www .DataSheet.in IRFZ44/45 N-CHANNEL IRFZ40/42 POWER MOSFETS FEATURES fe '* Lower Ros (ony * Improved inductive ruggedness * Fast switching times + Rugged polysilicon gate cell structure A ‘+ Lower input capacitance Lp * Extended safe operating area * Improved high temperature reliability | IREZ4ANREZAS L IREZAOMREE A PRODUCT SUMMARY Part Number | Vos | foster) | IRFZ44 | GOV 0.0280 354 IRFzZ45 || GOV 0.0350, 365A ie Je rez | sov | ooze | asa eza2_ | sov | 003s | 35a * Current ited by wie & pn diameter MAXIMUM RATINGS [ Characteristic Symbol | iRFZaa | WAFZes | RFA | IRFZAR_| Unit Deans Souce Voltage (1) Voss 60 | 0. de Oran-Gate Voltage (Ros = OMT) 60 50 ve Gato-Source Voltage 220 j vae_| ‘Conbayous Oran Curent Te=25°C 36 36 a8 [38 | Ade. ‘Contnuous Dran Curent To= 100°C 35 33 as__| a3 | ade Dram Currnt—Pulsed (9) 210] 190 | 210 | 190 Ade ‘Gato Curent—Pused a6 [cade ‘Single Pulsed Avalanche Eneroy (4) 53 md Avalanche Current 38 A Total Power Dissinaton at T 150 Wats _Derato above 25°C o 12 wee Oporatng and Storage z ; Junction Temperature Range Ta Tsta OG oat ‘Maxmum Lead Temp. for Solgenng : Purposes, 1/8" from case for 5 seconds | ao oi Notes: (1) T)=25°C to 175°C (2) Pulse test. Pulse widtn<300ps, Duty Cycles 296 {G) Repettve rating: Pulse with kmited by max junction temperature (4) L=50yH, Vog=25V, Fg=250, Starting Ty=25°Cwww .DataSheet.in IRFZ44/45 N-CHANNEL IRFZ40/42 POWER MOSFETS ELECTRICAL CHARACTERISTICS (1-=25°C uniess otherwise specified) [Symbol Characteristic min | Typ | Max [Units] ‘Test Conditions Tran Source Breakdown Votogs |_| WassOV, b= 2504 Boss | IRFZ44/45 co }-|-|v IREZAOM2 so|—|— | Ves | Gate Threshold Voltage 20 Vos=Ves. lo=250A toss | Gate-Souce Leakage Forward | — Ves=20V | toss | Gate-Souce Leakage Reverse | — Vog=—20V \Vos=Max. Rating Vas=0V Vos0 8Max. Rating, Vo Yost 2V Vas=10V loss | Zero Gate Voltage Drain Curent | — [ton | Onsine oaSouce Curent i] 6 Static Drain-Source IRFZ4a/40| — On-State Resistance IRFZ45/42) — ‘Os | Forward Transconductance (2) Ces_| Input Capacitance utbut Capacitance Cre [Reverse Transfer Gapactance | — |360| — | oF [taxon | Tum-On Detay Time = 22 | ns te | Rise Tme [210 | taomn_| Turn-Off Delay Time Posen Vos=10V, lb=33A [Vos®5ov, o=33A Vos"0V | veorasv 0.5 BVoss, |= | 210 | 98 | (MOSFET switching tmes are essentially — | 76 | ne | independent of operatng temperature) = [= fi30 | as [Fal Tine Total Gato Gharge eo {Gate-Source Pulse Gate-Drain) | sles Vas=10V, lp=52A, Vps=0.8Max Rating [Nose nsesres cae Far Tre Gate charge 1s essentiay mdepencent of = ‘operating temperature ) Ose [Gate-Dran "Miter Charge | — | — | 88 | nO) THERMAL RESISTANCE [Rave | JunctonteCase Max [ew Pcs | Caseto-Snk YP 05 | KW | Mounting eurfaco fat Riva | Junction-to-Ambent MAX eo | Kw] 35°C to 175°C (2) Pubse test Pulse wicth<300us, Duty Cycle<2% (3) Repetitive rang Puso width imted by max juncton temperature ‘ELECTRONICSwww .DataSheet.in IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Win] Typ | Max [Unie Teat Conditions | Is Continuous Source wrrzaaiao] — | — | 38 ‘A | Modified MOSFET | Corem teoey Doe) inrzasiaa| — | — | 38 | A | etourl reverse lw | Pulse-Source Curent 1RFZ44;40) — | — | 210 | a | PN unchon rectter @ inezd5ia2 (20 | | Veo | lode Forward Voltage Al 2s|v 5°C, Ig= 5A, Vase OV | ta Revere Recovery Tene = [= Taso [as | 728%. 5A, alarm 10088 Notes: (1) T)=25°C to 175°C (2) Pulse test Pulse width<300us, Duty Cycles 2% (3) Repetitive ratng Pusse wth iimted by max juncton temperature arto] pepe [_ehectairom T _ Z —T | yo [LTT ia — {| i 4 : =! i IE Wo Sod] fa 7 Lh tee | | * Cy 7 18 2 = 7 a 1 - eo, ORANTO-SOURCE VOLTAGE WOLTS) es aarbrosounes vouTaaeWouTm Tyla Supa Ghats jet Tanai’ Chaconces "Tareas | [ al es lerzeasol Ht = Po i Fae sel ceiae ell im) 3 i Led i. 5 Je Tt 4y _ ft | ot ® I 20 s 3.10 = 10F S10 Ves, OAMTOSOUNCE VOLTAGE VOLTS) os, RARETOSOURCE VOLTAGE OATS) ‘pleat Saturavon Characteristics ‘Maximum Ste Opecating Area a” ELECTRONICSwww .DataSheet.in IRFZ44/45 N-CHANNEL IRFZ40/42 POWER MOSFETS LSNOLE PULSE |TRANGIENT. it "SQUARE wae Pulse Oyo SECONDS) Maximum EHectiveTranslnt Thermal impedence Junction to-case Vs. Pulse Duration PE ; — : i eT | ' i I : 3 : 3 a i a i i : : é i dane | rr o os Te aaa a o “yptcal raceme ene current ‘ype Souresbrarn Diode Forward Voge Bol ted t i { BZ # z 3 i foe TH Eon fod | i 1ST “ sesidown VoRage Ve. Temperature : Normalized ca an . ELECTRONICS:www .DataSheet.in IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS ES ——| tonanerosounce votrAge ours) ‘Typical Capacitance Vs Oran to Source Voltage ‘Typical Gate Charge Vs. GaterTeSource Voltage tba cuRRENT AMPERES) ta, ORAM CURRENT AMPERES) ‘Typical On-Ronstance Vs. brain Curent Po POWER DISSIPATION (WATTS) ‘Power Vs. Temperature Darang Curve Masioun Bian Curent Va" Cave Tomperture a” ELECTRONICS 419