BJT

BIPOLAR JUNCTION TRANSISTOR

CONSTRUCTION

NPN TRANSISTOR

PNP TRANSISTOR

STRUCTURES AND SYMBOLS

OPERATION
EMITTER BASE BIAS
COLLECTOR BASE BIAS
BIASED PNP TRANSISTOR
LEAKAGE CURRENT
EMITTER CURRENT
COLLECTOR CURRENT
CHARACTERISTICS
INPUT PARAMETERS
OUTPUT PARAMETERS
TRANSISTOR CONNECTIONS
COMMON BASE CONNECTION
COMMON BASE NPN TRANSISTOR
CB CIRCUIT ARRANGEMENT
COMMON BASE CONNECTION
CURRENT AMPLIFICATION FACTOR ALPHA
EXPRESSION FOR COLLECTOR CUREENT IC
COLLECTOR CURRENT
COMMON EMITTER CONNECTION
BASE CURRENT AMPLIFICATION FACTOR BETA
RELATION BETWEEN ALPHA AND BETA
EXPRESSION FOR COLLECTOR CURRENT IC
SIGNIFICANCE OF BETA
COMMON COLLECTOR CONNECTION
CURRENT AMPLIFICATION FACTOR GAMA
RELATION BETWEEN GAMA AND ALPHA
RELATION BETWEEN GAMA AND BETA
EXPRESSION FOR COLLECTOR CURRENT IC
LEAKAGE CURRENT IN TRANSISTOR
TRANSISTOR HEAT
AMBIENT TEMP INCREASES
LEAKAGE CURRENT INCREASES
IC INCREASES
HEAT OF TRANSISTOR INCREASES
REGENERATIVE DESTRUCTIVE PROCESS OF BJT
PROCESS. TO AVOID THERMAL RUNAWAY
SELF BIASING OF TRANSISTOR
AMBIENT TEMPERATURE INCREASES
ICO INCREASES
VE WILL INCREASE
IB DECREASES
INCREASE IN IC
NEED OF BIASING
CONCLUSION
BIASING
OPERATING POINT
QUIESCENT POINT
STABILITY FACTOR S
FIXED BIAS CONFIGURATION