TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L?--MOSV) 2$K2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS. © 4V Gate Drive © Low Drain-Source ON Resistance: Rpg (ON)=18m0 (Typ.) ¢ High Forward Transfer Admittance : [Yf|=408 (Typ.) Low Leakage Current : Ipgg=100/:A (Max.) (Vpg=60V) ¢ Enhancement-Mode — : Vih=0.8~2.0V (Vpg=10V, Ip=ImA) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC symgoL | RATING | UNIT Drain-Source Voltage Vss 00 Vv 5 Drain-Gate Voltage (Rqg=20k) | VpaR. 60 Vv Gate-Source Voltage Vass £20 V. 1. Gare DC 1p 5 A 2. DRAIN Drain Current Puls [Ibe a0 = 3._ SOURCE Drain Power Dissipation (Te=25°0) | Pp 5 w__||seDEC = ‘Single Pulse Avalanche Energy | Eas. 701 mJ_|| BIAS SC-67 ‘Avalanche Current TAR 45 A_||vosmmpa 2.10818 Repetitive Avalanche Energy* EAR 45) mJ_| Weight : 195 Channel Temperature Toh 150 °C ‘Storage Temperature Range Tote =55~150 | °C ‘THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL |MAX.| UNIT [Thermal Resistance, Channel to Case Ren he | 278 [OW [Thermal Resistance, Channel to Ambient | Reh (ch-a)| 625 [°C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. “* Vpp=25V, Starting Teh =26°C, L=471H, RG=250, IaR=45A This transistor is an electrostatic sensitive device. Please handle with caution. sc1003 OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species Sperntnsanae eft len tare rods Speci. Abs Baba Yaep mind te precovions and nde ons the eine stmonducterRelsbiy Harabook CORPORATION for any rngements Cf ntl propery or ether cht gf te ed pos ich may rena orm Huse. Ro Heese’ granted i subject to change without nonce oe © He'intormaton conttved he 1998-11-12 15TOSHIBA 2SK2312 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. | TYP. | MAX.| UNIT (Gate Leakage Current Tass | Vas==16V, Vpg=0v = [= [ei ek Drain Cut-off Current Tpss__|Vps=60V, Vag=0V = [| — | 100[ A Drain-Source Breakdown Voltage \V (BR) DSS mA, Vgg=0V 60 _ _ v Gate Threshold Voltage Vin (OV, Ip: os | — | 20| V Ves=4V, Ip=25A — [19] 25 Drain-Source ON Resistance [Rpg qn) -/ES=4¥-1D=26: 9 | 25) no Vos=10V, Ip = [as] a7 Forward Transfer ‘Admittance Weel Vps=10V, Ip=25A, 28 40) — s Input Capacitance Ciss —_[ 3350] — Reverse Transfer 10V, Vgg=0V Capacitance Cras MHz — 550] — pr (Output Capacitance Coss = [eo — Rise Time tr 10V = 25 | — VGS oy ‘Tum-on Time — | 5] — Switching ‘on g "Time “ ns Fall Time i — | o] — Vpp=30V Vin : tr, te<5ns Tumoft Time! tom — | Duy = tar te tOz8 — | 180] — [Total Gate Charge (Gate- @ — Tal — ‘Source Plus Gate-Drain) . Vpp=48V, Vgg=10V (Gate-Source Charge Qes [Ip =45A = [mp — | Gate-Drain (“Miller”) Charge | Qga = [T= SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION Continuous Drain Reverse IpR _ = - 45) A Pulse Drain Reverse Current | _IDRP = — |= | 180 a Diode Forward Voltage VpsF _[ipR=45A, Vag=0V == ev Reverse Recovery Time ter TpR=45A, Vqg=0V = | 220 [= [as Reverse Recovery Charge Qi [lp /dt=50A/ us = oz, — [sc MARKING (TYPE 1 2% Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era) T998-11-12_2/5TOSHIBA Ip - Vos “COMON enaee 19 5 i Voom 28¥ a ) DRAINSOURCE VOLTAGE Vng (V) 1 - Vos sod) COMWON Vps=10¥ ees. % ot GATESOURCE VOLTAGE Vos > Nal — 5 g é a2 2 8 z g ts 3 To DRAIN CURRENT Ip «) DRAD-SOURCE VOLTAGE Vps « DRAIN CURRENT Ip) « DRAIN SOURCE ON RESISTANCE Tmps(on) (ai) 2SK2312 1p - Vos ‘COMMON Tenaee |) DRAIN-SOURCE VOLTAGE Vps (W) Vps ~ Vas COMMON SOURCE 2 ee ae GATE-SOURCE VOLTAGE Ves () Rps(on) ~ Ip ‘COMMON SOURCE Tents ar 380 Io DRAIN CURRENT Ip (A) 1998-11-12 3/5TOSHIBA 2SK2312 a ps (0%) ~ Te Ipp - Vos comnox : 3 | sooner a ss i 8 8 5 a a : + z Sounce I se CASE TEMPERATURE. Te co) DRANNSOURCE VOLTAGE. Vos «) CAPACITANCE — vg Vin - Te 0 > g spin ™ s reer F cod 5 é 3 So ic i Sago) Sounce eo 5 | 3a 7 Tao DRAINSOURCE VOLTAGE. pg.) CASE TEMPERATURE Te C0) DyNaMe iNpuT/outeuT 0 Pp ~ Te CHARACTERISTICS z = € & & a, o 8 i Bob \ eae Kin-uv 0 Sal g g g 5 of i z a K Yas, g = } s a 4“ 0 ie a a (CASE TEMPERATURE Te CC) TOTALGATE CHARGE Qy 00) 1998-11-12 4/5TOSHIBA : \ rh — tw goon 23 oa HEH 2 ons . Fe Scie euse {{f if ett) | Fe om = a a PULSE WIDTH ty TL Babich <)™2.78C/ 8 2SK2312 70 SAFE OPERATING AREA Eas - Teh me 1 sofa sn i “ 3 oc oma Sag 4m ceoeratare lng MAX. CHANNEL TEMPERATURE Th, 0) OTANNSOOREYOLNAGE Ys vps BV anf -16v / oth Yoo // ‘TEST CIRCUIT Peak TAR=45A, RG=250 pa Vpp=25, L=aiat WAVE FORM Bypss TP Gpes— Vn 1998-11-12 5/5