

100 0.2
ID (A)

100us 0.1

0.1
0.05

PDM

10 1ms 0.02
t
0.01
T
o
T C =25 C 10ms Single Pulse
Duty Factor = t/T

Single Pulse 100ms Peak Tj = PDM x Rthjc + T C

DC
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Part Number
Package Code
meet Rohs requirement
60T03GH
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-251

D Millimeters
A SYMBOLS
c1 MIN NOM MAX
D1 A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
E1 E
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
A1
E 6.70 7.00 7.30
B2
E1 5.40 5.80 6.20
F e ---- 2.30 ----
B1
F 5.88 6.84 7.80

1.All Dimensions Are in Millimeters.

c 2.Dimension Does Not Include Mold Protrusions.

e e

Part Marking Information & Packing : TO-251

Part Number meet Rohs requirement

for low voltage MOSFET only
60T03GJ Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence

Free Datasheet http://www.datasheet4u.com/