9 Diode and Transistor Designer’s Catalog 19Re = HEWLETT po PACKARD COMPONENTS1980 Diode and Transistor Designer’s Catalog Table of Contents Ordering INformation 1.0.2... cece cece e cece eect teen eee v INUITIONC INKS vii Microwave Gallium Arsenide Field Effect Transistors .......... A SIIGOR BISOIGE TOISISTOS! 5 as sae sis eet eens eee eee 23 Schottky Barrier and High Conductance Diodes ........... 77 PIN Oibdes ay ene ioe ads Ce scree lve eee crue 123 IMPATT and Step Recovery Diodes 151 Devices for Hybrid Integrated Circuits .......-e eee eee ee eee 171 High Reliability Tested Products .......-.6+-2seee eee eee 217 infegtated Produciss (or. 1 i, ews ee ae 233 PODONODG Coie Shine Kees ws ces tewn sae es seen Ke Package Outlines Design Aids ... Abstracts of Application Notes . Abstracts of Application Bulletins Stocking Distributors .... Sales and Service Offices Profile and Inquiry Card . 257A Hewlett-Packard is one of the world’s B rief leading designers and manufacturers single contact with the company. Hewlett-Packard is guided by a set of electronic, medical, anaiytical, ‘of written objectives. One of ‘and computing instruments and et¢ these is “fo provide products and systems, diodes, transistors, integrated products, and optoelectronic products. Since its founding in Palo Alto, California, in 1939, HP has done its best to offer only products that represent significant technological advancements. To maintain its leadership in instrument and component technology, Hewlett-Packard invests heavily in new product development. Research and development expenditures ‘traditionally average about 10 percent of sles revenue, and 1,500 engineers and scientists are assigned the responsibilities of carrying out the company’s various R and D Projects, HP produces more than 3,500 products at 30 domestic divisions in Califomia, Colorado, ‘Oregon, Idaho, Massachusetts, New Jersey ‘and Pennsylvania and at overseas plants located in the German Federal Republic, Scotland, France, Japan, Singapore, Malaysia and Brazil However, for the customer, Hewlett-Packard is no further away than the nearest telephone. Hewlett-Packard currently has sales and service offices located around the world. These field offices are staffed by trained engineers, each of whom has the primary responsibility of providing technical assis- tance and data to customers. A vast communications network has been established to link each field office with the factories and with corporate offices. 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Among these are: © Electronic Instruments and Systems for Measurement/Computation (General Catalog) * DC Power Supply Catalog * Medical Instrumentation Catalog Analytical Instruments for Chemistry Catalog © Coax, and W/G Measurement Accessories Catalog © Optoelectronics Designer's Catalog @ Integrated Products Catalog All catalogs are available at no charge from your local HP sales office, or write: Inquiries Mgr. Hewlett-Packard, 1507 Page Mill Road, Palo Alto, CA 94304.RF and Hewitt-Packard has Microwave fon implantation, new new 180,000 and wet soot Semiconductors .:::: manufacturing systems, and plant in San Jose, California. It houses modern scanning electron microscopy provide the equipment such as a computer controlled basis for quality and dependability for the wafer fabrication facility which includes entire product line. projection mask aligning and automation handling systems.About This Diode and Transistor Designer's Catalog contains detailed and This How To Use This Catalog Three methods are incorporated for up-to-date specifications of our S$} t I locating components: comple tn of fF ana ataio microwave products. The catalog is divided into 8 product sections: Silicon Bipolar Transistors, Gallium arsenide Field Effect Transistors, Schottky Barrier and High ‘Conductance Diodes, PIN Diodes, IMPATIS and Step Recovery Diodes, Devices for Hybrid Integrated Circuits and High Reliability Devices. At the end of each section, a selection of application notes pertaining to the use of those products is included. Aso included in each section where possible are the equivalent circuits of each product. These will be of use in the computer-aided design circuits. Al chip, beam lead, LID and ministrip Products are in the section Devices for Hybrid Integrated Circuits, and in general, contain references to equivalent packaged parts In alll of the transistor product data sheets, two tables for maximum ratings are shown. Recommended Maximum Continuous Oper- ating Conditions indicate the conditions within which the device should be operated in order to meet the MTBF design goals for the device. The Absolute Maximum Ratings table indicates the limits of the device. Operation in excess of any of these conditions may result in permanent damage to the device. Package outlines are included in the Appendix. Also included are some commonly used Engineering tables The catalog also provides a complete index cof microwave semiconductor application Notes on page 250 which are available from any of the Franchised Distributors listed on page 255. © A table of contents that allows you to locate devices by their general description. © An alphanumeric index that lists all devices by part number plus generic chip part numbers. @ Selection guides at the beginning of each product section generally grouping Products by major specification, fre- quency, etc. Aithough product information and illustrations | in these catalogs were current at the time it was approved for printing, Hewlett-Packard, in @ continuing effort to offer excellent products at a fair value, reserves the right to change specifications, designs, and models without notice. Other Literature Available Each HP product is completely described on a Technical Data Sheet. Technical measurement information is contained in a comprehensive series of Application Notes. Various Application Notes of interest to those working in the RF and Microwave field are referenced on page 250. The HP Journal is a monthly journal of technical information from the laboratories of HP, and is available upon request. Measurement/Computation News, published six times per year, rnay be requested if you want announcements of new products.Ordering Information, How To Order Hewlett-Packard people at the field office will be pleased to provide assistance in selecting the HP prepare your order. The information in this catalog will, in many cases, be sufficient for you to purchase a particular HP product. in those instances, a telephone call to the HP office will provide you with (1) information on product availablity, and (2) the product's price, delivered to your location. We want to be sure the product delivered is the one you want. Therefore, when placing your order, please specify the product's catalog part number, as well as the product's name. Be as complete as possible when ordering NOTE: Minimum order In USA $20, except where cosh isrecelved win order. Terms of Sale Inside the USA: Terms are net 30 days from invoice date, Unless credit with Hewlett Packard has already been established, shipments will be made COD or on receipt of ‘cash in advance. Outside the USA: Terms of orders from customers outside the United States of America which are placed with Hewiett- Packard Company, Hewlett-Packard S.A, or Hewlett-Packard Inter-Americas, are inevoc- able letters of credit or cash in advance — unless other terms have been previously After = Sale gcupment nos ops? Service arranged, Terms of orders placed with authorized Hewlett-Packard representatives or distributors are mutually determined between the customer and the representative or distributor organization. Warranty AS an expression of confidence in our products to continue meeting the high standards of reliability and performance that customers have come to expect, Hewlett- Packard Microwave Semiconductor Products carry the following warranty contained in the operating and service manual provided with the product HP’s Components ate warranted against defects in material and workmanship for a period of one year from the date of shipment. HP will repair or, at its option, replace ‘Components that prove to be defective in material or workmanship under proper use during the warranty period. This warranty extends only to HP customers. No other warranties are expressed or implied. HP specifically disclaims the implied warranties of merchantability and fitness for a particular purpose. EXCLUSIVE REMEDIES The remedies provided herein are buyer's sole and exclusive remedies. HP shall not be liable for any direct. indirect, special, incidental, or consequential damages, whether based on Contract tort or any other legal theory.Certification Some customers are especially interested in the test and quality assurance programs that HP applies fo its products. These Hewlett- Packard programs are documented in a Certificate of Conformance which is available upon request at the time of Purchase. This certification states: We certify that the Microwave Semiconductor Division devices listed below were duly tested and inspected prior to shipment and that they met all of the published specifications for these devices. Hewlett-Packard's calibration measurements are traceable to the National Bureau of Standards to the extent allowed by the Bureau's calibration facilities. The Hewlett-Packard Quality Program satisties the requirements of MIL-O-9858A, MiL1- 45208A, MIL-C415662A, and NASA 5300.4 (I.C.), Service We firmly believe that our obligation to you as a customer goes much beyond just the delivery of your new HP product. This philosophy is implemented by Hewlett- Packard in two basic ways: (1) by designing ‘and building excellent products with good serviceability, and (2) by backing up those products with a customer service program which can respond to your needs with speed, and completeness. The HP customer service program is one of the most important facets of our worldwide ‘operations, providing a local service capability in many of our field offices (listed on page 257). Indeed, this customer service program is one of the major factors in Hewlett-Packard’ reputation for integrity and responsibility towards its customers.Numeric index MODEL NO. HFET-1004 HFET-1404 HFET-4402 HFET-2204 HFET-2202 ‘HFET-5004 HPND-4004 HPND-4050 HPND-4165, HPND-4166 HSCH-1001 HSCH-3171 HSCH-3206 HSCH-3207 HSCH-3486 HSCH-5017 HSCH-5018 HSCH-5019 HOxTR-2004 HxtR-2101 HXTR-5404 HxTR-5402 wxTR-5103, WOXTR-5104 HxTR-6004 HXTR-610t HXTR-6102 HXTR-6103 HXTR-6104 HXTR-6105 HOXTR-6106 JAN 15741 JAN 15712 JAN 1N5719 GANT 1NS714 JANTX 1NB712 JANTX 1NS719. JANTX 1NS741 JANTXV 1N5712 ‘TXVBF-4402 ‘TxVBF-2204 ‘TXVE-4102 ‘TxvF-2204 4N4456 1N4547 4N5163 $N5t64 ANSI65, AN5166 1N8167 1NB711 1NS712 45713 $NS719 DESCRIPTION Microwave GaAs FET Chip Microwave GaAs FET (2N6680) Low Noise Microwave GaAs FET Low Nolse Microwave GaAs FET Low Noise Mictowave GaAs FET Linear Power Microwave GaAs FET Chip Beam Lead PIN Diode Beam Lead PIN Diode <.-....2..s.+ RF PIN Diode: RF PIN Diode: é Switching Schottky Diode (IN6263) Zero Bias Detector Schottky Diode Zero Bias Detector Schottky Diode Zero Bias Detector Schottky Diode Zero Bias Detector Schottky Diode Zero Bias Detector Schottky Chip Zero Blas Detector Schottky Diode Zero Bias Detector Schottky Diode ‘General Purpose Transistor Chip - General Purpose Transistor (2N6679) General Purpose Transistor Linear Power Transistor Chip Linear Power Transistor Chip Linear Power Transistor (2N6701) Linear Power Transistor Linear Power Transistor Unear Power Transistor Low Noise Transistor Chip. Low Noise Transistor (2N6617) Low Noise Transistor Low Noise Transistor (2N6618) Low Noise Transistor Low Noise Transistor Low Noise Transistor MIL-$-19800 /444 Schottky Diode... MIL-S-19500/448 Schottky Diode - MIL-S-19800/443 PIN Diode ...... MIL-S-19500 /444 Schottky Diode . MIL-S-19500 /445 Schottky Diode MIL-S-19500/443 PIN Diode ...... MIL-$-19500 /444 Schottky Diode MIL-S-19500 /448 Schottky Diode: Hi-Rel HFET-1102 Hi-Rel HFEF-2201, Hi-Rel HFET-(102 Hi-Rel HFET-2201 High Conductance Diode (5082-1001) Step Recovery Diode (5082-0253) Step Recovery Diode (5082-0113) Step Recovery Diode (5082-0114) ‘Schottky Diode (5082-2301) Schottky Diode (5082-2302) Schottky Diode (5082-2303) HV Schottky Diode (5082-2800) Schottky Diode (5082-2810) Schottky Diode (5082-2811) PIN Diode (6082-3039) GENERIC CHIP HFET1001 HFET1001 5082-0013, ‘5082-0013 ‘5082-0013 ‘HSCH-5017 HSCH-5017 LUHSCH-5017 - HxTR-2001 SUHKTR-2001 | HxrR’ 001 HXTR-5002 | ~HXTR-5001 HXTR-5002 “inxre’6001 HXTR-600t HXTR-600t HXTR-6004 HXTR-2001 HXTR-2001 - 8082-0024 ‘5082-0087 ‘5082-0012 {5082-0024 ‘5082-0087 5082-0012 5082-0024 15082-0087 5082-0018 5082-0024 | ‘5082-0087 '5082-0097 15082-0012MODEL NO. 18767 41N6263 2N6617 2N6618 2N6679 2N6680 2N6680 Tx 2N6680 TXVB. 2N6704 5082.0001 5082-0008 15082-0009 5082-0012 5082-0013 5082-0015 5082-0017 5082-0018 5082-0020 5082-0021 5082-0023 5082-0024 5082-0025 5082-0029 5082-0030 5082-0034 5082-0032 5082-0034 5082-0039 5082-0044 5082-0047 082-0049 5082-0057 5082-0058 5082-0087 5082-0090 15082-0094 5082-0097 5082-0105 5082-0112 5082-0113 5082-0114 5082-0132 5082-0154 5082-0153 5082-0180 8082-0241 5082-0243 5082-0253, 5082-0300 5082-0303 5082-0305 5082-0306 ‘5082-0307 5082-0308 5082-0309 5082-030 5082-0312 5082-0313 5082-0314 5082-0316 8082-0317 5082-0318 15082-0320 GENERIC DESCRIPTION CHI PIN Diode (6082-3080) 8082-0025 Schottky Switching Diode (HSCH-1001 Low Noise Transistor (HXTR-6101) Low Noise Transistor (HXTR-6103) General Purpose Transistor (HXTR.2101) Microwave GaAs FET (HFET!101) High Reliability 2N6680 (IXVF-110%) High Reliability 2N6680 (TXVBF-*101) Linear Power Transistor (HXTR-6101) High Speed Switch PIN Chip Step Recovery Diode Chip X-Bond Schottky Detector Chip PIN Switching Diode Chip Low Vp Mixer/Zero Bias Detector Schottky Chip Step Recovery Diode Chip Step Recovery Diode Chip Step Recovery Diode Chip Step Recovery Diode Chip Step Recovery Diode Chip X-Bond Schottky Mixer Chip High Valngo Switching Schotky Chip AGC PIN Chip KU-Band Schottky Mixer Chip PIN Switching Diode Chip Low Voltage Switch Schottky Chip Step Recovery Diode Chip VHF/UHF Switching PIN Chip AGC PIN Chip... X-Band Schottky Mixer Chip PIN Switching Diode Chip -.. Medium Power Switch PIN Chip Schottky Diode Chip Schottky Diode Chip... General Purpose Switch Schottky Chip Step Recovery Diode Chip Schottky Diode Chip General Purpose Switch Schottky Chip . Step Recovery Diode 5082-0018 Step Recovery Diode (IN4949) 8082-0015 Step Recovery Diode (1N5163) Step Recovery Diode (INS164) Stop Recovery Diode 5082-0015 Step Recovery Diode 5082-0018, Step Recovery Diode -...... 5082-0018 Step Recovery Diode s+, 5082-0032 Step Recovery Diode 5082-0032 Step Recovery Diode ee, Step Recovery Diode (1N4547) ........-.-5082-0018 Step Recovery Diode “5082-0017 Step Recovery Diode *,1-8082-0017 Slep Recovery Diode -....... ‘5082-0020 Step Recovery Diode ‘5082-0015 Step Recovery Diode -.-. {5082-0032 Step Recovery Diode ‘5082-002 Stop Recovery Diode 5082-0018 Step Recovery Diode ‘5082-0021 Stop Recovery Diode... 5082-0015 Step Recovery Diode "8082-0032 Step Recovery Diode "3082-0017 Step Recovery Diode 5082-0020 Slep Recovery Diode ‘5082-0024 Step Recovery Diode ‘5082-0008 Step Recovery Diode = 5082-0020 PAGE NO. 1258 43 25 229 229 189 190 188 189 188 190 2190 190 190 190 188 188 189 188 189 108 190 189 489 188 189 189 = 188 188 198 190 188 188 190 483 153 183 153 453 453 153 153 1153 153 183, 153 2190 190 190 190 190 153 190 190 190 190 190 190 453MODEL NO. 5082-0335 5082-0340 8082-0364 5082-0607 5082-0608 5082-0610 5082-0611 5082-0710 5082-0716 5082-0800 5082-0801 5082-0802 5082-0803 5082-0805 5082-0806 ‘5082-0807 ‘5082-0810 5082-0811 5082-0812 5082-0815 ‘5082-0820 15082-0821 15082-0822 5082-0825 ‘5082-0830 5082-0831 5082-0833, 15082-0835 5082-0836 5082-0840, 5082-0885 5082-1004 5082-1002 5082-1003 5082-1004 15082-1006 5082-2080 5082-2200, 8082-2201 5082-2202 8082-2203, 8082-2207 5082-2208 082-2209 5082-2210 5082-2229 5082-2231 5082-2233, 5082-2261 5082-2263, 5082-2264 8082-2271 5082-2272 8082-2273, 6082-2274 5082-2276 5082-2277 8082-2279 5082-2280, 5082-2285 5082-2286 5082-2287 5082-2288 GENERIC DESCRIPTION ‘CHIP Step Recovery Diode 5082-0008 Step Recovery Diode + 5082-0008 Stop Recovery Diode 5082-0017 Silicon Double Drift CW IMPATT Diode: Silicon Double Drift CW IMPATT Diode Silicon Double Drift GW IMPATT Diode Silicon Double Dri! CW IMPATT Diode Sllicon Double Drift Pulsed IMPATT Diode: Silicon Double Drif Pulsed IMPATT Diode Step Recovery Diode . Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Step Recovery Diode Stop Recovery Diode ...+....+...1++++++++5082-0090 Step Recovery Diode Siaciscss 55082-0090 Step Recovery Diode : {5082-0090 Step Recovery Diode 15082-0090 Step Recovery Diode Socseseess+ 6082-0020 Step Recovery Diode: {5082-0020 Step Recovery Diode {5082-0020 Stop Recovery Diode ..2..........++++++++ 5082-0008 Step Recovery Diode 5082-0008 Step Recovery Diode «2... {5082-0008 Step Recovery Diode {5082-0008 High Conductance Diode (1N4456) High Conductance Diode High Conductance Diode High Gonductance Diode High Conductance Diode Batch Matched 5082-2836 Schottky... 5082-0031 Hermetic Stripline Schottky Diode Matched pair of 5082-2200 Hermetic Stripline Schottky Diode Matched pair of 5082-2202 Stripline Schottky Diode Matched pair of 5082-2207 Stripline Schottky Diode Matched pair of 5082-2209 X-Band Low Vf Schottky Beam Lead Low Vp Hermetic Stripline Schottky Quad Low Vp Hermetic Stripline Schottky Quad Hermetic Stripline Schottky Ring Quad Hermetic Stripline Schottky Ring Quad Ku-Band Low Vp Schottky Beam Lead Low VF Stripline Schottky Diode Quad Low Ve Siripline Schottky Diode Quad Ku-Bond Schottky Mixer Diode 8082-0029 Matched pair of 8082-2273 ‘5082-0029 S-Band Stripline Schottky Ring Quad ‘C-Band Stripline Schottky Ring Quad Low Vp Btoadband Stripline Schottky Quad Low Vf Broadband stripline Schottky Quad X-Band Low Vr Schottky Diode: 5082-0013 Matched pair of 5082-2285 .............-. 5082-0013 X.Band Low Vr Schottky Diode ‘5082-0013 Matched pair of 5082-2287 ... 5082-0013MODEL NO. 15082-2291 8082-2292 5082-2293, 5082-2294 5082-2295 13082-2296 5082-2297 5082-2298 5082-2299 15082-2301 5082-2302 5082-2303, 5082-2305 5082-2306 5082-2308, 5082-2350 5082-2351 15082-2356 5082-2370 5082-2396 5082-2400, 5082-2401 15082-2509 5082-2510 5082-2520 15082-2521 5082-2565, 5082-2566 5082-2701 5082-2702 5082-2705 5082-2706 5082-2707 5082-2709 082-2710 5082-2711 5082-2712 8082-2713, 5082-2714 5082-2716 5082-2721 8082-2722 8082-2723 8082-2724 8082-2750 5082-2751 082-2753 5082-2754 5082-2755 8082-2765 5082-2766 5082-2767 5082-2768, 15082-2769 5082-2774 5082-2775 5082-2778 5082-2779 5082-2785, 15082-2786 5082-2787 5082-2794 5082-2795, DESCRIPTION Stripline Schottky Ring Quad Stripline Schottky Ring Quad Siripline Schottky Ring Quad Stripline Schottky Ring Quad X-Band Low VF Schottky Diode Matched pair of 5082-2295 X-Band Low Vp Schottky Diode Matched pair of 6082-2297 Ku-Band Low Vg Schottky Beam Lead Schottky Barrier Diode (1N5165) Schottky Battier Diode (1N5166) Schottky Barrier Diode (1N5167) Schottky Battier Diode Matched pair of 5082-2301 Matched pair of 5082-2303 Schottky Barrier Diode Matched pair of $082-2350 Matched Encapsulated Bridge Quad Matched pair of 5082-2303 Matched Encapsulated Ring Quad Schottky Barrier Diode Matched pair of 5082-2400 Batch Matched 5082-2709 Batch Matched 5082-2716 Schottky Barrier Diode Matched pair of 5082-2520 Schottky Barrier Diode Matched pair of 5082-2565 X-Band Schottky Mixer Diode X-Band Schottky Mixer Diode . X-Band Schottky Mixer Diode - Matched pair of 5082-2701 Matched pair of 5082-2702 X-Band Schottky Mixer Beam Lead X-Band Schottky Mixer Diode X-Band Schottky Mixer Diode Matched pair of 5082-2711 X-Band Schottky Mixer Diode Matched Pair of 5082-2713 Ku-Band Schottky Mixer Beam Lead Ku-Band Schottky Mixer Diode Matched pair of 5082-2721 Ku-Band Schottky Mixer Diode Matched pair of 5082-2723, Schottky Detector Diode Schottky Detector Diode Schottky Detector Diode Schottky Detector Diode Schottky Detector Diode 2.1.21... Low Vp Hermetic Siripline Schottky Matched pair of 5082-2765 ku-Band Schottky Mixer Beam Lead X-Band Schottky Mixer Beam Lead ku-Band Schottky Mixer Beam Lead... Low Vf Stipline Schottky Diode: Matched pair of 5082-2774 Matched pair of 5082-2768, Matched pair of 5082-2769 Low Vf Hermetic Stripline Schottky Matched pair of 5082-2785 Schottky Barrier Diode ..... Low Vp Stipline Schottky Diode: Matched pair of 5082-2794 GENERIC CHIP 5082-0013 '5082.0013 £1'5082-0013 ‘5082-0013 5082-0023 5082-0023 5082-0023 15082-0023 "8082-0023 5082-0023 {5082-0023 5082-0023 ‘5082-0023 {5082-0023 5082-0029 11'5082-0029 | 5082-0029 8082-0029 5082-0009 '5082-0009 ‘5082-0009 15082-0009...MODEL NO. 8082-2800 5082-2801 5082-2802 5082-2804 5082-2805, 5082-2810, 5082-2811 5082-2813, 8082-2814 5082-2815 8082-2817 5082-2818 5082-2824 5082-2826 6082-2830 5082-2831 5082-2835 5082-2836 8082-2837 5082-2844 5082-2845, 8082-2900 5082-2912 5082-2970 5082-2996 5082-2997 5082-3000 5082-3001 5082-3002 15082-3005 5082-3010 15082-3039 5082-3040, 5082-3041 5082-3042 5082-3043 5082-3045, 5082-3046 5082-3071 5082-3077 5082-3080 5082-3081 5082-3085 5082-2086 5082-3101 5082-3102 5082-3140, 5082-3141 5082-3168 5082-3170 5082-3188 5082-3201 5082-3202 5082-3258 5082-3259 5082-3301 5082-3302 5082-3303 5082-3304 5082-3305, 5082-3306 5082-3309 5082-3340 DESCRIPTION HV Schottky Bartier Diode (1NS711) High Voltage Switch Schottky Diode: High Vollage Switch Schottky Diode Matched pair of 5082-2800 Unconnected Matched Quad 5082-2800 Unconnected Schottky Barrier Diode (1N5712) Schottky Barrier Diode (1N5713) .. Matched Bridge Quad 5082-2811 Encap. Matched Ring Quad 5082-2811 Encop. Matched Quad 5082-2811 Unconnected Schottky Barrier Diode Matched pair of 5082-2817 Schottky Bartier Diode Batch Matched Diode 5082-2811. Monolithic Matched Schottky Diode Ring Low Vg Monolithic Matched Schottky Low Offset Schottky Diode... Batch Matched Diode 5082-2800, Schottky Diode Beam Lead. Schottky Barrier Diode: Schottky Barrier Diode Schottky Barrier Diode... Matched pair of 5082-2900 Unconnected Matched Quad 5082-2900 Unconnected Matched Ring Quad 5082-2900 Encap. Matched Bridge Quad 5082-2900 Encap. RE PIN Switching Diode RF PIN Diode RF PIN Diode : PIN Switching Diode High Speed Switch PIN Diode RF PIN Diode Stripline PIN Diode Stripling PIN Diode RF PIN Diode RF PIN Diode. High Speed Switch PIN Diode: Stripling PIN Diode Microwave Limiter PIN Diode ‘VHF/UHF PIN Switching Diode ...... HF/ VHF/UHF Curr Contr Resistor (1NS767) HE/VHF/UHF Current Controlled Resistor. AGC PIN Diode ‘AGC PIN Diode RF PIN Diode RF PIN Diode: Hormetic Stipline PIN Diode Hermetic Stripline PIN Diode ‘VHF/UHF Switching PIN Diode Hermetic Stripline PIN Diode ‘VHF/UHF Switching PIN Diode RF PIN Diode . . RE PIN Diode High Speed Switch PIN Diode PIN Switching Diode RF PIN Diode RF PIN Diode RF PIN Diode RE PIN Diode: High Speed Switch PIN Diode High Speed Switch PIN Diode PIN Switch Diode Stripline PIN Diode GENERIC CHIP - 8082-0024 ‘5082-0024 +5082-0024 ‘5082-0024 5082-0024 5082-0087 {5082-0097 5082-0097 ‘5082-0097 "5082-0097 ‘5082-0097 - 5082:0097 + 5082-0097 “5082-0031 15082-0024 “50820097 3082-0097 5082-0012, 5082-0012 5082-0012 15082-0012 ‘5082-0001 ‘5082-0012 "8082-0012 5082-0001 “5082-0001 5082-0001 "5082-0001 5082-0049 ‘5082-0001 5082-0012 ‘5082-0025 "5082-0039 5082-0025 5082-0025 5082-0012 ‘5082-0012 ‘5082-0012 ‘5082-0001 15082-0034 15082-0030 5082-0034 ‘5082-0012 ‘5082-0012 "5082-0001 5082-0012 '5082-0030 ‘5082-0030 5082-0030 '5082-0030 ‘5082-0001 ‘5082-0001 ‘5082-0030 ‘5082-0030 125 189 134 134 2425 425 125 189 189 129 129 134 134 125 134 128 129 429 189 189 129 129 129 29 129 129 189 134GENERIC PAGE MODEL NO. DESCRIPTION CHIP NO. 5082-3900 PIN Diode Beam Lead : 5 cs 183 5082-9394 Beam Lead Quad : ce 188 15082-9395 Beam Lead Quad pee 181 5082.9396 Beam Lead Quad — 184 5082-9397 Beam Lead Quad EIEN 181 5082-9398 Beam Lead Quad a + fet 5082-9399 Beam Lead Quad 1... : tet 5082-9696 Beam Lead Quad 184 5082-9697 Beam Lead Quad a : Saat 5082-9882 PIN Diode Chip 189 5082-9894 X-Band Schottky Detector Chip : 188Microwave GaAs FETS Selection Guide General Purpose GaAs FETs Low Noise Broadband GaAs FET . Low Noise GaAs FET ........- Handling and Use Precautions Applications for GaAs FETs BSo0aon Q GaAs FETsGaAs Field Effect Transi tor Selection Guide LOW NOISE FETS Chip Part Number | Equivalent Typical Frequency | Package Page HFET- HFET- Noise Figure HPAC- | Number 2201 2001 2448 10 GHz 170 6 2202 2001 1.1.68 4GHz 1008 8 1102 1001 1.448 4GHz 1008 3 eee 1001 1.6 4B 148, 4GHz 1008 3 1101 GENERAL PURPOSE FETS Chip Part Number | Equivalent | Typical Gain Typical Piss Frequency | Package | Page HFET- Hpac- | Number 2NB680 erie 1001 1608 155 48m 4.GH2 1008 3© 2N66B0 HewLerT iy packarD MICROWAVE GaAs FETS | (HFET-1101) |49-4* COMPONENTS HFET-1102 68-3! Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 4B Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER 15.5 dBm Typical Linear Power Output at 4 GHz USABLE TO 12 GHz RUGGED HERMETIC PACKAGE Description Applications The 2N6680 (HFET-1101) and the HFET-1102 are gallium arsenide Schottky gate field effect transistors in a package suitable for narrow band operations to 12 GHz. Their superior microwave performance in noise figure and gain ‘make them useful for applications such as land and satellite communications, and radar. ‘2N6860 (HFET-1101) and HFET-1102 are supplied in the HPAG-100A, a rugged metal/ceramic hermetic package, {and are capable of meeting the requirements of MIL: 19500, The HFET-1102 is a low noise and gain selection of the 2N6680, ado, oa ojos 4 t HPAC-100A Package Outtine Electrical Specifications at Tcase=25°C ‘Symbol Parameters and Test Coneltions Unite [win | typ. | Max. Toss | Saturated Brait Current, Vos = 40V, Vos = OV mA [a0 20. ‘Vase | Pinch Off Voltage, Vos = 40V, los = 100 nA vas “50 ‘Gm | Transconductance, Vos = 40, aVas = OV 10-050 mmno | 30 | a0 “Goinany | Maximum Avaliable Gain Vos = 40V, Ves =0 t=4GHe| 6 18 Finw [Noise Figure “2Ne6t0: f=4ane| 0B re | 22 HPET-1102: 4H 44 | 7, Gs | Associated Gain ‘2NE6E0: giz} a3 | a5 | 0 HFET-1102: 4GHe si0 | 120 Mos ~ 81, tos = 15% loss (Typ. 12. mA} Pras | Power at 1 48 Compression, Vos = SOV. os = 50% loss Guiz | am 185 Tuned for Maximum Output Power at +5.6Bm Input ache 140Recommended Maximum Continuous Operating Conditions Absolute Maximum Ratings" Symbol Parameter Values ‘Symbot Parameter nie 08 Trap Bowes Vote 08, ‘Drain To Source Voliage Sov S vog 5: su OVS Vas 2 00V av Vasiar | Gate Source "isa Vesier | Gate to Source Voriage SOV 2 Vos = sv 10.02 Vos > 0.0V =10v “Toya ununu Cael Teoorine | Tox Maximum Channel Temperature | 800°C Tere Torage Temperature “EC to E rage Temperature | 250°C 75°C. 280°C for 10306. each toad, 1 Operation of thie device in ances of anyone of bolow the" geign goal af tx 10" hours aT (assumes Betivation Energy = 16 eV Corresponds to Maximum Ratings to Maxim Comtnuous Forward Gate Currant shouls not excaed 28 mA Sie Thermal renstanee, channel 19 eare™= 200°C, I ett ial = oo a x rs eeer vias i e Fae i i 8 3 (Son aal ee = i aN HUME Figure 1. Typical Mason's Gain WU}, Ga nas. Figure 2. Typical Noise Figure Fyan) and and [S212 vs. Frequency at Vos = 40¥, Astociated Gain ve. Frequency. Vos ~ 38¥. ios = 100% toss fos = 15% loss. i i i : a 2 i i a 2 : ff : is # See = ° rT 20 140. ao a Maximum Output Power ai +3 d8m InputTypical S-Parameters High Gain Bias: Vpg ~ 4.0V, Vag ~ 0V Frequency. St i Bz Ba ‘ane ai “hag” | Weg [Ang wag [Ane | Mag [Ana 20 gu | 60s | ane | ime | 00 | sa | ze | 276 30 201 wo | 205 | oso | om | ssa | 755 | 40s -52 | 2507 | rs8 | 008 | ser | 732 | 40 Tazz | 2on | sss | om | 620 | tes | e727 cera | ater | sea | ows | eso | 716 | ooo soos | 4905 | tas | oot | oie | 7 | -t001 vast | veor | 72 | 06s | san | 708 | -1t82 tzeo | tes | -2s6 | tox | aoa | 720. | 1085 wos | iss | Moo | aa | att | 74 | 555 ‘co | tase | ee | us | 9 | tes | -1743 ree | 1320 | sis | 164 24 | rm | t670 = 4.0V, Ipg ~ 50% Ipgg aH si “se eae ‘keg | Wag [Ang [Weg | Ang [Weg | Ano 26 oie | 76 | 2e0s | a2 | 0 | ses | 705 | 22 30 | rz | 2008 | cor | om | a7 | cer | 437 40 750 | 118 | 2458 | 745 | 00 | 302 | sxe | 503 50 os | -tasy | 220 | sis | os | 218 | go | 703 60 en fcsmis | 2000 | 20s | ost | tes | sre | -o57 70 es | tat | veer 63 | 0 | i368 | 556 | otis 20 sar | ey | ieee | -140 | 089 es | 558 | -1s0 80 as | tza | tsi0 | aaa | 000 ss | 569 | “1350 100 ea | tose | tae | srs | os | 37 | oo | “1758 440 25 sea | izs7 | or | 106 | -e4 | ote 120 598 rao | 1s | seo | 125 | 261 |e Minimum Noise Figure Bias: Vps 3.5V, Ips ~ 15% Ipss TT Feeaueney, a si si ‘ous Wao ‘xog [Weg [Ang | Wes [Ane _| Weg 20 gas [sis | ates | wes | ow | sas 70 30 ase | 77a | 2070 | soa | oo | 303 | or 40 7 | ioe | tess | ir | oro | 280 | o50 50 wa | sara | isco | 507 | or | 4s | ‘620 60 sr | as20 | 1700 | 35a | 07s 62 | 600 79 gor | 755 | 1500 | 52 | om 13 | sr 80 oor | | 128 | ia | 4a | 77 5 | ss 90 sor | v4a0 | 1352 | ae | oo” | 2 | 570 100 oz | reas | 3201 | ae | on | -105 | 505 0 soe | ora | i100 | “aos “64 | 600 120 515 soo | to | 795 aro | sta ett fel aE . A 01 ‘ong Poe Bees Bae Typical Noise Parameters ager ; 2N6680 (HFET-1101) and HFET-1102 pies + ner belpe Fan | Bo gale roth (6H) | ag. | ang. | wea. [-ang. | (28) | cons) es ; 20 730 | 60 | a20 | 4a° | 125 | 1940 g 2) 5 = - ~ 40 | 61 | ot | 56 | 75° | 1.00 | ate AS ee 60 | 575 | 138 | eo: | 104" | 220| 00s 23 i so | sr |-r70"| ote | 137° | 200] 198 Fee oF Tae sao | 610 | 120° | 099 | 170" | 060 | 25.47 Sfeaeiihidv 120 | 060 | -r- | 740 | 157 | 450 | 40:30 eee power Deraing © igure 5. Poyss vs. Temperature, Power Derating Curve ote Vos = SV" Maximum power dissipation isa function 1 Optimum input Raletion Costcent To) Outpt Maton for Minimum Nowe I, Asroniates Note Figure Fun and Nols Resistance Fh et Nos = 38. oe = 158 toss Of device joss. Begin derating at Ppiss corresponding to inaivic Sevice loss, following s horizontal tine unt it intersects with sold diagonal lineLOW NOISE HEWLETT J PACKARD BROADBAND | HréT-2201 ComPONeNTS MICROWAVE GaAS FET] vx.» Features LOW NOISE FIGURE : 24 dB Typiel NF 10 GHz “mt eB HIGH MAXIMUM AVAILABLE GAIN one 45 dB Typical Gorn at 30 te eel. [ HIGH OUTPUT POWER ae eure 12 dBm Linear Power at 10 GHz ee aes. CHARACTERIZED TO 18 GHz Bs id HERMETIC MICROSTRIP WIDEBAND PACKAGE HIGH TRANSDUCER GAIN TO 18 GHz 0.5 MICROMETER GATE Description /Applications ‘The HFET-2201 is a gallium arsenide Schottky gate fleld effect transistor. It features a rugged, hermetic, microstrip compatible package that Is designed for consistent broadband or narrow-band operation over the frequency range of 2 GHz to 18 GHz. The device's superior noiseand ‘gain performance, coupled with its wide dynamic range ‘capability make it ideally suited for such applications as ECM, wideband surveillance, and warning systems. BOEING METERS HEHE HPAC-170 Package Outline In addition, its characteristics lend themselves to ease of circuit design in applications such as radar and com- munications equipment, ‘The HFET-2201 is packaged in the HPAC-170, The partis capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/ 883, Electrical Specifications at Toase=25°C ‘Symbol | Parameters and Test Conditions Unite | in. | typ. | ax. oss __| Saturated Orain Current, Vos = &5V, Vas =0V A 25 [45 | 60 Vase | Pinch Off Voltage, Vos = 8.5. Ios APPLICATION BULLETIN 24 Selecting a Design Medium for the HFET-2201 GaAs Field Effect Transistor INTRODUCTION The Hewlett-Packard HFET-2201 is a low noise, broadband Gallium Arsenide Field Effect Transistor. The Package, HPAC-170 (Fig. 1), was designed to enhance the RF characteristics of the chip and thereby offers broadband capability in the 2 to 18 GHz range. This is. accomplished by lowering the parasitic capacitance along with the source inductance within the package. (Parasitic capacitance and source inductance both tend to degrade performance). This bulletin reports the results of mounting the HFET- 2201 In two different microstrip environments: RT/ Duroid'"! and Alumina. In both cases the HFET-2201 was first measured for S-Parameters, using a specially designed test fixture which is constructed for minimum loss. Then the device was mounted on a 509 microstrip line, and again measured for S-Parameters. All the S- Parameter measurements were made on the Hewiett- Packard 85428 Automatic Network Analyzer. Lo ard [%s aie “we _ _t el Figure 1. HPAC-170 Package Outline.18 A Comparison of the S-Parameters of the HFET-2201 Mounted In a Fixture and on Duroid Circuit = os z ae roxrony : OT Teo Bu 5 os ae 5 Se 5 a © a2 bogetaoy 3 o4fvyy 25 a a Figure 4, Input Rellection Coetficent,(813| vs. Frequency. Figure 5. Forward Transmission Goeficient, Sat] vs. Frequency. REVERSE TRANMHION COEFFICIENT [6 (OUTPUT REFLECTION COEFFICIENT fucrune ou ‘ouror oa eyaiaer en hh A 1 Figure 6, Reverse Transmission Coefficient, [S21] vs. Frequency. Figure 7. Output Rettection Coefficient, [S2| vs. Frequency.DuROID Fifty ohm lines were etched on 0.031" RT/Duroid board («- = 2.25). The board was mounted in a "Modpak”@! box #7011, 34.13mm (1.844 inches) x 34.13mm (1.344 inches) [See Figure 2a and photo 2b). A hole, 4.57mm (.180 inches) x 3,05mm (.120 inches), was cut in the electrical center of the 50M line, for device placement. Solder used was lead/tin (36% Pb, 60% Sn, 4% Ag). SMA connectors were OSM #220. Lye aaa at ui mee enac nin 024) eet eee ora caont To dampen moding efects."Poly-ron strips were placed parallel to the device on each side, and on the inside top annem Dare (rove sung nese our S-Parameters for the device, measured inthe test fiture Figure Sa Grow Secon Drawing of Alumina Moura, and mounted on Duroidareshowninrigures..5.6,and7 a 7 1 4 anise santa] Fone as ry soe ‘DuroIo BoARD| SK anime oy al La =i ES ins Figure 22, Cross Sectional Or ing of Durold Mounting. Figure 3b. Kover Cirult Figure 2b. Duroid Test Circuit and Housing. ALUMINA. ‘The alumina substrates were 2.54mm (100 inches) x 5.97mm (.236 inches) x .64mm (.025 inches) with a 500 line on each. Substrates and device were mounted on & cartier (see Figures 3a and ab) The substrates were die attached to the carrier while the device was silver conductive) epoxy bonded. Ribbon bonding was used to attach the device leads to the 5011 lines. The carrier, with device and substrates, was placed inside an amplifier housing (photo Figure ac). The SMA connectors used were the flange type from Sealectro'®! (#50-645-4545-31 Results of the S-Parameter measurements on the device are shown in Figures 8, 8, 10, and 11 Figure 3e. Alumina Test Cireult and Housing, CONCLUSION ‘Mounting the HFET-2201 on alumina will result in ess loss ‘Sos and S12) at frequencies greater than 8 GHz. The use of Duroid, especially above 8 GHz, results in greater losses. REFERENCES 1. RT/Duroid manufactured by Rogers Corp., Chandler, Arizona, 2. Modpak manufactured by Adams-Russell Co., Wal- tham, Massachusetts, 3, Sealectro Corp., Mamaroneck, New York. ” o ce Ww L g zt o oOA Comparison of the S-Parameters of the HFET-2201 Mounted In a Fixture and on Alumina Circuit z z, ome} i, Eos] 8 _eOCTURE an - : i ee See : io oe a BY zi Et Figure 8. Input Retlection Coofficlent, (811 ve, Frequency. Figure 9. Forward Transmission Costicient, [zt] va. Frequency. Figure 10. Reverse Transmission Coetficient, [S13] vs. Frequency. Figure 11. Output Retlection Coettlclent,/Sza| vs. Frequency. Ff GaAs FETs20 HEWLETT, g PACKARD COMPONENTS, APPLICATIONS FOR MICROWAVE GaAs FETS A 6 GHz Amplifier Using the 2N6680 HFET-1101 GaAs FET (Portion of Application Note 970) INTRODUCTION ‘The Hewlett-Packard 2N6680 (HFET-1101) is @ device designed for good noise, gain and power output ‘characteristics when used as an amplifier. The purpose of this application note is to highlight some of the design tradeoffs when using a GaAs FET. The example is an amplifior for use in the 6.9 t0 6.4 GHz telecommunications band. The amplifier's performance over this band is ‘excellent, with a maximum noise figure of 3.3 dB. minimum associated gain of 10.9 48, a flatness of +0.4 dB and a 9.5 dim minimum power output at 1 dB gain compression. The maximum input and output SWR are 2.87:1 and 1,90:1 respectively. DESIGN TRADE-OFFS The first choice facing a designer is biasing. In comparison to silicon bipolars, GaAs FETS require more Current at a lower voltage, with the net result being about, the same power dissipation. Power supply requirements should reflect this characteristic. With any single stage amplifier design, there are three performance parameters that require different optimum bias settings. They are: 1. Minimum noise figure Vos = 3.6 Volts, los = 15% loss 2. Linear power output Vos = 4.0 Volts, los = 50% loss 3. Maximum Gain Vos = 4.0 Volts, los = 100% loss For the three critical bias settings above, the input and output matching data are available from the scattering" noise®, power and gain parameters. The linear power, bias point of Vos = 4.0 Volts and los = 60% loss provides a good compromise between minimum noise figure and maximum gain, At this bias point the scattering, noise, power and gain parameters can be measured by various known techniques’ Typical parameters at 6 GHz for the 2N6680 are: Scattering Paramet rs Gain Parameters Si = 0.641/-171.3° k= 1.504 S12 = 0.057/16.3" Go (max) = 11.98 6B Sot = 2.:058/28.5° Pas = 0.762/177.9° S2o = 0.872/-95.7° Pu = 0.718/103.9° Power Parameters @ Noise Parameters Prune = 5 d8m Praga = 18.5 d8m Gp= 3208 Pes = 0.729/166° PU = 0.875/104.5° Pe = 0.489/101° Even at this compromise bias point, the input matching network has four performance trade-offs that can be juggled. They are: noise figure; available power gain: ower output; and input SWR, Since most low noise receivers work in a small signal environment, the design engineer is typically concerned, with compromising gain and input SWR for noise figure. Moving from 'o toward T's along a straight line, input SWA improves to 1.0:1 at I's, assuming the output to be onjugately matched. At the same time, noise figure and available gain are increasing. Table | shows correspond- ing values for noise, gain and input SWR. TABLE! EE is [ue [| tow | ou g/hoe | _man/iog_| oi | sot | swe_| swe Toa opine’ fosters" | 290 | 93s | van | vo0 ‘osranise [awoiiie | amr frome pasty | 1001 ‘orate | nach | ate [9058 | 2am1 [von 9a7ari6s" | ner /105" | 57 fra | vent | 1001 Ts = oneier forvaiioe [ae] vise | 1001 | 1607 From Table |, @ very good compromise input match condition is fs = 0.614/160° and the corresponding ‘output conjugate match condition is '.=0.627 106°. In comparison to the minimum noise match conditions the noise figure is increased by 0.24 dB but the associated gain is increased by 1.22 dB and the input, SWR is improved by 40%6 to 2.28:1 With the choice of I's and I'L discussed above, itis now possible to synthesize the input and output matching networks INPUT MATCHING NETWORK 1. The impedance Zs, corresponding to 1 0.614/160° 1 52180 100 i's8n /'s TOWER -2Wgleor ty || TTP -2 Wylcos Ts 2521229 +18.30 2 Ys 0.056 - 0.038 3. An open circuited stub looks like a shunt admittance Y= jYo tan Be. Therefore, an open circuited stub that is three-eights wavelength long looks like a shunt inductor of admittance -Yo. Hence: z= Ey eomcelival eens4. Since the driving source impedance is $011, a quarter~ wave transformer of characteristic impedance ey |- 29.9082 completes the input matching network. . aera 9 v “LE OUTPUT MATCHING NETWORK 1. The impedance 21, corresponding to = 0.627/106" . #2150 5100. inf TR Ra ex Zig Tea Cor ZTL ZL 1745 +3486 2. y-gh- 0012-10073 3, The output matching network is similar to the input matching network. An open circuited stub thats three- eighths wavelength long looks like a shunt inductor of admittance -iYo. Hence J = a3.4se2 mo 4, Since the load impedance is 50%, a quarter-wave transformer of characteristic impedance 5.601 completes the output matching network PERFORMANCE. ‘An amplifier was constructed using the design derived above, A comparison of the computer simulation with measured amplifier pertormance at 8 GHz is shown below. ‘Measurea | Computer Parameter | Performance | Simulation Gain 11,50 68 70.55 0B Input SWR 2671 2281 ‘Output SWA 1.9031 1.001 Isolation 23. 68 20.60 68 Noise Figure 327 68 31408 The performance of the amplifier was measured over the Figure 1. Gain Performance, Figure 2, Noise Performance. 5.91064 GHz band. Figures 1, 2,3,4and show the room temperature performance. —aEasaay Coo @*® Gats FETs 7 3 allt Figure 8, Input-Output SWR Performance 22 5 ba Figure 4. Power Output Performance. seen oe Figure 5. Wideband Gain Performance. CONSTRUCTION ‘The board material is 0.031" RT/Duroid 120-061 (05880) (Manufactured by Roger Corp. in Chandler.AZ), with toz. copper clad on two sides. The relative dielectric constant (eplis 223. Duroid was chosen because of its low loss tangent. The thickness of 0.031" was chosen sothe source top cap could be soldered to the RF ground, thereby taking advantage of the low source inductance. To minimize transition interactions the shunt stubs were balanced along the series transmission lines. The bias network is fed at the quarter-wavelength point of a half- wavelength open circuited stub. Two different types of biasing networks were used with the same result. A schematic of the complete amplifier and biasing circuit can be seen in the diagram that follows. The differences between the biasing networks are: 1. Schematic |is an active network which requires a dual polarity supply with an active pulse recovery loop. 2. Schematic Il is @ self-biasing network which requires a very good source by-passing capacitor. It has a lower component count with a single supply requirement. It Js, however, more subject to oscillations, ‘The auisont point is controled by Az and Rg. Ri is at justed to provide the proper Ups and Ag is adjusted to supply the correct drain current (Ips) Schematic Complete Ampliter — i 7 L he Vv ‘The quiescent point is controlled by My and Fi. Ay is ad justed to provide the proper Vos na Ro is adusted to supnly the correct drain current (lps! Schematic I Complete Ampitior REFERENCES 1. 2N6680 (HFET-1101), Microwave GaAs FET data sheet (Publication No. 5952-9889). 2. Hewlett-Packard Application Bulletin 19, "Noise and Power Parameters for the HFET-1101" 3. Hewlett-Packard Application Note 95-1, “S-Parameter Techniques for Faster, More Accurate Network Design”. September 1968, 4, Hewlett-Packard Application Bulletin 10, “Transistor Noise Figure Measurements”. Publication 5952-9846Bipolar Transistors Selection Guide General Purpose Transistors - pian: Linear Power Transistors. . eae Low Nolse Transistors .... Applications for Silicon Bipolar Transistors. pe Supplementary Readings .............esee sees 7. 23 @@, BIPOLAR TRANSISTORSSilicon Bipolar Transistor Selection Guide LOW NOISE TRANSISTORS Partnumber | Typical Typlea Frequency | Package | equivalent | Page xta |_Notwerigure | _Assocleted Gain weac: | HxTR: | Number Gi0r (aNeeiT) | __28 08 3068 Tone _706T 6001 6 3102 25 08 30.68 aonz | —706T 001 s 103 ensoie) | 1.8 a8 720.08 2GHe 100 001 @ e104 1408) 14008 15 Ghe 100 001 = 6105 308 8 00 68 «Gis a oT sa 6108 2548 11548 acu | 7oat 200% 7 GENERAL PURPOSE TRANSISTORS Chip Typical Gain | Typical Prop | Frequency | Package | Equivalent | Page ewe: | “fxra | number 2101 enssre, | 10508 735 dBm wane 100, 2001 25 202 15008 200 68m zane | 706T 2001 a Boi enoron | 75 a8 22.0 48m aGHe 00 001 29 5109 110 a8 230 d8m 2GHe 200 5001 Ey LINEAR POWER TRANSISTORS hip Typical Pygp | Typleal Guin | Frequency | Package | Equivaent | Page trac: | “taxa” [number 301 (anevon) | 220 dom 7508 wane 100 5001 29 sta2 375 48m 70.68 wane | e00Ge/e | sooe 2 5103 230 d8m 110.08 zGhe 200 003 a 5104 280.d8m 20.08 acne 200 sooz 4 Hewlett-Packard also supplies microwave bipolar transistors from the 35800 series for use in existing systems. Designers selecting transistors for use in new designs are encouraged to consider the superior performance of the HXTR series of devices available from Hewlett-Packard,— @ HEWLETT (fp PACKARD GENERAL PURPOSE 2N6679 COMPONENTS TRANSISTOR ia Features HIGH GAIN 10.5 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Description ‘The 2N6679 (HXTR-2101) is an NPN bipolar transistor designed for high gain and output power at 4 GHz. The device utilizes ion implantation techniques and Ti/Pt/Au ‘metallization in its manufacture, The chip is provided with a dielectric scratch protection over its active area, The 2N6679 is supplied in the HPAC-100, a rugged ‘metal/ceramic hermetic package, and s capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/883. HPAC-100 Package Outline Electrical Specifications at Tcase=25°C Symbol | Puametr uo Ten Como MILSTOTE Tinie Poe | yn vee BNces_| Collector Emitter Breakdown Voltage Ic= 10018 OTT v_ | 30 ieeo | Solio Eni Lnkage Curent at Vea=i5V sori | oa a |eso. Collector Cutoff Current at Vog=15V_ 3036.1 nA 100. hee | Forward Curent Taser ato VeenT6Viigsidaa [arent | | a | ao | ao Gr | Tied oh we | 0 | ws Pras Power Output at 1 dB Compression: | dam 18.6 Bie Condions or Above NGe=16V lan, Crean = 4 Ge } +300 us wide pulse measurement <2% duty evele QQ BIPOLAR TRANSISTORS26 Recommended Maximum Continuous Operating Conditions! Absolute Maximum Ratings Symbol Parometer Vane) [Syma Paiameier Tm ‘Ves | Collactor fo Baso Vottago™ BV Veao | Coliecior to Base Vottane sav Veco | Golector 1 Emer Vatsgo tev Veco | Collector to emir Votage av Veso | Emir o Base Votagelt tov Vaso. | Emit to Base Vonage tev le Be Calector Curent Sima te De Callactor Curent Toma fr | fata Deven Dissipation somw Fi — | Totw Devi Diesipaion 00 mW F_ | dnewon temperature 0c Th | duneton Temperature 0 Toro | Storage Temperate s5'cta Tsrawany watimum storage Tergerione | 250°C 200" = Lone Temporare cS ‘Soldering 0 seconds each tao) | 250°C egy routs arasuenon Soke ean she eter tne ean Sategets a fone oreo me eon lastumed Acvation Energy = 75 eV Coresponds to anima ratrg for anoere, 2 Tease = 25°0, 5. Derate at 48 mWi¥e, To = 105% SE ae LC MEA AN a Figure 1. Typical Guiwax) and Tuned Figure 2. Typical Power Output at Figure 3. Typical |Szrel? vs. Bias at Glin ws. Frogueney a ee, 195" Comefeosion an Small Signa oie teresa Gan, cotector Curent at 4G for vee ev Typical S-Parameters Vcc = 15v, te = 25m 2 ra te ae Freq. (itz) |" "Mag. | Ang. | (a8) | Mag. [Ang ‘Mag. | Ang | Meg | Ang. 100 oa | 8 we |e aor] ee] ae fe 0 Sas | ato ter | oe om | a | on | ar ‘00 oss | cs co | co | st | fa |e io | tse | we th |e cor | ss | oe | ae moo | ogo | tee is | os oo | ss | ow | oe zoo | st | tas in | 8 oo | & | oa | oo so] one | tae te | a co | a | ow | or So | bes | ae tee fog om | se | a | oo coo cee | tt im | i or | so | oes | soo oer | ta to | 4 oie | a | ose | 90 so | om |e te | 8 ou | oa | oa | oe ‘Seo | om | tos te | ae ow | a | om | ane ‘000 nee | toe th | ae ou | ge | oes | cies 6500. 0.62. 88 1.92, 3 0.20 28 087 “131wemuerr f packano COMPONENTS GENERAL PURPOSE ts TRANSISTOR | "#2? Features HIGH GAIN 15 dB Typical at 2 GHz 11 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction Description ‘The HXTR-2102 is an NPN bipolar transistor designed for, high gain and wide dynamicrange up to6 GHz. The device utilizes ion implantation techniques and Ti/PV/Au metallization in its manufacture. The chip is provided with ‘a dielectric scratch protection over its active area. The HXTR-2102 is supplied in the HPAC-70GT, a rugged metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 land the test requirements of MIL-STO-750/883, @®y BIPOLAR TRANSISTORS ‘OUTLINE HPAC-70GT Electrical Specifications at Tease =25°C wiLeTD.760 ‘symbol_| Parameters and Test Conditions, Test Method | Unita | min. | Typ. | Max. BVoES _ | Colector-Emitier Breakdown Volage at Ic = 100A, sora |v | 30. oo _| Collector-Emiter Leakage Current at Vce = 15V. ENTE] 7A. 30 cag _| Callector Cutoff Current at Vee = 15 3086.1 TA. 00 Thre | Forward Current Tender Ratio at Vce = 18V. le = 1A, sore | = | 50 | 120 | a0 Gr | Tuned Gain, 1-2 GHE eee 4GHe i Pree | Power Output at 1 48 Compression eons a 20 4GHe 145 ‘Bias Conalitions for Above: Vee » 154, lc = 25mA 300u9 wide pulse measurement <2% duty cycle. a28 Recommended Maximum Continuous Operating Conditions! Absolute Maximum Ratings * Symbol Parameter, Value Symbol Parameter Dm | Wee” | Golector to Base Vataga™ 2 Veso | Coletor to Base Vorage =v veto | Golector to Emiter Votage? ‘ev Veco | Colectr to Emiter Vatage av Yess | Emitero Bese Volage™ tov eso | Enter to Base Vottage tv ic De Calector Curent a5 mA tc Be Golector Curent oma Pr | Tota Device Dielpaons acon) fr | Tet Doves Dasipation 00m qu dneton Temperature 2000 1s | dncion Temperature aoc Tore | Stomge Temperature 25°C to] | Teraqun)| Maximum Storage Temperature 2506 “e006 - teed Temperate ‘Soieng 10 soconds each ones _| s250%c Tperatn of is MTBF! fo below tno aesign goa! of 410! hours at Ta 7S assumed Actvation Energy = 18 eV) 5. Derte at 54 WC, Te = 117°C ' 8 1 a ; er : roa i s Th i iy Fe : Herat eet ECE Figure 1. Typical Guimay and Sore v8 Figure 2. Typleal Power Output at 42 ——_—Figure 3. Typeal Sze ve. Current at 2 Frequency at Voe=t5V,1o=29 mA. Compression ana Smal Signal Gain 2th fe Current for Voge t3V Typical S-Parameters Vee = 15v. | on on a Fre. (mH) Mag. co) ‘ana_| (68) [Map| Ang. | Meg | An 100 013 308 ‘ao -ge2] oot |e? J one} 6 200 O83 2a ta | Sse | oom | 4 | or | 25 300 O64 381 ms | 34s | oom | a | om | 0 00 O84 242 tor | 36 | oo | a | os | 0 500 O64 28 tor | see | 000 | @ | oso | 600 ose 22 | oe | oom | a | cas | a2 700 O84 io3 2 | ‘20 | oo | 4 | oar | a3 200 O84 138 as | 3i7 | oo | 4s | oar | oe 80 O64 3 es | ste | ooo | | oan | as 1000 O64 199 & | Sos | 002 | 4 | oa | ‘as 1500 998 133 7 | 221 | Goss | 4 | om | Mo 2000 Oss mt | 271 | dom | & | ome | 0 2800 087 A s | 257 | ons | s | oar | 3 5000, nA 78 % | 23 | oon | s | ose | oe 3500 ore 6a @ | 233 | oo | s | os | 4000 089 53 2 | 5 | oom | @ | os | es $500 ovo | mn | a4 | 38 | oon | a | oss | oe 5000 or | i | 39 6 | 215 | oes | 39 | ose | ior +3800, or | ime | as 3 | 07 | oo | a | os | 09 000 o7s | 422 7 +1 | 301 | oo | 9 | om | ne 500, or | ve | oe 20 | ‘96 | oss | 26 | 070 | sarHEWLETT. BM packann COMPONENTS. © 2N6701 (HXTR-5101) EIGAS, LINEAR POWER TRANSISTOR Features HIGH Pigg LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH Pigp GAIN 13 dB Typical at 2 GHz 7.8 dB Typical at 4 GHz LOW DISTORTION HIGH POWER-ADDED EFFICIENCY MATCHING CONDITIONS INDEPENDENT OF OUTPUT POWER. INFINITE SWR TOLERANCE ABOVE 2 GHz RUGGED HERMETIC PACKAGE Description /Applications ‘The 2N6701 (HXTR-5101) is an NPN bipolar transistor de- signed for high output power and gain up to 5 GHz. To achieve excellent uniformity and reliability, the manutac- turing process utilizes ion implantation, ‘selt-alignment techniques and TVPVAU metallization. The chip has a dielectric scratch protection over Its active area and TazN ballast resistors for ruggedness. ee HPAC-100 Package Outline ‘The superior gain, power, and distortion performance of the 2N6701 commend it for applications in radar, ECM, space, and commercial and military telecommunications. The 2NG701 features both guaranteed power output and associated gain at 1 dB gain compression ‘The 2N6701 is supplied in the HPAC-100, a metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/883, © BIPOLAR TRANSISTORS 29Electrical Specifications at Tonge =25°C Test Symbol | Parameters and Test Conditions ‘MIL-STD-750_| Units | Min. | Typ. | Max. BVcso | Collector-Base Breakdown Voltage at Ic = 3mA 3001.1° v 40 BVceo | Collector-Emitter Breakdown Voltage at Ic = 15mA 9011.1* v 24 BVeso | Emitter-Base Breakdown Voltage at Ip = 304A. 3026.1" v 33 | tes0 Emitter-Base Leakage Current at Ves=2V 9067.1 eA 2 ‘ces | Collector-Emitter Leakage Current at Voe=32V soe nA 200 cao | Collector-Base Leakage Current at Vca=20V 3036.7 nA 700 We | Foard Curent Taser Rao at Voese¥, see Paes Pras | Power Output at 1d8 Gain Compression feagHz em 2 4GHe a} 2 Gigs | Associated 148 Compressed Gain 2GHe = 18 GHz es | 75 Par _ | Saturated Power Output (8B Gain! 2GHe a 235 (dB Gain) AGHz, Mn 25 1 | Power-Added Etficlency 262 a a5 : at 138 Compression agHe 24 IMD | Third Order intermodulation Distortion He ’ ‘(Reference to either tone). at Po(PEP) ao is o Tuned for Maximum Output Power at 108 Compression Voe=16V, lo=20mA : “ao0ss wie pulse measurement a <2% duty eel Recommended Maximum Continuous Operating Conditions!) Absolute Maximum Ratings * Symbol Parameter Value Symbol Parameter Lenit_ Veeo ‘Collector to Base Voltagel?i “40V- Veso. ‘Collector to Base Voltage ev Vceo Collector to Emitter Voltage! 24 Vee Collector to Emitter Voltage 27v Veo ay eso | Emitoro Base Votage v te soma ie ‘D0 Collector Curent 400-ma. | Total Dee Dissipation?) “00 mW fr | Total Device isipation naw u Jupetion Temperature ur u Junction Temperature sore Tera | Siorage Termporature AeC0 Torawan| Maximum Storage Temperature | 250°C “200-6 2 ‘aed Tempera {Sovaering 10 seconds each lend: | +250%C ‘ei o eau ‘s permanent damage tots device ¥ MTBF" fo below the desig 7 (aawumed Actiation Energy foranerorete Ge AND Sy OUTPUT POMER AND On 8 TT 7 Sm S| cara 4 + 7 a FReQuEney i! Figure 1. Typical Gaimax’, Maximum Stable Gain (Gre). and Szie vs. Frequency at Ve = TBV, le = 3OmA. z oy oe 810 ‘FReayence (ee Figure 3. Typical Pras Linear Power anc Associated 168 Compressed Gain vs. Frequency at Vee = 18V. te = S0mA. ae PReauEne me) Figure 5, Typical Noise Figure (Fmin) and ‘Associated Gain (Ga) when tuned for Minimum Noise vs. Frequency at Vor = BV, Ie= 10mA. Typical Novse Figure (FD) when tuned for Max Prag at Vee = TBV, le Soma, ureUF POWER dt AND AN AB Spel “QUTRUT PONE OF EACH TONE) ATS Figure 2. Typical Sate ve. Current at 2 and 4GHe saeuenure ev. {OLLECTOR CURRENT nat Figure 4, Typical Piao Linear Power and Associated 168 Compressed Gain vs. Current at Vee ~ 12 and 18V al 4GHz oe es UY POMER OF EACH TONE lab Figure 6, Typical Two Tone 3rd Order Tatermodulation Distortion at sGH2 for @ frequency separation of SMHz at Vee BV, c= 30mA. (CQ) BIPOLAR TRANSISTORS 31i T B volt ae 3 § ma i | Figure 7. Maximum Power Dissipation Figure 8. Typical Pus, Iw, (calculated Cutve for fe = 210°CIW, Tix = 200°C. fom the average S-parametors) in the 2to GHz trequency range. at Vee = 18V. le = 30mA Typical S-Parameters vce = 18v. 1c = 30ma Sa Sa Sie Sa Freq. (Miz) | Mag. | Ang. ‘Mog [Ang | (6B) | Mag. | Ang. | Mag. | Ang. 100 ‘oa | 8 vor | aes | ar | oor | 7 | om | 200 | 3 soz | 1 | “1 | oo | o | om | 45 00 o7 | 69 | 105 | a4 | 143 | 28 | 004 | 6o | om | 21 400 o72 | a | wr | aes | iss | 27 | 005 | 53 | om | 26 500 os | 1 | 9 | rer | ts | 26 | 005 | a | o7e | “30 600 oss | 2 | mo | zs | 7 | 2s | oo | 2 | on | 33 709 oes | -to2 | 162 | es2 | 110 | 24 | 006 | 30 | 069 | “26 300 ose | as | 155 | 596 | toe | (24 | oor | 36 | 068 | 36 800 os | 9 | we | 549 | 99 | 23 | oor | ss | os | oH 1000 60 | +126 | 1 | sos | o¢ | -23 | oor | a | og | “43 43500 os | 51 | 2 | see | 75 | 23 | 000 | 2 | oss | st 2000 oss | 10 | sa | 200 | so | ‘32 | aos | 2 | ose | “e 2500 oss | we | 72 | 220 | a | 2 | op | 2 | oss | 72 ‘3000. oss | we | s7 | 193 | 33 | 2 | oo | a | om | oe 3500 ose | 18 | 45 | 108 | at 20 | 010 | 20 | oss | “0 +4000 os | we | a5 | 150 | w | “49 | on | 19 | oss | 96 4500 oss | iy | 28 | tas ° 19 | on; | 38 | 058 | 406 5000 ose | wes | 16 | sar | sy | 8 | 13 | 36 | 062 | “119 3500. ost | is | to | aie | | hi | one | ta | oso | 422 6000 ose | ws | oo | vor | “oe | fi | ons | is | ose | 190 Typical S-Parameters vce = 15v, 1c = 15mA on Sa oe Sa rea. (WHe) | Mag. (8) [Meg [Ang | (@8) | Mag. | Ang. | Mag | Ang. 100 ‘080 toa | 935 | to | 7 | on | ve | 093 | 7 200 078 vor | sor | 155 | st | 002 | 0 | 096 | 44 300 76 vs | a4 | 145 | 2a | 003 | or | ost | 20 400 073 we | 779 | 195 | 26 | oo | 55 | 086 | “25 500 68 va | nie | ser | 25 | 005 | a | os | 20 00 oer weg | 656 | 119 | 24 | ons | a | 075 | 32 700 64 15 | 6o2 | u3 | 23 | os | 4 | o72 | “a5 00 2 4a | ss | sor | 2 | 008 | 37 | 069 | “38 900 60 v2 | sig | tor | 23 | oor | 3 | 005 | 40 1000 0.80 ya5 | 470 | 98 | 23 | oor | a2 | 083 | 43 1500 osr roa | sar | ze | 22 | 008 | 2 | osr | So 2000 056 3s | 269 | 6 21 | 00s | 2 | og | 3 2500 956 e9 | 221 | 4 | -21 | oo | 1 | oss | 35 ‘3000 058 si | ta | 36° | 20 | 008 | a | om | a5 ‘3500 056 43 | ye | on 20 | o10 | 18 | os | +4000 053 33 | ta | 40 ao | on | 3a | ose | 0 4500 053 ea | 190 | 0 8 | on | 7 | oso | 108 5000 0.50 15 | se | to | a8 fo | te } ose | oe 5500 082 op | 10 | 2 | a7 | on | 3 | os | cae 6000. 053 oo | ooo | 1 | 46 | om | on | oes} ss35© LINEAR POWER HEWLETT oi PACKARD HXTR-5102 COMPONENTS TRANSISTOR 46-48 Features HIGH Pygg LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz HIGH Prag GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz PARTIAL MATCHING FOR BROADBAND OPERATION LOW DISTORTION HIGH POWER-ADDED EFFICIENCY MATCHING CONDITIONS INDEPENDENT OF OUTPUT POWER INFINITE SWR TOLERANCE ABOVE 2 GHz RUGGED HERMETIC PACKAGE Description/Applications The HXTR-$102 is an NPN bipolar transistor designed for high output power and gain up to § GHz. To achieve excellent uniformity and reliability, the manufacturing process utilizes ion implantation, solf-alignment techni- ques and Ti/Pt/Au metallization. The chip has dielectric scratch protection over its active area and TagN ballast resistors for ruggedness. A silicone conformal coating protects the chip and matching network The superior power, gain and distortion performance of ) the HXTR-5102 commend it for use in broad and a2 BIPOLAR TRANSISTORS ve vr a HPAC-200 GB/GT Paciape Outline narrowband commercial and military telecommunica- tions, radar and ECM applications. Additionally, its partial internal matching makes it ideal for broad bandwidth designs in the 2 to § GH? frequency range with minimal sacrifice of output power and gain. The HXTR-5102 is supplied in the HPAC-200GB/GT, a metal/ceramic hermetic package with a Be0 heat Conductor, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/883,Electrical Specifications at Tease = 25°C Test ‘Symbol | Parameters and Test Conditions MiL-STO-750_| Units | Min. | Typ. | Max, Ves | Coliector-Base Breakdown Voltage at jo-10 mA 3001.1" vo [40 BVceo | Collector-Emitter Breakdown Voltage at io=50mA | J011.1° va BVeeo | Emitter-Baso Breakdown Voltage at 1p-100 uA 9026.1" vf 3s feoo | Emitter-Base Leakage Current at Veo=2 V 3061.7 uA 5 Ices | Collector-Emitter Leakage Current at Vce=02 V g0ai-a mA 200. Ieao | Gollector-Base Leakage Current at Voo=20 V 3036.1 nA 100 ire | Forward Current Transfer Ratio at Voe=18 V, ak Sela (eae Pies | Power Output at 148 Gain Compression 12 GHz 8m 2 4.GHz 265 | 275 Gide | Associated 148 Compressed Gain 2GHe 5 4GHz 98 feo | 70 Psat _| Saturated Power Output (8 d8 Gain\ 2GHz 3 310 (3.08 Gain) 4GHz cpa 205 . Power-Added Efficiency at 2 GHz x 37 1-48 Compression 4GHz 23 AMD | Third Order intermodulation Distortion “4 GHz B “30 Reference to either tone), at Poi PEP/=5 W. ‘Tuned for Maximum Output Power at 148 Compression Voe=18 V. Ic=110 mA 300 1s wide pulse measurement at <2 duty cycle Recommended Maximum Continuous Operating Conditions!" Absolute Maximum Ratings ‘Symbol Parameter Value ‘Symbol Parameter Liemit Veeo | Gollecor to Base Votapo™ a0 Vso} Calecor to Base Vatage av Veto | Gotector to Emir Votope 2 Veco | Collector to Emitor Votaoe ay Veo | Emir to Base Votage!t aay Veo | Eniter to Suse Votage v le 16 Collector Curent 160A ie 5 Collecior Curent 280 mh Fr | Total Daves Dssoation®! 27 Pr —_| Fete Device Diesipation a yo sine tanpegtore aoe a Junction Temperatore sore Tero | Storage Temperature Aecie Teroqo] Makimim Storage Tempormure | 250°C Sa00e Lena Temperature {Solaaring to seconds exch lee) | s250re TS Operation of this device in excoss of ary ane ofthese conditions is 18 Actvation Enetgy = 8 eV 4. See Figure? for crating conations, “Operation n excess of any ane of hese codons may resut inui ew Sn 68) FREQUENCY fate) Figure 1. Typical Gaimax), Maximum Stable Gain (Gms), and Sore vs. Frequency at Vor ~ 18V, te toma Ey ‘vTPUT POMER dn) AND GAIN 8) toe ee ei FREQUENCY (one) Figure 3. Typical Piao Linear Power and Associatec 408 Compressed Gain vs Frequency at Voce ~ 18V, le= 110mA\ Nos Ficune ano-oavn 38) FREQUENCY (Ge) Figure 5. Typical Noise Figure IFmin) and Associated Gain (Ga) when tuned for Minimum Noise ve. Frequency at Vee = 18. Ie = 25mA, Typical Novae Figure (Fp! When tuned for Max Prap af Vce = 1BV, Ic = TOMA. 0 ee COLLECTOR CURRENT inal Figure 2, Typleal Sore vs. Current at 2 and 4GHz QQ) BIPOLAR TRANSISTORS ‘OUTPUT FOMER ln) ANE. GAIN 8 oN NR RR « S670 w 90 O90 Tao no VOTO COLLECTOR CURRENT na Figure 4. Typical Prap Linear Power and Associated 148 Compressed Gain vs. Current at Vee = 2 and BV at aciie ‘OUTPUT pone OF EACH TONE Kn) 2 a Figure 6, Typical Two Tone 314 Order intermodulation Distortion at 4GHz for a frequency separation of SMHz at Vee = IBV, le = 110mA 35TOTAL DEVICE DISSIPATION ‘CASE TEMPERATURE Ce) Figure 7. Maximum Power Dissipation Curve for Be = Figure 8. Typical Ps, Fu [calculated from the average '58"CIW, Tmax ~ 200°C. ‘S-parameters) in the 210 5.5GHz frequency range, for Vee = 18V, te = 1H0mA. Typical S-ParameterS vce = 18 v, tc = 110 ma sn sr sw su Frea.(MH2) [Mag | Ang. | (#8) | Meo. | ang. | (a) | Mag | Ang. | Meg. | Ang ee. so eee 200 65 | 109 | 227 | 136 | 125 | -2 | oo | 30 | os | -47 300 ovo | 136 | 208 | 109 | 108 | -27 | 005 | 20 | oss | so 400) ove | 1 | 6 | oar | ov | 26 | 005 | 21 | o«a | 05 500 ova | 158 | 172 | 722 | se | -26 | 005 | a7 | 04a | -7a 600) ors | 160 | 156 | 890 | 1 | 25 | 005 | 13 | os | 75 700 ova | -167 | 146 | 500 | 76 | 25 | 005 | 11 | oa0 | -70 ‘800 074 | -170 | 194 | 466 6 25 | 0.06 @ | o39 | -22 900 ova | 75 | tar | ase | oe | 25 | 006 | 8 | oss | 26 1000) ova [sive | te [301 | 60 | -25 | 006 | 7 | oar | a2 1500 on [166 | 90 | 262 | 4 | -26 [008 | -2 [04s | -107 2000 oss | iss | 73 | 292 | 30 | 23 | oo7 |e | ost | -n9 2500 ose | 140 | 69 | aor | 7 | 2 | 008 | -22 | oot | -19 3000 ose | ize | sa | 186 | «9 | -21 | 009 | -2 | o7a | 140 3500 ois | 188 | 36 | 165 | -69 | -20 | 000 | -or | o7r | -165 4000 ose | 45 | 28 | 198 | -119 | 22 [008 | -08 | oa0 | 77 4500 os [ass | 00 [x00 | =e | 2s [aos | sg | 08a | art 5000 ‘oro [476 | a9 | ost | 70 | 28 | oo« | so | oar | 150 3500 ove | 455 | 30 | om | wei | -25 | 00a |a5 | oes | va 6000 oes | 9 | 39 | oes | 1 [9 | on | 16 | os | t21HEWLETT, Sp PackaRD LINEAR POWER | HXTR-5103 forts TRANSISTOR | ae Features HIGH Pygp LINEAR POWER 23 dBm Typical at 2 GHz HIGH Pig GAIN ‘11 dB Typical at 2 GHz LOW DISTORTION HIGH POWER-ADDED EFFICIENCY MATCHING CONDITIONS INDEPENDENT OF OUTPUT POWER RUGGED HERMETIC PACKAGE Description/Applications ‘The HXTR-5103 is an NPN bipolar transistor designed for hhigh gain and linear output power up to5 GHz, To achieve excellent uniformity and roliability, the manufacturing process utilizes ion implantation, self-alignment techni ‘ques, and Ti/PU/Au metallization. The chip has dielectric seratch protection over its active area and Ta2N ballast resistors for ruggedness. ‘The superior power, gain and distortion performance of, HPAC-200 PACKAGE OUTLINE the HXTR-5103 commend it for use in RF and IF applications in radar, ECM, space, and other commercial and military communications. ‘The HXTR-5103 utilizes the HPAC-200, a metal/ceramic, hermetic package with a BeO heat conductor, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD- 750/888 (Oy BIPOLAR TRANSISTORS a738 Electrical Specifications at Tease =25°C ae Test ‘Symbol | Parameters and Test Conditions MIL-STD-750_ Units | Min. | Typ. | Max. ‘BV80 | Collector-Base Breakdown Voltage atio-SmA | s001 v | @ BVce0 | Collector Emitter Breakdown Voltage at lo=1SmA [S011 wp a ‘BVeso | Emitter-Base Breakdown Voltage at l= 30,A wot | CY 8S Tee | Emitter Base Leakage Current at Vea=2V ‘3081.1 ry z ices | Collector Emitter Leakage Current at Vo 20847 mA 200 iga0" | Collector-Base Leakage Current at Vcs-20V 3086.4 nA 00 hee | Forward Current Transfor Ratio at Voe=18V. : iga30ma 20761 1% | a | 7% Pies Power Output at 148 Gain Compression a 26H 2 Gree _| Associated 148 Compressed Gain aL tn oa | Poxr | Saturated Power Output (GainSd8) eae aa Bs 2 | Power-Aaded Etticien } at 168 Compression Sie = od | imp | Third Order intermodulation Distortion | (Reference to eitner tone), at Po\PEP)=.2w 2GHz «8 0 Tuned for Maximum Qutput Power at 148 ‘Compression Voe=16V, lo=30mA 300u8 wide pulge measurement at <2% duty cycle. Recommended Maximum Continuous Operating Conditions (1 Absolute Maximum Ratings ymbel Parameter vue [vm Params Tin eso] Collecior to Base Vottapo™ “av Vos” | Colecor to Base Vorago BV Veto | Collector to Emitar Votage?! is Veco | oleter to Emiter Votaoe av eos | Emer to aes Voge! Soy Veoo | mtr to Base Voooe iv ic 0 Colector Curren! sO ma ts 5 Collector Curent 100 ma P| ota Device Desipation: 100 mW Pr | Tota Devs Dispation pris = Junction Temperature 00° 1) | duwenon vemperature sore Tera | Storage Temperstire 4500 Teraaino} Meximum Storage Temperature | 2506 S006 = tae Temperature (Sotaarng 0 saconds each tas _—_| +2504 Malye vesut ins reduction in device mean time Setweun fare pormanent damage to tis device IMTOE to below the design Qual 4 10" hove at he aC 5. See Figure 7 Yor derating condionsSain Si fv 8) eat 2 «68 FREQUENGY jah Figure 1. Typical Gaimax), Maximum Stable Gain (Gm), and Sate vs. Frequency at Vee = 18V, le 30m, ‘OUTPUT POWER Gm) AND OA 0) FREQUENCY (oH Figure 3. Typical Pigs Linear Power and Associated 168 Compressed Gain vs. Frequency at Vee = 18V. le= 20mA, vss FIGURE AKO CAI (6B foc ee = FREAUENer ici) Figure 5. Typical Noise Figure (Fmin) and Associated Gain (Go) ve Frequency when tuned for Minimum Noise af Vee ~ 1BV, lc = TOA. Typical Noise Figure (Fp) when tuned for Max Prog at Vce = 1BV, 1c = SOMA, See Reaeene ee ww ‘COLLECTOR CURRENT imal Figure 2. Typical Saxe vs. Current att and 2GHz (OUTPUT FOWER ain) ANE AAW lB) COLLECTOR CURRENT (nal Figure 4. Typical Pras Linear Output Power and ‘Associated 148 Compressod Gain vs. Currant at 2 GHz, ‘OUTPUT POWER OF EACH TONE dom) Btbesscszsses ri ee |NPUT POWER OF EAE TONE lan) Figure 6. Typical Two Tone Sra Order Intermodulation Distortion at 2GH2 fora frequency separation of MHz at Vee = 18V, fe = SOMA, a BIPOLAR TRANSISTORS40 TOTAL DEVICE DISHPATION int § Figure 7. Power Dissipation Cure for the = 125°C/W, Tinax = 200°C. Typical S-Parameters vee = 18v, 1c - 30ma Figure 6. Typical Pus. Tm. {Calculated from the ‘Average S-Parametors) in the 2 to 4GHz Frequency Range for Vee ~ 184, le ‘20m a oa en rea. (MHz) Meg. | Ana. | (@6) [Mao | “Ang. [ (a6) [Mag. [Ano | “Mao. | “Ano. 700) ova] 20 | or | to | ios | a7 | on | 7 | 088 | 2 200 om | 40 | 23 | 13 | ie | 32 | 00s | 8 | 098 | a7 300 ose | 87 | 106 | ga | 14 | 20 | 004 | oe | oa | 23 400 os | 2 | wz | ees | 130 | “2 | oo | 55 | 09 | -20 +300 oe | a6 | ize | rz | sax | 20 | 005 | 4 | 0 | -33 800 peo | -o | wo | zor | 119 | 25 | 006 | 4 | 075 | a7 700 oss | toe | 12 | 643 | 109 | 26 | 005 | 4 | o71 | 40 800 oss | aie | toa | sar | too | 24 | 006 | 32 | 06s | 42 800 oss | sae | ie | 538 | os | 22 | oor | 3s | oes | a4 +1000 ose | 331 | 138 | aor | os | -23 | oor | 3 | 0 | 46 1500 oa | oreo | 0 | asx | os | 22 | oo | a | 058 | 0 2000 oar | are | ga | er | 4 | “2 | ooo | 2 | 056 | a7 2600. oar | 35 | 71 | gar | 32 | 2 | of0 | | 056 | <3 3000 os | is | se | tos | 7 | 40 | on | as | os | oo 3800 os | yaa | a7 | an 2 4s | os | 10 | oso | -103 4000. oa | tas | 37 |otse | a | ci | ote |e ose | in 4500 oa | ua | a2 | tae | ze | 8 | ots 4 065 | “121 000 ose | so | 22 | i120 | 8 | 45 | o1 | «© | oes | -1a1 5500 oss | m4 ya | te | 33 | a4 | ox | 2 | 069 | 139 000. osr_| 6 | o7 | 190 | ee | 43 | oz | “7 | oeo | -s Typical S-Parameters vce = 15v, 1c = 15ma SH oa oa Frog. (MHz) Mag. | Ang. | (8) Mag. [Ang Mag | Ang | Meg | Ang. 100 ‘ora | a9} 191] 90s | 168 ‘an a1 | 098 | 6 200 oro | 37 | wee | ave | 52 ons | 63 | oo | 5 300 osr | a | rez | ore | ta dos | 60 | 090 400 oes | 40 | zs | 782 | 190 oo | ss | 08s 500 oe | 3 | tea | 690 | tat ons | 43 | 00 ‘800 oss | 95 | 10 | 632 | 119 005 | «3 | 076 700 os? ios, | 152 | 578 | tor | 2a | 006 | 40 | o79 00 oss is | 145 | 520 | tor | -2¢ | oor | a7 | 70 800 oss | 121 | 138 | 03 | os 3 | oor | 3s | oer +000 ose | soa | i2o | aaa | a | 33 | oor | 3 | oes 1800 oa | 16 | 12 | az | 66 | 22 | 008 | 2 | 060 2000 oas. | siz | eo | 2s | 48 | <7 | oo | 2 | os 2500 oas | wer | @3 | 200 | 3 zo | 0 | 33 | ose 3000 oas | 159 | so | 176 | te | 49 | on | te | 060 3500 oa | wo | sa | tse | oo as | ow | 32 | 060 44000 oas | is | 28 | aga | ta | a7 | ons 3 | oes 4500 oa | we | te | 124 | oe | te | ons 4 | oe 5000 os | 93 vo fase | a | 4s | oa | oA} ose +5500 039 | 7 | oa | 100 | 88 | +14} 02 | © | 070 8000. oar {| ss | os | ose | 67 | 3 | os | 2 | oss© HEWLETT jig PACKARD LINEAR POWER | rp sing soll TRANSISTOR Features HIGH Pygp LINEAR POWER, 29 dBm Typical at 2 GHz HIGH Pygp GAIN 9 dB Typical at 2 GHz LOW DISTORTION HIGH POWER-ADDED EFFICIENCY MATCHING CONDITIONS INDEPENDENT OF OUTPUT POWER RUGGED HERMETIC PACKAGE Description/Applications The HXTA-5104 is an NPN bipolar transistor designed for high gain and linear output power up to4 GHz. To achieve excellent uniformity and reliability, the manufacturing process utilizes ion implantation, self-alignment techni- ques, and Ti/Pt/Au metallization. The chip has dielectric scratch protection over its active area and TazN ballast resistors for ruggedness. ‘The superior power, gain and distortion performance of [ALL DIMENSIONS ARE IN MILLIMETERS OMCHES) HPAC-200 PACKAGE OUTLINE the HXTR-5104 commend it for use in RF and IF applications in radar, ECM, space, and other commercial ‘and military communications. ‘The HXTR-5104 utilizes the HPAC-200, a metal/ceramic hermetic package with a Bad heat conductor, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD- 750/883. 2 BIPOLAR TRANSISTORS 4142 Electrical Specifications at Topse=25°C Test La =e | Bvca0' | Collector-Base Breakdown Voltage at lo=10mA 3001.77 ve | ao s [-BVceo | Coltector-Emitter Breakdown Voltage at lo=S0mA | 3011.1" vp [ Bve80 | Emitier-Base Breakdown Voltage at fe= 10044. 3026.1" AW eas geo | Emitter-Base Leakage Current at Vea=2V 3063-17 AY 10 ‘ces | Gollector-Emitter Leakage Current at Vce=a2V 30411 nA 200 Tcaq” | Collector Base Leakage Current at Vos=20¥ 3036: ma 00 tee | Forward Curent Trani ato at Vee=t9V, Same aoe | Pree Power Output at 1dB Gain Compression , 2GHe| apm | 20 Gree _ | Associated 105 Compressed Gain ae a ele Psat ‘Saturated Power Output (Gain=SaB) 2GHz: dam ‘at . Power-Aaded Etficiency at 148 Compression. ‘26H * 6 IMD. ‘Third Order intermodulation Distortion ae {Reference to either tone), at PoiPEP)=0.7w 2GHz oe a } Tuned for Maximum Qutput Power at 168 Compression Voe=18V. lo=110mA "800.5 wide pulse messurement at <2% duty eycle Recommended Maximum Continuous Operating Conditions!) Absolute Maximum Ratings Symbol Parameter Value Parameter Lit Voeo” | Colecior ts Base Votape™ av ‘alist to Base Vollago ev Vesa. Collector to Emitter Voltage! aN ‘Voeo Collector to Emitter Voltage _ amv. Vero Emitter to Base Voitagei2 3.3V, Veso Emitter to Base Voltage x3 av te ‘BO Golector Goront 120.ma te | De Covector Curent 250 ma Pr. ‘Total Device Dissipation(3! 27W Pr Total Device Dissipation aw T°) duneton Peaperature 200" TL |. neion Temperature 00 Tera | Storage Temperature ae i6 Tsreauc| Maximum Storage Temperature | 250°C t20S = eed Temperature : — ‘Soldering 10 seconds each iend) | +250°C 1 Speration of hs device n excess of anyone ofthese conditions Thay Yo rosin &recucton im device Mean ine Bete Tare MTBF) to below the design goal of 1x 10) noure at = Se lasaumed Actuation Energy = 1 eV 2 Tense = 25°C 5 Soe Figure Yor deraung conditions* a 5 cc € : : e # eo é fal a A Fa ® J 5 Zz a zt 2 te itd af t Ea LINE A Li o 2 aan ee eo ° w ws 70 & FREQUENCY ce eOULEcrON CURRENT int Ss oO Figure 1. Typical Ganasy, Maximum Stable Gain (Gre Figure 2, Typical Sore vs, Current at 1 and 2GH2 a and Sere ve Frequency at Vee = 18. fo = THOMA. a Sal we @ | Nee = ov 3 a = : za Fe) 3 3 aw g eo poy : i” rome : i 24 7 = 7 z= + 6 8 "86 100, 150 PReQueney ore) cOLLEETON CURRENT In) Figure 9. Typical Prep Linear Power and Associates Figure 4. Typical Pep Linear Power and Associated 18 Compressed Gain ve Frequency a Vee = 18, {db Compressed Gain vs Current at Vee = 12 and ioe ona tev ate Ge : i : ; : ; 3 : * E a] ene oo 6 ees ference ele Fgue 5. Type Noe Figure ‘Fin and Associated figure 6. Typieal Two Tone rd Order intermodulation Ban tga We reqveney won tes to nim Nose Sanne ore recocnoysepraton afte Sey ceaeeeeh Neca Neie rou Fb) eee fave oma ‘when tuned for Max Praa at Vee = 18V, Io 110MA, 4344 TOTAL Device DIsPATION 0 I 108 oe ‘CASE TowPeRATURE Ce) Figure 7. Maximum Power Dissipation Curve for je = 58° CW, Tin 00°C. Typical S-Parameters vce BV, Io = 110mA Figure 8, Typical Ts, Pw (caleulated from the average S-parameters) im the 15 10 3.5GHe frequency range. at Vee" 18V, Io = NOMA on oH a Frea. (Mia) | Mag. | Ang. | (@8) | Mag. | Ang. Mag. | Ang | Mag. | Ang. 100) 04a 68 | ef ars | tao a a 200 ose | 100 | 26 | iss | 27 oo | 4 | oe | 46 300 oso | 32 | 24 | ws | 12 oo | 4 | oss | 58 400 ost | sae | tes | eas | 102 os | 96 | oar | -s6 500 oss | -155 | 19 | 702 | o4 cos | a | oa | 71 800 ost | 62 | 35 | 500 | os oo | a3 | 098 | 76 700 oe | +105 | 13 | sar | os oor | 33 | 035 | -80 800 os | rz | ws | 402 | 70 oor | aa | oas | a4 900 06 | 176 | wa | ats | 7s oor | a | 092 | a7 1000 os | 1 | us | sm | 69 008 | a | os | 0 1800 oe | 1 | a2 | 267 | 50 | 2 | o10 | a1 | oe | -104 2000 os | i | 60 | 19 | 33 | 49 | on | 90 | 093 | are 2500 og | 19 | 43 | tee | a | 47 | ore | as | 090 | 90 8000 oss | i | 20 | 140 | 2 16 | ote | 20 | o42 | 10 3500 oe | ms | te | 129 | 13 } 45 | o19 | 4 | 048 | ote 4000 oss | 1 | oo | 1 | 2 | 49 | om | 5 ost | 161 4500 os | ar 02 | 10 | 41 | sz | om | 2 | oss | 172 ‘5000 os | 7 | -o7 | oss | sa | x | 020 | +2 | os | 179 3500 oss | ss | 16 | oe | 7 | 40 | os | 22 | os |. tor 8000 oss | se | 23 | ow | 30 a | oar | 1 | oe | 155aware eackano LOW NOISE rey COMPONENTS TRANSISTOR | xte- 6102+ Features LOW NOISE FIGURE oe 2.84B at 4GHz, Typical (2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) HIGH GAIN Eo Pe ‘9.048 Typical Gain at NF Blas Conditions | ae i y IN RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction Description itecisere Tmecenclssoppisin enPAG TST oe of meeting the environmental requirements of MIL-S- me, ‘OUTLINE HPAC-70cT The HXTR-6102 is a lower noise selection of the 2N6617. ‘Gislcbuaweccaen aes Electrical Specifications at Tease=25°C QQ BiPotar TRANSISTORS Test Symbol _| Parameters And Test Conditions ‘MIL-STD-750 | Units | Min. | Typ. | Max. BV ces ‘Collector-Emitter Breakdown Voltage at 1c=1004A 3001.7 vi | 30 Iceo| ‘Collector-Emitter Leakage Gurrent at Vce=10V_ 304111 nA ‘500 lepo. Collector Cutotf Current at Vee=i0V_ 3036.4 nA 100 hee, Forward Current Transter Ratio at Voe=10V, io=4mA_ 3076.1" = | 80 | 150 | 280 Faw ‘Minimum Noise Figure f= 4 GHz (2N6617) 28 | 30 1.5 GHz (2N6617) a8 16 4 GHz (HXTR-6102) 25) 27 9246.1 G, ‘Associated Gain. T= 4 GHz ae. | 80 | 90 4.5 GHz dB 5 Bias Conditions tor Above: Voce = 10V. Ic = 4mA Max"? | Minimum Noise Measure (N6617) oi | 34 ce = 10V, Io = mA, f = 4GHz (HXTR-6102) 28 | 3146 Recommended Maximum Continuous Operating Conditions!" Absolute Maximum Ratings _Symbol Parameter Value ‘Symbol ‘Parameter ‘Lirait ‘Veao | Colecior to Base Voltage ai Voso | Golestor to Bave Vatage 38 vee | Colector to Emiter Votage2 iw Veco | olector to Emiter Votage av Vaso | miter fo Bane Voltage! tov eso | Eniterto Base Votage t5v e De Collector Curent toma te De Colector Gurren 20a fr | Tota Devoe Oisspation®) 180 mW P| Total Devee Dasipation so me Th | Junction Temperature 3 | dunes Temperature anor Tero | Stomge Temperature Taropen} Maximum Storage Temperttre | 250°C e teas Temperature in ‘Soldering 10 seconds eacn lead) | +250" IMMTBEY to below the design geal of 1» t0F hours at Ty = 175°C assumed Aewiation Energy "5 eV), Corresponds 1e maximum ating tor 2Ne6t7 5 Detate att mirc, Te 169" i fete fot : ao i i i i i i i i i i é Figure 1 Typical Gaye, Fm and Figure 2. Typical Fun and Associated Figure 3. Typical Sol? v, Bias at 4 Astosiatd Gm ve Frequency atvce «Gaines leat £ne for Vee TOV Git for tne atrsatOn/o102 Movie sama “Tuned tov Fo Typical S-Parameters ver = tov, tc=4ma s Sx Si 5 Freq. (MHz) ‘Mag. Ang. ‘Mag. Ang. ‘Mag. ‘Ang. ‘Mag. 100 0.917 a1 7.149 168 0.007 79 0.991 500 ove | 4 | oar | tas | 000s | 54 | aso 1000 oss | 0 | sor | a | ooa | 2a | over 1800 ose | 127 | geet a | oo | 2 | 763 2000 ose | uo | ate nm | aos 2s | 0758 2500 oso | -103 | 2646 ss | oo | 2 | o760 3000 oss | 7a | 2200 4 | 00 | 2 | o77 3600 seo | 10 | 1.008 a7 | oo | 25 | o70s 4000 ose | 73 | 1065 2 | oo | 2 | oote 4500 os | ier | 1.450 2 | 0053 | 2 | oso 5000 ose | io | 1048 1 | 008 | 23 | o60 8500, 0.500 182 1.210 © 0.060 22 0.880 000 ao | 48 | 1.078 | 006 | 20 | oz 7000 am | 12 | oer | -20 | ocee 18 | ose | -100Typical Noise Parameters eam Freq, (MHe) | (Mag ing.) | (Ohms) 6102 060 | danza faa. 148 1300 aoe | 1s87 19 ‘awa, | 1373 | tes avior | tore | 208 arene | 380 200 sso-tee | 21 334 20! 42 Figure 4, Typical Noise Parameters for the 2N6617/HXTR-6102 at Vee 10v, te 4 mA, Low Power Bias Performance ‘Bias Ver [te | Fuw | Ge | Rw ¥ ma | 68 | op | Ohms 3 025 | ge | 85° | eS 3 | os | ter | ter |. 25s 3 | too | nes | 187 | 88 Figure 5. Nolse Parameters at 1 GHz for the 2N8617 (HXTR-6101 Freauency ons 1000 Mie "1600 Miz 73000 Miz 600M Ye | te | Fun | G& | fav | G | Fuw [| G | Fam | Ge a ma | ao oe | eo | | o | 3° | oa | a2 | 35 | eer | so | 200 | az | ose | ay 2 | oso | sar | 137 | 200 | oo | 22s | 79 | 203 | 64 af vo [ease foe faze | ive] tre | oe | 2s8 | es Figure 6, Noise Performance vs. Frequency and Bias for the 2N6617 (HXTR-6101 QQ) BIPOLAR TRANSISTORS TYPICAL S-PARAMETERS Vee = 3V, Ic = 0.25mA fi Sis Sa Sa e Freq. (MHz), ‘Wag. ‘Ang. (a8) ‘Mag. “Ang. (68) | Mag. ‘Ang Mag. Ane "500 woo | az] as] ast] tse | ea | me] me | ome] se] ao joo | ae | we | a | ame | ter | ex | oo | S| os | | ae too | me | os | as | aa | too | coc | bo | 5e | se | So | Sus Boo so | at | a7 | ae | oo | aor | toe | mr | oe | 42 | om S000 aoe | me | ax | ge | S| ea | fos | 8 | soe | ae | a Su Sz « a) | Meo. Mag. | Ang. | Mag. 08 801 038 70 286. “220 va | Bee oo | 2 | oss 23 20 792, 085 35. 920 563 as | dar om | | S00 i 33 | be oe [7 | see 6 Su Siz {CL OO. a7] sar] ie] a8 | oa | we) are] ae ae 32 1.54 125 243 061 a 219 25 492 7 | 18 | joe | et | om | ot | on | 8 | oe te | ta | wm | see | om | ae | as | a5 tr | oe | se | tees | om | to | ee | 0 | oe48 HEWLETT: in PACKARD COMPONENTS LOW NOISE 2NGG18 & TRANSISTOR | (HXTR- 6103) Fa Features GUARANTEED LOW NOISE FIGURE 2.2. dB Max. at 2 GHz, 1.8 dB Typical HIGH GAIN 12.0 dB Typical Gain at NF Blas Conditions RUGGED HERMETIC PACKAGE Covfired Metal/Ceramic Construction Description The 2N6618 (HXTR-6103) is an NPN bipolar transistor designed for minimum noise figure at 2 GHz. The device utilizes ion implantation techniques and TW/PVAU ‘metallization in its manufacture, The chip is provided with scratch protection over its active area These devices are supplied in the HPAC-100, a rugged metal/ceramic hermetic package, and are capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STO-750/883. Sp Sie eine IMENSIONS UK MILMETERS CHES, HPAC-100 Package Outline Electrical Specifications at Tease =25°C Symbol | Parameters And Test Conditions Tost ‘ MiL-STD-750 | Units | Min. Vce = 10V, l= 3A, f= 2 GHz BVers | Collector Emitter Breakdown Voltage at lc = 100A] 9011.1" v | 30 Tero. Collector Emitter Leakage Current at Vcr = 10V 30817 nA 500 eno. Collector Cut Oif Current at Vex = 10V 30361 aA 100 hee Forward Current Transfer Ratio at Vee=10V.le-ama] _3076.1° =" [50 | 160 | 250 Faw ‘Minimum Noise Figure at 2GHz 9246.1 38 18 | 22 Gn. ‘Associated Gain ‘at 2 GHz ap | 110 | 120 Bias for above: Ver = 10V, lc = 3 mA ‘Mining | Minimum Noise Measure: 190 |” 285 "300 18 wide pulse measurement at < 2% duty cycle. ) soma ni se a conan tsa sanRecommended Maximum Continuous Operating Conditions!) Absolute Maximum Ratings Sra Pama wae waa Sa ia ‘Veao Collector to Base Voltage’! 26V Vceo Collector to Base Voltage ‘6 Veto | Sotetor to Emir Votage® tev Vete_| Colloctr to Emer Voage ay Vero | Smiter to Base Votage™ soy Yea | Enmiter to Baye Votage 18 ie De cotecor Curront toma 1 | eeatector Curent 20a Pr | Tota Denes Dsipaton® 10 mv fr _| Fomrdonae Desipaton 0 mi Tr | umtion femperstre ‘u0rc Ty | SGmien tempers “ore Tera | Storge Temperature arcte Terowas | Maximum Storage Temperature | 250°C “ae oO cas mrerane toe {Sotsering 0 seconds each lna_| +2807 Operation o tis deve in encets of any ane of ae cantons is INTBF’ to below tne Gesign goal of 1 10) hours at Ty=175"C sseumod Actwation Energy =1'5 BY), Corresponds 10 maximum ating 2, Tease = 5°0. 9, 018 —f14 FROME FIGURE ya) . Nos FOURE 8) ‘Gamexs AND ASSOCIATED GAIN 8) lo esa eae FREQUENCY (or) Figure 3, Typical Gaiman, Fass and Associated Gain vs. Frequency at Vee = 10V, ic = 3A, Operation in exces of anyone of these concitions may reat in permanent camage to thi devs Fam AND ASSOCIATED GAIN 8) ye “SDLLECTOR CURRENT ima Figure 2. Typical Faw and Associated Gain vs. Collector Curent at 2 GH2 for Vee = 10V (Tuned i ae ee 5 | 3 oat Ne : Be T 2 ¢ © . ns Figure 3. Typical Sore vs. Bias at 2 GHz QO) BIPOLAR TRANSISTORS 4950 Typical Noise Parameters Fra. (Ha) conn | ih ae se oe za | tes mmo | ease | can | i Figure 4. Typical Noise Parameters at Vor = 10V, to Sma Typical S- Parameter vce - tov, ic = 3 ma Sa Sat Sia Freq. (MHz) [| Mag. [ Ang. | (4) | Mag | Ang. | (a5) | Mag. | Ang. 100 oss | 115 | 162 | 646 | 1600 | -420 | oor | 770 200 aso | -230 | 171 | 743 | 1580 | -370 | 001 } 770 900 os | -340 | 164 | Gsa | 1490 | -340 | 002 | 660 400 083 | -440 | 159 | 626 | 1420 | -320°| 003 | 600 500 ava | -s40 | 156 | 602 | 1350 | -a00 | 003 | 550 600 075 | 650 | 154 | 591 | 1280 | -200 | 004 | 510 700 o71 | -730 | 150 | S62 | 1210 | 200 | 004 | 480 800. oes | 810 | 144 | 525 | 1180 | 280 | 008 | 480 900 06s | -910 | 140 | 499 | 1110 | -280 | 004 } 420 1000 cee | -a70 | 135 | 472 | 1080 | -270 | 004 | ato 1500, ose | 1290 | 114 | 371 | eo | -270 | 005 | a20 2000 050 | -1610 | 93 | 299 | 680 | -260 | 005 | 310 2500 050 | -1690 | 78 | 245 | 850 | -260 | 005 | 310 3000 ods | 1750 | 65 | 242 | 420 | -260 | 006 | 330 3500 asd | 1650 | 54 | 187 | 230 °| -250 | 006 | 350 4000 ose | 360 | 45 | 167 | 190 | -240 | 006 | 37.0 5000 oss | 1400 | 26 | 135 | -30 | -230 | 008 | a50 6000 cas | 1200 | 09 | 111 | 220 | -210 | 009 | a4wewuerr B rackano LOW NOISE aoa COMPONENTS TRANSISTOR | ,,;.. Features GUARANTEED LOW NOISE FIGURE Hf ss000 1 1.6 dB Max. at 1.5 GHz oO HIGH GAIN 14.0 dB Typical Gain at NF Bias Conditions RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction Description The HXTA-6104 is an NPN bipolar transistor designed for minimum noise figure at 1.5 GHz. The device utilizes ion implantation techniques and TW/PVAu metallization in its manufacture. The chip is provided with scratch protection over its active area ‘The HXTR-6104 is supplied in the HPAC-100, a rugged ‘metal/ceramic hermetic package, andis capablo of meeting the environmental requirements of MIL-S-19500 and the test requirements of MiL-STO-750/883 Electrical Specifications at Tcase=25°C ie 7 ae aston) 4 iMEhBons ALLOMETERS CHES. HPAC-100 Package Outline Tet Symbot_| Parameters And Test Conditions MiL-STD-750 | Units | Min. | Typ. | Max. BVecs | Collector Emitter Breakdown Voltage atic = 100uA| 9011.1" v_ | 30 Icke ‘Collector Emitter Leakage Current at Vee = 10 041.1 aA 500, les ‘Collector Cut Off Current at Vex = 10 ~ | 3086 DA 100. hee Forward Current Transfer Ratio at Vcr 10V,tc=3ma] 9076.1" =" [50 | 160 | 250 Fane Minimum Noise Figure 1= 15 GHe 32461 3B 14 | 16 a ‘Associated Gain zi {= 1.5GHz a8 [130 | 140 Bias for above: Ver = 10V, le = 3 mA Maint? | Minimum Noise Measure 445] 167 Voce = 10V; le 3 mA. 11.5 GHz a 500 wide pulse measurement at = 2% aut cycle. +A = 1009 (- ee :) Noize measre (ys) ste yam noe gue of ain cascaded chain of cet amo Fru and G, specie as power ratios NSISTORS Q BIPOLAR TRAI 51Recommended Maximum Continuous Operating Conditions [1 Absolute Maximum Ratings ‘Symbot Parameter Value ‘Synbel Parameter Tit Veso. | Collector to Base Voltage 28 Veso | Collector to Base Voltage: 36V ceo | Collector to Emitter Vottage'® tev ceo | Gollector to Emitter Voltage, 2ov Veso | Emitior to Base Voltage! tov ‘veso. | Emitter to Base Voltage 18y fe DC Collector Current® Oma te BC Collector Current 20 ma Pr Total Device Dissipation’) 160 mW a ‘otal Device Dissipation 200 mw Ts Junction Tempersture 200°C af Junction Temperature ‘300°C Tera—_| Storage Temporature 85°C to Taraquan] Maximum Storage Temperature | 250°C. +4200°C Lead Temperature Notes: ‘Soldering 10 seconds each lead) | 4250°C ‘ Shemon ol ne dren n ecaso ryana mat sonnet ‘Operation neces of ry one of these cnctions may e80%m NTF fo below te enim gos ol x70" hours at To T7S°C jermanent damage to the device lassumed Actvaton Energy = 15 eV) 2 Tense = 20 5. Date at 33 mW", Te= 18°, 1 mio —ha g g soot : Za | SR he 3 i ¢ a8 e% PE 3 e i , i ce a 4 1 se . || eg £4 NOISE FIGURE (Fun 1a 20 30 Ao *% 2 + GC . FREQUENCY Ce) cOLLECTONCunmen in Figure 1. Typical Guna Fam and Associated Gain ve Figure 2. Typical Fm and Associted Gain va, lc at 1.6 GHe Frequency a Vee = 10V" ie ='9 mA {or Vee = 180 Tuned for Ban : rary Pot tee . se cee oe COLLECTOR CURRENT imal Figure 3. Typical Sere vs. Bias at 1.5 GHz. 52LOW NOISE HEWLETT PACKARD HXTR-6105 COMPONENTS TRANSISTOR | ane Features LOW NOISE FIGURE 4.2 4B Maximum at 4 GHz Guaranteed HIGH GAIN 9 dB Typ. at NF Bias Conditions WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction Description ‘The HXTR-6105 is an NPN bipolar transistor designed for low noise at 4 GHz with high output dynamic range. This transistor also features high output power and high gain at the NF bias and tuning conditions. ‘The device utilizes ion implantation techniques and T/PL/AU ‘metallization in its manufacture,and the chip is provided with a dielectric scratch protection over its active area, ‘The HXTR-6105 is supplied in the HPAC-100, a rugged metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 and the tost requirements of MIL-STD-750/883. Electrical Specifications at Tcase=25°C en,o000) HPAC-100 Package Outline ‘MIL-STD-760 Symbol | Parameters and Test Conditions ati Min. | Typ. | Max. BVces | Collector Emitter Breakdown Voltage Io= 100A S01 30 teeo __ | Collector-Emitter Leakage Current at Vce=15V. 3041.1 500 leo __| Collector Cut OF Current at Veg = 16V 3036.1 100, hee Forward Current Transfor Ratio at Voe=1BV, lc=15mA 3076.1" 50 | 120 | 220 Fain | Minimum Noise Figure f24GHz ae | 42 5. GHz 3246.1 22 S, ‘Associated Gain f= 4GH2 ao | 90 = 1.8GHz 15.0 Prog | Associated Power Output at 148 Compression at 4 GHz Ve = 18V; Ig = 15ma, 4 Manin? | Minimum Noise Measure Vee = 15V, Io= 18mA, f= 4 GH2 42 | 47 "300 us wide pulse measurement at = 2% duty cyte. “May = 10 Log ( . oe Free | noise measure (Muni the aystem note igure a an intnte caseaged chain ot gentle! amplier stages. =) Fyn and Gy spaciied a8 power rationTypical Noise Parameters ie a Faw Freq. cana) | (ep/Ang.) | (Orme) | (6) oo] aesroer | 2509] <0 sso | ener | zor | 120 zoo | seve | mass | 130 Figure 4, Typical Noise Parameter t Vee = 10 le = 9 mA Typical S-Parameterss vce = tov, 1c = 3ma 5 aa Sa Sa Freq. (MHz) | Mag. | Ang. | (4B) | Mag. | Ang. | (dB) | Mag. | Ang. | Mag. | Ang. 100 og | ais | w2 | 646 | ven0 | 20 | om | 770 | 089 | -40 200 ogo | 220 | aa | tas | tse0 | a0 | oor | 720 | oa7 | -20 300 ose | s40 | 104 | 656 | 1490 | a0 | o02 | 680 | o94 | 120 400 oas | “440 | 189 | 626 | 420 | 320 | 003 | soo | ose | -160 500 a7 | sso | a6 | 602 | 1050 | 200 | 003 | ss0 | oa | 180 600 075 | 60 | 14 | 501 | 1280 | 00 | 008 | sto | oar | -20 700 o7 | 730 | 180 | sez | s210 | -290 | 008 | ao | oas | -240 200 ose | -o10 | 4 | 525 | t160 | -280 | 008 | «50 | 08s | -250 900 oss | 9x0 | wo | 490 | s1x0 | 280 | 004 | «ao | oas | -270 1000 ose | 70 | 195 | 472 | 1060 | 270 | 00a | aro | oss | -280 1500 osz | 1200 | s14 | a71 | exo | 270 | 005 | s20 | ora | 350 2000 050 | -151.0 93 2.93 69.0 26.0 0.05: 31.0 0,72 43.0 2500 oso | 1690 | 78 | 245 | s50 | 260 | 005 | sto | oss | sto sooo | oa9 | iso | 65 | 232 | «20 | -260 | 00s | 330 | oss | -s70 3500, oss | too | sa | ter | 290 | 250 | 006 | aso | 04s | 80 4000 osz | isco | 4s | ter | 10 | 260 | 008 | avo | 068 | -760 5000 053 140.0 26 1.38 3.0 23.0 0.08 35.0 O71 96.0 e000 | ows | 1200 | 09 | 111 | 220 | 210 | aoa | sso | 079 | -t120 QQ BIPOLAR TRANSISTORS 53,Recommended Maximum Continuous Operating Conditions} Absolute Maximum Ratings (aymber Paameter Vane Saba Poamaer Ta Wess | ‘Gallctor to Base Voting? av. Vesa | Coletoro Bas Volage =v Vero | Goletor to Emiter Votage ‘ev Veco | Collector to Emitter Votage 2 Veos — | Emiter to Sane Voge tov Yess | Emir to Base Votage tev ie De Collector Current a6 ma : DC Collector Curent 70ma. Pr | Tota Device Disipation®! 40m Pr | Total Device Dissipation om u Junetion Tamertare 200°C u dunelon Temperature ‘wore Tero | Storage Temperature 45010 Terapian| Maximum Storage Temperature | 250°C ed 2 Lond Temperature (Soldering, to seconds ench lend) vase 1 Speraon of hie device n excess of anyone of these contons is Iie to reaut in eduction n device mean time Satwoen false (TBE to below tne design goal of 4x10" hours at Ty T78"C {assumed Actvation Energy = 15 eV 1. Dera a 48 mW/*C, Te® 106°C, . (IBY, IS mA i a sbogavigonn ; : ot a i s 2 8 : An § 3 = Oh i 2 at El 3 == "NOISE FIGURE (Faani) > i : eS i schacrcvie v1 von) % CI acute) cLLseTORCUMRENT Faure 1. Typical Fa an Figure 2. Typical Fun and Peal Bain Potency Eeodaiod Gain ve a4 Ge tor Voe=19V Tuned for Fu i Figure 3, Typical Sete vs. Current ata GHz a BIPOLAR TRANSISTORS56 Typical Noise Parameters a ®y ¥, reg. cms) | (Mag-/ang) | (ohm) | (a wooo | zee | eer 1180 150 | sesaze | sas 215 2000 42ers: | 506 205 soo | sav-aser | ese 301 4000 | woer-105° | 1550 3st 000 | seato7 | 60.14 475 Figure 4. Typical Noise Parameters at Vce=18V, Io=15mA, Typical S-Parameters v,. BY, Ie = 15mA a Sn Si Freq. (mits) |" Mag. | “Ang. | te) | Mao. | Ang. | (a8) | Meg. | Ang. 100 oes | -s2 | 290 | aa | ise | -sa2 ) oor |e | om | 16 ‘500 ose | -199 | zo | 125 | 11 | -ar7 | 009 | 4 |. oss | a3 1000 ose | <0 | 15 | 7: | 90 | -296 | 009 | 4 | oa | a7 1800, oss | 77 | ia | 454 | 65 | crs | aos | 4a | oar | oi 2000 oe | 15 | 1s | sae | 63 | 565 | 006 | 50 | o47 | 60 2500 oe | wo | aa | 275 | 43 | “240 | 009 | sx | ow |e ‘3000 oz | we} 72 | 228 | a2 | -22r | oor | se | 050 | -o8 3500, oe | ii | s7 | te | a | 214 | om | 4 | om | a0 4000 oe | 32 | 4 im | 1 | 200 | 0 | 4 | os7 | 25 4500 oso | ws | as | 150 | oo | “too } om | 45 | 60 | 04 ‘5000 oe | ms | 26 | 135 | 9 | -172 | ore | a | oss | -102 ‘5500 om | v2 | 18 | 133 | -2 | 8 | on | 35 | 6s | -112 8000 ose | 10 | o9 | rat | -29 | -61 | one | 31 | oer | -122HEWLETT hp, PACKARD LOW NOISE HXTR -6106 rere TRANSISTOR |... Features GUARANTEED LOW NOISE FIGURE 2.7 dB at 2 GHz Max., 2.5 dB Typical 3.8 dB at 4 GHz Typical HIGH ASSOCIATED GAIN 11.5 dB Typical at 2 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction Description ‘The HXTR-6106 is an NPN bipolar transistor designed for, low noise up to 6 GHz with wide dynamic range. This transistor also features high output power and high gain at the NF bias and tuning conditions. The device utilizes ion implantation techniques and ‘Ti/Pt/Au metallization in its manufacture, and the chip is, provided with adielectric scratch protection over its active The HXTR-6106 is supplied in the HPAC-70GT, a rugged metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 and the test requirements of MIL-STD-750/883, 2 BIPOLAR TRANSISTORS OUTLINE HPAC-70GT Electrical Specifications at Tcase=25°C WiL-S10-750 ‘Symbol | Parameters and Test Conditions Feat Method | units | min. | typ. | Max. ‘BV ces _| Gollector-Emitier Breakdown Voltage at Io = 10020 por fv | 30 Teeo____| Collector-Emitter Ceakage Current at Vce = 16¥ 301.1. | nA 500 leno" | Collector Gutott Current at Vea = 18V ‘30081 [oA 100. Thre | Forward Current Transfer Rallo at Vor = 18V. lo= 15mA sore | = [50 | a0 | 20. Fan | Minimum Noise Figure 12 Ghz 25 | 2? 4GHe 38 ses | a8 Gs | Associated Gain Factz Too pis. 4GHe 20 Pree | Associated Power Output at 148 Compression ache 8m 8 Vee = 18V, lem 10mA Mir | Minimum Noise Measure Vee = 18V, 16 = 10mA, t= 26h2 co 26 | 30 *300,8 wide pulse measuremen uty eyele 87Recommended Maximum Continuous Operating Conditions!" Absolute Maximum Ratings ‘Symbor Paamewe Ww] ‘Symbol ae Tint Veso | Calectoro Base Votage™ av Vso | Collector to Bise Votiage av Veto} Collector to Emitar Vottage? ‘ev Veco | Golector fo Emitar Vattage aay veso | Emiter to Base Votogo2 tov Vaso | Emit to Base Voltage +8v ie 1DG Collector Curent 38 mA e 6 Collector Curent roma Pr | Tola Device Dissipation: sonw ‘otl Device Osipation 300 mW Te | unwtton Tentperatirw z00"c Joon heme 2006 Tera | Storage Temperature $ec10 Maximum Storage Temperature | 250°C $2006 Used Temperature (Soldering 10 seconde each lena) | +250°0 lassumea Activation Energy = 1 eV) 2 Tease = 25°C 5 Derate at 84 mw"C, Te 2 117°C Associate A Figure 1. Typical Noise Figure (Fun) and Associates Fa 8 Oya er Facoueney ite) Gain vs, Frequency. 58 ose PURE Pani COLLECTOR CURRENT tl Figure 2. Typical Noise Figure (Fyn) and Associates Gain vs, Current at 2 GHz and 4 GHz at Vce = 15V Tuned for Fun @LLEETOR CURRENT im Figure 3, Typical Save ve. Current at 2 GHe.Typical S-Parameters vce toma 3 Sa Su S22 Frea. (WaH2) Weg. [ Ang. | (@e) [Mag [Ano _[ (a8) [Mag | Ang. [Mag [ Ang. 700 o7 | 36 | e« | 208 | ier | sea | oo | or | oso | 12 200 or | "0 | 256 | 10 | 39 | 340 | 0020 | 55 | oar | 2 ‘300 oy | 25 | 261 | 160 | 25 | 320 | ooas | as | on | 26 400 oo | 13 | 27 | 36 | 18 | -310 | oom | 41 | 06s | 20 ‘500 ooo | “26 | 23 | s6 | 108 | “30s | 009 | a | ose | or 800 oss | 196 | 201 | 109 | we | 200 | oos2 | 36 | 086 | “33 700 osr | “a3 | too | ao | or | -208 | ooss | 35 | ose | 34 200 oes | sao | wo | 79 os | 204 | oom | 35 | ose | 35 900 ogs | 194 | i70 | 70 | ox | -203 | ooas | 34 | oss | 26 +000 oe | 450 | tex | os gs | 299 | cos | 3 | oss | 26 +1500 oss | 47a | we | 43 m | 270 | 000 | 3% | 04 | ar 2000 oss | 7 | is | 33 et | 271 | oo | 4 | oso | or 2500 oss | 360 | 85 | 26 so | “262 | oom | «2 | oso | 60 ‘3000 og | 19 | 70 | 22 9 | 250 | cose | 4 | ose | 67 3500 oe | 16 | 56 | t0 a | Bar | ooge | 46 | ose | 7 4000 oes | 162 | 45 47 2 | 231 | com | a | ogo | a5 4500 oso | 12 | se | 18 x2 | 222 | oo7s | 4 | o60 | 02 +5000 on | i | 25 | 33 4 | 212 | cow | 4 | oe2 | 02 500 om | wo | te | 42 5 | 205 | cos | 42 | oss | an ‘8000 ore | iz | 9 a1 | a | “ez | otos | 42 | oe | “20 8500 or | 321 [00 | 40 | 2s | ret | orm | ge | 07s | oa8 @@ BIPOLAR TRANSISTORSNoTESApplications -— for Silicon Bipolar — Transistors Two Telecommunications Power Amplifiers for 2 and 4 GHZ ........ eee e seen eee 62 A Low Noise 4 GHz Transistor Amplifier Using the 2N6617 (HXTR-6101) .........ee eee ee 70 (QQ) BIPOLAR TRANSISTORS62 HEWLETT hy PACKARD COMPONENTS APPLICATIONS FOR SILICON BIPOLAR TRANSISTORS Two Telecommunications Power Amplifiers for 2 and 4 GHz Using the HXTR-5102 Silicon Bipolar Power Transistor (Portion of Application Note 972) POWER AMPLIFIERS FOR THE TELECOMMUNICATION BANDS ‘The HXTR-5102 is a good candidate for power amplifiers in the 17 to 2.8 GHz and 8.7 to 4.2 GHz telecommunications bands. Based on the data sheet specifications, the following performance goals are realizable for such amplifiers: Power at dB Gain Compression = 0.5 Watt Gain at 1 dB Gain Compression = 10 dB (2 GHz) = 6.48 (4 GHe) Gain Flatness = 2B Input and output SWR’s should be reasonable but they need ‘ot be perfect, since the use of circulators or the balanced ampilier configuration is assumed, POWER CONTOURS Figure 1 isthe output power contour graph for the HXTR-5102 transistor at 2 GHz. The output loading was changed and the loo! of points of equal Pus were plotted. The input was matched Conjugately at allimes. Note that the points of best Pray and output conjugate match were close, Figure 2s the input power contour at 2 GHz. For this measure- ‘ment, the output was conjugately matched at al mes. The input tolerance to mismatch was much less severe than the ‘output tolerance. The points of input conjugate match and best Pass were close S-PARAMETERS—SMALL OR LARGE SIGNAL? Gain performance is indicated by the S-parameters. Whether ‘small oF large signal S-parameters are to be used depends (on the linearity ofthe transistor AA simple linearity test was performed with the HXTR-5102, transistor Using the Pagy test as shown in Figure 2, the tran- sistor was simultaneously conjugately matched for small signal. The transistor was then driven into gain compression of 1, 2 and 9.9 dB. In each case the input and output were retuned from the small signal match for better gain, For the + and 2 dB gain compression cases, less than 0.2 dB gain improvement was observed. For the 3.3 d8 gain compression case, an increase of 0.2 dB of gain was noted. This was a {900d indication of the lack of change of input and output, impedances of the transistor under gain compression, ht was theretore decided that the amplifier circuit designs ‘would use smal signal S-paramotors, CIRCUIT DESIGN OF THE 2 GHz AMPLIFIER The sequence of circuit design is as follows: Design of output circuit for power Design of input circuit for gain and gain flatness. Computer circuit analysis and optimization. Conversion to microstrip on Duroid’ Output and input circuit loading check, cages Figure 1. Output Power Contour at 2 GHz. Vee = 18V, fom 110 ma,The output circuit was designed at band center 2 GHz, ac- cording to Figure 3. The 50-ohm output load was transtormed to a resistance of 13.6 ohms by a quarter wave transformer Figure 8. Output Matehing on Smith Char 2H, ‘The characteristic impedance, Z,, of the quarter wave line ‘was given by 2, = VE0X TSS = 26 ohms A rotation by a 50-ohm transmission line of 32° electrical length completed the impedance transformation. The output circuit schematic is shown in Figure 4, Pa Figure 4. Output Circutt for 2 GH2 Ampito. ‘The input circuit was designed at the upper band edge, 2.3 GHz. The gain ofthe transistor was lowest at 2.3 GHz 50 Conjugate match was used at this frequency at the input. The progressive input mismatch from 23 down to 1.7 GHz should help to level the gain, ‘To calculate the input conjugate point at 2.3 GHz the reflec tion coeficient of the output circult was noted. This output loading was mapped by the S-parameters ofthe transistor at 2.3 GHz to an input impedance, the conjugate of which was. the required input circuit loading. Rellection coefficient of output circu, 2.3 GHz : 0.56/95" ‘Tansistor S-paramoters at 2.3 GHz : Sy = 0582 146° Sy = 2182 -5.8° Six = 0.076 7 ~15.0° Su =057Z ~127° Load o source mapping fomula (rom HP-67 EE. Pac 1} Tn [- + Sah noo input conjugate match where Tas the and. * represents the conjugate. ‘The input conjugate match, I'ys, at 2.9 GHz, was calculated tobe: 0.60£ ~134° (42 90 in shunt with ~j 31 2). Figure $ shows the input conjugate match point in admittance ‘Smith Chart coordinates. A shunt capacitive element brought the 50-ohm input load very closely to the conjugate point The required shunt capacitance at 2.3 GHz was 31 ohms. An ‘open stub transmission line of characteristic impedance Z, land electrical length 45° (A/8) has a reactance equal to =| 2, tan 45°. in other words, it has a capacitance equal 10 Z,. So a shunt stub with Z, equal to 31 ohms was chosen {or input matching. The resistive component was close enough 10.50 ohms and was not matched. Figure 6 is the schematic of the input circuit. @@ BIPOLAR TRANSISTORS Figure 6, Input Matching on Smith Chart at 23 GHz Figure 6. Input Circuit for @ GHz Amplitier. 636a The circuit was analyzed on the computer-aided design rogram COMPACT? The amplitier performance was as follows: input ‘Output Retlecton | Reflection (GH | Coomeson | Cooma 17 |O7SZ180"| 0382 18 20 | osez1s| 008 —o 23 | 0102 169"| 058-116" Input stub 2, = 310,45" at2.3GHe Output ines : Z, = $012, 32° at 2.0GHz Z, = 260,90" at 20GHz ‘Table 1. intial Ampitier Performance at 2 GHz Keeping in mind the main amplitier performance criteria were ower output and gain: and that the best Pye point a the out Put was very close to the conjugate match point, the circuit, ‘was then optimized using COMPACT with equal weighting factors for output reflection coeficient and gain. The variables ‘of optimization were the characteristic impedances of the three transmission line sections. The optimized ampitior performance was as follows: AMPLIFIER PERFORMANCE ‘The ampitir was fabricated and the measured performance in gain, power output, input and output return loss and reverse. isolation, all at + dB gain compression, was indicated in Figures 8,9 and 10. Tuning of the ampltier did not improve the overall performance. Figure8. Gain at 1 68 Gain Compression vs. Frequency at 2GH2, Vor ~ 18V. | put ‘Ouput | Small Fi Refiscton | Refection pa | _k Gren” | Cowncont | Coercion | cpt ab) | Faber > 17 [ovezter|oasz ioe] 983 | 108 20 josagiaz|or9Z 2e°| 1075 | 4.15 _ =p 2a _lorazrs|ossz -oe| oes | 121 i Input stub = Z, = 90.40, 45° at2.9 GHe Output ines : Z, = 45.20, 32° at 2.0GHz oF 2, = 27.40, 90° at 2.0GHz Table 2. Optimized Amplifier Performance at 2 GHz, a 5 ‘The amplifier performance on paper was observed to be sats factory. The next step was to convert the transmission lines, to microstrip lines on Duroid, the circuit board material used for this amplifier Card 14A trom EE Pac 1 for the HP-67, calculator was used for the conversion. Figure 7 shows the dimensions of the various circuit elements. TI ae =) Lay ‘A cnet oom oneness Figure 7. 2 GHz Amplifier Circuit Dimensions on Duroid Figure 8. Power Output at 1 4B Gain Compression ve Frequency at 2 GH2, Vee = 18V, le 110 ma, i oe i I 3 Figure 10, Input and Output Return Loss; Reverse Isolation, at 1.68 Gain Compression vs. Frequency at 2GH2, Vee = 18V, lo 110 mA,Two tone intermodulation distortion was also measured {and plotted in Figure 11, | sesaem, | ee * cen / i pe fs E xf eS 3 Figure 11. Two Tone intermodulation Distortion Performance at 2 GHz, Vee = 18V, le = 110 mA BIAS AND DISTORTION ‘The de bias condition of 18V and 110 mA was chosen for best ‘gain and Pye performance. It was, however felt that the 110 mA collector current might be too high for symmetrical ccurrent clipping A linearity test was performed. The collector-emiter voltage ‘was set to 16 volts, The transistor was subjected to a small ‘signal input and kept simultaneously conjugately tuned, while the collector current was varied. The gain was recorded. The collector currents at 1 dB gain fall of points were noted, Table 3. Sang} Te may 118 710 109 20 109 162 Table 3. Small Signal Gain vs. Collector Current at 2 GHz, Vee = 18 It appeared that for symmetrical clipping a current of about 90 mA, halt-way between 20 and 162 mA, would be ideal ‘The transistor was biased to 18V and 90 mA, but the gain ‘was slightly lower The collector-omiter voltage was raised to 22V to restore the gain. The same linearity test was per- formed at 22 volts. The result is indicated in Table 4. A mid: point current of 85 mA was arrived at. ‘Gan (eB Tema} 122 & ne m2 48 ‘Table 4. Small Signal Gain vs. Collector Current at 2 GHz, Vee = 22V AMPLIFIER PERFORMANCE WITH LOW DISTORTION BIAS ‘Two tone measurements wore made with the bias of 22V and 65 mA, Figure 12. Siniicant Improvement of rs ore torton was observed at high ouput aves. Tho td order Intercept which was obtain om ow love signal extol Son remained the same The AM 10 PM convosion ofthe amples plot in Figure 18 =| j INPUT POWER OF EACH TONE Bm) Figure 12. Two Tore intermodulation Distortion Performance at 2 GHz, Vee = 22V, le = 85 mA Figu Vee 13. AM to PM Gon 1BV. ie OMA ions. Input Power at2GH2, Q BIPOLAR TRANSISTORS 6566 CIRCUIT DESIGN OF THE 4 GHz AMPLIFIER ‘The design of the 3.7 to 4.2 GHz amplifier was made easier {due to the internal input matching in the transistor around, 4 GHz, Figures 14 and 15 are the output and input power contours. Figure 14. Output Power Contour at 4 GHz, Vee = 18V, Ion 110 ma, Figure 18. Input Power Contour at 4 GHz, Vee = 18V, lem 130 ma Output matching is shown in Figure 16. The 60-ohm impe- dance was matched to the output resistance of 5 ohms. The. ‘small output reactance was ignored and not matched. The output circuit schematic is shown in Figure 17. The input power contours were large circles, indicating the relative insensitivity of power output performance to input tuning, a desirable feature. Together with the internal input matching, it was felt that external input matching was un- necessary for this amplifier, ‘The circult was converted to microstrip dimensions. ue to the simplicity of the circuit, computer analysis and optimiza: tion was not performed, Figure 18 is the inital amplifier rout. Figure 17. Output Circuit for 4 GHz Amplifier. we Figure 18. 4 GHz Amplitir Initia Circuit Dimensions ‘on Ouro Tuning and Amplifier Performance ‘Tuning was performed on the amplifier The criteria for tuning were: fist, Pys performance; then, gain and gain flatness. Figure 19 is the amplifier in its final form. pone | \ Figure 19. 4 GHz Amplifier Final ‘on Duroia, ireult Dimensions Gain and gain flatness at 1 dB gain compression are shown In Figure 20. The gain flatness is good, even in the absence ‘of external input matchingSer 1 Heer Lae | Figure 20, Gain at 1 68 Gain Compression vs. Frequency at 4 GHz, Vor = 18V, Io = 110 mA ‘The power at 1 dB gain compression is shown in Figure 21 input and output return loss, and reverse isolation are shown in Figure 22. The output was tuned to 4.1 GHz to obtain equal power output performance at both band edges. 1 4B Gain Compression vs. Figure 21. Power Output Frequency at 4 GH2, Vee Figure 22. Input and Output Return Loss, Reverse Isolation, att 3B Gain Compression, vs Frequency at GHz, Vee = 18V, Ie 110 mA. Bias and Distortion Two tone intermodulation distortion is presented in Figures. 23 and 24. The best power output bias is 18V and 110mA. The best distortion bias is 22V and 85 mA. As In the case of the 2 GHz ampiter the intercept point is unchanged while inter. ‘modulation distortion at high output levels is significantly im- proved Figure 23. Two Tone intermodulation Distortion Performance at 4 GHz, Vee = T8V, lo = 110 mA, if ite Figure 24. Two Tone Intermodulation Distortion Pertormance at 4 GHz, Vce = 22V. lo = 85 mA. a2 BIPOLAR TRANSISTORS a‘The AM to PM conversion performance of the amplifier is, shown in Figure 25, Figure25. AM to PM Conversion vs. input Power at GH2, Vce™ 18V, 1¢= 110 ma, Bias Circuit ‘The same bias circuit was used for both amplifiers. The ‘schematic isin Figure 26. Care should be taken in the circuit layout to avoid oscillations in the bias circuit Figure 26. Active Bias Circuit for both the 2 GHz andthe 4GHz Ample. Bias Insertion ‘The bias insertion points are points of low impedance. If such a point is electrically disturbed (for example, by a pair fof hand-held tweezers) litle or no change of amplifier performance is detected. These points were found and used {or the 2 GHz amplfiec Due tothe compact size of the 4 GHz ‘amplifier completely “null” points were not found and phy. sicaly convenient points were used instead. The RF chokes: were made of § to 10 tums of #32 gauge magnet wire, wound to a 0.1 inch coil diameter Quarter wave line lengths were ot used, AMPLIFIER CONSTRUCTION ‘The amplifier was constructed of RT/Duroid, 1/32 inch thick, with one ounce copper clad on both sides. The circuit was hand cut and etched in ferric chloride. All dc blocking capac itors used were 1000 pF chip capacitors made by Dielectric, Laboratories, Ine, part number Oi 68 102 K 300 L. The two amplifiers, minus the bias supplies, are shown in Figure 27. Figure 27, Top View of the 2 and 4 GHz Amplifiers REFERENCES 1. Rogers Corporation, Rogers, Connecticut 06263, (203) 774-0605, 2. Hewlett-Packard, 1000 N.E. Circle Blvd, Corvallis, Oregan 97330 3. Compact Engineering, in, 1088 Valley Yew Court, Los Altos, Caltorna 94022. 4. Dielecte Laboratories Jersey 07006. 5, Howiet-Packard Application Note 95-1, “S-Patameter Tach rigues for Faster More Accurate Network Design’. September 1968. 6. Hewlot-Packard Application Note 154, “S-Parameter Design’, Api 1972. 7. Hewlett-Packard Application Note 987, “A Low Nose 4 GH2 “Tansisior Ampitior Using the HXTR-6101 Slicon Bipolar Wan sistor", May 1976, Ine,, 64 Chnton Road, Fairfield, NewA Low Noise 4 GHz Transistor Ampli r Using the 2N6617 (HXTR-6101) Silicon Bipolar Transistor (Portion of Application Note 967} DESIGN DATA Plotted in Figure 1 the typical noise figure, noise measure” and associated gain of the 2N6617 (HXTR-6101) product as, 8 function of collector current at 4 GH2. From Figure 1, it can be seen that the minimum noise mea: sure of the device is obtained at a collector eurrent of 3 to Fa 880M Eee Figure 1. Typleal Note Measure (Mya, Nols Maasure (Fyan) ad Associated Gaia vs. Collector Current. 4:mA. However, the associated gain at noise figure is higher, at 4 mA, therefore a bias point of Voce = 10volts and Io 4 mA is chosen for low noise measure operation. At these bias conditions, the scattering, gain‘) and noisel2) param= eters for the particular device used in this amplifier are: Scattering Parameters Gain Parameters Sy = 0.552/168° k=1.012 Siz ~ 0.049/23° Ga(max) = 14.7 dB Soi = 1.681/26" Tyas = 941/-154° Spa ~ 0.839/-67° Fa. = .979/70° Noise Parameters Fin = 2.5.48 To = 475/166" n= 35 ohms Using the Gain and Noise Parameters above, the avail able power gain and noise contours are plotted in Figure 2. The contoursare mapped onto the source impedance plane(2) “The system noite figure ofan infinite cascaded chain of identea! amplifier stages. For further explanation, se Howlett Packard Ap: lication Bulletin #9 Eman F Monn = 10ogy0 [1 +S Figure 2, Nolse and Gain Contours Taking closer look at the Noise Contours, itis seen that the ‘optimum source reflection coefficient (Io) for minimum noise figure (Fyain) is not very sensitive to matching error The diameter of the first noise contour corresponds to a change in reflection coetficient magnitude of 37 with a noise figure increase of 0.148. This characteristic of the 2N6617 is very advantageous to circuit designers trying to match for minimum noise figure. From the two sets of contours, it ‘appears that the associated gain at minimum noise figure will bbe approximately 11 dB with the output seeing a conjugate match, ‘Since the design goal isto construct alow noise amplifier, the ‘optimum noise measure bias condition is selected. There is also an optimum bias condition for maximum gain and an- other for output power. Even at the optimum noise mes: sure bias there are trade-offs between noise figure, gain and, power output due to source and load impedance. ‘At the optimum noise measure bias of Vce = 10 volts and le = mA, the source and load reflection coefficients for low est noise figure, maximum gain and greatest power are tabu lated and plotted in Figure 3. Figure 3 is plotted for the particular device used in this amplifier design. The source and load reflection coefficients are mapped onto the source or load impedance plane. 2 BIPOLAR TRANSISTORS70 Figure 2. Matching Tra tts INPUT MATCHING NETWORK ‘The main purpose of the input matching network is to pro- vide the optimum source impedance for minimum noise fig Ure. The basie design philosophy in realizing this network is 1) Convert the optimum source reflection coefficient (To) to impedance 2) From this impedance determine the equivalent admit- tance 3) The susceptanee component is realized witha short cir euitedeighthwave (3) length stub 4) The concluctance component is realized with «quart weave (2) length impedance transformer ‘The realization and Smith Chart mapping for this input matching network is described below and shown in Figure 4. 1) The impedance Zyve, corresponding to ['p = 475/166" I = eioiso i (2iolsin jt) 50 NE" TEURGI2-2INplGos [Mp * 1+ ily?-2 INI [Fo Zur > 18.0 +) 5.35 3) A short circuited stub less than a quarter-wave length long looks ike a shunt inductor of impedance Z = Zo tan BR. Hence a short circuited stub that is an eighth-wave length long looks like @ shunt inductor of impedance jZo where Zo is the characteristic impedance of the stub. Hence pe Zo = gigp * 65.8 ohms, 4) Since the driving source impedance is 60, a quarter-wave transformer of characteristic impedance: Zo = Vi60) (79.6) = 31.312 ‘completes the input matching network. ey Figure 4, Input Matehing Network OUTPUT MATCHING NETWORK With one of the design goals being an output VSWR of less, than 1.5:1, the output matching network is designed to pro- Vide a conjugate match with the source impedance, Zyr. The basic design procedure is: 1) Calculate S'29, the output reflection coetficient with the source reflection coefficient being Tp. 2) Provide a conjugate match for the output with a load re- flection coetticient equal to S'9°. (Fi = S'z2") 3) The matching section could be realized with a shunt stub and a series transformer similar to the input network, However, in order to increase the tuning capabilities of the network, an extra section of matching is used,‘The realization and Smith Chart mapping of this output net- work is described below and shown in Figure 5. 1) From the Parameters on the device, S'zo can be caleu: lated as follows: S22" Saat Sip = 846 [-72° Now, providinga conjugate match to S79" for a good out- put VSWR, the load reflection coefficient (I) should be Ty = 946 (72° ‘A problem with the output is the relatively high Q, This can cause problems in supplying a conjugate load match to obtain a good output VSWR because of sensitivity to small dimensional changes. Calculating this output Q. ives us, 2) (S32) = 5.65 ih his dominant, the ealeltd 3&8 bandwith te t00x8" ‘This bandwidth equals 720 MHz with a center frequency (fo) of 4 GHz 3) A.0.61 em (280 = 59°) equivalent air langth of Zq=602 transmission line was added to the output to provide an output soldering area, The rotated output reflection co- efficient i Py = .846/-131° ‘The corresponding impedance, 24, is = (102) 60 (2171 Sip 04) 80 VF IT 2-21 y1Gos [Fy © 1 1Ty/2-21P Cos [Fy 2) = 5.03 -j 22.6 3 = 025x102 Yy=ph = 28% 10° +0822 4) A short circuited stub an eighth-wave length long looks like @ shunt inductor of admittance, -j Yo. The purpose of this shunt stub isto tune out most of the susceptance ‘component in the admittance Y;. A tuning section will bbe added to further match the output. A convenient characteristic admittance, Yo = 0.0345 is used for the shunt stub, Yo = 9,98x 103 +} 0422 ~j.0345= 9.35% 10-3 +.0077 2y= Ye = 887 1825 5) The next element is 2 transformer to obtain an admit: tance with real part matched to the 50 ohm load. This is accomplished with an 80 ohm line 1.35 em long. (e=1) (98 = 64.8") Zo 2 +iZ9 tans) 3° [Zo #5 Zz tan BO) Zq= 39.124) 21.1 1 Yar 2 02-0107 66) Anopen stub is chosen to provide some tuning capability. ‘An open circuited stub less than 2 quarter-wave length long looks like a shunt admittance Y = j Yo tan 6. An open circuited stub of characteristic admittance Yo = 039 8 and length 0.4 em (ee = 1) (BE = 19.2") is added, Its suscoptance is 039 tan 19,2° = .0136 2 (02 ~j.0107 +} .0136 = .02 + j.0029 7) Now 2g is matched with a transformer with a character istic impedance of 80 2 and length of .19 em (e, = 1) (R= 9.12") Zo (Za + j Zo tan fe) 75" "(25 +] Zeta 0 Figure 5. Output Matching Network The output tuning section as described has the flexibility for tuning in four areas: © Adjusting the length of the series line ‘© Changing the width or characteristic impedance of the open circuited shunt stub ‘© Modifying the length of the shunt stub © Varying the length of the final series line ‘This completes the design of the output matching network, 2 BIPOLAR TRANSISTORS n2 Figures 6, 7 and 8 show the room temperature performance of the amplifier. Phase Linearity ~ Phase linearity is *5° over the entire 500 MHz band width, Isolation - Isolation is better than -24 dB over the entice 3.7. 10 4.2 GHz band, ‘AM to PM Conversion - With an output power level of - 13. dBm, the input power level is referenced, At this input reference level, the input power is varied £ 10dBm. Over the 3.7 to 4.2 GHz band, the AM to PM conversion is less than 0.13°/0B, Third Order Intercepts ~ With two fundamental signals in jected into the input at 3.95 and 4.06 GHz, the output ower level for each fundamental signal is set at O d3m. ‘The third order intermodulation products are both -34 4B below the two fundamentals at the output, Therefore, the third order intercept point is + 17 dBm. (a Figure 6, Noise and Gain Performance i 3 3 i i Figure 8. Power Output Performance. Spurious Outputs - With 4 GHz, 0 dBm input signal in jected into the amplifier, no spurious signals were detect: ted above -60 dBm over the 2 to 6 GHz band. Group Delay - The group delay over the entire 500 MHz bandwidth is less than .53 n sec, CONSTRUCTION The board material is .031"" RT/Duroid 120-061, with 1 oz copper clad on two sides. The relative dielectric constant (ér) is 2.23. Duroid was chosen because of its ow loss tangent. The thickness of 031” was chosen so the emit: ter top cap could be soldered to the RF ground, thereby taking advantage of the low emitter inductance. ‘To minimize transition interactions between the series trans- mission lines and shunt stubs, the shunt stubs were balanced ‘along the series transmission lines. ‘Some tuning on the output matching network was required. The final realization of this circuit on Duroid is shown in Figure 9. The RF board size is 2 inches by 0.9 inches. ‘A schematic of the complete amplifier and biasing circuit can be seen in Figure 10, Fs = 5 S abs Nesey, | SN Figure 7. Input ~ Output VSWR Performance. Figura 9. RLF, Board Layout,iE Lp ies" Figure 10, Complete Ampifir Schematic, with Bias Cueult Elements Element Value Ry 100 «: Py 200 KE, W, potentiometer Pa 5K2, 1W, potentiometer Ra 261 K2, uN. OV, 100y, aise © (0024, 250¥, dis. % OF, 100, ise. u 2 turns #96 enameled wire on 1” ence (ait) & 2 turns #96 enameled wire on 1" core (air) o hee 375, fy > 180 MHz, BVce0 > 30V, lemax <50MA, Pr <300 mW, PNP Silicon, Piast. A picture of the assembled amplifier can be seen in Figure 11. The amplifier draws 4.4 mA from a 15 volt DC power supply. The quiescent point isadjusted by Ra and Ra. Re is adjusted to provide the proper Voce voltage and Ri is adjusted to supply the correct collector current (Ic}- Figure 11, Amplitir ~ Top View. REFERENCES 1, Hewlett-Packard Application Note 96-1, “S-Parameter “Techniques for faster, more accurate Network Design”, September 1968, Page 12. 2. Hewlett-Packard Application Note 154, “S-Parameter Design”, April 1972, Pages 26 and 27 (CO) BIPOLAR TRANSISTORS 734 NOTESSUPPLEMENTARY READINGS FOR BIPOLAR TRANSISTORS A. Bipolar Transistor Theory 1. Streetman, Solid State Electronic De- vices, Prentice-Hall, Inc. +2. H. F. Cooke, No. 8 pp. 1163-1181, August 1971. +3. E.0. Johnson, “Physical Limitations on Frequency and Power Parameters of Transistors,” RCA Review, vol. 26, No. 2, pp. 163-177, June 1965. +4, N.J. Gri, “Microwave Transistors — From to High Power,” The 14, No. 12, Small Signal Microwave Journal, Vol. pp. 45-50, February 1971. B. Bipolar Transistor Design +5, J.A. Archer, “Design and Performance of Small-Signal_ Microwave Transistors,” Solid State Electronics, Vol. 15 pp. 249- 258, 1972, +6. J.A. Benjamin, “New Design Concepts for Microwave Power Transistors,” The Microwave Journal, Vol. 16, No. 10, pp. 10-14, October 1973, 7. T.H, Hsu and C.P. Snapp, “Low-Noise Microwave Bipolar Transistor with Sub- half-micron Emitter Width," /EEE Trans- action on Electron Devices, June 1978, C. Circuit “Microwave Transistors — ‘Theory and Design," Proc. /EEE, vol. 59, Design 8. Hewlett-Packard Application Note 95-1, “S-Parameter Techniques for Faster, More Accurate Network Design.” 10. Hewlett-Packard Components Applica- tion Note 967, “A Low Noise 4 GHz Transistor Amplifier Using the HXTR- 6101 Silicon Bipolar Transistor.’ 11. Hewlett-Packard Components, Applica~ tion Note 972, “Two Telecommunica- tions Power Amplifiers for 2 and 4 GHz using the HXTR-5102 Silicon Bipolar Power Transistor.” +12, O. Pitzalis, Jr., “Broad-Band Microwave Class-C Transistor Amplifiers,” JEEE Transactions on Microwave Theory and Techniques, MTT-21, No. 11, pp. 660- 668, November 1973, D. Computer Aided Design 13. COMPACT Manual, AMPSYN Manual, Available from Les Besser, Compact Engineering, Inc. 1651 Jolly Court, Los Altos, CA 94022, ‘These papers ara found in a collection of transistor papers in Mierowave Transistors by Or. ED. Graham, Jr, and Or. CW. ‘Guya, Artech House, inc QQ) BiPoLaR TRANSISTORS %76 NOTESSchottky Barrier and High Conductance Diodes pelectiOn Gude oreo ee ea Sate cee ee cee 78 Schottky Barrier Diodes for General Purpose Applications .............55 79 High Conductance Diodes ....-......enrsseeee 84 Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors ............66 87 Schottky Barrier Diode Quads for Double Balanced Mixers ......-.......055 9 Schottky Barrier Diodes for Mixers and Detectors Zero Bias Schottky Detector Diodes Schottky Bamier Diodes for Detectors . Applications for Schottky Diodes .... SCHOTTKY BARRIER DIODES &‘Application Zero Bias General Mixer | Detector Detector Purpose Package Outline P9.No.) | (Pg.No.) | (Pg. No. (Pg. No. — Gs 88 . - = re a ed be 4 96 - - = o “ f i 49 98 110 105 = t i u 16 19 Q 12 - - - 80 T Detailed specifications are given on the pages listed. The primary applications are shownin this guide. Otherapplicationsare discussed in the text. 78HEWLETT (hp PACKARD COMPONENTS SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS 50822301702 03/05 5082-2800(IN5711) 5002 mT 5082-281 5082-2835 5082-2900 HSCH-t001(1N6263) Features LOW TURN-ON VOLTAGE: .34V AT 1mA. PICO-SECOND SWITCHING SPEED HIGH BREAKDOWN VOLTAGE: UP TO 70V UNIFORM FORWARD TRACKING Description Applications ‘The 5082-2800, 2810, 2811 are passivated Schottky bar diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Thay are packaged ina low cost glass package. They are well suited for high level detecting, mixing, switching, gating, log or A-D convert ing, video detecting, frequency discriminating, sampling ‘and wave shaping, ‘The 6082-2835 is a passivated Schottky diode in alow cost {glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for UHF mixing, ‘The 5082-2300 and 2900 Series davices are unpassivated ‘Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers, The HSCH-1001 is a Hybrid Schottky diode sealed in a rugged double stud Outline 12 glass package suitable for automatic insertion. The low turn-on voltage, fast ‘switching speed, and low cost of these diodes make them ideal tor general purpose switching, Application Bulletins 13, 14, 18, and 16 describe applications in which these diodes are used for speed up of a transistor, clipping, clamping, and sampling, respectively, Maximum Ratings at Tcage=25°C lunetion Operating and Storage Temperature Range 5082-2908. 2301, 2302, 2903, 2000 -0°C to 4125°C 5082-2800, 2610, 2811, HSCH-1001 65°C to 4200°C 5082-2895 : 60°C to +150°C Operation ofthese devices within the above temperature ratings will assure a device Mean Time Betaoen Failure (MTBF) of approximately 1 10" hours. DG Power Dissipation (Measured in an infinite heat sink) Derate linearly to zero at maximum rated temperature 15082-2305, 2301, 2302, 2303, 2900 vive 125 mW 5082-2800, 2610, 2811 250 mW Boag anaes ‘i + 150 mW HSCH-1001 400 mw Peak Inverse Voltage cocseteereeeeeseresees VBR Package Dimensions enee—4 oo oe eee sia ai SR she a eos Rrotmonesy SCHOTTKY BARRIER DIODES & © HIGH CONDUCTANCE DIODES ee sem cow |_| 288 ‘OUTLINE 12 (00-35) 79Minimum Maximum | Ve=1V Max ee Part Breakdown Forward | at Forward Heirs ais, Number | Package | Voltage Voltage Current Saree Capac 5082. | Outline | Van (VI Ve mv) fe(ma) [ta (na) at Va V | Cr (oF 20 | 16 70 a0 15 200 2 20 inert | 16 70 410 15 200 Ed 20 mos | ts 30 400 75 300 15 10 Zoi) | 16 a 400 % 300. 18 10. za0atal | 16 EY 400 36 300 8 1.0 2203071 | 15 2 400. 35 500 15 1.0 Er 2 410 3 100 16 12 ins7i2ii [18 20 550 36 160 16 12 2811 18 15 410 2 100 8 12 ineriatn | 15 18 410 20 100 8 12 z00 | 18 10 400 2 100 8 12 2535 |B 340 10" 100) 1 10. fl omar tisoiss © 410, 18 200 50 22 Test i = 10nA a1mA | tVe= av Va nov Conditions ‘ig = 100 ua, f= LOMHz Notes: Matched Pairs and Quads 1. Effective Minority Carron Lifetime (rl fo all these dies it 100 ps maximum measured with Krakaver method at 20 mA except for HSCH-1001 (1NG263I, 1N5711, 1N5712, and 1NS713 which are measured 3 8 mA 2, 5082-2301 » 1N5165, 5082.2302 ~ 1N5106, 5082-2309 = 1NSI67, Basic ‘Matched Part | Matched Matched Ring Qued | Bridge Quad Number Pair | Oud Encaprulated | Encaprulated | Batch 5082. | Unconnected | Unconnected | G-1Outline | G-2Outline | Matched | Test Conditions 2301 | 5082-2300 ‘AVe at -0.75=20 mal Ve = 20 my ‘AGo atf= 1.0 MHz ‘co 0.29F | 2303 | 6082-2308 797” s0g2-23707 | Goa2-2306 21-8 50822356 BY | AV at ie -0.75-20 mA } Ave = 20mV | AVE = 20mV | AVe = 20mV | AVe = 20mv. ACo at 1.0 MHz AGo=0.2pF | ACo=0.2pF | ACo-029F | ACo=0.2pF ‘2900 | soe2-2912348 5082-2070 F |” Soa2-209617-2% G082-2007 17-4 e Vp at le = 1.0-10mA AVE =30mV | AVp = 30mV | AVR = 30mV | AVe = 30mv 2800. | 5082-2804 1-48 so82-2806 24% 082.2806 1-15) ave at » =0.5-5mA Ae = 20mV.| Ave = 20mV ‘Ave =20mV | ACyatf= 1.0 MHz i ‘Co = 0.1 pF. i 2811 “| 5082-2815 3°91] 5082-2814 F421 5082-2813 EL] 5082-2826 }-15| Ave at ie = 10 mA Ve = 20mV | AVp=20mV | AVe=20mV | Ave = 10mV | ACyat f= 1.0 MHz Aco = 0.1 nF 2835 5082.20801-08| “AVp at ip = 10 mA Ave =10 mV | Aco at f= 1.0MHe AC = 011 peCutting 6 Leno LENGTH 18.09.7840 oe Outline 62 2 {¢Pomabo santana sy -Revense canner nt) SCHOTTKY BARRIER DIODES & CB HIGH CONDUCTANCE DIODES |p -ronmano comme a Figure 1. -V Curve Showing Typical Temperature Variation for 5082-2900 Series Scholtay Diodes, i ‘= meveneevoutace Figure 2, 5082-2300 ane 5082-2000 Series Typical Reverse Current vs. Foverse Voltage at Ta = 25°C. Figure 3. -V Curve Showing “Typlest Temperature Variation for 150822800 oF INS711 Senottky never cunning ‘Revenge vorTACE Figure 4, (6082-2800 or 1NS711) ‘Typical Variation of Reverse Current in! ve. Reverse Voltage Val at Various Temperatures | eee 5 i ie | ti) Lee i bie i Le ia ‘y-FoRmARD VOLTAGE Figure 5. 1-V Curve Showing Typical Temperature Variation for the 9082-2810 oF INBT12 Schottky Diode ‘vy REVERSE VOLTAGE Figure 6. (5082-2610 or 1NS712) Typical Variation of Reverse Current th) vs. Reverso Voltage ‘Vai at Various Temperatures ar82 1 —FoRMARO VOLTAGE) = RevenaE vOLTARE 1) p= FORMARO VOLTAGE Figure 7. 1-V Gurve Showing Figure 8. (5082-2811) Typicat Figure @.-V Curve Showing Typical Temperature Variation for Variation of Reverse Current {In} vs. Typical Temperature Variations for 062-2811 Senottky Diode. Reverce Voltage (Va at Various 5082-2835 Senottky Dioge. Temperatures. i a i © 3 § ssl z ; ie ' | ? { 3 ae gut ta SOP gear } i 2 =n iN a" al Sen ge A en wtiecd Pore at eT ee oe eee = Revenee vot A06 vig Reverse vourASe s-AeveREEWoKTAOE Figure 10. 5082-2835) Typical Figure 11. 5082-2000 ana -2900 Figure 12 (5082-2800 or 1NS711) Variation of Reverse Gustent Ini v8 Series Typical Capacitance vs. ‘Typical Capacitance 1G: vs Reverse Voltage Va) at Various Reverse Voltage Reverse Vottage (Vm. Temperatures. ub a i : i i ; i 2 Pp eee Figure 13. Typical Capacitance (C vs: Reverse Vottage Val 15 Forman cunnEN ns Figure 14. Typical Dynamic Rotistance (Ro! ve. Forward Curent ieFORWARD CaN ia) ‘Fonwano voLrace v) Figure 15. Typical Variation of Forward Current (Ie) vs. Forwara Voltage (Vel at Various Temperatures for the HSCH-1003 ie ee ‘caracrance or Figure 17. Typical Capacitance (C) vs. Reverse Voltage Uni for the HSCH-1001 Mechanical Specifications Quttine 45 Lead Material Dumet Lead Finish: 2800 Series: Tin 2300, 2800 Series: Gold Maximum Soldering Temperature: 230°C tor § sec. Minimum Lead Strength: 4 Ib. Pull Typical Package Inductance: 2800 Series: 2.0 nH 2300, 2900 Series: 3.0 nH Typical Package Capacitance: 2800 Series: 0.2 pF 2800, 2900 Series: 0.07 pF The leads on the Outline 15 package should be restricted 0 that the bend starts at least 1/16 inch rom the glass body. i i \ 1 a Ne REVERSE VOLTAGE 1? Figure 16, Typical Variation of Reverse Currant (la) ve. Reverse Voltage (Vai at Various Temperatures for the HSCH-1001 FORWARD CURE oA Figure 18. Typical Dynamic Resistance (Ro! ve. Forward Current ie) at Ta= 25°C for the HSCH-T008 280°C tor 10 sec. 10 1b, Pull 1.8 nH 025 pF SCHOTTKY BARRIER DIODES & ey HIGH CONDUCTANCE DIODESHEWLETT hy PACKARD COMPONENTS | 5082-1001 (1N 4456) HIGH CONDUCTANCE | aims <- DIODES | éteoins Features FAST SWITCHING LOW CAPACITANCE HIGH CURRENT CAPABILITY Description/Applications The 5082-1000 series of diodes feature planar slicon epitaxial construction to provide high conductance, low Capacitance, and nanosecond. turn-on. and. turf Process control of the diode manulacturing enables Speciation of effective minority cari ifetme. Turon time and votage overshoot are minimized in hese diodes Gtlow conductivity modulation “These diodes are ideally suited tor applications such as core drivers, pulse generator, input gates or wherever high conductance without loss of speed is required Maximum Ratings at Toase=25°C WIV — Working Inverse Voltage 1008... 40 Volts 1001/1002 30 Volts 1003/1004 | = 20 Volts iF (Surge) — Forward Current Surge 1.0 Second Duration 0.75 Amp le (Surge) — Forward Current 4.0 Microsecond Duration 7.50 Amp Poiss — Power Dissipation|" 500 mW Ta— Operating Temperature Range -65°C to +175°C Ts1G — Storage Temperature Range -85°C to +200°C Operation of these dovices within the above emperature ratings will assure a device Mean Time Betweon Failure (MTBF) of approximately Tr 107 hours f 248 iol 1. ‘OUTLINE 11 Mechanical Specifications ‘The HP Outline 11 package has a glass hermetic seal with dumet leads, The package will meet MIL-STD-750, Method. 2036, Condition A (2 Ibs. tension for 15 sec.) and E. The maximum soldering temperature is 230°C for § seconds. Outline 11 package capacitance and inductance are typically 0.15 pF and 4 nH respectively. Electrical Specifications at T,=25°C Maximum | Maximum Maximar Minimum | Minimum | Minimum | Reverse | Reverse | Maximum | Reverse | Maximum Pert | Breakdown | Forward | Forwerd | Leakage | Leskage | Total | Recovery | Turn-On Number | Voltage | Current | Current | Current | Current | Capacitance | Time Time 082- Von) | te(ma) | te(ma) | tina) Cor) | trrins) | ton ios) 007 antes 8 150 00 200 200 15 15 25 3002 3 300 200 20 200. 30 20. 28 1008 a 409. 300 200 200 20 15. 201 1004 25 200 500. "200 200 40) 20 20 1008, 0 150 600 200. 200. ua 15, a Test Vp=tov roa | vaRov. Constons | MFtOWa a (3) | sso! | MOL iFiguees) | ‘Figure 10) NOTES: 1. Mounted on a printed oircult board in stil ale 2 Measured at’ ropeliion rate nol to exceed the power dissipation 8. VmeJ8V" for 1006; Va=30V for 100% 1003, 1008 1002; Va=20V for 4. Inductance measured at the edge of the glass package sea ie typically 40.nH forall devices, 5. Rectification EMficiency is typically 65% for all devices FigureFORWARD CUMRENT nA) FoRWARO VOLTAGE) Figure 1. Typical Forward Conduction Characteristics, 15082-1001, 1003, and 1006, FORWARD CURRENT A) Figure 3. Typical Forward Current Temperature Coetticiont. Figure 5, Typical Reverse Current vs. Reverse Voltage a i Figure 2. Typical Forward Conduction Characteristics, {5082-1002 and 1004 - fie gh a I { i. é to 2 a Figure 4. Typical Reverse Current at Specitied Vn ve, Increasing Temperature, os ‘RATED PowER OsPa TOW ATES “rg AMGLENT TEMPERATURE) Figure 6. Power Dissipation Derating Characteristics. 85 ODES. SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE86 REVERSE VOLTAGE WOLTS| Figure 7. Typical Capacitance vs. Reverse Voltage (Characteristics, ec Figure 8, Test Circult for Measuring the Rectilication Efficiency. Signal source is adjusted to 100 MHz and 2V RMS as read fon the 411A. The rectifcation efficiency calculated trom the DC oulput voltage By AE = Voc/2.83 fe typically 65% forall Sevices. Figure 9. Test Circuit for Measuring Reverse Recovery Time. I is set equal to In (anywhere from 10 to 400 mA. tan ‘measured as the time required to recover to 0.1 In as timea trom the 2er0 crossover, The observed wavetorm will BE termined more by diode capacitance than by minority carrer storage. 2 a ae] va ¥ f= ‘oesaoseore| Figuee 10. Test Circuit far Measuring Turn-On Time. ris adjusted for 10 mA after applying the step voltage. ton is measured as tho time required to reach 0.9 Ir from initial application of the step voltage, For high excttaionlovels the ton value is Significant lower than the value speciied, ie, 81 100 mA tows typealy less thar 10 nsHEWLETT, a PACKARD COMPONENTS SCHOTTKY BARRIER | 5082-2200/01/02/03 DIODES FOR STRIPLINE, | 5082-26566, MICROSTRIP MIXERS | S8¢217/is AND DETECTORS | s082-2794/95 5082-2207/08/09/10 Features SMALL SIZE LOW NOISE FIGURE 6 dB Typical at 9 GHz RUGGED DESIGN HIGH UNIFORMITY HIGH BURNOUT RATING 11 W RF Pulse Power Incident BOTH MEDIUM AND LOW BARRIER AVAILABLE Description Applications This family consists of medium barrier and low barrier beam lead diodes mounted in easily handled carrier packages. Low barrier diodes provide optimum noise figure at low local oscillator drive levels. Medium barrier diodes provide a wider dynamic range farlower distortion mixer designs. The family provides a range of both dc and If specified diodes. Application Note 940 gives recom- mended handling and bonding techniques. Application Note 963 presents impedance matching techniques for mixer and detector circuits Package Dimensions SCHOTTKY BARRIER DIODES & © HIGH CONDUCTANCE DIODES Mechanical Specifications The HP outlines C2 and H2.are designed for microstrip, and stripline use. The leads provide good continuity of transmission line impedance to the diode, Outline C2isa plastic on ceramic package. Outline H2 has a metal ceramic hermetic seal. The ceramic is alumina. Metal parts are gold plated kovar. ‘The hermetic package, outline H2, is capable of passing many of the environmental tests of MIL-STD-750, The applicable solderability testis reference 2031.1:260°C, 10, seconds, Hoe ener + em a iy baad ue ou) rovan 08 1 p-———8 oo, : Loe owtine 2 oS oa a Sash ees a r es Ovtine 2 a788 RF Electrical Specifications at T,=25°C | Maximum iF Part Batch Noise | Impedance ‘Typical Number | Matched | Recommended Figure |Z (0) ‘Capacitance 082- | 5082- | Frequency | Barrier | NF(d8) | Mins Max. Cr (we) 7-4 2200 2201 [36-75 Medium] 60 | 200 400 47S 2202 za03 | TTN, [Medlum| 65 | 200 400 3 11-65 2765 | ares PSUTFSHE ow | go | 100 250 WATS 2785, 2786 3204 Low 65 300 250 Tai 2207, | 2208 24.0 ‘Medium| 60 | 250 600 9.8 2209 | 2210 [21.18 Meaium| 65 | 250 500 ie (LM a774 2778 jel? Se Low 60 200 400 s 3.63 2794 2795 ut Low 65 200 400 20:1 Test [ANFS0.3a6] LO. Test Frequency OC Load Fesistance = oft v0 Conditions | azir=250 | 9.375 GHe LO. Power = 1 mW IF = 90 Mi, 1.5.48 NE Typical Detector Parameters Parameter ‘Symbol Typical Value Unite Test Conditions Tangential Sensitivity” 78S

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