baer tlo( aah Comprehensive Course on Electronic Devices PN Junction Diode and Special Diodes - Part X eee Reece nt)Oe Gallium Arsenide (GaAS) is doped with silicon such that the silicon atoms occupy Gallium and Arsenic sites in the GaAs Crystal. Which one of the following statements in true? wey Silicon atoms act as P-type dopants in Arsenic sites and n-type dopants in Gallium sites. (B) Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites. (C) Si atoms act as p-type dopants in Arsenic as well as Gallium sites. (D) Si atoms act as n-type dopants in Arsenic as well as Gallium sites.AA semiconductor is irradiated with light such that carriers are_uniformly generated throughout its volume. The semiconductor is n-type with per cm’, If the excess electron concentration in the steady state id An=10'*per cm?and if r, =10ssec [minority carrier life time] the generation rate due to irradiation os 10°e—h pair/em’ /s (b) is 10“e-h pair/cm’ /s (c) is 10°e~h pair/cm’ /s (d) cannot be determined as the given data is insufficient Dn = Apa solS wy> Gove AP = To = 1)? e-hpairfedtn Up loxtg& —Q. AA P - N junction in series with a 100 ohms resistor, is forward biased so that a current of 100 mA flows. If the voltage across this combination is instantaneously reversed to 10 V at t = 0, the reverse current that flows through the diode at t = 0 is approximately given by (a) OMA oF 100 MA (c) 200 mA (d) 50 mA Soh TT Lory +" Lo0ama “K+ < tc 2100sv& “es in ym eet ih te nig mi 4x 10" em (A) Silicon atoms (B) Holes \weF Beam atoms (D) Valence electrons “sien rere = 20x,,7? valu w Tepe * 2 atoms /(y93 2 Las? N=tybe $ n>n P< Bl Hols > P= De ; ° P< boxe! a © PPYD nie dabingKran of Gallium Arsenide (GaAS) is doped with silicon such that the silicon atoms occupy Gallium and Arsenic sites in the GaAs Crystal. Which one of the following statements in true? (A) Silicon atoms act as P-type dopants in Arsenic sites and n-type dopants in Gallium sites. (B) Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites. (C) Si atoms act as p-type dopants in Arsenic as well as Gallium sites. (D) Si atoms act as n-type dopants in Arsenic as well as Gallium sites.G-2920 — Consider the recombination process via_bulk traps. in a forward biased \? pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-sections are equal, which one of the following is FALSE? With all other parameters unchanged, Umax decreases if the intrinsic carrier density is reduced. WY, Umax f Ura Occurs at the edges of the depletion region in the device. Unax depends exponentially on the applied bi HA (A With all other parameters unchanged, Unas increases ifthe thermal velocity of the 7” carriers increases. @ minerity cad Sof Ee a OMe E Topping [tfe ting Uz _aj* Ey majority) (life fas)ony Read - Hod Recombination rote by bk teapp rs im as > — a cn Co Ne Gatm-%7 al + Co [n+ Nie Et -Ei) her Cp Pat Nie e 4p: aero no of eyCar Ucctrn Cophse Cross - Sed) Cpa Holes Caphar CSS - Sachi) Nas ers Energy Jevela Cnantroting) Ex, > Trapping Energy level -© ||[o Pao = Palo) - Pies = Ve = froe Meg i =0 X, Ve Xp X=0 9 Py? - Prole “Nr 1) Yates = noes) vat unFB aa accurvin d : Viz -2.5mv/* peo a @ == . G . sii junctic with a aT ‘i 6 peers) Vie iq the temperature is increased by OC, )the forward bias voltage across the PN Junéaion © < (GATE -11) : | (a) Inoreases by 60 mV @ do Mointayy oonch (b) Decreases by 60 mV (0) Increases by 25mV OMe » > Np) > P= Na-N5 a= Cer Ny) Vp ~ Gani ap ae Re: = ay SR, = re a agpL tenet cone Connon Daa Fr 2130 SS ain cb dap rt pin co 5 > opag sires Z dts g dx Du acne eee ans nb dc ayn teh ngDrover cangee - 8. ‘ +P V5 = sv a [j= c 7 Vj Trem open Ct valet! Hane * R-B Case. Vj 2Ver Vorpplied y= 0-5 +Veppliof Mop § a "Eade ne) iat Sol Voz OV Rew Ves Vat Vagphed Fg. Ves Veo \lopplicd& reversions Selorpot ‘Rete esoteric adhe oy tie gha —hp) oy ar") Pasidt § Np=0 Na -No= lo _ ial bea Aa alo N-side + Na-Np = S| Na=o . = Np=~tolt YL’ \o= oT wadVo= Vela (aXe) FY 16 or: Vo= Oorsq In [lo X to | = 0.635 Volt (es xis) ~ We |2*U-Fx B-38x1o MY «0-60 yu \ exec Te ia) N= 44.6N9 >p@ wien ver