TOSHIBA 25)438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L?--MOSV) 283438 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS aft fn roma DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS oso2 , $32202 27292 © 4V Gate Drive * Low Drain-Source ON Resistance: Rpg (ON)=0.160 (Typ.) High Forward Transfer Admittance : [Yfel=4.08 (Typ.) 60V) ¢ Enhancement-Mode : Vth = —0.8~2.0V (Vpg= —10V, Ip=—1mA) © Low Leakage Current : Ipgg= 100A (Max.) (Vpg MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC sympo. | RATING | UNIT [Drain-Source Voltage Vs. =60 Vv 1 Drain-Gate Voltage R@g=20kM) | Vpor. =60 Vv. 1 care s @ Gate-Souree Voltage Vass £20 Vv. 2. DRAIN f DC Ip =5 a 3._ SOURCE Drain Current Pats [Ibe > 4 Irapeo = Drain Power Dissipation (Te=25°0) | Pp 25 W_Ieraz 30-67 Single Pulse Avalanche Energy | Eas. 273 ind ‘Avalanche Current TAR =5 [A | OSHIBA 210818 Repetitive Avalanche Energy* EAR 2 my_| Weight: 1.95 (Channel Temperature Toh 150 °C Storage Temperature Range Tog =55~150 | °C THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL |MAX.| UNIT [Thermal Resistance, Channel to Case Rihche) | 6.0 [CW [Thermal Resistance, Channel to Ambient | Reh ch-a)| 625 [°C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=25V, Starting Teh =25°C, L=14.84mH, Rg=250, TaR=—5A This transistor is an electrostatic sensitive device. Please handle with caution. sc1003 OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species Sperntnsanae eft len tare rods Speci. Abs Baba Yaep mind te precovions and nde ons the © CBhetieRn ft ry inargenens of checual Proper arcu’ okt tte repute, wach iho a. ee i subject to change without nonce oe stmonducterRelsbiy Harabook raion contain etek pesetied only ab a gude for the applcations of our products No reponsbily 1 agumed by, TOSHIBA © He'intormaton conttved he 7998-10-30 1/5TOSHIBA 25)438 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. | TYP. |MAX./UNIT| (Gate Leakage Current Tass _|Vas==16V, Vpg=0V = E10] eA Drain Cut-off Current Ipss__|Vps=—60V, Vas=0V = = [1007 a Drain-Source Breakdown - _ Voltage 'V pr) Dss|Ip=—10mA, Vag=0V 60 —|v Gate Threshold Voltage Vin Ima =08| — | -20| V : =25A — [024 | 0.28 Drain-Source ON Resistance |RDS (ON) eT Tons! 2 Forward Transfer rainittanes Wed -2.5A 20| 40] — | s Tnput Capacitance Gi =| 630 — Reverse Transfer Vps=-10V, Vas= Capacitance Crs |p=1Mitz — | 8] = | (Output Capacitance Coss = | 200, — Rise Time tr Ip=-268 | — | 95) — Vos Vf Vout SiovLl Switching [Tum-on Time | ton — — | 45) — Time © 120 ns Fall Time te 4 — | 55) — Vpp=-30v Turn-off Time | tor — | 200) — [Total Gate Charge (Gate- Q 2 Source Plus Gate-Drain) al -10v, = 71 ic (Gate-Source Charge Qes = | iy — |" Gate-Drain (“Miller”) Charge | Qua = ef — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. | TYP. |MAX. | UNIT Continuous Drain Reverse Toe _ —|—]ola Pulse Drain Reverse Current | _IDRP = =| — [-2%] a Diode Forward Voltage = [= [arty Reverse Recovery Time — [30 | — [as [Reverse Recovery Charge = [or [= |x MARKING x, rypp & Lot Number fe [Month (Starting from Alphabet A) UY Year (Last Number of the Chrietian Era) 7998-10-30 2/5TOSHIBA DRAIN CURRENT Ip a FonWARD TRAGER ADMITTANCE -10 ti std 081d 1B 0 DRAINSOURCE VOLTAGE Vng (V) Ip ~ Vos [coumon source vps —10¥ tem -s6fff 100. yA GATR-SOURCE VOLTAGE Vos W) 0 sl — I [counox source at DRAIN CURRENT Ip «) 25)438 1p - Vos ‘COMMON SOURCE lree2s DRAIN CURRENT Ip) « BO DRAIN-SOURCE VOLTAGE Vps (W) Vos ~ Vas ‘oMMON SOURCE] Te=25C 2 ; i g d 70 CATESOUNCE VOLTAGE Ves «) , Rps(ox) - 1p cg __ Joossion source fe & Fo Sor 08 = =80 DRAIN CURRENT Ip (A) 7998-10-30 3/5TOSHIBA Rpg on) ~ Te os DSCON) DRAIN SOURCE ON RESISTANCE. rit LK oo 060 ‘CASE TEMPERATURE Te C0) CAPACITANCE ~ Vs s000 So Eg 5 06] vos-0v ol a a DRAIN SOURCE VOLTAGE. Vos «) Pp - Te z za A 3 2 = oes a0 (CASE TEMPERATURE Te CC) [DRAIN REVERSE CURRENT tpg GATE THRESHOLD VOLTAGE Vu, «) g i i i 25)438 Ip - Vos [common source ios, 1 ad DRAINSOURCE VOLTAGE Vg «W) Vth - Te ‘COMMON SOURCE i Vps=—10¥ i oa ia 100 CASE TENPERATURE Te ¢) DYNAMIC INPUT/ OUTPUT CHARACTERISTICS. ‘COMMON SOURCE GATE-SOURCE VOLTAGE Ves a «a a TOTALGATE CHARGE Qy 00) 7998-10-30 4/5TOSHIBA a0 NORMALIZED TRANSIENT THERMAL THPEDANCE nunca Ranh, nth = tw. 25)438 oon ae 100 ie 10m 100 T 70 Puss WOT te SAFE OPERATING AREA Eas - Tech 9 1p MAX. (PULSED) TTT ome 3 swell a SENS NSE El j fl 10m = 200] De OPERATION z al PS eae Seager TT svpss atesotnce okt fs 0 LU ow Ue Pesk TAR= ‘Ypp=~25V, L=14.84mHt mete wen Bypss 1 iypss- Yo 5A, RG=250 pa 7998-10-30 5/5