OXIDATION

Diffusivity Vrs Temperature in Silicon

Ks = Rate constant for reaction at Si – SiO2 interface
M is the number of molecules of the oxidising species
At boundary condition X0 (t = 0) = Xi

Xi is initial thickness of oxide grown in time τ

B/A is called linear growth constant

B is called parabolic growth constant
Parabolic Rate Constant (B) Vrs Temperature for thermal oxidation of Si in
pyrogenic H2O and dry O2
Linear Rate Constant (B/A) Vrs Temperature for thermal oxidation of Si in
pyrogenic H2O and dry O2
Wet and dry silicon di oxide growth on <100> Si
Wet and dry silicon di oxide growth on <111> Si
Oxide growth at increased pressure
Colour Chart
Result of SUPREM simulation of oxide growth on boron depth silicon